JP2005217177A - Electronic component device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic component device in which short-circuits due to thermal melting and outflowing of internal solder by heat at the time of mounting are prevented when mounted on a mother board. <P>SOLUTION: The electronic component device 1 is composed by joining an electronic component element 2 for which a connection electrode 8 and an outer peripheral sealing electrode 9 are formed on one main surface, an electrode 10 for element connection connected to the connection electrode 8 through a solder bump member 4 on an upper surface, an outer peripheral sealing conductor film 11 joined with the outer peripheral sealing electrode 9 through a solder joining member 5, and a base substrate 3 where an external terminal electrode is formed, respectively. These elements are joined to form a prescribed interval between the base substrate 3 and the electronic component element 2, and an exterior member 6 is arranged on the side face of the electronic component element 2 and the outer peripheral surface of the solder joining member 5. In the electronic component device 1, the exterior member 6 is formed of a low elastic material whose volume expansion rate is 6% to 11% and elastic modulus at the melting temperature of the solder joining member 5 is ≤0.3 GPa. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an electronic component device in which electronic component elements are flip-chip mounted on a base substrate using solder.

  2. Description of the Related Art Conventionally, an electronic component device manufactured by forming bumps on input / output electrodes of an electronic component element and performing flip-chip mounting face-down with a connection electrode of a base substrate in response to a demand for downsizing of an electronic component device. Are known. As an example of this, FIG. 4 shows a cross-sectional view of a surface acoustic wave device 100 as an electronic component device in which an electronic component element (surface acoustic wave element) 101 is flip-chip mounted using solder.

  In the electronic component element 101, an IDT electrode 110 is formed on one main surface (lower surface in FIG. 4) of a single crystal piezoelectric substrate such as a lithium tantalate substrate or a lithium niobate substrate, and the IDT electrode 110 is formed on the same main surface. A connection electrode 104 for supplying a signal and taking out a signal from the IDT electrode 110 is formed. These IDT electrodes 110 and connection electrodes 104 are formed of aluminum or the like on a piezoelectric substrate using a thin film technique.

  The base substrate 102 is made of, for example, alumina ceramics, and an element connection electrode 105 connected to the connection electrode 104 of the surface acoustic wave element 101 is disposed on the upper surface of the base substrate.

  The surface acoustic wave element 101 that is an electronic component element is connected to the connection electrode 104 of the surface acoustic wave element 101 and the base substrate 102 so that a predetermined interval is formed between the lower surface thereof and the upper surface of the base substrate 102. The electrode 105 is connected with the solder bump member 103. An outer peripheral sealing electrode 106 is formed on the outer periphery of the surface acoustic wave element 101, and this portion and the outer peripheral sealing conductor film 107 of the base substrate 102 are bonded together by a solder bonding member 108. And the upper surface of the base substrate 102 are hermetically sealed. As a result, the IDT electrode 110 formed on the lower surface of the surface acoustic wave element 101 can prevent deterioration due to moisture intrusion and the like, and can ensure stable reliability performance.

  In order to improve airtightness and improve reliability, usually, an epoxy resin paste or the like is applied and cured from the upper surface side of the surface acoustic wave element 101 connected and sealed with the base substrate 102. Thus, the exterior resin layer 109 is formed.

The solder used for the solder bump member 103 and the solder bonding member 108 generally has Pb / Sn as a main component and has a volume expansion coefficient of about 3 to 5%.
Japanese Patent Application No. 2002-222582

  However, in the conventional surface acoustic wave device 100, heat such as solder reflow is also applied to the inside of the surface acoustic wave device 100 when mounted on the mother board. Heat is also applied to the solder bonding member 108 that bonds the outer peripheral sealing conductor film 107 of the substrate 102 and the solder bump member 103 that connects the connection electrode 104 and the element connection electrode 105. At this time, if excessive heat is applied to the solder bump member 103 and the solder bonding member 108, they are remelted and the volume expands by 3 to 5% as described above.

