JP2005191143A - Method and apparatus for substrate treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment method and apparatus which can form a thin oxide film evenly on the surface of a substrate while easily controlling the thickness of the oxide film. <P>SOLUTION: In wash-treatment sections 5a-5d, ozone water is supplied onto the surface of the substrate W being held and rotated by a spin chuck 21 from a nozzle 50 for oxidation treatment. Then, hydrogen fluoride water is supplied onto the surface of the substrate W which has been supplied with the ozone water from a nozzle 70 for etching. It is preferred that the ozone water and the hydrogen fluoride water are supplied onto the substrate W several times, say, twice or three times, etc. Thereafter, oxygen water is supplied onto the surface of the substrate W from the nozzle 50 for oxidation treatment. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus for performing various processes on a substrate.

  2. Description of the Related Art Conventionally, a substrate processing apparatus has been used to perform various processes on a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display device, and a glass substrate for an optical disk. For example, in a semiconductor device manufacturing process, a substrate processing apparatus is used in which a series of processes are unitized and a plurality of processing units are integrated in order to increase production efficiency.

  In recent years, a high dielectric constant gate insulating film (hereinafter abbreviated as a Hi-k film) may be formed on a substrate in a substrate processing process by a substrate processing apparatus. This Hi-k film is used to suppress gate leakage current in the transistor.

  In general, the Hi-k film is formed on the substrate surface by, for example, chemical vapor deposition (CVD). At the time of forming such a Hi-k film, a thin Hi-k film at the atomic layer level can be obtained by using an atomic layer deposition (ALD) technique.

  When forming such a thin Hi-k film, an oxide film needs to be formed in advance on the substrate surface.

  If an oxide film is not formed on the substrate surface, even if an attempt is made to start the formation of the Hi-k film, the film formation does not proceed until a predetermined time elapses, making it difficult to control the thickness of the Hi-k film. Become. On the other hand, when an oxide film is formed on the substrate surface in advance, the film formation proceeds immediately, so that the thickness of the Hi-k film can be easily controlled.

In the case of forming an oxide film on the substrate surface, for example, after etching the substrate surface using an aqueous solution containing hydrogen fluoride, ozone water is supplied to the substrate to form an oxide film (see, for example, Patent Document 1). ).
JP 2000-100777 A

  By the way, it is preferable that the oxide film formed on the substrate surface in advance when forming the Hi-k film is as thin as possible. This is because, when a thick oxide film is formed as a base of a high dielectric constant Hi-k film, that is, when the equivalent oxide thickness (EOT) is excessively large, the substrate from the Hi-k film is removed. This is because current leakage cannot be sufficiently suppressed. Specifically, the oxide film is preferably formed to a thickness of about 4 mm, for example.

  However, in the conventional method for forming an oxide film as described above, it has been relatively easy to form an oxide film of about 10 mm on the surface of the substrate, but it is possible to control the thickness of the oxide film to about 4 mm. It has been very difficult.

  In particular, when such an oxide film is formed, if the substrate surface is contaminated with organic substances, the growth rate of the oxide film varies, and an extremely thin oxide film cannot be obtained with good reproducibility.

  An object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of forming a thin and uniform oxide film on a substrate surface and easily controlling the thickness of the oxide film.

  A substrate processing method according to a first aspect of the present invention is a substrate processing method for performing a predetermined process on a substrate, the step of supplying an oxidizing treatment liquid to the substrate, and the step of supplying the etching liquid to the substrate after the supply of the oxidizing treatment liquid. And a step of supplying oxygen water to the substrate after the supply of the etching solution.

  In the substrate processing method according to the first aspect of the invention, an oxidizing film is formed on the substrate surface by supplying an oxidizing treatment liquid to the substrate, and impurities such as organic substances existing on the substrate surface are oxidized.

  Etching is performed by supplying an etching solution to the substrate. Thereby, impurities such as organic substances oxidized by the oxidizing treatment liquid are removed together with the oxide film by lift-off.

