JP2005229008A - Printed wiring board and its manufacturing method - Google Patents

Printed wiring board and its manufacturing method Download PDF

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Publication number
JP2005229008A
JP2005229008A JP2004037777A JP2004037777A JP2005229008A JP 2005229008 A JP2005229008 A JP 2005229008A JP 2004037777 A JP2004037777 A JP 2004037777A JP 2004037777 A JP2004037777 A JP 2004037777A JP 2005229008 A JP2005229008 A JP 2005229008A
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region
wiring layer
connection terminal
inner lead
semiconductor element
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JP4333395B2 (en
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Toshio Ofusa
俊雄 大房
Yutaka Yoshikawa
吉川  裕
Akihisa Takahashi
明久 高橋
Yasutaka Meiraku
泰孝 明楽
Toshiaki Ishii
俊明 石井
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Toppan Inc
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Toppan Printing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a printed wiring board which can readily reproduce fine patterns, even if copper foil of ordinary thickness is used by setting the prescribed region of a wiring layer between solder ball connection terminals and between lands, an inner lead and a connection terminal for a semiconductor element as a fined region, by applying thin-film treatment for the film thickness on this region, and to provide its manufacturing method. <P>SOLUTION: The printed board is formed, by forming the solder ball connection terminal, the land, the wiring layer, the inner lead and the connection terminal for a semiconductor element or the like on an insulating base material. The region, wherein the wiring layer between the connection terminals for a solder ball and between the lands, the inner lead and the connection terminal for a semiconductor element are constituted of a finer pattern than other wiring layers, is set as a fined region. The film thickness and line width of the wiring layer, the inner lead and the connection terminal for a semiconductor element of the fined region are formed thinner and finer than the film thickness of a wiring layer, except for the fined region in the printed wiring board. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、各種電子機器用半導体装置を作製するための微細配線を有するプリント配線板に関する。   The present invention relates to a printed wiring board having fine wirings for manufacturing semiconductor devices for various electronic devices.

従来のプリント配線板は、同一配線層内において均一な厚みの配線層と接続端子を備えたもので、均一な厚みの銅箔をエッチングするかめっきによってほぼ均一な厚みの配線層を形成する。また、接続端子部のみに貴金属めっきを施して数μmの厚みの差を設けたものも一般的であるが、配線層及び接続端子を形成している銅等からなる導体層自体の厚みは基本的には同じである。   A conventional printed wiring board includes a wiring layer having a uniform thickness and connection terminals in the same wiring layer, and a wiring layer having a substantially uniform thickness is formed by etching a copper foil having a uniform thickness or plating. Also, it is common that only the connection terminal part is plated with noble metal to provide a thickness difference of several μm. However, the thickness of the conductor layer itself made of copper or the like forming the wiring layer and the connection terminal is basic. The same is true.

また、最近では半導体素子接続端子部の厚みを薄く形成したものや、多層配線基板の層間接続用ランドの接合性を改善する目的で該ランドに凹部を形成するものが提案されている(例えば、特許文献1、特許文献2、特許文献3及び特許文献4参照。)。   Recently, a semiconductor element connection terminal portion formed with a thin thickness, or a structure in which a recess is formed in the land for the purpose of improving the bondability of an interlayer connection land of a multilayer wiring board has been proposed (for example, (See Patent Document 1, Patent Document 2, Patent Document 3, and Patent Document 4.)

特許文献1は、COF用テープに関するもので、インナーリードの先端部を延長し、その先端部をリードより幅広の半導体素子接続端子を形成して、必要によりその高さを低く形成することで、半導体素子をフェイスダウンでボンディングする時の接続端子先端部の剥離防止と、接合領域のリード変形による接合不安定化防止と、ショート防止等を図っている。   Patent Document 1 relates to a tape for COF, by extending the tip of the inner lead, forming a semiconductor element connection terminal wider than the lead, and lowering the height if necessary. It is intended to prevent peeling of the tip of the connection terminal when bonding semiconductor elements face down, to prevent destabilization of bonding due to lead deformation in the bonding region, and to prevent short circuits.

特許文献2は、はんだバンプの接続を強化するために、はんだ接合パッドに球面状の凹部を設けたものである。   In Patent Document 2, in order to reinforce the connection of solder bumps, a spherical concave portion is provided on a solder joint pad.

特許文献3は、層間の配線層の電気的接続を導電バンプの圧着接合にて行う多層配線基板において、多層配線基板の層間接続を確実にするため、配線パターンの圧着接合領域に、圧着接合面よりも小さなバンプ接合凹部を設けたものである。   Patent Document 3 discloses that in a multilayer wiring board in which electrical connection of interlayer wiring layers is performed by pressure bonding of conductive bumps, a crimp bonding surface is provided in the pressure bonding area of the wiring pattern in order to ensure interlayer connection of the multilayer wiring board. Smaller bump bonding recesses are provided.

特許文献4は、接続パッドの引出し線の一部に凹部を形成し、該凹部とその近傍を補強膜で覆っているので、ICチップをフリップチップ方式により搭載する場合溶融したはんだは表面張力により接続パッド上に溜められ接続パッドから引き出し線への流出が防止され、接続パッド及びその近傍の引き出し線の機械的強度を高めることができるとしている。
特開2003−249592号公報 特開2002−290022号公報 特開2002−252467号公報 特開平7−142849号公報
In Patent Document 4, a recess is formed in a part of the lead line of the connection pad, and the recess and its vicinity are covered with a reinforcing film. Therefore, when the IC chip is mounted by a flip chip method, the molten solder is caused by surface tension. The connection pad is prevented from flowing out from the connection pad to the lead wire, and the mechanical strength of the connection pad and the lead wire in the vicinity thereof can be increased.
Japanese Patent Laid-Open No. 2003-249592 JP 2002-290022 A JP 2002-252467 A Japanese Patent Laid-Open No. 7-142849

従来のプリント配線板の製造技術では、配線層とインナーリード及び半導体素子用接続端子は同じ厚みの銅箔であるため、ファインパターン形成部とそうでないところを同じ条件で製造しなければならなず、パターン形成用原版のデザインを品種に合わせて最適化す
る必要があった。しかし、ファイン化が進展して配線層のピッチが50μmピッチから40μmピッチにファイン化すると、ファインなパターンに合わせて、薄い銅箔を選定してする方法が一般的になってきた。
In the conventional printed wiring board manufacturing technology, the wiring layer, the inner lead, and the connection terminal for the semiconductor element are made of copper foil having the same thickness, so the fine pattern forming part and the other part must be manufactured under the same conditions. Therefore, it was necessary to optimize the design of the original plate for pattern formation according to the product type. However, as finer processing advances and the pitch of the wiring layer is refined from 50 μm pitch to 40 μm pitch, a method of selecting a thin copper foil in accordance with a fine pattern has become common.

