JPH07111438A - Surface acoustic wave device and its production - Google Patents

Surface acoustic wave device and its production

Info

Publication number
JPH07111438A
JPH07111438A JP25333893A JP25333893A JPH07111438A JP H07111438 A JPH07111438 A JP H07111438A JP 25333893 A JP25333893 A JP 25333893A JP 25333893 A JP25333893 A JP 25333893A JP H07111438 A JPH07111438 A JP H07111438A
Authority
JP
Japan
Prior art keywords
package substrate
saw
space
saw element
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25333893A
Other languages
Japanese (ja)
Inventor
Kunio Matsumoto
邦夫 松本
Yasuhiro Narukawa
泰弘 成川
Toyoki Asada
豊樹 浅田
Seiichi Ogawa
誠一 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP25333893A priority Critical patent/JPH07111438A/en
Publication of JPH07111438A publication Critical patent/JPH07111438A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

PURPOSE:To manufacture the surface acoustic wave(SAW) device without use of a special equipment while troublesome processing process is eliminated in the manufacture process of the SAW device. CONSTITUTION:A surface 12 of a SAW element 10 and a surface 22 of a package board 20 are opposed to each other. A bump 17 made of a conductor material is interposed between electrode pads 15, 25a of the both so that a space S is formed between an interdigital electrode 14 formed on the surface 12 of the SAW element 10 and the surface 22 of the package board 20 and the electrode pads 15, 25a of the both are connected mutually electrically. A side circumference of the space S is covered by an adhesives 30 including metallic particles so as to shield the space from an external space. The outer surface of the adhesives 30 including metallic particles is covered by a solder material 35.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、圧電基板上に交差指電
極が形成されている弾性表面波(以下、SAWとす
る。)素子と、このSAW素子を搭載するパッケージ基
板とを備えているSAW装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention comprises a surface acoustic wave (hereinafter referred to as SAW) element having a crossed finger electrode formed on a piezoelectric substrate, and a package substrate on which the SAW element is mounted. SAW device.

【0002】[0002]

【従来の技術】自動車電話やコードレス電話などの携帯
無線端末は小形軽量化トレンドにあり、これを実現する
ため使用部品の小形化や平面実装化が進められている。
2. Description of the Related Art Portable radio terminals such as car phones and cordless phones are in the trend of miniaturization and weight reduction, and in order to realize this, miniaturization and planar mounting of parts used are being promoted.

【0003】このような使用部品の中でも高周波回路部
に多用されているSAW装置は、リードピン付きキャン
封止型から、図9に示すような箱型に改良され、実用に
供されている。このSAW装置は、SAW素子1と、こ
れが搭載されるパッケージ基板5と、SAW素子1を覆
うための金属枠及び金属蓋とを備えているものである。
SAW素子1は、LiTaO3やLiNbO3などの圧電
結晶基板2上に交差指電極3、信号電極3a、及び接地
電極3b等が形成されている。SAW素子1は、その裏
面(交差指電極等が形成されていない側の面)と、アル
ミナなどのセラミック製のパッケージ基板5の表面とを
向かい合わせて、エポキシ系接着剤などのダイボンド材
7にてパッケージ基板5上に固着されている。SAW素
子1の信号電極3a及び接地電極3bは、パッケージ基
板5上に形成された素子側信号電極6a及び素子側接地
電極6bと、それぞれボンディングワイヤ4,4で接続
されている。パッケージ基板5には、あらかじめNiF
e系合金で作られた金属枠8が銀ろうで固定されてい
る。この金属枠8の上面には、同じくNiFe系合金で
作られた金属蓋9がシーム溶接されて、SAW素子1が
封止されている。すなわち、SAW装置は、その機能を
確保するため弾性表面波の減衰を抑えるためにSAW素
子1の交差指電極3が自由空間Sに接すると同時に、信
頼性を持続させるためにSAW素子1を完全に気密封止
した構造でなければならない。
Among such used parts, the SAW device, which is widely used in the high-frequency circuit section, has been improved from the can-sealing type with lead pin to the box type as shown in FIG. 9 and put into practical use. This SAW device includes a SAW element 1, a package substrate 5 on which the SAW element 1 is mounted, a metal frame and a metal lid for covering the SAW element 1.
In the SAW element 1, a cross finger electrode 3, a signal electrode 3a, a ground electrode 3b, and the like are formed on a piezoelectric crystal substrate 2 made of LiTaO 3 , LiNbO 3, or the like. The SAW element 1 is made to face the back surface (the surface on the side where the crossed finger electrodes are not formed) and the surface of the package substrate 5 made of ceramic such as alumina so as to form a die bond material 7 such as an epoxy adhesive. And is fixed on the package substrate 5. The signal electrode 3a and the ground electrode 3b of the SAW element 1 are connected to the element-side signal electrode 6a and the element-side ground electrode 6b formed on the package substrate 5 by bonding wires 4 and 4, respectively. The package substrate 5 has NiF beforehand.
A metal frame 8 made of an e-based alloy is fixed with silver solder. The SAW element 1 is sealed on the upper surface of the metal frame 8 by seam welding a metal lid 9 also made of NiFe alloy. That is, in the SAW device, the interdigital electrodes 3 of the SAW element 1 are in contact with the free space S in order to prevent the surface acoustic wave from being attenuated in order to ensure its function, and at the same time, the SAW element 1 is completely protected in order to maintain reliability. The structure must be hermetically sealed.

【0004】ところで、最近では、SAW装置のさらな
る小形化を図るため、例えば、特開平4−293310
号公報や特開平2−186662号公報等に記載されて
いるものが報告されている。これらは、いずれも、SA
W素子の表面(交差指電極等が形成されている側の面)
とパッケージ基板の表面とを対向させ、両者間に一定の
空間が形成されるよう両者を接続し、その周辺を金属材
料等で封止しするものである。すなわち、これらの技術
は、図9における金属蓋9等を省略することで、SAW
装置の小型化を図っている。
By the way, recently, in order to further reduce the size of the SAW device, for example, Japanese Unexamined Patent Publication No. 4-293310.
Those described in Japanese Patent Laid-Open No. 186662/1990 and the like are reported. These are all SA
The surface of the W element (the surface on which the cross finger electrodes are formed)
And the surface of the package substrate are opposed to each other, the two are connected so as to form a constant space therebetween, and the periphery thereof is sealed with a metal material or the like. In other words, these techniques eliminate SAW and the like in FIG.
The device is being downsized.

【0005】また、前者の従来技術(特開平4−293
310号公報)は、圧電結晶基板の表面上に交差指電極
を囲むように接地電極を形成すると共に、パッケージ基
板の表面にも接地電極を形成し、両接地電極間に半田材
を介在させることで、SAW素子の交差指電極とパッケ
ージ基板との間に一定の空間を形成すると共に、この空
間の側周を封止するものである。また、後者の従来技術
は、SAW素子の側周及びその裏面を樹脂性接着剤等で
覆うと共に、さらにその外側からAl等の金属材で覆う
ものである。なお、樹脂性接着剤の外側から更に金属材
で覆うのは、SAW素子の交差指電極上の空間を樹脂の
みで外部空間から遮蔽することができるものの、樹脂の
みでは気密性の点で十分ではないからである。
The former prior art (Japanese Patent Laid-Open No. 4-293)
No. 310), a ground electrode is formed on the surface of a piezoelectric crystal substrate so as to surround the interdigital electrodes, a ground electrode is also formed on the surface of the package substrate, and a solder material is interposed between the ground electrodes. Thus, a constant space is formed between the interdigital electrodes of the SAW element and the package substrate, and the side circumference of this space is sealed. Further, in the latter conventional technique, the side circumference and the back surface of the SAW element are covered with a resin adhesive or the like and further covered with a metal material such as Al from the outside. It should be noted that it is possible to cover the space above the interdigital electrode of the SAW element from the external space with only resin to cover the resin adhesive from the outside with a metal material, but the resin alone is not sufficient in terms of airtightness. Because there is no.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、特開平
4−293310号公報や特開平2−186662号公
報に記載されている技術は、いずれも、SAW装置の小
型化という点に関しては、優れているものの、製造工程
が複雑になる等の原因で、製造コストが嵩んでしまうと
いう問題点がある。
However, the techniques described in JP-A-4-293310 and JP-A-2-186662 are all excellent in terms of downsizing the SAW device. However, there is a problem that the manufacturing cost is increased due to a complicated manufacturing process.