  Then, oxygen water is supplied to the clean substrate surface from which impurities have been removed. Thereby, a thin oxide film of oxygen water is uniformly formed on the substrate surface. Further, since oxygen water has low oxidizability and the formation rate of the oxide film is slow, the thickness of the oxide film can be easily controlled.

  The supply of the oxidizing treatment liquid to the substrate and the supply of the etching liquid to the substrate may be repeated. In this case, since the oxidizing treatment liquid and the etching liquid are repeatedly supplied to the substrate, the formation of the oxide film by the oxidizing treatment liquid, the oxidation of impurities such as organic substances existing on the substrate surface, the oxide film by the etching liquid, and Etching of impurities such as oxidized organic substances is repeated, and the cleanliness of the substrate is further improved.

  After supplying oxygen water, the substrate may be stored in an atmosphere of a reducing gas or an inert gas. In this case, after the oxygen water is supplied to the substrate, the substrate is stored in an atmosphere of a reducing gas or an inert gas, so that a thin oxide film formed on the substrate is prevented from becoming thick by touching the atmosphere. .

  The oxidizing treatment liquid may be ozone water or hydrogen peroxide water, and the etching liquid may be hydrogen fluoride water. In this case, an ozone film is formed by supplying ozone water or hydrogen peroxide water to the substrate, and impurities such as organic substances existing on the substrate surface are oxidized.

  Etching is performed by supplying hydrogen fluoride water to the substrate. Thereby, impurities such as organic substances oxidized by ozone water or hydrogen peroxide water are removed together with the oxide film by lift-off. Therefore, the surface of the substrate is kept clean.

  An oxide film having a thickness of 5 mm or less may be formed by supplying oxygen water to the substrate. Thus, even when an oxide film having a thickness of 5 mm or less is formed, the thickness can be easily controlled.

  A substrate processing apparatus according to a second aspect of the present invention is a substrate processing apparatus that performs predetermined processing on a substrate, and an oxidizing treatment liquid supply system that supplies an oxidizing treatment liquid to the substrate, and an oxidation by an oxidizing treatment liquid supply system. An etching solution supply system that supplies an etching solution to the substrate after the supply of the etching treatment solution, and an oxygen water supply system that supplies oxygen water to the substrate after the supply of the etching solution by the etching solution supply system are provided.

  In the substrate processing apparatus according to the second aspect of the present invention, an oxide film is formed on the substrate surface by supplying an oxidizing treatment liquid to the substrate by the oxidizing treatment liquid supply system, and an organic substance or the like present on the substrate surface Impurities are oxidized.

  Etching is performed by supplying the etching solution to the substrate by the etching solution supply system. Thereby, impurities such as organic substances oxidized by the oxidizing treatment liquid are removed together with the oxide film by lift-off.

  Then, oxygen water is supplied to the clean substrate surface from which impurities have been removed by an oxygen water supply system. Thereby, a thin oxide film of oxygen water is uniformly formed on the substrate surface. Further, since oxygen water has low oxidizability and the formation rate of the oxide film is slow, the thickness of the oxide film can be easily controlled.

  An oxidizing treatment liquid storing means for storing an oxidizing treatment liquid, an etching solution storing means for storing an etching liquid, and an oxygen water storing means for storing oxygen water are further provided, and the oxidizing treatment liquid supply system is an oxidizing treatment. The oxidizing treatment liquid stored by the liquid storage means is supplied to the substrate, the etching liquid supply system supplies the etching liquid stored by the etching liquid storage means to the substrate, and the oxygen water supply system is stored by the oxygen water storage means. Oxygen water may be supplied to the substrate.

  In this case, by supplying the oxidizing treatment liquid stored by the oxidizing treatment liquid storage means to the substrate, an oxide film can be formed on the substrate surface, and impurities such as organic substances existing on the substrate surface can be oxidized. . Further, the substrate surface can be etched by supplying the substrate with the etching solution stored by the etching solution storage means. Furthermore, a thin oxide film can be formed on the substrate surface by supplying oxygen water stored in the oxygen water storage means to the substrate.

