JP2005229131A - Application and development apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To facilitate work operations from substrate processing to inspection, to reduce the time needed for the work operations, and to perform inspection, without reversing the transport flow of substrates. <P>SOLUTION: This apparatus is composed of a cassette station, including a placing section where substrate cassettes containing multiple cassettes are placed, and delivery means that delivers substrates; application unit that applies resist liquid to substrates that have been transferred from the cassette station; treatment station including a development unit that provides developer solution to substrates after exposure; inspection section that inspects the status of the substrates after development processing, such as measurement of the development line width. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a coating and developing apparatus that performs a coating process and a developing process of a resist solution on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display and inspects a state after the developing process.

  In the photolithography technique in the manufacturing process of a semiconductor device, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as a wafer), the applied resist is exposed to a predetermined pattern, and further developed to obtain a predetermined pattern. A resist film is formed. Such a series of processes is performed by a system in which an exposure apparatus is connected to a coating / developing apparatus.

  FIG. 10 is a plan view showing a conventional example of such an apparatus. A cassette C containing 25 substrates, for example, semiconductor wafers W, is carried into the cassette stage 1 of the cassette station A1. A processing station A2 is connected to the cassette station A1, and an exposure apparatus (not shown) is connected to the processing station A2 via an interface station A3.

  The wafer W in the cassette C on the cassette stage 1 is taken out by the delivery arm 11 and sent to the coating unit 13 through the delivery unit of the shelf unit 12 where the resist is applied. Thereafter, the wafer W is transported and exposed through the path of the wafer transport means 14 → the transfer unit of the shelf unit 15 → interface station A3 → exposure apparatus. The wafer W after exposure is transferred to the processing station A2 through the reverse path, developed by a developing unit (not shown) provided at the lower stage of the coating unit 13, and then transferred from the wafer transfer means 14 to the shelf unit 12. → It is conveyed by the path of cassette C.

  Each shelf of the shelf units 12 and 15 is configured as a heating unit, a cooling unit, a transfer unit for the wafer W, a hydrophobization processing unit, and the like. In order to perform resist coating and the like at this temperature, the shelf units 12 and 15 perform heat treatment and cooling treatment in this order. Reference numeral 16 denotes a transfer arm for transferring the wafer W between the processing station A2 and the exposure apparatus.

  By the way, the wafer W after development has been conventionally inspected for surface scratches and coating unevenness by an operator's visual inspection. However, there are large variations among operators for evaluation, and line width and film thickness inspection, resist pattern Automatic inspection equipment that can automatically perform these inspections recently because it is necessary to perform overlay inspection of the upper layer part and lower layer part and inspection of the presence or absence of foreign matter at the time of applying the resist solution. Tend to perform the above-described inspection.

  This automatic inspection apparatus is an independent apparatus called a stand-alone type configured by combining a plurality of inspection apparatuses, and is installed separately from the coating / developing apparatus described above. For this reason, the wafer W that has been developed by the coating / developing apparatus is transported to an automatic inspection apparatus, where a predetermined inspection is performed.

  However, if the automatic inspection apparatus is installed separately from the coating / developing apparatus as described above, a separate operator for confirming the operation of the automatic inspection apparatus is required. Further, since the wafer W has to be transferred between the coating / developing apparatus and the automatic inspection apparatus, the transfer operation is troublesome, and it becomes a considerable problem when 100% inspection of the wafer W is required. In addition, since it takes time to carry, it is difficult to inspect the state of the development processing in real time, and there is a problem that new equipment is required to reduce particles in an environment where the automatic inspection apparatus is placed.

  For this reason, the present inventors are considering incorporating an automatic inspection apparatus into the coating / developing apparatus described above. At this time, if an attempt is made to utilize the current layout of the coating / developing apparatus, it is conceivable to connect the automatic inspection apparatus 17 next to the cassette station A1, as shown by a broken line in FIG. Since the automatic inspection apparatus 17 protrudes to the side rather than the processing station A2 and in some cases, the exposure apparatus is disadvantageous in terms of layout. In some cases, it is necessary to perform inspection not only after development but also after application of a resist solution, and a configuration that can flexibly respond to user requests is desired.

  The present invention has been made under such circumstances, and an object of the present invention is from substrate processing to inspection by connecting an inspection station having an inspection unit to the processing station to constitute a coating and developing apparatus. An object of the present invention is to provide a coating and developing apparatus capable of simplifying work and shortening time.

The coating and developing apparatus of the present invention is a coating and developing apparatus that performs a coating process of a resist solution on a substrate and supplies the developing solution to the substrate after being exposed by the exposure apparatus to perform the developing process.
A cassette station including a placement unit for placing a substrate cassette containing a plurality of substrates, and delivery means for delivering the substrate to the substrate cassette placed on the placement unit;
An application unit for applying a resist solution to a substrate conveyed from the cassette station, a developing unit for supplying a developing solution to the substrate after exposure, a heating unit for heating the substrate, and the substrate A cooling station for cooling, and a processing station comprising:
An inspection section provided between the cassette station and the processing station for inspecting the substrate after the development processing,
The substrate developed at the processing station is carried into an inspection section, and the substrate after the inspection is transported to a cassette station.

As a specific configuration example of the present invention,
A structure provided between the cassette station and the processing station, and provided with a substrate transfer means for transferring the substrate developed at the processing station to the inspection unit;
A substrate transfer section provided between the cassette station and the processing station, and a substrate transfer means for transferring the substrate between the substrate transfer section and the inspection section, and the substrate after the inspection is transferred to the substrate A configuration in which the transfer means of the cassette station receives the substrate of the substrate transfer section after being transferred to the substrate transfer section by the means;
A configuration in which an interface station for connecting to the exposure apparatus is connected to the processing station;
The interface station is connected to the processing station on the opposite side of the cassette station;
And so on.

