JP2005190992A - Display device and its fabrication method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device and its fabrication technique capable of simplifying a fabrication process and of improving utilization efficiency of materials; and to provide a fabrication technique for improving adhesion of a pattern. <P>SOLUTION: The pattern is formed by using a droplet discharge method. Particularly, a base pretreatment is executed before/after the pattern is formed by using the droplet discharge method. As a result of such a base pretreatment, adhesion of the pattern formed by the droplet discharge method can be improved, and the pattern may be made finer. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a display device including active elements such as transistors formed on a large-area glass substrate and a manufacturing method thereof.

Conventionally, so-called active matrix drive type display panels composed of thin film transistors (hereinafter also referred to as TFTs) on a glass substrate have been manufactured by patterning various thin films by an exposure technique using a photomask. .

In such a display panel, a technique for efficiently mass-producing a plurality of display panels from a single mother glass substrate has been adopted. The size of the mother glass substrate was increased from 300 × 400 mm of the first generation in early 1990 to the fourth generation in 2000 and increased to 680 × 880 mm or 730 × 920 mm. Production technology has progressed so that display panels can be removed.

When the size of the mother glass substrate is small, the patterning process can be performed relatively easily by the exposure apparatus. However, as the size of the mother glass substrate increases, it has become impossible to simultaneously process the entire surface of the mother glass substrate with a single exposure process. As a result, a method has been developed in which a region coated with a photoresist is divided into a plurality of portions, an exposure process is performed for each predetermined block region, and the entire surface of the substrate is repeatedly exposed in order (for example, patents). Reference 1).
Japanese Patent Laid-Open No. 11-326951

However, the size of the mother glass substrate is further increased, and a size of 1000 × 1200 mm or 1100 × 1300 mm in the fifth generation and 1500 × 1800 mm or more in the next generation is assumed. Therefore, it has become difficult to produce a display panel with high productivity and low cost by the conventional patterning method. That is, if the exposure process is performed many times by exposure as in the above-mentioned document, the processing time increases, and it has become necessary to invest a great deal in developing an exposure apparatus corresponding to the increase in the size of the substrate.

In addition, the method of forming various coatings on the entire surface of the substrate and removing the etching while leaving a small area has a problem in that it wastes material costs and requires a large amount of waste liquid to be processed. It was.

In view of the above, an object of the present invention is to provide a display device that can simplify the manufacturing process and improve the utilization efficiency of the material, and a manufacturing technique thereof. It is another object of the present invention to provide a manufacturing technique that improves the adhesion of the pattern.

In view of the above problems, the present invention is characterized in that a pattern is formed using a “method capable of selectively forming a pattern”. In particular, in the present invention, the pattern may be formed by using a method capable of selectively forming a pattern after the base pretreatment. Further, after the pattern is formed by a method capable of selectively forming the pattern, the base pretreatment may be performed. As a result of the base pretreatment, the adhesion of the pattern can be improved.

As the substrate pretreatment, a photocatalytic substance can be formed. Alternatively, a photocatalytic substance may be selectively formed in a region where a pattern is to be formed.

As another base pretreatment, a conductive film such as Ti may be formed by a sputtering method. Similarly to the TiOx film, Ti may be selectively formed in a pattern formation region. Further, oxidation treatment may be performed on Ti to form TiOx on the surface. In addition to TiOx as a T photocatalytic substance, strontium titanate (SrTiO ₃ ), cadmium selenide (CdSe), potassium tantalate (KTaO ₃ ), cadmium sulfide (CdS), zirconium oxide (ZrO ₂ ), niobium oxide (Nb ₂₎ O ₅ ), zinc oxide (ZnO), iron oxide (Fe ₂ O ₃ ), and tungsten oxide (WO ₃ ) may be formed. The photocatalytic substance refers to a substance having a photocatalytic function, and emits light in the ultraviolet region (wavelength of 400 nm or less, preferably 380 nm or less) to cause photocatalytic activity. A fine pattern can be formed by discharging a conductor mixed in a solvent by using a method capable of selectively forming a pattern on such a photocatalytic substance.

As another base pretreatment, an organic film such as a coupling agent may be formed by a coating method or the like. Examples of the coupling agent include a silane coupling agent and a fluorine coupling agent. Similarly to the TiOx film, an organic film may be selectively formed in a pattern formation region.

As a result of such a base pretreatment, the adhesion of the pattern can be improved or the pattern can be miniaturized.

As a method for selectively forming a pattern, a droplet discharge method that selectively discharges droplets (dots) of a composition mixed with a material such as a conductive film or an insulating film (depending on the method, ink jet Can also be used.

As the ink jet method, a piezo method can be used. The piezo method is also used in inkjet printers because of its excellent droplet controllability and high degree of freedom in ink selection. Note that there are two types of piezo methods: MLP (Multi Layer Piezo) type and MLChip (Multi Layer Ceramic Hyper Integrated Piezo Segments) type. Depending on the material of the solvent, an ink jet method using a so-called thermal method in which a heating element generates heat to generate bubbles to push out the solution may be used.

The step of discharging such a composition dot is preferably performed under reduced pressure. The solvent of the composition evaporates between the time when the composition is discharged and the material is landed on the object to be processed, so that the steps of drying and baking the composition can be omitted. Further, it is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor. The step of dropping the composition may be performed in a nitrogen atmosphere or an organic gas atmosphere.

At this time, the composition is ejected in the form of dots or is ejected in the form of columns in which dots are connected. In addition, the fact that the composition is ejected in the form of dots or columns is simply referred to as dripping. That is, since a plurality of dots are ejected continuously, they may not be recognized as dots but may be ejected linearly, but they are collectively referred to as dropping.

As the conductor, gold (Au), silver (Ag), copper (Cu), platinum (Pt), palladium (Pd), tungsten (W), nickel (Ni), tantalum (Ta), bismuth (Bi), Lead (Pb), indium (In), tin (Sn), zinc (Zn), titanium (Ti), or aluminum (Al), alloys made of these, dispersible nanoparticles, or silver halide fine particles Can be used. In particular, low resistance silver or copper may be used. However, in the case of using copper, in order to prevent copper from diffusing into the semiconductor film or the like, an insulating film containing nitrogen or nickel (NiB) subjected to boride treatment is formed as a barrier film.

As the transparent conductive film, indium tin oxide (ITO), IZO (indium zinc oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide, and 2 to 20% oxidation in indium oxide. ITSO mixed with silicon (SiO ₂ ), organic indium, organic tin, titanium nitride (TiN), or the like can also be used.

In order to efficiently disperse the conductor in the composition, the surface of the conductor to be fine particles may be coated with an organic substance or a conductor. The substance covering the surface may have a laminated structure. The substance covering the surface is preferably conductive, but it may be removed by heat treatment or the like even if it does not have conductivity but has insulation.

For example, as shown in FIG. 24A, even when the dots are dripped from a nozzle and the surface of Cu 301 is coated with a conductive material 302 such as nickel (Ni) or boronized nickel (NiB). Good. For example, as shown in FIG. 24B, the surface of Cu 301 is coated with a conductive material 302 such as nickel (Ni) or borated nickel (NiB), and the surface of Ni or NiB is further coated with Ag 303. May be. As a result, thermal diffusion of Cu due to heating or the like can be prevented.

Such selectively formed patterns include gate electrodes, source electrodes and drain electrodes, electrodes such as pixel electrodes, wirings such as source wirings and drain wirings, masks for patterning semiconductor films, semiconductor films, and the like. .

In the present invention, the pattern may be formed using a method capable of selectively forming a pattern in at least one of the pattern forming steps necessary for manufacturing the display device. This is because, by using a method capable of selectively forming a pattern in one step of the pattern forming step, effects such as simplification of the manufacturing step and improvement of material utilization efficiency can be achieved.

In addition, the display device of the present invention includes a light-emitting element, a TFT, and a medium including an organic substance that emits light called electroluminescence (hereinafter also referred to as “EL”) or a mixture of an organic substance and an inorganic substance interposed between electrodes. Is a connected display device. The above object is achieved by forming such a display device using a droplet discharge method.

As described above, the present invention is characterized in that a pattern is formed by a droplet discharge method and adhesion of the pattern is improved, and the structure of the thin film transistor is not limited. That is, it may be a thin film transistor having either a crystalline semiconductor film or an amorphous semiconductor film, a so-called bottom gate type in which a gate electrode is provided below the semiconductor film, and a so-called gate electrode provided above the semiconductor film. A thin film transistor having any structure of a top gate type may be used.

In addition, in any of the gate electrode, the source electrode, the drain electrode, and the wiring connected to the electrodes included in the thin film transistor, adhesion can be improved by performing a base pretreatment when the droplet discharge method is used. it can.

By using the droplet discharge method, a transistor or the like can be formed on a large mother glass substrate of the fifth generation or later so as to simplify the manufacturing process and improve the material utilization efficiency. When a wiring or the like is formed by a droplet discharge method, the photo process can be simplified. As a result, a photomask becomes unnecessary, and it is possible to achieve a reduction in capital investment cost and a reduction in cost. Furthermore, since a photolithography process is unnecessary, manufacturing time can be shortened.

Further, when a mask or the like is formed by a droplet discharge method, the utilization efficiency of the material is improved, and the cost and the amount of waste liquid can be reduced. As described above, it is preferable to apply the droplet discharge method to a large mother glass substrate. In addition, a large number of display panels can be manufactured from the mother glass substrate, and the price of the display device can be expected to decrease.

As described above, even in a large mother glass substrate of the fifth generation or later, a production line capable of maintaining profitability can be constructed by using the droplet discharge method.

In the present invention, adhesiveness can be improved by performing a base pretreatment before and after forming a pattern by a droplet discharge method.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

In the following embodiments, an ink jet method is used as a droplet discharge method, a TiOx film is used as a photocatalyst material for a base pretreatment, and Ag is used as a material for a gate electrode, a source electrode, and a drain electrode. .

It should be noted that the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. It should not be construed as being limited to the following embodiments.

A TFT has three terminals, a gate, a source, and a drain. However, the source terminal (source electrode) and the drain terminal (drain electrode) cannot be clearly distinguished because of the structure of the transistor. Therefore, when describing connection between elements, one of a source electrode and a drain electrode can be referred to as a first electrode, and the other as a second electrode.

(Embodiment 1)
In this embodiment, an example of a method for manufacturing the first and second thin film transistors will be described.

First, as shown in FIG. 1A, a substrate 100 having an insulating surface is prepared. As the substrate 100, for example, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a stainless steel substrate, a bulk semiconductor film, or the like can be used. In addition, substrates made of plastics typified by polyethylene-terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and flexible synthetic resins such as acrylic are generally Although the heat resistant temperature tends to be lower than that of the substrate, it can be used as long as it can withstand the processing temperature in the manufacturing process. In particular, when a thin film transistor including an amorphous semiconductor film that does not require a heating step for crystallizing a semiconductor film is formed, a substrate made of a synthetic resin having flexibility is easily used.

In order to improve the flatness of the substrate, it is preferable to use after polishing the surface by CMP (Chemical-Mechanical Polishing), so-called chemical or mechanical polishing. As the CMP abrasive (slurry), for example, fumed silica particles obtained by thermally decomposing silicon chloride gas dispersed in a KOH-added aqueous solution can be used.

A base film may be formed on the substrate 100 as necessary. The base film is provided in order to prevent alkali metal such as Na or alkaline earth metal contained in the substrate from diffusing into the semiconductor film and adversely affecting the characteristics of the semiconductor element. Therefore, the base film can be formed using an insulating film such as silicon oxide, silicon nitride, silicon nitride oxide, titanium oxide, or titanium nitride that can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film. . Alternatively, the base film can be formed using a conductive film such as titanium. In this case, the conductive film may be oxidized by heat treatment or the like in the manufacturing process. In particular, the material of the base film is preferably selected from materials having high adhesion to the gate electrode material. For example, when Ag is used for the gate electrode, it is preferable to form a base film made of titanium oxide (TiOx). Note that the base film may have a single-layer structure or a stacked structure.

The base film is not necessarily provided as long as impurities can be prevented from diffusing into the semiconductor film. Therefore, as in this embodiment, when a semiconductor film is formed over a gate electrode through a gate insulating film, the gate insulating film can function to prevent diffusion of impurities into the semiconductor film. There is no need to provide it. Further, it may be preferable to provide a base film with a substrate material. In the case of using a substrate containing an alkali metal or an alkaline earth metal, such as a glass substrate, a stainless steel substrate, or a plastic substrate, it is effective to provide a base film from the viewpoint of preventing impurity diffusion. On the other hand, in the case where diffusion of impurities does not cause any problem such as a quartz substrate, it is not always necessary to provide a base film.

After that, a photocatalytic substance 101 is formed over the entire surface in order to perform base pretreatment for forming a conductive film functioning as a gate electrode (hereinafter referred to as a gate electrode) over the substrate. The photocatalytic substance is a dip-gel method using a sol-gel method, a spin coating method, an inkjet method, an ion plating method, an ion beam method, a CVD method, a sputtering method, an RF magnetron sputtering method, a plasma spraying method, a plasma spraying method, or an anode. It can be formed by an oxidation method. In the case of a photocatalytic substance composed of an oxide semiconductor containing a plurality of metals, it can be formed by mixing and melting the salts of constituent elements. When the photocatalytic substance is formed by a coating method such as a dip coating method or a spin coating method, and it is necessary to remove the solvent, it may be heated for baking or drying. Specifically, heating is performed at a predetermined temperature (for example, about 150 to 500 ° C.).

