JP2005230691A - Treatment liquid discharge apparatus, semiconductor device fabrication apparatus and semiconductor device fabrication method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a treatment liquid discharge apparatus capable of discharging and applying a resist liquid at the same precision as in mass production even if the resist liquid amount is slight, a semiconductor device fabrication apparatus, and a production method of a semiconductor device using these apparatuses. <P>SOLUTION: The treatment liquid discharge apparatus comprising a treatment liquid discharge system 16 provided with a discharge nozzle 13 for discharging a resist liquid, a treatment liquid supply part 10 for supplying the resist liquid to the discharge nozzle 13, and a valve 12 for controlling the discharge of the resist liquid by the discharge nozzle 13 and a control part 15 for controlling the treatment liquid discharge system 16 based on control signals inputted from an externally connected terminal 15a is installed independently. The control signals inputted to the externally connected terminal 15a are received from a semiconductor device fabrication apparatus for mass production and the discharge nozzle 13 is installed in the semiconductor device fabrication apparatus for mass production to discharge and apply the resist liquid. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a processing liquid discharge apparatus, a semiconductor manufacturing apparatus, and a semiconductor device manufacturing method, and more particularly, to a processing liquid discharge apparatus, a semiconductor manufacturing apparatus, and a semiconductor device manufacturing method using these apparatuses that perform prior evaluation of a resist solution. It is related to effective technology.

  For example, a resist coating apparatus that coats a semiconductor wafer with a resist solution is used in a photolithography process during the manufacturing process of a semiconductor device. This resist coating apparatus usually has a plurality of resist supply systems, and can apply resist solutions of different materials. Patent document 1 is mentioned as an example of such a resist coating apparatus.

In Patent Document 1, for example, a resist solution solvent supply unit and a means for switching the flow of the resist solution and the resist solution solvent in the vicinity of the resist supply unit in a pipe for sending out the resist solution from a plurality of resist supply units. A resist coating apparatus having the following is shown. As a result, the resist supply system can be easily cleaned with the resist solution solvent.
JP-A-11-169775

  By the way, as a result of examination of the technique of the resist coating apparatus as described above by the present inventors, the following has been clarified.

  For example, a resist coating apparatus as described in the background art has a plurality of resist supply systems in consideration of a mass production process. In addition, in such a product form, a mechanism for rotating a semiconductor wafer to apply a resist solution, a mechanism for developing a semiconductor wafer subjected to exposure processing, a mechanism for performing heat treatment, etc. In many cases.

  For this reason, the apparatus size is increased, and the piping of the resist supply system from the bottle for storing the resist solution to the nozzle for discharging the resist solution is lengthened, and the capacity of the piping system is increased. Therefore, in practice, in order to accurately discharge the resist solution from the nozzle, it is necessary to store in the bottle at least an amount of the resist solution that satisfies the capacity of the piping system.

  Under such circumstances, the material of the resist solution changes with the advance of technology, and a prior evaluation may be performed using a resist solution for evaluation in order to select a more appropriate resist solution. At this time, a resist solution for evaluation will be obtained. In recent years, the resist solutions used in the prior evaluation are mostly of the state-of-the-art technology such as those for KrF and ArF, and are expensive. Therefore, it can usually be obtained only in a small amount.

  Therefore, since the resist supply system of the resist coating apparatus cannot be used, it is necessary to discharge the resist solution by, for example, dropper discharge or manual operation such as dropping directly from the bottle onto the semiconductor wafer. However, in manual operation, it is difficult to discharge a resist solution onto a semiconductor wafer at the accuracy level of a resist coating apparatus used for mass production, which causes a problem that prior evaluation based on mass production cannot be performed sufficiently. come.

  Accordingly, an object of the present invention is to use a processing liquid discharge apparatus and a semiconductor manufacturing apparatus capable of discharging and applying a resist liquid with the same accuracy as in mass production even with a small amount of resist liquid, and these apparatuses. Another object of the present invention is to provide a method for manufacturing a semiconductor device.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in the present application, the outline of typical ones will be briefly described as follows.