【0007】すなわち、前者の従来技術(特開平4−2
93310号公報)では、SAW素子の接地電極とパッ
ケージ基板の接地電極とを電気的に接続すると共に、両
者間を一定の間隙を有するよう金属枠を形成すべく、両
者の電極間を半田材で接続するには、いずれの電極も半
田ぬれ性が良く且つ半田食われのない金属面でなければ
ならない。このため、両接地電極表面をメタライズ処理
を施す必要がある。特に、SAW素子の接地電極はその
近傍に交差指電極があるため、この交差指電極までメタ
ライズ処理を施さないよう、マスク等を使用して正確に
面倒なメタライズ処理を行わなければならない。具体的
には、例えば、接地電極本体が純Al或いはAl系合金
で形成されている場合、はんだ食われを防ぐためTiや
Cr等のバリヤメタルでこの接地電極本体を覆い、さら
にその上に、半田濡れ性を確保するためCuやNi等の
金属を積層する等のメタライズ処理を施さなければなけ
ればならない。さらに、半田材が交差指電極等に流れな
いよう、半田ダム等も形成しなければならず、製造工程
が増加して製造コストが嵩んでしまう。また、後者の従
来技術(特開平2−186662号公報)では、樹脂性
接着材の外側を更に金属材で覆う方法として、真空容器
内でのスパッタリングによる蒸着等が考えられるが、こ
の場合、製造設備コストが嵩むと共に、金属材の成膜に
時間がかかる。
That is, the former prior art (Japanese Patent Laid-Open No. 4-2
No. 93310), the ground electrode of the SAW element and the ground electrode of the package substrate are electrically connected to each other, and a metal frame is formed so as to have a constant gap between the two electrodes by a solder material. In order to connect, all electrodes must have a metal surface with good solder wettability and free from solder erosion. Therefore, it is necessary to subject the surfaces of both ground electrodes to metallization. In particular, since the ground electrode of the SAW element has an interdigital electrode in the vicinity thereof, it is necessary to accurately perform a troublesome metallizing process using a mask or the like so that the interdigital electrode is not subjected to the metallizing process. Specifically, for example, when the ground electrode body is made of pure Al or an Al-based alloy, the ground electrode body is covered with a barrier metal such as Ti or Cr in order to prevent solder erosion, and solder is further formed on the ground electrode body. In order to secure the wettability, it is necessary to perform a metallizing process such as laminating a metal such as Cu or Ni. Further, a solder dam or the like must be formed so that the solder material does not flow to the interdigital electrodes, etc., which increases the number of manufacturing steps and increases the manufacturing cost. In the latter prior art (Japanese Patent Laid-Open No. 2-186662), vapor deposition by sputtering in a vacuum container may be considered as a method of further covering the outside of the resinous adhesive with a metal material. The facility cost increases and it takes time to form the metal film.

【0008】本発明は、このような従来の問題点に着目
してなされたもので、装置の小型化を図れると共に、製
造コストの削減することができるSAW装置、及びその
製造方法を提供することを目的とする。
The present invention has been made by paying attention to such a conventional problem, and provides a SAW device capable of downsizing the device and reducing the manufacturing cost, and a manufacturing method thereof. With the goal.

【0009】[0009]

【課題を解決するための手段】前記目的を達成するため
のSAW装置は、圧電基板、及び該圧電基板の表面上に
形成された交差指電極、該交差指電極に電力を供給する
ための電極パッドを有する弾性表面波素子(以下、SA
W素子という)と、該SAW素子が搭載され、該SAW
素子の前記電極パッドに電力を供給するための電極パッ
ドが形成されているパッケージ基板とを備えているSA
W装置において、前記SAW素子の表面(前記交差指電
極及び前記電極パッドが形成されている側の面)と前記
パッケージ基板の表面(前記SAW素子の電極パッドに
電力を供給するための前記電極パッドが形成されている
側の面)とが対向し、該SAW素子の表面に形成されて
いる前記交差指電極と該パッケージ基板の表面との間に
一定の間隔の空間が形成されるよう、両者の電極パッド
相互間に導電材が介在して、両者の電極パッド相互が電
気的に接続され、前記空間が外部空間から遮蔽されるよ
う、少なくとも前記SAW素子と前記パッケージ基板と
の間で前記空間の周囲が、半田濡れ性が良く且つ半田食
われのない金属粒子を含有する樹脂材(以下、金属粒子
含有樹脂材とする。)で覆われ、前記金属粒子含有樹脂
材の外側表面が半田材で覆われていることを特徴とする
ものである。
A SAW device for achieving the above object comprises a piezoelectric substrate, an interdigital electrode formed on the surface of the piezoelectric substrate, and an electrode for supplying electric power to the interdigital electrode. Surface acoustic wave device having a pad (hereinafter, SA
W element) and the SAW element mounted,
SA including an electrode pad for supplying electric power to the electrode pad of the device.
In the W device, the surface of the SAW element (the surface on which the interdigital electrode and the electrode pad are formed) and the surface of the package substrate (the electrode pad for supplying electric power to the electrode pad of the SAW element) (The surface on the side on which is formed), so that a space with a constant interval is formed between the interdigital electrode formed on the surface of the SAW element and the surface of the package substrate. A conductive material is interposed between the electrode pads to electrically connect the electrode pads to each other, so that the space is shielded from an external space, at least between the SAW element and the package substrate. Is covered with a resin material containing metal particles having good solder wettability and free from solder erosion (hereinafter referred to as metal particle-containing resin material), and the outer surface of the metal particle-containing resin material is semi-finished. And it is characterized in that it is covered with wood.

【0010】ここで、前記SAW装置において、前記空
間の周囲を囲むよう、前記SAW素子と前記パッケージ
基板との間で、前記空間の外周で且つ前記金属粒子含有
樹脂材の該空間側に、絶縁性樹脂を配してもよい。ま
た、前記SAW装置において、前記SAW素子の前記電
極パッドと前記パッケージ基板の前記電極パッドとの間
に、剛性を有する空間確保用導電材と異方性導電材を含
有する樹脂接着剤又は樹脂接着シート(以下、異方性導
電材含有樹脂材とする。)とを介在させて、両者の電極
パッド相互を電気的に接続し、この異方性導電材含有樹
脂材で前記空間の周囲をさらに囲うようにしてもよい。
また、以上のSAW装置において、SAW装置のサイズ
がある程度大きい場合には、前記パッケージ基板の基板
本体をリチウムアルミノシリケート系セラミックスで形
成することが好ましい。
Here, in the SAW device, insulation is provided between the SAW element and the package substrate so as to surround the space, at the outer periphery of the space and on the space side of the metal particle-containing resin material. A resin may be provided. Further, in the SAW device, between the electrode pad of the SAW element and the electrode pad of the package substrate, a resin adhesive or resin adhesive containing a rigid space securing conductive material and an anisotropic conductive material. A sheet (hereinafter referred to as an anisotropic conductive material-containing resin material) is interposed to electrically connect the two electrode pads to each other, and the anisotropic conductive material-containing resin material further surrounds the space. You may enclose it.
Further, in the above SAW device, when the size of the SAW device is large to some extent, it is preferable that the substrate body of the package substrate is made of lithium aluminosilicate ceramics.

【0011】[0011]

【作用】本発明では、交差指電極上の空間を外部空間か
ら完全に気密封止すべく、この空間の側周を直接半田材
で覆うのではなく、金属粒子含有樹脂材で覆った後、そ
の外側表面を半田材で覆っている。このため、SAW素
子の電極パッドとパッケージ基板の電極パッドとの電気
的な接続に関しては、半田材を使用する必要性が無くな
り、各種接続方法を選択することができる。すなわち、
SAW素子の電極パッドに対してメタライズ処理を施す
必要性のない接続方法を採用することができる。但し、
交差指電極上の空間を確保すべく、SAW素子の電極パ
ッドとパッケージ基板の電極パッドとの間に、剛性を有
する導電材を介在させる必要がある。
In the present invention, in order to completely hermetically seal the space above the interdigital electrode from the external space, the side periphery of this space is not directly covered with the solder material, but after being covered with the metal particle-containing resin material, The outer surface is covered with a solder material. Therefore, for electrical connection between the electrode pad of the SAW element and the electrode pad of the package substrate, it is not necessary to use a solder material, and various connection methods can be selected. That is,
It is possible to adopt a connection method that does not require the metallizing process on the electrode pad of the SAW element. However,
In order to secure a space above the interdigital electrodes, it is necessary to interpose a conductive material having rigidity between the electrode pad of the SAW element and the electrode pad of the package substrate.