例えば、通常使用する銅箔18μmに対し、パターンピッチ、線幅によって15μm銅箔を使用したり、12μm銅箔を使用したり、場合によっては9μm銅箔を使用するといった対応が必要となってくる。銅箔厚の異なる材料が数種類存在すると、間違えて使用する可能性が高く、サイズの違いなどを含めると種類は膨大となり、その調達と保管管理が大変になる。そのため、材料の種類を減らすことが求められている。   For example, it is necessary to use a 15 μm copper foil, a 12 μm copper foil, or a 9 μm copper foil depending on the pattern pitch and line width with respect to a commonly used copper foil of 18 μm. . If there are several types of materials with different copper foil thicknesses, there is a high possibility that they will be used by mistake, and if the differences in size are included, the types will become enormous, making procurement and storage management difficult. Therefore, it is required to reduce the types of materials.

そして、銅箔の厚みを変えて製造しなければならないような難度の高い配線層は、エッチング時のサイドエッチ量の調整やセリフなどのダミーパターンをその品種に合わせて最適化する必要があり、それには配線パターン形成用のマスク製作と試作による実際の配線層の仕上がり測定を数回に渡って繰り返す必要があり、最初の試作から量産までの期間が長くなる傾向にあった。   And it is necessary to optimize the dummy pattern such as adjustment of side etch amount at the time of etching and serif etc. for the wiring layer with high difficulty that has to be manufactured by changing the thickness of the copper foil, For this purpose, it is necessary to repeat the fabrication of the mask for forming the wiring pattern and the actual measurement of the finished wiring layer by the trial production several times, and the period from the first trial production to the mass production tends to be long.

また、半導体素子用接続端子やハンダボール用接続端子では接続端子周辺部の配線にクラックが生じ易いため、接続とその後の使用に耐えられる強度が必要となっていた。しかし、ファインパターン形成部が存在すると、それに合わせた薄い銅箔を使用しなければならない。そうすると、はんだボール用接続端子の強度が十分に得られないという問題がある。   Further, since the connection terminals for the semiconductor elements and the connection terminals for the solder balls are likely to crack in the wiring around the connection terminals, the strength required to withstand connection and subsequent use is required. However, if a fine pattern forming portion exists, a thin copper foil corresponding to the fine pattern forming portion must be used. If it does so, there exists a problem that the intensity | strength of the connecting terminal for solder balls is not fully obtained.

本発明は上記問題点に鑑み考案されたもので、はんだボール用接続端子間及びランド間の配線層、インナーリード及び半導体素子用接続端子の所定領域をファイン化領域と設定し、その領域の膜厚を薄膜化処理することにより、通常の厚さの銅箔を用いても微細パターンを容易に再現できるプリント配線板及びその製造方法を提供することを目的とする。   The present invention has been devised in view of the above problems, and a predetermined region of a wiring layer between solder ball connection terminals and between lands, an inner lead and a connection terminal for a semiconductor element is set as a refined region, and a film in the region is formed. An object of the present invention is to provide a printed wiring board capable of easily reproducing a fine pattern even when a copper foil having a normal thickness is used by thinning the thickness, and a manufacturing method thereof.

本発明は、上記課題を達成するために、まず請求項1においては、絶縁基材上にはんだボール用接続端子、ランド、配線層、インナーリード及び半導体素子用接続端子等が形成されてなるプリント配線板であって、前記はんだボール用接続端子間及び前記ランド間の配線層、インナーリード及び半導体素子用接続端子が他の配線層よりも微細パターンで構成されている領域をファイン化領域と設定し、前記ファイン化領域の配線層、インナーリード及び半導体素子用接続端子の膜厚及び線幅がファイン化領域以外の配線層の膜厚よりも薄く、かつ細く形成されていることを特徴とするプリント配線板としたものである。   In order to achieve the above object, according to the first aspect of the present invention, in claim 1, a solder ball connection terminal, a land, a wiring layer, an inner lead, a semiconductor element connection terminal, and the like are formed on an insulating substrate. An area in which the wiring layers between the solder ball connection terminals and between the lands, the inner leads, and the connection terminals for semiconductor elements are configured with a finer pattern than the other wiring layers is set as a refinement area. Further, the film thickness and the line width of the wiring layer, the inner lead, and the connection terminal for the semiconductor element in the fine region are thinner and thinner than the film thickness of the wiring layer other than the fine region. It is a printed wiring board.

また、請求項2においては、少なくとも絶縁基材上に、ランド、はんだボール用接続端子、配線層、インナーリード及びインナーリードの先端部に半導体素子用接続端子を形成する工程と、前記ランド間の配線層、前記はんだボール用接続端子間の配線層、インナーリード、半導体素子用接続端子の所定領域をファイン化領域に設定する工程と、前記ファイン化領域を除く領域にレジストパターンを形成する工程と、前記レジストパターンをマスクにしてファイン化領域の配線層、インナーリード、半導体素子用接続端子を所定量エッチングする工程とを有することを特徴とする請求項1に記載のプリント配線板の製造方法としたものである。   According to a second aspect of the present invention, there is provided a step of forming a semiconductor element connection terminal at least on an insulating base material, on a land, a solder ball connection terminal, a wiring layer, an inner lead, and a tip portion of the inner lead; A step of setting a predetermined region of the wiring layer, the wiring layer between the solder ball connection terminals, the inner lead, and the connection terminal for the semiconductor element as a refined region; and a step of forming a resist pattern in a region excluding the refined region; 2. The method of manufacturing a printed wiring board according to claim 1, further comprising: etching a predetermined amount of a wiring layer, an inner lead, and a semiconductor element connection terminal in a finer region using the resist pattern as a mask. It is a thing.

本発明のプリント配線板は、微細パターンが部分的に存在しても、パターン形成用原版のデザインを品種に合わせて最適化する必要がなくなり、試作から量産までの期間を大幅に短縮することができる。そして、微細パターンのファイン化が更に進展してもパターンに合わせた薄い銅箔を選定する必要もなくなる。   The printed wiring board of the present invention eliminates the need to optimize the design of the pattern forming original plate according to the product type even if a fine pattern is partially present, and can greatly shorten the period from trial production to mass production. it can. And even if fine pattern refinement further progresses, it becomes unnecessary to select a thin copper foil in accordance with the pattern.

