JP2005179167A5 - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2005179167A5
JP2005179167A5 JP2004002352A JP2004002352A JP2005179167A5 JP 2005179167 A5 JP2005179167 A5 JP 2005179167A5 JP 2004002352 A JP2004002352 A JP 2004002352A JP 2004002352 A JP2004002352 A JP 2004002352A JP 2005179167 A5 JP2005179167 A5 JP 2005179167A5
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thin film
semiconductor device
film layer
sintered body
single crystal
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JP2004002352A
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JP2005179167A (en
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Priority to JP2004002352A priority Critical patent/JP2005179167A/en
Priority claimed from JP2004002352A external-priority patent/JP2005179167A/en
Publication of JP2005179167A publication Critical patent/JP2005179167A/en
Publication of JP2005179167A5 publication Critical patent/JP2005179167A5/en
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Claims (17)

窒化ガリウム、窒化インジウム、及び窒化アルミニウムから選ばれた少なくとも１種以上を主成分とする単結晶あるいは単結晶層を少なくとも含む薄膜がセラミック材料を主成分とする焼結体に形成される半導体素子であって、前記薄膜は無定形薄膜層及び多結晶薄膜層から選ばれたいずれかを少なくとも有するものであることを特徴とする半導体素子。   A semiconductor element in which a thin film containing at least a single crystal or a single crystal layer mainly composed of at least one selected from gallium nitride, indium nitride and aluminum nitride is formed into a sintered body mainly composed of a ceramic material A semiconductor device characterized in that the thin film comprises at least one selected from an amorphous thin film layer and a polycrystalline thin film layer. 前記薄膜は、単結晶を少なくとも含む薄膜層と、無定形薄膜層及び多結晶薄膜層から選ばれたいずれかの薄膜層とを少なくとも有するものであることを特徴とする請求項１に記載された半導体素子。   The film according to claim 1, wherein the thin film comprises at least a thin film layer containing at least a single crystal, and any thin film layer selected from an amorphous thin film layer and a polycrystalline thin film layer. Semiconductor device. 前記単結晶を少なくとも含む薄膜層は、ロッキングカーブの半値幅が３６００秒以下であることを特徴とする請求項２に記載された半導体素子。   3. The semiconductor device according to claim 2, wherein a half width of a rocking curve of the thin film layer containing at least the single crystal is 3600 seconds or less. 前記無定形薄膜層あるいは多結晶薄膜層は、前記セラミック材料を主成分とする焼結体に直接形成されるものであることを特徴とする請求項１又は２に記載された半導体素子。   3. The semiconductor device according to claim 1, wherein the amorphous thin film layer or the polycrystalline thin film layer is formed directly on a sintered body containing the ceramic material as a main component. 前記無定形薄膜層あるいは多結晶薄膜層は、ロッキングカーブの半値幅が３６００秒以上であることを特徴とする請求項１、２、又は４に記載された半導体素子。   5. The semiconductor device according to claim 1, wherein a half width of a rocking curve of the amorphous thin film layer or the polycrystalline thin film layer is 3600 seconds or more. 前記ロッキングカーブは、２θ／θスキャン、あるいはωスキャンの少なくともいずれかにより測定されるものであることを特徴とする請求項３又は５に記載された半導体素子。   The semiconductor device according to claim 3, wherein the rocking curve is measured by at least one of 2θ / θ scan and ω scan. 前記スキャンは、（００２）面での回折を用いて行われることを特徴とする請求項６に記載された半導体素子。   7. The semiconductor device according to claim 6, wherein the scan is performed using diffraction on a (002) plane. 前記焼結体は、（ａ）平均粒子径が０．５μｍ以上、（ｂ）平均気孔径が１μｍ以下、（ｃ）平均表面粗さが２０００ｎｍ以下、あるいは（ｄ）相対密度が９５％以上、から選ばれた少なくともいずれかであることを特徴とする請求項１又は４に記載された半導体素子。   The sintered body has (a) an average particle diameter of 0.5 μm or more, (b) an average pore diameter of 1 μm or less, (c) an average surface roughness of 2000 nm or less, or (d) a relative density of 95% or more. The semiconductor device according to claim 1 or 4, which is at least one selected from the group consisting of 窒化ガリウム、窒化インジウム、及び窒化アルミニウムから選ばれた少なくとも１種以上を主成分とする単結晶あるいは単結晶層を少なくとも含む薄膜がセラミック材料を主成分とする焼結体に緊密に接着されることを特徴とする半導体素子。   A thin film including at least a single crystal or a single crystal layer mainly composed of at least one selected from gallium nitride, indium nitride and aluminum nitride is closely adhered to a sintered body mainly composed of a ceramic material Semiconductor device characterized by 前記焼結体は、（ａ）平均粒子径が０．５μｍ以上、（ｂ）平均気孔径が１μｍ以下、（ｃ）平均表面粗さが２０００ｎｍ以下、及び（ｄ）相対密度が９５％以上、から選ばれた少なくともいずれかであることを特徴とする請求項９に記載された半導体素子。   The sintered body has (a) an average particle diameter of 0.5 μm or more, (b) an average pore diameter of 1 μm or less, (c) an average surface roughness of 2000 nm or less, and (d) a relative density of 95% or more. The semiconductor device according to claim 9, wherein the semiconductor device is at least one selected from the group consisting of 前記焼結体は、薄膜導電性材料を有するものであることを特徴とする請求項９又は１０に記載された半導体素子。   11. The semiconductor element according to claim 9, wherein the sintered body comprises a thin film conductive material. 前記薄膜導電性材料は、金属、合金、金属窒化物、金属炭化物、及び金属珪化物から選ばれた少なくともいずれかを主成分とするものであることを特徴とする請求項１１に記載された半導体素子。   12. The semiconductor according to claim 11, wherein the thin film conductive material contains at least one selected from metals, alloys, metal nitrides, metal carbides, and metal silicides as main components. element. 前記薄膜は、前記焼結体に２Ｋｇ／ｍｍ２以上の強度で接着されることを特徴とする請求項９、１０、又は１１に記載された半導体素子。 12. The semiconductor device according to claim 9, wherein the thin film is bonded to the sintered body with a strength of 2 kg / mm 2 or more. 前記薄膜は、ロッキングカーブの半値幅が３６００秒以下であることを特徴とする請求項９又は１３に記載された半導体素子。   14. The semiconductor device according to claim 9, wherein a half width of a rocking curve of the thin film is 3600 seconds or less. 前記ロッキングカーブは、２θ／θスキャン、あるいはωスキャンの少なくともいずれかにより測定されるものであることを特徴とする請求項１４に記載された半導体素子。   The semiconductor device according to claim 14, wherein the rocking curve is measured by at least one of 2θ / θ scan and ω scan. 前記半導体素子は、紫外線あるいは可視光線のうち少なくともいずれかを発するものであることを特徴とする請求項９、１０、１１、１２、１３、１４、又は１５に記載された半導体素子。   The semiconductor device according to any one of claims 9, 10, 11, 12, 13, 14 or 15, wherein the semiconductor device emits at least one of ultraviolet light and visible light. 前記可視光線は、白色であることを特徴とする請求項１６に記載された半導体素子。
The semiconductor device according to claim 16, wherein the visible light is white.
JP2004002352A 2003-06-30 2004-01-07 Substrate for forming thin film, thin film substrate and light emitting element Pending JP2005179167A (en)