  The oxidizing treatment liquid may be ozone water or hydrogen peroxide water, and the etching liquid may be hydrogen fluoride water. In this case, an ozone film is formed by supplying ozone water or hydrogen peroxide water to the substrate, and impurities such as organic substances existing on the substrate surface are oxidized.

  Etching is performed by supplying hydrogen fluoride water to the substrate. Thereby, impurities such as organic substances oxidized by ozone water or hydrogen peroxide water are removed together with the oxide film by lift-off. Therefore, the surface of the substrate is kept clean.

  The oxygen water supply system may form an oxide film having a thickness of 5 mm or less by supplying oxygen water to the substrate. Thus, even when an oxide film having a thickness of 5 mm or less is formed, the thickness can be easily controlled.

  In the substrate processing method according to the present invention, an oxide film is formed on the substrate surface by supplying an oxidizing treatment liquid to the substrate, and impurities such as organic substances existing on the substrate surface are oxidized.

  Etching is performed by supplying an etching solution to the substrate. Thereby, impurities such as organic substances oxidized by the oxidizing treatment liquid are removed together with the oxide film by lift-off.

  Then, oxygen water is supplied to the clean substrate surface from which impurities have been removed. Thereby, a thin oxide film of oxygen water is uniformly formed on the substrate surface. Further, since oxygen water has low oxidizability and the formation rate of the oxide film is slow, the thickness of the oxide film can be easily controlled.

  Hereinafter, a substrate processing method and a substrate processing apparatus according to an embodiment of the present invention will be described with reference to FIGS.

  In the following description, a substrate refers to a semiconductor wafer, a glass substrate for a liquid crystal display device, a glass substrate for a PDP (plasma display panel), a glass substrate for a photomask, a substrate for an optical disk, and the like.

  FIG. 1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 100 has processing areas A and B, and a transfer area C between the processing areas A and B.

  In the processing area A, a control unit 4, fluid box units 2a and 2b, and cleaning processing units 5a and 5b are arranged.

  1 are pipes, joints, valves, flow meters, regulators, pumps, temperatures for supplying chemical solutions to the cleaning processing units 5a, 5b and draining liquid from the cleaning processing units 5a, 5b, respectively. Houses fluid-related equipment such as regulators and treatment liquid storage tanks. Specific configuration examples of the fluid box portions 2a and 2b and the cleaning processing portions 5a and 5b will be described later.

  In the cleaning processing units 5a and 5b, a cleaning process using a chemical solution (hereinafter referred to as a chemical process) is performed. In the present embodiment, the chemical solution used in the cleaning processing units 5a and 5b is an oxidizing treatment solution such as ozone water or hydrogen peroxide solution, an etching solution such as hydrogen fluoride water, and oxygen water. In substrate processing apparatus 100 according to the present embodiment, ozone water is used as the oxidizing treatment liquid, and hydrogen fluoride water is used as the etching liquid.

  In the processing region B, fluid box portions 2c and 2d and cleaning processing portions 5c and 5d are arranged. Each of the fluid box portions 2c and 2d and the cleaning processing portions 5c and 5d has the same configuration as the fluid box portions 2a and 2b and the cleaning processing portions 5a and 5b, and the cleaning processing portions 5c and 5d are the cleaning processing portion 5a. , 5b.

  Hereinafter, the cleaning processing units 5a, 5b, 5c, and 5d are collectively referred to as processing units. In the transfer area C, a substrate transfer robot CR is provided.

  An indexer ID for carrying in and out the substrate W is arranged on one end side of the processing areas A and B, and the indexer robot IR is provided inside the indexer ID. The carrier 1 that stores the substrate W is placed on the indexer ID. In the present embodiment, a FOUP (Front Opening Unified Pod) that accommodates the substrate W in a sealed state is used as the carrier 1. However, the present invention is not limited to this, and a SMIF (Standard Mechanical Inter Face) pod is used. OC (Open Cassette) or the like may be used. Details of the carrier 1 will be described later.