  The processing liquid discharge apparatus according to the present invention includes a discharge nozzle that discharges a processing liquid onto a semiconductor wafer, a processing liquid supply unit that supplies the processing liquid to the discharge nozzle through a pipe from a processing liquid supply source, and a processing liquid on the pipe. A valve provided between the supply unit and the discharge nozzle and configured to control the supply of the processing liquid from the processing liquid supply unit to the discharge nozzle by opening and closing, and the application unit of the main processing liquid discharge device is shared and the main processing liquid It is controlled using the control signal of the discharge device.

  That is, this processing liquid discharge device discharges the processing liquid under the control of the main processing liquid discharge device, and applies the discharged processing liquid by sharing the application part of the main processing liquid discharge device. is there.

  Further, in such a processing liquid discharge apparatus, the length of the pipe is, for example, within 3 m. That is, since this processing liquid discharge device is an independent device having a simple configuration, the length of the pipe can be sufficiently shortened. As a result, even with a small amount of resist solution, it is possible to discharge the resist solution with the same accuracy as a mass production semiconductor manufacturing apparatus by using such a processing solution discharge apparatus.

  Such a processing liquid discharge apparatus is used in connection with a semiconductor manufacturing apparatus including a coating unit that applies the processing liquid discharged onto the semiconductor wafer. That is, the processing liquid discharge apparatus receives a control signal from the semiconductor manufacturing apparatus, and discharges the resist liquid using the processing liquid discharge apparatus by installing the discharge nozzle of the processing liquid discharge apparatus in the semiconductor manufacturing apparatus. It becomes possible to apply the resist solution using the application unit of the semiconductor manufacturing apparatus.

  In addition, a semiconductor manufacturing apparatus according to the present invention includes a discharge nozzle that discharges a processing liquid onto a semiconductor wafer, a processing liquid supply unit that supplies the processing liquid to the discharge nozzle through the pipe from the processing liquid supply source, and a pipe. A plurality of processing liquid discharge systems provided between the processing liquid supply section and the discharge nozzle and having a valve for controlling the supply of the processing liquid from the processing liquid supply section to the discharge nozzle by opening and closing, and a coating for mounting the semiconductor wafer And a control unit that controls the plurality of processing liquid discharge systems, wherein one of the plurality of processing liquid discharge systems has a pipe length of 2/3 or less than the other processing liquid discharge systems, The capacity of the liquid supply source is smaller than the pipe length. That is, this semiconductor manufacturing apparatus can discharge a small amount of resist solution by including a processing liquid discharge system including a short pipe length and a small capacity processing liquid supply source.

  In addition, a semiconductor manufacturing apparatus according to the present invention includes a plurality of processing liquid supply systems that discharge processing liquid onto a semiconductor wafer, a coating unit that applies the processing liquid discharged onto the semiconductor wafer, and each processing liquid supply system. And a second external connection terminal for extracting at least one control signal out of the plurality of control signals. Thus, the processing liquid discharge device can be easily controlled by connecting the second external connection terminal and the processing liquid discharge device.

  Among the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  An independent processing liquid discharge device for discharging a resist solution is provided, and this processing liquid discharge device is used in connection with a semiconductor manufacturing apparatus for mass production. The resist solution can be discharged and applied with the same accuracy.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiment, and the repetitive description thereof will be omitted.

  FIG. 1 is a configuration diagram showing an example of the configuration of a processing liquid ejection apparatus according to an embodiment of the present invention. 1 includes, for example, a processing liquid discharge system 16, a control unit 15, and the like. The processing liquid discharge system 16 includes a processing liquid supply unit 10, a filter 11, a valve 12, and a discharge. It has a nozzle 13 and a pipe 14 for connecting them.

  The processing liquid supply unit 10 has a function of supplying a processing liquid such as a resist liquid to the discharge nozzle 13, and for example, a resist bottle (processing liquid supply source) 10a for storing the resist liquid and a resist liquid for the resist bottle 10a. The pump 10b etc. which are sucked from and supplied to the discharge nozzle 13 are configured. In addition, the processing liquid supply unit 10 may have, for example, a configuration of a pressure / pressure feeding system that supplies the resist liquid to the discharge nozzle 13 by applying pressure to the resist bottle 10a without providing the pump 10b.