In this embodiment, a TiOx film as a photocatalytic substance is formed on the entire surface by a coating method using a sol-gel solution. In addition, TiOx may have crystallinity called rutile type (goldenite), anatase type (sharpstone), brookite type (plate titanium stone), or may have amorphousness. Thereafter, heating is performed at 150 ° C. for 10 minutes. In addition, you may heat at 250-500 degreeC in the range of 1 hour.

By forming the TiOx film, the adhesion of the gate electrode can be improved.

Alternatively, TiOx may be selectively formed in the region where the gate electrode is formed. In this case, a region having high adhesion with the gate electrode is selectively formed, and the gate electrode can be miniaturized. As a means for selectively forming TiOx, after forming TiOx on the entire surface, unnecessary regions may be removed by wet etching or dry etching. Alternatively, after TiOx is formed on the entire surface, it may be activated by selectively irradiating light or the like to selectively enhance the adhesion with the gate electrode.

As another base pretreatment, a conductive film such as Ti may be formed by a sputtering method. As a result, the adhesion of the gate electrode can be improved and the gate electrode can be miniaturized. Similarly to the TiOx film, Ti may be selectively formed in the region where the gate electrode is formed. Further, oxidation treatment may be performed on Ti to form TiOx on the surface.

As another base pretreatment, an organic film such as a coupling agent may be formed by an inkjet method or the like. Examples of the coupling agent include a silane coupling agent and a fluorine coupling agent. As a result, the adhesion of the gate electrode can be improved and the gate electrode can be miniaturized. Similarly to the TiOx film, an organic film may be selectively formed in a region where the gate electrode is formed.

As described above, the film formed as the base pretreatment can also function as the base film. That is, a TiOx film can be formed as the base film and the photocatalytic substance.

Further, as another base pretreatment, plasma treatment may be performed on the gate electrode formation surface. The plasma treatment is performed using air, oxygen, or nitrogen as a treatment gas, and the pressure is several tens of Torr to 1000 Torr (133000 Pa), preferably 100 (13300 Pa) to 1000 Torr (133000 Pa), more preferably 700 Torr (93100 Pa) to 800 Torr ( 106400 Pa), that is, a pulse voltage is applied in a state where the pressure becomes atmospheric pressure or a pressure near atmospheric pressure. At this time, the plasma density is set to 1 × 10 ¹⁰ to 1 × 10 ¹⁴ m ⁻³ , so-called corona discharge or glow discharge. The plasma treatment may be performed in a non-contact manner with respect to the formation surface of the gate electrode. As a result, the adhesion of the gate electrode can be improved and the gate electrode can be miniaturized. Similarly to the TiOx film, plasma treatment may be selectively performed on the region where the gate electrode is formed.

Next, by using an ink jet method, dots mixed with a conductor in a solvent are dropped to form the gate electrode 103 in the first thin film transistor formation region 11 and the second thin film transistor formation region 12. In this embodiment, a dot in which a silver (Ag) conductor is dispersed in a tetradecane solvent is dropped. At this time, dots are dropped from the nozzle 104 of the ink jet apparatus on the region where the gate electrode is formed. In this manner, dots are dropped from the nozzles to form the gate electrode.

Then, when it is necessary to remove the solvent of a dot, it heat-processes in order to bake or to dry. Specifically, heating may be performed at a predetermined temperature, for example, 200 ° C. to 300 ° C., and heat treatment is preferably performed in an atmosphere containing oxygen. At this time, the heating temperature is set so that the gate electrode surface is not uneven. When using dots containing silver (Ag) as in this embodiment, heat treatment is performed in an atmosphere containing oxygen and nitrogen. For example, the oxygen composition ratio is set to 10 to 25%. Then, since organic substances, such as thermosetting resins, such as an adhesive agent contained in the solvent of dots, are decomposed, silver (Ag) that does not contain organic substances can be obtained. As a result, the flatness of the gate electrode surface can be improved and the specific resistance value can be lowered. By this heat treatment, Ti formed as the base pretreatment may be oxidized.

In addition to silver (Ag), an element selected from tantalum, tungsten, titanium, gold, molybdenum, aluminum, and copper (Cu), or an alloy material or a compound material containing the element as a main component can be given as a material for the gate electrode. It is done. The conductive film can be formed by a sputtering method or a plasma CVD method in addition to the ink jet method. As a conductive film formed by a sputtering method or a plasma CVD method, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy can be used.

The gate electrode may have a single layer structure or a stacked structure. For example, a dot containing Ag may be dropped as an underlayer conductive film by an inkjet method, and Cu may be formed as an upper layer conductive film by an inkjet method or a sputtering method. By forming a low resistance material such as Cu, it is possible to reduce wiring resistance, and to prevent heat generation and signal delay associated with wiring resistance. In addition, a base pretreatment may be performed on the lower conductive film to form an upper conductive film. As a result, the adhesion between the lower conductive film formed by the inkjet method and the upper conductive film can be improved.

Alternatively, a plating method may be used as a means for forming a gate electrode having a stacked structure. For example, the second conductive film may be formed around the first conductive film formed by an inkjet method by an electroplating method or an electroless plating method. Specifically, Cu can be formed around Ag formed by an ink-jet method by electroplating. Further, an electroless plating process that does not require a current to flow may be performed, and Cu may be formed around Ag formed by the inkjet method. As a result, wiring resistance can be reduced, and heat generation and signal delay associated with wiring resistance can be prevented. In particular, when the first conductive film is formed to be fine, it is preferable because the wiring resistance can be reduced by the second conductive film. When a highly diffusible conductor such as Cu is formed, a barrier film may be formed so as to cover Cu in order to prevent diffusion. As the barrier film, silicon nitride, silicon oxide, or boron-treated nickel (NiB) can be used.

At this time, the plating process can be performed by immersing the substrate in an aqueous solution in which a metal is dissolved. When a large mother glass substrate is used, the plating process can be performed by flowing an aqueous solution in which a metal is dissolved over the substrate. In this case, it is possible to prevent the apparatus for performing the plating process from being enlarged.

Thus, in this embodiment mode, it is preferable to perform base pretreatment before forming a conductive film, particularly a conductive film by an inkjet method.

Further, an insulating film or a conductive film may be formed so as to cover the gate electrode. Silicon nitride or silicon oxide can be used as the insulating film, and boride-treated nickel (NiB) can be used as the conductive film. As a result, oxidation of the gate electrode can be prevented, and planarization of the surface can be improved.

As shown in FIG. 1B, an insulating film functioning as the gate insulating film 105 (hereinafter also referred to as a gate insulating film) is formed so as to cover the gate electrode. As the gate insulating film, an insulator such as silicon oxide, silicon nitride, or silicon nitride oxide can be formed by a plasma CVD method or a sputtering method. Note that the gate insulating film may be formed by discharging dots mixed with an insulating film material such as polyimide by an inkjet method. When Ag is used as a gate electrode as in this embodiment mode, it is preferable to use a silicon nitride film as an insulating film in contact with Ag as a gate insulating film. This is because when an insulating film containing oxygen is used, it reacts with Ag, silver oxide is formed, and the gate electrode surface may be roughened.

The gate insulating film can have a single-layer structure or a stacked structure. For example, a gate insulating film in which silicon nitride, silicon oxide, and silicon nitride are stacked in this order can be formed. In order to improve the adhesion between the gate electrode and the gate insulating film, the gate insulating film may be formed after the base pretreatment. For example, a TiOx film and a gate insulating film may be stacked in this order on the gate electrode. At this time, TiOx also functions as an insulating film.

Thus, in this embodiment mode, it is preferable to perform base pretreatment after a conductive film, particularly a conductive film is formed by an ink-jet method.

Next, the semiconductor film 106 is formed over the gate insulating film. The semiconductor film can be formed by a plasma CVD method, a sputtering method, an ink jet method, or the like. The thickness of the semiconductor film is preferably 25 to 200 nm (preferably 30 to 60 nm). As a material for the semiconductor film, not only silicon but also silicon germanium can be used. When silicon germanium is used, the concentration of germanium is preferably about 0.01 to 4.5 atomic%.

The semiconductor film includes an amorphous semiconductor, a semi-amorphous semiconductor in which crystal grains are dispersed in the amorphous semiconductor, and crystal grains of 0.5 nm to 20 nm in the amorphous semiconductor. It may have any state selected from a microcrystalline semiconductor, an organic semiconductor, and a crystalline semiconductor that can be observed. In particular, a microcrystalline state in which crystal grains of 0.5 nm to 20 nm can be observed is called a so-called microcrystal (μc).

Semi-amorphous silicon (also referred to as SAS) using silicon as a semi-amorphous semiconductor material can be obtained by glow discharge decomposition of a silicide gas. The SAS may be formed using fluorine (F ₂ ) in addition to the silicide gas. A typical silicide gas is SiH ₄ , and in addition, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like can be used. The formation of the SAS can be facilitated by diluting the silicide gas with one or more kinds of rare gas elements selected from hydrogen, hydrogen and helium, argon, krypton, and neon. At this time, it is preferable to dilute the silicide gas so that the dilution rate is in the range of 10 to 1000 times. The SAS can be formed by using Si ₂ H ₆ and GeF ₄ and diluting with helium gas.

The reaction generation of the coating by glow discharge decomposition is preferably performed under reduced pressure, and the pressure may be in the range of about 0.1 Pa to 133 Pa. The power for forming the glow discharge may be high frequency power of 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. The substrate heating temperature is preferably 300 ° C. or less, and a substrate heating temperature of 100 to 250 ° C. is recommended.

Further, an amorphous silicon film (also referred to as amorphous silicon or AS) using silicon as an amorphous semiconductor material can be formed using a silicide gas. A typical silicide gas is SiH ₄ , and in addition, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like can be used. The silicide gas is preferably diluted with one or more kinds of rare gas elements selected from hydrogen, hydrogen and helium, argon, krypton, and neon. In this embodiment, an amorphous silicon film is formed as the semiconductor film by a plasma CVD method.

Such SAS and AS can take a single layer structure or a laminated structure. In the case of a laminated structure, the film can be continuously formed without being exposed to the atmosphere by changing the type and flow rate of the film forming gas. For example, a SAS having a stacked structure can be formed by forming a silicide gas and a fluorine-based gas and then changing the fluorine-based gas to a hydrogen-based gas.

After that, an insulating film (hereinafter referred to as a channel protective film) 108 that functions as a channel protective film is formed over the semiconductor film. As a material for the channel protective film, an organic material or an inorganic material can be used. As the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, siloxane, or polysilazane can be used. Siloxane has a skeletal structure composed of a bond of silicon (Si) and oxygen (O), and the substituent contains at least hydrogen, or the substituent has at least one of fluorine, an alkyl group, and an aromatic hydrocarbon. A polymeric material having a starting material. Polysilazane is formed using a liquid material containing a polymer material having a bond of silicon (Si) and nitrogen (N) as a starting material. As the inorganic material, silicon oxide or silicon nitride can be used.

As a method for manufacturing the channel protective film, an inkjet method or a plasma CVD method can be used. In the case of using an ink jet method, a channel protective film can be selectively formed over a semiconductor film. Further, when the plasma CVD method is used, it is necessary to etch the channel protective film. At this time, a mask may be formed over the channel protective film, and the channel protective film may be etched using the mask. For example, the mask can be formed on the channel protective film by backside exposure using the gate electrode as a mask, or the mask can be selectively formed on the channel protective film by an inkjet method.

Next, a semiconductor film having one conductivity type is formed. The semiconductor film having one conductivity type can be formed by a plasma CVD method, a sputtering method, an ink jet method, or the like. In the case where a semiconductor film having one conductivity type is provided, the contact resistance between the semiconductor film and the electrode is preferably reduced, but it is not necessarily provided. In this embodiment, the N-type semiconductor film 109 is formed by a plasma CVD method.

As shown in FIG. 1C, a mask 111 for patterning the semiconductor film 106 and the N-type semiconductor film 109 into a desired shape is formed. The mask is preferably formed by an ink jet method because it improves material utilization efficiency, reduces costs, and reduces the amount of waste liquid, but may be formed by a photolithography method. Further, when a mask is formed by an inkjet method, the photolithography process can be simplified. That is, photomask formation, exposure, and the like are not required, a reduction in equipment investment cost can be achieved, and manufacturing time can be reduced. In this embodiment mode, a mask is formed by an inkjet method. Therefore, a dot containing a mask material is dropped from the nozzle 104 on the area where the mask is to be formed.

Inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.) and photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, polyvinyl alcohol, resist or benzocyclobutene) are used as mask materials. Can do. For example, in the case where a mask is formed using an inkjet method using polyimide, heat treatment may be performed at 150 to 300 ° C. for firing after discharging polyimide to a desired portion by an inkjet method.

As shown in FIG. 1D, the semiconductor film 106 and the n-type semiconductor film 109 are etched by dry etching or wet etching using a mask. After etching, plasma treatment or the like is performed to remove the mask. Note that the mask may function as an insulating film without being removed.

