JP2005259918A - Power converter - Google Patents
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- JP2005259918A JP2005259918A JP2004068305A JP2004068305A JP2005259918A JP 2005259918 A JP2005259918 A JP 2005259918A JP 2004068305 A JP2004068305 A JP 2004068305A JP 2004068305 A JP2004068305 A JP 2004068305A JP 2005259918 A JP2005259918 A JP 2005259918A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Abstract
Description
電力用半導体素子を用いた電力変換装置に関する。 The present invention relates to a power conversion device using a power semiconductor element.
ＭＯＳＦＥＴ，ＩＧＢＴなどの電力用半導体素子を用いた電力変換装置は、両面に金属導体を積層した絶縁基板の第１の金属導体に電力用半導体素子を、高融点はんだを介して接合し、第２の金属導体に放熱板を低融点はんだを介して接合している。 In a power conversion apparatus using power semiconductor elements such as MOSFET and IGBT, a power semiconductor element is joined to a first metal conductor of an insulating substrate in which metal conductors are laminated on both sides via a high melting point solder. A heat sink is joined to the metal conductor via a low melting point solder.
電力変換装置は、稼動に伴う温度サイクルによって、電力用半導体素子と放熱板との熱膨張係数の差から応力が生じ、高融点はんだや低融点はんだにクラックが進展し、信頼性が低下する。 In the power conversion device, stress is generated due to a difference in thermal expansion coefficient between the power semiconductor element and the heat radiating plate due to a temperature cycle accompanying operation, cracks develop in the high melting point solder and the low melting point solder, and the reliability decreases.
このはんだに進展するクラックを抑制する目的で、放熱板に低熱膨張性の材料を用いる技術は多数開示されている。 Many techniques using a low thermal expansion material for the heat sink have been disclosed for the purpose of suppressing cracks that develop in the solder.
低熱膨張性の材料は、無酸素銅，アルミなどの材料と比較して、価格が高く、熱伝導率が低いため、電力用変換装置の低コスト化を妨げたり、より高い冷却性能が必要な電力変換装置には適用できないという課題があった。 Low thermal expansion materials are expensive and have low thermal conductivity compared to materials such as oxygen-free copper and aluminum, which hinders cost reduction of power converters and requires higher cooling performance. There was a problem that it could not be applied to a power converter.
高融点はんだは、一般的に鉛を９０重量％以上含有する鉛入りはんだであり、低融点はんだは、鉛を５０重量％前後含有する鉛入りはんだである。 The high melting point solder is generally a lead-containing solder containing 90% by weight or more of lead, and the low melting point solder is a lead-containing solder containing about 50% by weight of lead.
近年、環境への配慮から、鉛，カドミウムなどの汚染物質を含まないことが望まれ、様々な業界で使用量の規制の対象とされるようになった。 In recent years, it has been desired not to contain pollutants such as lead and cadmium in consideration of the environment, and it has become subject to usage restrictions in various industries.
本発明は、外部導出端子に電力用半導体素子をはんだ付けした電力変換装置であって、９０重量％以上のすずからなり、かつ実質的に鉛を含まないことを最も主要な特徴とする。 The present invention is a power conversion device in which a power semiconductor element is soldered to an external lead-out terminal, and is characterized in that it is composed of 90% by weight or more of tin and substantially does not contain lead.
また、本発明は、電力用半導体素子の少なくとも１辺の長さが７mm以下であることを特徴とする。 Further, the present invention is characterized in that the length of at least one side of the power semiconductor element is 7 mm or less.
本発明の電力変換装置は、外部導出端子に電力用半導体素子を直接はんだ付けすることで、はんだを１種類とし、はんだの材料費及びはんだ付け工数が節減できる。 In the power conversion device of the present invention, by soldering the power semiconductor element directly to the external lead-out terminal, one type of solder can be used, and the material cost of solder and the number of soldering steps can be reduced.
本発明で用いるはんだは、９０重量％以上のすずからなる、かつ実質的に鉛を含まないはんだ（以下、鉛フリーはんだという）であり、鉛入りはんだと比較して、ヤング率，降伏応力などが高いため、クラックの進展する速度が遅く、信頼性が高い。 The solder used in the present invention is a solder composed of 90% by weight or more of tin and substantially free of lead (hereinafter referred to as lead-free solder), and has a Young's modulus, yield stress, etc., as compared with lead-containing solder. Therefore, the speed at which cracks progress is slow and the reliability is high.
また、電力用半導体素子の少なくとも１辺の長さが７mm以下とすることで、温度サイクルによって生じる応力自体を小さくすることができるため、より信頼性が高い。 Further, when the length of at least one side of the power semiconductor element is 7 mm or less, the stress itself caused by the temperature cycle can be reduced, and thus the reliability is higher.