また、銅箔厚の微妙に異なる材料を何種類も用意する必要がなくなるため、材料を間違えて使用する可能性がなくなり、材料の調達と保管管理が容易になった。   In addition, since it is not necessary to prepare several kinds of materials with slightly different copper foil thicknesses, there is no possibility of using the materials by mistake, and the procurement and storage management of the materials are facilitated.

図1(a)には、本発明のプリント配線板の一実施例を示す部分模式平面図を、図1(b)には、図1(a)の模式平面図をA−A’線で切断した模式構成断面図を、図1(c)には、図1(a)の模式平面図をB−B’線で切断した模式構成断面図をそれぞれ示す。図1(a)のプリント配線板は、請求項1に係るプリント配線板の一実施例を示すもので、絶縁性樹脂フィルムからなる絶縁基材11にはんだボール用接続端子もしくはランド間に複数の配線層を配設したもので、はんだボール用接続端子もしくはランド23間の配線層22aがファイン化領域と設定されており、この配線層22aは、他の配線層22より、薄く、かつ細く形成されている。   FIG. 1A is a partial schematic plan view showing an embodiment of the printed wiring board of the present invention, and FIG. 1B is a schematic plan view of FIG. FIG. 1 (c) shows a cut schematic configuration cross-sectional view, and FIG. 1 (c) shows a schematic configuration cross-sectional view of the schematic plan view of FIG. 1 (a) cut along the line BB ′. The printed wiring board of FIG. 1 (a) shows an embodiment of the printed wiring board according to claim 1, and a plurality of solder ball connecting terminals or lands are provided on an insulating base material 11 made of an insulating resin film. A wiring layer is provided, and a wiring layer 22a between solder ball connection terminals or lands 23 is set as a finer region. The wiring layer 22a is thinner and thinner than the other wiring layers 22. Has been.

図4(a)には、本発明のプリント配線板の他の実施例を示す半導体装置用基板の模式平面図を、図4(b)には、図4(a)の模式平面図をC−C’線で切断した模式構成断面図を、図4(c)には、図4(a)の模式平面図をD−D’線で切断した模式構成断面図を、図5(a)には、半導体装置用基板の途中工程の模式平面図を、図5(b)には、図5(a)の模式平面図をC−C’線で切断した模式構成断面図を、図5(c)には、図5(a)の模式平面図をD−D’線で切断した模式構成断面図をそれぞれ示す。   4A is a schematic plan view of a substrate for a semiconductor device showing another embodiment of the printed wiring board of the present invention, and FIG. 4B is a schematic plan view of FIG. 4A. 4C is a schematic cross-sectional view taken along the line -C '. FIG. 4C is a schematic cross-sectional view taken along the line DD' shown in FIG. FIG. 5B is a schematic plan view of the semiconductor device substrate, FIG. 5B is a schematic cross-sectional view of the schematic plan view of FIG. (C) is a schematic cross-sectional view of the schematic plan view of FIG. 5 (a) cut along the line DD ′.

図4(a)の半導体装置用基板は、請求項1に係るプリント配線板の他の実施例を示すもので、絶縁性樹脂フィルムからなる絶縁基材11に、デバイスホール15、はんだボール用接続端子26、インナーリード24a及びインナーリード24aの先端部に半導体素子用接続端子24bを形成したもので、図5(a)に示すように、インナーリード24a及び半導体素子用接続端子24bがファイン化領域と設定されており、このファイン化領域のインナーリード22a及び半導体素子用接続端子24bは、他の配線層よりも薄く、かつ細く形成されている。   The semiconductor device substrate of FIG. 4A shows another embodiment of the printed wiring board according to claim 1, and a device hole 15 and a solder ball connection are formed on an insulating base material 11 made of an insulating resin film. The terminal 26, the inner lead 24a, and the inner lead 24a are formed with a semiconductor element connection terminal 24b at the tip thereof. As shown in FIG. 5A, the inner lead 24a and the semiconductor element connection terminal 24b are formed in a fine region. The inner lead 22a and the semiconductor element connection terminal 24b in the refined region are formed thinner and thinner than the other wiring layers.

本発明の請求項2に係るプリント配線板の製造方法は、絶縁性樹脂フィルムからなる絶縁基材11上に、ランド、はんだボール用接続端子、配線層、インナーリード及び半導体素子用接続端子等を公知のプロセスで形成し、配線層、インナーリード及び半導体素子用接続端子の所定領域をファイン化領域に設定し、ファイン化領域を除く領域をレジストパターンでマスキングし、ファイン化領域に設定された配線層、インナーリード及び半導体素子用接続端子を所定量エッチングすることにより、他の配線層よりも薄くて、細い配線層、インナーリード及び半導体素子用接続端子を形成するものである。   According to a second aspect of the present invention, there is provided a printed wiring board manufacturing method comprising: a land, a solder ball connection terminal, a wiring layer, an inner lead, and a semiconductor element connection terminal on an insulating substrate 11 made of an insulating resin film. Wiring that is formed by a known process, and the predetermined areas of the wiring layer, inner leads, and connection terminals for semiconductor elements are set as fine areas, and areas other than the fine areas are masked with a resist pattern. By etching a predetermined amount of the layer, the inner lead, and the semiconductor element connection terminal, a thinner wiring layer, the inner lead, and the semiconductor element connection terminal are formed which are thinner than the other wiring layers.

この結果、通常の配線パターンと微細パターンが混在したプリント配線板であっても、ファイン化領域の配線層、インナーリード及び半導体素子用接続端子は形状再現性に優れたものが得られる。   As a result, even in the case of a printed wiring board in which a normal wiring pattern and a fine pattern are mixed, the wiring layer, the inner lead, and the semiconductor element connection terminal in the refined region are excellent in shape reproducibility.

以下、図1(a)に示すプリント配線板の作製法について説明する。
図2(a)〜(g)及び図3(a)〜(g)に、本発明に係るプリント配線板の製造工程の模式構成断面図を示す。図2(a)〜(g)は図1(a)をA−A’線で切断した模式構成断面図、図3(a)〜(g)は図1(a)をB−B’線で切断した模式構成断面図を示す。
Hereinafter, a method for manufacturing the printed wiring board shown in FIG.
FIGS. 2A to 2G and FIGS. 3A to 3G are schematic cross-sectional views of manufacturing steps of the printed wiring board according to the present invention. 2 (a) to 2 (g) are schematic cross-sectional views of FIG. 1 (a) cut along the line AA ', and FIGS. 3 (a) to 3 (g) show FIG. 1 (a) along the line BB'. The schematic structure sectional drawing cut | disconnected by is shown.

