JP2006165192A - Substrate processor and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processor and a substrate processing method with which the component of a photosensitive material on a substrate is prevented from dissolving into liquid in an exposure device. <P>SOLUTION: The substrate processor 500 is provided with an indexer block 9, a reflection preventing film processing block 10, a resist film processing block 11, a resist cover film processing block 12, an inspection block 13, a development processing block 14, a resist cover film removing block 15, and an interface block 16. The exposure device 17 is arranged so that it is adjacent to the interface block 16. In the resist film processing block 11, a resist film is formed on the substrate W. In the resist cover film processing block 12, a resist cover film is formed on the resist film. In the inspection block 13, film thickness of a reflection preventing film, the resist film and the resist cover film is measured. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate.

  In order to perform various processes on various substrates such as a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask substrate, It is used.

  In such a substrate processing apparatus, generally, a plurality of different processes are continuously performed on a single substrate. The substrate processing apparatus described in Patent Document 1 includes an indexer block, an antireflection film processing block, a resist film processing block, a development processing block, and an interface block. An exposure apparatus that is an external apparatus separate from the substrate processing apparatus is disposed adjacent to the interface block.

  In the substrate processing apparatus described above, the substrate carried in from the indexer block is configured such that after the formation of the antireflection film and the coating process of the resist film are performed in the antireflection film processing block and the resist film processing block, the interface block is To the exposure apparatus. After the exposure process is performed on the resist film on the substrate in the exposure apparatus, the substrate is transported to the development processing block via the interface block. After a resist pattern is formed by performing development processing on the resist film on the substrate in the development processing block, the substrate is transported to the indexer block.

  In recent years, miniaturization of resist patterns has become an important issue as the density and integration of devices increase. In a conventional general exposure apparatus, exposure processing is performed by reducing and projecting a reticle pattern onto a substrate through a projection lens. However, in such a conventional exposure apparatus, since the line width of the exposure pattern is determined by the wavelength of the light source of the exposure apparatus, there is a limit to the miniaturization of the resist pattern.

Accordingly, a liquid immersion method has been proposed as a projection exposure method that enables further miniaturization of the exposure pattern (see, for example, Patent Document 2). In the projection exposure apparatus of Patent Document 2, a liquid is filled between the projection optical system and the substrate, and the exposure light on the substrate surface can be shortened. Thereby, the exposure pattern can be further miniaturized.
JP 2003-324139 A International Publication No. 99/49504 Pamphlet

  However, in the projection exposure apparatus disclosed in Patent Document 2, since the exposure process is performed in a state where the substrate and the liquid are in contact with each other, a part of the resist component applied on the substrate is eluted into the liquid. The resist components eluted in the liquid may remain on the surface of the substrate and cause defects.

  Further, the resist components eluted in the liquid contaminate the lens of the exposure apparatus. As a result, there is a risk of dimensional defects and shape defects of the exposure pattern.

  An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of preventing a component of a photosensitive material on a substrate from eluting into a liquid in an exposure apparatus.

  A substrate processing apparatus according to a first aspect of the present invention is a substrate processing apparatus disposed so as to be adjacent to an exposure apparatus, and is provided with a processing unit that performs processing on a substrate and a processing unit that is provided adjacent to one end of the processing unit. A transfer unit for transferring the substrate between the exposure unit and the exposure apparatus, and the processing unit includes a first processing unit for forming a photosensitive film made of a photosensitive material on the substrate, and a first processing unit. And a second processing unit for forming a protective film for protecting the photosensitive film on the substrate before the exposure processing by the exposure apparatus, and after the protective film is formed by the second processing unit. And a first inspection unit that measures the thickness of the protective film before the exposure processing by the exposure apparatus.

  In the substrate processing apparatus according to the present invention, a photosensitive film is formed on the substrate in the first processing unit. Thereafter, a protective film is formed on the photosensitive film in the second processing unit. Thereafter, the thickness of the protective film is measured by the first inspection unit. Next, the substrate is conveyed from the processing unit to the exposure apparatus via the transfer unit, and the exposure process is performed on the substrate in the exposure apparatus. Thereafter, the substrate is transported from the delivery unit to the processing unit via the delivery unit.

  As described above, the protective film is formed on the photosensitive film by the second processing unit before the exposure process is performed in the exposure apparatus. In this case, even if the exposure processing is performed in a state where the substrate is in contact with the liquid in the exposure apparatus, the components of the photosensitive material are prevented from being eluted into the liquid. Thereby, contamination in the exposure apparatus is reduced, and the photosensitive material components are prevented from remaining on the surface of the substrate. In addition, before the exposure process is performed in the exposure apparatus, the thickness of the protective film is measured by the first inspection unit. Thereby, an abnormality in the thickness and uniformity of the protective film can be detected at an early stage. As a result, it is possible to reduce substrate processing defects that occur in the exposure apparatus.

  The first inspection unit may further measure the film thickness of the photosensitive film. In this case, since the film thicknesses of the protective film and the photosensitive film can be measured simultaneously, the measurement time can be shortened. Moreover, since the thickness of the protective film and the thickness of the photosensitive film can be measured by one inspection unit, the footprint of the substrate processing apparatus can be reduced.

  You may further provide the control means which controls the process conditions in a process part based on the measurement result of a 1st test | inspection unit. In this case, since the processing conditions in the processing unit are controlled based on the measurement result of the first inspection unit, it is possible to sufficiently reduce processing defects of the substrate that occur in the processing unit and the exposure apparatus.

  The processing unit heat-treats the first processing unit, the first processing unit including the first heat-treating unit that heat-treats the substrate, and the first transport unit that transports the substrate, the second processing unit, and the substrate. A second processing unit including a second heat treatment unit and a second transport unit for transporting the substrate, and an inspection processing unit including an inspection transport unit for transporting the first inspection unit and the substrate may be provided. .

  In this case, in the first processing unit, a photosensitive film is formed on the substrate by the first processing unit. Thereafter, the substrate is transferred to the first heat treatment unit by the first transfer unit, and a predetermined heat treatment is performed on the substrate in the first heat treatment unit. Thereafter, the substrate is transported to another adjacent processing unit by the first transport unit.

  Next, in the second processing unit, a protective film is formed on the photosensitive film on the substrate by the second processing unit. Thereafter, the substrate is transferred to the second heat treatment unit by the second transfer unit, and the substrate is subjected to predetermined heat treatment in the second heat treatment unit. Thereafter, the substrate is transported to another adjacent processing unit by the second transport unit.

  Next, in the processing unit for inspection, the thickness of the protective film is measured by the first inspection unit. Thereafter, the substrate is transported to another adjacent processing unit by the inspection transport unit. Thereafter, the substrate is transferred from the processing unit to the exposure apparatus via the transfer unit, and the exposure process is performed on the substrate in the exposure apparatus. The substrate after the exposure process is transported from the exposure apparatus to the processing unit via the transfer unit.

  In this substrate processing apparatus, processing contents are divided for each processing unit. Therefore, by adding the second processing unit and the inspection processing unit to the existing substrate processing apparatus having the first processing unit, before the exposure processing is performed in the exposure apparatus, the protective film is formed and the protective film is formed. It becomes possible to measure the film thickness. As a result, it is possible to reduce substrate processing defects occurring in the exposure apparatus at low cost.

