JP2005217027A - Package for storing optical semiconductor element and optical semiconductor device - Google Patents

Package for storing optical semiconductor element and optical semiconductor device Download PDF

Info

Publication number
JP2005217027A
JP2005217027A JP2004019873A JP2004019873A JP2005217027A JP 2005217027 A JP2005217027 A JP 2005217027A JP 2004019873 A JP2004019873 A JP 2004019873A JP 2004019873 A JP2004019873 A JP 2004019873A JP 2005217027 A JP2005217027 A JP 2005217027A
Authority
JP
Japan
Prior art keywords
optical semiconductor
semiconductor element
pedestal
recess
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004019873A
Other languages
Japanese (ja)
Inventor
Masami Yoshikawa
雅実 吉川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP2004019873A priority Critical patent/JP2005217027A/en
Publication of JP2005217027A publication Critical patent/JP2005217027A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To manufacture an optical semiconductor device in which warp of an optical semiconductor element due to influence of warp of an insulating substrate is effectively prevented, in which a light reception characteristic of the optical semiconductor element is maintained, and which stably operates. <P>SOLUTION: The package for storing optical semiconductor element is provided with the insulating substrate 1 where a recessed part for storing and loading the optical semiconductor element 4 in a rectangular shape is formed on an upper face and a loading part in the rectangular shape is formed at a base of the recessed part, lead terminals 2 installed to penetrate the insulating substrate 1 and to be derived outside from inside the recessed part, and seats 7 which are fitted to both ends of a short side of the loading part and in which both ends of the short side of the optical semiconductor element 4 are bonded to upper faces. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、ラインセンサー,フォトダイオード(PD),イメージセンサー等の固体撮像素子またはこれらの画像撮像部を有する光半導体素子を収納するための光半導体素子収納用パッケージおよび光半導体装置に関する。   The present invention relates to a package for storing an optical semiconductor element and an optical semiconductor device for storing a solid-state imaging device such as a line sensor, a photodiode (PD), and an image sensor, or an optical semiconductor element having these image capturing units.

従来のラインセンサー,PD,イメージセンサー等の固体撮像素子またはこれらの画像撮像部を有する光半導体素子を具備した光半導体装置は、絶縁基体の上面に光半導体素子収納用の凹部を設けて成る光半導体素子収納用パッケージの凹部内に光半導体素子を収容して搭載し、凹部を蓋体で塞いで光半導体素子を気密封止することにより基本的に構成される。   A conventional optical semiconductor device including a solid-state imaging device such as a line sensor, a PD, an image sensor, or an optical semiconductor device having these image imaging units has a light formed by providing a concave portion for accommodating the optical semiconductor device on the upper surface of an insulating substrate. An optical semiconductor element is accommodated and mounted in a recess of a semiconductor element storage package, and the optical semiconductor element is hermetically sealed by closing the recess with a lid.

この絶縁基体は、通常、光半導体素子の形状に応じた四角形状等のセラミックスから成るが、樹脂等の有機系材料から構成されてもよい。例えば、光半導体素子がラインセンサーの場合であれば、細長い長方形状のラインセンサーを搭載するのに適した長方形状である。   This insulating base is usually made of a ceramic such as a quadrangle according to the shape of the optical semiconductor element, but may be made of an organic material such as a resin. For example, if the optical semiconductor element is a line sensor, it has a rectangular shape suitable for mounting an elongated rectangular line sensor.

また、蓋体は、透明なガラス板等の透光性の部材により形成されたものであり、絶縁基体に搭載された光半導体素子を覆うようにして絶縁基体に取着される。   The lid is formed of a translucent member such as a transparent glass plate and is attached to the insulating base so as to cover the optical semiconductor element mounted on the insulating base.

光半導体素子は、絶縁基体の上面に形成された凹部の底面の中央部に載置固定されており、光半導体素子の上面の中央部には受光部が、外周部には電極が設けられている。   The optical semiconductor element is mounted and fixed at the central portion of the bottom surface of the recess formed on the upper surface of the insulating base, and the light receiving portion is provided at the central portion of the upper surface of the optical semiconductor element, and the electrode is provided at the outer peripheral portion. Yes.

また、絶縁基体の凹部の内側から外側にかけて導出するようにリード端子が設けられており、このリード端子のうち凹部の内側に露出した部位に光半導体素子の電極が、Au,Al等からなるボンディングワイヤにより電気的に接続される。   In addition, a lead terminal is provided so as to be led out from the inside to the outside of the concave portion of the insulating base, and the electrode of the optical semiconductor element is bonded to the portion exposed to the inside of the concave portion of the lead terminal, such as Au, Al, etc. It is electrically connected by a wire.

なお、絶縁基体の上面の凹部は、平板状の基板の外周部に、光半導体素子が搭載される領域を取り囲むようにして遮光性の枠体を接合することにより形成される。また、基板と枠体とは一体成形されていてもよい。   The concave portion on the upper surface of the insulating base is formed by joining a light-shielding frame to the outer periphery of the flat substrate so as to surround the region where the optical semiconductor element is mounted. Moreover, the board | substrate and the frame may be integrally molded.

このように光半導体素子が気密封止されて成る光半導体装置は、各種の光学機器に部品として実装されて使用される。   An optical semiconductor device in which an optical semiconductor element is hermetically sealed in this manner is mounted and used as a component in various optical devices.

例えば、光半導体素子がラインセンサーの場合であれば、スキャナーやマルチファンクションプリンター,バーコードリーダー等の機器を構成する回路基板に実装される。なお、このときの光半導体装置の回路基板等に対する位置合わせは、光半導体装置の外縁部を回路基板の所定位置に合わせることにより行われる。
特開平5−190879号公報
For example, if the optical semiconductor element is a line sensor, it is mounted on a circuit board constituting a device such as a scanner, a multifunction printer, or a barcode reader. Note that the alignment of the optical semiconductor device with respect to the circuit board or the like at this time is performed by aligning the outer edge portion of the optical semiconductor device with a predetermined position of the circuit substrate.
Japanese Patent Laid-Open No. 5-190879

しかしながら、上記従来の光半導体装置においては、絶縁基体を成すセラミックスの焼成時の収縮や有機樹脂の硬化時の収縮等にともない、絶縁基体に上に凸となるような反りが発生してしまい、光半導体素子を絶縁基体に搭載する際に、絶縁基体の形状に追従して光半導体素子が上に凸となるように反ることがある。このような場合、光半導体素子の表面の受光部分に反りが生じることになり、受光画像に歪を発生させ、その結果、光半導体素子が正常に作動しない場合があるという問題があった。   However, in the above-mentioned conventional optical semiconductor device, warping that protrudes upward on the insulating substrate occurs due to shrinkage when firing the ceramic constituting the insulating substrate, shrinkage when curing the organic resin, etc. When the optical semiconductor element is mounted on the insulating substrate, the optical semiconductor element may warp so as to protrude upward following the shape of the insulating substrate. In such a case, the light receiving portion on the surface of the optical semiconductor element is warped, causing distortion in the received light image, and as a result, there is a problem that the optical semiconductor element may not operate normally.