まず、ポリイミドフィルム等からなる絶縁基材11に接着剤フィルムをラミネートする等の方法で接着剤層12を形成し、所定厚の銅箔21を接着剤層12上にラミネートして、銅箔21が積層された基材を作製する(図2(a)及び図3(a)参照)。   First, an adhesive layer 12 is formed by a method such as laminating an adhesive film on an insulating base material 11 made of a polyimide film or the like, a copper foil 21 having a predetermined thickness is laminated on the adhesive layer 12, and the copper foil 21 Is produced (see FIGS. 2A and 3A).

次に、銅箔21表面を洗浄後ドライフィルムをラミネートする等の方法で感光層を形成し、パターン露光、現像等の一連のパターニング処理を行って、レジストパターン31を形成する(図2(b)及び図3(b)参照)。   Next, a photosensitive layer is formed by a method such as laminating a dry film after cleaning the surface of the copper foil 21, and a series of patterning processes such as pattern exposure and development are performed to form a resist pattern 31 (FIG. 2B). ) And FIG. 3B).

次に、レジストパターン31をマスクにして銅箔21を塩化第2鉄溶液等のエッチング液を用いてスプレーエッチングし(図2(c)及び図3(c)参照)、専用の剥離液でレジストパターン31aを剥離処理し、絶縁基材11上に配線層22及びランド23を形成する(図2(d)及び図3(d)参照)。   Next, using the resist pattern 31 as a mask, the copper foil 21 is spray-etched using an etchant such as a ferric chloride solution (see FIGS. 2C and 3C), and the resist is removed using a special stripping solution. The pattern 31a is peeled off to form the wiring layer 22 and the land 23 on the insulating substrate 11 (see FIG. 2D and FIG. 3D).

次に、ランド23間に配設された配線層22の所定領域をファイン化領域に設定する(図1(a)参照)。
次に、配線層22及びランド23が形成された絶縁基材11上にドライフィルムをラミネートする等の方法で感光層を形成し、パターン露光、現像等の一連のパターニング処理を行って、図1(a)に示すファイン化領域を除く領域にレジストパターン32を形成する(図2(e)及び図3(e)参照)。
Next, a predetermined area of the wiring layer 22 disposed between the lands 23 is set as a fine area (see FIG. 1A).
Next, a photosensitive layer is formed by a method such as laminating a dry film on the insulating base material 11 on which the wiring layer 22 and the land 23 are formed, and a series of patterning processes such as pattern exposure and development are performed. A resist pattern 32 is formed in a region excluding the refined region shown in (a) (see FIGS. 2 (e) and 3 (e)).

次に、レジストパターン32をマスクにしてファイン化領域の配線層22を塩化第2鉄溶液等のエッチング液を用いて所定量エッチングし(図2(f)及び図3(f)参照)、専用の剥離液でレジストパターン32を剥離処理し、ランド23間に配線層22よりも薄く、かつ細く形成された配線層22aが形成されたプリント配線板を得る(図2(g)及び図3(g)及び図1(a)参照)。
ここで、ファイン化領域の配線層22をエッチングする際配線層22のパターン形状もテーパー形状が緩和され、テーパー形状が無くなり、配線層22a間の絶縁性も改善される。
また、ファイン化領域のエッチング量は銅箔の厚さ及びパターンピッチにより適宜設定されるが、1〜6μmの範囲が好適である。
Next, using the resist pattern 32 as a mask, the wiring layer 22 in the refined region is etched by a predetermined amount using an etchant such as a ferric chloride solution (see FIGS. 2 (f) and 3 (f)). The resist pattern 32 is stripped with the stripping solution to obtain a printed wiring board in which the wiring layer 22a formed between the lands 23 is thinner and thinner than the wiring layer 22 (FIG. 2 (g) and FIG. g) and FIG. 1 (a)).
Here, when the wiring layer 22 in the fine region is etched, the pattern shape of the wiring layer 22 is also relaxed, the taper shape is eliminated, and the insulation between the wiring layers 22a is improved.
Further, the etching amount of the fine region is appropriately set depending on the thickness of the copper foil and the pattern pitch, but a range of 1 to 6 μm is preferable.

以下、図4(a)に示す半導体装置用基板の作製法について説明する。
図6(a)〜(f)、図7(g)〜(k)及び図8(a)〜(f)に、本発明に係るプリント配線板(半導体装置用基板)の製造工程の模式構成断面図を示す。図6(a)〜(f)及び図7(g)〜(k)は図4(a)をC−C’線で切断した模式構成断面図、図8(a)〜(f)は図4(a)をD−D’線で切断した模式構成断面図を示す。
Hereinafter, a method for manufacturing the substrate for a semiconductor device illustrated in FIG.
6 (a) to (f), FIGS. 7 (g) to (k) and FIGS. 8 (a) to (f), schematic configurations of manufacturing processes of the printed wiring board (semiconductor device substrate) according to the present invention. A cross-sectional view is shown. 6 (a) to 6 (f) and FIGS. 7 (g) to (k) are schematic cross-sectional views of FIG. 4 (a) taken along the line CC ′, and FIGS. 8 (a) to 8 (f) are diagrams. The schematic structure sectional drawing which cut | disconnected 4 (a) by DD 'line is shown.

まず、ポリイミドフィルム等からなる絶縁基材11に接着剤フィルムをラミネートする等の方法で接着剤層12を形成する(図6(a)参照)。
次に、接着剤層12が形成された絶縁基材11を金型で打ち抜き、スプロケットホール13及びデバイスホール15を形成する(図6(b)参照)。
First, the adhesive layer 12 is formed by a method such as laminating an adhesive film on the insulating base material 11 made of a polyimide film or the like (see FIG. 6A).
Next, the insulating base material 11 on which the adhesive layer 12 is formed is punched with a mold to form sprocket holes 13 and device holes 15 (see FIG. 6B).

