JP2005101484A - Optical semiconductor device - Google Patents

Optical semiconductor device Download PDF

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JP2005101484A
JP2005101484A JP2003397317A JP2003397317A JP2005101484A JP 2005101484 A JP2005101484 A JP 2005101484A JP 2003397317 A JP2003397317 A JP 2003397317A JP 2003397317 A JP2003397317 A JP 2003397317A JP 2005101484 A JP2005101484 A JP 2005101484A
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optical semiconductor
semiconductor device
insulating base
semiconductor element
substrate
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Satoshi Miura
聡 三浦
Takeshi Hasegawa
剛 長谷川
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Kyocera Corp
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

<P>PROBLEM TO BE SOLVED: To provide an optical semiconductor device that can operate stably by efficiently radiating the heat generated in the device to the outside. <P>SOLUTION: The optical semiconductor device 9 is provided with an insulating substrate 1 having a recessed section for housing and mounting an optical semiconductor element 4 on its top surface, lead terminals 2 led out from the inside of the recessed section through the substrate 1, and the optical semiconductor element 4 mounted on the mounting section of the bottom face of the recessed section in a state where the electrodes 6 of the element 4 are electrically connected to the lead terminals 2. The device 9 is also provided with a light-transmissive lid body 3 attached to the top surface of the substrate 1 to cover the recessed section. In the substrate 1, in addition, through holes 1c are formed from the portions of the bottom face of the recessed section immediately under the lead terminals 2 to the bottom surface of the substrate 1 and, at the same time, heat radiating members 5 are inserted into the holes 1c. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、ラインセンサー，フォトダイオード（ＰＤ），イメージセンサー等の固体撮像素子またはこれらの画像撮像部を有する光半導体素子を具備した光半導体装置に関する。   The present invention relates to an optical semiconductor device including a solid-state imaging device such as a line sensor, a photodiode (PD), an image sensor, or an optical semiconductor device having these image imaging units.

従来のラインセンサー，ＰＤ，イメージセンサー等の固体撮像素子またはこれらの画像撮像部を有する光半導体素子を具備した光半導体装置は、光半導体素子収納用の凹部を上面に有する絶縁基体の凹部内に光半導体素子を収容して搭載し、凹部を透光性蓋体で塞いで光半導体素子を気密封止することにより基本的に構成される。   An optical semiconductor device having a conventional solid-state imaging device such as a line sensor, PD, or image sensor, or an optical semiconductor element having these image imaging units, is provided in a concave portion of an insulating substrate having a concave portion for accommodating the optical semiconductor element on the upper surface. The optical semiconductor element is accommodated and mounted, and the optical semiconductor element is basically hermetically sealed by closing the recess with a light-transmitting lid.

この絶縁基体は、通常、光半導体素子の形状に応じた四角形状等の樹脂等から成り、例えば、光半導体素子がラインセンサーの場合であれば、細長い長方形状のラインセンサーを搭載するのに適した長方形状である。   This insulating base is usually made of a resin having a rectangular shape corresponding to the shape of the optical semiconductor element. For example, if the optical semiconductor element is a line sensor, it is suitable for mounting an elongated rectangular line sensor. It is a rectangular shape.

また、透光性蓋体は、透明なガラス板等の透光性の部材により形成されたものであり、絶縁基体に搭載された光半導体素子を覆うようにして絶縁基体に取着される。   The translucent lid is formed of a translucent member such as a transparent glass plate, and is attached to the insulating base so as to cover the optical semiconductor element mounted on the insulating base.

光半導体素子は、絶縁基体の上面に形成された凹部の底面の中央部に載置固定されており、光半導体素子の上面の中央部には受光部が、外周部には電極が設けられている。   The optical semiconductor element is mounted and fixed at the central portion of the bottom surface of the recess formed on the upper surface of the insulating base, and the light receiving portion is provided at the central portion of the upper surface of the optical semiconductor element, and the electrode is provided at the outer peripheral portion. Yes.

また、絶縁基体の凹部の内側から外側にかけて導出するようにリード端子が設けられており、このリード端子のうち凹部の内側に露出した部位に光半導体素子の電極が、Ａｕ，Ａｌ等からなるボンディングワイヤにより電気的に接続される。   In addition, a lead terminal is provided so as to be led out from the inside to the outside of the concave portion of the insulating base, and the electrode of the optical semiconductor element is bonded to the portion exposed to the inside of the concave portion of the lead terminal, such as Au, Al, etc. It is electrically connected by a wire.

