JP2005259121A5 - - Google Patents

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Publication number
JP2005259121A5
JP2005259121A5 JP2005027207A JP2005027207A JP2005259121A5 JP 2005259121 A5 JP2005259121 A5 JP 2005259121A5 JP 2005027207 A JP2005027207 A JP 2005027207A JP 2005027207 A JP2005027207 A JP 2005027207A JP 2005259121 A5 JP2005259121 A5 JP 2005259121A5
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JP
Japan
Prior art keywords
circuit
semiconductor device
volatile memory
logic
demodulation
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Application number
JP2005027207A
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Japanese (ja)
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JP4718850B2 (en
JP2005259121A (en
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Priority to JP2005027207A priority Critical patent/JP4718850B2/en
Priority claimed from JP2005027207A external-priority patent/JP4718850B2/en
Publication of JP2005259121A publication Critical patent/JP2005259121A/en
Publication of JP2005259121A5 publication Critical patent/JP2005259121A5/ja
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Publication of JP4718850B2 publication Critical patent/JP4718850B2/en
Expired - Fee Related legal-status Critical Current
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Claims (12)

調回路と、復調回路と、論理回路と、不揮発性メモリ回路と、アンテナ回路とを有し、
前記アンテナ回路は、前記変調回路および前記復調回路電気的に接続され
前記復調回路は前記論理回路に電気的に接続され
前記論理回路は、前記不揮発性メモリ回路に電気的に接続され、
前記不揮発性メモリ回路は、1回のみ書き込みが可能であり、前記論理回路の出力信号を記憶することを特徴とする半導体装置。
It has a modulation circuit, a demodulation circuit, a logic circuit, a nonvolatile memory circuit, an antenna circuit, a,
The antenna circuit is electrically connected to the modulation circuit and the demodulation circuit,
The demodulation circuit is electrically connected to said logic circuit,
The logic circuit is electrically connected to the nonvolatile memory circuit;
The non-volatile memory circuit, write only once are possible, wherein a and Turkey to store the output signal of the logic circuit.
請求項1において、
前記論理回路は前記不揮発性メモリ回路に記憶されたデータによって、前記不揮発性メモリ回路の書き込みの可否を制御することを特徴とする半導体装置。
In claim 1,
It said logic circuit, said by the data stored in non-volatile memory circuit, and wherein a and Turkey controls whether writing to the non-volatile memory circuit.
請求項1または請求項2において、
前記不揮発性メモリ回路を構成する素子はフローティングゲートを有し、前記フローティングゲートに電荷を注入することにより書き込みがわれることを特徴とする半導体装置。
In claim 1 or claim 2,
The elements constituting the non-volatile memory circuit has a floating gate, a semiconductor device characterized by writing dividing lines by injecting charges into the floating gate.
請求項1または請求項2において、
前記不揮発性メモリ回路を構成する素子はゲート絶縁膜を有し、前記ゲート絶縁膜に電荷を注入することにより書き込みがわれることを特徴とする半導体装置。
In claim 1 or claim 2,
The elements constituting the non-volatile memory circuit has a gate insulating film, a semiconductor device characterized by writing dividing lines by injecting charges into the gate insulating film.
請求項1乃至請求項4のいずれか一項おいて、
記アンテナ回路から出力される信号を整流する整流回路と、前記整流回路で整流された電圧を安定化する安定化回路と、前記安定化回路で安定化された電圧を昇圧する昇圧電源回路と、を有し、
前記昇圧電源回路で昇圧された電圧を用いて前記不揮発性メモリ回路に書き込みを行うことを特徴とする半導体装置。
Any Oite to one of claims 1 to 4,
A rectifier circuit for rectifying the signal outputted from the pre-Symbol antenna circuit, a stabilizing circuit for stabilizing the rectified voltage by said rectifier circuit, a booster power supply circuit for boosting the regulated voltage by the stabilization circuit Have
The semiconductor device, wherein a voltage boosted by the boost power supply circuit is used to write to the nonvolatile memory circuit .
請求項1乃至請求項4のいずれか一項おいて、
部高圧電源から出力される電圧を用いて前記不揮発性メモリ回路に書き込みを行うことを特徴とする半導体装置。
Any Oite to one of claims 1 to 4,
Wherein a writing to the nonvolatile memory circuit using a voltage output from the external high voltage power supply.
請求項1乃至請求項6のいずれか一項において、
前記変調回路、前記復調回路、前記論理回路および前記不揮発性メモリ回路のうち、少なくとも一つは薄膜トランジスタで構成されることを特徴とする半導体装置。
In any one of Claims 1 thru | or 6 ,
The modulation circuits, the demodulation circuits, the one of the logic circuit and the nonvolatile memory circuits, at least one wherein a Rukoto is a thin film transistor.
請求項1乃至請求項7のいずれか一項において、
前記アンテナ回路、前記変調回路、前記復調回路、前記論理回路および前記不揮発性メモリ回路は、同一の絶縁基板上に設けられることを特徴とする半導体装置。
In any one of Claims 1 thru | or 7 ,
The antenna circuitry, the modulation circuits, the demodulation circuitry, the logic circuitry and the non-volatile memory circuits to a semiconductor device and which are located on the same insulating substrate.
請求項1乃至請求項7のいずれか一項において、
前記変調回路、前記復調回路、前記論理回路および前記不揮発性メモリ回路は第1の絶縁基板上に一体形成され、
前記アンテナ回路は、第2の絶縁基板上に設けられることを特徴とする半導体装置。
In any one of Claims 1 thru | or 7 ,
The modulation circuits, the demodulation circuitry, the logic circuitry and the non-volatile memory circuits are integrally formed on the first insulating substrate,
The antenna circuit, wherein a provided in the second insulating substrate.
請求項9において、In claim 9,
前記第2の絶縁基板は、前記第1の絶縁基板上に設けられることを特徴とする半導体装置。The semiconductor device according to claim 1, wherein the second insulating substrate is provided on the first insulating substrate.
請求項1乃至請求項10のいずれか一項において、
前記アンテナ回路に入力される信号は無線信号であることを特徴とする半導体装置。
In any one of Claims 1 to 10 ,
A semiconductor device, wherein a signal input to the antenna circuit is a radio signal.
請求項1乃至請求項11のいずれか一項に記載された半導体装置を有するICカード、ICタグ、RFID、トランスポンダ、紙幣、有価証券、パスポート、電子機器、バッグ、衣類。 An IC card, IC tag, RFID, transponder, banknote, securities, passport, electronic device, bag, and clothing having the semiconductor device according to any one of claims 1 to 11 .
JP2005027207A 2004-02-12 2005-02-03 Semiconductor devices, IC cards, IC tags, RFID, transponders, banknotes, securities, passports, electronic devices, bags, and clothing Expired - Fee Related JP4718850B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005027207A JP4718850B2 (en) 2004-02-12 2005-02-03 Semiconductor devices, IC cards, IC tags, RFID, transponders, banknotes, securities, passports, electronic devices, bags, and clothing