次に、所定厚の銅箔を接着剤層12上にラミネートして、銅箔21が積層された基材を作製する(図6(c)及び図8(a)参照)。
次に、銅箔21表面を洗浄後ドライフィルムをラミネートする等の方法で感光層33を形成し(図6(d)参照)、パターン露光、現像等の一連のパターニング処理を行って、レジストパターン33aを形成する(図6(e)及び図8(b)参照)。
Next, a copper foil having a predetermined thickness is laminated on the adhesive layer 12 to produce a base material on which the copper foil 21 is laminated (see FIGS. 6C and 8A).
Next, a photosensitive layer 33 is formed by a method such as laminating a dry film after cleaning the surface of the copper foil 21 (see FIG. 6D), and a series of patterning processes such as pattern exposure and development are performed to form a resist pattern. 33a is formed (see FIGS. 6E and 8B).

次に、レジストパターン33aをマスクにして銅箔21を塩化第2鉄溶液等のエッチング液を用いてエッチングし(図6(f)及び図8(c)参照)、専用の剥離液でレジストパターン33aを剥離処理し、絶縁基材11上にインナーリード24、配線層25、はんだボール用接続端子26を形成する(図7(g)、図8(d)及び図5(a)参照)。   Next, using the resist pattern 33a as a mask, the copper foil 21 is etched using an etchant such as a ferric chloride solution (see FIGS. 6 (f) and 8 (c)), and the resist pattern is removed with a special stripping solution. 33a is peeled off to form the inner leads 24, the wiring layer 25, and the solder ball connection terminals 26 on the insulating substrate 11 (see FIGS. 7G, 8D, and 5A).

次に、インナーリード24、配線層25、はんだボール用接続端子26が形成された絶縁基材11上にドライフィルムをラミネートする等の方法で感光層を形成し、パターン露光、現像等の一連のパターニング処理を行って、図5(a)に示すファイン化領域を除く領域にレジストパターン34を形成する(図7(h)参照)。   Next, a photosensitive layer is formed by a method such as laminating a dry film on the insulating base material 11 on which the inner lead 24, the wiring layer 25, and the solder ball connection terminal 26 are formed, and a series of pattern exposure, development, and the like are performed. A patterning process is performed to form a resist pattern 34 in a region excluding the refined region shown in FIG. 5A (see FIG. 7H).

ここで、ファイン化領域は説明の便宜上インナーリード24周辺を設定したが、はんだボール用接続端子26間の配線層25も配線層ピッチが込み入ってくればファイン化領域の設定対象になりうる。   Here, for the sake of convenience of description, the fine region is set around the inner lead 24, but the wiring layer 25 between the solder ball connection terminals 26 can also be set as a fine region if the wiring layer pitch is complicated.

次に、レジストパターン34をマスクにしてファイン化領域のインナーリード24を塩化第2鉄溶液等のエッチング液を用いてス所定量エッチングし(図7(i)参照)、専用の剥離液でレジストパターン34を剥離処理し、配線層24よりも薄く、かつ細く形成されたインナーリード24a及びインナーリード24aの先端部に半導体素子用接続端子24bを形成する(図7(j)及び図8(e)参照)。
ここで、ファイン化領域のインナーリード24をエッチングする際インナーリードのパターン形状もテーパー形状が緩和されてテーパー形状が無くなり、インナーリード間の絶縁性も改善される。
また、ファイン化領域のエッチング量は銅箔の厚さ及びパターンピッチにより適宜設定されるが、1〜6μmの範囲が好適である。
Next, using the resist pattern 34 as a mask, the inner lead 24 in the refined region is etched by a predetermined amount using an etching solution such as ferric chloride solution (see FIG. 7 (i)), and the resist is removed using a special stripping solution. The pattern 34 is peeled off to form the inner lead 24a formed thinner and thinner than the wiring layer 24 and the semiconductor element connection terminal 24b at the tip of the inner lead 24a (FIGS. 7J and 8E). )reference).
Here, when the inner lead 24 in the fine region is etched, the taper shape of the pattern of the inner lead is relaxed, the taper shape is eliminated, and the insulation between the inner leads is improved.
Further, the etching amount of the fine region is appropriately set depending on the thickness of the copper foil and the pattern pitch, but a range of 1 to 6 μm is preferable.

最後に、感光性のソルダーレジストを印刷してソルダーレジスト層を形成し、パターン露光、現像等の一連のパターニング処理を行って、ソルダーレジストパターン41を形成して、ソルダーレジストパターン41をマスクにしてはんだボール用接続端子26及び半導体素子用接続端子24b上に電解ニッケルめっき、金めっきを順に施して絶縁基材11にはんだボール用接続端子26及び半導体素子用接続端子24bが形成された半導体装置用基板を得る(図7(k)、図8(f)及び図4(a)参照)。   Finally, a photosensitive solder resist is printed to form a solder resist layer, and a series of patterning processes such as pattern exposure and development are performed to form a solder resist pattern 41, using the solder resist pattern 41 as a mask. For the semiconductor device in which the solder ball connection terminal 26 and the semiconductor element connection terminal 24b are formed on the insulating base 11 by sequentially performing electrolytic nickel plating and gold plating on the solder ball connection terminal 26 and the semiconductor element connection terminal 24b. A substrate is obtained (see FIGS. 7 (k), 8 (f) and 4 (a)).

以下実施例により本発明を詳細に説明する。
まず、50μmのポリイミドフィルム(ユーピレックスS(商品名):宇部興産株式会社製)からなる絶縁基材11の片面に接着剤(タイプX(商品名)、株式会社巴川製紙所製)シートをラミネートして12μm厚の接着剤層12を形成し、ラミネーターを用いて、設定温度120℃、ラミネートローラー圧0.2MPa、ラミネート速度1.2m/分で18μm厚の銅箔21を接着剤層12にラミネートした。その後、オーブンで段階的に加熱していき、最終的には140℃で5時間保持して接着剤を完全に硬化させ、銅箔21が積層された基材を作製した(図2(a)及び図3(a)参照)。
Hereinafter, the present invention will be described in detail by way of examples.
First, an adhesive (type X (trade name), manufactured by Yodogawa Paper Co., Ltd.) sheet is laminated on one side of an insulating substrate 11 made of a 50 μm polyimide film (Upilex S (trade name): manufactured by Ube Industries, Ltd.). An adhesive layer 12 having a thickness of 12 μm is formed, and a laminator is used to laminate a copper foil 21 having a thickness of 18 μm on the adhesive layer 12 at a setting temperature of 120 ° C., a laminating roller pressure of 0.2 MPa, and a laminating speed of 1.2 m / min. did. After that, it was heated stepwise in an oven, and finally held at 140 ° C. for 5 hours to completely cure the adhesive, and a base material on which the copper foil 21 was laminated was produced (FIG. 2A). And FIG. 3 (a)).

