JP2005236130A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device for turning a large-area non-single crystal silicon film to be a single crystal silicon film by using a rectangular laser beams. <P>SOLUTION: The non-single crystal silicon film 05 (or 10) is formed, diffusion prevention layers 03 and 04 (or 11) in contact with the non-single crystal silicon film, and a light absorption layer 02 (or 12) are formed in contact with a surface opposing the non-single crystal silicon film of the diffusion prevention layers. In this state, the non-single crystal silicon film 05 (or 10) is scanned irradiated with a laser beam 30 by a semiconductor laser as an oscillation source. Thus, the non-single crystal silicon film is melt and crystallized to be the single crystal silicon film 05a (10a or 18). <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor element substrate such as a solar cell substrate, a TFT (Thin Film Transistor) substrate, or a semiconductor element (hereinafter collectively referred to as a semiconductor device).

  In recent years, research on forming a silicon crystal film on a non-conductive heterogeneous substrate such as a glass substrate has been actively conducted. The silicon crystal film formed on this glass substrate can be used for a wide range of applications, such as TFTs for liquid crystal devices (Thin Film Transistors), photoelectric conversion elements, and the like.

  A solar cell is a photoelectric conversion element that forms a crystalline silicon film with good crystallinity on a low-cost substrate and performs photoelectric conversion using this to achieve low cost and high performance. By using this, light degradation, which is a problem in amorphous silicon photoelectric conversion elements, is not observed, and even long wavelength light, which is insensitive in amorphous silicon photoelectric conversion elements, is converted into electrical energy. Can be converted. This technology is expected to be applicable not only to solar cells but also to optical sensor elements and the like.

  This solar cell generally uses a technique of directly depositing a crystalline silicon film by plasma CVD. It is known that a crystalline silicon film can be formed on a substrate at a low temperature by this method, which is said to be effective for cost reduction.

In this method, as a plasma CVD formation condition, the silane source gas is diluted with hydrogen by about 15 times or more, the pressure in the plasma reaction chamber is 10 mTorr to 10 Torr, the substrate temperature is 150 ° C. to 550 ° C., preferably 400 ° C. The film formation is controlled within the following range. Thereby, a crystalline silicon film is formed on the substrate. However, with this method, the crystal grain size of the crystalline silicon film is at most several μm, and it is difficult to make the grain size larger than the film thickness. Moreover, in this method, columnar crystals grow from the substrate, but there are many defects inside the crystals and the quality of the crystals is not so good. In addition, the quality of the i layer, which is the basis of the power generation function, is drastically lowered when doping is performed to optimize the device structure. For these reasons, it has been difficult for a photoelectric conversion element to achieve an efficiency significantly exceeding 10% with a single cell advantageous for cost reduction. Moreover, it was difficult for the low temperature growth polycrystalline silicon for liquid crystal devices to have a mobility exceeding 10 cm ² / Vs.

  On the other hand, various attempts to crystallize by scanning with laser light have been studied, and a method using a continuous wave laser is disclosed in Japanese Patent Laid-Open No. 2001-351863 (see Patent Document 1) as an example. In this method, amorphous silicon is formed on a heterogeneous substrate, and a polycrystalline silicon film is melted and crystallized by scanning a band-like continuous wave laser beam. It is possible.

When crystallization is performed using this continuous wave laser beam, attempts have been made to perform crystallization using a second harmonic of a solid-state laser such as Nd: YAG or Nd: YVO ₄ . By using these solid-state lasers, it has become possible to significantly reduce the running cost and at the same time form a high-quality polycrystalline silicon film.

As described above, a method of crystallizing amorphous silicon by irradiating it with continuous wave (CW) laser light has been proposed. In this method, the first of a continuous oscillation Nd: YAG or Nd: YVO ₄ laser is proposed. Irradiate the second harmonic. This method is being developed for TFTs for liquid crystal devices. Therefore, it is required to be flat because a MOSFET is formed on the surface, and it has been reported that it can be made extremely flat by using a solid-state laser (see, for example, Non-Patent Document 1).