  According to another aspect of the present invention, there is provided a station including the inspection unit and a substrate transport unit for delivering a substrate developed at the processing station to the inspection unit. It may be configured to be connected in a direction substantially perpendicular to the arrangement direction of the cassettes. In this case, the station may be configured to be able to contact and separate from the cassette station and / or the processing station. Furthermore, the inspection unit may be configured such that a storage unit for equipment used in the processing station is stacked. In this case, the equipment is a chemical supply system or electrical equipment. Furthermore, the inspection after the development process includes the development line width measurement, the inspection of the upper layer resist pattern and the lower resist pattern overlap, the development defect inspection after the development process, the development unevenness inspection and the unexamined state. Examples include inspection of development sites.

Another invention is a coating and developing apparatus that performs a coating process of a resist solution on a substrate and supplies the developing solution to the substrate after being exposed by an exposure apparatus to perform the developing process.
A cassette station including a placement unit for placing a substrate cassette containing a plurality of substrates, and delivery means for delivering the substrate to the substrate cassette placed on the placement unit;
An application unit for applying a resist solution to a substrate conveyed from the cassette station, a heating unit for heating the substrate, a cooling unit for cooling the substrate, and the application unit, the heating unit, and the cooling unit. A first processing station including substrate transport means for transporting the substrate between,
A developing unit for supplying a developing solution to the substrate after exposure conveyed from the cassette station via the first processing station and the exposure apparatus, a heating unit for heating the substrate, and cooling the substrate And a substrate transfer means for transferring the substrate between the developing unit, the heating unit and the cooling unit, and connected to the opposite side of the cassette station with respect to the first processing station. A second processing station;
And an inspection unit provided between the first processing station and the second processing station for inspecting the substrate after the development processing. In this invention, between the first processing station and the second processing station, in addition to the inspection unit for inspecting the state after the development processing on the substrate, the state after the resist solution coating processing is performed. You may make it provide further the test | inspection part to test | inspect.

The present invention provides a processing unit including a coating unit that performs a resist coating process on a substrate and a developing unit that performs a developing process on the substrate after exposure, and a cassette station. Since the inspection unit for inspecting the state of the substrate is provided, the work from the substrate processing to the inspection after the development processing can be simplified and the time can be shortened, and the substrate transport flow can be reversed. Inspection can be performed without any problem.
In another aspect of the invention, between the first processing station for applying the resist to the substrate and the second processing station for performing the development processing on the exposed substrate, Since the inspection unit for inspecting the state of the substrate is provided, the work from the substrate processing to the inspection after the development processing can be simplified and the time can be shortened, and the substrate transport flow can be reversed. Inspection can be performed without any problem.

  Hereinafter, embodiments of the coating and developing apparatus according to the present invention will be described. FIG. 1 is a perspective view showing the inside of this embodiment in perspective, FIG. 2 is a schematic plan view, in which S1 is a cassette station, and S2 is a predetermined inspection for a wafer W. An inspection station, S3 is a processing station for performing substrate processing such as resist coating processing and development processing on the wafer W, S4 is an interface station, and S5 is an exposure apparatus.

  The cassette station S1 is a cassette stage that constitutes a placement portion on which a wafer cassette (hereinafter referred to as a “cassette”) 22 that constitutes, for example, four substrate cassettes containing a plurality of substrates, eg, 25 wafers W, is placed. 21, a cassette 22 on the cassette stage 21, and a transfer arm 23 serving as a transfer means for transferring the wafer W between the transfer unit 33 of the inspection station S 2 described later. Yes. The delivery arm 23 is configured to be movable up and down, movable in the X and Y directions, and rotatable about the vertical axis.

  The inspection station S2 is connected to the cassette station S1 in a direction substantially orthogonal to the cassette arrangement direction of the cassette station S1. The station S2 inspects the processing state of a plurality of substrates as shown in FIGS. 2, 3 (perspective view of the inspection station S2) and FIG. 4 (sectional view of the inspection station S2 as viewed from the processing station S3 side). An inspection device that forms an inspection unit for performing, for example, two film thickness inspection devices 31 (31A, 31B) and, for example, two defect inspection devices 32 (32A, 32B), for example, one transfer unit 33, and A chemical unit C forming one storage unit, an electric unit E forming one storage unit, and, for example, one substrate transport means MA1, are provided, for example, after resist coating processing and development processing. The wafer W is inspected for the processing state of a predetermined substrate such as the thickness of the resist film, the development line width, the presence or absence of scratches on the resist film, uneven coating of the resist solution, and development defects after the development processing. Is constructed sea urchin.

  An example of the layout of such an inspection station S2 will be described. On the back side of the delivery arm 23, for example, when viewed from the cassette station S1, on the right side, for example, a plurality of inspection devices, here two A first inspection unit U1 including film thickness inspection apparatuses 31A and 31B is provided. The inspection unit U1 includes a transfer unit 33 between, for example, two film thickness inspection apparatuses 31A and 31B, and a chemical unit C is assigned to the lower side of the inspection unit U1.

  The film thickness inspection apparatus 31 is an apparatus that optically inspects the film thickness of a resist film coated on a base film on a substrate, such as an oxide film or polysilicon, for example, by optical interference as described later. is there. The transfer unit 33 includes a transfer table for transferring the wafer W between the transfer arm 23 of the cassette station S1 and the substrate transfer means MA1. The wafer W is transferred to the transfer table by cooperation between the transfer arm 23 and the substrate transfer means MA1 (not shown).

