JP2005235883A5 - - Google Patents

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Publication number
JP2005235883A5
JP2005235883A5 JP2004040848A JP2004040848A JP2005235883A5 JP 2005235883 A5 JP2005235883 A5 JP 2005235883A5 JP 2004040848 A JP2004040848 A JP 2004040848A JP 2004040848 A JP2004040848 A JP 2004040848A JP 2005235883 A5 JP2005235883 A5 JP 2005235883A5
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JP
Japan
Prior art keywords
light
laser
laser beam
target member
generation apparatus
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Application number
JP2004040848A
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English (en)
Japanese (ja)
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JP2005235883A (ja
JP4366206B2 (ja
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Priority to JP2004040848A priority Critical patent/JP4366206B2/ja
Priority claimed from JP2004040848A external-priority patent/JP4366206B2/ja
Publication of JP2005235883A publication Critical patent/JP2005235883A/ja
Publication of JP2005235883A5 publication Critical patent/JP2005235883A5/ja
Application granted granted Critical
Publication of JP4366206B2 publication Critical patent/JP4366206B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004040848A 2004-02-18 2004-02-18 光発生装置 Expired - Fee Related JP4366206B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004040848A JP4366206B2 (ja) 2004-02-18 2004-02-18 光発生装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004040848A JP4366206B2 (ja) 2004-02-18 2004-02-18 光発生装置

Publications (3)

Publication Number Publication Date
JP2005235883A JP2005235883A (ja) 2005-09-02
JP2005235883A5 true JP2005235883A5 (enExample) 2007-04-05
JP4366206B2 JP4366206B2 (ja) 2009-11-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004040848A Expired - Fee Related JP4366206B2 (ja) 2004-02-18 2004-02-18 光発生装置

Country Status (1)

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JP (1) JP4366206B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405417B2 (en) * 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
JP4937590B2 (ja) * 2006-01-25 2012-05-23 株式会社小松製作所 極端紫外光源装置
JP5076078B2 (ja) * 2006-10-06 2012-11-21 ギガフォトン株式会社 極端紫外光源装置
JP5076079B2 (ja) * 2006-10-18 2012-11-21 ギガフォトン株式会社 極端紫外光源装置
US7825390B2 (en) * 2007-02-14 2010-11-02 Asml Netherlands B.V. Apparatus with plasma radiation source and method of forming a beam of radiation and lithographic apparatus
JP5086664B2 (ja) * 2007-03-02 2012-11-28 ギガフォトン株式会社 極端紫外光源装置
US7602472B2 (en) * 2007-06-12 2009-10-13 Asml Netherlands B.V. Contamination prevention system, lithographic apparatus, radiation source, and method for manufacturing a device
US7872245B2 (en) * 2008-03-17 2011-01-18 Cymer, Inc. Systems and methods for target material delivery in a laser produced plasma EUV light source
JP5559562B2 (ja) 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
US9400246B2 (en) * 2011-10-11 2016-07-26 Kla-Tencor Corporation Optical metrology tool equipped with modulated illumination sources
JP6367941B2 (ja) * 2014-07-11 2018-08-01 ギガフォトン株式会社 極端紫外光生成装置

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