JP2005300366A - Inspection device of semiconductor device - Google Patents

Inspection device of semiconductor device Download PDF

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JP2005300366A
JP2005300366A JP2004117541A JP2004117541A JP2005300366A JP 2005300366 A JP2005300366 A JP 2005300366A JP 2004117541 A JP2004117541 A JP 2004117541A JP 2004117541 A JP2004117541 A JP 2004117541A JP 2005300366 A JP2005300366 A JP 2005300366A
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Prior art keywords
contact
electrode
semiconductor device
solder ball
inspection
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Japanese (ja)
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Keisuke Inoue
佳介 井上
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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Priority to JP2004117541A priority Critical patent/JP2005300366A/en
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/04Housings; Supporting members; Arrangements of terminals
    • G01R1/0408Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433Sockets for IC's or transistors
    • G01R1/0441Details
    • G01R1/0466Details concerning contact pieces or mechanical details, e.g. hinges or cams; Shielding
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/04Housings; Supporting members; Arrangements of terminals
    • G01R1/0408Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
    • G01R1/0433Sockets for IC's or transistors
    • G01R1/0483Sockets for un-leaded IC's having matrix type contact fields, e.g. BGA or PGA devices; Sockets for unpackaged, naked chips

Abstract

<P>PROBLEM TO BE SOLVED: To accurately measure to reduce an inductance value even when measuring high frequency characteristics by performing excellent connection with an inspection circuit substrate without eliminating damage to a head top part of a soldering ball electrode in a semiconductor device. <P>SOLUTION: An inspection device of the semiconductor device arranges and forms a plurality of electrode pads 21 by dealing with the soldering ball electrode 7 of the BGA semiconductor device 6 on one face of a substrate 20, and arranges an assembling means 22 on one face of the substrate 20. The inspection device through-forms insertion holes 23 at positions opposed to the electrode pads 21 in the assembling means 22 respectively, and radially forms storing grooves 24 on the circumference. A contact 25 is arranged in each storing groove 24 and is brought into contact with the electrode pads 21 at a position applied on the electrode pads by a part. An elastic body 26 is arranged in contact with the contacts 25 on one end of the storing grooves 24. Excellent contact can be obtained by sliding the contacts 25 on the electrode pads 21 and can be obtained for moving while rubbing the soldering ball electrode 7 and contacts 25. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体装置の電気的特性検査を行う測定装置において、半導体装置と電気的な検査を行う測定装置との間を電気的に接続するための検査装置の構成に係り、特に接続電極に半田ボール電極を備えた半導体装置の検査装置に関するものである。   The present invention relates to a configuration of an inspection device for electrically connecting a semiconductor device and a measurement device for electrical inspection in a measurement device for performing electrical characteristic inspection of a semiconductor device, and particularly to a connection electrode. The present invention relates to an inspection apparatus for a semiconductor device provided with solder ball electrodes.

近年、接続電極にBGA(Ball Grid Array),CSP(Chip Size Package)などの半田ボール電極を有する半導体装置やQFP(Quad Flat Package)などのリード状の電極を有する半導体装置の電気的特性検査を行うには、一般的に、検査装置を利用して半導体装置と測定装置の検査回路基板との間を電気的に接続する。   In recent years, inspection of electrical characteristics of semiconductor devices having solder ball electrodes such as BGA (Ball Grid Array) and CSP (Chip Size Package) and semiconductor devices having lead electrodes such as QFP (Quad Flat Package) as connection electrodes has been conducted. To do this, generally, an inspection device is used to electrically connect the semiconductor device and the inspection circuit board of the measuring device.