このような問題があることから、例えばラインセンサーを気密封止して成る光半導体装置をスキャナーやマルチファンクションプリンター,バーコードリーダー等に組み込んだ場合、ラインセンサーによる検知に誤作動が生じるといった問題点が発生していた。特に、光半導体素子がラインセンサー等の長方形状のものである場合、長辺方向で絶縁基体の反りが大きくなるため、上記のような受光画像の歪が顕著なものとなる。   Because of these problems, for example, when an optical semiconductor device that is hermetically sealed with a line sensor is incorporated into a scanner, multifunction printer, barcode reader, etc., malfunctions may occur in detection by the line sensor. Had occurred. In particular, when the optical semiconductor element has a rectangular shape such as a line sensor, the warp of the insulating substrate is increased in the long side direction, and thus the distortion of the received light image becomes significant.

従って、本発明は上記従来の問題に鑑みて完成されたものであり、その目的は、高い寸法精度を有するとともに、特に長方形状の光半導体素子を、受光部分の反り等の不具合を生じることなく気密封止することが可能な受光特性等の特性の良好な光半導体素子収納用パッケージおよび光半導体装置を提供することにある。   Accordingly, the present invention has been completed in view of the above-described conventional problems, and its purpose is to have a high dimensional accuracy, and particularly to prevent an optical semiconductor element having a rectangular shape from causing problems such as warping of a light receiving portion. An object of the present invention is to provide an optical semiconductor element housing package and an optical semiconductor device having good characteristics such as light receiving characteristics that can be hermetically sealed.

本発明の光半導体素子収納用パッケージは、上面に長方形状の光半導体素子を収容し搭載するための凹部が形成されるとともに該凹部の底面に長方形状の搭載部が形成された絶縁基体と、該絶縁基体を貫通して前記凹部の内側から外側に導出されるように設けられたリード端子と、前記搭載部の短辺側の両端部にそれぞれ取着されるとともに上面に前記光半導体素子の短辺側の両端部が接合される台座とを具備していることを特徴とするものである。   The package for housing an optical semiconductor element of the present invention includes an insulating base having a concave portion for accommodating and mounting a rectangular optical semiconductor element on the upper surface and a rectangular mounting portion formed on the bottom surface of the concave portion, Lead terminals provided so as to pass through the insulating base and lead out from the inside to the outside of the recess, and attached to both ends on the short side of the mounting portion, and on the upper surface of the optical semiconductor element And a pedestal to which both ends of the short side are joined.

また、本発明の光半導体素子収納用パッケージは、好ましくは、前記短辺側の両端部にそれぞれ接合された台座の高さの差が0.1mm未満であることを特徴とするものである。   The optical semiconductor element storage package of the present invention is preferably characterized in that the difference in height between the pedestals joined to both ends on the short side is less than 0.1 mm.

また、本発明の光半導体素子収納用パッケージは、好ましくは、前記台座は、前記凹部の内側面から0.5〜1mmの位置に取着されていることを特徴とするものである。   In the optical semiconductor element storage package of the present invention, preferably, the pedestal is attached at a position of 0.5 to 1 mm from the inner surface of the recess.

本発明の光半導体装置は、上記本発明の構成の光半導体素子収納用パッケージと、前記凹部内に収容されるとともに短辺側の両端部の下面が前記台座の上面に接合され、電極が前記リード端子に電気的に接続された長方形状の光半導体素子と、前記絶縁基体の上面に前記凹部を塞ぐようにして取着された透光性蓋体とを具備していることを特徴とするものである。   An optical semiconductor device according to the present invention includes an optical semiconductor element storage package having the above-described configuration according to the present invention, and is accommodated in the recess, and the lower surfaces of both end portions on the short side are bonded to the upper surface of the pedestal. A rectangular optical semiconductor element electrically connected to a lead terminal, and a translucent lid attached so as to close the concave portion on the upper surface of the insulating base. Is.

本発明の光半導体素子収納用パッケージによれば、凹部の底面の搭載部の短辺側の両端部に台座を設け、その台座の上面に光半導体素子の短辺側の両端部が接合されていることから、光半導体素子は凹部の底面に直接には載置されず、その結果絶縁基体の凹部の底面に反りが生じていても、光半導体素子がその凹部の底面の反りに追従して反るようなことはない。したがって、光半導体素子の平行度を保ちつつ絶縁基体に搭載することができ、光半導体素子が長期にわたって安定して作動することが可能な光半導体装置を提供することができる。   According to the optical semiconductor element storage package of the present invention, pedestals are provided at both ends on the short side of the mounting portion on the bottom surface of the recess, and both ends on the short side of the optical semiconductor element are joined to the top surface of the pedestal. Therefore, the optical semiconductor element is not placed directly on the bottom surface of the concave portion, and as a result, even if the bottom surface of the concave portion of the insulating base is warped, the optical semiconductor element follows the warpage of the bottom surface of the concave portion. There is no warping. Therefore, it is possible to provide an optical semiconductor device that can be mounted on an insulating substrate while maintaining the parallelism of the optical semiconductor element, and that the optical semiconductor element can operate stably over a long period of time.