As shown in FIG. 2A, a conductive film functioning as a source electrode and a drain electrode (hereinafter referred to as a source electrode and a drain electrode) is formed. As the conductive film, a film made of gold, silver, copper, aluminum, titanium, molybdenum, tungsten, or silicon or an alloy film using these elements can be used. The conductive film can be formed using any one of an inkjet method, a CVD method, and a sputtering method. In this embodiment, a dot in which a conductor is mixed in a solvent is dropped by an inkjet method, so that the source and drain electrodes 115 are formed. Specifically, it may be performed similarly to the gate electrode shown in FIG. 1A, and a dot in which a silver (Ag) conductor is dispersed in a tetradecane solvent is dropped. At this time, dots are dropped from a nozzle 104 on a region where a source electrode and a drain electrode are to be formed so as to be drawn in a desired region. Similarly to the gate electrode, the source electrode and the drain electrode may have either a single layer structure or a stacked structure.

In the case where Ag is used as a source electrode and a drain electrode as in this embodiment mode, a silicon nitride film is preferably formed as an insulating film functioning as a protective film. As a result, film roughness on the gate electrode surface can be prevented.

In addition, base pretreatment may be performed before and after the conductive film functioning as the source electrode and the drain electrode is formed. As a result, the adhesion between the source electrode and the drain electrode can be improved. For example, a TiOx film or a Ti film can be thinly formed on an n-type semiconductor film, and a source electrode and a drain electrode can be formed by an inkjet method.

After that, when it is necessary to remove the solvent of the dots, heat treatment is performed for baking or drying in the same manner as the gate electrode. In the case where a dot containing silver (Ag) is used as in this embodiment mode, heat treatment may be performed in an atmosphere containing oxygen and nitrogen. For example, the oxygen composition ratio is set to 10 to 25%.

Further, the above-described plating treatment may be performed on the source electrode or the drain electrode.

As shown in FIG. 2B, the n-type semiconductor film 109 is etched using the source and drain electrodes as masks. This is for preventing the source electrode and the drain electrode from being short-circuited by the n-type semiconductor film. At this time, the channel protective film may be slightly etched. In this manner, active elements that function as the first and second thin film transistors are completed.

Next, in order to connect the source electrode or the drain electrode of the first thin film transistor and the gate electrode of the second thin film transistor, a contact hole is formed in the gate insulating film by dry etching or wet etching. At this time, a mask (not shown) can be formed, and a contact hole can be formed in the gate insulating film using the mask. The mask can be formed by an inkjet method or a photolithography method. A contact hole may be formed in the gate insulating film using the source electrode and the drain electrode as a mask. In this case, the gate insulating film is removed in a region where the source electrode and the drain electrode are not provided.

After that, a conductive film 116 for connecting the source electrode or the drain electrode of the first thin film transistor and the gate electrode of the second thin film transistor is formed in the contact hole. As the conductive film, a film made of gold, silver, copper, aluminum, titanium, molybdenum, tungsten, or silicon or an alloy film using these elements can be used. In this embodiment, the conductive film is formed by an inkjet method. Therefore, dots containing a conductive film material are dropped from the nozzle 104 on the region where the conductive film is formed.

In the case where a contact hole is formed in the gate insulating film after the semiconductor film and the n-type semiconductor film are patterned as described above, and then the source electrode and the drain electrode are formed, the conductive film 116 is a part of the source electrode and the drain electrode. Can be formed as

Note that before the gate insulating film is formed, a conductive film may be formed in a column shape in order to connect the source electrode or the drain electrode of the first thin film transistor and the gate electrode of the second thin film transistor. After the gate insulating film is formed, the gate insulating film is etched back so that the end of the columnar conductive film is exposed. Then, the source electrode or the drain electrode of the first thin film transistor and the gate electrode of the second thin film transistor can be connected through the columnar conductive film. In this case, it is not necessary to form a contact hole in the gate insulating film.

As described above, the thin film transistor provided with the source electrode and the drain electrode is completed. The thin film transistor in this embodiment is a so-called bottom gate thin film transistor in which a gate electrode is provided below a semiconductor film. More specifically, it is a so-called channel protection type in which a channel protection film is provided. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

As shown in FIG. 2C, a columnar conductive film 117 is formed over the source electrode or the drain electrode of the second thin film transistor. As the columnar conductive film, a film made of gold, silver, copper, aluminum, titanium, molybdenum, tungsten, or silicon, or an alloy film using these elements can be used. The columnar conductive film can be formed using any one of an inkjet method, a CVD method, and a sputtering method. In this embodiment mode, a columnar conductive film is formed by an inkjet method. In the case of forming by an inkjet method, dots are dropped from a nozzle 104 on a region where a conductive film is formed. At this time, in order to make the columnar conductive film have a desired height, the dots may be dropped several times. Further, heat treatment is preferably performed every time a dot is dropped. Since the conductive film is fired by heat treatment and has an appropriate hardness, a columnar conductive film can be easily formed. However, if the viscosity of the dots having the conductive film is a desired value, the columnar conductive film can be formed by dropping the dots once or a small number of times.

As shown in FIG. 2D, an insulating film (hereinafter referred to as an interlayer insulating film) 118 is formed. As a material for the interlayer insulating film, an organic material or an inorganic material can be used. As the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, siloxane, or polysilazane can be used. As the inorganic material, silicon oxide or silicon nitride can be used. The interlayer insulating film can be formed by a spin coating method, a dip coating method, a plasma CVD method, or an ink jet method. If the size of the mother glass substrate is increased, it may be difficult to use the spin coating method. Therefore, the large mother glass substrate is installed at an angle, and a solvent having an interlayer insulating film material is dropped from the upper end of the substrate. A method may be used. It is preferable to form an interlayer insulating film because the flatness can be improved.

Further, in order to improve the adhesion between the source electrode and the drain electrode and the interlayer insulating film, a base pretreatment may be performed after the formation of the source electrode and the drain electrode.

After that, a pixel electrode 119 is formed so as to be connected to the columnar conductive film 117. Therefore, the interlayer insulating film is etched back as necessary to expose the tip of the columnar conductive film. The pixel electrode can be formed by a sputtering method or an inkjet method. The pixel electrode can be formed using a light-transmitting material or a non-light-transmitting material. For example, ITO or the like can be used when it has translucency, and a metal film can be used when it has non-translucency. As specific pixel electrode materials, indium tin oxide (ITO), IZO (indium zinc oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide, 2 to 20 in indium oxide. It is also possible to use ITO-SiOx (referred to as ITSO or NITO for convenience), organic indium, organic tin, titanium nitride (TiN), or the like mixed with% silicon oxide (SiO ₂ ). In this embodiment mode, a pixel electrode is formed using NITO by a sputtering method. Note that in the case where NITO is used for the pixel electrode, it is preferable to form the NITO after forming the silicon nitride film over the interlayer insulating film.

Next, an insulating film 120 functioning as a partition or bank is formed so as to cover the end portion of the pixel electrode 119. For the insulating film, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, etc.), photosensitive or non-photosensitive organic materials (polyimide, acrylic, polyamide, polyimide amide, resist or benzocyclobutene), siloxane, polysilazane, And a stacked structure thereof can be used. As the organic material, a positive photosensitive organic resin or a negative photosensitive organic resin can be used. For example, in the case where positive photosensitive acrylic is used as the organic material, an opening having a curvature can be formed at the upper end when the photosensitive organic resin is etched by an exposure process. Therefore, disconnection of an electroluminescent layer or the like to be formed later can be prevented. The TFT substrate in this state is referred to as a module TFT substrate.

FIG. 22 shows a cross-sectional view in the case where the gate electrode is formed in a laminated structure by using a plating method. A conductive film 102 made of copper is formed around the gate electrode 103 by plating. The other structures are the same as those in FIG.

In addition, a conductive film made of copper can be formed around the source electrode or the drain electrode.

FIG. 23 shows a state in which electroplating is performed, and a case of performing multi-chamfering to obtain four panels from a large mother glass substrate will be described.

As shown in FIG. 23A, a conductive film 180 for supplying current is formed on the substrate 100 by drawing Ag on the same layer as the gate electrode 103, for example, by an inkjet method. The conductive film 180 may be formed of a material different from that of the gate electrode, or may be formed of Cu that is to be formed by electrolytic plating. At this time, Cu may be formed also on the gate electrode made of Ag. As a result, Cu can be uniformly formed by plating.

As shown in FIG. 23B, the substrate 100 is fixed to a stage 184, a head 181 for dropping a metal-dissolved aqueous solution onto the substrate, and a head for washing the metal-dissolved aqueous solution with water. 182 and a head 183 for ejecting gas for drying are arranged in order. By arranging a plurality of nozzles in this way, continuous processing can be performed and throughput can be increased. When Cu is formed by electroplating, a solution composed of copper sulfate and dilute sulfuric acid can be used as an aqueous solution in which a metal is dissolved. As a gas for drying, oxygen, nitrogen, or a mixture thereof can be used. Further, warm air may be blown out to accelerate drying.

In this state, the substrate 100 can be moved in the direction of the arrow, and electroplating can be performed on the large mother glass substrate. Of course, the substrate 100 and the heads 181, 182, and 183 may be moved relatively.

At this time, as shown in FIG. 23C, the substrate 100 is fixed to the stage 184 and disposed obliquely so as to have an angle θ. The angle θ can be in the range of 0 ° <θ <90 °, preferably 45 ° <θ <80 °. Further, the angle θ is 90 ° <θ <120 °, and the aqueous solution from the head 181 can be ejected by increasing the pressure. Similarly, the water is washed from the head 182 and the gas from the head 183 is ejected by increasing the pressure. In this case, since the aqueous solution falls without dropping on the substrate 100, unevenness of the aqueous solution can be prevented. In this way, by arranging the substrate diagonally, it is possible to prevent the plating apparatus from increasing in size as the mother glass substrate increases.

The stage 184 includes a conductor and an insulator 185, and one conductor is an anode and the other conductor is a cathode, and is connected to a conductive film 180 formed on the substrate 100. Plating can be performed by passing current through them. Needless to say, a conductor and an insulator may be provided on the stage 184.

Note that unlike the present embodiment, the plating process may be performed by immersing the substrate 100 in an aqueous solution in which a metal is dissolved.

Alternatively, the conductive film 102 may be formed around the gate electrode by an electroless plating method in which no current flows due to the reducing action of metal ions in the solution. In this case, the conductive film 180 for flowing current is not formed.

In addition, the thin film transistor described in this embodiment is characterized in that a conductive film or a mask other than a conductive film is formed by at least an inkjet method. Therefore, if an inkjet method is used for one step of forming a conductive film or a mask other than the conductive film, a step other than the inkjet method may be used for forming the other conductive film. If the ink jet method is used in one process, the material utilization efficiency is improved, and the cost and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

As described above, a thin film transistor having a miniaturized gate electrode, source electrode, and drain electrode can be obtained by the base pretreatment. In addition, when the pre-treatment is selectively performed, wiring can be formed along the pre-treatment region even when dots are ejected with a slight shift, and accurate position control of wiring formation is possible. Become.

(Embodiment 2)
In this embodiment, an example in which the first and second thin film transistors are manufactured by a method different from that in the above embodiment will be described. Specifically, the method of forming the contact hole provided in the interlayer insulating film is different, and the other configurations are the same as those in the above embodiment, so that the description thereof is omitted.

As shown in FIG. 3A, first and second thin film transistors are formed as in the above embodiment. In this embodiment, the interlayer insulating film 118 is formed so as to cover the first and second thin film transistors without forming the columnar conductive film.

Thereafter, a mask is formed on the interlayer insulating film. The mask can be formed by an inkjet method or a photolithography method. In this embodiment mode, a mask is formed by an inkjet method. When a mask is formed by an inkjet method, the photolithography process can be simplified. That is, photomask formation, exposure, and the like are not required, a reduction in equipment investment cost can be achieved, and a manufacturing time can be shortened.
At this time, dots having a mask material are dropped from the nozzle 104 on the area where the mask is formed.

Thereafter, using the mask, a contact hole 122 is formed in the interlayer insulating film by a dry etching method. The contact hole is formed in a region connected to the source electrode or the drain electrode of the second thin film transistor.

As shown in FIG. 3B, a columnar conductive film 123 is formed in the contact hole. As the columnar conductive film, a film made of gold, silver, copper, aluminum, titanium, molybdenum, tungsten, or silicon, or an alloy film using these elements can be used. The columnar conductive film can be formed using any one of an inkjet method, a CVD method, and a sputtering method. In this embodiment mode, a columnar conductive film is formed by an inkjet method. In the case of forming by an inkjet method, dots are dropped from a nozzle 104 on a region where a conductive film is formed. At this time, in order to make the columnar conductive film have a desired height, the dots may be dropped several times. Further, in this embodiment mode, since the contact hole is protected by the side wall, it is not necessary to perform the heat treatment every time a dot is dropped.

As shown in FIG. 3C, a pixel electrode 119 is formed so as to be connected to a columnar conductive film as in the above embodiment mode. After that, an insulating film 120 that functions as a bank or a partition is formed so as to cover the end portion of the pixel electrode. In this way, a module TFT substrate can be formed.

In addition, the thin film transistor described in this embodiment is characterized in that a conductive film or a mask other than a conductive film is formed by at least an inkjet method. Therefore, if an inkjet method is used for one step of forming a conductive film or a mask other than the conductive film, a step other than the inkjet method may be used for forming the other conductive film. If the ink jet method is used in one process, the material utilization efficiency is improved, and the cost and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

As described above, a thin film transistor having a miniaturized gate electrode, source electrode, and drain electrode can be obtained by the base pretreatment. In addition, when the pre-treatment is selectively performed, wiring can be formed along the pre-treatment region even when dots are ejected with a slight shift, and accurate position control of wiring formation is possible. Become.