その検査装置の1つとして、図6に示すポゴピン(ばね内蔵式接触ピン)方式のコンタクトピンを用いた検査装置がある。図6はポゴピン方式のコンタクトピンを用いた検査装置の形状を示す断面図である。ポゴピン方式コンタクトピン1は、筒体2の内部にコイル状の圧縮ばね3と上部プランジャ4と下部プランジャ5が設けられ、各プランジャの先端は筒体2から外方に伸縮自在に突出している。そして、圧縮ばね3の伸縮によって上部プランジャ4をBGA半導体装置6の半田ボール電極7に押し当てることで半田ボール電極7が上下プランジャおよび筒体2を介して測定装置の検査回路基板8のランド電極9と電気的に接続される。   As one of the inspection apparatuses, there is an inspection apparatus using a pogo pin (spring built-in contact pin) type contact pin shown in FIG. FIG. 6 is a cross-sectional view showing the shape of an inspection apparatus using a pogo pin type contact pin. The pogo pin type contact pin 1 is provided with a coiled compression spring 3, an upper plunger 4 and a lower plunger 5 inside a cylindrical body 2, and the tip of each plunger protrudes from the cylindrical body 2 so as to expand and contract outward. Then, the upper plunger 4 is pressed against the solder ball electrode 7 of the BGA semiconductor device 6 by expansion and contraction of the compression spring 3, so that the solder ball electrode 7 passes through the upper and lower plungers and the cylindrical body 2 and the land electrode of the test circuit board 8 of the measuring device. 9 is electrically connected.

また、検査装置の他構成の1つとして、図7に示す板ばね方式のコンタクトピンを用いた検査装置がある。図7は板ばね方式のコンタクトピンを用いた検査装置の構成を模式的に示す断面図である。板ばね方式コンタクトピン10は測定装置の検査回路基板8の電極パターン11上に半田12等によって固着されており、接触部分13にQFP半導体装置14のリード電極15を押圧接触することにより、板ばね方式コンタクトピン10に形成された湾曲部16の有する弾性により、リード電極15が板ばね方式コンタクトピン10を介して検査装置の検査回路基板8の電極パターン11と電気的に接続される。   As another configuration of the inspection apparatus, there is an inspection apparatus using a leaf spring type contact pin shown in FIG. FIG. 7 is a cross-sectional view schematically showing a configuration of an inspection apparatus using a leaf spring type contact pin. The leaf spring type contact pin 10 is fixed to the electrode pattern 11 of the inspection circuit board 8 of the measuring apparatus by solder 12 or the like, and the leaf spring is brought into contact with the contact portion 13 by pressing the lead electrode 15 of the QFP semiconductor device 14. The lead electrode 15 is electrically connected to the electrode pattern 11 of the inspection circuit board 8 of the inspection apparatus through the leaf spring contact pin 10 due to the elasticity of the curved portion 16 formed on the method contact pin 10.

さらに、検査装置の他構成の1つとして、J字型に形成された板状のコンタクトピンを用いるものがある。図8はJ字型のコンタクトピンを用いた検査装置の構成を模式的に示す断面図である。J字型コンタクトピン17を用いた検査装置はJ字型に形成された板状のコンタクトピンが横向きに配置され弧状の内側の中央部を棒状の電気絶縁性の弾性材料18で押さえてある。J字型コンタクトピン17の先端部分19にQFP半導体装置14のリード電極15を押圧すると、J字型コンタクトピン17の曲率半径が大きくなるように弾性変形するとともに、弾性材料18をこれが圧縮変形するように弾性変形させることで、J字型コンタクトピン17の先端部分19を変位させQFP半導体装置14のリード電極15を擦るように接触することにより、J字型コンタクトピン17を介して検査装置の検査回路基板8の電極パターン11と電気的に接続される。   Further, as another configuration of the inspection apparatus, there is one using a plate-shaped contact pin formed in a J-shape. FIG. 8 is a cross-sectional view schematically showing the configuration of an inspection apparatus using J-shaped contact pins. In the inspection apparatus using the J-shaped contact pin 17, a plate-shaped contact pin formed in a J-shape is disposed sideways, and the arc-shaped inner central portion is pressed by a rod-shaped electrically insulating elastic material 18. When the lead electrode 15 of the QFP semiconductor device 14 is pressed against the tip portion 19 of the J-shaped contact pin 17, the J-shaped contact pin 17 is elastically deformed so that the radius of curvature of the J-shaped contact pin 17 is increased, and the elastic material 18 is compressed and deformed. By elastically deforming in this way, the tip portion 19 of the J-shaped contact pin 17 is displaced and brought into contact with the lead electrode 15 of the QFP semiconductor device 14 so as to rub, thereby allowing the inspection device to pass through the J-shaped contact pin 17. It is electrically connected to the electrode pattern 11 of the inspection circuit board 8.