  The processing unit may further include a third processing unit that forms an antireflection film on the substrate before forming the photosensitive film by the first processing unit. In this case, since the antireflection film is formed on the substrate by the third processing unit, standing waves and halation generated during the exposure processing can be reduced. Thereby, it is possible to further reduce processing defects of the substrate that occur during the exposure processing.

  The first inspection unit may further measure the film thickness of the antireflection film. In this case, since the film thicknesses of the protective film and the antireflection film can be measured at the same time, the measurement time can be greatly shortened. Moreover, since the film thicknesses of the protective film and the antireflection film can be measured by one inspection unit, the footprint of the substrate processing apparatus can be greatly reduced.

  The processing unit heat-treats the first processing unit, the first processing unit including the first heat-treating unit that heat-treats the substrate, and the first transport unit that transports the substrate, the second processing unit, and the substrate. A second processing unit including a second thermal processing unit and a second transport unit for transporting the substrate; an inspection processing unit including an inspection transport unit for transporting the first inspection unit and the substrate; and a third processing. A third processing unit including a unit, a third heat treatment unit for performing heat treatment on the substrate, and a third transport unit for transporting the substrate may be provided.

  This substrate processing apparatus has a configuration in which second and third processing units and an inspection processing unit are added to an existing substrate processing apparatus having a first processing unit. With such a configuration, the protective film can be formed and the thickness of the protective film can be measured before the exposure process is performed in the exposure apparatus. Thereby, substrate processing defects can be significantly reduced at low cost.

  The processing unit may further include a fourth processing unit that performs development processing on the substrate after the exposure processing by the exposure apparatus. In this case, after the exposure process, the substrate can be developed quickly.

  The processing unit heat-treats the first processing unit, the first processing unit including the first heat-treating unit that heat-treats the substrate, and the first transport unit that transports the substrate, the second processing unit, and the substrate. A second processing unit including a second thermal processing unit and a second transport unit for transporting the substrate; an inspection processing unit including an inspection transport unit for transporting the first inspection unit and the substrate; and a fourth processing. A unit, a fourth heat treatment unit for performing heat treatment on the substrate, and a fourth processing unit including a fourth transport unit for transporting the substrate may be provided.

  This substrate processing apparatus has a configuration in which second and fourth processing units and an inspection processing unit are added to an existing substrate processing apparatus having a first processing unit. With such a configuration, the protective film can be formed and the thickness of the protective film can be measured before the exposure process is performed in the exposure apparatus, and the substrate can be rapidly developed after the exposure process. As a result, it is possible to significantly reduce the processing defects of the substrate at a low cost while shortening the processing time.

  The processing unit may further include a fifth processing unit that removes the protective film after the exposure processing by the exposure apparatus and before the development processing by the fourth processing unit. In this case, since the protective film is reliably removed in the fifth processing unit before the development processing is performed on the substrate in the fourth processing unit, the development processing can be performed reliably.

  The processing unit heat-treats the first processing unit, the first processing unit including the first heat-treating unit that heat-treats the substrate, and the first transport unit that transports the substrate, the second processing unit, and the substrate. A second processing unit including a second thermal processing unit and a second transport unit for transporting the substrate; an inspection processing unit including an inspection transport unit for transporting the first inspection unit and the substrate; and a fourth processing. A fourth processing unit including a unit, a fourth heat treatment unit for performing heat treatment on the substrate, and a fourth transport unit for transporting the substrate; and a fifth processing unit including a fifth transport unit for transporting the fifth processing unit and the substrate. The processing unit may be provided.

  This substrate processing apparatus has a configuration in which second, fourth, and sixth processing units and an inspection processing unit are added to an existing substrate processing apparatus having a first processing unit. With such a configuration, the protective film can be formed and the thickness of the protective film can be measured before the exposure process is performed in the exposure apparatus, and the protective film can be reliably removed before the development process is performed. it can. Thereby, substrate processing defects can be significantly reduced at low cost.

  The inspection processing unit may be arranged between the second processing unit and the fourth processing unit. In this case, since the measurement or inspection performed before the exposure processing and the measurement or inspection performed after the development processing can be performed in one processing unit, the footprint of the substrate processing apparatus can be greatly reduced.

  The inspection processing unit includes a second inspection unit that measures the film quality of the photosensitive film, a third inspection unit that measures the line width of the pattern formed on the substrate formed in the fourth processing unit, and a pattern overlap. It may further include at least one of a fourth inspection unit that performs alignment measurement and a fifth inspection unit that performs inspection of defects on the substrate.

  In this case, since a plurality of measurements or inspections can be performed in one processing unit, the footprint of the substrate processing apparatus can be sufficiently reduced.

  The transfer unit conveys the substrate between a sixth processing unit that performs predetermined processing on the substrate, a mounting unit on which the substrate is temporarily mounted, and the processing unit, the sixth processing unit, and the mounting unit. And a seventh transport unit that transports the substrate between the placement unit and the exposure apparatus.

  In this case, the substrate is transported from the processing unit to the sixth processing unit by the sixth transport unit. After predetermined processing is performed on the substrate in the sixth processing unit, the substrate is transported to the placement unit by the sixth transport unit. Thereafter, the substrate is transported from the placement unit to the exposure apparatus by the seventh transport unit. After the exposure processing is performed on the substrate in the exposure apparatus, the substrate is transported from the exposure apparatus to the mounting portion by the seventh transport unit. Thereafter, the substrate is transported from the placement unit to the processing unit by the sixth transport unit.

  As described above, by disposing the sixth processing unit in the transfer unit and transporting the substrate by the two transport units, it becomes possible to add processing contents without increasing the footprint of the substrate processing apparatus. .

  The sixth transport unit includes first and second holding means for holding the substrate, and the sixth transport unit is configured to transfer the substrate before the exposure processing by the exposure apparatus by the first holding means. And holding the substrate by the second holding means when carrying the substrate after the exposure processing by the exposure apparatus, and the seventh carrying unit includes third and fourth holding means for holding the substrate. The seventh transport unit holds the substrate by the third holding unit when transporting the substrate before the exposure process by the exposure apparatus, and the fourth transport unit when transporting the substrate after the exposure process by the exposure apparatus. The substrate may be held by holding means.

  In this case, the first and third holding means are used when transporting the substrate to which the liquid before the exposure process is not attached, and the second and fourth holding means are the substrates to which the liquid after the exposure process is attached. It is used when transporting. Therefore, since no liquid adheres to the first and third holding means, it is possible to prevent the liquid from adhering to the substrate before the exposure processing. This prevents dust in the atmosphere from adhering to the substrate before the exposure process, so that contamination in the exposure apparatus can be prevented. As a result, it is possible to reduce substrate processing defects that occur in the exposure apparatus.

  The second holding means may be provided below the first holding means, and the fourth holding means may be provided below the third holding means. In this case, even if the liquid falls from the second and fourth holding means and the substrate held by them, the liquid does not adhere to the first and third holding means and the substrate held by them. This reliably prevents the liquid from adhering to the substrate before the exposure process.

  The sixth processing unit may include an edge exposure unit that exposes the peripheral edge of the substrate. In this case, an exposure process is performed on the peripheral edge of the substrate in the edge exposure unit.

  The protective film may be made of a fluororesin. In this case, the photosensitive film can be reliably protected.