例えば、絶縁基体がセラミックスから成る場合、セラミックスの焼成時に発生した絶縁基体の反りを効果的に吸収し、反りの影響を受けずに光半導体素子を水平に搭載し保持することができる。また、絶縁基体が樹脂等の有機系材料から成る場合も、樹脂の熱履歴による比較的大きな反りの発生に対しても、搭載部の短辺側の両端部にそれぞれ、光半導体素子の短辺側の両端部を接合し保持するための台座を設けることにより、光半導体素子に反りを生じることなく、水平に搭載することができる。その結果、光半導体素子の搭載の位置精度に優れた光半導体素子収納用パッケージを提供することができる。また、光半導体装置を歩留まり良く低コストで製造できる。   For example, when the insulating substrate is made of ceramics, it is possible to effectively absorb the warp of the insulating substrate generated during the firing of the ceramic and to horizontally mount and hold the optical semiconductor element without being affected by the warp. In addition, even when the insulating base is made of an organic material such as a resin, the short side of the optical semiconductor element is provided at each end on the short side of the mounting portion, even when a relatively large warp occurs due to the thermal history of the resin. By providing a pedestal for joining and holding both end portions on the side, the optical semiconductor element can be mounted horizontally without warping. As a result, it is possible to provide a package for housing an optical semiconductor element that is excellent in positional accuracy for mounting the optical semiconductor element. In addition, the optical semiconductor device can be manufactured with high yield and low cost.

また、本発明の光半導体素子収納用パッケージは、好ましくは、短辺側の両端部にそれぞれ接合された台座の高さの差が0.1mm未満であることから、台座自体の収縮による高さバラツキ、変形等を最小限に抑えることができ、凹部底面の反りに伴う光半導体素子の傾きを効果的に防止することができる。   The optical semiconductor element storage package of the present invention preferably has a height difference due to contraction of the pedestal itself because the difference in height between the pedestals joined to both ends on the short side is less than 0.1 mm. Variation, deformation, and the like can be minimized, and the tilt of the optical semiconductor element due to warpage of the bottom surface of the recess can be effectively prevented.

また、本発明の光半導体素子収納用パッケージは、好ましくは、台座は、凹部の内側面から0.5〜1mmの位置に取着されていることから、光半導体素子と絶縁基板との接触を防止するとともに長辺方向の小型化を実現することができる。   In the optical semiconductor element storage package of the present invention, preferably, the pedestal is attached at a position of 0.5 to 1 mm from the inner side surface of the recess, so that the optical semiconductor element and the insulating substrate are brought into contact with each other. It is possible to achieve prevention and downsizing in the long side direction.

また、台座が絶縁基板の凹部底面部の収縮による変形、または熱履歴に伴う変形により、光半導体素子が傾くことを効果的に防止することができ、また光半導体装置の小型化が実現でき、光半導体装置を組み込むスキャナーやマルチファンクションプリンター,バーコードリーダー等の機器を構成する回路基板の小型化が可能となる。   In addition, the pedestal can effectively prevent the optical semiconductor element from being tilted due to the deformation due to the contraction of the bottom surface of the concave portion of the insulating substrate, or the deformation accompanying the thermal history, and the optical semiconductor device can be miniaturized, A circuit board constituting a device such as a scanner, a multi-function printer, or a barcode reader incorporating an optical semiconductor device can be downsized.

本発明の光半導体装置は、上記本発明の構成の光半導体素子収納用パッケージと、凹部内に収容されるとともに短辺側の両端部の下面が台座の上面に接合され、電極がリード端子に電気的に接続された長方形状の光半導体素子と、絶縁基体の上面に凹部を塞ぐようにして取着された透光性蓋体とを具備していることから、長方形状の光半導体素子の受光部分に反り等が発生することを効果的に防止することが可能な受光特性等の特性の良好な光半導体装置を提供することができる。   An optical semiconductor device according to the present invention includes an optical semiconductor element storage package having the above-described configuration according to the present invention, and is accommodated in a recess, and the lower surfaces of both end portions on the short side are joined to the upper surface of the pedestal, and the electrodes serve as lead terminals. Since the rectangular optical semiconductor element electrically connected and the translucent cover attached so as to close the concave portion on the upper surface of the insulating base, the rectangular optical semiconductor element is provided. It is possible to provide an optical semiconductor device with good characteristics such as light receiving characteristics that can effectively prevent warpage or the like from occurring in the light receiving portion.

本発明の光半導体装置について以下に詳細に説明する。図1は本発明の光半導体素子収納用パッケージを用いた光半導体装置の実施の形態の一例を示す断面図である。図1において、1は絶縁基体、2はリード端子、3は透光性蓋体、4は光半導体素子、7は台座である。これらの絶縁基体1、リード端子2、蓋体3、光半導体素子4および台座7により主に光半導体装置8が基本的に構成される。   The optical semiconductor device of the present invention will be described in detail below. FIG. 1 is a sectional view showing an example of an embodiment of an optical semiconductor device using an optical semiconductor element housing package of the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a lead terminal, 3 is a translucent lid, 4 is an optical semiconductor element, and 7 is a pedestal. The insulating semiconductor 1, the lead terminal 2, the lid 3, the optical semiconductor element 4 and the base 7 mainly constitute an optical semiconductor device 8.

なお、1aは光半導体素子4を台座7に接合するための樹脂接合材、1bは絶縁基体1と蓋体3を接合する樹脂接合材である。   In addition, 1a is a resin bonding material for bonding the optical semiconductor element 4 to the base 7, and 1b is a resin bonding material for bonding the insulating substrate 1 and the lid 3 together.

本発明の絶縁基体1は、アルミナ質焼結体やガラスセラミック焼結体等の絶縁材料から成り、例えば、アルミナ質焼結体から成る場合であれば、アルミナ等の原料粉末を有機溶剤,樹脂のバインダーとともにシート状に成形して複数のグリーンシートを作製し、これらのグリーンシートに適当な打ち抜き加工を施して所定の形状に形成し、高温で焼成することにより製作される。   The insulating substrate 1 of the present invention is made of an insulating material such as an alumina sintered body or a glass ceramic sintered body. For example, if the insulating base 1 is made of an alumina sintered body, the raw material powder such as alumina is used as an organic solvent or resin. A plurality of green sheets are produced by forming into a sheet shape together with the binder, and the green sheets are appropriately punched to form a predetermined shape, and are fired at a high temperature.

また絶縁基体1は、エポキシ樹脂、ガラスエポキシ樹脂、ポリイミド等の樹脂材料によって形成されていてもよい。   The insulating substrate 1 may be formed of a resin material such as an epoxy resin, a glass epoxy resin, or polyimide.