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004034845 2004-02-12
JP2004034845 2004-02-12
JP2005027207A JP4718850B2 (en) 2004-02-12 2005-02-03 Semiconductor devices, IC cards, IC tags, RFID, transponders, banknotes, securities, passports, electronic devices, bags, and clothing

Publications (3)

Publication Number Publication Date
JP2005259121A JP2005259121A (en) 2005-09-22
JP2005259121A5 true JP2005259121A5 (en) 2008-03-06
JP4718850B2 JP4718850B2 (en) 2011-07-06

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JP2005027207A Expired - Fee Related JP4718850B2 (en) 2004-02-12 2005-02-03 Semiconductor devices, IC cards, IC tags, RFID, transponders, banknotes, securities, passports, electronic devices, bags, and clothing

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JP (1) JP4718850B2 (en)

Families Citing this family (16)

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US8269630B2 (en) 2005-12-09 2012-09-18 Tego Inc. Methods and systems of a multiple radio frequency network node RFID tag
US9418263B2 (en) 2005-12-09 2016-08-16 Tego, Inc. Operating systems for an RFID tag
US9117128B2 (en) 2005-12-09 2015-08-25 Tego, Inc. External access to memory on an RFID tag
US8242908B2 (en) 2005-12-09 2012-08-14 Tego Inc. Methods and systems of a multiple radio frequency network node RFID tag
US9430732B2 (en) 2014-05-08 2016-08-30 Tego, Inc. Three-dimension RFID tag with opening through structure
US8279065B2 (en) 2005-12-09 2012-10-02 Tego Inc. Methods and systems of a multiple radio frequency network node RFID tag
US9542577B2 (en) 2005-12-09 2017-01-10 Tego, Inc. Information RFID tagging facilities
US8390456B2 (en) 2008-12-03 2013-03-05 Tego Inc. RFID tag facility with access to external devices
WO2007068002A2 (en) 2005-12-09 2007-06-14 Tego Inc. Multiple radio frequency network node rfid tag
US8988223B2 (en) 2005-12-09 2015-03-24 Tego Inc. RFID drive management facility
US8242911B2 (en) 2006-12-11 2012-08-14 Tego Inc. Composite multiple RFID tag facility
US8947233B2 (en) 2005-12-09 2015-02-03 Tego Inc. Methods and systems of a multiple radio frequency network node RFID tag
US9361568B2 (en) 2005-12-09 2016-06-07 Tego, Inc. Radio frequency identification tag with hardened memory system
JP2007201437A (en) * 2005-12-27 2007-08-09 Semiconductor Energy Lab Co Ltd Semiconductor device
WO2008137806A1 (en) * 2007-05-03 2008-11-13 Tego Inc. Multiple radio frequency network node rfid tag utilizing otp memory systems
US9953193B2 (en) 2014-09-30 2018-04-24 Tego, Inc. Operating systems for an RFID tag

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Publication number Priority date Publication date Assignee Title
JPH02259937A (en) * 1989-03-31 1990-10-22 Oki Electric Ind Co Ltd Testing method for one-chip microcomputer for ic card
JPH11297963A (en) * 1998-04-10 1999-10-29 Toshiba Corp Charge storage capacitance device and manufacture therefor, semiconductor memory device mounted therewith and id card using the same
JP2000035991A (en) * 1998-05-11 2000-02-02 Sony Corp History information recorder and product provided with the same
JP2000020665A (en) * 1998-06-30 2000-01-21 Toshiba Corp Semiconductor device
JP4231148B2 (en) * 1998-12-04 2009-02-25 大日本印刷株式会社 Portable storage medium and method for issuing the same
JP2002269519A (en) * 2001-03-09 2002-09-20 Sharp Corp Semiconductor device and ic card using the same

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