なお、絶縁基体の上面の凹部は、平板状の基板の外周部に、光半導体素子が搭載される領域を取り囲むようにして遮光性の枠体を接合することにより形成される。また、基板と枠体とは一体成形されていてもよい。   The concave portion on the upper surface of the insulating base is formed by joining a light-shielding frame to the outer periphery of the flat substrate so as to surround the region where the optical semiconductor element is mounted. Moreover, the board | substrate and the frame may be integrally molded.

このように光半導体素子が気密封止されて成る光半導体装置は、各種の光学機器に部品として実装されて使用される。例えば、光半導体素子がラインセンサーの場合であれば、スキャナーやマルチファンクションプリンター，バーコードリーダー等の機器を構成する回路基板に実装される。なお、このときの光半導体装置の回路基板等に対する位置合わせは、光半導体装置の外縁部を回路基板の所定位置に合わせることにより行われる。
特開平５−１９０８７９号公報 An optical semiconductor device in which an optical semiconductor element is hermetically sealed in this manner is mounted and used as a component in various optical devices. For example, if the optical semiconductor element is a line sensor, it is mounted on a circuit board constituting a device such as a scanner, a multifunction printer, or a barcode reader. Note that the alignment of the optical semiconductor device with respect to the circuit board or the like at this time is performed by aligning the outer edge portion of the optical semiconductor device with a predetermined position of the circuit substrate.
Japanese Patent Laid-Open No. 5-190879

しかしながら、上記従来の光半導体装置においては、光半導体装置内の光半導体素子にボンディングワイヤを通し電気を流し作動させると、光半導体素子に熱が発生し、そして絶縁基体が樹脂等からなり熱伝導性が低いことから、光半導体装置内に熱が蓄積して光半導体素子の温度が高くなり、その結果、光半導体素子が正常に作動しない場合があるという問題があった。   However, in the conventional optical semiconductor device described above, when the optical semiconductor element in the optical semiconductor device is operated by passing electricity through a bonding wire, heat is generated in the optical semiconductor element, and the insulating substrate is made of resin or the like to conduct heat. Therefore, there is a problem in that heat accumulates in the optical semiconductor device and the temperature of the optical semiconductor element increases, and as a result, the optical semiconductor element may not operate normally.

このような問題があることから、例えばラインセンサーを気密封止して成る光半導体装置をスキャナーやマルチファンクションプリンター，バーコードリーダー等に組み込んだ場合、ラインセンサーによる検知に誤作動が生じるといった問題点が発生していた。   Because of these problems, for example, when an optical semiconductor device that is hermetically sealed with a line sensor is incorporated into a scanner, multifunction printer, barcode reader, etc., malfunctions may occur in detection by the line sensor. Had occurred.

また、光半導体素子が発生した熱を逃がすために、熱伝導率の高いセラミック材料により絶縁基板を形成する等の手法も考えられるが、セラミック材料は焼成時の収縮にともなう寸法の制御が難しいことから、絶縁基板の寸法精度をあまり高くすることができないため、凹部の内側から外側に導出するようにしてリード端子を絶縁基体に取着するとき、位置ずれを起こし易いという問題がある。   In addition, in order to release the heat generated by the optical semiconductor element, a method such as forming an insulating substrate with a ceramic material having high thermal conductivity is also conceivable. However, it is difficult to control the dimensions of ceramic material due to shrinkage during firing. Therefore, since the dimensional accuracy of the insulating substrate cannot be increased so much, there is a problem that when the lead terminal is attached to the insulating base so as to be led out from the inside to the outside of the concave portion, the positional deviation is likely to occur.

また、セラミックスからなる絶縁基板は外形精度が悪いため、光半導体素子を絶縁基体に収容し搭載する際や、光半導体装置を回路基板等に絶縁基板の外縁部で位置合わせして搭載する際の位置精度をあまり高くすることができず、高い精度を持った光半導体装置の製造が困難であるという問題もあった。   In addition, since the external accuracy of an insulating substrate made of ceramics is poor, when an optical semiconductor element is housed and mounted in an insulating base, or an optical semiconductor device is mounted on a circuit board or the like by being aligned at the outer edge of the insulating substrate. There is also a problem that the positional accuracy cannot be increased so much that it is difficult to manufacture an optical semiconductor device having high accuracy.

