JP2005277323A5 - - Google Patents
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- JP2005277323A5 JP2005277323A5 JP2004092093A JP2004092093A JP2005277323A5 JP 2005277323 A5 JP2005277323 A5 JP 2005277323A5 JP 2004092093 A JP2004092093 A JP 2004092093A JP 2004092093 A JP2004092093 A JP 2004092093A JP 2005277323 A5 JP2005277323 A5 JP 2005277323A5
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004092093A JP4628004B2 (ja) | 2004-03-26 | 2004-03-26 | 薄膜トランジスタの作製方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004092093A JP4628004B2 (ja) | 2004-03-26 | 2004-03-26 | 薄膜トランジスタの作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005277323A JP2005277323A (ja) | 2005-10-06 |
JP2005277323A5 true JP2005277323A5 (zh) | 2007-05-17 |
JP4628004B2 JP4628004B2 (ja) | 2011-02-09 |
Family
ID=35176615
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004092093A Expired - Fee Related JP4628004B2 (ja) | 2004-03-26 | 2004-03-26 | 薄膜トランジスタの作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4628004B2 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI460851B (zh) * | 2005-10-17 | 2014-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP2007220360A (ja) * | 2006-02-14 | 2007-08-30 | Tokyo Electron Ltd | 発光素子、発光素子の製造方法および基板処理装置 |
JP5371144B2 (ja) * | 2007-06-29 | 2013-12-18 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法、並びに電子機器 |
TWI500159B (zh) | 2008-07-31 | 2015-09-11 | Semiconductor Energy Lab | 半導體裝置和其製造方法 |
US8106400B2 (en) * | 2008-10-24 | 2012-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR101432764B1 (ko) * | 2008-11-13 | 2014-08-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치의 제조방법 |
KR102163686B1 (ko) | 2008-11-21 | 2020-10-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101752640B1 (ko) | 2009-03-27 | 2017-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
KR102221207B1 (ko) | 2009-09-04 | 2021-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
KR102142835B1 (ko) * | 2009-10-09 | 2020-08-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101772639B1 (ko) | 2009-10-16 | 2017-08-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
EP2497115A4 (en) | 2009-11-06 | 2015-09-02 | Semiconductor Energy Lab | SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
JP5683125B2 (ja) * | 2010-03-24 | 2015-03-11 | 莉立 范 | 電極の敷設方法とその構造 |
CN103762167A (zh) * | 2011-12-31 | 2014-04-30 | 广东中显科技有限公司 | 一种搭桥晶粒多晶硅薄膜晶体管及其制造方法 |
JP6536634B2 (ja) * | 2017-07-28 | 2019-07-03 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100206877B1 (ko) * | 1995-12-28 | 1999-07-01 | 구본준 | 박막트랜지스터 제조방법 |
JP2003249658A (ja) * | 2002-02-26 | 2003-09-05 | Seiko Epson Corp | 有機半導体装置 |
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2004
- 2004-03-26 JP JP2004092093A patent/JP4628004B2/ja not_active Expired - Fee Related
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