【0012】そこで、SAW素子の電極パッドにメタラ
イズ処理を施すことなく、SAW素子の電極パッドとパ
ッケージ基板の電極パッドとの間に剛性を有する導電材
を介在させ、両電極パッドを電気的に接続する接続方法
としては、具体的には、例えば、半導体集積回路のフェ
イスダウン接続によく用いられるワイヤバンプ法で、S
AW素子の電極パッド上にバンプ(剛性を有する導電
材)を形成し、このバンプとパッケージ基板の電極パッ
ドとを熱圧着法か熱超音波法で接続する方法が考えられ
る。また、この他、SAW素子の電極パッド上にバンプ
を形成した後、このバンプとパッケージ基板の電極パッ
ドとの間に、異方性導電材含有樹脂接着剤、又は異方性
導電材含有樹脂接着シートを配して、この接着剤又は接
着シートでバンプとパッケージ基板の電極パッドとを接
続する方法も考えられる。
Therefore, a rigid conductive material is interposed between the electrode pad of the SAW element and the electrode pad of the package substrate without performing the metallizing process on the electrode pad of the SAW element to electrically connect both electrode pads. As a connection method to be performed, specifically, for example, a wire bump method often used for face-down connection of a semiconductor integrated circuit is used.
A method is conceivable in which a bump (a conductive material having rigidity) is formed on the electrode pad of the AW element, and the bump and the electrode pad of the package substrate are connected by a thermocompression bonding method or a thermosonic method. In addition, after forming a bump on the electrode pad of the SAW element, an anisotropic conductive material-containing resin adhesive or an anisotropic conductive material-containing resin adhesive is formed between the bump and the electrode pad of the package substrate. A method of arranging a sheet and connecting the bump and the electrode pad of the package substrate with this adhesive or the adhesive sheet is also conceivable.

【0013】また、本発明では、交差指電極上の空間を
覆う樹脂材として、半田濡れ性が良く且つ半田食われの
ない金属粒子を含有している樹脂材を使用しているの
で、この外側を金属材で覆う場合、通常の環境下におい
て容易に施すことができる半田材を使用することができ
る。このため、樹脂材の外側を金属で覆う場合、特殊な
装置を使用する必要性が無くなる。
Further, in the present invention, since the resin material containing the metal particles having good solder wettability and free from solder erosion is used as the resin material for covering the space above the interdigital electrode, When the is covered with a metal material, a solder material that can be easily applied in a normal environment can be used. Therefore, when covering the outside of the resin material with metal, it is not necessary to use a special device.

【0014】このように、本発明では、面倒なメタライ
ズ処理工程や半田ダム形成工程の削除することができる
と共に、特殊な装置を使用する必要性が無くなるので、
製造コストの削減を図ることができる。
As described above, according to the present invention, the troublesome metallizing process and the solder dam forming process can be eliminated, and the need for using a special device is eliminated.
The manufacturing cost can be reduced.

【0015】[0015]

【実施例】以下、本発明に係るSAW装置の各種実施例
について、図1〜図8を用いて説明する。まず、本発明
に係るSAW装置の第1の実施例について、図1〜図6
を用いて説明する。
EXAMPLES Various examples of the SAW device according to the present invention will be described below with reference to FIGS. First, a first embodiment of the SAW device according to the present invention will be described with reference to FIGS.
Will be explained.

【0016】本実施例のSAW装置は、図1に示すよう
に、SAW素子10と、このSAW素子10が搭載され
るパッケージ基板20とを有して構成されている。
As shown in FIG. 1, the SAW device of the present embodiment is configured to have a SAW element 10 and a package substrate 20 on which the SAW element 10 is mounted.

【0017】SAW素子10は、図1及び図4に示すよ
うに、圧電基板11と、この基板11の一方の面(以
下、この面を表面12、他方の面を裏面13とする。)
上に形成されている交差指電極14,14,…、この交
差指電極14,14,…に電力を供給するための電極、
つまり信号電極15,15及び接地電極16,16,…
とを有して構成されている。なお、図1におけるSAW
素子10の断面は、図4におけるI−I線断面である。
この交差指電極14,14,…は、圧電基板11の表面
12上の中央近傍に形成され、信号電極15,15及び
接地電極16,16,…は、圧電基板11の表面12上
の周辺側に点在して形成されている。これら交差指電極
14、信号電極15、接地電極16は、いずれも、純A
l或いはAl系合金で形成されている。信号電極15及
び接地電極16上には、それぞれ、半導体集積回路のフ
ェイスダウン接続時に用いられるワイヤバンプ法にて、
Au又はAl線による信号電極バンプ17及び接地電極
バンプ18が形成されている。なお、これらバンプ1
7,18はAu又はAlで形成され、電極15,16は
純Al或いはAl系合金で形成されているため、電極1
5,16に対して何らメタライズ処理を施すことなく、
ワイヤバンプ法で電極15,16上にバンプ17,18
を形成することができる。すなわち、電極15,16上
にバンプ17,18をワイヤバンプ法で形成する場合、
電極15,16を形成する材料との比較において、バン
プ17,18を形成する材料を考慮すれば、特別に新た
な技術を導入しなくとも、電極15,16に対してメタ
ライズ処理を施す必要はない。
As shown in FIGS. 1 and 4, the SAW element 10 includes a piezoelectric substrate 11 and one surface of the substrate 11 (hereinafter, this surface is referred to as a front surface 12 and the other surface is referred to as a back surface 13).
The interdigitated electrodes 14, 14, ... Formed on the electrodes, the electrodes for supplying electric power to the interdigitated electrodes 14, 14 ,.
That is, the signal electrodes 15, 15 and the ground electrodes 16, 16, ...
And is configured. Note that the SAW in FIG.
The cross section of the element 10 is a cross section taken along the line I-I in FIG. 4.
The interdigital electrodes 14, 14, ... Are formed near the center of the surface 12 of the piezoelectric substrate 11, and the signal electrodes 15, 15 and the ground electrodes 16, 16 ,. Are scattered around. These crossing finger electrodes 14, signal electrodes 15, and ground electrodes 16 are all pure A
1 or Al alloy. On the signal electrode 15 and the ground electrode 16, respectively, by the wire bump method used for face-down connection of the semiconductor integrated circuit,
A signal electrode bump 17 and a ground electrode bump 18 made of Au or Al wire are formed. In addition, these bumps 1
7 and 18 are made of Au or Al, and the electrodes 15 and 16 are made of pure Al or Al-based alloy.
5 and 16 without any metallization
Bumps 17, 18 on electrodes 15, 16 by the wire bump method
Can be formed. That is, when the bumps 17 and 18 are formed on the electrodes 15 and 16 by the wire bump method,
Considering the material forming the bumps 17 and 18, in comparison with the material forming the electrodes 15 and 16, it is not necessary to perform metallization on the electrodes 15 and 16 without introducing a new technique. Absent.