絶縁基体1の上面には、光半導体素子4を収容し搭載するための凹部が設けられている。このような凹部を有する絶縁基体1は、例えば、アルミナ質焼結体から成る場合であれば、セラミックグリーンシート(以下、グリーンシートともいう)の一部を枠状に打ち抜いておき、板状のグリーンシートの上に枠状のグリーンシートを積層し一体焼成することにより形成される。また、別個に製作した板状のセラミックスの上面に枠状のセラミックスを結晶性ガラス等を用いて接合することにより形成してもよい。   On the upper surface of the insulating substrate 1, a recess for receiving and mounting the optical semiconductor element 4 is provided. If the insulating substrate 1 having such a recess is made of, for example, an alumina sintered body, a part of a ceramic green sheet (hereinafter also referred to as a green sheet) is punched into a frame shape, It is formed by laminating a frame-like green sheet on a green sheet and firing it integrally. Alternatively, it may be formed by bonding a frame-shaped ceramic to the upper surface of a separately manufactured plate-shaped ceramic using crystalline glass or the like.

また、絶縁基体1がエポキシ樹脂からなる場合であれば、未硬化のエポキシ樹脂を所定の絶縁基体1の形状に成形できるような金型を用いて、トランスファーモールド法やインジェクションモールド法等により成形することにより形成される。この場合、平板状の基板部と四角枠状の枠部とを別々に成形しておいて、その後、基板部の上面の外周部に枠部を接合することにより凹部を形成するようにしてもよく、凹部が形成されるような金型を用いて一体的に成形してもよい。   If the insulating substrate 1 is made of an epoxy resin, it is molded by a transfer molding method, an injection molding method, or the like using a mold that can mold an uncured epoxy resin into the shape of the predetermined insulating substrate 1. Is formed. In this case, the flat plate portion and the square frame portion may be separately formed, and then the concave portion may be formed by joining the frame portion to the outer peripheral portion of the upper surface of the substrate portion. Alternatively, it may be integrally formed using a mold in which a recess is formed.

本発明において、絶縁基体1の凹部の底面に長方形状の搭載部が形成されているとともに、搭載部の短辺側の両端部にそれぞれ台座7が取着されている。台座7は、光半導体素子4を支持し接合固定する機能をなし、その上面に光半導体素子4の短辺側の両端部が接合される。   In the present invention, a rectangular mounting portion is formed on the bottom surface of the concave portion of the insulating base 1, and pedestals 7 are attached to both end portions on the short side of the mounting portion. The pedestal 7 has a function of supporting and fixing the optical semiconductor element 4, and both ends on the short side of the optical semiconductor element 4 are bonded to the upper surface thereof.

光半導体素子4搭載用の台座7は、セラミック製のもの、樹脂製のもの、または金属を成形してものでよい。台座7は、セラミックスから成る絶縁基体1との一体成形、または樹脂から成る絶縁基体1との一体成形、またはセラミックスから成る四角柱状の台座7や樹脂から成る四角柱状の台座7を所定位置に樹脂接合材等を用いて接合してもよい。   The base 7 for mounting the optical semiconductor element 4 may be made of ceramic, resin, or metal. The pedestal 7 is formed by integrally molding with an insulating base 1 made of ceramics, integrally molding with an insulating base 1 made of resin, or a square columnar pedestal 7 made of ceramics or a square columnar pedestal 7 made of resin at a predetermined position. You may join using a joining material etc.

本発明の光半導体装置8によれば、搭載部に光半導体素子4の短辺側の両端部のみを保持させる台座7を設け、その台座7の上に光半導体素子4を搭載し接合固定するようにしたことから、絶縁基体1がセラミック製の場合に生じる、セラミックスの焼成時の熱収縮による反り、また絶縁基体1が樹脂製の場合に生じる、樹脂の吸湿や熱履歴による樹脂の経時変化による比較的大きな反りが発生しても、光半導体素子4を水平度の精度を良好として搭載することができる。   According to the optical semiconductor device 8 of the present invention, the mounting portion is provided with the pedestal 7 that holds only both ends on the short side of the optical semiconductor element 4, and the optical semiconductor element 4 is mounted on the pedestal 7 and bonded and fixed. As a result, warpage caused by thermal shrinkage during firing of ceramics, which occurs when the insulating substrate 1 is made of ceramic, and time-dependent change of the resin due to moisture absorption and thermal history of the resin, which occurs when the insulating substrate 1 is made of resin. Even if a relatively large warp occurs due to the above, it is possible to mount the optical semiconductor element 4 with good leveling accuracy.

その結果、光半導体素子4の受光部分における受光画像に歪が発生することは効果的に防止され、光半導体素子4の搭載精度の優れた光半導体素子収納用パッケージを提供することができる。また、光半導体装置8を歩留まり良く低コストで製造できる。   As a result, it is possible to effectively prevent distortion in the received light image in the light receiving portion of the optical semiconductor element 4 and provide an optical semiconductor element housing package with excellent mounting accuracy of the optical semiconductor element 4. In addition, the optical semiconductor device 8 can be manufactured with good yield and low cost.

また本発明では、絶縁基体1の凹部の内側から外側に導出するようにしてリード端子2が設けられている。リード端子2は鉄−ニッケル−コバルト合金や鉄−ニッケル合金等の鉄系合金や、銅または銅系の合金等からなる。このリード端子2は、例えば、鉄−ニッケル−コバルト合金から成る場合であれば、鉄−ニッケル−コバルト合金の板材に打抜き加工やエッチング加工等を施し、所定の寸法、形状に加工することにより形成される。   In the present invention, the lead terminal 2 is provided so as to be led out from the inside to the outside of the concave portion of the insulating base 1. The lead terminal 2 is made of an iron-based alloy such as an iron-nickel-cobalt alloy or an iron-nickel alloy, or copper or a copper-based alloy. If the lead terminal 2 is made of, for example, an iron-nickel-cobalt alloy, the lead terminal 2 is formed by punching or etching the iron-nickel-cobalt alloy plate material and processing it into a predetermined size and shape. Is done.

