JP2005244227A - ウエハの二次元スキャン機構 - Google Patents

ウエハの二次元スキャン機構 Download PDF

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Publication number
JP2005244227A
JP2005244227A JP2005045898A JP2005045898A JP2005244227A JP 2005244227 A JP2005244227 A JP 2005244227A JP 2005045898 A JP2005045898 A JP 2005045898A JP 2005045898 A JP2005045898 A JP 2005045898A JP 2005244227 A JP2005244227 A JP 2005244227A
Authority
JP
Japan
Prior art keywords
link
end effector
scanning device
joint
operable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005045898A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005244227A5 (enExample
Inventor
Michael Ioannou
ローンヌー マイケル
Mehran Asdigha
アズディーガ メラン
Joseph Ferrara
フェラーラ ジョセフ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Axcelis Technologies Inc
Original Assignee
Axcelis Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Technologies Inc filed Critical Axcelis Technologies Inc
Publication of JP2005244227A publication Critical patent/JP2005244227A/ja
Publication of JP2005244227A5 publication Critical patent/JP2005244227A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2005045898A 2004-02-25 2005-02-22 ウエハの二次元スキャン機構 Withdrawn JP2005244227A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/786,660 US7112808B2 (en) 2004-02-25 2004-02-25 Wafer 2D scan mechanism

Publications (2)

Publication Number Publication Date
JP2005244227A true JP2005244227A (ja) 2005-09-08
JP2005244227A5 JP2005244227A5 (enExample) 2008-03-13

Family

ID=34861806

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005045898A Withdrawn JP2005244227A (ja) 2004-02-25 2005-02-22 ウエハの二次元スキャン機構

Country Status (2)

Country Link
US (1) US7112808B2 (enExample)
JP (1) JP2005244227A (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7112808B2 (en) 2004-02-25 2006-09-26 Axcelis Technologies, Inc. Wafer 2D scan mechanism
US7323695B2 (en) * 2004-04-05 2008-01-29 Axcelis Technologies, Inc. Reciprocating drive for scanning a workpiece
KR20060128001A (ko) * 2004-04-09 2006-12-13 액셀리스 테크놀로지스, 인크. 스프링 및 평형추를 이용한 왕복 회전 운동에 의한 웨이퍼주사 시스템
US7119343B2 (en) * 2004-05-06 2006-10-10 Axcelis Technologies, Inc. Mechanical oscillator for wafer scan with spot beam
CN1291445C (zh) * 2004-06-18 2006-12-20 清华大学 离子注入机中的靶盘角度控制与扫描运动机构
WO2007065134A2 (en) * 2005-12-01 2007-06-07 Epion Corporation Method and apparatus for scanning a workpiece through an ion beam
US20080023654A1 (en) * 2006-07-28 2008-01-31 Michael Graf Method of reducing transient wafer temperature during implantation
US7582883B2 (en) * 2007-01-12 2009-09-01 Applied Materials, Inc. Method of scanning a substrate in an ion implanter
US8791430B2 (en) 2011-03-04 2014-07-29 Tel Epion Inc. Scanner for GCIB system
US9029808B2 (en) 2011-03-04 2015-05-12 Tel Epion Inc. Low contamination scanner for GCIB system
DE112014003220B4 (de) * 2013-07-11 2025-08-28 Kla-Tencor Corporation Konfigurationen für einen Metrologietisch und Verfahren zum Betreiben des Metrologietisches
TWI866681B (zh) * 2023-12-08 2024-12-11 均華精密工業股份有限公司 同向式多軸作業設備

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4736107A (en) 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
US5737500A (en) * 1992-03-11 1998-04-07 California Institute Of Technology Mobile dexterous siren degree of freedom robot arm with real-time control system
US5486080A (en) 1994-06-30 1996-01-23 Diamond Semiconductor Group, Inc. High speed movement of workpieces in vacuum processing
US5741113A (en) * 1995-07-10 1998-04-21 Kensington Laboratories, Inc. Continuously rotatable multiple link robot arm mechanism
US6428266B1 (en) * 1995-07-10 2002-08-06 Brooks Automation, Inc. Direct driven robot
US5746565A (en) 1996-01-22 1998-05-05 Integrated Solutions, Inc. Robotic wafer handler
JP3729604B2 (ja) 1997-06-16 2005-12-21 住友イートンノバ株式会社 イオン注入装置
US6384418B1 (en) 1998-05-18 2002-05-07 Seiko Instruments Inc. Sample transfer apparatus and sample stage
GB2382717B (en) 1998-07-21 2003-09-03 Applied Materials Inc Ion Implantation Beam Monitor
US6207959B1 (en) 1999-04-19 2001-03-27 Applied Materials, Inc. Ion implanter
EP1056114A3 (en) 1999-05-24 2007-05-09 Applied Materials, Inc. Ion implantation apparatus
JP3976455B2 (ja) 1999-09-17 2007-09-19 株式会社日立製作所 イオン注入装置
US6515288B1 (en) 2000-03-16 2003-02-04 Applied Materials, Inc. Vacuum bearing structure and a method of supporting a movable member
US6677599B2 (en) 2000-03-27 2004-01-13 Applied Materials, Inc. System and method for uniformly implanting a wafer with an ion beam
WO2001088949A2 (en) 2000-05-15 2001-11-22 Varian Semiconductor Equipment Associates, Inc. High efficiency scanning in ion implanters
US20020125446A1 (en) 2001-02-20 2002-09-12 Vanderpot John W. Substrate positioning system
JP4061044B2 (ja) 2001-10-05 2008-03-12 住友重機械工業株式会社 基板移動装置
ATE339773T1 (de) * 2001-11-29 2006-10-15 Diamond Semiconductor Group Ll Waferhandhabungsvorrichtung und verfahren dafür
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US6956223B2 (en) 2002-04-10 2005-10-18 Applied Materials, Inc. Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
GB2389958B (en) 2002-06-21 2005-09-07 Applied Materials Inc Multi directional mechanical scanning in an ion implanter
US7049210B2 (en) 2002-09-23 2006-05-23 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US7112808B2 (en) 2004-02-25 2006-09-26 Axcelis Technologies, Inc. Wafer 2D scan mechanism
US6953942B1 (en) 2004-09-20 2005-10-11 Axcelis Technologies, Inc. Ion beam utilization during scanned ion implantation

Also Published As

Publication number Publication date
US7112808B2 (en) 2006-09-26
US20050184253A1 (en) 2005-08-25

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