Further, a method of heating with a fundamental wave of a YAG laser using a light absorption layer has been proposed. By using this method, it is said that a polycrystalline silicon film having a large grain size can be obtained more efficiently than the method using the second harmonic (see, for example, Non-Patent Document 2).
JP 2001-351863 A IEICE Transactions vol. j85-cNo. 8 (2002) p601 63rd Applied Physics Related Conference Lecture Proceedings (2002.9 Niigata University) Volume 2 26a-G-6 (p780)

As laser light for directly heating and melting a precursor film such as an amorphous silicon film, there is the second harmonic of the Nd: YAG or Nd: YVO ₄ laser, but these laser lights are currently about 10 W. There are only things. For this reason, in order to obtain an energy intensity suitable for laser annealing, the diameter of the laser beam cannot be increased to several hundred μm or more, and the cross-sectional shape of the laser beam is limited to a circle. On the other hand, devices such as low-temperature grown polycrystalline silicon and solar cells for liquid crystal devices need to be uniformly crystallized over a large area. In that case, the second harmonic of the Nd: YAG or Nd: YVO ₄ laser needs to be scanned hundreds of times, resulting in very poor throughput.

On the other hand, in the fundamental wave of Nd: YAG laser or Nd: YVO ₄ laser, there is a laser light source having an output of about 200 W by CW oscillation. However, the laser light oscillated from the laser light source is a laser light having a circular cross section with a diameter of about 7 mm, and it is difficult to make it suitable for large area scanning.

  Consider a shape suitable for large area scanning. When scanning is performed using a laser beam having a certain output, the shape of the laser beam that can be scanned most efficiently is considered.

  A common cross-sectional shape of laser light is a circular Gaussian distribution. When a laser beam having such a cross-sectional shape is scanned, the central portion of the cross-section is irradiated with the laser light for a longer time with a stronger energy intensity. In contrast, the peripheral portion of the cross section is irradiated with laser light for a shorter time with a weaker energy intensity. When laser light having a Gaussian distribution with a circular cross section is used for laser annealing in this way, the energy intensity of the irradiated laser light varies greatly depending on the location of the cross section. Therefore, when trying to crystallize a larger area, it is necessary to supply stronger energy to the central portion of the cross section to make up for the energy deficient in the peripheral portion of the cross section and to melt by heat transfer. As a result, the substrate temperature rises at the center of the cross section, which is not desirable for forming a polycrystalline silicon film. In addition, since most of the laser power is concentrated at the center of the cross section, only the region smaller than the actual laser spot size can cause the melting phenomenon, so that there is a problem that the laser energy cannot be used effectively. It was.

  Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor device in which the above-described problems are solved and a non-single-crystal silicon film having a large area is made a crystalline silicon film by laser light having a rectangular cross section.

  In order to achieve the above object, the present invention is configured as follows.

    According to a first aspect of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a non-single crystal silicon film and a light absorption layer on different surfaces of a diffusion prevention layer; The non-single crystal silicon film is melted and crystallized by heat generated by irradiating and scanning the layer to form a crystalline silicon film.

  Here, the non-single crystal silicon film refers to a silicon film other than the single crystal silicon film (amorphous silicon film, microcrystalline silicon film, polycrystalline silicon film, etc.), and the crystalline silicon film is It means a silicon film having crystallinity such as a polycrystalline silicon film.

  As a semiconductor laser used in the method for manufacturing a semiconductor device of the present invention, there is an AlGaAs semiconductor laser using AlGaAs for an active layer.

  In the present invention, the light absorption layer may be formed below the non-single crystal silicon film, or may be formed above the non-single crystal silicon film. In addition, the light absorption layer and the diffusion prevention layer can be removed after melting and crystallization by laser light irradiation, if necessary.

  According to a second aspect of the present invention, in the method of manufacturing a semiconductor device according to the first aspect, the diffusion prevention layer is any one of silicon oxide, silicon nitride, silicon oxynitride, or silicon oxide, silicon nitride. It is characterized by comprising a laminated structure of silicon oxynitride.