  The filter 11 has a function of removing solids and the like contained therein from the resist solution supplied from the processing solution supply unit 10. Note that. This filter 11 is not particularly required if there is no concern about solid matter or the like. The valve 12 has a function of controlling the discharge of the resist solution by the discharge nozzle 13 by opening and closing thereof, a function of returning the resist solution remaining at the tip of the discharge nozzle 13 due to surface tension into the discharge nozzle 13 after the discharge of the resist solution, and the like. have. The discharge nozzle 13 has a function of discharging a resist solution onto the semiconductor wafer under the control of the valve 12 and the like.

  The control unit 15 includes an external connection terminal 15a (first external connection terminal). By inputting a control signal from the terminal 15a, an operation timing such as a drive start timing and a drive end timing of the pump 10b, and opening / closing of the valve 12 are performed. It has a function to control timing and the like. Such a function is realized by, for example, a sequencer. That is, for example, the sequencer may be activated using a control signal input from the external connection terminal 15a as a trigger, and the pump 10b and the valve 12 may be controlled according to the processing of the sequencer.

  And the length of the piping 14 from the resist bottle 10a to the discharge nozzle 13 is 3 m or less, for example, More preferably, it is the length of 1 m or less. Also, the capacity of the resist bottle 10a is smaller than the length of the pipe 14. Thus, for example, if the length of the pipe 14 is 1 m, the capacity of the pipe 14 is about 30 cc, so even a small amount of resist solution such as 100 cc can be accurately discharged.

  In addition, since the processing liquid discharge device of FIG. 1 has a simple configuration using only the minimum necessary parts, the capacity of the piping system including the parts and piping is reduced, and the resist liquid is contaminated. The possibility of being reduced. That is, in some cases, the filter can be removed, and a simpler configuration can be achieved. In addition, by using a simple configuration as much as possible, it is possible to realize at a low cost.

  On the other hand, a processing liquid discharge system included in a general resist coating and developing apparatus has a configuration as shown in FIG. FIG. 2 is a configuration diagram showing an example of the configuration of a conventional processing liquid discharge system studied as a premise of the present invention. The processing liquid discharge system 26 shown in FIG. 2 includes a remaining amount detection unit 20c that detects the remaining amount of the resist solution between the resist bottle 20a and the pump 20b as compared with the configuration of FIG. The length of the pipe 24 from the bottle 20a to the discharge nozzle 23 is about 10 m. Accordingly, the capacity of the pipe 24 generally exceeds 500 cc, and it is difficult to discharge a small amount of resist solution such as 100 cc.

  Incidentally, the processing liquid discharge apparatus as shown in FIG. 1 is used in connection with a semiconductor manufacturing apparatus such as a resist coating and developing apparatus (main processing liquid discharge apparatus) in actual use. In addition, this processing liquid discharge apparatus may be used by being incorporated in a semiconductor manufacturing apparatus. First, in the case where the processing liquid discharging apparatus as shown in FIG. 1 is incorporated in the semiconductor manufacturing apparatus, the configuration of the semiconductor manufacturing apparatus will be described below.

  FIG. 3 is a schematic view showing an example of the outer shape of the semiconductor manufacturing apparatus according to the embodiment of the present invention. The semiconductor manufacturing apparatus shown in FIG. 3 includes, for example, a resist coating and developing apparatus 30, an exposure apparatus 31, and an interface unit 32 that connects these. The resist coating / developing apparatus 30 has a function of coating a resist solution on a semiconductor wafer and a function of developing a resist after exposure processing. Although the structure is not shown in FIG. 3, for example, a plurality of processing liquid discharge systems that can supply a plurality of resist liquids and discharge any one of the resist liquids onto the semiconductor wafer, and a semiconductor wafer on the semiconductor wafer. It includes a spin coater unit (application unit) that spin-coats the discharged resist solution, a heat processing unit that performs pre-baking and post-baking, a development processing unit that develops the resist solution applied on the semiconductor wafer, and the like.

  The exposure device 31 receives the semiconductor wafer on which the resist solution is applied and prebaked in the resist coating and developing device 30 via the interface unit 32, and performs an exposure process on the resist on the semiconductor wafer. Further, the semiconductor wafer after this exposure processing is returned to the resist coating / developing apparatus 30 via the interface unit 32, and the resist coating / developing apparatus 30 performs development processing, post-baking, and the like.