  The chemical unit C accommodates a member used in a coating unit or the like, which will be described later, such as a chemical solution supply system. For example, a storage tank for a solvent or a resist solution, and various valves such as an opening / closing valve for the storage tank. A filter, a valve drive unit, a discharge nozzle drive system, and the like are housed.

  Further, for example, a second inspection unit U2 provided with a plurality of inspection devices, here two defect inspection devices 32A and 32B, is provided on the left side as viewed from the cassette station S1, and this inspection unit U2 is provided. An electric unit E is assigned to the lower side of the.

  For example, as described later, the defect inspection apparatus 32 is configured to detect scratches on the surface of the resist film by imaging with a CCD camera, the degree of overlap between the resist pattern on the upper layer part and the resist pattern on the lower layer part, and the presence or absence of foreign matter mixed during the application of the resist solution. This is an apparatus for inspecting uneven application of a resist solution, development defects after development processing, and the like. The electric unit E includes members used for the film thickness inspection device 31, the defect inspection device 32, the substrate transport means MA1, a coating unit and a development unit described later, such as a power supply unit of these drive systems, and power control thereof. A controller for performing the above and the like, and electrical equipment such as a switchboard for distributing power to these are housed.

  Here, an example of the defect inspection apparatus 32 will be described with reference to FIG. 5. For example, a housing 100 having a transfer port for the wafer W, and a wafer W that is provided in the housing 100 and supports the wafer W horizontally. A rotary mounting table 110 configured to be able to adjust the image, a CCD camera 120 that images the surface of the wafer W on the rotary mounting table 110 and is movable in the X, Y, and Z directions, and an illumination unit 130. And an inspection is performed by analyzing an image of the wafer W obtained by the CCD camera 120 by a personal computer or the like which is a data processing unit (not shown). The CCD camera 120 may be fixed, and the wafer W mounting table 110 side may move in the X, Y, and Z directions.

  Further, the film thickness inspection apparatus 31 described above is provided with a film thickness probe 140 including a light emitting portion and a light receiving portion, which are indicated by dotted lines in the figure, on the side of the CCD camera 120, for example, and the wafer is irradiated with light to reflect the reflectance. And the film thickness is detected by analyzing it with a computer.

  Between the first and second inspection units U1 and U2, for example, a wafer W is transferred between each part of the inspection units U1 and U2 and a transfer unit 46 of a processing station S3 described later. There is provided a substrate transport means MA1 configured to be movable up and down, movable left and right, front and rear, and rotatable about a vertical axis. However, the substrate transport means MA1 is omitted in FIG. 1 for convenience.

  In this example, the example in which the inspection station S2 includes the chemical unit C and the electric unit E has been described. However, it is not always necessary to include both the chemical unit C and the electric unit E. One of them may be provided, or only the inspection unit such as the film thickness inspection device 31 or the defect inspection device 32 may be arranged in the inspection station S2. In addition, the number of inspection units arranged in the inspection station S2 is not limited to the above example, and may be one, or a plurality of inspection units may be provided over three or four stages. Furthermore, regarding the types of inspection units, only the film thickness inspection device 31 or the defect inspection device 32 may be provided, or other inspection devices may be provided in combination.

  Furthermore, this inspection station S2 is configured independently. That is, for example, as shown in FIGS. 3 and 4, the station S2 is partitioned from the other space by the wall 34, and the transfer section of the inspection station S2 on the wall 34 adjacent to the cassette station S1 and the processing station S3. In the position corresponding to 33, a transfer port 35 for the transfer arm 23 to transfer the wafer W to the transfer unit 33 is formed, and the processing of the wall 34 adjacent to the cassette station S1 and the processing station S3 is performed. At positions corresponding to the transfer unit 46 of the station S3, transfer ports (not shown) for the substrate transfer means MA1 to transfer the wafer W to the transfer unit 46 are formed.

  In the inspection station S2 thus partitioned by the wall portion 34, for example, as shown in FIG. 4, a filter unit F is provided so as to cover the upper side, and is recovered from the lower side of the chemical unit C, the electric unit E, and the like. The air is exhausted to the factory exhaust system, while part of the air is introduced into the filter device 36 that forms the adjustment unit, and the air that has been cleaned by the filter device 36 and adjusted to a predetermined temperature and humidity is It is blown out as a down flow into each part through the filter unit F. The filter unit F includes, for example, a filter for cleaning air, a suction fan, and the like, and the filter device sends out an impurity removing unit for removing impurities, a heating mechanism and a humidifying mechanism, and air. It has a sending part. Further, it is conceivable that air having a predetermined temperature and humidity adjusted is supplied to each inspection unit without providing the air circulating means described above, and clean room air is supplied to the cassette station S1.

  Further, the inspection station S2 includes a line L that the first and second inspection units U1 and U2 and the substrate transport unit MA1 divide the X direction of the inspection station S2 indicated by a one-dot chain line in FIG. Are arranged symmetrically in the X direction in the figure. That is, even when the inspection station S2 is rotated halfway and the second inspection unit U2 is positioned on the right side when viewed from the cassette station S1, the transfer arm 23 of the cassette station S2 is transferred via the transfer port 35. The substrate transport means MA1 of the inspection station S1 can access the shelf unit R1 of the processing station S3 via a delivery port (not shown).