  According to a third aspect of the present invention, in the semiconductor device manufacturing method according to the first aspect, the light absorption layer is a substance having a melting point higher than that of silicon.

  According to a fourth aspect of the present invention, in the method of manufacturing a semiconductor device according to the third aspect, the light absorption layer is tungsten or molybdenum.

  According to a fifth aspect of the present invention, in the method for manufacturing a semiconductor device according to any one of the first to fourth aspects, the wavelength of laser light using the semiconductor laser as an oscillation source is 750 nm to 900 nm.

  According to a sixth aspect of the present invention, in the method for manufacturing a semiconductor device according to any one of the first to fifth aspects, the cross-sectional shape of the laser beam using the semiconductor laser as an oscillation source is rectangular.

  According to a seventh aspect of the present invention, in the method for manufacturing a semiconductor device according to the sixth aspect, the laser beam using the semiconductor laser as an oscillation source is emitted from a semiconductor laser array in which laser units are arranged side by side, and a cross section of the laser beam. The shape is rectangular.

  According to an eighth aspect of the present invention, in the method for manufacturing a semiconductor device according to any one of the first to seventh aspects, the thickness of the crystalline silicon film is 300 nm or less.

<Key points of the invention>
As described above, the cross-sectional shape of laser light conventionally used for irradiating and scanning a large-area non-single-crystal silicon film to form a crystalline silicon film has a circular Gaussian distribution.

  On the other hand, consider using a laser beam having a rectangular cross-sectional shape and a uniform energy intensity. In this case, since the energy intensity is uniform, it is not necessary to transfer the amount of heat in the lateral direction by heat transfer. Therefore, it is only necessary to irradiate only the laser beam having the energy necessary for melting only the irradiated portion with such a shape. In addition, it is possible to crystallize a larger area by a single scan by shortening the short axis of the rectangle and lengthening the long axis.

  For the above reasons, laser light having a rectangular cross-sectional shape is a very advantageous shape for use in laser annealing.

However, it is very difficult to make a laser beam having a Gaussian distribution with a circular cross section, such as an Nd: YAG, Nd: YVO ₄ laser, or the like. Since these laser beams have very high coherence, it is difficult to make them uniform appropriately. It is also difficult to process the cross-sectional shape of laser light having a circular cross-sectional shape into a rectangular shape.

There was also a problem with the size of the laser oscillator. Although it is called a solid-state laser, the oscillation principle of laser light is as follows. It is a crystalline substance that oscillates laser light, and ions are implanted into this crystalline substance (laser crystal) to form levels. By irradiating excitation light there, the implanted ions are excited to form a population inversion and laser oscillation occurs. In particular, a laser called a four-level system, such as an Nd: YAG laser or an Nd: YVO ₄ laser, is widely used because it easily oscillates even when the excitation energy is relatively small. However, in order to excite, an excitation light source is necessary, and from this, it is necessary that an oscillator becomes larger than a semiconductor laser. The general configuration of the solid-state laser oscillator is as follows. First, a laser oscillation unit in which a laser crystal is set, an excitation laser light source, and a power source. In general, an excitation laser light source is incorporated in a laser power source that is separate from the laser oscillation unit, and is then focused on an optical fiber and introduced into the laser oscillation unit. As described above, the laser oscillation unit and the laser power source are connected by the fiber. Because of such a configuration, a width of the order of 10 cm per unit is required. Therefore, in order to form a long and narrow laser beam having a rectangular cross-section in order to irradiate a large area, several laser units are used. Need to be irradiated side by side. However, this is difficult.

  In contrast, in the present invention, a semiconductor laser is used. The semiconductor laser emits laser light, for example, from a semiconductor laser array with a rectangular cross-sectional shape. Therefore, it is not necessary to greatly change the cross-sectional shape. Since each semiconductor laser emits laser light having a rectangular cross section directly from a rectangular laser emission port, there is no need to greatly change the cross sectional shape of the laser light. Further, the semiconductor laser array having an output of 40 W has a thickness of 1 cm, a height of 2 cm, and a width of 2.5 cm, which is an order of magnitude smaller than that of the solid-state laser oscillation unit. Therefore, by laminating the laser units, it is possible to irradiate a large area simultaneously with one scanning. Moreover, the handling is also easy.