(Embodiment 3)
In this embodiment, an example in which the first and second thin film transistors are manufactured by a method different from that in the above embodiment will be described. Specifically, the formation method of the interlayer insulating film is different, and the other configurations are the same as those in the above embodiment, so that the description thereof is omitted.

As shown in FIG. 4A, as in the above embodiment, first and second thin film transistors are formed, and an interlayer insulating film is formed so as to cover the thin film transistors. In this embodiment, an interlayer insulating film is formed by an inkjet method. Then, in the source electrode or drain electrode of the second thin film transistor, the interlayer insulating film 125 is not formed over the electrode connected to the pixel electrode. At this time, dots having an insulating film material are dropped from the nozzle 104 on the region where the interlayer insulating film is formed. By setting the viscosity of the dots, it is possible to form an interlayer insulating film as shown in FIG. As a result, there is no need to form a contact hole for connecting the pixel electrode to the interlayer insulating film.

As shown in FIG. 4B, the pixel electrode 119 can be formed in the opening 126 of the interlayer insulating film. The pixel electrode can be formed by a sputtering method or an inkjet method. The pixel electrode can be formed using a light-transmitting material or a non-light-transmitting material. For example, ITO or the like can be used when it has translucency, and a metal film can be used when it has non-translucency. As specific pixel electrode materials, indium tin oxide (ITO), IZO (indium zinc oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide, and 2 to 20 in indium oxide. It is also possible to use ITO-SiOx (referred to as ITSO or NITO for convenience), organic indium, organic tin, titanium nitride (TiN), etc. mixed with 1% silicon oxide (SiO ₂ ). In this embodiment mode, a pixel electrode 119 is formed by dropping a dot having a transparent conductive film material from the nozzle 104.

As shown in FIG. 4C, the insulating film 120 functions as a bank or a partition so as to cover an end portion of the pixel electrode and a pixel electrode (also referred to as a part of the pixel electrode) over the opening region. Form. At this time, the insulating film 120 is formed to cover the pixel electrode outside the flat region so that the pixel electrode provided in the flat region is exposed. As a result, the disconnection of the electroluminescent layer to be formed later can be prevented. Alternatively, the electroluminescent layer may be formed in a state of being provided in the opening of the interlayer insulating film without forming the insulating film 120. In this way, a module TFT substrate can be formed.

In addition, the thin film transistor described in this embodiment is characterized in that a conductive film or a mask other than a conductive film is formed by at least an inkjet method. Therefore, if an inkjet method is used for one step of forming a conductive film or a mask other than the conductive film, a step other than the inkjet method may be used for forming the other conductive film. If the ink jet method is used in one process, the material utilization efficiency is improved, and the cost and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

As described above, a thin film transistor having a miniaturized gate electrode, source electrode, and drain electrode can be obtained by the base pretreatment. In addition, when the pre-treatment is selectively performed, wiring can be formed along the pre-treatment region even when dots are ejected with a slight shift, and accurate position control of wiring formation is possible. Become.

(Embodiment 4)
In this embodiment, an example in which the first and second thin film transistors are manufactured by a method different from that in the above embodiment will be described. Specifically, the formation method of the interlayer insulating film and the contact hole is different, and the other structures are the same as those in the above embodiment, so the description is omitted.

As shown in FIG. 5A, as in the above embodiment, first and second thin film transistors are formed, and an interlayer insulating film is formed so as to cover the thin film transistors. In this embodiment, after the organic film 128 having a columnar shape and liquid repellency is formed, the interlayer insulating film 118 is formed by an inkjet method. At this time, since the organic film is liquid repellent with respect to the interlayer insulating film, the interlayer insulating film is not formed on the organic film.

The organic film can be formed by, for example, PVA (polyvinyl alcohol) or FAS (fluoroalkylsilane) by an inkjet method. Further, the organic film is processed by plasma, laser, electron beam or the like. As a result, the liquid repellency of the organic film can be improved. For details, see Japanese Patent Application No. 2003-344880 of the same applicant.

As shown in FIG. 5B, the organic film 128 can be selectively removed by dry etching, wet etching, etching using atmospheric pressure plasma, water washing treatment, or treatment using a laser or an electron beam. . In this embodiment, the organic film 128 is removed by a water washing process. As a result, the region from which the organic film has been removed can be used as the contact hole 129.

As shown in FIG. 5C, the pixel electrode 119 is formed. The pixel electrode can be formed by a sputtering method or an inkjet method. The pixel electrode can be formed using a light-transmitting material or a non-light-transmitting material. For example, ITO or the like can be used when it has translucency, and a metal film can be used when it has non-translucency. As specific pixel electrode materials, indium tin oxide (ITO), IZO (indium zinc oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide, and 2 to 20 in indium oxide. It is also possible to use ITO-SiOx (referred to as ITSO or NITO for convenience), organic indium, organic tin, titanium nitride (TiN), etc. mixed with 1% silicon oxide (SiO ₂ ). In this embodiment mode, a pixel electrode 119 is formed by dropping a dot having a transparent conductive film material from the nozzle 104. At this time, the amount of dots from the nozzle 104 on the contact hole is adjusted so that the pixel electrode is formed in the contact hole 129.

After that, as in the above embodiment, an insulating film functioning as a bank or a partition is formed so as to cover the end portion of the pixel electrode. In this way, a module TFT substrate can be formed.

In addition, the thin film transistor described in this embodiment is characterized in that a conductive film or a mask other than a conductive film is formed by at least an inkjet method. Therefore, if an inkjet method is used for one step of forming a conductive film or a mask other than the conductive film, a step other than the inkjet method may be used for forming the other conductive film. If the ink jet method is used in one process, the material utilization efficiency is improved, and the cost and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

As described above, a thin film transistor having a miniaturized gate electrode, source electrode, and drain electrode can be obtained by the base pretreatment. In addition, when the pre-treatment is selectively performed, wiring can be formed along the pre-treatment region even when dots are ejected with a slight shift, and accurate position control of wiring formation is possible. Become.

(Embodiment 5)
In this embodiment, an example in which the first and second thin film transistors are manufactured by a method different from that in the above embodiment will be described. Specifically, the formation method of the interlayer insulating film and the contact hole is different, and the other structures are the same as those in the above embodiment, so the description is omitted.

As shown in FIG. 6A, first and second thin film transistors are formed as in the above embodiment. After that, a film 136 having liquid repellency with respect to the interlayer insulating film is formed over the formation surface of the interlayer insulating film, in this embodiment, the source and drain electrodes, the channel protective film, the gate insulating film, and the like. . The film having liquid repellency can be formed by, for example, PVA (polyvinyl alcohol) or FAS (fluoroalkylsilane) by an inkjet method.

As shown in FIG. 6B, a mask 131 is selectively formed. The mask can be formed by an inkjet method using, for example, polyimide, polyvinyl alcohol, or the like. Using the mask 131, the liquid-repellent film 136 is selectively removed. As a means for removal, dry etching, wet etching, etching using atmospheric pressure plasma, water washing treatment, or treatment using laser or electron beam can be used. In this embodiment mode, the film having liquid repellency is removed by plasma treatment using oxygen gas at atmospheric pressure. Thereafter, the mask 131 is also removed using the same means. In this embodiment mode, the mask is removed by a water washing process.

As shown in FIG. 6C, an interlayer insulating film 118 is formed. The interlayer insulating film is not formed over the selectively formed liquid-repellent film. As a result, an opening 135 is formed.

As shown in FIG. 6D, a pixel electrode 119 is formed in the opening 135 so as to cover the end of the pixel electrode and the pixel electrode on the opening (also collectively referred to as a part of the pixel electrode). An insulating film 120 that functions as a bank or a partition is formed. In this way, a module TFT substrate can be formed.

In addition, the thin film transistor described in this embodiment is characterized in that a conductive film or a mask other than a conductive film is formed by at least an inkjet method. Therefore, if an inkjet method is used for one step of forming a conductive film or a mask other than the conductive film, a step other than the inkjet method may be used for forming the other conductive film. If the ink jet method is used in one process, the material utilization efficiency is improved, and the cost and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

As described above, a thin film transistor having a miniaturized gate electrode, source electrode, and drain electrode can be obtained by the base pretreatment. In addition, when the pre-treatment is selectively performed, wiring can be formed along the pre-treatment region even when dots are ejected with a slight shift, and accurate position control of wiring formation is possible. Become.

(Embodiment 6)
In this embodiment, an example in which the first and second thin film transistors are manufactured by a method different from that in the above embodiment will be described. Specifically, the configuration in which the channel protective film is not provided is different, and the other configurations are the same as those in the above embodiment, and thus description thereof is omitted.

As shown in FIG. 7A, as in the above embodiment, a TiOx film 101 is formed as a photocatalytic material on a substrate 100, and gate electrodes are formed in regions 11 and 12 where first and second thin film transistors are formed. 103, a gate insulating film 105, a semiconductor film 106, and an n-type semiconductor film 109 are sequentially formed. When the semiconductor and the n-type semiconductor film are formed by the plasma CVD method in this manner, it is preferable that the semiconductor film 106, the n-type semiconductor film 109, and the gate insulating film be continuously formed. In this case, it can be continuously formed without changing to the atmosphere by changing the supply of the source gas.

After that, a mask 111 is formed in order to pattern the semiconductor film 106 and the n-type semiconductor film 109 into a desired shape.

As shown in FIG. 7B, after the semiconductor film and the n-type semiconductor film are patterned, an insulating film 130 is formed around the semiconductor film and the n-type semiconductor film. However, the n-type semiconductor film needs to be connected to a source electrode and a drain electrode to be formed later. Therefore, the insulating film 130 is formed in the peripheral portion so that the n-type semiconductor film is exposed.

As a material of the insulating film 130, an organic material or an inorganic material can be used. As the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, siloxane, or polysilazane can be used. As the inorganic material, silicon oxide or silicon nitride can be used. The insulating film 130 can be formed by an inkjet method or a plasma CVD method.

With the insulating film 130, a step difference between the periphery of the semiconductor film and the n-type semiconductor film can be reduced, and a smooth shape can be obtained. As a result, disconnection of a source electrode and a drain electrode to be formed later can be prevented. The structure in which the insulating film 130 is formed around the semiconductor film and the n-type semiconductor film in this embodiment can be freely combined with any of the above embodiments.

After that, the n-type semiconductor film 109 is etched using the source and drain electrodes 115 as a mask. This is for preventing the source electrode and the drain electrode from being short-circuited by the n-type semiconductor film. At this time, the semiconductor film may be slightly etched.

Next, in order to connect the source electrode or the drain electrode of the first thin film transistor and the gate electrode of the second thin film transistor, a contact hole is formed in the gate insulating film by an etching method. For the method of forming a contact hole in the gate insulating film, the above embodiment may be referred to.

After that, a conductive film 116 for connecting the source electrode or the drain electrode of the first thin film transistor and the gate electrode of the second thin film transistor is formed in the contact hole. For the formation method of the conductive film 116, the above embodiment mode may be referred to.

In this manner, active elements that function as the first and second thin film transistors are completed.

As described above, the thin film transistor provided with the source electrode and the drain electrode is completed. The thin film transistor in this embodiment is a so-called bottom gate thin film transistor in which a gate electrode is provided below a semiconductor film. More specifically, it is a so-called channel etch type in which a channel protective film is not provided. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

As shown in FIG. 7C, a columnar conductive film 117 is formed over the source electrode or the drain electrode of the second thin film transistor. After that, an interlayer insulating film 118, a pixel electrode 119, and an insulating film 120 functioning as a bank or a partition are formed. For the method for forming the columnar conductive film 117, the interlayer insulating film 118, the pixel electrode 119, and the insulating film 120 functioning as a bank or a partition, the above embodiment mode may be referred to. In FIG. 7C, a columnar conductive film 117, an interlayer insulating film 118, a pixel electrode 119, and the like are formed so as to correspond to the first embodiment. 5 can be combined freely. The TFT substrate in this state is referred to as a module TFT substrate.

In addition, the thin film transistor described in this embodiment is characterized in that a conductive film or a mask other than a conductive film is formed by at least an inkjet method. Therefore, if an inkjet method is used for one step of forming a conductive film or a mask other than the conductive film, a step other than the inkjet method may be used for forming the other conductive film. If the ink jet method is used in one process, the material utilization efficiency is improved, and the cost and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

As described above, a thin film transistor having a miniaturized gate electrode, source electrode, and drain electrode can be obtained by the base pretreatment. In addition, when the pre-treatment is selectively performed, wiring can be formed along the pre-treatment region even when dots are ejected with a slight shift, and accurate position control of wiring formation is possible. Become.

(Embodiment 7)
In this embodiment, an example in which the first and second thin film transistors are manufactured by a method different from that in the above embodiment will be described. Specifically, it is a so-called top gate type thin film transistor in which a gate electrode is provided over a semiconductor film, and the description of other structures is omitted because it is the same as that of the above embodiment mode.

As shown in FIG. 8A, a TiOx film 101 is formed on the substrate 100. Further, as described above, a base film may be formed on the substrate as necessary. As the base film, an insulating film such as silicon oxide, silicon nitride, silicon nitride oxide, titanium oxide, or titanium nitride can be used. In the present embodiment, the TiOx film functions as a base film.