次に、銅箔21表面を洗浄後、10μm厚のドライフィルムレジスト(SUNFORT(商品名):旭化成株式会社製)をロール温度105℃、圧力0.3MPa、ラミネート速度1.5m/分でラミネートし、感光層を形成し、投影型露光装置を用いて、パターン露光、現像等の一連のパターニング処理を行って、レジストパターン31を形成した(図2(b)及び図3(b)参照)。   Next, after cleaning the surface of the copper foil 21, a 10 μm thick dry film resist (SUNFORT (trade name) manufactured by Asahi Kasei Co., Ltd.) is laminated at a roll temperature of 105 ° C., a pressure of 0.3 MPa, and a laminating speed of 1.5 m / min. Then, a photosensitive layer was formed, and a series of patterning processes such as pattern exposure and development were performed using a projection exposure apparatus to form a resist pattern 31 (see FIGS. 2B and 3B).

次に、レジストパターン31をマスクにして50℃に加熱した塩化第2鉄溶液をスプレーで吹き付けて、露出した銅箔21をエッチングし(図2(c)及び図3(c)参照)、50℃の3%水酸化ナトリウム溶液をスプレーし、レジストパターン31を剥離し、絶縁基材11上に配線層22及びランド23を形成した(図2(d)、図3(d)及び図1(a)参照)。   Next, a ferric chloride solution heated to 50 ° C. is sprayed by using the resist pattern 31 as a mask, and the exposed copper foil 21 is etched (see FIGS. 2C and 3C). The resist pattern 31 was peeled off by spraying a 3% sodium hydroxide solution at 0 ° C., and the wiring layer 22 and the land 23 were formed on the insulating substrate 11 (FIG. 2D, FIG. 3D and FIG. a)).

ここで、ランド23間の配線層22のピッチは30μmであった。   Here, the pitch of the wiring layer 22 between the lands 23 was 30 μm.

次に、40μm厚のドライフィルムレジスト(SUNFORT(商品名):旭化成株式会社製)をロール温度105℃、圧力0.4MPa、ラミネート速度1.2m/分でラミネートして感光層を形成し、投影型露光装置にて所定のパターン露光を行い、30℃、1%の炭酸ナトリウム溶液を約30秒間スプレー現像してパターニング処理を行い、図1(a)に示すファイン化領域を除く領域にレジストパターン32を形成した(図2(e)及び図3(e)参照)。   Next, a 40 μm thick dry film resist (SUNFORT (trade name) manufactured by Asahi Kasei Co., Ltd.) is laminated at a roll temperature of 105 ° C., a pressure of 0.4 MPa, and a laminating speed of 1.2 m / min to form a photosensitive layer, and projected. A predetermined pattern exposure is performed by a mold exposure apparatus, and a patterning process is performed by spray development of a 1% sodium carbonate solution at 30 ° C. for about 30 seconds, and a resist pattern is formed in an area excluding the refined area shown in FIG. 32 was formed (see FIG. 2 (e) and FIG. 3 (e)).

次に、レジストパターン32をマスクにしてファイン化領域のインナーリード22を塩化第2鉄溶液にて2μm程度スプレーエッチングし(図2(f)及び図3(f)参照)、50℃3%水酸化ナトリウム溶液をスプレーで吹き付けてレジストパターン32を剥離処理し、配線層22よりも2μm程度薄く、かつ5μm程細く形成されたランド23間の配線層22aを形成したプリント配線板を得た(図2(g)、図3(g)及び図1(a)参照)。
ここで、ファイン化領域の配線層22をエッチングする際配線層22のパターン形状もテーパー形状が緩和され、テーパー形状が無くなり、配線層22a間の絶縁性も改善された。
Next, using the resist pattern 32 as a mask, the inner lead 22 in the refined region is spray etched by about 2 μm with a ferric chloride solution (see FIG. 2 (f) and FIG. 3 (f)), and 50 ° C. 3% water. The resist pattern 32 was peeled off by spraying a sodium oxide solution by spraying to obtain a printed wiring board on which the wiring layer 22a between the lands 23 formed about 2 μm thinner and about 5 μm thinner than the wiring layer 22 was formed (FIG. 2 (g), FIG. 3 (g) and FIG. 1 (a)).
Here, when the wiring layer 22 in the refined region is etched, the pattern shape of the wiring layer 22 is also reduced in taper shape, the tapered shape is eliminated, and the insulation between the wiring layers 22a is also improved.

まず、50μmのポリイミドフィルム(ユーピレックスS(商品名):宇部興産株式会社製)からなる絶縁基材11の片面に接着剤(タイプX(商品名)、株式会社巴川製紙所製)シートをラミネートして12μm厚の接着剤層12を形成した(図6(a)参照)。   First, an adhesive (type X (trade name), manufactured by Yodogawa Paper Co., Ltd.) sheet is laminated on one side of an insulating substrate 11 made of a 50 μm polyimide film (Upilex S (trade name): manufactured by Ube Industries, Ltd.). Thus, an adhesive layer 12 having a thickness of 12 μm was formed (see FIG. 6A).

次に、絶縁基材11の所定位置を金型で打抜いてスプロケットホール13及びデバイスホール15を形成した(図6(b)及び図5(a)参照)。   Next, the sprocket hole 13 and the device hole 15 were formed by punching a predetermined position of the insulating base material 11 with a mold (see FIGS. 6B and 5A).

次に、ラミネーターを用いて、設定温度120℃、ラミネートローラー圧0.2MPa、ラミネート速度1.2m/分で18μm厚の銅箔21を接着剤層12にラミネートした。その後、オーブンで段階的に加熱していき、最終的には140℃で5時間保持して接着剤を完全に硬化させ、銅箔21が積層された基材を作製した(図6(c)及び図8(a)参照)。   Next, a copper foil 21 having a thickness of 18 μm was laminated on the adhesive layer 12 using a laminator at a set temperature of 120 ° C., a laminating roller pressure of 0.2 MPa, and a laminating speed of 1.2 m / min. Then, it heated in steps in an oven, and finally it was held at 140 ° C. for 5 hours to completely cure the adhesive, and a base material on which the copper foil 21 was laminated was produced (FIG. 6C). And FIG. 8 (a)).

