JP2005259121A5 - - Google Patents
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- JP2005259121A5 JP2005259121A5 JP2005027207A JP2005027207A JP2005259121A5 JP 2005259121 A5 JP2005259121 A5 JP 2005259121A5 JP 2005027207 A JP2005027207 A JP 2005027207A JP 2005027207 A JP2005027207 A JP 2005027207A JP 2005259121 A5 JP2005259121 A5 JP 2005259121A5
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- JP
- Japan
- Prior art keywords
- circuit
- semiconductor device
- volatile memory
- logic
- demodulation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Claims (12)
前記アンテナ回路は、前記変調回路および前記復調回路に電気的に接続され、
前記復調回路は、前記論理回路に電気的に接続され、
前記論理回路は、前記不揮発性メモリ回路に電気的に接続され、
前記不揮発性メモリ回路は、1回のみ書き込みが可能であり、前記論理回路の出力信号を記憶することを特徴とする半導体装置。 It has a modulation circuit, a demodulation circuit, a logic circuit, a nonvolatile memory circuit, an antenna circuit, a,
The antenna circuit is electrically connected to the modulation circuit and the demodulation circuit,
The demodulation circuit is electrically connected to said logic circuit,
The logic circuit is electrically connected to the nonvolatile memory circuit;
The non-volatile memory circuit, write only once are possible, wherein a and Turkey to store the output signal of the logic circuit.
前記論理回路は、前記不揮発性メモリ回路に記憶されたデータによって、前記不揮発性メモリ回路への書き込みの可否を制御することを特徴とする半導体装置。 In claim 1,
It said logic circuit, said by the data stored in non-volatile memory circuit, and wherein a and Turkey controls whether writing to the non-volatile memory circuit.
前記不揮発性メモリ回路を構成する素子はフローティングゲートを有し、前記フローティングゲートに電荷を注入することにより書き込みが行われることを特徴とする半導体装置。 In claim 1 or claim 2,
The elements constituting the non-volatile memory circuit has a floating gate, a semiconductor device characterized by writing dividing lines by injecting charges into the floating gate.
前記不揮発性メモリ回路を構成する素子はゲート絶縁膜を有し、前記ゲート絶縁膜に電荷を注入することにより書き込みが行われることを特徴とする半導体装置。 In claim 1 or claim 2,
The elements constituting the non-volatile memory circuit has a gate insulating film, a semiconductor device characterized by writing dividing lines by injecting charges into the gate insulating film.
前記アンテナ回路から出力される信号を整流する整流回路と、前記整流回路で整流された電圧を安定化する安定化回路と、前記安定化回路で安定化された電圧を昇圧する昇圧電源回路と、を有し、
前記昇圧電源回路で昇圧された電圧を用いて前記不揮発性メモリ回路に書き込みを行うことを特徴とする半導体装置。 Any Oite to one of claims 1 to 4,
A rectifier circuit for rectifying the signal outputted from the pre-Symbol antenna circuit, a stabilizing circuit for stabilizing the rectified voltage by said rectifier circuit, a booster power supply circuit for boosting the regulated voltage by the stabilization circuit Have
The semiconductor device, wherein a voltage boosted by the boost power supply circuit is used to write to the nonvolatile memory circuit .
外部高圧電源から出力される電圧を用いて前記不揮発性メモリ回路に書き込みを行うことを特徴とする半導体装置。 Any Oite to one of claims 1 to 4,
Wherein a writing to the nonvolatile memory circuit using a voltage output from the external high voltage power supply.
前記変調回路、前記復調回路、前記論理回路および前記不揮発性メモリ回路のうち、少なくとも一つは薄膜トランジスタで構成されることを特徴とする半導体装置。 In any one of Claims 1 thru | or 6 ,
The modulation circuits, the demodulation circuits, the one of the logic circuit and the nonvolatile memory circuits, at least one wherein a Rukoto is a thin film transistor.
前記アンテナ回路、前記変調回路、前記復調回路、前記論理回路および前記不揮発性メモリ回路は、同一の絶縁基板上に設けられることを特徴とする半導体装置。 In any one of Claims 1 thru | or 7 ,
The antenna circuitry, the modulation circuits, the demodulation circuitry, the logic circuitry and the non-volatile memory circuits to a semiconductor device and which are located on the same insulating substrate.
前記変調回路、前記復調回路、前記論理回路および前記不揮発性メモリ回路は、第1の絶縁基板上に一体形成され、
前記アンテナ回路は、第2の絶縁基板上に設けられることを特徴とする半導体装置。 In any one of Claims 1 thru | or 7 ,
The modulation circuits, the demodulation circuitry, the logic circuitry and the non-volatile memory circuits are integrally formed on the first insulating substrate,
The antenna circuit, wherein a provided in the second insulating substrate.