  A substrate processing method according to a second invention is a method of processing a substrate in a substrate processing apparatus that is disposed adjacent to an exposure apparatus and includes a first processing unit, a second processing unit, and a first inspection unit. A step of forming a photosensitive film made of a photosensitive material on a substrate by a first processing unit before an exposure process by an exposure apparatus; and an exposure apparatus after the formation of the photosensitive film by the first processing unit. A step of forming a protective film for protecting the photosensitive film on the substrate by the second processing unit before the exposure processing by the first processing unit; And a step of measuring the film thickness of the photosensitive film by the inspection unit.

  In the substrate processing method according to the present invention, after the photosensitive film is formed on the substrate in the first processing unit, the protective film is formed on the photosensitive film in the second processing unit. Thereafter, the thickness of the protective film is measured by the first inspection unit. Thereafter, exposure processing is performed on the substrate in the exposure apparatus.

  As described above, the protective film is formed on the photosensitive film by the second processing unit before the exposure process is performed in the exposure apparatus. In this case, even if the exposure processing is performed in a state where the substrate is in contact with the liquid in the exposure apparatus, the components of the photosensitive material are prevented from being eluted into the liquid. Thereby, contamination in the exposure apparatus is reduced, and the photosensitive material components are prevented from remaining on the surface of the substrate. In addition, before the exposure process is performed in the exposure apparatus, the thickness of the protective film is measured by the first inspection unit. Thereby, the abnormality of the film thickness and uniformity of a protective film can be discovered at an early stage. As a result, it is possible to reduce substrate processing defects that occur during exposure processing.

  According to the present invention, the protective film is formed on the photosensitive film by the second processing unit before the exposure process is performed in the exposure apparatus. In this case, even if the exposure processing is performed in a state where the substrate is in contact with the liquid in the exposure apparatus, the components of the photosensitive material are prevented from being eluted into the liquid. Thereby, contamination in the exposure apparatus is reduced, and the photosensitive material components are prevented from remaining on the surface of the substrate. In addition, before the exposure process is performed in the exposure apparatus, the thickness of the protective film is measured by the first inspection unit. Thereby, the abnormality of the film thickness and uniformity of a protective film can be discovered at an early stage. As a result, it is possible to reduce substrate processing defects that occur during exposure processing.

  Hereinafter, a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, the substrate refers to a semiconductor substrate, a liquid crystal display substrate, a plasma display substrate, a photomask glass substrate, an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, a photomask substrate, and the like. Say.

  FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention.

  1 and the subsequent drawings are provided with arrows indicating the X direction, the Y direction, and the Z direction orthogonal to each other in order to clarify the positional relationship. The X direction and the Y direction are orthogonal to each other in the horizontal plane, and the Z direction corresponds to the vertical direction. In each direction, the direction in which the arrow points is the + direction, and the opposite direction is the-direction. Further, the rotation direction around the Z direction is defined as the θ direction.

  As shown in FIG. 1, the substrate processing apparatus 500 includes an indexer block 9, an antireflection film processing block 10, a resist film processing block 11, a resist cover film processing block 12, an inspection block 13, a development processing block 14, and a resist. A cover film removal block 15 and an interface block 16 are included. An exposure device 17 is disposed adjacent to the interface block 16. In the exposure apparatus 17, the substrate W is subjected to exposure processing by a liquid immersion method.

  Hereinafter, each of the indexer block 9, the antireflection film processing block 10, the resist film processing block 11, the resist cover film processing block 12, the inspection block 13, the development processing block 14, the resist cover film removal block 15 and the interface block 16. Is called a processing block.

  The indexer block 9 includes a main controller (control unit) 30 that controls the operation of each processing block, a plurality of carrier platforms 40, and an indexer robot IR. The indexer robot IR is provided with a hand IRH for delivering the substrate W.

  The anti-reflection film processing block 10 includes anti-reflection film heat treatment units 100 and 101, an anti-reflection film coating processing unit 200, and a first central robot CR1. The antireflection film coating treatment unit 200 is provided to face the antireflection film heat treatment units 100 and 101 with the first central robot CR1 interposed therebetween. The first center robot CR1 is provided with hands CRH1 and CRH2 for transferring the substrate W up and down.

  A partition wall 20 is provided between the indexer block 9 and the anti-reflection film processing block 10 for shielding the atmosphere. The partition wall 20 is provided with substrate platforms PASS 1 and PASS 2 that are adjacent to each other in the vertical direction for transferring the substrate W between the indexer block 9 and the anti-reflection film processing block 10. The upper substrate platform PASS1 is used when transporting the substrate W from the indexer block 9 to the antireflection film processing block 10, and the lower substrate platform PASS2 is used to transport the substrate W to the antireflection film processing block. It is used when transporting from 10 to the indexer block 9.

  The substrate platforms PASS1, PASS2 are provided with optical sensors (not shown) that detect the presence or absence of the substrate W. Thereby, it is possible to determine whether or not the substrate W is placed on the substrate platforms PASS1 and PASS2. The substrate platforms PASS1, PASS2 are provided with a plurality of support pins fixedly installed. The optical sensor and the support pin are also provided in the same manner on the substrate platforms PASS3 to PASS16 described later.

  The resist film processing block 11 includes resist film heat treatment units 110 and 111, a resist film coating processing unit 210, and a second central robot CR2. The resist film coating processing section 210 is provided opposite to the resist film heat processing sections 110 and 111 with the second central robot CR2 interposed therebetween. The second center robot CR2 is provided with hands CRH3 and CRH4 for transferring the substrate W up and down.

  A partition wall 21 is provided between the antireflection film processing block 10 and the resist film processing block 11 for shielding the atmosphere. The partition wall 21 is provided with substrate platforms PASS3 and PASS4 which are close to each other in the vertical direction for transferring the substrate W between the antireflection film processing block 10 and the resist film processing block 11. The upper substrate platform PASS3 is used when the substrate W is transported from the antireflection film processing block 10 to the resist film processing block 11, and the lower substrate platform PASS4 is used to transfer the substrate W to the resist film. It is used when transporting from the processing block 11 to the processing block 10 for antireflection film.

  The resist cover film processing block 12 includes resist cover film heat treatment units 120 and 121, a resist cover film coating processing unit 220, and a third central robot CR3. The resist cover film coating processing unit 220 is provided opposite to the resist cover film heat treatment units 120 and 121 with the third central robot CR3 interposed therebetween. The third center robot CR3 is provided with hands CRH5 and CRH6 for transferring the substrate W up and down.

  A partition wall 22 is provided between the resist film processing block 11 and the resist cover film processing block 12 for shielding the atmosphere. The partition wall 22 is provided with substrate platforms PASS5 and PASS6 adjacent to each other in the vertical direction for transferring the substrate W between the resist film processing block 11 and the resist cover film processing block 12. The upper substrate platform PASS5 is used when transporting the substrate W from the resist film processing block 11 to the resist cover film processing block 12, and the lower substrate platform PASS6 is configured to transfer the substrate W to the resist cover film. It is used when transporting from the processing block 12 to the resist film processing block 11.

  The inspection block 13 includes substrate inspection units 230 and 235 and a fourth central robot CR4. The substrate inspection unit 230 and the substrate inspection unit 235 are provided opposite to each other with the fourth center robot CR4 interposed therebetween. The fourth center robot CR4 is provided with hands CRH7 and CRH8 for delivering the substrate W up and down.