  A semiconductor laser is generally manufactured with a pin structure in a vertical direction (a structure in which a p layer and an n layer are formed so as to sandwich an i layer). Of this pin structure, the i layer is used as the active layer. When a forward current is passed through the planar semiconductor laser, p-type and n-type carriers are injected into the i layer, and photons are emitted when the carriers recombine. At this time, inversion distribution is formed by sufficiently injecting carriers having high energy into the i layer, and the emitted photons are resonated to oscillate laser light. Therefore, since an excitation light source is not required unlike a solid-state laser, the apparatus configuration is easy and no maintenance is required.

  By using a semiconductor laser in this way, a large area can be crystallized with high throughput. The fundamental wave wavelength of the solid-state laser is 1064 nm. On the other hand, high-power semiconductor lasers use AlGaAs as an active layer and have a wavelength of 750 to 900 nm, which is shorter than that of a solid-state laser. For this reason, when the precursor film is thick, it can be melted by directly irradiating the precursor film with laser light.

  However, when the precursor film is thin or when the energy intensity is lowered and the large area is crystallized at once, it is necessary to use a light absorption layer made of a high melting point material such as tungsten or molybdenum. If the energy intensity is further reduced, it is possible to irradiate a wider range when the same laser oscillator is used. Therefore, lowering the energy intensity means that a larger area can be crystallized in a lump. Even in this case, since the wavelength of the laser light is short, the thickness of the light absorption layer can be reduced, which contributes to the improvement of the throughput. In addition, since the use of the light absorption layer can be reduced, the amount of heat that the light absorption layer has when the precursor film is melted can be reduced. As a result, the amount of heat flowing out to the underlying glass substrate is less, and it becomes possible to minimize the diffusion of contaminants such as boron from the glass substrate to the precursor film and the polycrystalline silicon film after crystallization. .

  Further, if the light absorption layer is formed directly in contact with the precursor film, impurities may be mixed in the precursor film during melting. Since the light absorption layer instantaneously has a temperature close to 2000 ° C., impurities may be mixed into the precursor film. Therefore, it is desirable to form a diffusion preventing layer between the layer serving as the light absorption layer and the precursor film. As the diffusion preventing layer, a silicon nitride film, a silicon oxide film, an oxynitride film, or a laminated structure of these (a silicon nitride film, a silicon oxide film, and an oxynitride film) can be used. By using this diffusion prevention layer, impurities diffused from the light absorption layer into the polycrystalline silicon film are greatly reduced.

  In this way, a high quality polycrystalline silicon film can be formed by irradiating and scanning a precursor film having a light absorption layer made of a high melting point material with a laser beam oscillated from a semiconductor laser. The polycrystalline silicon film thus formed can be used for solar cells, TFTs, and other electronic devices.

  According to the present invention, the following excellent effects can be obtained.

  In the present invention, the non-single crystal silicon film is irradiated with a laser beam using a semiconductor laser as an oscillation source and scanned to melt and crystallize the non-single crystal silicon film to obtain a crystalline silicon film. In a semiconductor laser, laser light having a rectangular cross section is emitted directly from a rectangular laser emission port, so there is no need to greatly change the shape of the laser light.

  According to the present invention, when a laser beam having a semiconductor laser as an oscillation source and having a rectangular cross-sectional shape is used, the energy intensity is uniform, so that it is not necessary to transmit the amount of heat laterally by heat transfer. Therefore, when the cross-sectional shape of the laser beam is rectangular as described above, it is only necessary to irradiate only the laser beam having an energy necessary for melting only the irradiated portion. In addition, it is possible to crystallize a larger area by a single scan by shortening the short axis of the rectangle and lengthening the long axis.