リード端子2を、凹部の内側から外側に導出するようにして設けるには、絶縁基体1がセラミックスから成る場合、例えば、複数のリード端子2の一端部をフレームで連結してなるリードフレームを、板状のセラミック基板と枠状のセラミック基板との間で結晶性ガラス(ホウ珪酸系ガラス)等を用いて接合させる方法を用いることができる。   In order to provide the lead terminal 2 so as to be led out from the inside to the outside of the recess, when the insulating base 1 is made of ceramics, for example, a lead frame formed by connecting one end of a plurality of lead terminals 2 with a frame, A method of bonding between a plate-shaped ceramic substrate and a frame-shaped ceramic substrate using crystalline glass (borosilicate glass) or the like can be used.

また絶縁基体1が樹脂から成る場合、例えば、複数のリード端子2の一端部をフレームで連結してなるリードフレームを、フレームが凹部の外側(絶縁基体1の側面よりも外側)に出るとともに、リード端子2のフレームで連結していない側の各端部が凹部内に露出するようにして、絶縁基体1を成形する金型内にセットしておき、絶縁基体1となる未硬化の樹脂をリードフレームと一体的に加熱硬化させること等の方法を用いることができる。これらの場合、リード端子2を絶縁基体1に設けた後、フレームは切断除去する。   Further, when the insulating base 1 is made of resin, for example, a lead frame formed by connecting one end portions of a plurality of lead terminals 2 with a frame is exposed to the outside of the recess (outside the side surface of the insulating base 1), and The ends of the lead terminals 2 that are not connected by the frame are exposed in the recesses, and the insulating base 1 is set in a mold for molding, and an uncured resin that becomes the insulating base 1 is placed. A method such as heat-curing integrally with the lead frame can be used. In these cases, after the lead terminal 2 is provided on the insulating base 1, the frame is cut and removed.

そして、これらの絶縁基体1、リード端子2および台座7により主に本発明の光半導体素子収納用パッケージが構成されており、凹部内に光半導体素子4を収納するとともに、光半導体素子4の短辺側の両端部を、台座7の上に位置決めして載せるとともにエポキシ樹脂等の樹脂から成る樹脂接合材1aを介して接合固定し、光半導体素子4の電極をリード端子2のうち凹部内に露出している部分にボンディングワイヤ等の電気的接続材(図示せず)を介して電気的に接続し、その後、凹部を塞ぐようにして絶縁基体1の上面に透光性の蓋体3を樹脂接合材1bを介して接合し取着することにより、光半導体装置8が作製される。   The insulating base 1, the lead terminal 2 and the pedestal 7 mainly constitute an optical semiconductor element storage package according to the present invention. The optical semiconductor element 4 is accommodated in the recess, and the optical semiconductor element 4 is short. Both end portions on the side are positioned and placed on the pedestal 7 and bonded and fixed via a resin bonding material 1a made of a resin such as epoxy resin, and the electrode of the optical semiconductor element 4 is placed in the recess of the lead terminal 2 The exposed portion is electrically connected via an electrical connection material (not shown) such as a bonding wire, and then a translucent lid 3 is provided on the upper surface of the insulating base 1 so as to close the recess. The optical semiconductor device 8 is manufactured by bonding and attaching via the resin bonding material 1b.

本発明の光半導体素子収納用パッケージおよび光半導体装置8において、台座7は、光半導体素子4を強固に保持し接合する上では、その体積が大きいほど好ましいものとなるが、大きくしすぎると、絶縁基体1の反りの影響を受けやすくなり、光半導体素子4に反りを生じることになる。したがって、台座7の大きさは、光半導体素子4の短辺側の幅をAとすると、台座7の幅をA+0.6mm〜A+1.5mmの範囲とすることが好ましい。また、光半導体素子4の長辺側の受光部を除く電極および配線部の長辺方向の長さをBとすると、台座7の長辺方向の長さをB+0.6mm〜B+1.5mmの範囲とすることが好ましい。これは、光半導体素子4の受光特性に影響を及ぼさないようにするために光半導体素子4の受光部直下には台座7は置けないため、電極および配線部の直下に台座7を設けることから、電極および配線部の長辺方向の長さが台座7の長さを左右することとなることによる。   In the optical semiconductor element storage package and the optical semiconductor device 8 of the present invention, the pedestal 7 is more preferable as its volume is larger in order to firmly hold and join the optical semiconductor element 4, but if it is too large, It becomes easy to be influenced by the warp of the insulating substrate 1, and the optical semiconductor element 4 is warped. Therefore, the size of the base 7 is preferably set such that the width of the base 7 is in the range of A + 0.6 mm to A + 1.5 mm, where A is the width on the short side of the optical semiconductor element 4. Further, assuming that the length in the long side direction of the electrode and the wiring part excluding the light receiving part on the long side of the optical semiconductor element 4 is B, the length in the long side direction of the base 7 is in the range of B + 0.6 mm to B + 1.5 mm. It is preferable that This is because the pedestal 7 cannot be placed directly under the light receiving portion of the optical semiconductor element 4 so as not to affect the light receiving characteristics of the optical semiconductor element 4, and therefore the pedestal 7 is provided directly under the electrode and wiring portion. This is because the length of the electrode and the wiring portion in the long side direction determines the length of the base 7.

なお、台座7を絶縁基体1の凹部の底面に接合する方法としては、例えば、接着剤による接着等の方法を用いることができる。また、セラミックス、樹脂等から成る絶縁基体1を成形する際に、絶縁基体1となる板状体と台座7とを一括成形する等の方法を用いることができる。   In addition, as a method of joining the base 7 to the bottom surface of the concave portion of the insulating base 1, for example, a method such as adhesion with an adhesive can be used. Further, when the insulating base 1 made of ceramics, resin, or the like is formed, a method such as forming the plate-like body that becomes the insulating base 1 and the base 7 together can be used.

本発明において、台座7は、円柱状、角柱状等の柱状の形状、または立方体、直方体等の種々の形状とすることができるが、成形性を良好にするためには、立方体、直方体等の形状がよい。   In the present invention, the pedestal 7 can have a columnar shape such as a columnar shape, a prismatic shape, or various shapes such as a cube and a rectangular parallelepiped. Good shape.