  However, since the outer peripheral surface of the solder bonding member 108 is covered with the outer resin layer 109, when the volume expansion coefficient of the outer resin 109 is too low, the solder bump member 103 and the solder bonding member whose volume is expanded by re-melting. The member 108 flows in the gap between the surface acoustic wave element 101 and the base substrate 102 in the mutual direction. As a result, the connection electrode 104 and the outer peripheral sealing electrode 106 of the surface acoustic wave element 101 are short-circuited. If the volume expansion coefficient of the exterior resin 109 is too large, the exterior resin 109 peels off the surface acoustic wave element 101 from the base substrate 102 when the outer layer resin 109 expands due to heating. As a result, there is a problem that the solder joint member 108 is thinned and connection failure occurs.

  The present invention has been devised in view of the above-described problems, and an object of the present invention is to provide an electronic component device that can prevent a short circuit and poor connection due to remelting of internal solder when mounted on a motherboard. There is.

  An electronic component device according to the present invention includes an electronic component element having a connection electrode and a peripheral sealing electrode formed on one main surface, an element connection electrode connected to the connection electrode via a solder bump member, and a solder joint member on an upper surface. A base substrate on which an outer peripheral sealing conductor film and an external terminal electrode that are joined to the outer peripheral sealing electrode are respectively formed so that a predetermined interval is formed between the base substrate and the electronic component element. In the electronic component device, in which an exterior member is disposed on the side surface of the electronic component element and the outer peripheral surface of the solder joint member, the exterior member has a volume expansion coefficient of 6% to 11%, and The solder bonding member is formed of a low elastic material having an elastic modulus at a melting temperature of 0.3 GPa or less.

  The electronic component device of the present invention is characterized in that, in the above configuration, the solder bump member and the solder joint member are made of solder of the same composition.

  Furthermore, in the electronic component device of the present invention, in the above configuration, the exterior member is composed of an epoxy resin as a main component, and a low-elasticity material containing silica filler 60 wt% to 70 wt% and silicone resin 5 wt% to 10 wt%. It is characterized by comprising.

  In the electronic component device of the present invention, in the above configuration, a gas is filled in a region surrounded by the one main surface of the electronic component element, the upper surface of the base substrate, and the inner peripheral surface of the solder joint member. It is supposed to be.

  According to the electronic component device of the present invention, an electronic component element having a connection electrode and a peripheral sealing electrode formed on one main surface, an element connection electrode connected to the connection electrode via a solder bump member on the upper surface, and a solder joint member The outer peripheral sealing conductor film to be bonded to the outer peripheral sealing electrode and the base substrate on which the external terminal electrode is formed are bonded so that a predetermined interval is formed between the base substrate and the electronic component element. In addition, in the electronic component device in which the exterior member is disposed on the side surface of the electronic component element and the outer peripheral surface of the solder joint member, the side surface exterior member has a volume expansion coefficient of 6% to 11% and the solder joint member is melted. Because it is made of a low elastic material with an elastic modulus at a temperature of 0.3 GPa or less, when mounting an electronic component device on a mother board, solder bump members and solder joints are heated by heat such as solder reflow. When the force that lifts the electronic component element upward due to the stress due to the volume expansion is applied, the side surface exterior member also stretches well at the same time, and the surface of the base substrate and one main surface of the electronic component element Therefore, the remelted solder does not flow out in the gap between the electronic component element and the base substrate in the direction of each other to cause a short circuit. Moreover, since the volume expansion coefficient of the exterior member is appropriately selected, it is possible to prevent the occurrence of poor airtight sealing due to poor connection of the solder bump member or narrowing of the solder joint member.

  In addition, according to the electronic component device of the present invention, in the above configuration, when the solder bump member and the solder joint member are made of solder of the same composition, the solder bump member and the solder joint member can be formed simultaneously in the same process. Furthermore, since the volume expansion coefficient of both is the same, there is a poor connection due to the difference in volume expansion coefficient between the solder bump member and the solder joint member due to heat such as solder reflow when mounting the electronic component device on the motherboard. It does not occur.

  Furthermore, according to the electronic component device of the present invention, in the above configuration, the exterior member is mainly composed of epoxy resin, and low elasticity including 60 wt% to 70 wt% of silica filler and 5 wt% to 10 wt% of silicone resin. When made of a material, the exterior member can be a low elastic material having a volume expansion coefficient of 6 to 11% and an elastic modulus at the melting temperature of the solder joint member of 0.3 GPa or less.