  Further, in the present invention, laser light using a semiconductor laser as an oscillation source is emitted from a semiconductor laser array in which laser units are arranged side by side, and the cross-sectional shape of the laser light is rectangular. The semiconductor laser does not require an external excitation light source like a solid-state laser, and is small in size. Therefore, in order to irradiate a large area, several laser units are arranged side by side to form an elongated beam with a rectangular cross-sectional shape. Thus, it is possible to irradiate a wide area simultaneously with one scanning. Moreover, the handling is also easy. Therefore, by using a semiconductor laser, it is possible to crystallize a large area with high throughput.

  In the present invention, since a semiconductor laser does not require an excitation light source unlike a solid-state laser, the apparatus configuration is easy and no maintenance is required.

  In the present invention, since the light absorption layer instantaneously has a temperature close to 2000 ° C., it is necessary to use a light absorption layer made of a high melting point material such as tungsten or molybdenum. By using this light absorption layer, the energy intensity can be lowered and a wider area can be crystallized in a lump.

  In the present invention, any of silicon oxide, silicon nitride, silicon oxynitride, or a laminated structure of these (silicon oxide, silicon nitride, silicon oxynitride) is used for the diffusion prevention layer. By using such a diffusion prevention layer, impurities diffused from the light absorption layer into the polycrystalline silicon film are greatly reduced.

  In this manner, a high quality polycrystalline silicon film can be formed by irradiating the precursor film having a light absorption layer made of a high melting point material with the laser beam oscillated from the semiconductor laser and scanning. The polycrystalline silicon film thus formed can be used for solar cells, TFTs, and other electronic devices.

  Hereinafter, embodiments of the present invention will be described focusing on examples. In addition, the following Examples show an example of this invention and this invention is not limited to these.

[Example 1]
As shown in FIG. 1, a tungsten film 02 having a thickness of 100 nm is formed as a light absorption layer on a quartz substrate 01 by sputtering, and a silicon nitride film 03 and a silicon oxide film 04 are respectively formed as a diffusion preventing layer on the top thereof by 100 nm. Formed. An amorphous silicon film (non-single crystal silicon film) 05 having a thickness of 50 nm was formed thereon as a precursor film. A plasma CVD method was used to form the amorphous silicon film 05. A monosilane gas of 10 ccm was introduced as a source gas, and 5 W of RF power was introduced into the parallel plate electrode.

  When the amorphous silicon film 05 of the substrate formed as described above is irradiated with a laser beam 30 of an AlGaAs semiconductor laser having a wavelength of 750 nm to 900 nm as shown in FIG. The optical characteristics of the silicon film 05 have changed.

  As the laser beam, a laser beam having a Gaussian distribution with a circular cross-sectional shape, which is transformed into a Gaussian shape by condensing the laser beam oscillated from a laser oscillator on an optical fiber, was used.

  FIG. 2 shows a state in which the amorphous silicon film 05 is melted by the laser beam 30 to be melted silicon 06 and then crystallized to become a crystalline silicon film (crystalline silicon film) 05a.

As a result of analyzing the treated silicon film by a Raman spectroscopic analysis method, it was found that since it had a sharp peak at 520 cm ⁻¹ , it changed to a crystalline silicon film 05a. Furthermore, by optimizing the output and scanning speed of the AlGaAs semiconductor laser, the molten silicon grew in the horizontal direction, and the crystal grains became 1 μm wide and 10 μm or larger in the vertical direction.

[Example 2]
As shown in FIG. 3, a silicon nitride film 08 and a silicon oxide film 09 were formed on a glass substrate 07 with a thickness of 100 nm and a thickness of 50 nm, respectively. A microcrystalline silicon film (non-single-crystal silicon film) 10 was formed as a precursor film to a thickness of 100 nm on the upper portion by plasma CVD. A silicon oxide film 11 having a thickness of 50 nm was formed thereon as a diffusion preventing layer, and then a molybdenum film 12 having a thickness of 50 nm was formed as a light absorption layer.