A source electrode and a drain electrode 115 are formed in the regions 11 and 12 where the first and second thin film transistors are to be formed. For the method for manufacturing the source electrode and the drain electrode, the above embodiment mode may be referred to, and in this embodiment mode, dots having Ag are dropped by an ink-jet method. After that, an n-type semiconductor film 109 is formed as necessary. As a result, the resistance of the source and drain electrodes and the semiconductor film can be reduced, which is preferable. In the case of forming an n-type semiconductor film, it is necessary to perform etching to prevent the source electrode and the drain electrode from being short-circuited by the n-type semiconductor film.

A semiconductor film 106 and a gate insulating film 105 are formed in this order. The semiconductor film and the gate insulating film can be continuously formed by changing the source gas. For the method for manufacturing the semiconductor film and the gate insulating film, the above embodiment mode may be referred to. After that, a mask is formed (not shown), and the n-type semiconductor film 109, the semiconductor film 106, and the gate insulating film 105 are patterned into a desired shape.

A gate electrode 103 is formed over the semiconductor film. The above embodiment mode may be referred to for a method for manufacturing the gate electrode. In this embodiment mode, dots having Ag are dropped by an inkjet method.

Although not shown, a protective film may be formed over the gate electrode. The protective film can be formed of silicon nitride, silicon oxide, or the like, and can have a single layer structure or a laminated structure. For example, a protective film in which silicon nitride, silicon oxide, and silicon nitride are stacked in this order can be formed. When Ag is used as a gate electrode as in this embodiment mode, it is preferable to use a silicon nitride film as an insulating film in contact with Ag as a gate insulating film. This is because when an insulating film containing oxygen is used, it reacts with Ag, silver oxide is formed, and the gate electrode surface may be roughened.

After that, a conductive film 116 for connecting the source electrode or the drain electrode of the first thin film transistor and the gate electrode of the second thin film transistor is formed. For the method for manufacturing the conductive film, the above embodiment mode may be referred to.

In this manner, active elements that function as the first and second thin film transistors are completed.

As described above, the thin film transistor provided with the source electrode and the drain electrode is completed. The thin film transistor of this embodiment is a so-called top gate thin film transistor in which a gate electrode is provided above a semiconductor film. A substrate provided with a plurality of such thin film transistors is referred to as a TFT substrate.

As shown in FIG. 8B, a columnar conductive film 117 is formed over the source electrode or the drain electrode of the second thin film transistor. After that, an interlayer insulating film 118, a pixel electrode 119, and an insulating film 120 functioning as a bank or a partition are formed. For the method for forming the columnar conductive film 117, the interlayer insulating film 118, the pixel electrode 119, and the insulating film 120 functioning as a bank or a partition, the above embodiment mode may be referred to. In FIG. 8B, a columnar conductive film 117, an interlayer insulating film 118, a pixel electrode 119, and the like are formed so as to correspond to the first embodiment. 5 can be combined freely. The TFT substrate in this state is referred to as a module TFT substrate.

In addition, the thin film transistor described in this embodiment is characterized in that a conductive film or a mask other than a conductive film is formed by at least an inkjet method. Therefore, if an inkjet method is used for one step of forming a conductive film or a mask other than the conductive film, a step other than the inkjet method may be used for forming the other conductive film. If the ink jet method is used in one process, the material utilization efficiency is improved, and the cost and the amount of waste liquid can be reduced. In particular, when a mask is formed by an inkjet method, the process can be simplified as compared with a photolithography process. As a result, it is possible to reduce capital investment cost, cost reduction, and manufacturing time.

As described above, a thin film transistor having a miniaturized gate electrode, source electrode, and drain electrode can be obtained by the base pretreatment. In addition, when the pre-treatment is selectively performed, wiring can be formed along the pre-treatment region even when dots are ejected with a slight shift, and accurate position control of wiring formation is possible. Become.

(Embodiment 8)
In this embodiment mode, planarization treatment for an interlayer insulating film is described.

As shown in FIG. 9A, an interlayer insulating film 118 is formed by an inkjet method or a coating method. For the material of the interlayer insulating film, the above embodiment can be referred to. In this embodiment mode, siloxane is used and an interlayer insulating film is formed by an inkjet method. At this time, before the dots containing the organic material are dropped and heated, the interlayer insulating film is flattened by means 150 for spraying gas. For example, an air knife used for removing impurities such as a substrate can be used as a means for spraying gas. As the gas, air, oxygen, or nitrogen can be used. As a result, it is possible to flatten even the micro unevenness formed on the surface of the interlayer insulating film. After the planarization treatment, heating is performed and baking is performed.

The surface of the columnar conductive film 117 can also be planarized by means of blowing gas. For example, when a contact hole is formed in an interlayer insulating film and a conductive film is formed in the contact hole by an ink-jet method, the conductive film material is sprayed by means of blowing a gas before dropping a dot having a conductive film material and heating. The surface of the film can be planarized. After the planarization treatment, heating is performed and baking is performed.

Further, after the conductive film is formed, the interlayer insulating film is formed by heating to the extent that the columnar shape is maintained. Then, before heating, the surfaces of the conductive film and the interlayer insulating film can be planarized by means of blowing gas. After the planarization treatment, heating is performed and baking is performed.

Further, a few drops of conductive material are dropped on the conductive film formation region to form an interlayer insulating film. At this time, an opening is formed in the interlayer insulating film on the dot by imparting liquid repellency to the dot having the conductive film material. Then, a dot-shaped conductive film is formed by dropping a dot having a conductive film material into the opening. After that, before heating, the surfaces of the conductive film and the interlayer insulating film can be planarized by means of blowing gas. After the planarization treatment, heating is performed and baking is performed.

Thus, by increasing the flatness of the surfaces of the interlayer insulating film and the conductive film, a multilayer wiring in which the insulating film and the conductive film are stacked can be formed.

The present embodiment is characterized in that the surface of an interlayer insulating film or the like is planarized by a means for blowing gas, and other structures can be freely combined with the above embodiment.

FIG. 9B shows an overall view of the planarization process. In the case where the width of the gas blowing means 150 is larger than the width of the substrate 100 on which the interlayer insulating film is formed, productivity is increased even for a large mother glass substrate. On the other hand, even if the width of the means for injecting the gas is smaller than the width of the substrate, the large mother glass substrate can be planarized by scanning a plurality of times. In FIG. 9, it is described that the means for injecting the gas moves, but it is only necessary that the means for injecting the gas and the substrate move relatively.

Such planarization treatment can be performed under atmospheric pressure or reduced pressure. Furthermore, the atmosphere may be controlled by introducing oxygen, nitrogen, a rare gas, or the like into the planarization chamber. Further, the substrate may be heated or the temperature of the planarization treatment chamber may be controlled.

FIG. 10 shows an in-line manufacturing apparatus in which a processing chamber (dropping processing chamber) for dropping dots by an inkjet method or the like and a planarization processing chamber are connected in series.

The load chamber 200 for storing the substrate is installed with a dropping treatment chamber 202 that discharges droplets via a transfer chamber 201, and the dropping treatment chamber is set with a flattening treatment chamber 204 via a transfer chamber 203. The substrate 100 is transferred in the order of the load chamber, the dropping processing chamber, and the planarization processing chamber, and processed as described in the above embodiment. Moreover, you may perform a dripping process after the planarization process.

Further, as in the planarization treatment chamber shown in FIG. 10, it is preferable to dispose the means for injecting gas obliquely with respect to the substrate. This is because the position where flattening is started can be controlled.

Such a manufacturing apparatus is preferable because the substrate can be easily transported. In addition, when performing atmosphere control in the dropping process and the planarization process, it is preferable to use an in-line manufacturing apparatus because the process can be performed without opening to the atmosphere.

(Embodiment 9)
In this embodiment, a case where an electroluminescent layer is formed over the module TFT substrate described in the above embodiment will be described.

As shown in FIG. 11A, an opening is formed in the insulating film 120 functioning as a bank or a partition so that a pixel electrode (also referred to as a first electrode of a light-emitting element) 119 is exposed. The end face of the opening of the insulating film has a taper or a curvature. For example, in the case where the insulating film 120 is formed using positive photosensitive acrylic, an opening having a curvature can be formed at the upper end when the photosensitive organic resin is etched by an exposure process. The taper or curvature of the opening can prevent disconnection of an electroluminescent layer to be formed later.

After the insulating film 120 is formed, heat treatment is preferably performed under atmospheric pressure or reduced pressure. The heating temperature is 100 ° C to 450 ° C, preferably 250 ° C to 350 ° C. As a result, moisture adsorbed in the insulating film 120 or on the surface thereof can be removed.

Note that in this embodiment mode, since the ITO is used for the pixel electrode, the pixel electrode 119 is formed after the silicon nitride film 132 is formed over the interlayer insulating film.

An electroluminescent layer 133 is formed in the opening of the insulating film 120. After the heat treatment for the insulating film 120, the electroluminescent layer is preferably formed by a vacuum evaporation method or a droplet discharge method under reduced pressure without being exposed to the atmosphere. Alternatively, plasma treatment may be performed before the electroluminescent layer is formed, and the insulating film 120 may be subjected to liquid repellency treatment. In this embodiment mode, plasma treatment is performed on the opening of the insulating film 120. The material of the electroluminescent layer can be used as an organic material (including a low molecule or a polymer) or a composite material of an organic material and an inorganic material. The electroluminescent layer can be formed by an inkjet method, a coating method, or a vapor deposition method. The polymer material is preferably an ink jet method or a coating method, and the low molecular material is preferably an evaporation method, particularly a vacuum evaporation method. In this embodiment mode, a low molecular material is formed by a vacuum evaporation method as the electroluminescent layer.

Note that the type of molecular excitons formed by the electroluminescent layer can be a singlet excited state or a triplet excited state. The ground state is usually a singlet state, and light emission from the singlet excited state is called fluorescence. In addition, light emission from the triplet excited state is called phosphorescence. The light emission from the electroluminescent layer includes the case where either excited state contributes. Furthermore, fluorescence and phosphorescence may be used in combination, and either fluorescence or phosphorescence can be selected depending on the emission characteristics of each RGB (emission luminance, lifetime, etc.).

In general, the electroluminescent layer is in the order of HIL (hole injection layer), HTL (hole transport layer), EML (light emitting layer), ETL (electron transport layer), and EIL (electron injection layer) in this order from the pixel electrode 119 side. Are stacked. However, in the present invention, since the driving transistor is an n-channel type, the pixel electrode is used as a cathode, and EIL (electron injection layer), ETL (electron transport layer), EML (light emitting layer), HTL (hole transport layer), HIL It is preferable to stack in the order of (hole injection layer). Note that the electroluminescent layer can have a single layer structure or a mixed structure in addition to such a stacked structure.

Specifically, CuPc or PEDOT is used as HIL, α-NPD is used as HTL, BCP or Alq _{3 is used} as ETL, and BCP: Li or CaF ₂ is used as EIL. Further, for example, EML may be Alq ₃ doped with a dopant corresponding to each emission color of R, G, and B (DCM in the case of R, DMQD in the case of G).

Note that the electroluminescent layer is not limited to the above materials. For example, instead of CuPc or PEDOT, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) and α-NPD or rubrene can be co-evaporated to improve the hole injection property.

In this embodiment mode, a material that emits red (R), green (G), and blue (B) light is selectively formed as the electroluminescent layer 141 by an evaporation method using an evaporation mask or the like. it can. In the case of using an inkjet method, a material that emits red (R), green (G), or blue (B) light can be formed without using an evaporation mask.

Furthermore, when each RGB electroluminescent layer is formed, high-definition display can be performed using a color filter. This is because the color filter can correct a broad peak in the emission spectrum of each RGB so as to be sharp.

The case where the RGB electroluminescent layers are formed has been described above, but an electroluminescent layer exhibiting monochromatic light emission may be formed. In this case, full color display can be performed by combining a color filter and a color conversion layer. For example, when an electroluminescent layer that emits white or orange light is formed, full color display can be performed by providing a color filter or a combination of a color filter and a color conversion layer. For example, the color filter and the color conversion layer may be formed over a second substrate (also referred to as a sealing substrate) and attached to the substrate. Both the color filter and the color conversion layer can be formed by an inkjet method.

Needless to say, a monochromatic display may be performed by forming an electroluminescent layer that emits monochromatic light. For example, an area color type display can be performed using monochromatic light emission. The area color type is suitable for a passive matrix structure and can mainly display characters and symbols.

After that, as illustrated in FIG. 11B, the second electrode 134 of the light-emitting element is formed so as to cover the electroluminescent layer 133 and the insulating film 120.

The materials of the first electrode 119 and the second electrode 134 need to be selected in consideration of the work function. The first electrode and the second electrode can be either an anode or a cathode depending on the pixel configuration. In this embodiment mode, since the polarity of the second thin film transistor to which the first electrode is connected is an n-channel type, the first electrode is preferably a cathode and the second electrode is an anode. In the case where the polarity of the second thin film transistor is a p-channel type, it is preferable that the first electrode be an anode and the second electrode be a cathode.

Below, the electrode material used for an anode and a cathode is demonstrated.

As an electrode material used as the anode, it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a high work function (work function of 4.0 eV or more). Specific materials include ITO (indium tin oxide), IZO (indium zinc oxide) in which 2 to 20% zinc oxide (ZnO) is mixed with indium oxide, ITSO (NITO), gold, platinum, nickel, tungsten, Chromium, molybdenum, iron, cobalt, copper, palladium, or a nitride of a metal material (eg, titanium nitride) can be used.