また、本発明の光半導体素子収納用パッケージおよび光半導体装置8において、短辺側の両端部にそれぞれ接合された台座7の高さの差は0.1mm未満であることが好ましい。短辺側の両端部にそれぞれ接合された台座7の高さの差を0.1mm未満としておくと、台座7自体の収縮による高さバラツキ、変形等を最小限に抑えることができ、凹部の底面の反りに伴う光半導体素子4の傾きを効果的に防止することができる。   In the optical semiconductor element housing package and the optical semiconductor device 8 of the present invention, it is preferable that the difference in height between the pedestals 7 bonded to both ends on the short side is less than 0.1 mm. If the difference in height between the pedestals 7 joined to both ends on the short side is set to be less than 0.1 mm, height variation due to contraction of the pedestal 7 itself, deformation, etc. can be minimized, Inclination of the optical semiconductor element 4 due to warping of the bottom surface can be effectively prevented.

短辺側の両端部の台座7の高さの差を0.1mm未満とするには、例えば、台座7を搭載部に樹脂接合材を介して接合するときに、樹脂接合材が硬化する前に、台座7を上方より加圧治具で加圧し、台座7の高さを調節すること等の方法を用いることができる。   In order to make the difference in height of the pedestal 7 at both ends on the short side less than 0.1 mm, for example, when the pedestal 7 is joined to the mounting portion via the resin joining material, before the resin joining material is cured. In addition, a method such as pressing the pedestal 7 from above with a pressure jig and adjusting the height of the pedestal 7 can be used.

また、本発明の光半導体素子収納用パッケージおよび光半導体装置8において、台座7は、凹部の内側面から0.5〜1mmの位置に取着されていることが好ましい。この場合、光半導体素子4と絶縁基板1との接触を防止するとともに長辺方向の小型化を実現することができる。また、台座7が絶縁基板1の凹部の底面部の収縮による変形、または熱履歴に伴う変形により、光半導体素子4が傾くことを効果的に防止することができ、また光半導体装置8の小型化が実現でき、光半導体装置を組み込むスキャナーやマルチファンクションプリンター,バーコードリーダー等の機器を構成する回路基板の小型化が可能となる。   In the optical semiconductor element housing package and the optical semiconductor device 8 of the present invention, the pedestal 7 is preferably attached at a position of 0.5 to 1 mm from the inner surface of the recess. In this case, contact between the optical semiconductor element 4 and the insulating substrate 1 can be prevented, and downsizing in the long side direction can be realized. In addition, the optical semiconductor element 4 can be effectively prevented from being inclined due to the deformation of the base 7 due to the contraction of the bottom surface of the concave portion of the insulating substrate 1 or the deformation due to the thermal history, and the optical semiconductor device 8 can be reduced in size. Circuit boards constituting devices such as scanners, multifunction printers, and barcode readers incorporating optical semiconductor devices can be miniaturized.

なお、台座7が凹部の内側面から0.5〜1mmの位置にあるとは、台座7と凹部の内側面との間の間隔(最短距離)が0.5〜1mmであるということである。   In addition, the pedestal 7 being at a position of 0.5 to 1 mm from the inner surface of the recess means that the interval (shortest distance) between the pedestal 7 and the inner surface of the recess is 0.5 to 1 mm. .

また、台座7は、絶縁基体1の反りの影響を光半導体素子4に伝えにくくする点で、樹脂等の弾性を有する材料からなるのがよい。さらに、台座7の上面の長辺方向の外側が低くなるように段差を設け、その段差において樹脂接合材の体積を大きくすることにより、絶縁基体1が上に凸に反った際に台座7の上面の長辺方向の外側の接合が劣化するのを防ぐことができる。   The pedestal 7 is preferably made of a material having elasticity, such as a resin, in order to make it difficult to transmit the influence of the warp of the insulating base 1 to the optical semiconductor element 4. Further, a step is provided so that the outside of the upper surface of the pedestal 7 in the long side direction is lowered, and the volume of the resin bonding material is increased at the step, so that when the insulating base 1 is warped upward, the pedestal 7 It is possible to prevent the outer side joining in the long side direction from deteriorating.

蓋体3は、高い光透過率、製造のし易さ、化学的安定性、強度等の点で、ソーダガラス等のガラス,プラスチック,サファイア(アルミナの単結晶),石英等から成るのが好ましい。   The lid 3 is preferably made of glass such as soda glass, plastic, sapphire (alumina single crystal), quartz, or the like in terms of high light transmittance, ease of manufacture, chemical stability, strength, and the like. .

光半導体素子4は、PD,ラインセンサー,イメージセンサー,CCD(Charge Coupled Device),EPROM(Erasable Programmable ROM)等の固体撮像素子、またはこれらの撮像部を有する光半導体素子4から成るものである。   The optical semiconductor element 4 includes a solid-state imaging element such as a PD, a line sensor, an image sensor, a CCD (Charge Coupled Device), an EPROM (Erasable Programmable ROM), or an optical semiconductor element 4 having these imaging units.

また、絶縁基体1と光半導体素子4とを接合する樹脂接合材1aが紫外線硬化性樹脂から成る場合、熱硬化性樹脂を使用する場合にくらべ、接着のための加熱工程が省かれるため、絶縁基体1と光半導体素子4との熱膨張係数の差に起因する反りが絶縁基体1に発生せず、受光画像に歪みなどが発生しないため、より一層高い信頼性を有する光半導体装置8を作製することができ、好ましい。   Further, when the resin bonding material 1a for bonding the insulating substrate 1 and the optical semiconductor element 4 is made of an ultraviolet curable resin, a heating process for bonding is omitted as compared with the case of using a thermosetting resin. Since the warp due to the difference in thermal expansion coefficient between the base 1 and the optical semiconductor element 4 does not occur in the insulating base 1 and no distortion occurs in the received light image, the optical semiconductor device 8 having higher reliability is manufactured. Can be preferred.

