JP2005252350A - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP2005252350A JP2005252350A JP2004056146A JP2004056146A JP2005252350A JP 2005252350 A JP2005252350 A JP 2005252350A JP 2004056146 A JP2004056146 A JP 2004056146A JP 2004056146 A JP2004056146 A JP 2004056146A JP 2005252350 A JP2005252350 A JP 2005252350A
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- 238000003384 imaging method Methods 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000007704 transition Effects 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 description 10
- 238000005036 potential barrier Methods 0.000 description 8
- 238000011144 upstream manufacturing Methods 0.000 description 7
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000750 progressive effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
- E04G17/00—Connecting or other auxiliary members for forms, falsework structures, or shutterings
- E04G17/06—Tying means; Spacers ; Devices for extracting or inserting wall ties
- E04G17/07—Tying means, the tensional elements of which are fastened or tensioned by means of wedge-shaped members
- E04G17/0728—Tying means, the tensional elements of which are fastened or tensioned by means of wedge-shaped members the element consisting of several parts
- E04G17/0735—Tying means, the tensional elements of which are fastened or tensioned by means of wedge-shaped members the element consisting of several parts fully recoverable
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- E—FIXED CONSTRUCTIONS
- E04—BUILDING
- E04G—SCAFFOLDING; FORMS; SHUTTERING; BUILDING IMPLEMENTS OR AIDS, OR THEIR USE; HANDLING BUILDING MATERIALS ON THE SITE; REPAIRING, BREAKING-UP OR OTHER WORK ON EXISTING BUILDINGS
- E04G17/00—Connecting or other auxiliary members for forms, falsework structures, or shutterings
- E04G17/06—Tying means; Spacers ; Devices for extracting or inserting wall ties
- E04G17/0644—Plug means for tie-holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
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- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Architecture (AREA)
- Mechanical Engineering (AREA)
- Civil Engineering (AREA)
- Structural Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】 半導体基板表面90に複数の受光部4と、垂直転送チャネル5と、垂直転送電極8,9,10,11の組とを備える。列方向に並ぶ受光部4,4同士の間がそれぞれ画素分離領域7で分離されている。垂直転送チャネル5のうち受光部4の横に相当する第1部分5aの幅W0に比して、垂直転送チャネル5のうち画素分離領域7の横に相当する第2部分5bの幅W1が広くなっている。
【選択図】図1
Description
半導体基板表面に行列状に配列された、入射光を信号電荷に変換する複数の受光部と、
上記半導体基板表面で上記受光部がなす各列に沿ってそれぞれ一方向に延在する垂直転送チャネルと、
上記垂直転送チャネル上に並べて設けられ、上記垂直転送チャネルを通して上記信号電荷を転送するように、それぞれ上記垂直転送チャネルのうち対応する部分のポテンシャルを制御する垂直転送電極の組とを備え、
列方向に並ぶ上記受光部同士の間がそれぞれ画素分離領域で分離され、
上記垂直転送チャネルは少なくとも第1部分と第2部分とを備え、上記第1部分の幅に比して上記第2部分の幅が広く、上記第1部分は行方向に上記受光部と並び、上記第2部分は行方向に上記画素分離領域と並ぶことを特徴とする。
5 垂直転送チャネル
6 トランスファゲート領域
7 画素分離領域
8,9,10,11 垂直転送電極
Claims (4)
- 半導体基板表面に行列状に配列された、入射光を信号電荷に変換する複数の受光部と、
上記半導体基板表面で上記受光部がなす各列に沿ってそれぞれ一方向に延在する垂直転送チャネルと、
上記垂直転送チャネル上に並べて設けられ、上記垂直転送チャネルを通して上記信号電荷を転送するように、それぞれ上記垂直転送チャネルのうち対応する部分のポテンシャルを制御する垂直転送電極の組とを備え、
列方向に並ぶ上記受光部同士の間がそれぞれ画素分離領域で分離され、