  According to the electronic component device of the present invention, in the above configuration, when the gas is filled in the region surrounded by the lower surface of the electronic component element, the upper surface of the base substrate, and the inner peripheral surface of the solder joint member, When the device is mounted on the motherboard, the gas expands at the same time, and the force to lift the electronic component element upward is further strengthened, so it is more certain that the space between the upper surface of the base substrate and the lower surface of the electronic component element is widened. Thus, it is possible to further prevent the short circuit due to the flowing out of the solder.

  Hereinafter, an electronic component device of the present invention will be described in detail with reference to the accompanying drawings. The description will be made by taking a surface acoustic wave device using a surface acoustic wave element as an electronic component element as an example.

  FIG. 1 is a cross-sectional view of a surface acoustic wave device which is an embodiment of an electronic component device of the present invention, and FIG. 2 is a plan view of a base substrate 3 used in the surface acoustic wave device 1. 3A is a sectional view of the surface acoustic wave device when the solder bump member and the solder joint member are solidified, and FIG. 3B is a sectional view of the surface acoustic wave device when the solder bump member and the solder joint member are melted. is there.

  A surface acoustic wave device (electronic component device) 1 mainly includes a surface acoustic wave element (electronic component element) 2, a base substrate 3, a solder bump member 4, a solder bonding member 5, and an exterior member 6.

  Examples of the surface acoustic wave element 2 include a surface acoustic wave resonator, a surface acoustic wave filter, and the like. The surface acoustic wave element 2 has one main surface of a piezoelectric substrate such as quartz, lithium niobate, or lithium tantalate ( It is manufactured by forming an interdigital transducer electrode (in the present invention, including a comb-like electrode and a reflector electrode, hereinafter simply referred to as an IDT electrode) and a connection electrode 8 connected to the IDT electrode on the lower surface in FIG. Is done. An annular outer peripheral sealing electrode 9 is formed on the outer periphery of the lower surface of the piezoelectric substrate so as to surround the IDT electrode and the connection electrode 8 over the entire periphery. Each of these electrodes is made of a metal material such as Al or Cu, and is formed by, for example, a photolithography technique. Further, a layer of Cr, Ni, Au or the like is formed on the surface as necessary.

  The base substrate 3 is made of, for example, a multilayer substrate such as a glass-ceramic material, and has an element connection electrode 10 facing the connection electrode 8 of the surface acoustic wave element 2 and an outer peripheral sealing electrode on the surface (upper surface in FIG. 1). An annular outer peripheral sealing conductor film 11 facing 9 is formed. An external terminal electrode 12 is formed on the lower surface of the base substrate 3, and the element connection electrode 10 and the external terminal electrode 12 are connected by an internal wiring pattern including a via-hole conductor 13.

  Here, in the surface acoustic wave element 2, a predetermined gap is formed between the lower surface of the surface acoustic wave element 2 and the upper surface of the base substrate 3 by connecting the connection electrode 8 and the element connection electrode 10 of the base substrate 3 with the solder bump member 4. The base substrate 3 is electrically connected so as to be formed. Then, by bonding the outer peripheral sealing electrode 9 and the outer peripheral conductor film 11 with the solder bonding member 5, the air gap between the lower surface of the surface acoustic wave element 2 and the upper surface of the base substrate 3 is hermetically sealed. The inside can be kept airtight, and deterioration of the IDT electrode due to infiltration of moisture in the air can be prevented.

  In connecting / bonding the surface acoustic wave element 2 and the base substrate 3, first, the solder bump member 4 and the solder bonding member 5 are respectively formed on the base substrate 2. The solder bump member 4 and the solder bonding member 5 are formed by applying paste-like solder on the surface of the element connecting electrode 10 and the surface of the outer peripheral sealing conductor film 11, respectively. In order to obtain a bump-like shape, primary heat treatment and cleaning treatment of the applied solder are performed. As a result, the applied solder becomes hemispherical on the element connection electrode 10 and the outer peripheral sealing conductor film 11, and an unnecessary flux component can be removed. Then, the surface acoustic wave element 2 is placed on the base substrate 3 on which the above-described bump-shaped solder is formed, and is electrically connected by the solder bump member 4 by performing a reflow process, and mechanically by the solder bonding member 5. And performing hermetic sealing. As a result, a gap corresponding to the height of the solder bump member 4 and the solder bonding member 5 is formed between the lower surface of the surface acoustic wave element 2 and the upper surface of the base substrate 3 and is hermetically sealed. A stable surface acoustic wave can be oscillated on the lower surface of 2.