また、絶縁基板をセラミック材料で形成する場合、光半導体装置の構造が複雑になり、焼成等の製造工程が増加するとともに製造の作業性が悪くなり、コストダウンが行なえないという問題点があった。   Further, when the insulating substrate is formed of a ceramic material, the structure of the optical semiconductor device becomes complicated, the manufacturing process such as firing increases, the manufacturing workability deteriorates, and the cost cannot be reduced. .

従って、本発明は上記従来の問題に鑑みて完成されたものであり、その目的は、高い寸法精度を有するとともに光半導体素子が発生した熱を有効に外部に放散することができ、その結果、光半導体素子を長期にわたって安定して正常に作動させることが可能な受光特性等の特性の良好な光半導体装置を提供することにある。   Accordingly, the present invention has been completed in view of the above-described conventional problems, and the object thereof is to have high dimensional accuracy and to effectively dissipate heat generated by the optical semiconductor element to the outside. An object of the present invention is to provide an optical semiconductor device having good characteristics such as light receiving characteristics, which can stably operate an optical semiconductor element over a long period of time.

本発明の光半導体装置は、上面に光半導体素子を収容し搭載するための凹部を有する樹脂製の絶縁基体と、前記絶縁基体を貫通して前記凹部の内側から外側に導出されるように設けられたリード端子と、前記凹部の底面の搭載部に搭載されるとともに電極が前記リード端子に電気的に接続された光半導体素子と、前記絶縁基体の上面に前記凹部を塞ぐようにして取着された透光性蓋体とを具備した光半導体装置において、前記絶縁基体は、前記凹部の底面の前記リード端子直下の部位から前記絶縁基体の下面にかけて貫通孔が形成されているとともに該貫通孔に放熱部材が嵌着されていることを特徴とする光半導体装置である。   An optical semiconductor device of the present invention is provided with a resin-made insulating base having a recess for accommodating and mounting an optical semiconductor element on an upper surface, and extending through the insulating base and led out from the inside of the recess. A lead terminal, an optical semiconductor element mounted on a mounting portion on the bottom surface of the concave portion and an electrode electrically connected to the lead terminal, and an upper surface of the insulating base so as to close the concave portion In the optical semiconductor device including the light-transmitting lid, the insulating base has a through hole formed from a portion of the bottom surface of the concave portion immediately below the lead terminal to a lower surface of the insulating base and the through hole. An optical semiconductor device characterized in that a heat radiating member is fitted to the optical semiconductor device.

本発明の光半導体装置は、好ましくは、前記絶縁基体に形成された貫通孔は、前記絶縁基体の上面側から下面側に向かうに伴って内寸法が漸次大きくなっていることを特徴とするものである。   The optical semiconductor device of the present invention is preferably characterized in that the inner dimension of the through hole formed in the insulating base gradually increases from the upper surface side to the lower surface side of the insulating base material. It is.

本発明の光半導体装置によれば、凹部の底面のリード端子直下の部位から絶縁基体の下面にかけて貫通孔が形成されているとともに貫通孔に放熱部材が嵌着されていることから、光半導体素子で発生した熱を放熱部材を介して効果的に外部に放出することができ、光半導体素子が長期にわたって安定して作動することが可能な光半導体装置を提供することができる。   According to the optical semiconductor device of the present invention, the through-hole is formed from the portion immediately below the lead terminal on the bottom surface of the recess to the lower surface of the insulating base and the heat dissipation member is fitted into the through-hole. It is possible to provide an optical semiconductor device capable of effectively releasing the heat generated in step 1 to the outside through the heat dissipating member and allowing the optical semiconductor element to operate stably over a long period of time.

また絶縁基体が樹脂製であることから、セラミックスのように焼成等の大きな寸法収縮をともなう工程が不要な材料から成るため、絶縁基体の寸法精度を高いものとすることができ、高い位置精度および寸法精度で光半導体素子を装絶縁基体に搭載することができる。さらに、光半導体装置を外部の回路基板に実装するときの位置合わせの精度を高くすることができ、実装時の位置精度に優れた光半導体装置を提供することができる。また、光半導体素子が光半導体装置内で位置ずれすることもなく、光半導体装置を歩留まり良く低コストで製造できる。   In addition, since the insulating base is made of resin, it is made of a material that does not require a process with large dimensional shrinkage, such as firing, such as ceramics. Therefore, the dimensional accuracy of the insulating base can be increased, and high positional accuracy and The optical semiconductor element can be mounted on the insulating base with dimensional accuracy. Furthermore, it is possible to increase the alignment accuracy when the optical semiconductor device is mounted on an external circuit board, and it is possible to provide an optical semiconductor device with excellent positional accuracy during mounting. In addition, the optical semiconductor device can be manufactured with a high yield and low cost without the optical semiconductor element being displaced in the optical semiconductor device.