  Here, the configuration of the plurality of processing liquid discharge systems and the spin coater unit (coating unit) in the resist coating and developing apparatus 30 is, for example, as shown in FIG. 4 is a block diagram showing an example of the configuration of the processing liquid discharge system and the spin coater in the resist coating and developing apparatus of FIG. 3 in the semiconductor manufacturing apparatus according to the embodiment of the present invention. In FIG. 4, for example, the two processing liquid discharge systems 16 and 26 including the processing liquid discharge system 16 shown in FIG. 1 and the processing liquid discharge system 26 shown in FIG. 2, one spin coater unit 42, A control unit 45 that controls the two processing liquid discharge systems 16 and 26 is shown. The piping length of the processing liquid discharge system 16 is shorter than the piping length of the processing liquid discharge system 26, for example, 2/3 or less.

  Note that the number of processing liquid discharge systems may be two or more, and a plurality of spin coater units may exist. That is, when there are two or more processing liquid discharge systems, at least one of the processing liquid discharge systems may be the processing liquid discharge system 16 shown in FIG.

  The control unit 45 uses, for example, a generally known function of the resist coating / developing apparatus 30, and the user selects one of the processing liquid discharge systems, so that the selected pump and valve are selected. Output a control signal. Similarly, when the user selects one of the processing liquid discharge systems, the selected discharge nozzle is controlled by the resist coating and developing apparatus 30 to be positioned at the center position of the semiconductor wafer 46 of the spin coater 42. Move up.

  Here, the configuration related to the discharge nozzle is, for example, as shown in FIG. FIG. 5 is a plan view showing an example of a configuration related to the discharge nozzle of the processing liquid discharge system in the semiconductor manufacturing apparatus according to the embodiment of the present invention. In FIG. 5, the semiconductor wafer 46 installed in the spin coater unit 42 in FIG. 4, six discharge nozzles 50a to 50f respectively corresponding to, for example, six processing liquid discharge systems, and the discharge nozzles 50a to 50f are stored. A discharge nozzle storage unit 51 to perform, a transfer robot 52 that can select any one of the six discharge nozzles 50 a to 50 f in the discharge nozzle storage unit 51, and transfer it to the center position of the semiconductor wafer 46. It is shown. In FIG. 5, the case where the discharge nozzle 51b is selected is taken as an example, and the discharge nozzle 51b is conveyed to the center position of the semiconductor wafer.

  Further, when a resist solution is applied onto a semiconductor wafer by a semiconductor manufacturing apparatus having the configuration shown in FIG. 4, for example, the processing operations shown in the following (1) and (2) are performed.

  (1) A processing sequence is set using a generally known function of the resist coating and developing apparatus 30. In this processing sequence, for example, setting of a time transition such as the number of rotations, rotation time, and acceleration of the semiconductor wafer in the spin coater unit 42, and a resist solution discharge start instruction and a discharge end instruction in accordance with the time transition are set. Set and select the processing liquid discharge system to be used. Here, it is assumed that the processing liquid discharge system 16 of FIG. 4 is selected.

  (2) Based on the set processing sequence, the semiconductor wafer 46 is rotated, a resist solution discharge start command and a discharge end command are issued, and the like. When the discharge start command is issued, the control unit 45 transmits a drive start signal and an open signal to the pump 10b and the valve 12, for example. As a result, the resist solution is discharged from the discharge nozzle 13 onto the semiconductor wafer 46, and the resist solution is applied onto the semiconductor wafer 46 by the rotation of the spin coater 42. On the other hand, when the discharge end command is issued, the control unit 45 transmits a drive end signal and a close signal to the pump 10b and the valve 12, for example. Thereby, the discharge of the resist solution by the discharge nozzle 13 is stopped.

  Next, as described above, in the case where the processing liquid discharge apparatus as shown in FIG. 1 is connected to the semiconductor manufacturing apparatus, the configuration of the semiconductor manufacturing apparatus will be described below.