前記第2の絶縁基板は、前記第1の絶縁基板上に設けられることを特徴とする半導体装置。The semiconductor device according to claim 1, wherein the second insulating substrate is provided on the first insulating substrate.
前記アンテナ回路に入力される信号は無線信号であることを特徴とする半導体装置。 In any one of Claims 1 to 10 ,
A semiconductor device, wherein a signal input to the antenna circuit is a radio signal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005027207A JP4718850B2 (en) | 2004-02-12 | 2005-02-03 | Semiconductor devices, IC cards, IC tags, RFID, transponders, banknotes, securities, passports, electronic devices, bags, and clothing |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004034845 | 2004-02-12 | ||
JP2004034845 | 2004-02-12 | ||
JP2005027207A JP4718850B2 (en) | 2004-02-12 | 2005-02-03 | Semiconductor devices, IC cards, IC tags, RFID, transponders, banknotes, securities, passports, electronic devices, bags, and clothing |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2005259121A JP2005259121A (en) | 2005-09-22 |
JP2005259121A5 true JP2005259121A5 (en) | 2008-03-06 |
JP4718850B2 JP4718850B2 (en) | 2011-07-06 |
Family
ID=35084721
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005027207A Expired - Fee Related JP4718850B2 (en) | 2004-02-12 | 2005-02-03 | Semiconductor devices, IC cards, IC tags, RFID, transponders, banknotes, securities, passports, electronic devices, bags, and clothing |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4718850B2 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8269630B2 (en) | 2005-12-09 | 2012-09-18 | Tego Inc. | Methods and systems of a multiple radio frequency network node RFID tag |
US9418263B2 (en) | 2005-12-09 | 2016-08-16 | Tego, Inc. | Operating systems for an RFID tag |
US9117128B2 (en) | 2005-12-09 | 2015-08-25 | Tego, Inc. | External access to memory on an RFID tag |
US8242908B2 (en) | 2005-12-09 | 2012-08-14 | Tego Inc. | Methods and systems of a multiple radio frequency network node RFID tag |
US9430732B2 (en) | 2014-05-08 | 2016-08-30 | Tego, Inc. | Three-dimension RFID tag with opening through structure |
US8279065B2 (en) | 2005-12-09 | 2012-10-02 | Tego Inc. | Methods and systems of a multiple radio frequency network node RFID tag |
US9542577B2 (en) | 2005-12-09 | 2017-01-10 | Tego, Inc. | Information RFID tagging facilities |
US8390456B2 (en) | 2008-12-03 | 2013-03-05 | Tego Inc. | RFID tag facility with access to external devices |
WO2007068002A2 (en) | 2005-12-09 | 2007-06-14 | Tego Inc. | Multiple radio frequency network node rfid tag |
US8988223B2 (en) | 2005-12-09 | 2015-03-24 | Tego Inc. | RFID drive management facility |
US8242911B2 (en) | 2006-12-11 | 2012-08-14 | Tego Inc. | Composite multiple RFID tag facility |
US8947233B2 (en) | 2005-12-09 | 2015-02-03 | Tego Inc. | Methods and systems of a multiple radio frequency network node RFID tag |
US9361568B2 (en) | 2005-12-09 | 2016-06-07 | Tego, Inc. | Radio frequency identification tag with hardened memory system |
JP2007201437A (en) * | 2005-12-27 | 2007-08-09 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
WO2008137806A1 (en) * | 2007-05-03 | 2008-11-13 | Tego Inc. | Multiple radio frequency network node rfid tag utilizing otp memory systems |
US9953193B2 (en) | 2014-09-30 | 2018-04-24 | Tego, Inc. | Operating systems for an RFID tag |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02259937A (en) * | 1989-03-31 | 1990-10-22 | Oki Electric Ind Co Ltd | Testing method for one-chip microcomputer for ic card |
JPH11297963A (en) * | 1998-04-10 | 1999-10-29 | Toshiba Corp | Charge storage capacitance device and manufacture therefor, semiconductor memory device mounted therewith and id card using the same |
JP2000035991A (en) * | 1998-05-11 | 2000-02-02 | Sony Corp | History information recorder and product provided with the same |
JP2000020665A (en) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | Semiconductor device |
JP4231148B2 (en) * | 1998-12-04 | 2009-02-25 | 大日本印刷株式会社 | Portable storage medium and method for issuing the same |
JP2002269519A (en) * | 2001-03-09 | 2002-09-20 | Sharp Corp | Semiconductor device and ic card using the same |
-
2005
- 2005-02-03 JP JP2005027207A patent/JP4718850B2/en not_active Expired - Fee Related
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