  Next, as shown in FIG. 4, this substrate was irradiated with a laser beam 30 of a semiconductor laser using AlGaAs as an active layer, which was the same as that used in Example 1.

  FIG. 4 shows a state in which the microcrystalline silicon film 10 is melted by the laser light 30 to be melted silicon 13 and then crystallized to become a crystalline silicon film (crystalline silicon film) 10a.

  Thereafter, when the silicon oxide film (diffusion prevention layer) 11 and the molybdenum film (light absorption layer) 12 are removed by HF rinsing with 5%, the microcrystalline silicon film 10 which is the precursor film is crystallized, and the polycrystalline silicon film 10a. Had changed.

  Also in this case, similarly to Example 1, the crystalline silicon film 10a was laterally grown by optimizing the laser power and the scanning speed. The size of the crystal grains became huge with a width of 1 μm or more and a length of 10 μm or more.

  By using the above method, a structure in which the light absorption layer is removed can be manufactured. For example, this structure is effective when a polycrystalline silicon film for driving a TFT is to be formed.

[Example 3]
FIG. 5 shows the structure of a solar cell as a semiconductor device of Example 3.

  In FIG. 5, after a silicon nitride film 15 and a silicon oxide film 16 were formed on a glass substrate 14 with a thickness of 100 nm and 50 nm, respectively, a tungsten layer 17 was formed as a lower electrode layer with a thickness of 50 nm.

An amorphous silicon film (non-single crystal silicon film) having a thickness of 500 nm (a crystalline silicon film 18 after being crystallized with a laser beam of a semiconductor laser is shown in FIG. 5) is formed thereon as a precursor film. . This amorphous silicon film is mixed with 1 × 10 ¹⁷ cm ⁻³ of phosphorus as a dopant. A 50 nm thick silicon oxide film (not shown) was formed thereon as a diffusion preventing layer. A 50 nm tungsten layer (not shown) was formed thereon as a light absorption layer.

  The precursor film was crystallized by irradiating and scanning the laser beam 30 of a semiconductor laser using AlGaAs similar to the laser used in Example 1 as an active layer. As a result, the amorphous silicon film (not shown) was crystallized by the laser beam of the semiconductor laser, and became a crystalline silicon film (crystalline silicon film) 18.

  Thereafter, the tungsten film (not shown) of the light absorption layer and the silicon oxide film (not shown) of the diffusion prevention layer were removed by HF rinsing.

  After removing all the film above the precursor film and observing the crystallized precursor film (crystalline silicon film 18), it is confirmed that the precursor film is a laterally grown polycrystalline silicon film (crystalline silicon film 18). I understood.

A p-type microcrystalline silicon film 19 doped with boron at a concentration of 1 × 10 ²⁰ cm ⁻³ is formed to a thickness of 100 nm on the polycrystalline silicon film (crystalline silicon film 18), and the ITO film 20 is formed as a transparent conductive film. Further, a takeout metal electrode 21 was formed on a part of the upper portion to form a solar cell structure.

  When the solar cell thus formed was irradiated with 1 SUN pseudo-sunlight and the current-voltage characteristics were measured, the open circuit voltage was 0.58V. According to the method manufactured in Example 3, a device having electrodes on the upper and lower sides of the film can be manufactured.

[Example 4]
In this example, the semiconductor laser was irradiated with laser light as a uniform laser beam having a rectangular cross-sectional shape. A rectangular shape with a uniform cross-sectional shape means that when the short side of the rectangle is the x-axis and the long side is the y-axis, the Gaussian distribution is in the x-direction and the x-coordinate is the same in the y-axis direction. It is a uniform energy intensity with an intensity within ± 10% in width.

  When the precursor film having the light absorption layer produced in Example 1 was irradiated with the laser beam having such a shape, melting and crystallization occurred as in Example 1, and the output and scanning speed were controlled by controlling the output and scanning speed. It was confirmed by SEM (scanning electron microscope) observation that the crystals were crystal grains indicating lateral growth.