  FIG. 6 is a schematic view showing an example of an outer shape different from that in FIG. 3 in the semiconductor manufacturing apparatus according to the embodiment of the present invention. The semiconductor manufacturing apparatus shown in FIG. 6 includes, for example, a resist coating / developing apparatus 60, an exposure apparatus 31, and an interface unit 32 for connecting them, as in FIG. 6 differs from the outer shape of FIG. 3 in the resist coating and developing apparatus 60. In FIG. 6, an external connector (second external connection terminal) 61 is provided on the resist coating and developing apparatus 60. is there.

  The external connector 61 is connected to a control unit that controls a processing liquid discharge system in the resist coating and developing apparatus 60, as shown in FIG. FIG. 7 is a block diagram showing an example of the configuration of the processing liquid discharge system and the spin coater in the resist coating and developing apparatus of FIG. 6 in the semiconductor manufacturing apparatus according to the embodiment of the present invention. In FIG. 7, a general processing liquid discharge system 26 and a control unit 70 as shown in FIG. 2, an external connector 61 drawn from the control unit 70, and a spin coater unit 42 are shown. Note that a plurality of the treatment liquid discharge system 26 and the spin coater unit 42 may exist.

  The control unit 70 can output such a control signal to the external connector 61 as well as outputting a control signal to the pump 20 b and the valve 22 of the processing liquid discharge system 26. That is, in the example of FIG. 7, the control unit 70 behaves as if there are two processing liquid discharge systems. For example, when the user selects the first system, a control signal is sent to the processing liquid discharge system 26. When the second system is selected, a control signal is output to the external connector 61.

  Therefore, when using the processing liquid discharge apparatus, the external connector 61 and the external connection terminal 15a of the processing liquid discharge apparatus shown in FIG. 1 are connected, and the resist coating and developing apparatus 60 has the discharge nozzle 13 of FIG. What is necessary is just to install in the discharge nozzle storage part 51 as shown in FIG. As a result, the processing liquid ejection device and the spin coater unit 42 in the resist coating and developing apparatus 60 are used in the same manner as the normal coating process is performed using the processing liquid ejection system 26 and the spin coater unit 42 in the resist coating and developing apparatus 60. The coating process can be performed.

  In this case, the discharge nozzle 13 of the processing liquid discharge device connected to the resist coating and developing apparatus 60 has the same specifications as the discharge nozzle 23 used in the processing liquid discharge system 26 of the resist coating and developing apparatus 60. Further, the pump 10b and the valve 12 of the processing liquid discharge apparatus are more preferably set to the same specifications as those used in the processing liquid discharge system 26 of the resist coating and developing apparatus 60. As a result, it is possible to apply the resist liquid using the processing liquid discharge apparatus with specifications closer to the specifications of the processing liquid discharge system 26 of the resist coating and developing apparatus 60 used during mass production. That is, the accuracy of evaluation of the resist solution can be increased.

  By the way, the control signal output from the external connector 61 may be a signal for individually controlling the pump 10b and the valve 12 of the processing liquid discharge device of FIG. 1 or a signal for requesting the start of discharge. Conceivable. In the case of a signal requesting the start of discharge, a sequencer or the like is mounted on the control unit 15 as described in FIG. 1, and the sequencer is operated using this discharge start request signal as a trigger. The drive start / end signal and the open / close signal may be output to the pump 10b and the valve 12, respectively. On the other hand, if the signal is for individually controlling the pump 10b and the valve 12, the controller 15 does not need to be provided with a sequencer in particular.

  However, more preferably, the control signal output from the former external connector 61 should be a signal for requesting the start of ejection. As a result, the specifications of the control signal can be easily unified, and the versatility is enhanced because the processing liquid discharge apparatus and the resist coating and developing apparatus connected thereto can be widely combined. In addition, the independence of the processing liquid discharge device can be enhanced. That is, for example, the processing liquid discharge device can discharge the processing liquid only by inputting a discharge start request signal to the processing liquid discharge device. It can be done independently. In addition, since signals for individually controlling the pumps and valves may be slightly different depending on the pipe length, it is desirable that appropriate timing can be set by a sequencer in the processing liquid discharge apparatus.