  A partition wall 23 is provided between the resist cover film processing block 12 and the inspection block 13 for shielding the atmosphere. The partition wall 23 is provided with substrate platforms PASS 7 and PASS 8 that are adjacent to each other in the vertical direction for transferring the substrate W between the resist cover film processing block 12 and the inspection block 13. The upper substrate platform PASS7 is used when transporting the substrate W from the resist cover film processing block 12 to the inspection block 13, and the lower substrate platform PASS8 is configured to transfer the substrate W from the inspection block 13 to the resist cover. Used when transported to the membrane processing block 12.

  The development processing block 14 includes development heat treatment units 140 and 141, a development processing unit 240, and a fifth center robot CR5. The development processing unit 240 is provided to face the development heat treatment units 140 and 141 with the fifth central robot CR5 interposed therebetween. The fifth center robot CR5 is provided with hands CRH9 and CRH10 for transferring the substrate W up and down.

  A partition wall 24 is provided between the inspection block 13 and the development processing block 14 for shielding the atmosphere. Substrate platforms PASS9 and PASS10 for transferring the substrate W between the inspection block 13 and the development processing block 14 are provided in the partition wall 24 close to each other in the vertical direction. The upper substrate platform PASS9 is used when the substrate W is transferred from the inspection block 13 to the development processing block 14, and the lower substrate platform PASS10 is used to transfer the substrate W from the development processing block 14 to the inspection block 13. Used when transporting.

  The resist cover film removal block 15 includes post-exposure bake (PEB) heat treatment units 150 and 151, a resist cover film removal processing unit 250, and a sixth central robot CR6. The post-exposure bake heat treatment section 151 is adjacent to the interface block 16 and includes substrate platforms PASS13 and PASS14 as described later. The resist cover film removal processing unit 250 is provided to face the post-exposure bake heat treatment units 150 and 151 with the sixth central robot CR6 interposed therebetween. The sixth center robot CR6 is provided with hands CRH11 and CRH12 for transferring the substrate W up and down.

  A partition wall 25 is provided between the development processing block 14 and the resist cover film removal block 15 for shielding the atmosphere. The partition wall 25 is provided with substrate platforms PASS11 and PASS12 close to each other in the vertical direction for transferring the substrate W between the development processing block 14 and the resist cover film removal block 15. The upper substrate platform PASS11 is used when transporting the substrate W from the development processing block 14 to the resist cover film removal block 15, and the lower substrate platform PASS12 is configured to transfer the substrate W to the resist cover film removal block 15. Is used when transported to the development processing block 14.

  The interface block 16 includes a seventh central robot CR7, a feed buffer unit SBF, an interface transport mechanism IFR, and an edge exposure unit EEW. In addition, a return buffer unit RBF and substrate platforms PASS15 and PASS16, which will be described later, are provided below the edge exposure unit EEW. The seventh center robot CR7 is provided with hands CRH13 and CRH14 for transferring the substrate W up and down.

  In the substrate processing apparatus 500 according to the present embodiment, the indexer block 9, the antireflection film processing block 10, the resist film processing block 11, the resist cover film processing block 12, the inspection block 13, and the development along the Y direction. A processing block 14, a resist cover film removal block 15, and an interface block 16 are arranged in order.

  FIG. 2 is a side view of the substrate processing apparatus 500 of FIG. 1 viewed from the + X direction.

  In the antireflection film coating processing section 200 (see FIG. 1) of the antireflection film processing block 10, three coating units BARC are stacked one above the other. Each coating unit BARC includes a spin chuck 51 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 52 that supplies a coating liquid for an antireflection film to the substrate W held on the spin chuck 51.

  In the resist film coating processing section 210 (see FIG. 1) of the resist film processing block 11, three coating units RES are vertically stacked. Each coating unit RES includes a spin chuck 61 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 62 that supplies a coating liquid for a resist film to the substrate W held on the spin chuck 61.

  In the resist cover film coating processing section 220 (see FIG. 1) of the resist cover film processing block 12, three coating units COV are vertically stacked. Each coating unit COV includes a spin chuck 71 that rotates by sucking and holding the substrate W in a horizontal posture, and a supply nozzle 72 that supplies a coating liquid for the resist cover film to the substrate W held on the spin chuck 71. As a coating solution for the resist cover film, a material having a low affinity with the resist and water (a material having low reactivity with the resist and water) can be used. For example, a fluororesin. The coating unit COV forms a resist cover film on the resist film formed on the substrate W by applying a coating liquid onto the substrate W while rotating the substrate W.

  In the substrate inspection section 235 (see FIG. 1) of the inspection block 13, a line width measuring device CD, an overlay measuring device OL, and a macro defect inspecting device MAC are stacked one above the other. The line width measuring device CD is an inspection device that measures the line width of the pattern formed on the substrate W. The overlay measuring instrument OL is an inspecting instrument that measures the deviation of the pattern formed on the substrate W. The macro defect inspection device MAC is an inspection device that determines whether or not there is a relatively large defect (for example, adhesion of dust or the like) existing on the substrate W.

  In the development processing unit 240 (see FIG. 1) of the development processing block 14, five development processing units DEV are stacked one above the other. Each development processing unit DEV includes a spin chuck 81 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 82 that supplies the developer to the substrate W held on the spin chuck 81.

  In the resist cover film removal processing unit 250 (see FIG. 1) of the resist cover film removal block 15, three removal units REM are vertically stacked. Each removal unit REM includes a spin chuck 91 that rotates while adsorbing and holding the substrate W in a horizontal posture, and a supply nozzle 92 that supplies a peeling liquid (for example, a fluororesin) to the substrate W held on the spin chuck 91. The removal unit REM removes the resist cover film formed on the substrate W by applying a stripping solution onto the substrate W while rotating the substrate W.

  The method for removing the resist cover film in the removal unit REM is not limited to the above example. For example, the resist cover film may be removed by supplying a stripping solution onto the substrate W while moving the slit nozzle above the substrate W.

  In the interface block 16, two edge exposure units EEW, a return buffer unit RBF, and substrate platforms PASS15 and PASS16 are stacked one above the other, and a seventh central robot CR7 (see FIG. 1) and interface transport A mechanism IFR is arranged. Each edge exposure unit EEW includes a spin chuck 98 that rotates by attracting and holding the substrate W in a horizontal posture, and a light irradiator 99 that exposes the periphery of the substrate W held on the spin chuck 98.

  FIG. 3 is a side view of the substrate processing apparatus 500 of FIG. 1 viewed from the −X direction.

  Two cooling units (cooling plates) CP are stacked one above the other in the antireflection film heat treatment section 100 of the antireflection film processing block 10, and four heating units are disposed in the antireflection film heat treatment section 101. (Hot plate) HP and two cooling units CP are stacked one above the other. Further, in the heat treatment units 100 and 101 for the antireflection film, local controllers LC for controlling the temperatures of the cooling unit CP and the heating unit HP are arranged at the top.

  In the resist film heat treatment section 110 of the resist film processing block 11, four cooling units CP are vertically stacked, and in the resist film heat treatment section 111, four heating units HP are vertically stacked. The In addition, in the resist film heat treatment units 110 and 111, local controllers LC for controlling the temperatures of the cooling unit CP and the heating unit HP are respectively arranged at the top.