  The processing station S3 is connected to the inspection station S2 in a direction substantially perpendicular to the cassette arrangement direction of the cassette station S1. For example, a developing unit 41 (41A, 41B) that forms two substrate processing units, a coating unit 42 (42A, 42B) that forms two substrate processing units, and, for example, three shelf units R (R1, R2, R2). R3) and, for example, one substrate transfer means MA2, and transfers the wafer W between the inspection station S2 and the interface station S4, and in the station S3. Then, a process for applying a resist solution to the wafer W, a developing process for the wafer W, and a process for heating and cooling the wafer W to a predetermined temperature before and after these processes are performed.

  An example of such a layout of the processing station S3 will be described. For example, when viewed from the back of the cassette station S1, a processing unit U3 including a developing unit 41, a coating unit 42, and the like is provided in two stages on the right side. Yes. In the following description, the cassette station S1 side is referred to as the front side, and the exposure apparatus S5 side is referred to as the back side.

  Further, on the left side of the processing unit U3 when viewed from the cassette station S1, for example, the wafer W can be transferred between the coating unit 42, the developing unit 41, and the shelf unit R, and can be moved up and down, and can be moved left and right, and back and forth. A substrate transfer means MA2 configured to be rotatable around a vertical axis is provided. A shelf unit R1 is disposed on the front side of the substrate transport unit MA2 as viewed from the cassette station S1, a shelf unit R2 is disposed on the back side, and a shelf unit R3 is disposed on the left side. However, for convenience, the shelf unit R3 and the substrate transport means MA2 are omitted in FIG.

  As a result, predetermined spaces are respectively secured in portions of the station S3 adjacent to the first and second inspection units U1 and U2 of the inspection station S2, and the processing unit U3 and the shelf unit are provided via these spaces. R3 will be arranged respectively.

  The shelf unit R includes a heating unit 43 for heating the wafer W, a cooling unit 44 for cooling the wafer W, and a surface for hydrophobicizing the wafer surface, as representatively shown in FIG. 6 as the shelf unit R1. For transferring the wafer W between the hydrophobizing unit 45 and the substrate transfer means MA1 of the inspection station S2 and the substrate transfer means MA2 of the station S3 in the shelf unit R1, and the station in the shelf unit R2 The wafer W is transferred between the substrate transfer means MA2 in S3 and the transfer arm A of the interface station S4 described later, and the wafer W is aligned in the shelf unit R1. The alignment part 47 for performing is arranged vertically.

  For example, the developing unit 41 will be described with reference to FIG. 7. Reference numeral 51 denotes a cup, and a rotatable spin chuck 52 having a vacuum suction function is provided in the cup 51. The spin chuck 52 is configured to be movable up and down by an elevating mechanism 53. When the spin chuck 52 is positioned above the cup 51, the wafer W is transferred to and from an arm 61 (to be described later) of the substrate transfer means MA1. Is done.

  As for the delivery of the wafer W, the spin chuck 52 receives the wafer W on the arm 61 from the lower side relative to the upper side of the cup 51 and receives the wafer W on the side of the spin chuck 52 by the reverse operation. To arm 61. Reference numeral 54 is a processing liquid discharge nozzle, 55 is a processing liquid supply pipe, and 56 is a support arm that horizontally moves the nozzle.

  The discharge nozzle 54 is configured to include, for example, a large number of supply holes arranged in the diameter direction of the wafer W, and discharges developer from the discharge nozzle 54 onto the surface of the wafer W on the spin chuck 52. Is half-rotated to deposit the developer on the wafer W so that a liquid film of the developer is formed.

  The coating unit 42 has substantially the same configuration as the developing unit 41, but the coating unit C is configured such that the discharge nozzle 54 supplies the processing liquid to, for example, the vicinity of the center of the wafer W, and the wafer W on the spin chuck 52. A resist solution, which is a processing solution, is dropped from the discharge nozzle 54 onto the surface of the substrate, and the spin chuck 52 is rotated to spread and apply the resist solution onto the wafer W.

  The substrate transfer means MA (MA1, MA2) includes, for example, as shown in FIG. 8, three arms 61 for holding the wafer W, and a base 62 for supporting the arms 61 so as to advance and retract. And a pair of guide rails 63 and 64 that support the base 62 so as to be movable up and down, and by rotating these guide rails 63 and 64 by a rotation drive unit 65, the base rail 62 can be moved forward and backward. It is configured to be movable up and down and rotatable about a vertical axis.

  An interface station S4 is connected next to the processing station S3, and a wafer W on which a resist film is formed is exposed on the back side of the interface station S4. An exposure apparatus S5 is connected. The interface station S4 includes a transfer arm A for transferring the wafer W between the processing station S3 and the exposure apparatus S5. The transfer arm A is a shelf unit of the processing station S3. In order to transfer the wafer W between the transfer unit 46 of R2 and the exposure apparatus S4, for example, it is configured to be movable up and down, movable left and right, front and rear, and rotatable about a vertical axis.

  Here, the inspection station S2 is configured not to be larger than the width in the arrangement direction of the cassette station S1 and the processing station S2 (the Y direction in FIG. 2, that is, the length in the arrangement direction of the cassettes 22 of the cassette station S1). Further, the cassette station S1, the inspection station S2, the processing station S3, and the interface station S4 are configured to be able to contact and separate from each other. That is, as representatively shown in FIG. 3, the inspection station S <b> 2 is separated from each other by a wall portion, and is joined by a connection member such as a joint stopper, a screw, or a magnet. Accordingly, the inspection station S2 can be disposed between the cassette station S1 and the processing station S3 as in the above-described example, or can be disposed between the processing station S4 and the interface station S4. It has become. Further, in order to facilitate maintenance of the substrate transfer means MA1, the inspection station S2 is configured so that, for example, a caster roller is attached to the lower part of the inspection station S2 and can be pulled out and moved in the front-rear direction (Y direction in the figure). .