以上のようにして使用される検査装置には、半導体装置の高速化の進展に伴い、高速化に対応する電気的性能、すなわち低インダクタンス化が要求されている。   The inspection apparatus used as described above is required to have electrical performance corresponding to the high speed, that is, low inductance, with the progress of the high speed of the semiconductor device.

また、接続電極にBGAやCSPなどの半田ボール電極を有する半導体装置を検査する検査装置においては、基板への実装時に半導体装置の半田ボール電極が基板の配線に電気的に正しく接続されるように、半田ボール電極が接触子により損傷しないことも要求されている。
特開2001−208793号公報 特開平10−270140号公報 特開平11−162605号公報
Further, in an inspection apparatus that inspects a semiconductor device having a solder ball electrode such as BGA or CSP as a connection electrode, the solder ball electrode of the semiconductor device is electrically connected to the wiring of the substrate correctly when mounted on the substrate. It is also required that the solder ball electrode is not damaged by the contact.
JP 2001-208793 A Japanese Patent Laid-Open No. 10-270140 Japanese Patent Laid-Open No. 11-162605

しかしながら、前述した構成のコンタクトピンを用いた検査装置を電気的特性検査に使用する場合には、下記のような問題があった。   However, when the inspection apparatus using the contact pin having the above-described configuration is used for the electrical characteristic inspection, there are the following problems.

まず、図6に示すポゴピン方式のコンタクトピンを用いた検査装置では、コンタクトピンを構成する圧縮ばね3と上部プランジャ4と下部プランジャ5の3つの部品の長さの総和によりコンタクトピンの全長が決まり、その全長は比較的長くなるため、コンタクトピンの持つインダクタンス成分が大きくなり、周波数特性が悪くなって高周波特性の検査を正確に行うことが難しいという問題があり、また、接触子の長さをさらに短縮するには物理的な限界がある。   First, in the inspection apparatus using the pogo pin type contact pin shown in FIG. 6, the total length of the contact pin is determined by the total length of the three parts of the compression spring 3, the upper plunger 4 and the lower plunger 5 constituting the contact pin. Because the total length of the contact pin is relatively long, the contact pin has a large inductance component, the frequency characteristic is deteriorated, and it is difficult to accurately inspect the high frequency characteristic. Further shortening has physical limitations.

また、図7に示す板ばね方式のコンタクトピンを用いた検査装置では、QFP半導体装置14のリード電極15との接触部分13から検査装置の検査回路基板8までの距離が長くなるため、コンタクトピンの持つインダクタンス成分が大きくなり、周波数特性が悪くなる。   In the inspection apparatus using the leaf spring type contact pin shown in FIG. 7, the distance from the contact portion 13 of the QFP semiconductor device 14 with the lead electrode 15 to the inspection circuit board 8 of the inspection apparatus becomes long. Increases the inductance component, resulting in poor frequency characteristics.

また、図8に示すJ字型のコンタクトピンを用いた検査装置では、コンタクトピンの先端部分19を変位させQFP半導体装置14のリード電極15を水平方向に擦るようにして接触するので、BGAやCSPなどの接続電極に半田ボール電極7を有する半導体装置の検査に使用する場合、コンタクトピンの先端部分19が半田ボール電極の頭頂部を擦って接触し、半田ボール電極の頭頂部が損傷され半田ボール電極毎に高さ寸法が異なってしまう。   Further, in the inspection apparatus using the J-shaped contact pin shown in FIG. 8, the tip portion 19 of the contact pin is displaced so that the lead electrode 15 of the QFP semiconductor device 14 is rubbed in the horizontal direction. When used for inspection of a semiconductor device having a solder ball electrode 7 on a connection electrode such as a CSP, the tip 19 of the contact pin rubs and contacts the top of the solder ball electrode, and the top of the solder ball electrode is damaged and soldered. The height dimension differs for each ball electrode.