  The indexer robot IR with the indexer ID moves in the direction of the arrow U, takes out the substrate W from the carrier 1 and passes it to the substrate transport robot CR, and conversely receives the substrate W subjected to a series of processing from the substrate transport robot CR. Return to carrier 1.

  The substrate transfer robot CR transfers the substrate W delivered from the indexer robot IR to the designated processing unit, or transfers the substrate W received from the processing unit to another processing unit or the indexer robot IR.

  In the present embodiment, after the chemical liquid processing is performed on the substrate W in any of the cleaning processing units 5a to 5d, the substrate W is unloaded from the cleaning processing units 5a to 5d by the substrate transport robot CR, and the indexer robot IR is moved. Via the carrier 1.

  The control unit 4 includes a computer including a CPU (Central Processing Unit) and the like. The operation of each processing unit in the processing areas A and B, the operation of the substrate transfer robot CR in the transfer area C, and the operation of the indexer robot IR of the indexer ID. To control. Details of the control unit 4 will be described later.

  FIG. 2 is a view for explaining the configuration of the cleaning processing units 5a to 5d and the fluid box units 2a to 2d of the substrate processing apparatus 100 according to the embodiment of the present invention.

  2 removes impurities such as organic substances adhering to the surface of the substrate W using the chemical solution supplied from the fluid box portions 2a to 2d (hereinafter referred to as contamination removal processing). A thin oxide film is formed on the surface of the clean substrate W (hereinafter referred to as an ultrathin oxide film formation process).

  As shown in FIG. 2, the cleaning processing units 5 a to 5 d include a spin chuck 21 for holding the substrate W horizontally and rotating the substrate W around a vertical rotation axis passing through the center of the substrate W. The spin chuck 21 is fixed to the upper end of the rotation shaft 25 rotated by the chuck rotation drive mechanism 36.

  The substrate W is rotated while being held horizontally by the spin chuck 21 when the contamination removal process and the ultrathin oxide film formation process are performed.

  A first rotation motor 60 is provided outside the spin chuck 21. A first rotation shaft 61 is connected to the first rotation motor 60. A first arm 62 is connected to the first rotation shaft 61 so as to extend in the horizontal direction, and an oxidation treatment nozzle 50 is provided at the tip of the first arm 62.

  The first rotation shaft 60 is rotated by the first rotation motor 60 and the first arm 62 is rotated, so that the oxidation processing nozzle 50 moves above the substrate W held by the spin chuck 21.

  An oxidation treatment supply pipe 63 is provided so as to pass through the inside of the first rotation motor 60, the first rotation shaft 61 and the first arm 62. The oxidation treatment supply pipe 63 is connected to the oxygen water storage tank R1 and the ozone water storage tank R2 of the fluid box portions 2a to 2d.

  Oxygen water or ozone water is supplied from the fluid box portions 2a to 2d through the oxidation treatment supply pipe 63 to the oxidation treatment nozzles 50 of the cleaning treatment portions 5a to 5d. Thereby, oxygen water or ozone water can be supplied to the surface of the substrate W.

  A second rotation motor 71 is provided outside the spin chuck 21. A second rotation shaft 72 is connected to the second rotation motor 71. A second arm 73 is connected to the second rotating shaft 72 so as to extend in the horizontal direction, and an etching nozzle 70 is provided at the tip of the second arm 73.

  The second rotation shaft 71 is rotated by the second rotation motor 71 and the second arm 73 is rotated, so that the etching nozzle 70 moves above the substrate W held by the spin chuck 21.

  An etching supply pipe 74 is provided so as to pass through the inside of the second rotation motor 71, the second rotation shaft 72, and the second arm 73. The etching supply pipe 74 is connected to the hydrogen fluoride water storage tank R3 of the fluid box portions 2a to 2d.