  In the resist cover film heat treatment section 120 of the resist cover film processing block 12, four cooling units CP are vertically stacked, and in the resist cover film heat treatment section 121, four heating units HP are vertically arranged. Laminated. In addition, in the resist cover film heat treatment sections 120 and 121, local controllers LC for controlling the temperatures of the cooling unit CP and the heating unit HP are arranged at the top.

  A film thickness measuring device THI and a film quality measuring device QUA are vertically stacked on the substrate inspection unit 230 of the inspection block 13. The film thickness measuring device THI is an inspection device that measures the film thickness of the antireflection film, resist film, and resist cover film formed on the substrate W. The film quality measuring device QUA is an inspection device that measures the film quality of the resist film formed on the substrate W (for example, the amount of residual solvent in the film, the density of the resist film (the ratio of solute to solvent)).

  In the development heat treatment section 140 of the development processing block 14, four cooling units CP are vertically stacked, and in the development heat treatment section 141, four heating units HP are vertically stacked. Further, in the development heat treatment units 140 and 141, local controllers LC for controlling the temperatures of the cooling unit CP and the heating unit HP are respectively arranged at the top.

  In the post-exposure bake heat treatment section 150 of the resist cover film removal block 15, two heating units HP and two cooling units CP are stacked one above the other. The unit HP, one cooling unit CP, the substrate platforms PASS13 and PASS14, and one cooling unit CP are stacked one above the other. Further, in the post-exposure bake heat treatment parts 150 and 151, local controllers LC for controlling the temperatures of the heating unit HP and the cooling unit CP are respectively arranged at the top.

  Next, the operation of the substrate processing apparatus 500 according to this embodiment will be described.

  On the carrier mounting table 40 of the indexer block 9, a carrier C that stores a plurality of substrates W in multiple stages is loaded. The indexer robot IR takes out the unprocessed substrate W stored in the carrier C using the hand IRH. Thereafter, the indexer robot IR rotates in the ± θ direction while moving in the ± X direction, and transfers the unprocessed substrate W to the substrate platform PASS1.

  In the present embodiment, a front opening unified pod (FOUP) is adopted as the carrier C. However, the present invention is not limited to this, and an OC (open cassette) that exposes the standard mechanical interface (SMIF) pod and the storage substrate W to the outside air. ) Etc. may be used. Further, the indexer robot IR, the first to seventh center robots CR1 to CR7, and the interface transport mechanism IFR are each provided with a direct-acting transport robot that slides linearly with respect to the substrate W and moves the hand back and forth. Although it is used, the present invention is not limited to this, and an articulated transfer robot that linearly moves the hand forward and backward by moving the joint may be used.

  The unprocessed substrate W transferred to the substrate platform PASS1 is received by the first central robot CR1 of the antireflection film processing block 10. The first center robot CR1 carries the substrate W into the antireflection film heat treatment unit 100. Thereafter, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment unit 100 and carries it into the antireflection film application processing unit 200. In the antireflection film coating processing unit 200, an antireflection film is applied and formed on the substrate W by the coating unit BARC in order to reduce standing waves and halation that occur during exposure.

  Thereafter, the first central robot CR1 takes out the substrate W that has been coated from the coating processing unit 200 for antireflection film, and carries it into the thermal processing units 100 and 101 for antireflection film. Next, the first central robot CR1 takes out the heat-treated substrate W from the antireflection film heat treatment units 100 and 101 and transfers it to the substrate platform PASS3.

  The substrate W transferred to the substrate platform PASS3 is received by the second central robot CR2 of the resist film processing block 11. The second center robot CR2 carries the substrate W into the resist film heat treatment section 110. Thereafter, the first central robot CR2 takes out the heat-treated substrate W from the resist film heat treatment section 110 and carries it into the resist film coating treatment section 210. In the resist film application processing unit 210, a resist film is applied and formed on the substrate W on which the antireflection film is applied and formed by the application unit RES.

  Thereafter, the second central robot CR2 takes out the coated substrate W from the resist film coating processing section 210 and carries it into the resist film heat processing sections 110 and 111. Next, the second central robot CR2 takes out the heat-treated substrate W from the resist film heat treatment units 110 and 111 and transfers it to the substrate platform PASS5.

  The substrate W transferred to the substrate platform PASS5 is received by the third central robot CR3 of the resist cover film processing block 12. The third central robot CR3 carries the substrate W into the resist cover film heat treatment section 120. Thereafter, the third central robot CR3 takes out the heat-treated substrate W from the resist cover film heat treatment section 120 and carries it into the resist cover film coating processing section 220. In the resist cover film coating processing section 220, a resist cover film is applied and formed on the substrate W on which the resist film has been applied and formed by the coating unit COV.

  Thereafter, the third central robot CR3 takes out the coated substrate W from the resist cover film coating processing section 220 and carries it into the resist cover film heat treatment sections 120 and 121. Next, the third central robot CR3 takes out the heat-treated substrate W from the resist cover film heat treatment parts 120 and 121 and transfers it to the substrate platform PASS7.

  The substrate W transferred to the substrate platform PASS7 is received by the fourth central robot CR4 of the inspection block 13. The fourth central robot CR4 carries the substrate W into the substrate inspection unit 230. In the substrate inspection unit 230, as described above, the film thickness measuring device THI measures the film thickness of the antireflection film, the resist film, and the resist cover film, and the film quality measuring device QUA measures the film quality of the resist film. Is called. Thereafter, the fourth central robot CR4 takes out the measured substrate W from the substrate inspection unit 230 and transfers it to the substrate platform PASS9.

  The substrate W transferred to the substrate platform PASS9 is received by the fifth central robot CR5 of the development processing block 14. The fifth central robot CR5 transfers the substrate W to the substrate platform PASS11.

  The substrate W transferred to the substrate platform PASS11 is received by the sixth central robot CR6 of the resist cover film removal block 15. The sixth central robot CR6 transfers the substrate W to the substrate platform PASS13.

  The substrate W transferred to the substrate platform PASS13 is received by the hand CRH13 above the seventh central robot CR7 of the interface block 16. The seventh central robot CR7 carries the substrate W into the edge exposure unit EEW with the hand CRH13. In the edge exposure unit EEW, the peripheral portion of the substrate W is subjected to exposure processing.

  Next, the seventh central robot CR7 takes out the edge-exposed substrate W from the edge exposure unit EEW with the hand CRH13 and transfers it to the substrate platform PASS15.

  The substrate W transferred to the substrate platform PASS15 is carried into the exposure device 17 by the hand H5 of the interface transport mechanism IFR. After the exposure processing is performed on the substrate W in the exposure device 17, the interface transport mechanism IFR transfers the substrate W to the PASS 16 by the hand H6. The details of the interface transport mechanism IFR will be described later.

  The substrate W transferred to the substrate platform PASS16 is received by the hand CRH14 below the seventh central robot CR7 of the interface block 16. The seventh central robot CR7 carries the substrate W into the post-exposure baking heat treatment section 151 of the resist cover film removal block 15 by the hand CRH14. In the post-exposure baking heat treatment section 151, post-exposure baking (PEB) is performed on the substrate W. Thereafter, the seventh central robot CR7 takes out the substrate W from the post-exposure bake heat treatment portion 151 by the hand CRH14 and transfers it to the substrate platform PASS14.