次に、銅箔21表面を洗浄後、10μm厚のドライフィルムレジスト(SUNFORT(商品名):旭化成株式会社製)をロール温度105℃、圧力0.3MPa、ラミネート速度1.5m/分でラミネートし、感光層33を形成した(図6(d)参照)。   Next, after cleaning the surface of the copper foil 21, a 10 μm thick dry film resist (SUNFORT (trade name) manufactured by Asahi Kasei Co., Ltd.) is laminated at a roll temperature of 105 ° C., a pressure of 0.3 MPa, and a laminating speed of 1.5 m / min. Then, the photosensitive layer 33 was formed (see FIG. 6D).

次に、投影型露光装置を用いて、パターン露光、現像等の一連のパターニング処理を行って、レジストパターン33aを形成した(図6(e)及び図8(b)参照)。   Next, a series of patterning processes such as pattern exposure and development were performed using a projection type exposure apparatus to form a resist pattern 33a (see FIGS. 6E and 8B).

次に、レジストパターン33aをマスクにして50℃に加熱した塩化第2鉄溶液をスプレーで吹き付けて、露出した銅箔21をエッチングし(図6(f)及び図8(c)参照)、50℃の3%水酸化ナトリウム溶液をスプレーし、レジストパターン33aを剥離し、絶縁基材11上にインナーリード24、配線層25、はんだボール用接続端子26を形成した(図7(g)、図8(d)及び図5(a)参照)。   Next, a ferric chloride solution heated to 50 ° C. is sprayed by using the resist pattern 33a as a mask, and the exposed copper foil 21 is etched (see FIGS. 6 (f) and 8 (c)). The resist pattern 33a was peeled off by spraying a 3% sodium hydroxide solution at 0 ° C., and the inner leads 24, the wiring layer 25, and the solder ball connection terminals 26 were formed on the insulating substrate 11 (FIG. 7 (g), FIG. 8 (d) and FIG. 5 (a)).

ここで、インナーリード24のピッチは35μmであった。   Here, the pitch of the inner leads 24 was 35 μm.

次に、40μm厚のドライフィルムレジスト(SUNFORT(商品名):旭化成株式会社製)をロール温度105℃、圧力0.4MPa、ラミネート速度1.2m/分でラミネートして感光層を形成し、投影型露光装置にて所定のパターン露光を行い、30℃、1
%の炭酸ナトリウム溶液を約30秒間スプレー現像してパターニング処理を行い、図5(a)に示すファイン化領域を除く領域にレジストパターン34を形成した(図7(h)参照)。
Next, a 40 μm thick dry film resist (SUNFORT (trade name) manufactured by Asahi Kasei Co., Ltd.) is laminated at a roll temperature of 105 ° C., a pressure of 0.4 MPa, and a laminating speed of 1.2 m / min to form a photosensitive layer, and projected. A predetermined pattern exposure is performed with a mold exposure apparatus, and 30 ° C., 1
% Of sodium carbonate solution was spray-developed for about 30 seconds to perform patterning, and a resist pattern 34 was formed in a region excluding the refined region shown in FIG. 5A (see FIG. 7H).

次に、レジストパターン34をマスクにしてファイン化領域のインナーリード24を塩化第2鉄溶液にて表裏合計で5μm程度スプレーエッチングし(図7(i)参照)、50℃3%水酸化ナトリウム溶液をスプレーで吹き付けてレジストパターン34を剥離処理し、配線層25よりも6μm程度薄く、かつ3μm程細く形成されたインナーリード24a及びインナーリード24aの先端部に半導体素子用接続端子24bを形成した(図7(j)及び図8(e)参照)。   Next, using the resist pattern 34 as a mask, the inner lead 24 in the refined region is spray-etched with a ferric chloride solution for a total of about 5 μm (see FIG. 7 (i)), and a 50 ° C. 3% sodium hydroxide solution The resist pattern 34 is peeled off by spraying to form an inner lead 24a that is about 6 μm thinner than the wiring layer 25 and about 3 μm thinner, and a semiconductor element connection terminal 24b is formed at the tip of the inner lead 24a (see FIG. FIG. 7 (j) and FIG. 8 (e)).

最後に、感光性のソルダーレジストを印刷してソルダーレジスト層を形成し、パターン露光、現像等の一連のパターニング処理を行って、ソルダーレジストパターン41を形成して、ソルダーレジストパターン41をマスクにしてはんだボール用接続端子26及び半導体素子用接続端子24b上に電解ニッケルめっき、金めっきを順に施して、絶縁基材11にはんだボール用接続端子26及び半導体素子用接続端子24bが形成された半導体装置用基板を得た(図7(k)、図8(f)及び図4(a)参照)。   Finally, a photosensitive solder resist is printed to form a solder resist layer, and a series of patterning processes such as pattern exposure and development are performed to form a solder resist pattern 41, using the solder resist pattern 41 as a mask. A semiconductor device in which the solder ball connection terminal 26 and the semiconductor element connection terminal 24b are formed on the insulating substrate 11 by performing electrolytic nickel plating and gold plating on the solder ball connection terminal 26 and the semiconductor element connection terminal 24b in this order. A substrate was obtained (see FIG. 7 (k), FIG. 8 (f) and FIG. 4 (a)).

(a)は、本発明に係るプリント配線板の一実施例を示す模式平面図である。(A) is a schematic plan view which shows one Example of the printed wiring board which concerns on this invention.

(b)は、(a)をA−A’線で切断した模式構成断面図である。   (B) is a schematic cross-sectional view taken along line A-A ′ of (a).

(c)は、(a)をB−B’線で切断した模式構成断面図である。
(a)〜(g)は、本発明に係るプリント配線板の製造工程の一例を示すA−A’線で切断した模式構成断面図である。 (a)〜(g)は、本発明に係るプリント配線板の製造工程の一例を示すB−B’線で切断した模式構成断面図である。 (a)は、本発明に係るプリント配線板の他の実施例を示す半導体装置用基板の模式平面図である。
(C) is a schematic cross-sectional view of (a) cut along the line BB ′.
(A)-(g) is the schematic structure sectional drawing cut | disconnected by the AA 'line which shows an example of the manufacturing process of the printed wiring board concerning this invention. (A)-(g) is the schematic structure sectional drawing cut | disconnected by the BB 'line which shows an example of the manufacturing process of the printed wiring board which concerns on this invention. (A) is a schematic top view of the board | substrate for semiconductor devices which shows the other Example of the printed wiring board concerning this invention.