また、本発明の光半導体装置は、好ましくは、絶縁基体に形成された貫通孔は、絶縁基体の上面側から下面側に向かうに伴って内寸法が漸次大きくなっていることから、その内部に嵌着されている放熱部材は伝熱方向に断面積が広がるような形状となるため、光半導体素子で発生した熱を放熱部材を介してより一層効果的に外部に放出することができ、より確実に光半導体素子が長期にわたって安定して作動することが可能な光半導体装置を提供することができる。   In the optical semiconductor device of the present invention, preferably, the through-hole formed in the insulating base gradually increases in inner dimension from the upper surface side to the lower surface side of the insulating base. Since the fitted heat dissipation member has a shape in which the cross-sectional area widens in the heat transfer direction, the heat generated in the optical semiconductor element can be more effectively released to the outside through the heat dissipation member. An optical semiconductor device in which an optical semiconductor element can reliably operate stably over a long period of time can be provided.

本発明の光半導体装置について以下に詳細に説明する。図１は本発明の光半導体装置の実施の形態の一例を示す断面図である。図１において、１は絶縁基体、２はリード端子、３は蓋体、４は光半導体素子、５は放熱部材である。これらの絶縁基体１、リード端子２、蓋体３、光半導体素子および放熱部材５により主に光半導体装置９が基本的に構成される。   The optical semiconductor device of the present invention will be described in detail below. FIG. 1 is a cross-sectional view showing an example of an embodiment of an optical semiconductor device of the present invention. In FIG. 1, 1 is an insulating substrate, 2 is a lead terminal, 3 is a lid, 4 is an optical semiconductor element, and 5 is a heat dissipation member. An optical semiconductor device 9 is basically composed mainly of the insulating base 1, the lead terminal 2, the lid 3, the optical semiconductor element, and the heat dissipation member 5.

なお、１ａは絶縁基体１と光半導体素子４とを接合する樹脂接合材、１ｂは絶縁基体１と透光性蓋体３を接合する樹脂接合材、１ｃは絶縁基体１に形成され内部に放熱部材５が嵌着された貫通孔である。   1a is a resin bonding material for bonding the insulating substrate 1 and the optical semiconductor element 4, 1b is a resin bonding material for bonding the insulating substrate 1 and the transparent lid 3, and 1c is formed on the insulating substrate 1 to dissipate heat. It is a through hole in which the member 5 is fitted.

本発明の絶縁基体１は、エポキシ樹脂、ガラスエポキシ樹脂、ポリイミド等の樹脂材料によって形成される。絶縁基体１の上面には、光半導体素子４を収容し搭載するための凹部が設けられている。このような凹部を有する絶縁基体１は、例えば、エポキシ樹脂からなる場合、未硬化のエポキシ樹脂を所定の絶縁基体１の形状に成形できるような金型を用いて、トランスファーモールド法やインジェクションモールド法等により成形することにより形成される。この場合、平板状の基板部と四角枠状の枠部とを別々に成形しておいて、その後、基板部の上面の外周部に枠部を接合することにより凹部を形成するようにしてもよく、凹部が形成されるような金型を用いて一体的に成形してもよい。   The insulating substrate 1 of the present invention is formed of a resin material such as an epoxy resin, a glass epoxy resin, or polyimide. On the upper surface of the insulating substrate 1, a recess for receiving and mounting the optical semiconductor element 4 is provided. When the insulating substrate 1 having such a recess is made of, for example, an epoxy resin, a transfer mold method or an injection mold method is used by using a mold capable of forming an uncured epoxy resin into a predetermined shape of the insulating substrate 1. Formed by molding. In this case, the flat plate portion and the square frame portion may be separately formed, and then the concave portion may be formed by joining the frame portion to the outer peripheral portion of the upper surface of the substrate portion. Alternatively, it may be integrally formed using a mold in which a recess is formed.