  In this embodiment, post-exposure baking is performed by the post-exposure bake heat treatment unit 151, but post-exposure bake may be performed by the post-exposure bake heat treatment unit 150.

  The substrate W transferred to the substrate platform PASS14 is received by the sixth central robot CR6 of the resist cover film removal block 15. The sixth central robot CR6 carries the substrate W into the resist cover film removal processing unit 250. In the resist cover film removal processing unit 250, the resist cover film is removed by the removal unit REM.

  Thereafter, the sixth central robot CR6 takes out the processed substrate W from the resist cover film removal processing unit 250 and transfers it to the substrate platform PASS12.

  If the resist cover film removal processing unit 250 temporarily cannot accept the substrate W due to a failure or the like, the return buffer unit of the interface block 16 is subjected to a heat treatment on the substrate W in the post-exposure baking heat treatment unit 151. The substrate W can be temporarily stored in the RBF.

  The substrate W transferred to the substrate platform PASS12 is received by the fifth central robot CR5 of the development processing block 14. The fifth central robot CR5 carries the substrate W into the development processing unit 240. In the development processing unit 240, the development processing unit DEV performs development processing on the substrate W, and a pattern is formed on the substrate W.

  Thereafter, the fifth central robot CR5 takes out the substrate W after the development processing from the development processing unit 240 and carries it into the development heat treatment units 140 and 141. Next, the fifth central robot CR5 takes out the substrate W after the heat treatment from the development heat treatment units 140 and 141 and transfers it to the substrate platform PASS10.

  The substrate W transferred to the substrate platform PASS10 is received by the fourth central robot CR4 of the inspection block 13. The fourth central robot CR4 carries the substrate W into the substrate inspection unit 235. In the substrate inspection unit 235, as described above, the line width measurement of the pattern on the substrate W, the measurement of the shift of the pattern, and the inspection of the defect are performed by the line width measuring device CD, the overlay measuring device OL, and the macro defect inspection device MAC. Done.

  Thereafter, the fourth central robot CR4 takes out the measured and inspected substrate W from the substrate inspection unit 235 and transfers it to the substrate platform PASS8. The substrate W transferred to the substrate platform PASS8 is transferred to the substrate platform PASS6 by the third central robot CR3 of the resist cover film processing block 12.

  The substrate W transferred to the substrate platform PASS6 is transferred to the substrate platform PASS4 by the second central robot CR2 of the resist film processing block 11. The substrate W transferred to the substrate platform PASS4 is transferred to the substrate platform PASS2 by the first central robot CR1 of the anti-reflection film processing block 10.

  The substrate W transferred to the substrate platform PASS2 is stored in the carrier C by the indexer robot IR of the indexer block 9. Thereby, each process of the board | substrate W in the substrate processing apparatus 500 is complete | finished.

  As described above, in the substrate processing apparatus 500 according to the present embodiment, the resist film formed on the substrate W in the resist cover film processing block 12 before the exposure process is performed on the substrate W in the exposure apparatus 17. A resist cover film is formed thereon. In this case, even if the substrate W comes into contact with the liquid in the exposure apparatus 17, the resist cover film prevents the resist film from coming into contact with the liquid, so that the resist components are prevented from eluting into the liquid. This prevents contamination in the exposure apparatus 17 and prevents resist components from remaining on the surface of the substrate W. As a result, processing defects of the substrate W that occur in the exposure apparatus 17 can be reduced.

  Further, before the development processing is performed on the substrate W in the development processing block 14, the resist cover film is removed in the resist cover film removal block 15. In this case, since the resist cover film is reliably removed before the development processing, the development processing can be performed reliably.

  In the development processing unit DEV of the development processing block 14, the resist cover film removal block 15 may not be provided when a liquid capable of removing the resist cover film is used as the developer. In this case, the substrate processing apparatus 500 can be downsized.

  In the present embodiment, the processing conditions are determined based on the measurement results and inspection results of the film thickness measuring instrument THI, film quality measuring instrument QUA, line width measuring instrument CD, overlay measuring instrument OL, and macro defect inspecting instrument MAC. By adjusting, the measurement result can be reflected in each process. Thereby, processing defects of the substrate W can be reduced.

  FIG. 4 is a block diagram showing an example of the configuration of the control system based on the measurement result and the inspection result. Measurement results and inspection results of the film thickness measuring device THI, film quality measuring device QUA, line width measuring device CD, overlay measuring device OL, and macro defect inspection device MAC are transmitted to the main controller 30. In the main controller 30, items for adjusting the processing conditions are selected based on the measurement result and the inspection result, and the coating unit BARC, RES, COV, the development processing unit DEV, the removal unit REM, the heating unit HP, and the cooling unit CP are selected. The processing conditions are adjusted accordingly.

  For example, when adjusting the processing conditions based on the film thickness of the resist cover film measured by the film thickness measuring device THI, the spin rotation speed, the rotation time, the coating amount of the coating liquid, the coating liquid temperature in the coating unit COV, Atmospheric temperature, humidity, atmospheric pressure, and the like are feedback controlled.

  If an abnormality is found in the measurement results or inspection results of the film thickness measuring instrument THI, the film quality measuring instrument QUA, the line width measuring instrument CD, the overlay measuring instrument OL, or the macro defect inspecting instrument MAC, the substrate processing apparatus 500 The operation may be stopped or the operator may be notified by an alarm device.

  For example, when the film thickness of the resist cover film measured by the film thickness measuring instrument THI exceeds a preset upper limit value or falls below a lower limit value, the operation of the substrate processing apparatus 500 is stopped. Alternatively, the operator may be notified of the abnormality by an alarm device.

  In the present embodiment, film quality and film thickness are measured in the inspection block 13 after the resist cover film is formed. In this case, since the antireflection film, the resist film, and the resist cover film can be simultaneously inspected, the footprint of the substrate processing apparatus 500 can be reduced. In addition, since an abnormality in film thickness and film quality can be detected at an early stage, processing defects on the substrate W can be sufficiently reduced.

  Further, since the film thickness measuring device THI, the film quality measuring device QUA, the line width measuring device CD, the overlay measuring device OL, and the macro defect inspection device MAC are arranged in one processing block, the footprint of the substrate processing apparatus 500 Can be sufficiently reduced.

  Next, the interface transport mechanism IFR will be described. FIG. 5 is a diagram for explaining the configuration and operation of the interface transport mechanism IFR.

  First, the configuration of the interface transport mechanism IFR will be described. As shown in FIG. 5, the movable base 31 of the interface transport mechanism IFR is screwed onto the screw shaft 32. The screw shaft 32 is rotatably supported by the support base 33 so as to extend in the X direction. A motor M1 is provided at one end of the screw shaft 32. The motor M1 rotates the screw shaft 32, and the movable base 31 moves horizontally in the ± X directions.

  In addition, a hand support base 34 is mounted on the movable base 31 so that it can rotate in the ± θ direction and can be raised and lowered in the ± Z direction. The hand support base 34 is connected to a motor M2 in the movable base 31 via a rotating shaft 35, and the hand support base 34 is rotated by the motor M2. Two hands H5 and H6 that hold the substrate W in a horizontal posture are provided on the hand support base 34 so as to be able to advance and retract.