  As described above, by using a semiconductor manufacturing apparatus in which a processing liquid discharging apparatus is incorporated, or by using the processing liquid discharging apparatus connected to the semiconductor manufacturing apparatus, even if the resist liquid is a small amount such as 100 cc, mass production is possible. It is possible to discharge and apply the resist solution with the same accuracy as in the case of using a conventional semiconductor manufacturing apparatus. Further, when the processing liquid discharge apparatus is used connected to the semiconductor manufacturing apparatus, it is not necessary to provide an installation space for the processing liquid discharge apparatus in the semiconductor manufacturing apparatus, so that the apparatus capacity does not increase. Furthermore, as described with reference to FIGS. 6 and 7, the semiconductor manufacturing apparatus to be connected only needs to add an external connector, so that it can be easily modified from the existing semiconductor manufacturing apparatus.

  Then, by using the processing liquid discharge apparatus and the semiconductor manufacturing apparatus as described above, it is possible to accurately evaluate the resist solution for the prior evaluation, and to efficiently start mass production based on the evaluation result. Become. That is, for example, a manufacturing flow as shown in FIG. 8 may be performed. FIG. 8 is a flowchart showing an example of the manufacturing flow in the method of manufacturing a semiconductor device according to the embodiment of the present invention. The manufacturing flow shown in FIG. 8 is performed as follows, for example.

  In step S801, the processing liquid discharge apparatus is connected to the resist coating and developing apparatus. That is, the external connection terminal 15a of the processing liquid discharge apparatus is connected to the external connector 61 of the resist coating and developing apparatus, and the discharge nozzle 13 of the processing liquid discharging apparatus is installed in the discharge nozzle storage section 51 of the resist coating and developing apparatus. Then, the process proceeds to S802.

  In S <b> 802, the resist solution is discharged and applied onto the semiconductor wafer 46 while the timing conditions of the pump 10 b and the valve 12 of the processing liquid discharge device, the rotation conditions in the spin coater unit 42 of the resist coating and developing device, and the like are established. Then, the process proceeds to S803.

  In step S803, the applied resist solution is evaluated while performing exposure processing, development processing, and the like as necessary. If there is a problem in the evaluation result, the process proceeds to S802, and if there is no problem, the process proceeds to S804.

  In S804, the mass production specifications of the resist coating and developing apparatus are examined, reflecting the conditions established in S802. That is, in the processing liquid discharge apparatus, the resist liquid can be evaluated using the discharge nozzle and the spin coater unit having the same specifications as those used in mass production, and in some cases using the same specification pump and valve. Therefore, mass production specifications can be easily derived. Then, the process proceeds to S805.

  In step S805, mass production is performed according to mass production specifications using a resist coating and developing apparatus.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, in the description so far, the resist solution has been described as an example of the processing solution.

  INDUSTRIAL APPLICABILITY The processing liquid discharge apparatus, semiconductor manufacturing apparatus, and semiconductor device manufacturing method of the present invention are usefully applied to production lines having a photolithography process for semiconductor devices, prototype / research lines, and manufacturing apparatus manufacturers. Furthermore, the present invention is not limited to semiconductor devices and can be similarly applied to printed circuit board production processes.

1 is a configuration diagram showing an example of the configuration of a processing liquid ejection apparatus according to an embodiment of the present invention. In the conventional process liquid discharge system examined as a premise of the present invention, it is a lineblock diagram showing an example of the composition. 1 is a schematic view showing an example of an outer shape of a semiconductor manufacturing apparatus according to an embodiment of the present invention. FIG. 4 is a configuration diagram showing an example of a configuration of a processing liquid discharge system and a spin coater unit in the resist coating and developing apparatus of FIG. 3 in a semiconductor manufacturing apparatus according to an embodiment of the present invention. In the semiconductor manufacturing apparatus by one embodiment of this invention, it is a top view which shows an example of the structure regarding the discharge nozzle of a process liquid discharge system. FIG. 4 is a schematic view showing an example of an outer shape different from that in FIG. 3 in the semiconductor manufacturing apparatus according to the embodiment of the present invention. FIG. 7 is a configuration diagram showing an example of a configuration of a processing liquid discharge system and a spin coater unit in the resist coating and developing apparatus of FIG. 6 in a semiconductor manufacturing apparatus according to an embodiment of the present invention. In the manufacturing method of the semiconductor device by one embodiment of the invention, it is a flow figure showing an example of the manufacturing flow.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Process liquid supply part 10a, 20a Resist bottle 10b, 20b Pump 11,21 Filter 12,22 Valve 13,23,50a-50f Discharge nozzle 14,24 Piping 15,25,45,70 Control part 15a External connection terminal 16, 26 Processing liquid discharge system 30, 60 Resist coating and developing apparatus 31 Exposure apparatus 32 Interface section 42 Spin coater section 46 Semiconductor wafer 51 Discharge nozzle storage section 52 Transfer robot 61 External connector

