JP2005259891A - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP2005259891A
JP2005259891A JP2004067647A JP2004067647A JP2005259891A JP 2005259891 A JP2005259891 A JP 2005259891A JP 2004067647 A JP2004067647 A JP 2004067647A JP 2004067647 A JP2004067647 A JP 2004067647A JP 2005259891 A JP2005259891 A JP 2005259891A
Authority
JP
Japan
Prior art keywords
light
light emitting
emitting layer
refractive index
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004067647A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005259891A5 (enExample
Inventor
Yoshinobu Suehiro
好伸 末広
Jun Ito
潤 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyoda Gosei Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd filed Critical Toyoda Gosei Co Ltd
Priority to JP2004067647A priority Critical patent/JP2005259891A/ja
Priority to US11/074,939 priority patent/US20050199887A1/en
Publication of JP2005259891A publication Critical patent/JP2005259891A/ja
Publication of JP2005259891A5 publication Critical patent/JP2005259891A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2004067647A 2004-03-10 2004-03-10 発光装置 Withdrawn JP2005259891A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004067647A JP2005259891A (ja) 2004-03-10 2004-03-10 発光装置
US11/074,939 US20050199887A1 (en) 2004-03-10 2005-03-09 Light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004067647A JP2005259891A (ja) 2004-03-10 2004-03-10 発光装置

Publications (2)

Publication Number Publication Date
JP2005259891A true JP2005259891A (ja) 2005-09-22
JP2005259891A5 JP2005259891A5 (enExample) 2006-10-12

Family

ID=34918404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004067647A Withdrawn JP2005259891A (ja) 2004-03-10 2004-03-10 発光装置

Country Status (2)

Country Link
US (1) US20050199887A1 (enExample)
JP (1) JP2005259891A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007251169A (ja) * 2006-03-17 2007-09-27 Samsung Electro-Mechanics Co Ltd 圧力印加による波長変換型発光素子
JP2007287845A (ja) * 2006-04-14 2007-11-01 Showa Denko Kk 半導体発光素子、半導体発光素子の製造方法およびランプ
JP2007294955A (ja) * 2006-04-26 2007-11-08 Rohm & Haas Co パターン化光抽出シートおよびその製造方法
JP2007294956A (ja) * 2006-04-26 2007-11-08 Rohm & Haas Co 改良された光抽出効率を有する発光装置およびその製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060000977A (ko) * 2004-06-30 2006-01-06 엘지.필립스 엘시디 주식회사 액정표시장치의 백라이트 유닛
JP2007201420A (ja) * 2005-12-27 2007-08-09 Sharp Corp 半導体発光装置、半導体発光素子、および半導体発光装置の製造方法
JP4984824B2 (ja) * 2006-10-26 2012-07-25 豊田合成株式会社 発光装置
US20100283074A1 (en) * 2007-10-08 2010-11-11 Kelley Tommie W Light emitting diode with bonded semiconductor wavelength converter
KR101469979B1 (ko) * 2008-03-24 2014-12-05 엘지이노텍 주식회사 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
KR101449030B1 (ko) 2008-04-05 2014-10-08 엘지이노텍 주식회사 그룹 3족 질화물계 반도체 발광다이오드 소자 및 이의 제조방법
KR101134731B1 (ko) * 2009-10-22 2012-04-13 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR20120100193A (ko) * 2011-03-03 2012-09-12 서울옵토디바이스주식회사 발광 다이오드 칩
CN109671834B (zh) * 2018-12-25 2021-07-30 江苏罗化新材料有限公司 一种双面出光的led芯片csp封装结构及其封装方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11103097A (ja) * 1997-07-30 1999-04-13 Rohm Co Ltd 半導体発光素子
JP4203132B2 (ja) * 1997-03-31 2008-12-24 シャープ株式会社 発光素子及びその製造方法
US6222207B1 (en) * 1999-05-24 2001-04-24 Lumileds Lighting, U.S. Llc Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip
US6410942B1 (en) * 1999-12-03 2002-06-25 Cree Lighting Company Enhanced light extraction through the use of micro-LED arrays
AU4139101A (en) * 1999-12-03 2001-06-12 Cree Lighting Company Enhanced light extraction in leds through the use of internal and external optical elements
JP4055503B2 (ja) * 2001-07-24 2008-03-05 日亜化学工業株式会社 半導体発光素子
US6781160B1 (en) * 2003-06-24 2004-08-24 United Epitaxy Company, Ltd. Semiconductor light emitting device and method for manufacturing the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007251169A (ja) * 2006-03-17 2007-09-27 Samsung Electro-Mechanics Co Ltd 圧力印加による波長変換型発光素子
JP2007287845A (ja) * 2006-04-14 2007-11-01 Showa Denko Kk 半導体発光素子、半導体発光素子の製造方法およびランプ
US8334200B2 (en) 2006-04-14 2012-12-18 Showa Denko K.K. Semiconductor light-emitting device, method of manufacturing semiconductor light-emitting device, and lamp
JP2007294955A (ja) * 2006-04-26 2007-11-08 Rohm & Haas Co パターン化光抽出シートおよびその製造方法
JP2007294956A (ja) * 2006-04-26 2007-11-08 Rohm & Haas Co 改良された光抽出効率を有する発光装置およびその製造方法

Also Published As

Publication number Publication date
US20050199887A1 (en) 2005-09-15

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