  The surface acoustic wave element 2 that is electrically connected and mechanically bonded to the base substrate 3 is provided with an exterior member 6 that covers the upper surface side and the outer periphery of the side surface. However, it is not always necessary to form the exterior member 6 on the upper surface side as long as sufficient strength against mechanical shock from the outside can be secured.

  A characteristic of the electronic component device 1 of the present invention is that the exterior member 6 has a volume expansion coefficient of 6% to 11% and a low elastic modulus of 0.3 GPa or less at the melting temperature of the solder bonding member 5. It is made of an elastic material. By setting the volume expansion coefficient of the exterior member 6 in the range of 6% to 11%, the surface of the base substrate 3 and the surface acoustic wave element 2 due to the volume expansion of the exterior member 6 due to melting of the solder bump member 4 and the solder bonding member 5 It is possible to follow the change in the interval between the two. For this reason, when the surface acoustic wave device 1 is mounted on the mother board, the solder bump member 4 and the solder joint member 5 are melted by heat such as solder reflow to cause volume expansion, and the force to lift the surface acoustic wave element 1 upward works. Even so, since the exterior member 6 extends well, the space between the surface of the base substrate 3 and the lower surface of the surface acoustic wave element 1 can be widened. That is, as shown in FIG. 3A, the distance A between the upper surface of the base substrate 3 and the lower surface of the surface acoustic wave element 2 before being mounted on the mother board is such that the solder bump member 4 and the solder bonding member 5 are mounted on the mother board. As a result of melting and volume expansion, an interval B shown in FIG. At this time, the distance A <the distance B, and the distance between the upper surface of the base substrate 3 and the lower surface of the surface acoustic wave element 2 increases, so that the volume expansion (particularly the vertical movement) of the solder bump member 4 and the solder bonding member 5 occurs. Will not be disturbed. Therefore, the melted solder as in the prior art does not flow out through the gap between the surface acoustic wave element 2 and the base substrate 3 in the direction of each other, thereby causing a short circuit.

  Moreover, even if there is a difference in volume expansion between the solder and the exterior member 6 by forming the solder joint member 5 with a low elastic material having an elastic modulus at a melting temperature of 0.3 GPa or less, the solder joint member of the exterior member 6 By setting the elastic modulus at the melting temperature of 0.3 GPa or less, it is possible to immediately follow the volume expansion of the solder, and the volume expansion of the molten solder can be sufficiently absorbed on the exterior member 6 side.

  If the volume expansion rate of the exterior member 6 is less than 6%, the volume expansion (particularly the vertical movement) of the solder bump member 4 and the solder bonding member 5 will be hindered, which may cause a short circuit failure due to the solder flowing out. Become. Further, if the volume expansion rate of the exterior member 6 exceeds 11%, the volume expansion of the exterior member 6 becomes too large compared to the volume expansion (particularly the movement in the vertical direction) of the solder bump member 4 and the solder bonding member 5. It may cause a thin connection failure. Further, when the elastic modulus at the melting temperature of the solder bonding member of the exterior member 6 exceeds 0.3 GPa, the time required for the volume expansion of the exterior member 6 becomes long, and the volume of the solder in which the volume expansion of the exterior member 6 is melted. There is a risk that it cannot follow the expansion, and as a result, a solder flow tends to occur inside. Therefore, in the present invention, it is important to form the exterior member 6 from a low elastic material having a volume expansion coefficient of 6% to 11% and an elastic modulus at the melting temperature of the solder bonding member 5 of 0.3 GPa or less. is there.

  Further, in the electronic component device of the present invention, when the solder bump member 4 and the solder joint member 5 are made of solder having the same composition, the solder bump member 4 and the solder joint member 5 can be simultaneously formed in the same process. Since the volume expansion coefficient of both is the same, the volume expansion coefficient difference between the solder bump member 4 and the solder joint member 5 due to heat such as solder reflow is reduced when the electronic component device is mounted on the motherboard. There is no connection failure due to this, and connection reliability is not impaired.