  Hydrogen fluoride water is supplied from the fluid box portions 2 a to 2 d to the etching nozzles 70 of the cleaning processing portions 5 a to 5 d through the etching supply pipe 74. Thereby, hydrogen fluoride water can be supplied to the surface of the substrate W.

  When supplying oxygen water or ozone water to the surface of the substrate W, the oxidation nozzle 50 is positioned above the substrate, and when supplying hydrogen fluoride water to the surface of the substrate W, the oxidation nozzle 50 is retracted to a predetermined position.

  When supplying oxygen water or ozone water to the surface of the substrate W, the etching nozzle 70 is retracted to a predetermined position, and when supplying hydrogen fluoride water to the surface of the substrate W, the etching nozzle 70 is located above the substrate.

  The spin chuck 21 is accommodated in the processing cup 23. A cylindrical partition wall 33 is provided inside the processing cup 23. Further, a drainage space 31 for draining the processing liquid (oxygen water, ozone water or hydrogen fluoride water) used for processing the substrate W is formed so as to surround the periphery of the spin chuck 21. Further, a recovery liquid space 32 for recovering the processing liquid used for processing the substrate W is formed between the processing cup 23 and the partition wall 33 so as to surround the drainage space 31.

  A drainage pipe 34 is connected to the drainage space 31 to guide the processing liquid to a drainage processing apparatus (not shown), and the processing liquid is supplied to the recovery processing apparatus (not shown) in the recovery liquid space 32. A collection pipe 35 for guiding is connected.

  A guard 24 for preventing the processing liquid from the substrate W from splashing outward is provided above the processing cup 23. The guard 24 has a rotationally symmetric shape with respect to the rotation shaft 25. On the inner surface of the upper end of the guard 24, a drainage guide groove 41 having a square cross section is formed in an annular shape.

  Further, a recovery liquid guide portion 42 having an inclined surface that is inclined outward and downward is formed on the inner surface of the lower end portion of the guard 24. A partition wall storage groove 43 for receiving the partition wall 33 of the processing cup 23 is formed in the vicinity of the upper end of the recovered liquid guide portion 42.

  The guard 24 is provided with a guard raising / lowering drive mechanism (not shown) constituted by a ball screw mechanism or the like. The guard raising / lowering drive mechanism includes a guard 24, a recovery position where the recovery liquid guide 42 is opposed to the outer peripheral end surface of the substrate W held by the spin chuck 21, and the substrate W where the drainage guide groove 41 is held by the spin chuck 21. The liquid is moved up and down with respect to the drainage position facing the outer peripheral end face. When the guard 24 is in the recovery position (the guard position shown in FIG. 2), the processing liquid splashed outward from the substrate W is guided to the recovery liquid space 32 by the recovery liquid guide 42 and recovered through the recovery pipe 35. Is done. On the other hand, when the guard 24 is at the drainage position, the processing liquid splashed outward from the substrate W is guided to the drainage space 31 by the drainage guide groove 41 and drained through the drainage pipe 34. With the above configuration, the processing liquid is drained and collected.

  In the fluid box portions 2a to 2d, an oxygen water storage tank R1, an ozone water storage tank R2, and a hydrogen fluoride water storage tank R3 are provided.

  Oxygen water is supplied to the oxygen water storage tank R1 through a factory oxygen water supply facility (not shown). Thereby, a predetermined amount of oxygen water is stored in the oxygen water storage tank R1. A valve Va is provided at the lower end of the oxygen water storage tank R1.

  Ozone water is supplied to the ozone water storage tank R2 through an ozone water supply facility of a factory (not shown). Thereby, a predetermined amount of ozone water is stored in the ozone water storage tank R2. A valve Va is provided at the lower end of the ozone water storage tank R2.