  Next, the operation of the interface transport mechanism IFR will be described. The operation of the interface transport mechanism IFR is controlled by the main controller 30 in FIG.

  First, the interface transport mechanism IFR rotates the hand support base 34 at the position A in FIG. 5 and raises it in the + Z direction to cause the upper hand H5 to enter the substrate platform PASS15. When the hand H5 receives the substrate W in the substrate platform PASS15, the interface transport mechanism IFR retracts the hand H5 from the substrate platform PASS15 and lowers the hand support base 34 in the −Z direction.

  Next, the interface transport mechanism IFR moves in the −X direction, rotates the hand support base 34 at the position B, and causes the hand H5 to enter the substrate carry-in portion 17a (see FIG. 1) of the exposure apparatus 17. After carrying the substrate W into the substrate carry-in portion 17a, the interface transport mechanism IFR moves the hand H5 backward from the substrate carry-in portion 17a.

  Next, the interface transport mechanism IFR causes the lower hand H6 to enter the substrate carry-out portion 17b (see FIG. 1) of the exposure apparatus 17. When the hand H6 receives the substrate W after the exposure processing in the substrate carry-out portion 17b, the interface transport mechanism IFR moves the hand H6 backward from the substrate carry-out portion 17b.

  Thereafter, the interface transport mechanism IFR moves in the + X direction, rotates the hand support base 34 at the position A and raises it in the + Z direction, causes the hand H6 to enter the substrate platform PASS16, and brings the substrate W into the substrate platform. Transfer to PASS16.

  When the exposure apparatus 17 cannot accept the substrate W when the substrate W is transported from the substrate platform PASS15 to the exposure apparatus 17, the substrate W is temporarily stored and stored in the sending buffer unit SBF.

  As described above, in the present embodiment, when transporting the substrate W from the substrate platform PASS15 to the exposure device 17, the hand H5 of the interface transport mechanism IFR is used, and the substrate W is transferred from the exposure device 17 to the substrate. The hand H6 is used when transporting to the placement unit PASS16. That is, the hand H6 is used for transporting the substrate W to which the liquid immediately after the exposure processing is attached, and the hand H5 is used for transporting the substrate W to which the liquid before the exposure processing is not attached. Therefore, the liquid of the substrate W does not adhere to the hand H5.

  Since the hand H6 is provided below the hand H5, even if the liquid falls from the hand H6 and the substrate W held by the hand H6, the liquid does not adhere to the hand H5 and the substrate W held by the hand H6. .

  Further, as described above, in the seventh central robot CR7 as well, the lower side is not used for transporting the substrate W to which the liquid after exposure processing adheres (between the substrate platform PASS16 and the post-exposure baking heat treatment unit 151). The hand CRH14 is used to transport the substrate W to which the liquid before the exposure process is not attached (between the substrate platform PASS13 and the edge exposure unit EEW and between the edge exposure unit EEW and the substrate platform PASS15). The upper hand CRH13 is used. Therefore, even in the seventh central robot CR7, no liquid adheres to the substrate W before the exposure process.

  As a result, since the liquid is prevented from adhering to the substrate W before the exposure processing, the contamination of the substrate W due to the adhesion of dust or the like in the atmosphere can be prevented and the contamination in the exposure apparatus 17 can be sufficiently prevented. Can be prevented. Thereby, it is possible to sufficiently prevent the processing defect of the substrate W in the exposure apparatus 17 from occurring.

  In this embodiment, the substrate W is transported by one interface transport mechanism IFR, but the substrate W may be transported by using a plurality of interface transport mechanisms IFR.

  Further, the operation and configuration of the interface transport mechanism IFR may be changed according to the positions of the substrate carry-in portion 17a and the substrate carry-out portion 17b of the exposure apparatus 17. For example, when the substrate carry-in portion 17a and the substrate carry-out portion 17b of the exposure apparatus 17 are at positions facing the position A in FIG. 5, the screw shaft 32 in FIG.

  In addition, coating unit BARC, RES, COV, development processing unit DEV, removal unit REM, heating unit HP, cooling unit CP, film thickness measuring device THI, film quality measuring device QUA, line width measuring device CD, overlay measuring device OL, and The number of macro defect inspectors MAC may be appropriately changed according to the processing speed of each processing block.

  In the present embodiment, the antireflection film, the resist film, and the resist cover film are measured at the same time, but may be performed for each film formation process. That is, the thickness of the antireflection film may be measured before forming the resist film, and the thickness of the resist film may be measured before forming the resist cover film.

  In the present embodiment, an indexer block 9, an antireflection film processing block 10, a resist film processing block 11, a resist cover film processing block 12, an inspection block 13, a development processing block 14, and a resist cover film removal block 15 are provided. The interface block 16 corresponds to a transfer unit, the coating unit RES corresponds to a first processing unit, the resist film processing block 11 corresponds to a first processing unit, and the coating unit COV corresponds to a first processing unit. The resist cover film processing block 12 corresponds to the second processing unit, the film thickness measuring device THI corresponds to the first inspection unit, and the inspection block 13 corresponds to the inspection processing unit. The coating unit BARC corresponds to the third processing unit, and the antireflection film processing block 10 is the third processing unit. It corresponds to a physical unit, the coating unit DEV corresponds to a fourth processing unit, the development processing block 14 corresponds to a fourth processing unit, the removal unit REM corresponds to a fifth processing unit, and the resist cover film removal Block 15 corresponds to a fifth processing unit, the resist film corresponds to a photosensitive film, and the resist cover film corresponds to a protective film.

  The heating unit HP and the cooling unit CP correspond to the first to fourth heat treatment units, the second center robot CR2 corresponds to the first transfer unit, and the third center robot CR3 corresponds to the second transfer unit. The fourth center robot CR4 corresponds to the inspection transfer unit, the first center robot CR1 corresponds to the third transfer unit, and the fifth center robot CR5 corresponds to the fourth transfer unit. The sixth center robot CR6 corresponds to the fifth transfer unit, the seventh center robot CR7 corresponds to the sixth transfer unit, the interface transfer mechanism IFR corresponds to the seventh transfer unit, and the hand CRH13. Corresponds to the first holding means, the hand CRH14 corresponds to the second holding means, and the hand H5 corresponds to the third holding means. , The hand H6 corresponds to a fourth holding means, corresponding to the part substrate platform PASS15,16 the mounting.

  The film quality measuring device QUA corresponds to the second inspection unit, the line width measuring device CD corresponds to the third inspection unit, the overlay measuring device OL corresponds to the fourth inspection unit, and the macro defect inspection device. MAC corresponds to the fifth inspection unit.

  The present invention can be used for processing various substrates.

1 is a schematic plan view of a substrate processing apparatus according to a first embodiment of the present invention. It is the side view which looked at the substrate processing apparatus of Drawing 1 from the + X direction. It is the side view which looked at the substrate processing apparatus of Drawing 1 from the -X direction. It is a block diagram which shows an example of a structure of the control system based on a measurement result and a test result. It is a figure for demonstrating a structure and operation | movement of the conveyance mechanism for interfaces.