本発明は、前記従来技術の問題を解決することに指向するものであり、比較的簡単な構成により半導体装置の半田ボール電極と検査装置を介して検査回路基板を半田ボール電極の頭頂部への損傷をなくし良好に接続させることができると共に、構成を簡単なものとして高周波特性の測定に際してもインダクタンス値を低減することができ、従って半導体装置の高周波特性を正確に測定することと半導体装置の半田ボール電極の接触子による損傷を防止することができる半導体装置の検査装置を提供することを目的とする。   The present invention is directed to solving the problems of the prior art, and with a relatively simple configuration, the test circuit board is placed on the top of the solder ball electrode via the solder ball electrode of the semiconductor device and the test device. In addition to being able to eliminate damage and make a good connection, it is possible to reduce the inductance value even when measuring the high frequency characteristics by simplifying the configuration, so that it is possible to accurately measure the high frequency characteristics of the semiconductor device and solder the semiconductor device It is an object of the present invention to provide a semiconductor device inspection apparatus capable of preventing damage to a ball electrode due to a contact.

この目的を達成するために、本発明に係る半導体装置の検査装置は、半導体測定装置の検査回路基板と半導体装置の半田ボール電極とを電気的導通を生じるように接続する半導体装置の検査装置であって、半導体装置の半田ボール電極の配列と対応して複数の電極パッドが配列形成された基板と、基板上に配置した電極パッドとそれぞれ対向する位置に半田ボール電極を挿入できる挿通孔と、挿通孔の外周に収容溝を形成した電気絶縁性の組み付け手段と、収容溝に可動自在に配置して電極パッドと接する接触子と、接触子に対応して配置した弾性材料からなる弾性体部とを備え、接触子を介して半田ボール電極と電極パッドとを導通する構成であり、接触子を基板に対して平行かつ摺動自在に配置したことを特徴とする。   To achieve this object, an inspection apparatus for a semiconductor device according to the present invention is an inspection apparatus for a semiconductor device that connects an inspection circuit board of a semiconductor measurement device and a solder ball electrode of the semiconductor device so as to cause electrical continuity. A substrate on which a plurality of electrode pads are arranged corresponding to the arrangement of the solder ball electrodes of the semiconductor device, and an insertion hole into which the solder ball electrodes can be inserted at positions facing the electrode pads arranged on the substrate, Electrically insulating assembly means in which a housing groove is formed on the outer periphery of the insertion hole, a contact that is movably disposed in the housing groove and is in contact with the electrode pad, and an elastic body made of an elastic material corresponding to the contact The solder ball electrode and the electrode pad are electrically connected through the contact, and the contact is arranged in parallel and slidable with respect to the substrate.

さらに、半田ボール電極の1つに対して、複数の接触子を検査装置の挿通孔外周に放射状に配置したことを特徴とする。   Furthermore, a plurality of contacts are arranged radially on the outer periphery of the insertion hole of the inspection device for one of the solder ball electrodes.

前記構成によれば、接触子を基板に対して平行に摺動させる構成のため接触子の高さを低くすることができ、半導体装置の高周波特性を正確に測定できるとともに、弾性体部の変形による押圧力で半導体装置の半田ボール電極とを良好に接続させることができ、また、接触子が半田ボール電極の頭頂部に接触しない構成であることから頭頂部の損傷を防止でき、さらに、接触子と半導体装置の半田ボール電極との接触面積が増えるために接触が安定して検査をさらに正確に行うことができる。   According to the above configuration, the height of the contact can be reduced due to the configuration in which the contact is slid in parallel with the substrate, the high frequency characteristics of the semiconductor device can be accurately measured, and the elastic body portion can be deformed. The solder ball electrode of the semiconductor device can be satisfactorily connected with the pressing force due to the contact, and since the contact does not contact the top of the solder ball electrode, damage to the top of the head can be prevented. Since the contact area between the child and the solder ball electrode of the semiconductor device increases, the contact can be stabilized and the inspection can be performed more accurately.