【0018】一方、パッケージ基板20は、図1〜図3
に示すように、基板本体21と、この基板本体21上に
形成されている信号電極25a,25b及び接地電極2
6a,26bとを有して構成されている。パッケージ基
板本体21の一方の面(以下、この面を表面22、他方
の面を裏面23とする。)上には、図2に示すように、
素子側信号電極25aがSAW素子10の信号電極15
と対応する位置に形成され、素子側接地電極26aがS
AW素子10の接地電極16と対応する位置及び素子側
信号電極25aを囲うようパッケージ基板本体20の周
辺に形成されている。また、パッケージ基板本体20の
裏面23上には、図3に示すように、外部側接地電極2
6bが基板本体21の裏面23いっぱいにH字形を成す
よう形成され、外部側信号電極25b,25bがこのH
字の凹み部分に該当する位置に形成されている。なお、
図1におけるパッケージ基板20の断面は、図2におけ
るI−I線断面である。また、図2において、×印の位
置がバンプ接続位置を示している。パッケージ基板本体
21の表面22上に形成されている素子側信号電極25
a及び素子側接地電極26aは、それぞれ、スルーホー
ル27,28を介して、基板本体21の裏面23上に形
成されている外部側信号電極25b、外部側接地電極2
6bと接続されている。パッケージ基板本体21は、リ
チウムアルミノシリケート系セラミックスで形成され、
信号電極25a,25b及び接地電極26a,26b
は、焼結W又は焼結Cuで形成されている。パッケージ
基板20の素子側信号電極25a及び素子側接地電極2
6aは、対応するバンプ17,18との接合性を高める
ために、Niメッキ、及びその上からAuメッキが施さ
れている。
On the other hand, the package substrate 20 is shown in FIGS.
As shown in FIG. 2, the substrate body 21, and the signal electrodes 25 a and 25 b and the ground electrode 2 formed on the substrate body 21.
6a and 26b. On one surface of the package substrate body 21 (hereinafter, this surface is referred to as the front surface 22 and the other surface is referred to as the back surface 23), as shown in FIG.
The element-side signal electrode 25a is the signal electrode 15 of the SAW element 10.
And the element side ground electrode 26a is formed at a position corresponding to
It is formed around the package substrate body 20 so as to surround a position corresponding to the ground electrode 16 of the AW element 10 and the element-side signal electrode 25a. On the back surface 23 of the package substrate body 20, as shown in FIG.
6b is formed on the entire back surface 23 of the substrate body 21 so as to form an H shape, and the external signal electrodes 25b and 25b are
It is formed at a position corresponding to the concave portion of the character. In addition,
The cross section of the package substrate 20 in FIG. 1 is a cross section taken along the line I-I in FIG. 2. In addition, in FIG. 2, the position of the cross indicates the bump connection position. A device-side signal electrode 25 formed on the surface 22 of the package substrate body 21.
a and the element-side ground electrode 26a are the external-side signal electrode 25b and the external-side ground electrode 2 which are formed on the back surface 23 of the substrate body 21 through the through holes 27 and 28, respectively.
6b is connected. The package substrate body 21 is made of lithium aluminosilicate ceramics,
Signal electrodes 25a, 25b and ground electrodes 26a, 26b
Is formed of sintered W or sintered Cu. The element-side signal electrode 25a and the element-side ground electrode 2 of the package substrate 20
6a is Ni-plated and Au-plated thereon in order to enhance the bondability with the corresponding bumps 17 and 18.

【0019】パッケージ基板20とSAW素子10と
は、図1に示すように、両者の表面22,12が互いに
向い合い、且つパッケージ基板表面22とSAW素子1
0の表面12に形成されている交差指電極14との間に
一定の間隙ができるよう、接続されている。この接続
は、SAW素子10の信号電極バンプ17及び接地電極
バンプ18と、パッケージ基板20の素子側信号電極2
5a及び素子側接地電極26aとを、それぞれ、熱圧着
法又は熱超音波圧着法により接続することで、行われ
る。各バンプ17,18は、この場合、SAW素子10
の電極15,16とパッケージ基板20の電極25a,
26aとを電気的に接続すると共に、パッケージ基板表
面22とSAW素子10の表面12に形成されている交
差指電極14との間を一定の間隔に保つ役目を担ってい
る。
As shown in FIG. 1, the package substrate 20 and the SAW element 10 have their surfaces 22 and 12 facing each other, and the package substrate surface 22 and the SAW element 1 are arranged.
It is connected so as to form a constant gap with the interdigitated electrode 14 formed on the surface 12 of 0. This connection is made by connecting the signal electrode bumps 17 and the ground electrode bumps 18 of the SAW device 10 to the device-side signal electrodes 2 of the package substrate 20.
5a and the element-side ground electrode 26a are connected by a thermocompression bonding method or a thermosonic compression bonding method, respectively. In this case, each of the bumps 17 and 18 has a SAW element 10.
Electrodes 15 and 16 of the package substrate 20 and the electrodes 25a of the package substrate 20,
26a and electrically connects the package substrate surface 22 and the cross finger electrode 14 formed on the surface 12 of the SAW element 10 at a constant distance.

【0020】パッケージ基板20に搭載されているSA
W素子10は、図1に示すように、その裏面13、その
側周面19、及びその表面12の周囲側部分12aが金
属粒子含有接着剤30で覆われている。SAW素子10
の側周面19、及びその表面12の周囲側部分12aを
覆う金属粒子含有接着剤30で、パッケージ基板表面2
2とSAW素子10の表面に形成されている交差指電極
14との間に形成されている空間Sが外部から遮蔽され
る。すなわち、この空間Sは、図1において、上方がS
AW素子10に覆われ、下方がパッケージ基板20によ
り覆われ、空間Sの側周が金属粒子含有接着剤30(図
5に示す。)で覆われていることになる。金属粒子含有
接着剤30の金属粒子は、半田濡れ性が良く且つ半田食
われのないCu系の金属を用いている。また、金属粒子
含有接着剤30の接着剤自体は、熱硬化するエポキシ系
接着剤である。
SA mounted on the package substrate 20
As shown in FIG. 1, the W element 10 has a back surface 13, a side peripheral surface 19, and a peripheral side portion 12 a of the front surface 12 covered with a metal particle-containing adhesive 30. SAW element 10
With the metal particle-containing adhesive 30 that covers the side peripheral surface 19 of the and the peripheral side portion 12a of the surface 12, the package substrate surface 2
The space S formed between 2 and the interdigital electrode 14 formed on the surface of the SAW element 10 is shielded from the outside. That is, the space S in FIG.
This is covered with the AW element 10, the lower part is covered with the package substrate 20, and the side periphery of the space S is covered with the metal particle-containing adhesive 30 (shown in FIG. 5). As the metal particles of the metal particle-containing adhesive 30, a Cu-based metal having good solder wettability and free from solder erosion is used. The adhesive itself of the metal particle-containing adhesive 30 is a thermosetting epoxy adhesive.

【0021】但し、通常、樹脂は、水分や気体を完全に
遮断することはできない。このため、本実施例では、硬
化した金属粒子含有接着剤30の外側をさらに半田材3
5で覆って、SAW素子10の表面12に形成されてい
る交差指電極14上の空間Sを外部空間から気密封止し
ている。硬化した接着剤30には、半田濡れ性が良く且
つ半田食われのない金属粒子が含有して、半田材35と
の接合性が良いため、溶融している半田材35を通常の
環境下においてその外側に単に付けるだけで、この接着
剤30を金属(この場合は半田材35)で覆うことがで
きる。
However, normally, the resin cannot completely block moisture and gas. Therefore, in the present embodiment, the solder material 3 is further attached to the outside of the cured adhesive 30 containing metal particles.
5, the space S on the interdigital electrode 14 formed on the surface 12 of the SAW element 10 is hermetically sealed from the external space. The cured adhesive 30 contains metal particles having good solder wettability and no solder erosion, and has good bondability with the solder material 35. The adhesive 30 can be covered with a metal (in this case, the solder material 35) by simply attaching it to the outside.

【0022】ところで、空間Sの側周を覆う金属粒子含
有接着剤30は、図1に示すように、パッケージ基板本
体21の表面22上の周囲に形成されている素子側接地
電極26a上に付着することになるが、素子側接地電極
26aの周縁部26a’にまで至らないように、供給さ
れている。この接地電極26aの周縁部26a’上は、
半田材35で覆われている。すなわち、半田材35によ
り、金属粒子含有接着剤30の外側表面、及び接地電極
26aの周縁部26a’が覆われている。このように、
パッケージ基板20と金属粒子含有接着剤30との境界
部分の外側が金属(この場合半田材35とパッケージ基
板20の素子側接地電極26a)で塞がれているため、
交差指電極14上の空間Sを外部空間から、より完全に
気密封止することができる。なお、素子側接地電極26
aは、前述したように、Niメッキ、及びその上からA
uメッキが施されているため、バンプ17,18との接
合性のみならず、半田濡れ性も良い。
By the way, the metal particle-containing adhesive 30 covering the side periphery of the space S adheres to the element-side ground electrode 26a formed on the periphery of the surface 22 of the package substrate body 21, as shown in FIG. However, it is supplied so as not to reach the peripheral portion 26a ′ of the element-side ground electrode 26a. On the peripheral portion 26a 'of the ground electrode 26a,
It is covered with the solder material 35. That is, the solder material 35 covers the outer surface of the metal particle-containing adhesive 30 and the peripheral portion 26a ′ of the ground electrode 26a. in this way,
Since the outside of the boundary portion between the package substrate 20 and the metal particle-containing adhesive 30 is covered with a metal (in this case, the solder material 35 and the element-side ground electrode 26a of the package substrate 20),
The space S on the interdigital electrode 14 can be more completely hermetically sealed from the external space. The element-side ground electrode 26
As mentioned above, a is Ni plating, and
Since u plating is applied, not only the bondability with the bumps 17 and 18 but also the solder wettability is good.