  Hydrogen fluoride water is supplied to the hydrogen fluoride water storage tank R3 through a hydrogen fluoride water supply facility of a factory (not shown). Thereby, a predetermined amount of hydrogen fluoride water is stored in the hydrogen fluoride water storage tank R3. A valve Va is provided at the lower end of the hydrogen fluoride water storage tank R3.

  Opening and closing of each of the plurality of valves Va is controlled by the control unit 4. Thereby, the oxygen water stored in the oxygen water storage tank R1 and the ozone water stored in the ozone water storage tank R2 are supplied to the oxidation processing nozzle 50 through the oxidation processing supply pipe 63, and the hydrogen fluoride water storage tank R3. The hydrogen fluoride water stored in is supplied to the etching nozzle 70 through the oxidation treatment supply pipe 63.

  In the present embodiment, the oxygen water storage tank R1 and the ozone water storage tank R2 are connected to a common oxidation treatment supply pipe 63, and the oxygen water and ozone water stored in each of them are used as a common oxidation treatment nozzle 50. To the substrate W, a supply system corresponding to each of the oxygen water storage tank R1 and the ozone water storage tank R2 may be provided.

  In this case, for example, each of the oxygen water storage tank R1 and the ozone water storage tank R2 is provided with a supply pipe for supplying oxygen water and ozone water to the cleaning processing units 5a to 5d. In the cleaning processing units 5a to 5d, Two sets of rotary motors, rotary shafts, arms and nozzles are provided corresponding to the two supply pipes.

FIG. 3 is a diagram for explaining the configuration of the carrier 1 of FIG. In the substrate processing apparatus 100 of FIG. 1, the substrate W that has been subjected to the contamination removal process and the ultrathin oxide film formation process is returned to the carrier 1. The inside of the carrier 1 in FIG. 1 is filled with a reducing gas or an inert gas. In this example, N ₂ (nitrogen) gas is used as the inert gas.

  As shown in FIG. 3, the carrier 1 capable of storing a plurality of substrates W is placed on the carrier placement table CD provided in the indexer ID of the substrate processing apparatus 100. In addition, an indexer robot IR is disposed inside the substrate processing apparatus 100 adjacent to the carrier mounting table CD.

Here, an N ₂ gas supply pipe 81 for supplying N ₂ gas into the carrier 1 is provided inside the carrier mounting table CD. The N ₂ gas supply pipe 81 is connected to an N ₂ gas supply source 80 such as a factory N ₂ gas supply facility. The tip of the N ₂ gas supply pipe 81 protrudes from the upper surface side (mounting surface of the carrier 1) of the carrier mounting table CD.

On the other hand, a gas supply mechanism 1 a is provided on a part of the lower surface side of the carrier 1. The gas supply mechanism 1a may be configured by, for example, a hinge 91 and a lid 92. In this case, one end of the lid 92 rotates around the hinge 91 as a central axis, so that the N ₂ gas supply port is opened or closed on the lower surface of the carrier 1.

Here, the tip of the N ₂ gas supply pipe 81 protruding from the carrier mounting table CD is provided so as to come into contact with the gas supply mechanism 1 a when the carrier 1 is mounted. As a result, when the carrier 1 is placed on the carrier placing table CD, the lid 92 of the carrier 1 comes into contact with the tip of the N ₂ gas supply pipe 81 and rotates around the hinge 91 to supply the N ₂ gas supply port. Is established.

As a result, the inside of the carrier 1 in which the plurality of substrates W are accommodated from the N ₂ gas supply pipe 81 is filled with N ₂ gas. Thus, the substrate W that has been subjected to the contamination removal process and the ultrathin oxide film formation process is stored in an N ₂ gas atmosphere.

Incidentally, in the substrate processing apparatus 100 of FIG. 1, the other stores the substrate W after the processing by the configuration of such a carrier 1, a buffer BF, as shown by a chain line in FIG. 1 is provided, N ₂ gas is filled The processed substrate W may be stored in the buffer BF.