(b)は、(a)をC−C’線で切断した模式構成断面図である。   (B) is a schematic cross-sectional view taken along line C-C ′ of (a).

(c)は、(a)をD−D’線で切断した模式構成断面図である。
(a)は、本発明に係るプリント配線板の他の実施例を示す半導体装置用基板の途中工程を示す模式平面図である。
(C) is a schematic cross-sectional view of (a) cut along line DD ′.
(A) is a schematic plan view which shows the intermediate | middle process of the board | substrate for semiconductor devices which shows the other Example of the printed wiring board concerning this invention.

(b)は、(a)をC−C’線で切断した模式構成断面図である。   (B) is a schematic cross-sectional view taken along line C-C ′ of (a).

(c)は、(a)をD−D’線で切断した模式構成断面図である。
(a)〜(f)は、本発明に係るプリント配線板の他の実施例を示す半導体装置用基板の製造方法における工程の一部を示すC−C’線で切断した模式構成断面図である。 (g)〜(k)は、本発明に係るプリント配線板の他の実施例を示す半導体装置用基板の製造方法における工程の一部を示すC−C’線で切断した模式構成断面図である。 (a)〜(f)は、本発明に係るプリント配線板の他の実施例を示す半導体装置用基板の製造工程を示すD−D’線で切断した模式構成断面図である。
(C) is a schematic cross-sectional view of (a) cut along line DD ′.
(A)-(f) is typical structure sectional drawing cut | disconnected by CC 'line which shows a part of process in the manufacturing method of the board | substrate for semiconductor devices which shows the other Example of the printed wiring board concerning this invention. is there. (G)-(k) is typical structure sectional drawing cut | disconnected by CC 'line | wire which shows a part of process in the manufacturing method of the board | substrate for semiconductor devices which shows the other Example of the printed wiring board concerning this invention. is there. (A)-(f) is typical structure sectional drawing cut | disconnected by the DD 'line | wire which shows the manufacturing process of the board | substrate for semiconductor devices which shows the other Example of the printed wiring board concerning this invention.

符号の説明Explanation of symbols

11……絶縁基材
12……接着剤層
13……スプロケットホール
15……デバイスホール
21……銅箔
22、25……配線層
22a……薄膜化された配線層
23……ランド
31、32、33a、34……レジストパターン
24……インナーリード
24a……薄膜化されたインナーリード
24b……半導体素子用接続端子
26……ハンダボール用接続パッド
33……感光層
41……ソルダーレジストパターン
11 ... Insulating substrate 12 ... Adhesive layer 13 ... Sprocket hole 15 ... Device hole 21 ... Copper foil 22, 25 ... Wiring layer 22a ... Thinned wiring layer 23 ... Lands 31, 32 , 33a, 34... Resist pattern 24... Inner lead 24a... Thinned inner lead 24b... Semiconductor element connection terminal 26... Solder ball connection pad 33... Photosensitive layer 41.

Claims (2)

絶縁基材上にはんだボール用接続端子、ランド、配線層、インナーリード及び半導体素子用接続端子等が形成されてなるプリント配線板であって、前記はんだボール用接続端子間及び前記ランド間の配線層、インナーリード及び半導体素子用接続端子が他の配線層よりも微細パターンで構成されている領域をファイン化領域と設定し、前記ファイン化領域の配線層、インナーリード及び半導体素子用接続端子の膜厚及び線幅がファイン化領域以外の配線層の膜厚よりも薄く、かつ細く形成されていることを特徴とするプリント配線板。   A printed wiring board in which solder ball connection terminals, lands, wiring layers, inner leads, semiconductor element connection terminals, and the like are formed on an insulating substrate, wherein the wiring between the solder ball connection terminals and between the lands A region in which the layer, the inner lead, and the connection terminal for the semiconductor element are configured with a finer pattern than the other wiring layer is set as a fined region, and the wiring layer, the inner lead, and the connection terminal for the semiconductor element in the fined region are set. A printed wiring board characterized in that the film thickness and the line width are thinner and thinner than the film thickness of the wiring layer other than the refined region. 少なくとも絶縁基材上に、ランド、はんだボール用接続端子、配線層、インナーリード及びインナーリードの先端部に半導体素子用接続端子を形成する工程と、前記ランド間の配線層、前記はんだボール用接続端子間の配線層、インナーリード、半導体素子用接続端子の所定領域をファイン化領域に設定する工程と、前記ファイン化領域を除く領域にレジストパターンを形成する工程と、前記レジストパターンをマスクにしてファイン化領域の配線層、インナーリード、半導体素子用接続端子を所定量エッチングする工程とを有することを特徴とする請求項1に記載のプリント配線板の製造方法。   A step of forming a connection terminal for a semiconductor element at least on an insulating base material, a land, a solder ball connection terminal, a wiring layer, an inner lead and a tip of the inner lead, and a wiring layer between the lands and the connection for the solder ball A step of setting a predetermined region of a wiring layer between terminals, inner leads, and connection terminals for semiconductor elements as a finer region, a step of forming a resist pattern in a region excluding the finer region, and using the resist pattern as a mask The method of manufacturing a printed wiring board according to claim 1, further comprising a step of etching a predetermined amount of the wiring layer, the inner lead, and the semiconductor element connection terminal in the refined region.
JP2004037777A 2004-02-16 2004-02-16 Printed wiring board and manufacturing method thereof Expired - Fee Related JP4333395B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008084928A (en) * 2006-09-26 2008-04-10 Hitachi Cable Ltd Method of manufacturing tab tape for semiconductor device
US7977805B2 (en) 2004-11-11 2011-07-12 Sharp Kabushiki Kaisha Flexible wiring substrate, semiconductor device and electronic device using flexible wiring substrate, and fabricating method of flexible wiring substrate
JP2018032836A (en) * 2016-08-26 2018-03-01 株式会社村田製作所 Electronic component joint structure and manufacturing method of electronic component joint body

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7977805B2 (en) 2004-11-11 2011-07-12 Sharp Kabushiki Kaisha Flexible wiring substrate, semiconductor device and electronic device using flexible wiring substrate, and fabricating method of flexible wiring substrate
JP2008084928A (en) * 2006-09-26 2008-04-10 Hitachi Cable Ltd Method of manufacturing tab tape for semiconductor device
JP2018032836A (en) * 2016-08-26 2018-03-01 株式会社村田製作所 Electronic component joint structure and manufacturing method of electronic component joint body

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