【0023】次に、本実施例のSAW装置の製造方法に
ついて、図6を用いて説明する。同図(a)は、多数個
取りパッケージ基板100を示している。この多数個取
パッケージ基板100には、既に、前述した電極25
a,26a,25b,26b及びスルホール27,28
が所定の位置に形成されている。また、各電極25a,
26a,25b,26bの表面には、Ni及びAuメッ
キが施されている。また、複数のパッケージ基板20,
20,…を有する多数個取パッケージ基板100には、
各パッケージ基板20,20相互間の境界線に沿って、
溝101が形成されている。
Next, a method of manufacturing the SAW device of this embodiment will be described with reference to FIG. FIG. 1A shows a multi-cavity package substrate 100. The multi-cavity package substrate 100 already has the electrodes 25 described above.
a, 26a, 25b, 26b and through holes 27, 28
Are formed at predetermined positions. In addition, each electrode 25a,
The surfaces of 26a, 25b and 26b are plated with Ni and Au. In addition, a plurality of package substrates 20,
The multi-cavity package substrate 100 having 20, ...
Along the boundary line between the package substrates 20 and 20,
The groove 101 is formed.

【0024】同図(b)は、多数個取りパッケージ基板
100の各パッケージ基板20,20,…に、それぞれ
SAW素子10,10,…を対向接続した状態を示して
いる。SAW素子10の各電極15,16上には、パッ
ケージ基板20との接続前に、バンプ17,18が前述
したようにワイヤバンプ法で形成されている。パッケー
ジ基板20とSAW素子10との接続の際には、まず、
多数個取りパッケージ基板100の所定位置上に、両者
の表面12,22が互いに対向するように、複数のSA
W素子10,10,…を置く。そして、各SAW素子1
0,10,…の上面、ここでは裏面13,13,…か
ら、各SAW素子10,10,…に超音波を印加しつ
つ、加熱する。すると、パッケージ基板20の素子側電
極25a,26aにNi及びAuメッキが施されている
ため、この素子側電極25a,26aとバンプ17,1
8とが一括して接続される。
FIG. 2B shows a state in which the SAW devices 10, 10, ... Are respectively connected to the package substrates 20, 20 ,. The bumps 17 and 18 are formed on the electrodes 15 and 16 of the SAW element 10 by the wire bump method as described above, before being connected to the package substrate 20. When connecting the package substrate 20 and the SAW element 10, first,
A plurality of SAs are arranged on a predetermined position of the multi-cavity package substrate 100 so that their front surfaces 12 and 22 face each other.
The W elements 10, 10, ... Are placed. Then, each SAW element 1
.. are heated while applying ultrasonic waves to the SAW elements 10, 10 ,. Then, since the device-side electrodes 25a and 26a of the package substrate 20 are plated with Ni and Au, the device-side electrodes 25a and 26a and the bumps 17 and 1 are formed.
8 and 8 are connected together.

【0025】同図(c)は、複数のSAW素子10,1
0,…が接続された多数個取りパッケージ基板100上
に、金属粒子含有接着剤用印刷マスク102を置いた状
態を示している。この印刷マスク102には、SAW素
子10の大きさよりも僅かに大きい開口103が複数形
成されている。この印刷マスク102を多数個取りパッ
ケージ基板100上に置く際には、この印刷マスク10
2の開口103,103,…の部分にSAW素子10,
10,…が来るようにする。
FIG. 1C shows a plurality of SAW elements 10, 1.
It shows a state in which the metal particle-containing adhesive printing mask 102 is placed on the multi-cavity package substrate 100 to which 0, ... Are connected. In this print mask 102, a plurality of openings 103 that are slightly larger than the size of the SAW element 10 are formed. When placing a large number of this print mask 102 on the package substrate 100, the print mask 10
, The SAW element 10,
Make 10, ... come.

【0026】同図(d)は、金属粒子含有接着剤30を
印刷供給した状態を示している。SAW素子10を金属
粒子含有接着剤30で覆う場合、印刷マスク102の開
口103,103,…に、金属粒子含有接着剤30を供
給する。すると、金属粒子含有接着剤30は目的の位置
に供給され、SAW素子10が金属粒子含有接着剤30
で覆われ、交差指電極14上の空間Sが外部空間から遮
蔽される。
FIG. 3D shows a state in which the adhesive 30 containing metal particles is printed and supplied. When the SAW element 10 is covered with the metal particle-containing adhesive 30, the metal particle-containing adhesive 30 is supplied to the openings 103, 103, ... Of the print mask 102. Then, the metal particle-containing adhesive 30 is supplied to the target position, and the SAW element 10 is supplied with the metal particle-containing adhesive 30.
And the space S on the interdigital electrode 14 is shielded from the external space.

【0027】金属粒子含有接着剤30を印刷供給した
後、同図(e)に示すように、印刷マスクを取り除き、
金属粒子含有接着剤30を加熱硬化される。この加熱硬
化に必要な加熱温度及び加熱時間は、本実施例におい
て、それぞれ150℃、20〜30分である。この加熱
温度及び加熱時間は、金属粒子含有接着剤30の接着剤
自体の種類応じて定められるものであり、一概に定めら
れるものではないことは言うまでもない。
After the metal particle-containing adhesive 30 is printed and supplied, the print mask is removed as shown in FIG.
The metal particle-containing adhesive 30 is cured by heating. In this example, the heating temperature and the heating time required for this heat curing are 150 ° C. and 20 to 30 minutes, respectively. It goes without saying that the heating temperature and the heating time are determined according to the type of the adhesive itself of the metal particle-containing adhesive 30 and are not determined unconditionally.

【0028】金属粒子含有接着剤30が硬化すると、そ
の外側表面に半田フラックスを塗布する。そして、SA
W素子10の部分をその裏面13側から半田槽に浸漬し
て、同図(f)に示すように、硬化した金属粒子含有接
着剤30の外側表面を半田材35で覆い、交差指電極1
4上の空間Sを外部空間から完全に気密封止する。以上
で、複数のSAW装置が基本的に完成する。このよう
に、複数のSAW装置がつらなっている状態で、各SA
W装置の特性検査を実行する。
When the adhesive 30 containing metal particles is hardened, solder flux is applied to the outer surface thereof. And SA
The portion of the W element 10 is immersed in the solder bath from the back surface 13 side thereof, and the outer surface of the cured metal particle-containing adhesive 30 is covered with the solder material 35 as shown in FIG.
The space S above 4 is completely hermetically sealed from the external space. With the above, a plurality of SAW devices are basically completed. In this way, each SA is connected with a plurality of SAW devices.
Perform the characteristic inspection of the W device.

【0029】最終的には、同図(g)に示すように、多
数個取りパッケージ基板100の溝101に沿って、多
数個取りパッケージ基板100を折って、各SAW装置
毎に分離する。なお、多数個取りパッケージ基板100
に設けた溝101は、工程の最後に分離し易くするため
のものであり、ダイサー等で切断する場合は特に必要で
はない。
Finally, as shown in FIG. 9G, the multi-cavity package substrate 100 is folded along the groove 101 of the multi-cavity package substrate 100 to separate each SAW device. In addition, a multi-piece package substrate 100
The groove 101 provided in the above is for facilitating separation at the end of the process, and is not particularly necessary when cutting with a dicer or the like.

【0030】以上のように、本実施例では、交差指電極
14上の空間Sを外部空間から完全に気密封止すべく、
この空間Sの側周を直接半田材で覆うのではなく、金属
粒子含有接着剤30で覆った後、その外側表面を半田材
35で覆っている。このため、SAW素子10の電極1
6とパッケージ基板20の電極26aと電気的な接続に
関しては、半田材を使用する必要性が無くなり、各種接
続方法を選択することができる。すなわち、SAW素子
10の各電極15,16に対してメタライズ処理を施す
必要性のない接続方法を採用することができる。この結
果、SAW素子10の各電極15,16に対して、非常
に面倒なメタライズ処理を施す工程や半田ダム形成工程
を削除することができる。
As described above, in this embodiment, the space S on the interdigital electrode 14 is completely airtightly sealed from the external space.
The side periphery of the space S is not directly covered with the solder material, but is covered with the metal particle-containing adhesive 30 and then the outer surface thereof is covered with the solder material 35. Therefore, the electrode 1 of the SAW element 10
Regarding the electrical connection between 6 and the electrode 26a of the package substrate 20, there is no need to use a solder material, and various connection methods can be selected. That is, it is possible to employ a connection method that does not require the metallizing process on the electrodes 15 and 16 of the SAW element 10. As a result, it is possible to eliminate the step of performing a very troublesome metallizing process and the solder dam forming step on the electrodes 15 and 16 of the SAW element 10.