On the other hand, as an electrode material used as a cathode, it is preferable to use a metal, an alloy, an electrically conductive compound, a mixture thereof, or the like having a low work function (work function of 3.8 eV or less). Specific examples of the material include elements belonging to Group 1 or Group 2 of the element periodic rule, that is, alkali metals such as lithium and cesium, alkaline earth metals such as magnesium, calcium, and strontium, and alloys containing these (Mg: In addition to Ag, Al: Li) and compounds (LiF, CsF, CaF ₂ ), transition metals including rare earth metals can be used.

Further, in the present embodiment, when the cathode material needs to be light-transmitting, these metals or alloys containing these metals are formed very thin, and ITO, IZO, ITSO, or other metals (including alloys) are formed. And can be formed by lamination.

As described above, the light emitting direction from the electroluminescent layer can be selected by making the anode material or the cathode material used as the first electrode or the second electrode light-transmitting or non-light-transmitting. it can. For example, in the case where the first electrode and the second electrode are formed using a light-transmitting material, a dual emission display in which light from the electroluminescent layer is emitted to the substrate side 170 and the sealing substrate side 171 is performed. be able to. At this time, light can be effectively used by using a highly reflective conductive film for the non-light-transmitting electrode provided on the side not corresponding to the light emission direction.

The first electrode and the second electrode can be formed by an evaporation method, a sputtering method, an inkjet method, or the like.

Moreover, when forming ITO, ITSO, or those laminated bodies as a 2nd electrode by sputtering method, there exists a possibility that an electroluminescent layer may be damaged at the time of sputtering. In order to reduce damage due to sputtering, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) is preferably formed on the uppermost surface of the electroluminescent layer. Therefore, an oxide such as molybdenum oxide (MoOx: x = 2 to 3) or titanium oxide (TiOx) that functions as an HIL or the like is formed on the uppermost surface of the electroluminescent layer, and the EIL (electron) is sequentially formed from the first electrode side. The injection layer), the ETL (electron transport layer), the EML (light emitting layer), the HTL (hole transport layer), the HIL (hole injection layer), and the second electrode may be stacked in this order. That is, an electroluminescent layer in which an organic material and an inorganic material are mixed may be formed. At this time, the first electrode functions as a cathode, and the second electrode functions as an anode.

In particular, in this embodiment, since the polarity of the second thin film transistor is an n-channel type, the first electrode is a cathode, EIL (electron injection layer), ETL (electron transport layer), It is preferable that the EML (light emitting layer), HTL (hole transport layer), HIL (hole injection layer), and the second electrode be an anode.

In this embodiment mode, an interlayer insulating film is formed, which has high flatness and can apply a voltage uniformly to the electroluminescent layer.

After that, an insulating film containing nitrogen, a carbon film containing nitrogen (CNx), DLC, or the like may be formed as a protective film over the second electrode by a sputtering method or a CVD method. A film made of an organic material such as styrene polymer may be laminated on the film made of these inorganic materials. As a result, moisture and oxygen can be prevented from entering. In particular, when NITO is used for the second electrode, it is preferable to form a silicon nitride film as the protective film. In addition, the first electrode, the second electrode, and other electrodes can cover the side surface of the display region and prevent entry of oxygen and moisture.

After that, as illustrated in FIG. 12A, the sealing substrate 151 is attached using a sealant 153. Nitrogen may be enclosed in the space 154 formed by the sealing substrate, or a desiccant may be disposed. Further, a resin having translucency and high water absorption may be filled. In this embodiment mode, a groove is formed in the sealing substrate 151 and the groove is filled with the desiccant 152. The desiccant is preferably formed above the insulating film 120 so as not to block light emission from the electroluminescent layer. The desiccant may be provided above the sealing material. As a result, intrusion of oxygen and moisture from the sealing material can be prevented.

In this way, the light emitting module is completed.

Further, in the connection region with the external terminal provided outside the sealing material, the wiring on the substrate is bonded to the external terminal 162 by bonding an FPC (Flexible Printed Circuit) 161 using an anisotropic conductive film 160. Can be connected. The external terminal is a signal line driver circuit or a scanning line driver circuit, and is formed of an integrated circuit having an IC chip or a crystalline semiconductor film. In this embodiment mode, in the case where a microcrystalline semiconductor is selected as a semiconductor film material, a scan line driver circuit, a selector circuit (analog switch) that forms part of the circuit, or the like can be formed over the same substrate. In the case where a crystalline semiconductor film is selected, the scan line driver circuit and the signal line driver circuit can be formed over the same substrate. A signal line driver circuit or a scan line driver circuit may be connected. Further, the signal line driver circuit or the scan line driver circuit may be formed as an external circuit.

In this manner, a light emitting device in which an external terminal is connected to the light emitting module can be formed.

(Embodiment 10)
In this embodiment mode, a pixel circuit and an operation thereof are described.

In the pixel shown in FIG. 13A, a signal line 410 and power supply lines 411 and 412 are arranged in the column direction, and a scanning line 414 is arranged in the row direction. The pixel further includes a switching TFT 401, a driving TFT 403, a current control TFT 404, a capacitor element 402, and a light emitting element 405.

The pixel shown in FIG. 13C is different from the pixel shown in FIG. 13A except that the gate electrode of the driving TFT 403 is connected to the power supply line 412 arranged in the row direction. It is a configuration. That is, both pixels shown in FIGS. 13A and 13C show the same equivalent circuit diagram. However, when the power supply line 412 is arranged in the direction parallel to the signal line (row direction) (FIG. 13A), and when the power supply line 412 is arranged in the direction parallel to the scanning line (column direction) ( In FIG. 13C, each power supply line is formed using different layers of conductive films. Here, attention is paid to the wiring to which the gate electrode of the driving TFT 403 is connected, and FIGS. 13A and 13C are separately shown in order to show that the layers for producing these are different.

As a feature of the pixel shown in FIGS. 13A and 13C, a driving TFT 403 and a current control TFT 404 are connected in series in the pixel, and a channel length L (403) and a channel width W (403 of the driving TFT 403 are included. ), And the channel length L (404) and the channel width W (404) of the current control TFT 404 satisfy L (403) / W (403): L (404) / W (404) = 5 to 6000: 1. It is good to set to.

Note that the driving TFT 403 operates in a saturation region and controls the current value flowing through the light emitting element 405, and the current control TFT 404 operates in a linear region and controls the supply of current to the light emitting element 405. . Both TFTs preferably have the same conductivity type in terms of manufacturing process, and in this embodiment mode, they are formed as n-channel TFTs. The driving TFT 403 may be a depletion type TFT as well as an enhancement type. In the present invention having the above structure, since the current control TFT 404 operates in a linear region, a slight change in Vgs of the current control TFT 404 does not affect the current value of the light emitting element 405. That is, the current value of the light emitting element 405 can be determined by the driving TFT 403 operating in the saturation region. With the above structure, it is possible to provide a display device in which luminance unevenness of a light-emitting element due to variation in TFT characteristics is improved and image quality is improved.

In the pixels shown in FIGS. 13A to 13D, the switching TFT 401 controls input of a video signal to the pixel. When the switching TFT 401 is turned on, the video signal is input into the pixel. Then, the voltage of the video signal is held in the capacitor 402. Note that FIGS. 13A and 13C illustrate a structure in which the capacitor 402 is provided; however, the present invention is not limited to this, and the capacity for holding a video signal can be covered by a gate capacity or the like. In this case, the capacitor 402 is not necessarily provided.

The pixel illustrated in FIG. 13B has the same pixel configuration as that illustrated in FIG. 13A except that an erasing TFT 406 and a scanning line 415 for discharging the charge accumulated in the capacitor 402 are added. is there. Similarly, the pixel illustrated in FIG. 13D has the same pixel structure as that illustrated in FIG. 13C except that an erasing TFT 406 and a scanning line 415 are added.

The erasing TFT 406 is controlled to be turned on or off by a newly arranged scanning line 415. When the erasing TFT 406 is turned on, the electric charge held in the capacitor element 402 is discharged, and the current control TFT 404 is turned off. In other words, the state in which no current flows through the light emitting element 405 can be created by the arrangement of the erasing TFT 406. Therefore, the erasing TFT 406 can be called an erasing TFT. Accordingly, the configurations in FIGS. 13B and 13D improve the duty ratio because the lighting period can be started simultaneously with or immediately after the start of the writing period without waiting for signal writing to all pixels. It becomes possible.

In the pixel shown in FIG. 13E, a signal line 410, a power supply line 411 are arranged in the column direction, and a scanning line 414 is arranged in the row direction. In addition, the pixel includes a switching TFT 401, a driving TFT 403, a capacitor element 402, and a light emitting element 405. The pixel illustrated in FIG. 13F has the same pixel structure as that illustrated in FIG. 13E except that an erasing TFT 406 and a scanning line 415 are added. Note that the duty ratio of the structure in FIG. 13F can also be improved by the arrangement of the erasing TFT 406.

As described above, various pixel circuits can be employed. In particular, when a thin film transistor is formed from an amorphous semiconductor film, it is preferable to increase the semiconductor film of the driving TFT. Therefore, it is preferable that the pixel circuit be a top emission type in which light from the electroluminescent layer is emitted from the sealing substrate side.

Such an active matrix light-emitting device is considered to be advantageous because it can be driven at a low voltage because a TFT is provided in each pixel when the pixel density is increased.

In this embodiment mode, an active matrix light-emitting device in which each pixel is provided with each TFT has been described; however, a passive matrix light-emitting device in which a TFT is provided for each column can also be formed. A passive matrix light-emitting device has a high aperture ratio because a TFT is not provided for each pixel. In the case of a light-emitting device in which light emission is emitted to both sides of an electroluminescent layer, transmittance using a passive matrix display device is increased.

(Embodiment 11)
In this embodiment, a top view corresponding to the equivalent circuit illustrated in FIG. 13E is described.

In this embodiment mode, the first and second thin film transistors have a bottom gate type. A case where a contact hole is formed in the gate insulating film by dry etching using the source electrode and the drain electrode in order to connect the source electrode or the drain electrode of the first thin film transistor and the gate electrode of the second thin film transistor is described. To do. Other thin film transistors can be manufactured by referring to the above embodiment modes, and detailed description thereof is omitted.

As shown in FIG. 14, the switching TFT 401, the gate electrode of the driving TFT 403, and the scanning line 803 are formed in the same layer on the TiOx film by an inkjet method or a sputtering method. In the case of forming a gate electrode or the like by an inkjet method, the adhesion can be enhanced by the TiOx film.

Although not illustrated, a gate insulating film, a semiconductor film, and an n-type semiconductor film included in the switching TFT 401, the driving TFT 403 are sequentially formed. Thereafter, patterning is performed in a desired shape.

Then, the switching TFT 401, the source and drain electrodes of the driving TFT 403, the signal line 804, and the power supply line 805 are formed in the same layer by an inkjet method or a sputtering method. In the case where a source electrode, a drain electrode, and the like are formed by an ink jet method, adhesion can be improved by a base pretreatment.

After that, the n-type semiconductor film is etched using the source electrode and the drain electrode.

In addition, the gate insulating film is etched using the source and drain electrodes, the signal line 804, and the power supply line 805. Then, since the gate electrode of the driving TFT is exposed, the gate electrode and the source electrode or drain electrode of the switching TFT can be connected by the conductive film 806. The conductive film can be formed by an inkjet method.

Next, a pixel electrode is formed so as to be connected to the source electrode or the drain electrode of the driving TFT. In this embodiment mode, the pixel electrode 807 is formed by an inkjet method using NITO.

In addition, the capacitor element 402 is formed using a conductive film in the same layer as the gate electrode of the driving TFT, a gate insulating film, and a conductive film in the same layer as the power supply line.

In this embodiment mode, since the driving TFT includes an amorphous semiconductor film, the driving TFT may be designed to have a wide channel width (W).

FIG. 15A shows a cross-sectional view corresponding to AB in FIG.

A TiOx film 101 is provided on the substrate 100. A conductive film functioning as the gate electrode 823 and the scanning line 803 is provided in the region where the switching TFT 401 is formed on the TiOx film and in the region 800 where the scanning line and the signal line intersect.

Then, a gate insulating film 811, a semiconductor film 812, and an n-type semiconductor film 813 that are patterned into a desired shape are sequentially stacked.

In a region where the switching TFT 401 is formed and a region 800 where the scanning line and the signal line intersect, a conductive film functioning as a signal line 804, a source electrode, and a drain electrode 814 is provided over the gate insulating film.

In FIG. 15B, unlike FIG. 15A, an insulating film 816 is formed before the signal line 804, the source electrode, and the drain electrode 814 are formed. The insulating film can be formed by an ink-jet method and is preferably provided over the scan line 803 in the intersection region 800 or around the semiconductor film and the n-type semiconductor film. By forming the insulating film 816 over the scan line 803, the signal line and the scan line can be prevented from being short-circuited. In addition, by providing the insulating film 816 around the semiconductor film and the n-type semiconductor film, disconnection of the source and drain electrodes 814 can be prevented.

Next, a top view in the case of using a top-gate thin film transistor is shown.

In FIG. 16, unlike FIG. 14, first, the source electrode and the drain electrode for switching 401, the signal line 804, and the power supply line 805 are formed in the same layer. In this embodiment, the source and drain electrodes, the signal line 804, and the power supply line 805 are formed by an inkjet method. In the case where a source electrode, a drain electrode, and the like are formed by an ink jet method, adhesion can be improved by a base pretreatment.