  Next, the operation of the above embodiment will be described. First, a cassette 22 storing, for example, 25 wafers W is loaded into the cassette stage 21 by an automatic transfer robot (or an operator), and the wafer W is taken out from the cassette 22 by the transfer arm 23, and the wall portion. It is placed on the transfer section 33 of the inspection station S2 through the transfer port 35 of 34.

  Next, the wafer W is transferred to the film thickness inspection apparatus 31 of the inspection station S2 by the substrate transfer means MA1, where the thickness of the bare silicon is measured. Subsequently, the wafer W is placed on the transfer unit 46 of the shelf unit R1 of the processing station S3 by the substrate transfer means MA1 of the inspection station S2, and then the hydrophobic portion 45 → of the shelf unit R by the substrate transfer means MA2 of the processing station S3. The wafer is transported through the path of the cooling unit 44 of the shelf unit R → the coating unit 42, and after the wafer surface is hydrophobized, the wafer surface is cooled to a predetermined temperature and the temperature is adjusted, and the coating unit 42 applies the resist solution at the predetermined temperature. Is done.

  The wafer W thus coated with the resist solution is transferred to the substrate transfer means MA1 of the inspection station S2 via the transfer section 46 of the shelf unit R1, and the film thickness of the resist film is measured by the film thickness inspection apparatus 31. . The measured wafer W is transferred to the processing station S3 and transferred to the exposure apparatus S5 by the substrate transfer means MA2 via the transfer unit 46 of the shelf unit R2 and the transfer arm A of the interface station S4. Exposure is performed.

  The exposed wafer W is transferred from the exposure apparatus S5 to the transfer arm A of the interface station S4 to the processing station S3 via the transfer unit 46 of the shelf unit R2 of the processing station S3. The wafer W, which has been transported through the path of the heating unit 43 → the cooling unit 44 of the shelf unit R → the development unit 41 and has been subjected to a predetermined temperature adjustment, has a predetermined temperature, for example, a developer application temperature of 23 ° C. in the development unit 41. Developed.

  Thereafter, the wafer W is transferred by the substrate transfer means MA2 of the processing station S3 along the path of the heating unit 43 of the shelf unit R → the cooling unit 44 of the shelf unit R → the transfer unit 46 of the shelf unit R1, and the wafer W of the transfer unit 46 is transferred. Is received by the substrate transfer means MA1 of the inspection station S2. Then, in the inspection station S2, the substrate is transported to the defect inspection apparatus 32 by the substrate transport means MA1, and the development line width is measured, the presence or absence of a scratch on the resist film surface, the overlapping state of the upper layer resist pattern and the lower layer resist pattern, Inspection of the processing state of the development process such as the presence or absence of foreign matter at the time of resist coating, uneven coating of the resist solution, and development defects after the development process is performed.

  Next, the wafer W subjected to the predetermined inspection is transferred from the substrate transfer means MA1 to the transfer unit 33, and the wafer W in the transfer unit 33 is returned to, for example, the original cassette 22 by the transfer arm 23.

  Here, in the above-described apparatus, the wafers W are sequentially sent to the transfer unit 46 of the shelf unit R1 of the processing station S2 through the transfer unit 33 of the inspection station S2, and then the vacant hydrophobizing unit. 45 → vacant cooling unit 44 → vacant coating unit 42 → delivery unit 46 of shelf unit R1 → vacant film thickness inspection apparatus 31 of inspection station S2 → delivery unit 46 of shelf unit R of processing station S2 → interfacing The wafer W after being transferred through the path of the face station S4 and exposed is subjected to the interface station S4 → the vacant heating part 43 of the processing station S2 → the vacant cooling part 44 → the developing unit 41 → empty. Heating unit 43 → vacant cooling unit 44 → transported by the delivery unit 46 of the shelf unit R1, and then the inspection stay ® vacant emissions S2, and the defect inspection apparatus 32 → only to be carried in the path of the delivery section 33.

  In the above-described embodiment, a station provided with an inspection apparatus is configured, and this station is installed between the cassette station S1 and the processing station S3, so that resist application, exposure, development, and inspection are monitored by a common operator. Therefore, the number of operators can be reduced, and when any defect is recognized by the inspection, the following actions such as identification of the cause and elimination of the cause can be promptly performed.

  Further, since the transfer of the wafer W between the processing station S3 and the inspection station S2 is automatically performed, the trouble of the transfer operation is eliminated, and the total operation from the substrate processing to the inspection can be simplified. Further, since the transfer time of the wafer W between these stations S2 and S3 is short, the total work time from the substrate processing to the inspection can be shortened, and the state of the development processing can be inspected in real time. Inspection with high accuracy can be performed, and early detection of any defect can be achieved. Furthermore, since the inspection apparatus is incorporated in the coating / developing apparatus, facilities for reducing particles can be shared.

  In this case, if the inspection station S2 is configured by combining a plurality of inspection apparatuses as in the above example, it is effective that a plurality of inspections can be performed on the wafer W in the same station. Furthermore, since the transport time between the inspection apparatuses is considerably short, the total time required for the inspection is also shortened.