  Here, details of the contamination removal process and the ultrathin oxide film formation process will be described. The processing procedure of the decontamination process is as follows.

  First, in the cleaning processing units 5a to 5d in FIG. 2, ozone water is supplied from the oxidation processing nozzle 50 to the surface of the rotating substrate W while being held by the spin chuck 21. As a result, an oxide film is formed on the surface of the substrate W, and impurities (contaminants on the surface of the substrate W) such as organic substances existing on the surface of the substrate W are oxidized.

  Subsequently, hydrogen fluoride water is supplied from the etching nozzle 70 to the surface of the substrate W supplied with ozone water. Thereby, the surface of the substrate W is etched. As a result, impurities such as organic substances oxidized by ozone water are removed together with the oxide film by lift-off. Thereby, a clean substrate W surface can be obtained.

  Such a decontamination process is preferably repeated a plurality of times, such as twice or three times. By repeatedly performing the decontamination treatment, the formation of an oxide film on the surface of the substrate W by ozone water, the oxidation of impurities such as organic substances existing on the surface of the substrate W, the oxide film by oxidized hydrogen fluoride and the oxidized organic matter, etc. The etching of the impurities is repeated, and the cleanliness of the substrate W is further improved.

  On the other hand, the ultrathin oxide film formation process is performed by supplying oxygen water from the oxidation process nozzle 50 to the clean substrate W surface that has been subjected to the contamination removal process. Thereby, a thin oxide film of oxygen water is uniformly formed on the surface of the substrate W.

  Here, since the oxygen water has low oxidizability and the formation rate of the oxide film is slow, the thickness of the oxide film can be easily controlled. Thereby, in this embodiment, an oxide film having a thickness of 5 mm or less (for example, 4 mm) can be easily formed.

In the substrate processing apparatus 100 of FIG. 1, the substrate W that has been subjected to the contamination removal process and the ultrathin oxide film formation process is stored in the carrier 1 of FIG. 3 or the buffer BF of FIG. As a result, since the substrate W on which the uniform and thin oxide film is formed is stored in the N ₂ gas atmosphere, the thin oxide film formed on the substrate is prevented from being thickened by exposure to the atmosphere.

  In the above embodiment, the control unit 4 controls the operations of the indexer robot IR and the substrate transfer robot CR in FIG. 1 and controls the components of the cleaning processing units 5a to 5d and the fluid box units 2a to 2d. .

  In particular, in the cleaning processing units 5a to 5d, the control unit 4 controls operations of the chuck rotation drive mechanism 36, the first rotation motor 60, the second rotation motor 71, the guard lifting / lowering drive mechanism, and the like.

  In the fluid box units 2a to 2d, the control unit 4 controls the opening and closing of the valve Va provided at the lower end of each of the oxygen water storage tank R1, the ozone water storage tank R2, and the hydrogen fluoride water storage tank R3.

  In substrate processing apparatus 100 according to the present embodiment, ozone water stored in ozone water storage tank R2 is supplied to substrate W, whereby an oxide film is formed on the surface of substrate W, and the surface of substrate W Impurities such as organic substances existing in the substrate are oxidized. Further, the surface of the substrate W is etched by supplying the hydrogen fluoride water stored in the hydrogen fluoride water storage tank R3 to the substrate W.

  By performing the contamination removal process in this way, a clean substrate W surface can be obtained. Furthermore, a more clean substrate W surface can be obtained by repeatedly performing the decontamination process a plurality of times.

  In addition, the oxygen water stored in the oxygen water storage tank R1 is supplied to the clean substrate W surface that has been subjected to the decontamination process, so that the substrate W is subjected to the ultrathin oxide film formation process, and the substrate W surface is subjected to the process. A thin oxide film can be formed uniformly.

  As described above, in one embodiment of the present invention, the decontamination process corresponds to the step of supplying an oxidizing treatment liquid to the substrate and the step of supplying an etching liquid to the substrate after the supply of the oxidizing treatment liquid. The formation process corresponds to a step of supplying oxygen water to the substrate after supplying the etching solution.