Thereafter, a semiconductor film and a gate insulating film are sequentially formed and patterned into a desired shape. Further, an n-type semiconductor film may be formed at the interface between the source and drain electrodes and the semiconductor film as necessary.

Then, the gate electrodes of the switching TFT 401 and the driving TFT 403 and the scanning line 803 are formed in the same layer. In this embodiment, the gate electrode and the scan line 803 are formed by an inkjet method. In the case where a gate electrode or the like is formed by an ink jet method, the adhesion can be enhanced by a base pretreatment.

A gate electrode of the driving TFT 403 and a source electrode or a drain electrode of the switching TFT are connected by a conductive film 806. The conductive film can be formed by an inkjet method.

Next, a pixel electrode is formed so as to be connected to the source electrode or the drain electrode of the driving TFT 403. In this embodiment mode, the pixel electrode 807 is formed by an inkjet method using NITO.

In FIG. 16, the capacitor is not provided, but may be provided as in FIG.

In this embodiment mode, since the driving TFT includes an amorphous semiconductor film, the driving TFT may be designed to have a wide channel width (W).

FIG. 17A shows a cross-sectional view corresponding to AB in FIG.

A TiOx film 101 is provided on the substrate 100. The TiOx film can also function as a base film. A conductive film including a source electrode and a drain electrode 814 and a signal line 804 is provided in a region where the switching TFT 401 and the driving TFT 403 are formed on the TiOx film.

Then, an n-type semiconductor film 813 patterned in a desired shape, a semiconductor film 812, and a gate insulating film 811 are sequentially stacked. An n-type semiconductor film is not always necessary.

In a region where the switching TFT 401 is formed and a region 800 where the scanning line and the signal line intersect, a scanning line 803 and a conductive film functioning as a gate electrode are provided over the gate insulating film.

In FIG. 17B, unlike FIG. 17A, an insulating film 816 is formed before the scan line 803 and the gate electrode are formed. The insulating film can be formed by an ink-jet method and can be provided in a crossing region or around a semiconductor film and an n-type semiconductor film. By forming the insulating film 816 in the crossing region, the scanning line and the signal line can be prevented from being short-circuited. In addition, by providing the insulating film 816 around the semiconductor film and the n-type semiconductor film, disconnection of the source and drain electrodes 814 can be prevented.

(Embodiment 12)
In this embodiment, the case where a diode is provided as a protective circuit in the scan line and the signal line is described using the equivalent circuit illustrated in FIG.

In FIG. 21, a switching TFT 401, a driving TFT 403, a capacitor element 402, and a light emitting element 405 are provided in the pixel portion 500. The signal line 410 is provided with diodes 561 and 562. Similarly to the switching TFT 401 or the driving TFT 403, the diodes 561 and 562 are manufactured based on the above embodiment mode and include a gate electrode, a semiconductor layer, a source electrode, a drain electrode, and the like. The diodes 561 and 562 operate as diodes by connecting a gate electrode to a drain electrode or a source electrode.

Common potential lines 554 and 555 connected to the diode are formed in the same layer as the gate electrode. Therefore, in order to connect to the source electrode or the drain electrode of the diode, it is necessary to form a contact hole in the gate insulating layer.

The contact hole to the gate insulating layer may be etched by forming a mask by an ink jet method. In this case, if an atmospheric pressure discharge etching process is applied, a local electric discharge process is also possible, and it is not necessary to form a mask on the entire surface of the substrate.

A diode provided in the scan line 414 has a similar structure.

Thus, according to the present invention, the protection diode provided in the input stage can be formed simultaneously. Note that the position where the protective diode is formed is not limited to this embodiment mode, and the protective diode can be provided between the driver circuit and the pixel.

(Embodiment 13)
In this embodiment, a droplet discharge device will be described.

FIG. 18 shows one mode of a droplet discharge device used for forming a pattern such as a wiring. The droplet discharge means 823 has a head 825, and the head 825 has a plurality of nozzles 104. The nozzle 104 may not be visible from the tip of the head 825. In the present embodiment, a liquid droplet ejecting unit having two heads provided with ten nozzles will be described. The head 825 is connected to the control means 827, and the control means is controlled by the computer 810, so that a preset pattern can be drawn. The drawing timing may be performed using, for example, the marker 841 formed on the substrate 100 fixed on the stage 831 as a reference point. Further, the edge of the substrate 100 may be used as a reference point. These reference points are detected by an imaging unit 824 such as a CCD, and converted into a digital signal by an image processing unit 809. The computer 810 recognizes the digitally changed signal, generates a control signal, and sends it to the control means 827. At this time, information on the pattern formed on the substrate 100 is stored in the storage medium 808. Based on this information, a control signal is sent to the control means 827, and the individual heads 825 of the droplet discharge means 823, that is, The nozzles of the head can be individually controlled.

Since the nozzles can be individually controlled, dots having different materials can be dropped from a specific nozzle. For example, a nozzle for dropping a dot having a conductive film material and a nozzle for dropping a dot having an insulating film material can be provided in the same head. Further, in the case of performing a dropping process on a large area like an interlayer insulating film, dots having an interlayer insulating film material may be dropped from all nozzles in order to improve throughput.

The entire width of the droplet discharge means 823 is equal to or less than the width of the substrate 100. In particular, when a large mother glass substrate is used, the entire width of the droplet discharge means 823 is considered to be smaller than the width of the mother glass substrate. At this time, a pattern can be formed on the large mother glass substrate by relatively scanning the head and the substrate a plurality of times.

For example, as shown in FIG. 26, when a plurality of panels are formed from a large mother glass, the entire width of the droplet discharge means 823 can be the width of the panel. In FIG. 26, the droplet discharge means 823 is arranged in three rows in the scanning direction.

In FIG. 26, a region 830 where one panel is formed on the large substrate 100 is indicated by a dotted line. The droplet discharge means 823 includes heads 825a, 825b, and 825c having the same width as one panel, and the droplet discharge means 823 is zigzag or reciprocated to form a pattern. At this time, the head and the substrate may be relatively scanned a plurality of times. Other configurations are the same as those in FIG. In FIG. 26, the nozzles may not be visible from the heads 825a, 825b, and 825c.

In FIG. 26, heads 825a, 825b, and 825c may be capable of forming different material layers, or may eject the same material. When the same material is discharged by three heads to form an interlayer insulating film pattern, the throughput is improved.

(Embodiment 14)
As electronic devices using the display device described in the above embodiment, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproducing device (car audio, audio component, etc.), a notebook type personal computer , Game devices, portable information terminals (mobile computers, mobile phones, portable game machines, electronic books, etc.), image playback devices equipped with recording media (specifically, digital Versatile Disc (DVD) and other recording media) And a device provided with a display capable of displaying the image). In particular, it is desirable to use the ink jet method described in the above embodiment mode for a large television having a large screen. Specific examples of these electronic devices are shown in FIGS.

FIG. 19A illustrates a large EL television receiver including a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video signal input terminal 2005, and the like. The display portion 2003 is provided with a module having a pixel portion and a driver circuit portion. The pixel portion includes a light-emitting element and includes a TFT formed by the inkjet method described in the above embodiment mode. The display device includes all information display devices for personal computers, TV broadcast reception, advertisement display, and the like.

In order to increase contrast, the pixel portion may be provided with a polarizing plate or a circular polarizing plate. For example, a film may be provided on the sealing substrate in the order of a 1 / 4λ plate, a 1 / 2λ plate, and a polarizing plate. Further, an antireflection film may be provided on the polarizing plate.

FIG. 19B is a block diagram illustrating a main structure of an EL television receiver. In the display panel, a pixel portion 901 is formed as the structure described in the above embodiment mode. The scan line driver circuit 903 and the signal line driver circuit 902 are mounted by a TAB method, and the scan line driver circuit 903 and the signal line driver circuit 902 are mounted by a COG method around the pixel portion. In some cases, a TFT is formed by SAS, the pixel portion 901 and the scanning line driver circuit 903 are integrally formed on a substrate, and the signal line driver circuit 902 is separately mounted as a driver IC.

As the configuration of the external circuit, on the video signal input side, among the signals received by the tuner 904, the video signal amplification circuit 905 that amplifies the video signal and the signal output from the video signal amplification circuit correspond to each color of red, green, and blue A video signal processing circuit 906 for converting the video signal into a color signal, and a control circuit 907 for converting the video signal into an input specification of the driver IC. Signals are output from the control circuit 907 to the scanning line driver circuit and the signal line driver circuit, respectively. In the case of digital driving, a signal dividing circuit 908 may be provided between the control circuit and the signal line driving circuit, and the input digital signal may be divided into m pieces and supplied.

Of the signals received by the tuner 904, the audio signal is sent to the audio signal amplifier circuit 909, and the output is supplied to the speaker 913 via the audio signal processing circuit 910. The control circuit 911 receives control information on the receiving station (reception frequency) and volume from the input unit 912 and sends a signal to the tuner 904 and the audio signal processing circuit 910.

A television receiver can be completed by incorporating a display portion in which such an external circuit is incorporated into the housing 2001. Other accessory equipment includes a speaker unit 2004, a video signal input terminal 2005, an operation switch, and the like. Thus, an EL television receiver can be completed according to the present invention.

Of course, the present invention is not limited to a television receiver, and is applied to various uses as a display medium of a particularly large area such as a monitor of a personal computer, an information display board in a railway station or airport, an advertisement display board in a street, etc. can do.

FIG. 20A illustrates a mobile phone among mobile terminals, which includes a main body 2101, a housing 2102, a display portion 2103, an audio input portion 2104, an audio output portion 2105, operation keys 2106, an antenna 2107, and the like. The display portion 2103 is provided with a module having a pixel portion and a driver circuit portion. The pixel portion includes a light-emitting element and includes a TFT formed by the inkjet method described in the above embodiment mode. Furthermore, the cost of the mobile phone can be reduced by forming the display portion 2103 from a large mother glass substrate.

FIG. 20B illustrates a sheet-type mobile phone, which includes a main body 2301, a display portion 2303, an audio input portion 2304, an audio output portion 2305, a switch 2306, an external connection port 2307, and the like. A separately prepared earphone 2308 can be connected through the external connection port 2307. A touch panel display screen including a sensor is used for the display portion 2303, and a series of operations can be performed by touching a touch panel operation key 2309 displayed on the display portion 2303. The display portion 2303 is provided with a module having a pixel portion and a driver circuit portion. The pixel portion includes a light-emitting element and includes a TFT formed by the inkjet method described in the above embodiment mode. Further, by forming the display portion 2303 from a large mother glass substrate, the cost of the sheet-type mobile phone can be reduced.

Even in such a small electronic device, by forming the display portion using the present invention, it is possible to form multiple surfaces from a large mother glass substrate and reduce costs.

FIG. 25A shows a digital video camera, which includes a main body 2601, a display portion 2602, a housing 2603, an external connection port 2604, a remote control receiving portion 2605, an image receiving portion 2606, a battery 2607, an audio input portion 2608, operation keys 2609, and the like. Including.
The display portion 2602 is provided with a module having a pixel portion and a driver circuit portion.
The pixel portion includes a light-emitting element and includes a TFT formed by the inkjet method described in the above embodiment mode.
Furthermore, the cost of the digital video camera can be reduced by forming the display portion 2602 from a large mother glass substrate.

In particular, when taking a picture of himself / herself using the digital video camera of this embodiment mode, it is preferable to use a dual emission pixel portion.
This is because the double-sided light emitting pixel portion has a light-transmitting property and thus can check its own image without inverting the housing 2603.

For example, when the subject 2610 takes a picture of himself / herself, the video of the display portion 2602 can be displayed as shown in FIG. 25B without inverting the housing 2603.
At this time, the image of the display portion 2602 viewed from the side opposite to the subject is in a state where the image of FIG. 25B is inverted as shown in FIG.

Further, when the photographer photographs the subject 2610, the photographer and the subject 2610 can check the image on the display portion 2602 because the double-sided light emitting pixel portion has translucency. In this case, it is possible to select which one of the photographer or the subject 2610 recognizes which video in FIG. 25B or FIG.

In addition to a digital video camera, for example, when taking a picture using a digital camera, by mounting a double-sided light emitting pixel portion, it is possible to check one's own image without inverting the casing. In this case, similarly to the digital video camera shown in FIG. 25A, the housing having the display portion has a mechanism for folding, so that the housing having the display portion can be separated from the main body of the digital camera. To.

Even in the case of a digital video camera, when the photographer photographs the subject 2610, the photographer and the subject 2610 check the image on the display portion 2602 because the double-sided light emitting pixel portion has translucency. Can do.

As described above, the applicable range of the present invention is so wide that it can be used for electronic devices in various fields. In addition, any of the structures described in the above embodiments can be used for the electronic device of this example.

(Example 1)
In this example, the result of evaluating the adhesion of the conductive film when TiOx is formed as the base pretreatment is shown.

First, a Ti thin film (1 to 5 nm) is formed by a sputtering method, and heat treatment is performed to obtain TiOx. The heat treatment uses an oven and heats to 230 ° C. Thereafter, the sheet resistance of TiOx was measured, and since it was not measurable at 1 × 10 ⁶ (Ω / □) or more, it was confirmed that it had insulating properties.

Thereafter, dots containing Ag were dropped on TiOx by an ink jet method, and 16 conductive films, that is, wirings having a line length of 1 cm, a line width of 200 to 300 μm, and a height of 400 to 500 nm were drawn. Thereafter, heat treatment was performed at 230 ° C.