以上説明したように、本発明によれば、比較的簡単な構成で半導体装置の半田ボール電極と検査装置の検査回路基板との間を半田ボール電極の頭頂部への損傷をなくし良好に接続させることができると共に、高周波特性の測定に際してもインダクタンス値を低減でき、半導体装置の高周波特性を正確に測定することができるという効果を奏する。   As described above, according to the present invention, the solder ball electrode of the semiconductor device and the inspection circuit board of the inspection device can be connected with a relatively simple configuration without damaging the top of the solder ball electrode. In addition, the inductance value can be reduced when measuring the high frequency characteristics, and the high frequency characteristics of the semiconductor device can be accurately measured.

以下、図面を参照して本発明における実施の形態を詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図1は本発明の実施の形態1における検査装置の要部を示す(a)は断面図、(b)は上面図である。ここで、前記従来例を示す図6において説明した構成部材に対応し同等の機能を有するものには同一の符号を付してこれを示す。   FIG. 1A is a cross-sectional view and FIG. 1B is a top view showing the main part of an inspection apparatus according to Embodiment 1 of the present invention. Here, components having the same functions corresponding to the components described in FIG. 6 showing the conventional example are denoted by the same reference numerals.

図1に示すように、本実施の形態1においては、基板20の一面にBGA半導体装置6の半田ボール電極7と対応した複数の電極パッド21が配列形成され、その基板20の一面上に組み付け手段22が配置される。組み付け手段22には基板20の例えば金メッキされた電極パッド21と対向する位置にそれぞれ挿通孔23が貫通形成されており、その円周上には放射状に収容溝24が形成されている。   As shown in FIG. 1, in the first embodiment, a plurality of electrode pads 21 corresponding to the solder ball electrodes 7 of the BGA semiconductor device 6 are arrayed on one surface of the substrate 20 and assembled on one surface of the substrate 20. A means 22 is arranged. In the assembling means 22, through holes 23 are formed penetratingly at positions facing the gold-plated electrode pads 21 of the substrate 20, and receiving grooves 24 are formed radially on the circumference thereof.

各収容溝24には図1(a)に示したようにそれぞれ接触子25が配され、これら接触子25はそれぞれ一部が電極パッド21上にかかるように位置されて電極パッド21と接している。また、収容溝24の挿通孔23から離れた一端には弾性体部26が接触子25に接するように配置される。なお、この例では図1(b)に示したように接触子25はそれぞれ1個ずつ挿通孔23に配置される。   As shown in FIG. 1A, contacts 25 are arranged in the respective housing grooves 24, and these contacts 25 are positioned so as to partially cover the electrode pads 21 and are in contact with the electrode pads 21. Yes. Further, an elastic body portion 26 is disposed at one end of the housing groove 24 away from the insertion hole 23 so as to contact the contact 25. In this example, as shown in FIG. 1B, one contact 25 is arranged in each insertion hole 23.

接触子25は材料として例えば銅や銅合金が用いられる。その表面には、まずニッケルメッキが施され、それを覆うように金メッキが施されている。また、弾性体部26の形状は球体や円筒状で、その材料としてシリコンゴムなどが用いられる。   For example, copper or a copper alloy is used for the contact 25. The surface is first nickel-plated and then gold-plated to cover it. The elastic body portion 26 has a spherical or cylindrical shape, and silicon rubber or the like is used as the material thereof.

図2は前述した接点構成を有する検査装置27の全体の概略構成を示した斜視図である。接触子を収容保持した組み付け手段22はネジ29により基板20と固定される。基板20は多層プリント配線板よりなり、組み付け手段22の各挿通孔23の下に位置する電極パッド21からそれぞれ配線パターン(図示せず)を介して導出された端子電極28が方形状をなす基板20の各辺に沿って配列形成されている。   FIG. 2 is a perspective view showing an overall schematic configuration of the inspection apparatus 27 having the above-described contact configuration. The assembly means 22 that accommodates and holds the contact is fixed to the substrate 20 by screws 29. The substrate 20 is formed of a multilayer printed wiring board, and the terminal electrodes 28 led out from the electrode pads 21 located under the respective insertion holes 23 of the assembling means 22 via the wiring patterns (not shown) form a square shape. An array is formed along each of the 20 sides.