Claims (10)

A discharge nozzle for discharging a processing liquid onto a semiconductor wafer;
A processing liquid supply unit that supplies the processing liquid to the discharge nozzle through a pipe from a processing liquid supply source;
A valve that is provided between the processing liquid supply unit and the discharge nozzle on the pipe and controls supply of the processing liquid from the processing liquid supply unit to the discharge nozzle by opening and closing;
A processing liquid discharge apparatus, wherein the application section of the main processing liquid discharge apparatus is shared and controlled using a control signal of the main processing liquid discharge apparatus. The processing liquid discharge apparatus according to claim 1,
The length of the said piping is 3 m or less, The processing liquid discharge apparatus characterized by the above-mentioned. In the processing liquid discharge device according to claim 1 or 2,
The processing liquid discharge apparatus according to claim 1, wherein the processing liquid is a resist liquid. In the processing liquid ejection device according to any one of claims 1 to 3,
The processing liquid discharge apparatus is used in connection with a semiconductor manufacturing apparatus having a coating unit that applies the processing liquid discharged onto the semiconductor wafer, whereby the processing liquid is applied onto the semiconductor wafer. A processing liquid discharge apparatus. A coating section for placing a semiconductor wafer;
A discharge nozzle that discharges a processing liquid onto the semiconductor wafer; a processing liquid supply unit that supplies the processing liquid to the discharge nozzle through a pipe from a processing liquid supply source; and the processing liquid supply part on the pipe; A plurality of processing liquid discharge systems provided between the discharge nozzles and having a valve for controlling supply of the processing liquid from the processing liquid supply unit to the discharge nozzle by opening and closing;
A controller for controlling the plurality of processing liquid discharge systems,
One of the plurality of processing liquid discharge systems has a length of the pipe of 2/3 or less than the other processing liquid discharge systems, and the capacity of the processing liquid supply source is smaller than the pipe length. A semiconductor manufacturing apparatus. A semiconductor manufacturing apparatus comprising a plurality of processing liquid discharge systems for discharging a processing liquid onto a semiconductor wafer, and an application unit for applying the processing liquid discharged onto the semiconductor wafer,
4. The semiconductor manufacturing apparatus according to claim 1, wherein at least one of the plurality of processing liquid discharge systems is the processing liquid discharge apparatus according to claim 1. A plurality of processing liquid discharge systems for discharging a processing liquid onto a semiconductor wafer, a coating unit for applying the processing liquid discharged onto the semiconductor wafer, and a plurality of control signals capable of controlling the respective processing liquid discharge systems A semiconductor manufacturing apparatus comprising:
2. A semiconductor manufacturing apparatus, comprising: a second external connection terminal for extracting at least one control signal of the plurality of control signals. The semiconductor manufacturing apparatus according to claim 7,
The semiconductor manufacturing apparatus according to claim 1, wherein the control signal drawn to the second external connection terminal is a signal requesting the start of discharge of the processing liquid. The semiconductor manufacturing apparatus according to claim 7 or 8,
The semiconductor manufacturing apparatus according to claim 1, wherein the second external connection terminal is connected to the processing liquid discharge apparatus according to claim 1. A step of evaluating the processing liquid using the processing liquid discharge apparatus and the semiconductor manufacturing apparatus according to claim 4;
And a step of mass-producing the semiconductor device using the semiconductor manufacturing apparatus, reflecting the evaluation result and the evaluation condition of the processing solution.

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