  Further, since the width in the direction perpendicular to the arrangement direction of the inspection stations S2 is not made larger than that of the cassette station S1 or the processing station S2, the portion protruding from the cassette station S1 to the interface station S4 in the Y direction in FIG. This is advantageous in terms of layout.

  Further, when preparing an inspection station S2 having the same width as the cassette station S1 and the like and incorporating a plurality of inspection apparatuses, the width in the arrangement direction of the inspection stations S2 in accordance with the type and size of the inspection apparatus (FIG. 2). Since the length in the middle X direction) has only to be increased, a predetermined space is secured in the inspection station S2 even if a plurality of inspection devices are incorporated therein. That is, the chemical unit C and the electric unit E can be secured below the first and second inspection units U1, U2. Ensuring such a storage space for the chemical system and electrical system is effective because the number of types of resists has increased in recent years, and the number of chemical systems has increased accordingly.

  Furthermore, it is desirable that the inspection apparatus is not disposed adjacent to the heating unit 43 of the shelf unit R because the measurement environment accuracy of the inspection apparatus is adversely affected when the ambient environment temperature of the inspection apparatus becomes 30 ° C. or higher, for example. In the embodiment, the processing station S3 is laid out so as to secure a predetermined space in a portion adjacent to the first and second inspection units U1 and U2, and thus is incorporated in these inspection units U1 and U2. There is an advantage that each inspection apparatus is hardly affected by the temperature of the processing station S3.

  At this time, even if the first and second inspection units U1, U2 are laid out so as to be adjacent to the heating unit of the shelf unit R, the inspection station S2 is partitioned from the processing station S3 by the wall portion 34. Each inspection apparatus is not easily affected by the temperature from the processing station S3, and if the inspection station S2 is configured to be adjusted to a predetermined temperature and humidity by the filter unit 36, each inspection apparatus can Since the temperature and humidity are adjusted to a predetermined range, a highly accurate inspection can be performed without being affected by the surrounding temperature and humidity. When the first and second inspection units U1 and U2 are laid out so as to be adjacent to the heating unit of the shelf unit R, a heat insulating means such as a heat insulating material or temperature control is provided between the inspection units U1 and U2 and the heating unit. You may make it provide piping etc. which let water flow. Furthermore, the environmental atmosphere such as temperature and humidity at the time of measurement in the inspection station S2 may be adjusted according to the measurement application, for example, the same environmental atmosphere as at the time of coating processing, development processing, or exposure processing. You may make it adjust to.

  In the above-described embodiment, the example in which the inspection station S2 includes the film thickness inspection apparatus 31 and the defect inspection apparatus 32 as the inspection unit has been described. However, the inspection station S2 may include only the defect inspection apparatus 32. In this case, there is an advantage that the inspection unit can be incorporated in the coating / developing apparatus without changing the process flow. That is, in the current coating / developing apparatus, the transfer flow of the wafer W is determined. As will be described with reference to FIG. 2, the wafer W before exposure is transferred from the cassette station S1 to the exposure apparatus S5 in the drawing from the left side to the right side in the X direction. Then, the exposed wafer W is transferred from the right side to the left side in the X direction from the exposure apparatus S5 to the cassette station S1 through the reverse path. Accordingly, when an inspection unit for performing a predetermined inspection after the development processing is provided as in the defect inspection apparatus 32, if the inspection station S2 is installed between the cassette station S1 and the processing station S3, the transfer flow of the wafer W described above. The predetermined inspection can be performed after the development processing without going backward.

  Furthermore, in the above-described example, the cassette station S1, the inspection station S2, the processing station S3, and the interface station S4 are provided so as to be able to contact and separate from each other.

  Next, a layout example in the case where predetermined inspection is performed after application of the resist solution and after development processing will be described with reference to FIG. This configuration includes two processing stations, a first processing station S6 for applying a resist solution and a second processing station S7 for performing development processing. The first and second processing stations S6, S7 are provided. The cassette station S1, the first processing station S6, the inspection station S2, the second processing station S7, the interface station S4, and the exposure are arranged from the cassette station S1 to the exposure apparatus S5 so that the inspection station S2 is arranged between them. The layout is performed in the order of the device S5.

  Each of the first and second processing stations S6 and S7 includes a coating unit 42 that forms, for example, four first substrate processing units and a developing unit 41 that forms a second substrate processing unit, respectively. The configuration is almost the same as the processing station S2 described above. The inspection station S2 is also configured in substantially the same manner as in the example shown in FIG. 1, but between the first processing station S6 and the inspection station S2, the transfer unit 46 of the shelf unit R2 of the processing station S6 is used. The wafer W is transferred by the substrate transfer means MA1 of the inspection station S2, and the substrate transfer means of the inspection station S2 is transferred between the inspection station S2 and the second processing station S7 via the transfer section 46 of the processing station S7. The wafer W is transferred by MA1.

  In such a configuration, the wafer W is transferred in the next transfer flow. That is, the wafer W whose thickness of the bare silicon has been measured in advance is placed on the delivery unit 46 of the shelf unit R1 of the first processing station S6 by the delivery arm 23, and then the hydrophobicity of the shelf unit R by the substrate transfer means MA2. It is conveyed by the path of the conversion unit 45 → the cooling unit 44 of the shelf unit R → the coating unit 42. The wafer W after application of the resist solution is transferred by the substrate transfer means MA2 along the path of the heating unit 43 of the shelf unit R → the cooling unit 43 of the shelf unit R → the transfer unit 46 of the shelf unit R2, and then the substrate of the inspection station S2. It is transported to the station S2 by the transport means MA1, and the aforementioned predetermined inspection is performed by a predetermined inspection apparatus such as the film thickness inspection apparatus 31 and the defect inspection apparatus 32.