  Further, the valve Va, the oxidation treatment nozzle 50 and the oxidation treatment supply pipe 63 correspond to an oxidizing treatment liquid supply system, and the valve Va, the etching nozzle 70 and the etching supply pipe 74 correspond to an etching liquid supply system, The valve Va, the oxidation treatment nozzle 50 and the oxidation treatment supply pipe 63 correspond to an oxygen water supply system.

  Further, the ozone water storage tank R2 corresponds to an oxidizing treatment liquid storage means, the hydrogen fluoride water storage tank R3 corresponds to an etching liquid storage means, and the oxygen water storage tank R1 corresponds to an oxygen water storage means.

  The substrate processing method and the substrate processing apparatus according to the present invention can be used for forming an oxide film on a substrate such as a semiconductor wafer, a glass substrate for a photomask, a glass substrate for a liquid crystal display device, and a glass substrate for an optical disk. .

1 is a plan view of a substrate processing apparatus according to an embodiment of the present invention. It is a figure for demonstrating the structure of the washing | cleaning process part and fluid box part of the substrate processing apparatus which concerns on one embodiment of this invention. It is a figure for demonstrating the structure of the carrier of FIG.

Explanation of symbols

50 Oxidation treatment nozzle 63 Oxidation treatment supply pipe 70 Etching nozzle 74 Etching supply pipe 100 Substrate processing apparatus 2a to 2d Fluid box portion 5a to 5d Cleaning treatment portion R1 Oxygen water storage tank R2 Ozone water storage tank R3 Hydrogen fluoride Water storage tank Va valve

Claims (9)

A substrate processing method for performing predetermined processing on a substrate,
Supplying an oxidizing treatment liquid to the substrate;
Supplying an etchant to the substrate after supplying the oxidizing treatment liquid;
And a step of supplying oxygen water to the substrate after supplying the etching solution. The substrate processing method according to claim 1, wherein the supply of the oxidizing treatment liquid to the substrate and the supply of the etching liquid to the substrate are repeated. The substrate processing method according to claim 1, further comprising a step of storing the substrate in an atmosphere of a reducing gas or an inert gas after supplying the oxygen water. The oxidizing treatment liquid is ozone water or hydrogen peroxide water,
The substrate processing method according to claim 1, wherein the etching solution is hydrogen fluoride water. Supplying the oxygen water comprises:
The substrate processing method according to claim 1, wherein an oxide film having a thickness of 5 mm or less is formed on the substrate. A substrate processing apparatus for performing predetermined processing on a substrate,
An oxidizing treatment liquid supply system for supplying the oxidizing treatment liquid to the substrate;
An etching solution supply system for supplying an etching solution to the substrate after the supply of the oxidizing treatment solution by the oxidizing treatment solution supply system;
A substrate processing apparatus, comprising: an oxygen water supply system that supplies oxygen water to the substrate after the etching liquid is supplied by the etching liquid supply system. An oxidizing treatment liquid storage means for storing the oxidizing treatment liquid;
Etching solution storage means for storing the etching solution;
Further comprising oxygen water storage means for storing the oxygen water,
The oxidizing treatment liquid supply system supplies the oxidizing treatment liquid stored by the oxidizing treatment liquid storage means to the substrate,
The etchant supply system supplies the etchant stored by the etchant storage means to the substrate,
The substrate processing apparatus according to claim 6, wherein the oxygen water supply system supplies oxygen water stored by the oxygen water storage unit to the substrate. The oxidizing treatment liquid is ozone water or hydrogen peroxide water,
8. The substrate processing apparatus according to claim 6, wherein the etching solution is hydrogen fluoride water. 9. The substrate processing apparatus according to claim 6, wherein the oxygen water supply system forms an oxide film having a thickness of 5 mm or less by supplying the oxygen water to the substrate.

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