本発明の光半導体装置９によれば、絶縁基体１が樹脂製であり、セラミックスのように焼成等の大きな寸法収縮をともなう工程が不要な材料から成るため、絶縁基体１の寸法精度を高いものとすることができ、高い位置精度および寸法精度で光半導体素子４を絶縁基体１に搭載することができる。さらに、光半導体装置９を外部の回路基板に実装するときの位置合わせの精度を高くすることができ、実装時の位置精度に優れた光半導体装置９を提供することができる。また、光半導体素子４が光半導体装置９内で位置ずれすることはなく、光半導体装置９を歩留まり良く低コストで製造できる。   According to the optical semiconductor device 9 of the present invention, since the insulating base 1 is made of a resin and is made of a material that does not require a process with large dimensional shrinkage such as firing, such as ceramics, the insulating base 1 has high dimensional accuracy. The optical semiconductor element 4 can be mounted on the insulating substrate 1 with high positional accuracy and dimensional accuracy. Furthermore, it is possible to increase the alignment accuracy when mounting the optical semiconductor device 9 on an external circuit board, and it is possible to provide the optical semiconductor device 9 having excellent positional accuracy during mounting. Further, the optical semiconductor element 4 is not displaced in the optical semiconductor device 9, and the optical semiconductor device 9 can be manufactured with good yield and low cost.

また、絶縁基体１の凹部の内側から外側に導出するようにしてリード端子２が設けられている。リード端子２は鉄−ニッケル−コバルト合金や鉄−ニッケル合金等の鉄系合金や、銅または銅系の合金等からなる。このリード端子２は、例えば、鉄−ニッケル−コバルト合金から成る場合、鉄−ニッケル−コバルト合金の板材に打抜き加工やエッチング加工等を施し、所定の寸法、形状に加工することにより形成される。   A lead terminal 2 is provided so as to be led out from the inside to the outside of the recess of the insulating base 1. The lead terminal 2 is made of an iron-based alloy such as an iron-nickel-cobalt alloy or an iron-nickel alloy, or copper or a copper-based alloy. For example, when the lead terminal 2 is made of an iron-nickel-cobalt alloy, the lead terminal 2 is formed by punching or etching a plate material of the iron-nickel-cobalt alloy and processing the plate into a predetermined size and shape.

リード端子２を、凹部の内側から外側に導出するようにして設けるには、例えば、複数のリード端子２の一端部をフレームで連結してなるリードフレームを、フレームが凹部の外側（絶縁基体１の側面よりも外側）に出るとともに、フレームで連結していない側の各端部が凹部内に露出するようにして、絶縁基体１を成形する金型内にセットしておき、絶縁基体１となる未硬化の樹脂をリードフレームと一体的に加熱硬化させること等の方法を用いることができる。この場合、リード端子２を絶縁基体１に設けた後、フレームは切断除去する。   In order to provide the lead terminal 2 so as to be led out from the inside to the outside of the concave portion, for example, a lead frame formed by connecting one end portions of a plurality of lead terminals 2 with a frame is used. The insulating base 1 is set in a mold for molding so that each end on the side not connected by the frame is exposed in the recess, and the insulating base 1 A method such as heat-curing the uncured resin integrally with the lead frame can be used. In this case, after the lead terminal 2 is provided on the insulating substrate 1, the frame is cut and removed.

本発明の光半導体装置９においては、絶縁基体１の凹部の底面のリード端子２の直下の部位から絶縁基体１の下面にかけて貫通孔１ｃが形成されているとともに、貫通孔１ｃ内に放熱部材５が嵌着されている。これにより、光半導体素子４で発生した熱を放熱部材５を介して効果的に外部に放出することができ、光半導体素子４が長期にわたって安定して作動することが可能な光半導体装置９を提供することができる。   In the optical semiconductor device 9 of the present invention, a through hole 1c is formed from a portion immediately below the lead terminal 2 on the bottom surface of the recess of the insulating base 1 to the lower surface of the insulating base 1, and a heat radiating member 5 is formed in the through hole 1c. Is inserted. As a result, the optical semiconductor device 9 capable of effectively releasing the heat generated in the optical semiconductor element 4 to the outside through the heat radiating member 5 and enabling the optical semiconductor element 4 to operate stably over a long period of time. Can be provided.