  The wafer W thus inspected is transferred by the substrate transfer means MA1 to the transfer section 46 of the shelf unit R1 of the second processing station S7, and this wafer W is transferred to the shelf unit R2 by the substrate transfer means MA2 of this station S7. It is transferred to the transfer arm A of the interface station S4 via the transfer unit 46 and transferred to the exposure apparatus S5. Next, the exposed wafer W is transferred from the transfer arm A of the interface station S4 to the transfer unit 46 of the shelf unit R2 of the second processing station S7, the substrate transfer means MA2, the heating unit 43 of the shelf unit R, and the cooling unit of the shelf unit R. 44 → Development unit 41 → Heating unit 43 of the shelf unit R → Cooling unit 44 of the shelf unit R → Transfer by the path of the delivery unit 46 of the shelf unit R1.

  Thereafter, the wafer W is transferred by the substrate transfer means MA1 of the inspection station S2 to the defect inspection apparatus 32 or the like of the station S2, and a predetermined inspection is performed.

  After the inspection, the wafer W is transferred to the transfer unit 46 of the shelf unit R2 of the first processing station S6 by the substrate transfer unit MA1 of the inspection station S2, and then passes through the transfer unit 46 of the shelf unit R1 by the substrate transfer unit MA2. For example, the original cassette 22 is conveyed.

  Thus, in this example, since the inspection station S2 is provided so as to be able to contact and separate and is disposed between the first processing station S6 and the second processing station S7, the thickness of the bare silicon can be measured in advance. For example, a predetermined inspection can be performed after applying the resist solution and after the developing process without reversing the transfer flow of the wafer W.

  In the present invention, two inspection stations S2 are prepared, and the first inspection station S2, the processing station S3, the second inspection station S2, the interface station S4, and the exposure apparatus S5 are arranged in the X direction from the cassette station S1. You may make it arrange with. In this case, the wafer W is first measured for the thickness of the bare silicon by the film thickness inspection apparatus 31 of the first inspection station S2, and then the hydrophobic treatment and the resist solution coating process are performed at the processing station S3. A predetermined inspection after resist application is performed at the second inspection station S2.

  Next, the wafer W is transferred to the exposure apparatus S5 via the interface station S4 and subjected to exposure, and the exposed wafer W is inspected for exposure at the second inspection station S2 via the interface station S4. Is called. Thereafter, the wafer W is subjected to development processing at the processing station S3 and then subjected to predetermined inspection after development at the first inspection station S2. In such a configuration, the wafer W is in the cassette station S1, the first inspection station S2, the processing station S3, the second inspection station S2, the exposure apparatus S5, the second inspection station, the processing station S3, and the first inspection. Since the wafer is transported along the path of station S2 → cassette station S1, predetermined inspection can be performed without reversing the wafer W transport flow of cassette station S1 → exposure apparatus S5 → cassette station S1.

  Further, in the present invention, three inspection stations S2 are prepared, the first inspection station S2, the first inspection station S2, the second inspection station S2, and the development in the X direction from the cassette station S1. The second processing station S7 for processing, the third inspection station S2, the interface station S4, and the exposure apparatus S5 may be arranged in this order.

  In this case, the wafer W is first measured for the thickness of the bare silicon by the film thickness inspection apparatus 31 of the first inspection station S2, and then subjected to the hydrophobization process and the resist solution coating process in the first processing station S6. The second inspection station S2 (or the third inspection station S2) performs a predetermined inspection after resist coating.

  Next, the wafer W is transferred to the exposure apparatus S5 via the second processing station S7 and the interface station S4, and exposure is performed. The exposed wafer W is inspected for exposure at the third inspection station S2 via the interface station S4. Thereafter, the wafer W is subjected to development processing at the second processing station S7, and then subjected to predetermined inspection after development at the second inspection station S2 (or the first inspection station S2). Even in such a configuration, a predetermined inspection can be performed without reversing the transfer flow of the wafer W.

  Furthermore, in the present invention, two inspection stations S2 are prepared, a first processing station S6 that performs resist coating processing in the X direction from the cassette station S1, a first inspection station S2, and a second processing that performs development processing. The processing station S7, the second inspection station S2, the interface station S4, and the exposure apparatus S5 may be arranged in this order.

  In this case, the wafer W whose thickness of the bare silicon has been measured in advance is subjected to a hydrophobization process and a resist solution coating process in the first processing station S6, and the first inspection station S2 (or the second inspection station). In S2), a predetermined inspection after applying the resist is performed.

  Next, the wafer W is transferred to the exposure apparatus S5 via the second processing station S7 and the interface station S4, and exposure is performed. The exposed wafer W is inspected for exposure in the second inspection station S2 via the interface station S4. Thereafter, the wafer W is subjected to development processing at the second processing station S7, and then subjected to predetermined inspection after development at the first inspection station S2. Even in such a configuration, a predetermined inspection can be performed without reversing the transfer flow of the wafer W.

  At this time, the inspection station S2 may have one or more inspection devices. The types of inspection devices include a particle counter, EBR width measurement, WEE width measurement, coating unevenness, in addition to a film thickness measurement device and a defect device. You may make it provide the apparatus which test | inspects an image development unevenness, an unapplied location, an undeveloped location, a line width measurement, exposure focus shift | offset | difference, etc. Further, as the storage section provided by using the space of the inspection station, all may be used as the chemical unit C or all as the electric unit E depending on the type of film formed on the wafer W. May be.