  Further, in the electronic component device of the present invention, the exterior member 6 is made of a low elastic material containing an epoxy resin as a main component, silica filler 60 wt% to 70 wt% and silicone resin 5 wt% to 10 wt%. In this case, the exterior member 6 can be easily made of a low elastic material having a volume expansion coefficient of 6% to 11% and an elastic modulus at the melting temperature of the solder bonding member 5 of 0.3 GPa or less.

  Here, the epoxy resin is the main component of the exterior member 6, and bisphenol epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin, naphthalene skeleton type epoxy resin, and phenol resin and acid anhydride curing as a curing agent. Examples of the composition include an agent and a phenol resin curing agent.

  Further, the silica filler is a skeleton component of the exterior member 6 and becomes a dominant element of the thermal expansion coefficient of the exterior member 6. Here, when the silica filler is less than 60 wt%, the volume expansion coefficient of the exterior member 6 exceeds 11%, and the sealing failure after reflow tends to increase, which is not preferable. On the other hand, when the silica filler exceeds 70 wt%, the exterior member 6 becomes hard and the elastic modulus at the melting temperature of the solder joint member 5 tends to exceed 0.3 GPa.

  Furthermore, the silicone resin can control the elastic modulus of the resin and acts as a thermal stress absorber after the exterior member 6 is cured. When the content of the silicone resin is less than 5 wt%, the elastic modulus at the melting temperature of the solder bonding member 5 of the exterior member 6 tends to exceed 0.3 GPa, and warping of the base substrate 3 increases due to curing shrinkage of the resin. A problem occurs. When the silicone resin exceeds 10 wt%, the elastic modulus of the exterior member 6 at normal temperature (25 ° C.) is as small as 3.5 GPa, and the strength necessary for protecting the surface acoustic wave element 2 from external impact can be maintained. It tends to be difficult.

  Silica has an average particle size of 5 μm and a maximum particle size of about 20 μm, and silicone resin has an average particle size of 1 μm or less. The volume expansion coefficient of the resin can be controlled by controlling the contents of these components. In general, the volume expansion coefficient of such a composition is obtained by the following equation.

Volume expansion rate (%) = α1 (Tg−25 ° C.) + Α2 (220 ° C.−Tg) (1)
In the formula (1), Tg is the glass transition temperature of the exterior member 6, α1 is the thermal expansion coefficient on the lower temperature side than the glass transition temperature (Tg) of the exterior member 6, and α2 is higher than the Tg of the exterior member 6. Coefficient of thermal expansion on the side.

  The volume expansion coefficient of the exterior member 6 obtained by the equation (1) is determined by determining the glass transition temperature (Tg) and the thermal expansion coefficient (α1, α2) of the exterior member 6 so that the values thereof are 6% to 11%. That's fine. As a result, the exterior member 6 is deformed following the volume expansion of the solder bump member 4 and the solder bonding member 5, and the distance between the upper surface of the base substrate 3 and the lower surface of the surface acoustic wave element 2 can be changed. As a result, there is no short circuit failure due to the flow of solder, and the adhesion strength with the surface acoustic wave element 2 can be secured.

  Further, in the electronic component device 1 of the present invention, when a gas is filled in a region surrounded by the lower surface of the electronic component element 2, the upper surface of the base substrate 3, and the inner peripheral surface of the solder bonding member 5, the electronic component device 1 Since the gas expands simultaneously with the heat when mounted on the mother board and the force for lifting the electronic component element 2 upward is further strengthened, the space between the surface of the base substrate 3 and the lower surface of the electronic component element 2 can be widened. Furthermore, it becomes more reliable, and the prevention of short circuit due to the flowing out of solder becomes even more reliable.

  Examples of such a gas include inert gases such as argon and nitrogen.

  In the above-described embodiment, the surface acoustic wave device, which is an electronic component device using a surface acoustic wave element as the electronic component element, has been described. However, the electronic component element is connected to the base substrate using a solder pump, and the side surface is The present invention can also be widely used for an electronic component device covered with an exterior member.

  Next, the exterior member 6 was evaluated using 10 types of resins having different volume expansion coefficients. The volume expansion coefficient of the exterior member 6 varies between 3.3 to 16%, and the surface acoustic wave devices 1 in which the exterior member 6 is formed of these 10 kinds of resins were respectively prepared. As shown in Table 1, the volume expansion coefficient was varied by adjusting the contents of silica, silicone resin, two types of phenol resin curing agents, and acid anhydride curing agents. Next, the 10 types of surface acoustic wave devices 1 thus prepared were subjected to reflow treatment (temperature: 220 ° C., peak: 245 ° C. for 30 seconds), and the sealing state was inspected with an X-ray inspection device. Table 1 shows the evaluation results of the volume expansion coefficient, glass transition temperature (Tg), thermal expansion coefficient (α1, α2), elastic modulus (25 ° C., 220 ° C.), and sealing state of these resins using an X-ray inspection apparatus. .