本発明の電力変換装置の特徴を、図１を用いて説明する。なお、図１は、本発明の特徴を分かりやすく説明するために、電力変換装置のパワーモジュール部を示し、制御回路を構成する制御端子及び制御基板を省略した概略図である。 The features of the power conversion device of the present invention will be described with reference to FIG. FIG. 1 is a schematic diagram illustrating a power module unit of a power conversion apparatus and omitting a control terminal and a control board constituting a control circuit in order to easily understand the features of the present invention.
本発明の電力変換装置のパワーモジュール１は、電力用半導体素子２と外部導出端子３とを、鉛フリーはんだ４を介して直接はんだ付けする。
The power module 1 of the power conversion apparatus of the present invention directly solders the
外部導出端子は、電気良導性金属が好まれ、コストの観点から銅，アルミなどの金属が好適である。 The external lead-out terminal is preferably an electrically conductive metal, and is preferably a metal such as copper or aluminum from the viewpoint of cost.
例えば、ＣｕやＡｌからなるバスバーなどである。 For example, a bus bar made of Cu or Al.
鉛フリーはんだは、すずを９０重量％以上含有することが重要で、残部に銅，銀，ビスマス，アンチモン，亜鉛から少なくともひとつ以上の金属を含有してもよい。 It is important that lead-free solder contains 90% by weight or more of tin, and the balance may contain at least one metal from copper, silver, bismuth, antimony, and zinc.
なお、外部導出端子と放熱板５の外部露出面６との電気的な絶縁を確保するために、外部導出端子と放熱板との間に絶縁シートを挟んだり、外部導出端子または放熱板に絶縁層７を形成したりするとよい。
In order to ensure electrical insulation between the external lead-out terminal and the externally exposed
本実施例は、図２に示す主回路構成となる上下一対の電力用半導体素子を持つパワーモジュールを３つ製作し、３相を逆変換する電力変換装置を製作した。 In this example, three power modules having a pair of upper and lower power semiconductor elements having the main circuit configuration shown in FIG. 2 were manufactured, and a power converter that reversely converted three phases was manufactured.
なお、本実施例では、電力用半導体素子として７.７mm×７.７mmのＭＯＳＦＥＴチップを用い、鉛フリーはんだとして銀が３重量％、銅が０.５重量％ 、残部がすずからなるはんだペーストを用いた。 In this embodiment, a 7.7 mm × 7.7 mm MOSFET chip is used as the power semiconductor element, and the lead-free solder is 3% by weight of silver, 0.5% by weight of copper, and the balance is tin. Was used.
まず、電気ニッケルめっきを施した無酸素銅からなる外部導出端子の電力用半導体素子を実装する部分の周囲に幅約１mmのソルダーレジスト層を形成した。 First, a solder resist layer having a width of about 1 mm was formed around the portion where the power semiconductor element of the external lead-out terminal made of oxygen-free copper plated with nickel was mounted.
次に、外部導出端子と制御端子とをインサート成形した樹脂製ケースを製作し、厚さ約０.３mm の鉛フリーはんだを外部導出端子の電力半導体素子を実装する部分に形成した。 Next, a resin case in which the external lead-out terminal and the control terminal were insert-molded was manufactured, and lead-free solder having a thickness of about 0.3 mm was formed on the portion where the power semiconductor element of the external lead-out terminal was mounted.
続いて、電力用半導体素子のドレイン電極面を下にしてはんだペーストの上に載せ、窒素雰囲気赤外線リフロー装置を用いてはんだ付けした。 Subsequently, the drain electrode surface of the power semiconductor element was placed on the solder paste and soldered using a nitrogen atmosphere infrared reflow apparatus.
さらに、電気ニッケルめっきを施した厚さ約３mmの無酸素銅からなる放熱板と樹脂製ケースとの間に厚さ０.５mm の絶縁シートを挿入し、ネジ止めした。 Furthermore, an insulating sheet having a thickness of 0.5 mm was inserted between a heat sink made of oxygen-free copper having a thickness of about 3 mm and plated with resin and a resin case, and screwed.
次に、電力用半導体素子のゲートパッドと制御端子とを直径２００μｍのアルミワイヤで超音波ボンディングし、電力用半導体素子のソース面と対アームの外部導出端子とを直径５００μｍのアルミワイヤを超音波ボンディングしてパワーモジュールを製作した。 Next, the gate pad and the control terminal of the power semiconductor element are ultrasonically bonded with an aluminum wire having a diameter of 200 μm, and the source surface of the power semiconductor element and the external lead-out terminal of the opposite arm are ultrasonically bonded with an aluminum wire having a diameter of 500 μm. A power module was made by bonding.