放熱部材５は、光半導体素子４で発生する熱の放熱性を良好とするうえでは、その体積が大きければ大きいほど好ましいものとなるが、大きくしすぎると、絶縁基体１の機械的強度を確保することが難しくなる。従って、放熱部材５の大きさはその体積が３〜１２０ｍｍ３の範囲が好ましい。また、放熱部材５は、アルミニウムあるいはその合金、銅あるいはその合金が、熱伝導性が高いため好ましい。 The heat radiating member 5 is more preferable as its volume is larger in order to improve the heat radiating property of the heat generated in the optical semiconductor element 4, but if it is too large, the mechanical strength of the insulating substrate 1 is ensured. It becomes difficult to do. Therefore, the size of the heat dissipation member 5 is preferably in the range of 3 to 120 mm 3 in volume. As the heat dissipating member 5, aluminum or an alloy thereof, copper or an alloy thereof is preferable because of high thermal conductivity.

なお、放熱部材５を絶縁基体１の貫通孔１ｃに嵌着させる方法としては、例えば、接着剤による接着、または絶縁基体１を樹脂成形する際に樹脂と放熱部材５とを一括成形する等の方法を用いることができる。   In addition, as a method of fitting the heat radiating member 5 into the through hole 1c of the insulating base 1, for example, bonding with an adhesive or forming the resin and the heat radiating member 5 at the same time when the insulating base 1 is formed by resin molding is performed. The method can be used.

また放熱部材５は、円柱状、角柱状等の柱状や樽状の形状、または立方体、直方体、球形等の種々の形状とすることができるが、良好な熱伝導性を得るうえで柱状、立方体、直方体等の形状がよい。   The heat radiating member 5 may have a columnar shape such as a columnar shape, a prismatic shape, a barrel shape, or various shapes such as a cube, a rectangular parallelepiped, a sphere, etc. The shape of a rectangular parallelepiped is good.

また、放熱部材５の下端面は平坦面であることがよく、その場合、放熱部材５の下端面を外部のヒートシンクや回路基板等に接触させて熱を効率良く放熱させることができる。   In addition, the lower end surface of the heat radiating member 5 is preferably a flat surface. In this case, the lower end surface of the heat radiating member 5 can be brought into contact with an external heat sink, a circuit board, or the like to efficiently dissipate heat.

また、放熱部材５の下端は絶縁基体１の下面から若干突出していることがよく、この場合、放熱部材５の下端面を外部のヒートシンクや回路基板等に確実に接触させて熱を効率良く放熱させることができる。またこの場合、リード端子２のうち接地用のものを、金属から成る放熱部材５を介して外部回路の接地電極等に電気的に接続することもでき、安定した接地性を得ることができる。   Further, it is preferable that the lower end of the heat radiating member 5 slightly protrudes from the lower surface of the insulating base 1, and in this case, the lower end surface of the heat radiating member 5 is reliably brought into contact with an external heat sink, a circuit board, etc. Can be made. In this case, the lead terminal 2 for grounding can be electrically connected to a ground electrode of an external circuit through the heat radiating member 5 made of metal, and stable grounding can be obtained.

さらに、放熱部材５は、絶縁基体１の凹部の底面のリード端子２の直下の部位であって、光半導体素子４の両端部の直下の部位に設けることが好ましい。これは、ラインセンサー，イメージセンサー等の光半導体素子４の熱発生量はその中央部よりも両端部で大きいことによる。   Further, the heat radiating member 5 is preferably provided in a portion immediately below the lead terminal 2 on the bottom surface of the concave portion of the insulating base 1 and immediately below both ends of the optical semiconductor element 4. This is because the amount of heat generated by the optical semiconductor element 4 such as a line sensor or an image sensor is larger at both ends than at the center.

また、本発明の光半導体装置９は、図２に示すように、絶縁基体１に形成された貫通孔１ｃは、絶縁基体１の上面側から下面側に向かうに伴って内寸法が漸次大きくなっていることが好ましい。この場合、貫通孔１ｃの内部に嵌着されている放熱部材５は伝熱方向に断面積が広がるような形状となるため、光半導体素子４で発生した熱を放熱部材５を介してより一層効果的に外部に放出することができ、より確実に光半導体素子４が長期にわたって安定して作動することが可能な光半導体装置９を作製することができる。   Further, in the optical semiconductor device 9 of the present invention, as shown in FIG. 2, the inner dimension of the through hole 1 c formed in the insulating base 1 gradually increases from the upper surface side to the lower surface side of the insulating base 1. It is preferable. In this case, since the heat radiating member 5 fitted inside the through hole 1c has a shape in which the cross-sectional area expands in the heat transfer direction, the heat generated in the optical semiconductor element 4 is further transmitted through the heat radiating member 5. The optical semiconductor device 9 that can be effectively discharged to the outside and the optical semiconductor element 4 can operate more reliably and stably over a long period of time can be manufactured.