Note that the external size of the surface acoustic wave device 1 used here is about 1.6 mm × 1.8 mm × 0.7 mm, and the thickness of the exterior member 6 is about 0.1 mm. In this evaluation, solder having a melting temperature of 220 ° C. was used.

  When the defective rate of the sealed state after the reflow process is determined to be acceptable, the volume expansion coefficient is 6% to 11% and the volume expansion coefficient is 5.9% or less and the volume expansion coefficient is 12.1 to 16%. The range is rejected. Further, in order to make the volume expansion ratio in the range of 6% to 11%, the glass transition temperature is 126 ° C. to 138 ° C., the thermal expansion coefficient α1 at a temperature lower than the glass transition temperature (Tg) is 18 to 27 ppm, and the glass transition temperature. It can be seen that the thermal expansion coefficient α2 at a higher temperature than (Tg) may be 74 to 81 ppm. Here, the thermal expansion coefficient (α1, α2) is dominated by the amount of silica as the inorganic filler contained in the exterior member 6, and when the amount of silica is increased, the thermal expansion coefficient (α1, α2) decreases. As a result, the volume expansion coefficient can be reduced. The glass transition temperature (Tg) may be adjusted by adjusting the blending amounts of the bisphenol A type resin, bisphenol F type resin, naphthalene skeleton type epoxy resin, and phenol resin of the epoxy resin component contained in the exterior member 6. That is, the glass transition temperature (Tg) can be increased by increasing the amount of the naphthalene skeleton type epoxy resin.

  From the above results, according to the electronic component device of the present invention, the volume expansion coefficient of the exterior member 6 is 6 to 11%, and the elastic modulus at the melting temperature of the solder bonding member 5 is within a range of 0.3 GPa or less. Thus, it was found that the solder can be prevented from flowing out toward the inside even if the solder is remelted.

It is sectional drawing of one Example of the electronic component apparatus of this invention. It is a top view of the base substrate of the electronic component apparatus shown in FIG. (A), (b) is sectional drawing of one Example of the electronic component apparatus of this invention, (a) is sectional drawing at the time of solidification of a solder bump member and a solder joining member, (b) is solder bump member and solder | pewter It is sectional drawing at the time of the fusion | melting of a joining member. It is sectional drawing of the conventional electronic component apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Surface acoustic wave apparatus 2 ... Surface acoustic wave element 3 ... Base substrate 4 ... Solder bump member 5 ... Solder joining member 6 ... Exterior member 8 ... Connection electrode 9 ... Outer peripheral sealing electrode 10 ... Element connection electrode 11 ... Outer peripheral sealing conductor film

Claims (4)

On the other hand, an electronic component element having a connection electrode and an outer peripheral sealing electrode formed on the main surface, an element connection electrode connected to the connection electrode via a solder bump member on the upper surface, and the outer peripheral sealing electrode via a solder bonding member Joining the outer peripheral sealing conductor film to be joined and the base substrate on which the external terminal electrodes are respectively formed so as to form a predetermined interval between the base substrate and the electronic component element, and the electronic component element In the electronic component device in which the exterior member is disposed on the side surface of the solder and the outer peripheral surface of the solder joint member, the exterior member has a volume expansion coefficient of 6% to 11% and an elastic modulus at the melting temperature of the solder joint member. Is formed of a low-elasticity material of 0.3 GPa or less. 2. The electronic component device according to claim 1, wherein the solder bump member and the solder joint member are made of solder having the same composition. The said exterior member consists of a low elastic material which has an epoxy resin as a main component and contains silica filler 60wt% -70wt% and silicone resin 5wt% -10wt%. 2. The electronic component device according to 2. 4. The gas is filled in a region surrounded by one main surface of the electronic component element, an upper surface of the base substrate, and an inner peripheral surface of a solder bonding member. 5. The electronic component device described.

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