最後に、製作した３つのパワーモジュールの制御端子と制御基板とをはんだ付けして、電力変換装置を製作した。 Finally, the power conversion device was manufactured by soldering the control terminals and control boards of the three power modules manufactured.
本実施例は、電力用半導体素子を６.５mm×６.５mmのＭＯＳＦＥＴに替えて、実施例１と同様に電力変換装置を製作した。 In this example, a power conversion device was manufactured in the same manner as in Example 1 by replacing the power semiconductor element with a 6.5 mm × 6.5 mm MOSFET.
本比較例は、鉛フリーはんだをすずが６３重量％、残部が鉛からなる共晶鉛入りはんだに替えて、実施例１と同様に電力変換装置を製作した。
〔評価〕
実施例１，実施例２及び比較例で製作した電力変換装置のパワーモジュールについて、温度サイクル試験を実施した。温度サイクル試験の条件は、低温側−３０℃，高温側125℃を各３０分のサイクルとして、初期、１００，２００サイクル、以降２００サイクル毎３０００サイクルまで熱抵抗を測定した。
In this comparative example, a power converter was manufactured in the same manner as in Example 1 by replacing lead-free solder with eutectic lead-containing solder consisting of 63% by weight of tin and the balance being lead.
[Evaluation]
The temperature cycle test was implemented about the power module of the power converter device manufactured in Example 1, Example 2, and the comparative example. The conditions of the temperature cycle test were the initial, 100,200 cycles, and the subsequent 200 cycles up to 3000 cycles, with the low temperature side of −30 ° C. and the high temperature side of 125 ° C. for 30 minutes each.
温度サイクル試験のサイクル数を横軸に、熱抵抗の初期値に対する変化率と縦軸として図２に示す。 FIG. 2 shows the number of cycles of the temperature cycle test on the horizontal axis, the rate of change of the thermal resistance with respect to the initial value, and the vertical axis.
変化率が１０％以上になったサイクルを比較すると、比較例は、１２００サイクルであったの対して、実施例１は、２２００サイクルと長く、実施例２は、更に長い２８００サイクルであった。 Comparing the cycles in which the rate of change became 10% or more, the comparative example was 1200 cycles, while the example 1 was as long as 2200 cycles, and the example 2 was 2800 cycles longer.
本発明による電力変換装置は、信頼性が高く、環境に対しても負荷が少なく、工業製品特に環境対応の製品への適用が可能である。 The power conversion device according to the present invention is highly reliable, has a low load on the environment, and can be applied to industrial products, particularly environmentally-friendly products.
１…パワーモジュール、２…電力用半導体素子、３…外部導出端子、４…鉛フリーはんだ、８…アルミワイヤ。 DESCRIPTION OF SYMBOLS 1 ... Power module, 2 ... Power semiconductor element, 3 ... External lead-out terminal, 4 ... Lead-free solder, 8 ... Aluminum wire.
Claims (4)
The power conversion device according to claim 1, wherein the external lead-out terminal formed on the side surface opposite to the connection surface of the power semiconductor element is provided with a heat sink via an insulating layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004068305A JP2005259918A (en) | 2004-03-11 | 2004-03-11 | Power converter |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2004068305A JP2005259918A (en) | 2004-03-11 | 2004-03-11 | Power converter |
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| JP2005259918A true JP2005259918A (en) | 2005-09-22 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008135691A (en) * | 2006-10-30 | 2008-06-12 | Denso Corp | Wiring board |
| JP2008277483A (en) * | 2007-04-27 | 2008-11-13 | Nissan Motor Co Ltd | Semiconductor device and cooling method thereof |
| JP2011086768A (en) * | 2009-10-15 | 2011-04-28 | Mitsubishi Electric Corp | Power semiconductor device and manufacturing method therefor |
| JP2019087729A (en) * | 2017-11-06 | 2019-06-06 | モレックス エルエルシー | Circuit assembly and mounting unit |
-
2004
- 2004-03-11 JP JP2004068305A patent/JP2005259918A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008135691A (en) * | 2006-10-30 | 2008-06-12 | Denso Corp | Wiring board |
| JP2008277483A (en) * | 2007-04-27 | 2008-11-13 | Nissan Motor Co Ltd | Semiconductor device and cooling method thereof |
| JP2011086768A (en) * | 2009-10-15 | 2011-04-28 | Mitsubishi Electric Corp | Power semiconductor device and manufacturing method therefor |
| JP2019087729A (en) * | 2017-11-06 | 2019-06-06 | モレックス エルエルシー | Circuit assembly and mounting unit |
| JP7181015B2 (en) | 2017-11-06 | 2022-11-30 | モレックス エルエルシー | Circuit assembly and mounting unit |
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