【0031】また、本実施例では、交差指電極14上の
空間Sの側周を覆う接着剤として、半田濡れ性が良く且
つ半田食われのない金属粒子を含有している接着剤30
を使用しているので、この外側を金属材で覆う場合、通
常の環境下において容易に施すことができる半田材35
を使用することができる。このため、接着剤の外側を金
属で覆う場合、特殊な装置を使用する必要性が無くな
る。また、半田材35で接着剤30の外側表面を覆う場
合、SAW素子10を単に半田槽内に浸漬しすればよい
ので、作業自体も非常に容易になる。
Further, in this embodiment, as the adhesive covering the side periphery of the space S on the interdigital electrode 14, an adhesive 30 containing metal particles having good solder wettability and free from solder erosion.
When the outer side is covered with a metal material, the solder material 35 can be easily applied in a normal environment.
Can be used. For this reason, it is not necessary to use a special device when the outside of the adhesive is covered with metal. Further, when the outer surface of the adhesive 30 is covered with the solder material 35, the SAW element 10 only needs to be immersed in the solder bath, so that the work itself becomes very easy.

【0032】このように、本実施例では、面倒な工程の
削除することができると共に、特殊な装置を使用する必
要性が無くなるので、製造コストの削減を図ることがで
きる。
As described above, in this embodiment, it is possible to eliminate the troublesome process and eliminate the need to use a special device, so that the manufacturing cost can be reduced.

【0033】さらに、本実施例では、SAW素子10に
用いられる圧電基板11とパッケージ基板本体21との
熱膨張率差を考慮して、パッケージ基板本体21の材料
を選定しているので、SAW素子10とパッケージ基板
20との接続後における製造プロセス過程或いはSAW
装置の使用中における温度変化による両者の熱膨張差を
最小限に抑えることができる。この結果、両者の接続部
分における疲労破壊を防ぐことができる。ここで、圧電
基板11及びパッケージ基板本体21の熱膨張率につい
て、簡単に説明する。圧電基板11を形成する圧電結晶
(通常、LiTaO3やLiNbO3などの結晶であ
る。)の熱膨張率は、その結晶面方位によっては15×
10~6/℃を超えるものがある。これに対して、本実施
例において、パッケージ基板本体21を形成するリチウ
ムアルミノシリケート系セラミックスの熱膨張率は、8
〜18×10~6/℃で、セラミックスとしては比較的熱
膨張率が大きく且つ広範囲である。このため、リチウム
アルミノシリケート系セラミックス材のうち、圧電基板
11の熱膨張率に近いものを選定することにより、圧電
基板11とパッケージ基板本体21との熱膨張率差を最
小限に抑えることができる。
Further, in this embodiment, the material of the package substrate body 21 is selected in consideration of the difference in the coefficient of thermal expansion between the piezoelectric substrate 11 used for the SAW element 10 and the package substrate body 21, so that the SAW element is selected. Manufacturing process or SAW after connection between the package 10 and the package substrate 20
The difference in thermal expansion between the two due to temperature changes during use of the device can be minimized. As a result, it is possible to prevent fatigue failure in the connection portion between the both. Here, the thermal expansion coefficients of the piezoelectric substrate 11 and the package substrate body 21 will be briefly described. The coefficient of thermal expansion of the piezoelectric crystal (usually a crystal such as LiTaO 3 or LiNbO 3 ) forming the piezoelectric substrate 11 is 15 × depending on the crystal plane orientation.
Some exceed 10 to 6 / ° C. On the other hand, in this embodiment, the coefficient of thermal expansion of the lithium aluminosilicate ceramics forming the package substrate body 21 is 8
In ~18 × 10 ~ 6 / ℃, a and widespread relatively thermal expansion coefficient is large as ceramics. Therefore, by selecting a lithium aluminosilicate-based ceramic material having a coefficient of thermal expansion close to that of the piezoelectric substrate 11, the difference in coefficient of thermal expansion between the piezoelectric substrate 11 and the package substrate body 21 can be minimized. .

【0034】次に、本発明に係るSAW装置の第2の実
施例について、図7を用いて説明する。本実施例のSA
W装置は、交差指電極14上の空間Sの側周で、且つ金
属粒子含有接着剤30よりも内側(空間S側)に、絶縁
樹脂31を設けたものであり、その他の構成に関しては
第1の実施例と同様である。絶縁樹脂31として、ここ
では、エポキシ系樹脂を用いている。
Next, a second embodiment of the SAW device according to the present invention will be described with reference to FIG. SA of this embodiment
The W device is one in which the insulating resin 31 is provided on the side circumference of the space S on the interdigital electrode 14 and inside the metal particle-containing adhesive 30 (on the side of the space S). This is similar to the first embodiment. An epoxy resin is used here as the insulating resin 31.

【0035】絶縁樹脂31は、SAW素子10とパッケ
ージ基板20との接続後に、シリンジにて該当位置に供
給する。そして、この絶縁樹脂31を加熱硬化させた
後、金属粒子含有接着剤30を印刷供給する。
The insulating resin 31 is supplied to the corresponding position with a syringe after the SAW element 10 and the package substrate 20 are connected. Then, after the insulating resin 31 is heated and cured, the metal particle-containing adhesive 30 is printed and supplied.

【0036】本実施例では、第1の実施例と同様の効果
を得ることができると共に、金属粒子含有接着剤30の
印刷供給過程において、交差指電極14の金属粒子含有
接着剤30からの汚染を絶縁樹脂31で防ぐことができ
る。
In this embodiment, the same effect as that of the first embodiment can be obtained, and in the process of printing and supplying the metal particle-containing adhesive 30, the cross finger electrodes 14 are contaminated by the metal particle-containing adhesive 30. Can be prevented by the insulating resin 31.

【0037】次に、本発明に係るSAW装置の第3の実
施例について、図8を用いて説明する。本実施例は、S
AW素子10に接続されているバンプ17,18とパッ
ケージ基板20の素子側電極25a,26aとを接続す
る際に、異方性導電材含有接着剤32を用いたものであ
る。異方性導電材含有接着剤32は、接着剤中の導電材
に特定の処理を施して、接着剤に荷重がかかると、この
荷重が集中している所に導電材が集まるようにしたもの
である。このため、SAW素子10に接続されているバ
ンプ17,18に、この異方性導電材含有接着剤32を
供給して、バンプ17,18が接続されているSAW素
子10をパッケージ基板20に押し付けると、図8に示
すように、異方性導電材含有接着剤32中の導電材がバ
ンプ17,18とパッケージ基板20の素子側電極25
a,26aと間に集まって、両者間が電気的に接続され
る。
Next, a third embodiment of the SAW device according to the present invention will be described with reference to FIG. In this embodiment, S
An anisotropic conductive material-containing adhesive 32 is used when connecting the bumps 17 and 18 connected to the AW device 10 and the device-side electrodes 25a and 26a of the package substrate 20. The anisotropic conductive material-containing adhesive 32 is one in which the conductive material in the adhesive is subjected to a specific treatment so that when the load is applied to the adhesive, the conductive material gathers at the place where the load is concentrated. Is. Therefore, the anisotropic conductive material-containing adhesive 32 is supplied to the bumps 17 and 18 connected to the SAW element 10, and the SAW element 10 to which the bumps 17 and 18 are connected is pressed against the package substrate 20. Then, as shown in FIG. 8, the conductive material in the anisotropic conductive material-containing adhesive 32 causes the bumps 17 and 18 and the element-side electrode 25 of the package substrate 20.
a, 26a and the two are electrically connected to each other.

【0038】従って、SAW素子10のバンプ17,1
8とパッケージ基板20の素子側電極25a,26aと
間を電気的に接続するために、素子側電極25a,26
aにメッキを施す必要がなくなる。また、この異方性導
電材含有接着剤32は、先に説明した第2の実施例の絶
縁樹脂31と同様に、交差指電極14上の空間Sの側周
で、且つ金属粒子含有接着剤30よりも内側に位置する
ことになるので、交差指電極14の汚染も防ぐことがで
きる。つまり、異方性導電材含有接着剤32を用いるこ
とにより、SAW素子10のバンプ17,18とパッケ
ージ基板20の素子側電極25a,26aとの間の電気
的に接続、及び交差指電極14の汚染防止を同一工程で
処理することができる。なお、異方性導電材含有接着剤
32の替わりに、市販されている異方性導電シートを用
いても、同様の効果を得ることができる。
Therefore, the bumps 17, 1 of the SAW element 10 are
8 and the device-side electrodes 25a and 26a of the package substrate 20 are electrically connected to each other.
It is not necessary to plate a. Also, this anisotropic conductive material-containing adhesive 32 is, like the insulating resin 31 of the second embodiment described above, on the side periphery of the space S on the interdigital electrode 14 and also on the metal particle-containing adhesive. Since it is located inside 30, contamination of the interdigital electrode 14 can be prevented. That is, by using the anisotropic conductive material-containing adhesive 32, the bumps 17 and 18 of the SAW device 10 and the device side electrodes 25a and 26a of the package substrate 20 are electrically connected and the cross finger electrode 14 is electrically connected. Contamination control can be treated in the same step. The same effect can be obtained by using a commercially available anisotropic conductive sheet instead of the anisotropic conductive material-containing adhesive 32.

