JP2005243710A - 露光装置及びその制御方法、デバイス製造方法 - Google Patents

露光装置及びその制御方法、デバイス製造方法 Download PDF

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Publication number
JP2005243710A
JP2005243710A JP2004048174A JP2004048174A JP2005243710A JP 2005243710 A JP2005243710 A JP 2005243710A JP 2004048174 A JP2004048174 A JP 2004048174A JP 2004048174 A JP2004048174 A JP 2004048174A JP 2005243710 A JP2005243710 A JP 2005243710A
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Prior art keywords
reticle
measurement
surface shape
exposure apparatus
measuring
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JP2004048174A
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Japanese (ja)
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JP2005243710A5 (enrdf_load_stackoverflow
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Takenobu Kobayashi
威宣 小林
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Canon Inc
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Canon Inc
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Priority to JP2004048174A priority Critical patent/JP2005243710A/ja
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Publication of JP2005243710A5 publication Critical patent/JP2005243710A5/ja
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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2004048174A 2004-02-24 2004-02-24 露光装置及びその制御方法、デバイス製造方法 Withdrawn JP2005243710A (ja)

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JP2005243710A true JP2005243710A (ja) 2005-09-08
JP2005243710A5 JP2005243710A5 (enrdf_load_stackoverflow) 2007-04-12

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7853067B2 (en) 2006-10-27 2010-12-14 Asml Holding N.V. Systems and methods for lithographic reticle inspection
CN107039226A (zh) * 2016-02-04 2017-08-11 株式会社爱德万测试 曝光装置
CN111180378A (zh) * 2019-12-31 2020-05-19 中芯集成电路（宁波）有限公司 一种检测晶舟内晶圆斜插的方法及装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7853067B2 (en) 2006-10-27 2010-12-14 Asml Holding N.V. Systems and methods for lithographic reticle inspection
CN107039226A (zh) * 2016-02-04 2017-08-11 株式会社爱德万测试 曝光装置
KR20170093062A (ko) * 2016-02-04 2017-08-14 주식회사 아도반테스토 노광장치
TWI629572B (zh) * 2016-02-04 2018-07-11 日商愛德萬測試股份有限公司 曝光設備
KR101894170B1 (ko) * 2016-02-04 2018-08-31 주식회사 아도반테스토 노광장치
CN111180378A (zh) * 2019-12-31 2020-05-19 中芯集成电路（宁波）有限公司 一种检测晶舟内晶圆斜插的方法及装置
CN111180378B (zh) * 2019-12-31 2023-12-29 中芯集成电路（宁波）有限公司 一种检测晶舟内晶圆斜插的方法及装置

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