A tensile test was performed on the wiring. In the tensile test, a cupton tape was applied on the wiring to evaluate whether or not the wiring was peeled off. As a result, no wiring was peeled off.

Similarly, the substrate on which the wiring was formed was immersed in a 0.5% HF solution for 1 minute and washed with running water. As a result, no wiring remained without being removed.

On the other hand, when the wiring was formed without forming the TiOx film, when the wiring was immersed in the 0.5% HF solution, many wirings were removed, and only a few remained.

Further, when the wiring was formed in the same manner by TiOx by the spray method, a similar tensile test and a 0.5% HF solution immersion test were performed, but the wiring was not peeled off.

It was found that the adhesion of the wiring made of Ag was improved by performing the base pretreatment in this way.

It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. FIG. 5 is a top view illustrating a thin film transistor manufacturing apparatus according to the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. It is a circuit diagram showing a pixel circuit of a display device of the present invention. It is a top view showing a pixel of a display device of the present invention. It is sectional drawing which showed the pixel of the display apparatus of this invention. It is a top view showing a pixel of a display device of the present invention. It is sectional drawing which showed the pixel of the display apparatus of this invention. It is the figure which showed the droplet discharge apparatus of this invention. It is the figure which showed the television receiver of this invention. It is the figure which showed the electronic device of this invention. 3 is a circuit diagram illustrating a pixel protection circuit of a display device of the present invention. FIG. It is a cross-sectional view illustrating a manufacturing process of a thin film transistor of the present invention. FIG. 6 illustrates a thin film transistor manufacturing apparatus according to the present invention. It is the figure which showed the form of the dot of this invention. It is the figure which showed the digital video camera of this invention. It is the figure which showed the droplet discharge apparatus of this invention.

Claims (27)

A first transistor having a gate electrode provided in a region subjected to base pretreatment;
A second transistor having a gate electrode connected to the drain electrode of the first transistor;
An insulating film provided to cover the first and second transistors;
A first electrode of an electroluminescent layer connected to the drain electrode of the second transistor;
And a second electrode of the electroluminescent layer formed on the electroluminescent layer. A first transistor having a gate electrode formed by a droplet discharge method in a region subjected to base pretreatment;
A second transistor having a gate electrode connected to the drain electrode of the first transistor;
An insulating film provided to cover the first and second transistors;
A first electrode of an electroluminescent layer connected to the drain electrode of the second transistor;
And a second electrode of the electroluminescent layer formed on the electroluminescent layer. A first transistor having a gate electrode formed by a droplet discharge method in a region subjected to base pretreatment;
A second transistor having a gate electrode connected to the drain electrode of the first transistor;
An insulating film provided to cover the first and second transistors;
An insulating film having nitrogen provided to cover the insulating film;
A cathode of an electroluminescent layer connected to the drain electrode of the second transistor;
And an anode of an electroluminescent layer formed on the electroluminescent layer. A first transistor having a gate electrode formed by a droplet discharge method in a region subjected to base pretreatment;
A second transistor having a gate electrode connected to the drain electrode of the first transistor;
An insulating film provided to cover the first and second transistors;
An insulating film having nitrogen provided to cover the insulating film;
A cathode of an electroluminescent layer connected to the drain electrode of the second transistor;
An electroluminescent layer anode formed on the electroluminescent layer, comprising:
The display device, wherein the electroluminescent layer is laminated in order of an electron injection layer, an electron transport layer, a light emitting layer, a hole transport layer, and a hole injection layer from the cathode. In any one of Claims 1 thru | or 4,
The gate electrode, the source electrode, and the drain electrode include gold, silver, copper, platinum, palladium, tungsten, nickel, tantalum, bismuth, lead, indium, tin, zinc, titanium, or aluminum. Display device. In any one of Claims 2 thru | or 5,
The display device, wherein the droplet discharge method is an inkjet method. In any one of Claims 1 thru | or 6,
The display device, wherein the first transistor and the second transistor include an amorphous semiconductor or a semi-amorphous semiconductor. In any one of Claims 1 thru | or 7,
A scanning line is connected to the gate electrode of the first transistor;
A signal line is connected to a source electrode or a drain electrode of the first transistor;
A display device, wherein a protection circuit is provided for the scanning line and the signal line. A television receiver comprising the display device according to claim 1, wherein a display screen is configured. A first conductive film is formed by dropping a composition mixed with a conductor in a region where the base pretreatment is performed,
Forming a semiconductor film on the first conductive film;
A thin film transistor is formed by forming a second conductive film by dropping a composition mixed with a conductor on the semiconductor film subjected to the base pretreatment,
Forming a first insulating film so as to cover the thin film transistor;
Forming a first electrode on the first insulating film;
Forming a second insulating film so as to cover an end of the first electrode;
Forming an electroluminescent layer in an opening provided in the second insulating film;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. A first conductive film is formed by a droplet discharge method in a region where the base pretreatment is performed,
Forming a semiconductor film on the first conductive film;
A thin film transistor is formed by forming a second conductive film on the semiconductor film subjected to the base pretreatment by a droplet discharge method,
Forming a first insulating film so as to cover the thin film transistor;
Forming a first electrode on the first insulating film;
Forming a second insulating film so as to cover an end of the first electrode;
Forming an electroluminescent layer in an opening provided in the second insulating film;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. A gate electrode is formed by a droplet discharge method in a region where the base pretreatment is performed,
Forming a semiconductor film on the gate electrode;
Forming a mask on the semiconductor film;
Patterning the semiconductor film using the mask;
A base pretreatment is performed on the patterned semiconductor film,
A thin film transistor is formed by forming a source electrode and a drain electrode by a droplet discharge method on the semiconductor film subjected to the base pretreatment,
Forming a columnar conductive film on the source electrode or the drain electrode;
Forming a first insulating film so as to cover the columnar conductive film and the thin film transistor;
A first electrode is formed on the first insulating film so as to be connected to the columnar conductive film,
Forming a second insulating film so as to cover an end of the first electrode;
Forming an electroluminescent layer in the opening provided in the second insulating film by a droplet discharge method;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. A gate electrode is formed by a droplet discharge method in a region where the base pretreatment is performed,
Forming a semiconductor film on the gate electrode;
Forming a mask on the semiconductor film;
Patterning the semiconductor film using the mask;
A base pretreatment is performed on the patterned semiconductor film,
A thin film transistor is formed by forming a source electrode and a drain electrode by a droplet discharge method on the semiconductor film subjected to the base pretreatment,
Forming a first insulating film so as to cover the thin film transistor;
Forming a contact hole in the first insulating film on the source electrode or the drain electrode;
Forming a columnar conductive film in the contact hole;
Forming a first electrode so as to connect to the columnar conductive film;
Forming a second insulating film so as to cover an end of the first electrode;
Forming an electroluminescent layer in the opening provided in the second insulating film by a droplet discharge method;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. In claim 13,
A mask is formed on the first insulating film by a droplet discharge method,
A method for manufacturing a display device, wherein a contact hole is formed in the first insulating film by an etching method using the mask. A gate electrode is formed by a droplet discharge method in a region where the base pretreatment is performed,
Forming a semiconductor film on the gate electrode;
Forming a mask on the semiconductor film;
Patterning the semiconductor film using the mask;
A base pretreatment is performed on the patterned semiconductor film,
A thin film transistor is formed by forming a source electrode and a drain electrode by a droplet discharge method on the semiconductor film subjected to the base pretreatment,
Forming a first insulating film so that an opening is formed on the source electrode or the drain electrode;
Forming a first electrode in the opening of the first insulating film;
Forming a second insulating film so as to cover a part of the first electrode;
Forming an electroluminescent layer in the opening provided in the second insulating film by a droplet discharge method;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. A gate electrode is formed by a droplet discharge method in a region where the base pretreatment is performed,
Forming a semiconductor film on the gate electrode;
Forming a mask on the semiconductor film;
Patterning the semiconductor film using the mask;
A base pretreatment is performed on the patterned semiconductor film,
A thin film transistor is formed by forming a source electrode and a drain electrode by a droplet discharge method on the semiconductor film subjected to the base pretreatment,
A columnar organic film is formed on the source electrode or the drain electrode,
Forming a first insulating film so as to cover the columnar organic film and the thin film transistor;
Removing the columnar organic film,
On the first insulating film, a first electrode is formed so as to be connected to the source electrode or the drain electrode,
Forming a second insulating film so as to cover an end of the first electrode;
Forming an electroluminescent layer in the opening provided in the second insulating film by a droplet discharge method;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. In claim 16,
The method for manufacturing a display device, wherein the first insulating film has liquid repellency with respect to the columnar organic film. In claim 16 or 17,
A method for manufacturing a display device, wherein the columnar organic film is removed by washing with water. A gate electrode is formed by a droplet discharge method in a region where the base pretreatment is performed,
Forming a semiconductor film on the gate electrode;
Forming a mask on the semiconductor film;
Patterning the semiconductor film using the mask;
A base pretreatment is performed on the patterned semiconductor film,
A thin film transistor is formed by forming a source electrode and a drain electrode by a droplet discharge method on the semiconductor film subjected to the base pretreatment,
Forming an organic film having liquid repellency with respect to the first insulating film on the surface of the thin film transistor;
Forming a mask on the source or drain electrode;
The organic film is removed using the mask,
After removing the mask, by forming the first insulating film, an opening is formed in the first insulating film in a region on the mask,
Forming a first electrode in the opening so as to be connected to the source electrode or the drain electrode;
Forming a second insulating film so as to cover a part of the first electrode;
Forming an electroluminescent layer in the opening provided in the second insulating film by a droplet discharge method;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. In any one of Claims 12 thru | or 19,
A method for manufacturing a display device, wherein a channel protective film is formed in contact with the semiconductor film over the gate electrode. A source electrode and a drain electrode are formed by a droplet discharge method in a region where the base pretreatment is performed,
Forming a semiconductor film on the source electrode and the drain electrode;
Forming a mask on the semiconductor film;
Patterning the semiconductor film using the mask;
A base pretreatment is performed on the patterned semiconductor film,
A thin film transistor is formed by forming a gate electrode on the semiconductor film subjected to the base pretreatment by a droplet discharge method,
Forming a columnar conductive film on the source electrode or the drain electrode;
Forming a first insulating film so as to cover the columnar conductive film and the thin film transistor;
A first electrode is formed on the first insulating film so as to be connected to the columnar conductive film,
Forming a second insulating film so as to cover an end of the first electrode;
Forming an electroluminescent layer in the opening provided in the second insulating film by a droplet discharge method;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. Forming the gate electrodes of the first and second transistors by a droplet discharge method in the region subjected to the base pretreatment,
Forming a semiconductor film on the gate electrode through a gate insulating film;
The base film is pretreated on the semiconductor film,
Forming a source electrode and a drain electrode of the first and second transistors on the semiconductor film on which the base pretreatment has been performed by a droplet discharge method;
Etching the gate insulating film forms a contact hole for connecting the source or drain electrode of the first transistor and the gate electrode of the second transistor,
A thin film transistor is formed by forming a conductive film in the contact hole by a droplet discharge method,
Forming a columnar conductive film on the source electrode or the drain electrode of the second transistor;
Forming a first insulating film so as to cover the columnar conductive film and the first and second transistors;
A first electrode is formed on the first insulating film so as to be connected to the columnar conductive film,
Forming a second insulating film so as to cover an end of the first electrode;
Forming an electroluminescent layer in an opening provided in the second insulating film;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. Forming the gate electrodes of the first and second transistors by a droplet discharge method in the region subjected to the base pretreatment,
Forming a semiconductor film on the gate electrode through a gate insulating film;
Patterning the semiconductor film;
Forming a gate insulating film so as to cover the patterned semiconductor film;
A base pretreatment is performed on the patterned semiconductor film,
Forming a source electrode and a drain electrode of the first and second transistors on the semiconductor film on which the base pretreatment has been performed by a droplet discharge method;
A contact hole for connecting the source or drain electrode of the first transistor and the gate electrode of the second transistor is formed by etching the gate insulating film using the source and drain electrodes. Forming,
A thin film transistor is formed by forming a conductive film in the contact hole by a droplet discharge method,
Forming a columnar conductive film on the source electrode or the drain electrode of the second transistor;
Forming a first insulating film by a droplet discharge method so as to cover the columnar conductive film and the first and second transistors;
A first electrode is formed on the first insulating film so as to be connected to the columnar conductive film,
Forming a second insulating film so as to cover an end of the first electrode;
Forming an electroluminescent layer in the opening provided in the second insulating film by a droplet discharge method;
A method for manufacturing a display device, comprising forming a second electrode so as to cover the electroluminescent layer. 24. The method for manufacturing a display device according to claim 10, wherein the surface of the first insulating film is planarized by spraying a gas. A first processing chamber for discharging droplets;
Using a processing apparatus in which a second processing chamber for performing a planarization process is disposed,
In the first processing chamber, a conductive film and an insulating film are formed by a droplet discharge method in a region where the pretreatment of the object to be processed is performed,
Transporting the object to be processed to the second processing chamber without being exposed to the atmosphere;
A method for manufacturing a display device, characterized in that planarization treatment is performed on the conductive film and the insulating film in the second treatment chamber. 26. The method for manufacturing a display device according to claim 10, wherein the electroluminescent layer is formed by a droplet discharge method. 27. Any one of claims 10 to 26.
A method for manufacturing a display device, wherein the droplet discharge method is an inkjet method.

Images