次に、このような構成を有する検査装置27に対して、BGA半導体装置6が装填され、半田ボール電極7が電気的に接続される様子を、図3を参照して説明する。   Next, a state in which the BGA semiconductor device 6 is loaded and the solder ball electrode 7 is electrically connected to the inspection device 27 having such a configuration will be described with reference to FIG.

検査装置27上に位置決めされたBGA半導体装置6が降下されると各半田ボール電極7は図3(a)のように挿通孔23に入り込み、さらにBGA半導体装置6が上から押圧されると、半田ボール電極7と接触している接触子25は電極パッド21上を滑りながら収容溝24内を周縁方向へ移動し、半田ボール電極7の押圧力によって図3(b)のように弾性体部26に押し付けられた状態となり、半田ボール電極7の最大直径部30付近と挿通孔23内の接触子25の傾斜部31とが接触する。そのとき、半田ボール電極7と接触子25の接触点は、接触子25の傾斜部31の上方から下方へ移動する。また弾性体部26に押し付けられた接触子25は、弾性体部26からその反力による弾性力を受けることにより半田ボール電極7と良好な接触圧を持って接触する。   When the BGA semiconductor device 6 positioned on the inspection device 27 is lowered, each solder ball electrode 7 enters the insertion hole 23 as shown in FIG. 3A, and when the BGA semiconductor device 6 is further pressed from above, The contact 25 in contact with the solder ball electrode 7 moves in the accommodation groove 24 in the peripheral direction while sliding on the electrode pad 21, and the elastic body portion is pressed by the pressing force of the solder ball electrode 7 as shown in FIG. 26, the vicinity of the maximum diameter portion 30 of the solder ball electrode 7 comes into contact with the inclined portion 31 of the contact 25 in the insertion hole 23. At that time, the contact point between the solder ball electrode 7 and the contact 25 moves downward from above the inclined portion 31 of the contact 25. Further, the contact 25 pressed against the elastic body portion 26 receives the elastic force due to the reaction force from the elastic body portion 26 and thereby contacts the solder ball electrode 7 with a good contact pressure.

このように、接触子25が電極パッド21上を滑ることにより、電極パッド21の表面を擦るため、接触子25と電極パッド21間の良好な接触を得ることができる。また、半田ボール電極7と接触子25が接触する際、接触子25側の接触点も擦れながら移動するために、半田ボール電極7と接触子25間の良好な接触を得ることができる。さらに、接触子25は半田ボール電極7との接触の際、半田ボール電極7の頭頂部32には触れないので頭頂部32への損傷はない。   Thus, since the contact 25 slides on the electrode pad 21, the surface of the electrode pad 21 is rubbed, so that a good contact between the contact 25 and the electrode pad 21 can be obtained. Further, when the solder ball electrode 7 and the contactor 25 come into contact with each other, the contact point on the contactor 25 side also moves while rubbing, so that a good contact between the solder ball electrode 7 and the contactor 25 can be obtained. Furthermore, since the contact 25 does not touch the top 32 of the solder ball electrode 7 when contacting the solder ball electrode 7, there is no damage to the top 32.

なお、本実施の形態1では図3に示すように挿通孔23の上面の縁は鋭角になっているが、縁を面取り加工することも可能であり、半導体装置の装填時における半田ボール電極7への損傷を防ぐことができる。また、前述したように半田ボール電極7と電極パッド21とを電気的に接続する接触子25は極めて小さいものであり、半田ボール電極7と接触子25の接点と、接触子25と電極パッド21の接点との距離、すなわち電気的線路長を短くできるため、インダクタンスを非常に小さくすることができる。   In the first embodiment, as shown in FIG. 3, the edge of the upper surface of the insertion hole 23 has an acute angle. However, the edge can be chamfered, and the solder ball electrode 7 when the semiconductor device is loaded. Can prevent damage. Further, as described above, the contact 25 for electrically connecting the solder ball electrode 7 and the electrode pad 21 is extremely small. The contact between the solder ball electrode 7 and the contact 25, the contact 25, and the electrode pad 21. Since the distance from the contact point, that is, the electrical line length can be shortened, the inductance can be made very small.