  By using the method of Example 4, it is possible to crystallize a wider area than a conventional circular beam light by one irradiation.

  In Examples 1 to 4, an amorphous silicon film and a microcrystalline silicon film are used as the non-single crystal silicon film, but a polycrystalline silicon film having a small grain size is used as the non-single crystal silicon film. You can also.

  In other words, a polycrystalline silicon film having a small grain size is used as the non-single crystal silicon film, and then a laser beam using a semiconductor laser as an oscillation source is irradiated and scanned on the polycrystalline silicon film having a large grain size. A film (crystalline silicon film) can be formed, and such an embodiment is also included in the scope of the present invention.

It is a cross-sectional schematic diagram of the semiconductor device which shows before the laser beam irradiation of the manufacturing method in Example 1 of this invention. It is a cross-sectional schematic diagram of the semiconductor device which shows the laser beam irradiation process of the manufacturing method in Example 1 of this invention. It is a cross-sectional schematic diagram of the semiconductor device which shows before the laser beam irradiation of the manufacturing method in Example 2 of this invention. It is a cross-sectional schematic diagram of the semiconductor device which shows the laser beam irradiation process of the manufacturing method in Example 2 of this invention. It is a completion schematic diagram of the crystalline silicon type semiconductor device in Example 3 of this invention.

Explanation of symbols

01 Quartz substrate 02 Tungsten film (light absorption layer)
03 Silicon nitride film (diffusion prevention layer)
04 Silicon oxide film (diffusion prevention layer)
05 Amorphous silicon film (non-single crystal silicon film)
05a Crystalline silicon film (crystalline silicon film)
06, 13 Melted silicon 07, 14 Glass substrate 08, 15 Silicon nitride film 09, 16 Silicon oxide film 10 Microcrystalline silicon film (non-single crystal silicon film)
10a Crystalline silicon film (crystalline silicon film)
11 Silicon oxide film (diffusion prevention layer)
12 Molybdenum film (light absorption layer)
17 Tungsten film 18 Crystalline silicon film (crystalline silicon film)
19 p-type microcrystalline silicon film 20 ITO film 21 Extraction electrode 30 Laser light

Claims (8)

  The non-single crystal silicon film and the light absorption layer are formed on different surfaces of the diffusion prevention layer, respectively, and heat generated by irradiating and scanning the light absorption layer with a laser beam using a semiconductor laser as an oscillation source, A method for manufacturing a semiconductor device, wherein a non-single crystal silicon film is melted and crystallized to form a crystalline silicon film. In the manufacturing method of the semiconductor device according to claim 1,
Manufacturing of a semiconductor device, wherein the diffusion prevention layer is formed of any one of silicon oxide, silicon nitride, and silicon oxynitride, or a stacked structure of silicon oxide, silicon nitride, and silicon oxynitride. Method. In the manufacturing method of the semiconductor device according to claim 1,
A method of manufacturing a semiconductor device, wherein the light absorption layer is a substance having a melting point higher than that of silicon. In the manufacturing method of the semiconductor device according to claim 3,
A method of manufacturing a semiconductor device, wherein the light absorption layer is tungsten or molybdenum. In the manufacturing method of the semiconductor device in any one of Claims 1-4,
A method of manufacturing a semiconductor device, wherein a wavelength of laser light using the semiconductor laser as an oscillation source is 750 nm to 900 nm. In the manufacturing method of the semiconductor device according to claim 1,
A method of manufacturing a semiconductor device, characterized in that the cross-sectional shape of laser light using the semiconductor laser as an oscillation source is rectangular. The method of manufacturing a semiconductor device according to claim 6.
A method of manufacturing a semiconductor device, characterized in that laser light using the semiconductor laser as an oscillation source is emitted from a semiconductor laser array in which laser units are arranged side by side, and the cross-sectional shape of the laser light is rectangular. In the manufacturing method of the semiconductor device in any one of Claims 1-7,
A method of manufacturing a semiconductor device, wherein the crystalline silicon film has a thickness of 300 nm or less.

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