また、絶縁基体1と蓋体3とを接合する樹脂接合材1bは、常温で硬化させることが可能で、光半導体素子4に与える影響が小さいことから、紫外線硬化性樹脂からなることが好ましい。この場合、光半導体素子4を搭載部に搭載してから蓋体3を取り付けて封止するまで、オーブン等の中に長時間放置する必要がなくなる。その結果、光半導装置8の内部にダスト、異物等の混入がなくなり、製造歩留まりを飛躍的に向上させ得る。   The resin bonding material 1b for bonding the insulating substrate 1 and the lid 3 is preferably made of an ultraviolet curable resin because it can be cured at room temperature and has little influence on the optical semiconductor element 4. In this case, it is not necessary to leave in the oven or the like for a long time until the optical semiconductor element 4 is mounted on the mounting portion and the lid 3 is attached and sealed. As a result, dust, foreign matter, and the like are not mixed in the optical semiconductor device 8, and the manufacturing yield can be dramatically improved.

またエポキシ樹脂等の紫外線硬化性樹脂1bは、余計な外光の入射を遮断するために、黒色,茶褐色,暗緑色,濃青色等の暗色系の顔料や染料を混入させてもよい。   In addition, the ultraviolet curable resin 1b such as an epoxy resin may be mixed with a dark pigment or dye such as black, brown, dark green, or dark blue in order to block extraneous light from entering.

なお、本発明は上記実施の形態に限定されず、本発明の要旨を逸脱しない範囲内で種々の変更を行なうことは何等差し支えない。   Note that the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the scope of the present invention.

酸化アルミニウム質焼結体から成る絶縁基体の上面に凹部を設けるとともに凹部の底面に光半導体素子の搭載部を形成し、表1に示したような位置にエポキシ樹脂から成る台座を樹脂接合材で取着して光半導体素子収納用パッケージを作製した。   A concave portion is provided on the upper surface of the insulating base made of an aluminum oxide sintered body, and a mounting portion for the optical semiconductor element is formed on the bottom surface of the concave portion. A base made of epoxy resin is formed with a resin bonding material at the position shown in Table 1. The optical semiconductor element storage package was prepared by attaching.

光半導体素子の搭載部は、絶縁基体の凹部の底面の中央部で光半導体素子が搭載される領域を示すものであり、長さが51.5mm、長短辺の長さが1.75mmの長方形状である。   The mounting portion of the optical semiconductor element indicates a region where the optical semiconductor element is mounted at the central portion of the bottom surface of the recess of the insulating base, and is a rectangle having a length of 51.5 mm and a length of the long and short sides of 1.75 mm. Is.

なお、台座の高さは顕微鏡による焦点深度測定により測定しており、台座の高さの差が0mmとは、その測定法では検知されない程度の高さの差であることを意味する。   The height of the pedestal is measured by measuring the depth of focus with a microscope, and a difference in height of the pedestal of 0 mm means a height difference that is not detected by the measurement method.

凹部は、直方体状であって平面視形状が短辺の長さが4mm、長辺の長さが51.5mmの長方形状であり、その各長辺側の内側から外側に導出されるようにして、各辺11本ずつ、鉄−ニッケル−コバルト合金から成るリード端子を導出させた。   The concave portion has a rectangular parallelepiped shape and has a rectangular shape with a short side length of 4 mm and a long side length of 51.5 mm in plan view, and is led out from the inner side to the outer side of each long side. Thus, 11 lead terminals made of iron-nickel-cobalt alloy were led out for each side.

この台座の上に、長方形状のラインセンサー(0.8mm×48mm)の短辺側の両端部をエポキシ樹脂で接合し、ガラス製の蓋体で凹部を塞いで光半導体装置を作製した後、光半導体素子が正常に受光できるか否かの試験を行った。   On this pedestal, both ends on the short side of the rectangular line sensor (0.8 mm × 48 mm) are joined with epoxy resin, and the concave portion is closed with a glass lid to produce an optical semiconductor device. A test was conducted to determine whether the optical semiconductor element can receive light normally.

受光状態の確認は、光半導体素子に所定の光を当て、電気テスターを用いて入力光量に対する出力電圧を測定し、光電変換特性を得る方法により行った。その結果を表1に示す。

Figure 2005217027
The light receiving state was confirmed by applying a predetermined light to the optical semiconductor element, measuring the output voltage with respect to the input light amount using an electric tester, and obtaining photoelectric conversion characteristics. The results are shown in Table 1.
Figure 2005217027

表1の結果からわかるように、台座の高さの差が0.1mm以上になると、台座自体の収縮による高さバラツキ、変形等による寸法公差が大きくなり、凹部の底面の反りに伴う光半導体素子の傾きを防止することができなくなった。またこの場合、長期使用する間に台座の変形が大きくなるので、光半導体素子の受光面を長期にわたって確実に水平に保つことが難しい。また、台座の高さが高いので、光半導体素子収納用パッケージの低背化が困難である。   As can be seen from the results in Table 1, when the difference in height of the pedestal is 0.1 mm or more, the height tolerance due to the shrinkage of the pedestal itself, the dimensional tolerance due to deformation, etc. increases, and the optical semiconductor accompanying warping of the bottom surface of the recess The tilt of the element could not be prevented. Further, in this case, since the deformation of the pedestal increases during long-term use, it is difficult to reliably keep the light receiving surface of the optical semiconductor element horizontal for a long time. Further, since the height of the pedestal is high, it is difficult to reduce the height of the optical semiconductor element storage package.

また、台座が凹部の内側面から0.5mm未満の位置にある場合、台座に光半導体素子を搭載する際、搭載精度等の影響により光半導体素子が凹部の内面の絶縁基板部分との接触が起こり、光半導体素子に欠けや傷が生じ、高価な光半導体素子を不良にしてしまう問題が発生した。台座の位置が凹部の内側面から1mmを超えると、台座が絶縁基板の変形にともなって傾きやすくなり、受光状態が劣化する傾向が生じた。   In addition, when the pedestal is located at a position less than 0.5 mm from the inner surface of the recess, when the optical semiconductor element is mounted on the pedestal, the optical semiconductor element is not in contact with the insulating substrate portion on the inner surface of the recess due to the influence of mounting accuracy or the like. As a result, there was a problem that the optical semiconductor element was chipped or scratched to make the expensive optical semiconductor element defective. When the position of the pedestal exceeds 1 mm from the inner surface of the recess, the pedestal tends to tilt with the deformation of the insulating substrate, and the light receiving state tends to deteriorate.