図4は本発明の実施の形態2における検査装置の要部を示す(a)は断面図、(b)は上面図であり、図5は本実施の形態2における検査装置の全体の概略構成を示した斜視図である。   4A and 4B show a main part of the inspection apparatus according to the second embodiment of the present invention, in which FIG. 4A is a cross-sectional view, FIG. 4B is a top view, and FIG. It is the perspective view which showed.

前述の実施の形態1に示した例では各挿通孔23には1個の接触子25が配置されており、1点の接触構成により半田ボール電極7との接触が得られるものとなっているが、挿通孔23に配置する接触子25の数や配置はこれに限るものではなく、図4に示すように、本実施の形態2の挿通孔23’は、半田ボール電極7に対向して、2個配置することで、極めて安定した接触状態が得ることができる。また、接触子25は挿通孔23’を中心として放射状に3個以上配しても良い。   In the example shown in the first embodiment, one contact 25 is arranged in each insertion hole 23, and contact with the solder ball electrode 7 can be obtained by a one-point contact configuration. However, the number and arrangement of the contacts 25 arranged in the insertion hole 23 are not limited to this, and the insertion hole 23 ′ of the second embodiment is opposed to the solder ball electrode 7 as shown in FIG. 4. By arranging two, a very stable contact state can be obtained. Further, three or more contacts 25 may be arranged radially around the insertion hole 23 '.

本発明に係る検査装置は、半田ボール電極を有する半導体装置の高周波特性を正確に測定でき、また半田ボール電極を損傷することなく測定することができ、半導体装置の検査装置として有用である。   INDUSTRIAL APPLICABILITY The inspection apparatus according to the present invention can accurately measure the high frequency characteristics of a semiconductor device having solder ball electrodes, and can measure without damaging the solder ball electrodes, and is useful as an inspection apparatus for semiconductor devices.

本発明の実施の形態1における検査装置の要部を示す(a)は断面図、(b)は上面図(A) which shows the principal part of the inspection apparatus in Embodiment 1 of this invention is sectional drawing, (b) is a top view 本実施の形態1における検査装置の全体構成を示す斜視図The perspective view which shows the whole structure of the test | inspection apparatus in this Embodiment 1. 本実施の形態1における検査装置に対して、BGA半導体装置が装填されて半田ボール電極が電気的に接続される様子(a),(b)を説明する図The figure explaining a mode (a), (b) with which a BGA semiconductor device is loaded with respect to the inspection apparatus in this Embodiment 1, and a solder ball electrode is electrically connected. 本発明の実施の形態2における検査装置の要部を示す(a)は断面図、(b)は上面図(A) which shows the principal part of the inspection apparatus in Embodiment 2 of this invention is sectional drawing, (b) is a top view. 本実施の形態2における検査装置の全体構成を示す斜視図The perspective view which shows the whole structure of the test | inspection apparatus in this Embodiment 2. 従来のポゴピン方式のコンタクトピンを用いた検査装置を示すの断面図Sectional view of a conventional pogo pin type contact pin using an inspection device 従来の板ばね方式のコンタクトピンを用いた検査装置を示す断面図Sectional view showing a conventional inspection device using a leaf spring contact pin 従来のJ字型のコンタクトピンを用いた検査装置を示す断面図Sectional drawing which shows the inspection apparatus using the conventional J-shaped contact pin