上記垂直転送チャネルは少なくとも第1部分と第2部分とを備え、上記第1部分の幅に比して上記第2部分の幅が広く、上記第1部分は行方向に上記受光部と並び、上記第2部分は行方向に上記画素分離領域と並ぶことを特徴とする固体撮像装置。 - 請求項1に記載の固体撮像装置において、
上記垂直転送チャネルの幅は、少なくとも上記第2部分とその第2部分に対して転送方向下流側に隣り合う第1部分との間で、連続的又は段階的に変化しており、
上記第2部分とその第2部分に対して転送方向下流側に隣り合う第1部分との間で上記垂直転送チャネルの幅が連続的に変化している遷移領域上に、上記垂直転送チャネル上で隣り合う二つの垂直転送電極の間の境界部が存在することを特徴とする固体撮像装置。 - 請求項1に記載の固体撮像装置において、
上記垂直転送チャネルの上記第2部分の幅は、片側のみに広がっていることを特徴とする固体撮像装置。 - 請求項1に記載の固体撮像装置において、
上記第2部分は一つの垂直転送電極に面し、
上記第1部分は複数の垂直転送電極に面し、
上記第2部分の長さは、上記第1部分のうち各一つの垂直転送電極に対応する部分の長さよりも短いことを特徴とする固体撮像装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004056146A JP4214066B2 (ja) | 2004-03-01 | 2004-03-01 | 固体撮像装置 |
KR1020050016404A KR100707144B1 (ko) | 2004-03-01 | 2005-02-28 | 고체촬상장치 |
US11/068,682 US20050206765A1 (en) | 2004-03-01 | 2005-02-28 | Solid-state image pickup device |
TW094106085A TWI258215B (en) | 2004-03-01 | 2005-03-01 | Solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004056146A JP4214066B2 (ja) | 2004-03-01 | 2004-03-01 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005252350A true JP2005252350A (ja) | 2005-09-15 |
JP4214066B2 JP4214066B2 (ja) | 2009-01-28 |
Family
ID=34985811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004056146A Expired - Fee Related JP4214066B2 (ja) | 2004-03-01 | 2004-03-01 | 固体撮像装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050206765A1 (ja) |
JP (1) | JP4214066B2 (ja) |
KR (1) | KR100707144B1 (ja) |
TW (1) | TWI258215B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108609A (ja) * | 2004-09-09 | 2006-04-20 | Sony Corp | 固体撮像装置 |
CN102034840A (zh) * | 2009-10-05 | 2011-04-27 | 索尼公司 | 固体摄像器件、其制造方法及电子装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4433528B2 (ja) * | 1998-12-08 | 2010-03-17 | ソニー株式会社 | 固体撮像素子及びその製造方法 |
US7436011B2 (en) * | 2005-11-10 | 2008-10-14 | Pixart Imaging Inc. | CMOS image sensor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100311492B1 (ko) * | 1998-12-18 | 2001-11-30 | 김영환 | 고체촬상소자 |
US6933976B1 (en) * | 1999-09-03 | 2005-08-23 | Fuji Photo Film Co., Ltd. | Solid-state image pickup device |
JP4199387B2 (ja) * | 1999-10-07 | 2008-12-17 | 富士フイルム株式会社 | 電荷転送路およびそれを用いた固体撮像装置 |
-
2004
- 2004-03-01 JP JP2004056146A patent/JP4214066B2/ja not_active Expired - Fee Related
-
2005
- 2005-02-28 US US11/068,682 patent/US20050206765A1/en not_active Abandoned
- 2005-02-28 KR KR1020050016404A patent/KR100707144B1/ko not_active IP Right Cessation
- 2005-03-01 TW TW094106085A patent/TWI258215B/zh not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006108609A (ja) * | 2004-09-09 | 2006-04-20 | Sony Corp | 固体撮像装置 |
JP4649989B2 (ja) * | 2004-09-09 | 2011-03-16 | ソニー株式会社 | 固体撮像装置 |
CN102034840A (zh) * | 2009-10-05 | 2011-04-27 | 索尼公司 | 固体摄像器件、其制造方法及电子装置 |
CN102034840B (zh) * | 2009-10-05 | 2013-04-03 | 索尼公司 | 固体摄像器件、其制造方法及电子装置 |
Also Published As
Publication number | Publication date |
---|---|
KR100707144B1 (ko) | 2007-04-13 |
US20050206765A1 (en) | 2005-09-22 |
KR20060043224A (ko) | 2006-05-15 |
TW200541065A (en) | 2005-12-16 |
TWI258215B (en) | 2006-07-11 |
JP4214066B2 (ja) | 2009-01-28 |
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