また、絶縁基体の長辺方向の寸法が大きくなるほど絶縁基体の変形度が大きくなり、絶縁基体の変形にともない台座自体も傾きやすくなり、受光状態が劣化する傾向があり、さらに光半導体装置の小型化に不利であり、光半導体装置を組み込むスキャナーやマルチファンクションプリンター,バーコードリーダー等の機器を構成する回路基板の小型化ができない。   In addition, as the length of the insulating base in the long side direction increases, the degree of deformation of the insulating base increases, and the base itself tends to tilt with the deformation of the insulating base, and the light receiving state tends to deteriorate. It is disadvantageous to make the circuit board that constitutes devices such as a scanner, a multifunction printer, and a barcode reader incorporating an optical semiconductor device small.

これに対し、台座の高さの差が0.1mm未満であり、台座と凹部の内側面からの距離が0.5〜1mmである本発明の範囲においては、受光状態に歪が生じることはなく、光半導体装置の受光精度は良好であった。   On the other hand, in the range of the present invention in which the difference in height of the pedestal is less than 0.1 mm and the distance from the pedestal to the inner surface of the recess is 0.5 to 1 mm, distortion occurs in the light receiving state. In addition, the light receiving accuracy of the optical semiconductor device was good.

本発明の光半導体装置の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the optical semiconductor device of this invention.

符号の説明Explanation of symbols

1・・・絶縁基体
1a・・・樹脂接合材
1b・・・樹脂接合材
2・・・リード端子
3・・・透光性蓋体
4・・・光半導体素子
7・・・台座
8・・・光半導体装置
DESCRIPTION OF SYMBOLS 1 ... Insulating base | substrate 1a ... Resin bonding material 1b ... Resin bonding material 2 ... Lead terminal 3 ... Translucent cover body 4 ... Optical semiconductor element 7 ... Base 8 ...・ Optical semiconductor devices

Claims (4)

上面に長方形状の光半導体素子を収容し搭載するための凹部が形成されるとともに該凹部の底面に長方形状の搭載部が形成された絶縁基体と、該絶縁基体を貫通して前記凹部の内側から外側に導出されるように設けられたリード端子と、前記搭載部の短辺側の両端部にそれぞれ取着されるとともに上面に前記光半導体素子の短辺側の両端部が接合される台座とを具備していることを特徴とする光半導体素子収納用パッケージ。 A recess for accommodating and mounting a rectangular optical semiconductor element is formed on the top surface, and an insulating substrate having a rectangular mounting portion formed on the bottom surface of the recess, and the inside of the recess through the insulating substrate Lead terminals provided so as to be led out to the outside, and pedestals that are respectively attached to both ends on the short side of the mounting portion and that both ends on the short side of the optical semiconductor element are joined to the upper surface And a package for storing an optical semiconductor element. 前記短辺側の両端部にそれぞれ接合された台座の高さの差が0.1mm未満であることを特徴とする請求項1記載の光半導体素子収納用パッケージ。 2. The optical semiconductor element housing package according to claim 1, wherein a difference in height between the pedestals respectively joined to both ends on the short side is less than 0.1 mm. 前記台座は、前記凹部の内側面から0.5〜1mmの位置に取着されていることを特徴とする請求項1または請求項2記載の光半導体素子収納用パッケージ。 3. The optical semiconductor element storage package according to claim 1, wherein the pedestal is attached at a position of 0.5 to 1 mm from the inner surface of the recess. 請求項1乃至請求項3のいずれかに記載の光半導体素子収納用パッケージと、前記凹部内に収容されるとともに短辺側の両端部の下面が前記台座の上面に接合され、電極が前記リード端子に電気的に接続された長方形状の光半導体素子と、前記絶縁基体の上面に前記凹部を塞ぐようにして取着された透光性蓋体とを具備していることを特徴とする光半導体装置。 The optical semiconductor element housing package according to any one of claims 1 to 3, wherein the optical semiconductor element housing package is housed in the recess, and the lower surfaces of both end portions on the short side are joined to the upper surface of the pedestal, and an electrode is the lead A light comprising: a rectangular optical semiconductor element electrically connected to a terminal; and a translucent cover attached to the upper surface of the insulating base so as to close the recess. Semiconductor device.
JP2004019873A 2004-01-28 2004-01-28 Package for storing optical semiconductor element and optical semiconductor device Pending JP2005217027A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004019873A JP2005217027A (en) 2004-01-28 2004-01-28 Package for storing optical semiconductor element and optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004019873A JP2005217027A (en) 2004-01-28 2004-01-28 Package for storing optical semiconductor element and optical semiconductor device

Publications (1)

Publication Number Publication Date
JP2005217027A true JP2005217027A (en) 2005-08-11

Family

ID=34903964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004019873A Pending JP2005217027A (en) 2004-01-28 2004-01-28 Package for storing optical semiconductor element and optical semiconductor device

Country Status (1)

Country Link
JP (1) JP2005217027A (en)

Similar Documents

Publication Publication Date Title
US8477239B2 (en) Integrated lens and chip assembly for a digital camera
TWI392337B (en) Wafer based camera module and method of manufacture
JP2006276463A (en) Module for optical device and method of manufacturing module for optical device
JP3838573B2 (en) Solid-state imaging device
JP2009044494A (en) Imaging device
JP2005101484A (en) Optical semiconductor device
JP2005217027A (en) Package for storing optical semiconductor element and optical semiconductor device
JP2006041456A (en) Package for containing optical semiconductor element and optical semiconductor device
JP2002289718A (en) Solid-state image pickup device
JP2007035906A (en) Package for housing electronic component, and electronic device provided therewith
JP2005116993A (en) Optical semiconductor device
CN104349079B (en) Image sensing module
JP2005217024A (en) Optical semiconductor device
JP4172782B2 (en) Optical semiconductor element storage package and optical semiconductor device
JP2005159088A (en) Optical semiconductor device
JP2005101337A (en) Optical semiconductor device
JP2005093676A (en) Optical semiconductor device
JP4522236B2 (en) Electronic device and electronic device mounting structure
JP2005159086A (en) Optical semiconductor device
JP4511399B2 (en) Electronic component storage package and electronic device
JP2005050940A (en) Semiconductor device
JP2007201945A (en) Semiconductor device
JP2006013264A (en) Package for accommodating optical semiconductor device, and optical semiconductor apparatus
JP2005210045A (en) Optical semiconductor device
JP2005217025A (en) Optical semiconductor device