透光性蓋体３は、高い光透過率、製造のし易さ、化学的安定性、強度等の点で、ソーダガラス等のガラス、プラスチック、サファイア（アルミナの単結晶）、石英等から成るのが好ましい。   The translucent cover 3 is made of glass such as soda glass, plastic, sapphire (alumina single crystal), quartz or the like in terms of high light transmittance, ease of manufacture, chemical stability, strength, and the like. Is preferred.

この絶縁基体１の凹部内に光半導体素子４が収容され搭載されるとともに、その電極が、リード端子２のうち凹部内に露出した部位にＡｕ，Ａｌ等からなるボンディングワイヤ７等を介して接続される。   The optical semiconductor element 4 is housed and mounted in the concave portion of the insulating base 1, and its electrode is connected to a portion of the lead terminal 2 exposed in the concave portion via a bonding wire 7 made of Au, Al, or the like. Is done.

光半導体素子４は、ＰＤ，ラインセンサー，イメージセンサー，ＣＣＤ（Charge Coupled Device），ＥＰＲＯＭ（Erasable Programmable ＲＯＭ）等の固体撮像素子、またはこれらの撮像部を有する光半導体素子４から成るものである。   The optical semiconductor element 4 includes a solid-state imaging element such as a PD, a line sensor, an image sensor, a CCD (Charge Coupled Device), an EPROM (Erasable Programmable ROM), or an optical semiconductor element 4 having these imaging units.

また、絶縁基体１と光半導体素子４とを接合する樹脂接合材１ａが紫外線硬化性樹脂から成る場合、熱硬化性樹脂を使用する場合にくらべ、接着のための加熱工程が省かれるため、絶縁基体１と光半導体素子４との熱膨張係数の差に起因する反りが絶縁基体１に発生せず、受光画像に歪みなどが発生しないため、より一層高い信頼性を有する光半導体装置９を作製することができ、好ましい。   Further, when the resin bonding material 1a for bonding the insulating substrate 1 and the optical semiconductor element 4 is made of an ultraviolet curable resin, a heating process for bonding is omitted as compared with the case of using a thermosetting resin. Since the warp caused by the difference in thermal expansion coefficient between the substrate 1 and the optical semiconductor element 4 does not occur in the insulating substrate 1 and the received light image is not distorted, the optical semiconductor device 9 having higher reliability is manufactured. Can be preferred.

また、絶縁基体１と透光性蓋体３とを接合する樹脂接合材１ｂは、常温で硬化させることが可能で、光半導体素子４に与える影響が小さいことから、紫外線硬化性樹脂からなることが好ましい。この場合、光半導体素子４を載置してから透光性蓋体３を取り付けて封止するまで、オーブン等の中に長時間放置する必要がなくなる。その結果、光半導装置９の内部にダスト、異物等の混入がなくなり、製造歩留まりを飛躍的に向上させ得る。   In addition, the resin bonding material 1b for bonding the insulating base 1 and the translucent lid 3 can be cured at room temperature and has a small influence on the optical semiconductor element 4, and therefore is made of an ultraviolet curable resin. Is preferred. In this case, it is not necessary to leave the optical semiconductor element 4 in an oven or the like for a long time from when the optical semiconductor element 4 is placed to when the translucent lid 3 is attached and sealed. As a result, dust, foreign matter, and the like are not mixed in the optical semiconductor device 9, and the manufacturing yield can be dramatically improved.

またエポキシ樹脂等の紫外線硬化性樹脂から成る樹脂接合材１ｂは、余計な外光の入射を遮断するために、樹脂に黒色，茶褐色，暗緑色，濃青色等の暗色系の顔料や染料を混入させてもよい。   In addition, the resin bonding material 1b made of an ultraviolet curable resin such as epoxy resin is mixed with dark pigments or dyes such as black, brown, dark green, and dark blue in order to block the extraneous light from entering. You may let them.

なお、本発明は上記実施の形態に限定されず、本発明の要旨を逸脱しない範囲内で種々の変更を行なうことは何等差し支えない。   Note that the present invention is not limited to the above-described embodiment, and various modifications may be made without departing from the scope of the present invention.