Explanation of symbols

DESCRIPTION OF SYMBOLS 9 Indexer block 10 Processing block for antireflection film 11 Processing block for resist film 12 Processing block for resist cover film 13 Inspection block 14 Development block 15 Resist cover film removal block 16 Interface block 17 Exposure apparatus 40 Carrier mounting table 200 For antireflection film Coating processing section 210 Resist film coating processing section 220 Resist cover film coating processing section 230, 235 Substrate inspection section 240 Development processing section 250 Resist cover film removal processing section 100, 101 Antireflection film heat treatment section 110, 111 Resist film Heat treatment section 120, 121 heat treatment section for resist cover film 140, 141 heat treatment section for development 150, 151 post-exposure bake heat treatment section 500 substrate processing apparatus THI film thickness measuring device QUA film quality measuring device CD line width measuring device L Overlay measuring device MAC Macro defect inspection device CR1 First center robot CR2 Second center robot CR3 Third center robot CR4 Fourth center robot CR5 Fifth center robot CR6 Sixth center robot CR7 Seventh Center robot EEW Edge exposure unit IR Indexer robot IFR Interface transport mechanism W Substrate PASS1 to PASS16 Substrate placement unit

Claims (19)

A substrate processing apparatus disposed adjacent to an exposure apparatus,
A processing unit for processing the substrate;
A transfer unit provided adjacent to one end of the processing unit for transferring a substrate between the processing unit and the exposure apparatus;
The processor is
A first processing unit for forming a photosensitive film made of a photosensitive material on a substrate;
A second processing unit for forming a protective film for protecting the photosensitive film on the substrate after the formation of the photosensitive film by the first processing unit and before the exposure processing by the exposure apparatus;
A substrate processing apparatus comprising: a first inspection unit that measures a thickness of the protective film after the formation of the protective film by the second processing unit and before the exposure processing by the exposure apparatus. The substrate processing apparatus according to claim 1, wherein the first inspection unit further measures a film thickness of the photosensitive film. 3. The substrate processing apparatus according to claim 1, further comprising a control unit that controls processing conditions in the processing unit based on a measurement result of the first inspection unit. The processor is
A first processing unit including the first processing unit, a first heat processing unit for performing heat treatment on the substrate, and a first transport unit for transporting the substrate;
A second processing unit including the second processing unit, a second heat treatment unit for performing heat treatment on the substrate, and a second transport unit for transporting the substrate;
The substrate processing apparatus according to claim 1, further comprising an inspection processing unit including an inspection transport unit that transports the first inspection unit and the substrate. 4. The method according to claim 1, wherein the processing unit further includes a third processing unit that forms an antireflection film on the substrate before the photosensitive film is formed by the first processing unit. 5. The substrate processing apparatus as described. The substrate processing apparatus according to claim 5, wherein the first inspection unit further measures a film thickness of the antireflection film. The processor is
A first processing unit including the first processing unit, a first heat processing unit for performing heat treatment on the substrate, and a first transport unit for transporting the substrate;
A second processing unit including the second processing unit, a second heat treatment unit for performing heat treatment on the substrate, and a second transport unit for transporting the substrate;
An inspection processing unit including the first inspection unit and an inspection transport unit for transporting the substrate;
7. The substrate according to claim 5, further comprising: a third processing unit including a third processing unit, a third thermal processing unit that performs thermal processing on the substrate, and a third transport unit that transports the substrate. Processing equipment. The substrate processing apparatus according to claim 1, wherein the processing unit further includes a fourth processing unit that performs development processing on the substrate after the exposure processing by the exposure apparatus. The processor is
A first processing unit including the first processing unit, a first heat processing unit for performing heat treatment on the substrate, and a first transport unit for transporting the substrate;
A second processing unit including the second processing unit, a second heat treatment unit for performing heat treatment on the substrate, and a second transport unit for transporting the substrate;
An inspection processing unit including the first inspection unit and an inspection transport unit for transporting the substrate;
9. The substrate processing apparatus according to claim 8, further comprising: a fourth processing unit including the fourth processing unit, a fourth thermal processing unit that performs thermal processing on the substrate, and a fourth transport unit that transports the substrate. . 9. The processing unit according to claim 8, further comprising a fifth processing unit for removing the protective film after the exposure processing by the exposure apparatus and before the development processing by the fourth processing unit. Substrate processing equipment. The processor is
A first processing unit including the first processing unit, a first heat processing unit for performing heat treatment on the substrate, and a first transport unit for transporting the substrate;
A second processing unit including the second processing unit, a second heat treatment unit for performing heat treatment on the substrate, and a second transport unit for transporting the substrate;
An inspection processing unit including the first inspection unit and an inspection transport unit for transporting the substrate;
A fourth processing unit including the fourth processing unit, a fourth heat treatment unit for performing heat treatment on the substrate, and a fourth transport unit for transporting the substrate;
The substrate processing apparatus according to claim 10, further comprising a fifth processing unit including the fifth processing unit and a fifth transport unit that transports the substrate. 12. The substrate processing apparatus according to claim 9, wherein the inspection processing unit is disposed between the second processing unit and the fourth processing unit. The inspection processing unit is:
A second inspection unit for measuring the film quality of the photosensitive film; a third inspection unit for measuring a line width of a pattern formed on the substrate formed in the fourth processing unit; The substrate processing apparatus according to claim 9, 11 or 12, further comprising at least one of a fourth inspection unit for performing inspection and a fifth inspection unit for inspecting a defect on the substrate. The delivery unit is
A sixth processing unit for performing predetermined processing on the substrate;
A placement unit on which the substrate is temporarily placed;
A sixth transport unit for transporting a substrate between the processing unit, the sixth processing unit, and the placement unit;
The substrate processing apparatus according to claim 1, further comprising a seventh transport unit that transports the substrate between the placement unit and the exposure apparatus. The sixth transport unit includes first and second holding means for holding a substrate,
The sixth transport unit is
When transporting the substrate before the exposure processing by the exposure apparatus, the substrate is held by the first holding means,
When transporting the substrate after the exposure processing by the exposure apparatus, the substrate is held by the second holding means,
The seventh transport unit includes third and fourth holding means for holding the substrate,
The seventh transport unit is
When transporting the substrate before the exposure processing by the exposure apparatus, the substrate is held by the third holding means,
The substrate processing apparatus according to claim 14, wherein the substrate is held by the fourth holding unit when the substrate after the exposure processing by the exposure apparatus is transported. 16. The substrate according to claim 15, wherein the second holding means is provided below the first holding means, and the fourth holding means is provided below the third holding means. Processing equipment. The substrate processing apparatus according to claim 14, wherein the sixth processing unit includes an edge exposure unit that exposes a peripheral portion of the substrate. The substrate processing apparatus according to claim 1, wherein the protective film is made of a fluororesin. A method of processing a substrate in a substrate processing apparatus that is disposed adjacent to an exposure apparatus and includes a first processing unit, a second processing unit, and a first inspection unit,
Forming a photosensitive film made of a photosensitive material on a substrate by the first processing unit before the exposure processing by the exposure apparatus;
Forming a protective film for protecting the photosensitive film on the substrate by the second processing unit after the formation of the photosensitive film by the first processing unit and before the exposure processing by the exposure apparatus;
And a step of measuring the film thickness of the photosensitive film by the first inspection unit after the formation of the protective film by the second processing unit and before the exposure processing by the exposure apparatus. Substrate processing method.

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