【0039】以上、本発明に係るSAW装置の各種実施
例における金属粒子含有接着剤30及び半田材35は、
いずれも、SAW素子10の裏面13側にも設けられて
いるが、これは半田材35の印刷供給工程において、半
田材35をディップ法にて供給するためであり、気密封
止のためにこのような構成にしたものではない。従っ
て、半田材35の供給工程において、ディップ法で半田
材35を供給しない場合には、金属粒子含有接着剤30
及び半田材35をSAW素子10の裏面13側にまで供
給する必要はない。
As described above, the metal particle-containing adhesive 30 and the solder material 35 in various examples of the SAW device according to the present invention are
Both of them are also provided on the back surface 13 side of the SAW element 10, but this is for supplying the solder material 35 by the dipping method in the printing supply process of the solder material 35, and for the purpose of hermetic sealing. It is not configured as such. Therefore, in the step of supplying the solder material 35, when the solder material 35 is not supplied by the dip method, the adhesive 30 containing the metal particles is used.
It is not necessary to supply the solder material 35 to the back surface 13 side of the SAW element 10.

【0040】また、以上の実施例において、パッケージ
基板20をリチウムアルミノシリケート系セラミックス
で形成したが、SAW装置が数mmサイズ以下の場合、
SAW素子10とパッケージ基板20との熱膨張差を考
慮する必要が無くなるので、このような場合には、パッ
ケージ基板20の形成材料として通常用いられているア
ルミナ系セラミックス(熱膨張率:6×10~6/℃)で
パッケージ基板20を形成してもよい。
In the above embodiment, the package substrate 20 is made of lithium aluminosilicate ceramics. However, when the SAW device has a size of several mm or less,
Since it is no longer necessary to consider the difference in thermal expansion between the SAW element 10 and the package substrate 20, in such a case, the alumina-based ceramics (coefficient of thermal expansion: 6 × 10 6) usually used as a material for forming the package substrate 20. The package substrate 20 may be formed at about 6 / ° C.).

【0041】[0041]

【発明の効果】本発明によれば、SAW素子の電極パッ
ドにメタライズ処理を施したり、半田ダムを形成する必
要が無くなる上に、スパッタ装置等の特殊な装置を使用
する必要が無くなるので、製造コストを削減することが
できる。
According to the present invention, it is not necessary to subject the electrode pad of the SAW element to metallization or to form a solder dam, and it is not necessary to use a special device such as a sputtering device. The cost can be reduced.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係る第1の実施例のSAW装置の断面
図である。
FIG. 1 is a sectional view of a SAW device according to a first embodiment of the present invention.

【図2】本発明に係る第1の実施例のパッケージ基板の
表面を示す図である。
FIG. 2 is a diagram showing the surface of the package substrate of the first embodiment according to the present invention.

【図3】本発明に係る第1の実施例のパッケージ基板の
裏面を示す図である。
FIG. 3 is a diagram showing a back surface of the package substrate according to the first embodiment of the present invention.

【図4】本発明に係る第1の実施例のSAW装置の表面
を示す図である。
FIG. 4 is a view showing the surface of the SAW device of the first embodiment according to the present invention.

【図5】図1におけるV−V線断面図である。5 is a sectional view taken along line VV in FIG.

【図6】本発明に係る第1の実施例のSAW装置の製造
過程を示す説明図である。
FIG. 6 is an explanatory view showing the manufacturing process of the SAW device of the first embodiment according to the present invention.

【図7】本発明に係る第2の実施例のSAW装置の要部
断面図である。
FIG. 7 is a cross-sectional view of essential parts of a SAW device according to a second embodiment of the present invention.

【図8】本発明に係る第3の実施例のSAW装置の要部
断面図である。
FIG. 8 is a cross-sectional view of essential parts of a SAW device according to a third embodiment of the present invention.

【図9】従来のSAW装置の断面図である。FIG. 9 is a cross-sectional view of a conventional SAW device.

【符号の説明】[Explanation of symbols]

10…SAW装置、11…圧電基板、12…(圧電基板
の)表面、13…(圧電基板の)裏面、14…交差指電
極、15…信号電極、16…接地電極、17…信号電極
バンプ、18…接地電極バンプ、20…パッケージ基
板、21…基板本体、22…(パッケージ基板の)表
面、23…(パッケージ基板の)裏面、25a…素子側
信号電極、25b…外部側信号電極、26a…素子側接
地電極、26b…外部側接地電極、27,28…スルー
ホール、30…金属粒子含有接着剤、31…絶縁樹脂、
32…異方性導電材含有接着剤、35…半田材、100
…多数個取りパッケージ基板、101…(多数個取りパ
ッケージ基板の)溝、102…印刷用マスク、103…
(印刷用マスクの)開口。
10 ... SAW device, 11 ... Piezoelectric substrate, 12 ... (Piezoelectric substrate) front surface, 13 ... (Piezoelectric substrate) back surface, 14 ... Interdigital electrode, 15 ... Signal electrode, 16 ... Ground electrode, 17 ... Signal electrode bump, 18 ... Ground electrode bump, 20 ... Package substrate, 21 ... Substrate body, 22 ... (Package substrate) front surface, 23 ... (Package substrate) back surface, 25a ... Element side signal electrode, 25b ... External signal electrode, 26a ... Element side ground electrode, 26b ... External side ground electrode, 27, 28 ... Through hole, 30 ... Metal particle-containing adhesive, 31 ... Insulating resin,
32 ... Anisotropic conductive material-containing adhesive, 35 ... Solder material, 100
... multi-cavity package substrate, 101 ... groove (of multi-cavity package substrate), 102 ... printing mask, 103 ...
Opening (of the printing mask).

───────────────────────────────────────────────────── フロントページの続き (72)発明者 小川 誠一 神奈川県横浜市戸塚区吉田町292番地 株 式会社日立製作所AV機器事業部内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Seiichi Ogawa 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Incorporated company Hitachi Ltd. AV equipment division

Claims (5)