符号の説明Explanation of symbols

1 ポゴピン方式コンタクトピン
2 筒体
3 圧縮ばね
4 上部プランジャ
5 下部プランジャ
6 BGA半導体装置
7 半田ボール電極
8 検査回路基板
9 ランド電極
10 板ばね方式コンタクトピン
11 電極パターン
12 半田
13 接触部分
14 QFP半導体装置
15 リード電極
16 湾曲部
17 J字型コンタクトピン
18 弾性材料
19 先端部分
20 基板
21 電極パッド
22 組み付け手段
23,23’ 挿通孔
24 収容溝
25 接触子
26 弾性体部
27 検査装置
28 端子電極
29 ネジ
30 最大直径部
31 傾斜部
32 頭頂部
DESCRIPTION OF SYMBOLS 1 Pogo pin system contact pin 2 Cylinder 3 Compression spring 4 Upper plunger 5 Lower plunger 6 BGA semiconductor device 7 Solder ball electrode 8 Inspection circuit board 9 Land electrode 10 Leaf spring system contact pin 11 Electrode pattern 12 Solder 13 Contact part 14 QFP semiconductor device 15 Lead electrode 16 Curved portion 17 J-shaped contact pin 18 Elastic material 19 Tip portion 20 Substrate 21 Electrode pad 22 Assembly means 23, 23 ′ Insertion hole 24 Housing groove 25 Contact 26 Elastic body portion 27 Inspection device 28 Terminal electrode 29 Screw 30 Maximum diameter part 31 Inclined part 32 Head part

Claims (2)

半導体測定装置の検査回路基板と半導体装置の半田ボール電極とを電気的導通を生じるように接続する半導体装置の検査装置であって、
前記半導体装置の半田ボール電極の配列と対応して複数の電極パッドを配列形成した基板と、前記基板上に配置した前記電極パッドとそれぞれ対向する位置に前記半田ボール電極を挿入できる挿通孔と、前記挿通孔の外周に収容溝を形成した電気絶縁性の組み付け手段と、前記収容溝に可動自在に配置して前記電極パッドと接する接触子と、前記接触子に対応して配置した弾性材料からなる弾性体部とを備え、
前記接触子を介して前記半田ボール電極と前記電極パッドとを導通する構成であり、前記接触子を前記基板に対して平行かつ摺動自在に配置したことを特徴とする半導体装置の検査装置。
A semiconductor device inspection device for connecting an inspection circuit board of a semiconductor measuring device and a solder ball electrode of a semiconductor device so as to cause electrical conduction,
A substrate on which a plurality of electrode pads are arranged corresponding to the arrangement of the solder ball electrodes of the semiconductor device, and an insertion hole into which the solder ball electrodes can be inserted at positions facing the electrode pads arranged on the substrate, An electrically insulating assembly means in which a housing groove is formed on the outer periphery of the insertion hole; a contactor movably disposed in the housing groove and in contact with the electrode pad; and an elastic material disposed in correspondence with the contactor An elastic body part
An inspection apparatus for a semiconductor device, wherein the solder ball electrode and the electrode pad are electrically connected to each other through the contact, and the contact is arranged parallel to and slidable with respect to the substrate.
前記半田ボール電極の1つに対して、複数の接触子を検査装置の挿通孔外周に放射状に配置したことを特徴とする請求項1記載の半導体装置の検査装置。   2. The inspection apparatus for a semiconductor device according to claim 1, wherein a plurality of contacts are arranged radially around an insertion hole of the inspection apparatus for one of the solder ball electrodes.
JP2004117541A 2004-04-13 2004-04-13 Inspection device of semiconductor device Pending JP2005300366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004117541A JP2005300366A (en) 2004-04-13 2004-04-13 Inspection device of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004117541A JP2005300366A (en) 2004-04-13 2004-04-13 Inspection device of semiconductor device

Publications (1)

Publication Number Publication Date
JP2005300366A true JP2005300366A (en) 2005-10-27

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Country Link
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468398A (en) * 2010-11-09 2012-05-23 展晶科技(深圳)有限公司 LED (Light Emitting Diode) packaging structure
CN105914271A (en) * 2011-07-25 2016-08-31 晶元光电股份有限公司 Light-emitting diode element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468398A (en) * 2010-11-09 2012-05-23 展晶科技(深圳)有限公司 LED (Light Emitting Diode) packaging structure
CN102468398B (en) * 2010-11-09 2014-10-15 展晶科技(深圳)有限公司 LED (Light Emitting Diode) packaging structure
CN105914271A (en) * 2011-07-25 2016-08-31 晶元光电股份有限公司 Light-emitting diode element

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