  Further, the substrate transfer means MA1 may not be provided in the inspection station S2, and the transfer of the wafer W in the station S2 may be performed by the transfer arm 23 of the cassette station S1 or the substrate transfer means MA2 of the processing station S2.

  Furthermore, the inspection station S2 need not be configured to be partitioned from the periphery from the wall 34 as long as the inspection station S2 is provided so as to be detachable from the cassette station S1, the processing station S3, etc., and the atmosphere in the inspection station S2 Does not necessarily have to be adjusted to a predetermined temperature and humidity.

  Further, instead of performing the hydrophobic treatment on the wafer surface as in the above example, an antireflection film may be formed, or the substrate is not limited to the wafer but may be a glass substrate for a liquid crystal display. .

1 is a schematic view showing a coating and developing apparatus according to an embodiment of the present invention. It is a schematic plan view which shows the said coating and developing apparatus. It is a perspective view which shows the inspection station of the said application | coating and developing apparatus. It is sectional drawing which shows the said inspection station. It is sectional drawing which shows an example of a test | inspection part. It is a side view showing an example of the 1st inspection unit, a shelf unit, and a processing unit. It is sectional drawing which shows an application | coating unit. It is a perspective view which shows a board | substrate conveyance means. It is a schematic plan view which shows the application | coating and developing apparatus which concerns on other embodiment of this invention. It is a schematic plan view showing a conventional coating and developing apparatus.

Explanation of symbols

W Semiconductor wafer S1 Cassette station S2 Inspection station S3 Processing station
S4 Interface station S5 Exposure device S6 First processing station S7 Second processing station C Chemical unit E Electric unit 31 Film thickness inspection device 32 Defect inspection device 33 Delivery unit 41 Development unit 42 Coating unit MA1, MA2 Substrate Transport means

Claims (12)

In a coating and developing apparatus that performs a coating process of a resist solution on a substrate and supplies a developing solution to the substrate after being exposed by an exposure apparatus to perform the developing process
A cassette station including a placement unit for placing a substrate cassette containing a plurality of substrates, and delivery means for delivering the substrate to the substrate cassette placed on the placement unit;
An application unit for applying a resist solution to a substrate conveyed from the cassette station, a developing unit for supplying a developing solution to the substrate after exposure, a heating unit for heating the substrate, and the substrate A cooling station for cooling, and a processing station comprising:
An inspection section provided between the cassette station and the processing station for inspecting the substrate after the development processing,
A coating and developing apparatus, wherein a substrate developed at a processing station is carried into an inspection section, and the substrate after inspection is transported to a cassette station.   2. The coating and developing device according to claim 1, further comprising substrate transport means provided between the cassette station and the processing station for transferring a substrate developed at the processing station to the inspection unit. apparatus.   A substrate transfer section provided between the cassette station and the processing station, and a substrate transfer means for transferring the substrate between the substrate transfer section and the inspection section, and the substrate after the inspection is transferred to the substrate 2. The coating / developing apparatus according to claim 1, wherein the transfer unit of the cassette station receives the substrate of the substrate transfer unit after being transferred to the substrate transfer unit.   The station including the inspection unit and a substrate transport unit for delivering the substrate developed by the processing station to the inspection unit is arranged in a direction in which the substrate cassettes of the cassette station are arranged with respect to the processing station. 3. The coating and developing apparatus according to claim 2, wherein the coating and developing apparatus are connected in a substantially orthogonal direction.   The coating / developing apparatus according to claim 4, wherein the station is configured to be able to contact and separate from the cassette station and / or the processing station.   6. The coating and developing apparatus according to claim 1, wherein an interface station for connecting to the exposure apparatus is connected to the processing station.   7. The coating and developing apparatus according to claim 6, wherein the interface station is connected to the processing station on a side opposite to the cassette station. In a coating and developing apparatus that performs a coating process of a resist solution on a substrate and supplies a developing solution to the substrate after being exposed by an exposure apparatus to perform a developing process.
A cassette station including a placement unit for placing a substrate cassette containing a plurality of substrates, and delivery means for delivering the substrate to the substrate cassette placed on the placement unit;
An application unit for applying a resist solution to a substrate conveyed from the cassette station, a heating unit for heating the substrate, a cooling unit for cooling the substrate, and the application unit, the heating unit, and the cooling unit. A first processing station including substrate transport means for transporting the substrate between,
A developing unit for supplying a developing solution to the substrate after exposure conveyed from the cassette station via the first processing station and the exposure apparatus, a heating unit for heating the substrate, and cooling the substrate And a substrate transfer means for transferring the substrate between the developing unit, the heating unit and the cooling unit, and connected to the opposite side of the cassette station with respect to the first processing station. A second processing station;
An application / development apparatus, comprising: an inspection unit provided between the first processing station and the second processing station for inspecting the substrate after the development processing. .   Between the first processing station and the second processing station, in addition to the inspection unit for inspecting the state after the development processing on the substrate, the inspection unit for inspecting the state after the coating process of the resist solution The coating and developing apparatus according to claim 8, further comprising:   Inspecting the state after the development processing is performed by measuring the development line width, inspecting the overlapping state of the upper layer resist pattern and the lower layer resist pattern, inspecting the development defect after the development processing, inspecting the development unevenness, and the undeveloped portion. The coating and developing apparatus according to claim 1, further comprising: The coating / developing apparatus according to claim 1, wherein a storage unit for equipment used in the processing station is stacked in the inspection unit. 12. The coating and developing apparatus according to claim 11, wherein the facility is a chemical supply system or an electrical facility.

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