【特許請求の範囲】[Claims] 【請求項1】圧電基板、及び該圧電基板の表面上に形成
された交差指電極、該交差指電極に電力を供給するため
の電極パッドを有する弾性表面波素子(以下、SAW素
子という)と、該SAW素子が搭載され、該SAW素子
の前記電極パッドに電力を供給するための電極パッドが
形成されているパッケージ基板とを備えている弾性表面
波装置において、 前記SAW素子の表面(前記交差指電極及び前記電極パ
ッドが形成されている側の面)と前記パッケージ基板の
表面(前記SAW素子の電極パッドに電力を供給するた
めの前記電極パッドが形成されている側の面)とが対向
し、該SAW素子の表面に形成されている前記交差指電
極と該パッケージ基板の表面との間に一定の間隔の空間
が形成されるよう、両者の電極パッド相互間に導電材が
介在して、両者の電極パッド相互が電気的に接続され、 前記空間が外部空間から遮蔽されるよう、少なくとも前
記SAW素子と前記パッケージ基板との間で前記空間の
周囲が、半田濡れ性が良く且つ半田食われのない金属粒
子を含有する樹脂材(以下、金属粒子含有樹脂材とす
る。)で覆われ、 前記金属粒子含有樹脂材の外側表面が半田材で覆われて
いることを特徴とする弾性表面波装置。
1. A surface acoustic wave device (hereinafter referred to as a SAW device) having a piezoelectric substrate, an interdigital electrode formed on the surface of the piezoelectric substrate, and an electrode pad for supplying electric power to the interdigital electrode. A surface acoustic wave device having the SAW element mounted thereon and a package substrate having an electrode pad for supplying electric power to the electrode pad of the SAW element formed thereon. The surface on which the finger electrodes and the electrode pads are formed) faces the surface of the package substrate (the surface on which the electrode pads for supplying electric power to the electrode pads of the SAW element are formed). However, a conductive material is provided between the electrode pads of the SAW element so that a space with a constant interval is formed between the interdigital electrodes formed on the surface of the SAW element and the surface of the package substrate. In order to electrically connect the two electrode pads to each other through the interposition and to shield the space from the external space, at least the space around the SAW element and the package substrate has good solder wettability. And a resin material containing metal particles without solder erosion (hereinafter referred to as a metal particle-containing resin material), and an outer surface of the metal particle-containing resin material is covered with a solder material. Surface acoustic wave device.
【請求項2】前記空間の周囲を囲むよう、前記SAW素
子と前記パッケージ基板との間で、前記空間の外周で且
つ前記金属粒子含有樹脂材の該空間側に、絶縁性樹脂が
配されていることを特徴とする請求項1記載の弾性表面
波装置。
2. An insulating resin is disposed between the SAW element and the package substrate so as to surround the space, at the outer periphery of the space and on the space side of the metal particle-containing resin material. The surface acoustic wave device according to claim 1, wherein
【請求項3】前記SAW素子の前記電極パッドは、前記
圧電基板の表面上で且つ前記交差指電極の周囲に点在
し、 前記パッケージ基板の前記電極パッドは、前記SAW素
子の前記電極パッドの位置と対応する位置に形成され、 前記SAW素子の前記電極パッドと前記パッケージ基板
の前記電極パッドとは、両者の間に、剛性を有する空間
確保用導電材と異方性導電材を含有する樹脂接着剤又は
樹脂接着シート(以下、異方性導電材含有樹脂材とす
る。)とが介在して、両者の電極パッド相互が電気的に
接続され、 前記異方性導電材含有樹脂材は、前記SAW素子の前記
電極パッドと前記パッケージ基板の前記電極パッドとを
電気的に接続すると共に、前記空間の外周で且つ前記金
属粒子含有樹脂材の該空間側に有し、該空間の周囲を囲
っていることを特徴とする請求項1記載の弾性表面波装
置。
3. The electrode pads of the SAW element are scattered on the surface of the piezoelectric substrate and around the interdigital electrodes, and the electrode pads of the package substrate are the electrode pads of the SAW element. A resin containing a space-providing conductive material and an anisotropic conductive material which are formed between the electrode pad of the SAW element and the electrode pad of the package substrate and which have rigidity between them. An adhesive or a resin adhesive sheet (hereinafter referred to as an anisotropic conductive material-containing resin material) is interposed to electrically connect the two electrode pads to each other. The electrode pad of the SAW element and the electrode pad of the package substrate are electrically connected, and the electrode pad is provided on the outer periphery of the space and on the space side of the metal particle-containing resin material and surrounds the space. hand The surface acoustic wave device as claimed in claim 1, wherein Rukoto.
【請求項4】前記パッケージ基板の基板本体は、リチウ
ムアルミノシリケート系セラミックスで形成されている
ことを特徴とする請求項1、2又は3記載の弾性表面波
装置。
4. The surface acoustic wave device according to claim 1, wherein the substrate body of the package substrate is formed of lithium aluminosilicate ceramics.
【請求項5】圧電基板、及び該圧電基板の表面上に形成
された交差指電極、該交差指電極に電力を供給するため
の電極パッドを有する弾性表面波素子(以下、SAW素
子という)と、該SAW素子が搭載され、該SAW素子
の前記電極パッドに電力を供給するための電極パッドが
形成されているパッケージ基板とを備えている弾性表面
波装置の製造方法において、 複数の前記パッケージ基板が平面的に一体形成された多
数個取りパッケージ基板を形成すると共に、複数の前記
SAW素子を形成し、 前記多数個取りパッケージ基板の表面全体を覆うことが
可能で、前記SAW素子の裏面(前記交差指電極及び前
記電極パッドが形成されている側の面が表面で、この面
に対して反対側の面が裏面)の形状に対応し且つ該SA
W素子の裏面の大きさよりも僅かに大きい複数の開口が
該多数個取りパッケージ基板のSAW素子搭載位置に対
応する位置に形成されているマスクを予め準備し、 複数の前記SAW素子の表面と複数の前記パッケージ基
板の表面(前記SAW素子の電極パッドに電力を供給す
るための前記電極パッドが形成されている側の面)とを
それぞれ対向させ、該SAW素子の表面に形成されてい
る前記交差指電極と該パッケージ基板の表面と間に一定
の間隔の空間が形成されるよう、両者の電極パッド相互
間に導電材を介在させて、両者の電極パッド相互を電気
的に接続し、 前記多数個取りパッケージ基板に搭載された複数の前記
SAW素子が前記マスクの複数の開口に内に収まるよ
う、該マスクを該多数個取りパッケージ基板上に配し、 前記マスクの上方から複数の前記SAW素子の裏面上
に、半田濡れ性が良く且つ半田食われのない金属粒子を
含有する熱硬化性樹脂材(以下、金属粒子含有樹脂材と
する。)を供給し、前記SAW素子の裏面及び該SAW
素子と前記パッケージ基板との間で前記空間の周囲を該
金属粒子含有樹脂材で覆って、複数の前記SAW素子毎
の前記空間を外部空間から遮蔽し、 前記マスクを前記多数個取りパッケージ基板から除去し
た後、前記金属粒子含有樹脂材を加熱して、該金属粒子
含有樹脂材を硬化させ、 複数の前記SAW素子が搭載され且つ各SAW素子毎の
前記空間が前記金属粒子含有樹脂材で覆われた前記多数
個取りパッケージ基板を、該SAW素子が搭載されてい
る方から、溶融半田槽に浸漬して、該金属粒子含有樹脂
材の外側表面を半田材で覆い、 前記多数個取パッケージ基板を各パッケージ基板毎に分
離して、複数の前記弾性表面波装置を製造することを特
徴とする弾性表面波装置の製造方法。
5. A surface acoustic wave element (hereinafter referred to as a SAW element) having a piezoelectric substrate, an interdigital electrode formed on the surface of the piezoelectric substrate, and an electrode pad for supplying electric power to the interdigital electrode. And a package substrate on which the SAW element is mounted and an electrode pad for supplying electric power to the electrode pad of the SAW element is formed, wherein a plurality of the package substrates are provided. It is possible to form a multi-cavity package substrate integrally formed on a plane and to form a plurality of the SAW elements so as to cover the entire front surface of the multi-cavity package substrate. The surface on the side where the interdigital electrodes and the electrode pads are formed is the front surface, and the surface opposite to this surface corresponds to the shape of the back surface)
A mask in which a plurality of openings slightly larger than the size of the back surface of the W element is formed at a position corresponding to the SAW element mounting position of the multi-cavity package substrate is prepared in advance, and And the crossing formed on the surface of the SAW element by facing the surface of the package substrate (the surface on the side where the electrode pad for supplying electric power to the electrode pad of the SAW element is formed). A conductive material is interposed between the two electrode pads to electrically connect the two electrode pads to each other so that a space with a constant interval is formed between the finger electrodes and the surface of the package substrate. The mask is arranged on the multi-cavity package substrate so that the plurality of SAW elements mounted on the multi-cavity package substrate fit within the plurality of openings of the mask. A thermosetting resin material (hereinafter referred to as a metal particle-containing resin material) containing metal particles having good solder wettability and free from solder erosion is supplied onto the back surfaces of the plurality of SAW elements from above. The back surface of the SAW element and the SAW
The periphery of the space between the element and the package substrate is covered with the metal particle-containing resin material to shield the space for each of the plurality of SAW elements from the external space, and the mask is formed from the multi-cavity package substrate. After the removal, the metal particle-containing resin material is heated to cure the metal particle-containing resin material, the plurality of SAW elements are mounted, and the space for each SAW element is covered with the metal particle-containing resin material. The multi-cavity package board is immersed in a molten solder bath from the side on which the SAW element is mounted, and the outer surface of the metal particle-containing resin material is covered with a solder material. A method for manufacturing a surface acoustic wave device, characterized in that a plurality of the surface acoustic wave devices are manufactured by separating each of the package substrates.
JP25333893A 1993-10-08 1993-10-08 Surface acoustic wave device and its production Pending JPH07111438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25333893A JPH07111438A (en) 1993-10-08 1993-10-08 Surface acoustic wave device and its production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25333893A JPH07111438A (en) 1993-10-08 1993-10-08 Surface acoustic wave device and its production

Publications (1)

Publication Number Publication Date
JPH07111438A true JPH07111438A (en) 1995-04-25

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ID=17249934

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