本発明の光半導体装置の実施の形態の一例を示す断面図である。It is sectional drawing which shows an example of embodiment of the optical semiconductor device of this invention. 本発明の光半導体装置の実施の形態の他の例を示す断面図である。It is sectional drawing which shows the other example of embodiment of the optical semiconductor device of this invention.

符号の説明Explanation of symbols

１・・・絶縁基体
１ｂ・・・樹脂接合材
１ｃ・・・貫通孔
２・・・リード端子
３・・・蓋体
４・・・光半導体素子
５・・・放熱部材
９・・・光半導体装置 DESCRIPTION OF SYMBOLS 1 ... Insulation base | substrate 1b ... Resin bonding material 1c ... Through-hole 2 ... Lead terminal 3 ... Cover body 4 ... Optical semiconductor element 5 ... Radiation member 9 ... Optical semiconductor apparatus

Claims (2)

上面に光半導体素子を収容し搭載するための凹部を有する樹脂製の絶縁基体と、該絶縁基体を貫通して前記凹部の内側から外側に導出されるように設けられたリード端子と、前記凹部の底面の搭載部に搭載されるとともに電極が前記リード端子に電気的に接続された光半導体素子と、前記絶縁基体の上面に前記凹部を塞ぐようにして取着された透光性蓋体とを具備した光半導体装置において、前記絶縁基体は、前記凹部の底面の前記リード端子直下の部位から前記絶縁基体の下面にかけて貫通孔が形成されているとともに該貫通孔に放熱部材が嵌着されていることを特徴とする光半導体装置。 A resin insulating base having a recess for accommodating and mounting an optical semiconductor element on the upper surface, a lead terminal provided so as to penetrate the insulating base and be led out from the inside of the recess, and the recess An optical semiconductor element mounted on the mounting portion on the bottom surface and having an electrode electrically connected to the lead terminal, and a translucent lid attached to the upper surface of the insulating base so as to close the recess. In the optical semiconductor device having the above structure, the insulating base includes a through hole formed from a portion of the bottom surface of the concave portion immediately below the lead terminal to a lower surface of the insulating base, and a heat dissipation member is fitted into the through hole. An optical semiconductor device. 前記絶縁基体に形成された前記貫通孔は、前記絶縁基体の上面側から下面側に向かうに伴って内寸法が漸次大きくなっていることを特徴とする請求項１記載の光半導体装置。 2. The optical semiconductor device according to claim 1, wherein an inner dimension of the through hole formed in the insulating base is gradually increased from the upper surface side to the lower surface side of the insulating base.
JP2003397317A 2003-09-02 2003-11-27 Optical semiconductor device Pending JP2005101484A (en)

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JP2006332841A (en) * 2005-05-24 2006-12-07 Shimadzu Corp Image pickup device assembly
JP2008181951A (en) * 2007-01-23 2008-08-07 Nec Electronics Corp Solid-state imaging apparatus
JP2011028888A (en) * 2009-07-22 2011-02-10 Yu-Lin Chu Heat radiation structure of led lamp
JP2012227270A (en) * 2011-04-18 2012-11-15 Kyocera Corp Imaging element mounting member and imaging device
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US8684550B2 (en) 2009-01-07 2014-04-01 Samsung Display Co., Ltd. Light source, light-emitting module having the same and backlight unit have the same
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JP2006332841A (en) * 2005-05-24 2006-12-07 Shimadzu Corp Image pickup device assembly
JP2008181951A (en) * 2007-01-23 2008-08-07 Nec Electronics Corp Solid-state imaging apparatus
US8031244B2 (en) * 2007-01-23 2011-10-04 Renesas Electronics Corporation Device for releasing heat generated in the amplifier unit of a solid-state image sensing element
US8684550B2 (en) 2009-01-07 2014-04-01 Samsung Display Co., Ltd. Light source, light-emitting module having the same and backlight unit have the same
JP2011028888A (en) * 2009-07-22 2011-02-10 Yu-Lin Chu Heat radiation structure of led lamp
JP2012227270A (en) * 2011-04-18 2012-11-15 Kyocera Corp Imaging element mounting member and imaging device
JP2014036049A (en) * 2012-08-07 2014-02-24 Sinfonia Technology Co Ltd Purge nozzle unit, purge device, load port
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US9502455B2 (en) 2012-11-30 2016-11-22 Panasonic Corporation Optical apparatus having resin encased stacked optical and semiconductor devices
JPWO2014083750A1 (en) * 2012-11-30 2017-01-05 パナソニック株式会社 Optical device and manufacturing method thereof

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