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JP2003186175 2003-06-30
JP2003294259 2003-08-18
JP2003396236 2003-11-26
JP2004002352A JP2005179167A (en) 2003-06-30 2004-01-07 Substrate for forming thin film, thin film substrate and light emitting element

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JP2005179167A5 true JP2005179167A5 (en) 2008-07-17

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JP5054902B2 (en) * 2005-08-03 2012-10-24 国立大学法人東京農工大学 Manufacturing method of AlN semiconductor
JP2007254190A (en) * 2006-03-22 2007-10-04 Ngk Insulators Ltd Aluminum nitride sintered compact, method of manufacturing aluminum nitride, and member
JP2011077101A (en) * 2009-09-29 2011-04-14 Toyoda Gosei Co Ltd Semiconductor element and group iii nitride compound semiconductor element
JP2011077102A (en) * 2009-09-29 2011-04-14 Toyoda Gosei Co Ltd Wafer, group iii nitride compound semiconductor element, and methods of manufacturing them
CN103608313B (en) * 2011-07-14 2016-03-02 联合材料公司 AlN substrate and manufacture method thereof
JP5585570B2 (en) * 2011-12-01 2014-09-10 住友電気工業株式会社 Sintered body mainly composed of mullite
JP5942483B2 (en) * 2012-03-02 2016-06-29 住友電気工業株式会社 Support substrate manufacturing method, support substrate, and semiconductor wafer manufacturing method
JP6094243B2 (en) * 2013-02-07 2017-03-15 住友電気工業株式会社 Composite substrate and method for manufacturing semiconductor wafer using the same
JP6444207B2 (en) * 2015-02-17 2018-12-26 株式会社ディスコ Inspection method and inspection apparatus for hexagonal single crystal substrate
CN116837463A (en) * 2023-06-20 2023-10-03 中国科学院上海微系统与信息技术研究所 Preparation method of modulation device based on silicon carbide and modulation device

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JP3220315B2 (en) * 1993-12-22 2001-10-22 京セラ株式会社 Covering member
JPH08186329A (en) * 1994-12-28 1996-07-16 Japan Energy Corp Growth method of gallium nitride-based semiconductor crystal
JP3410863B2 (en) * 1995-07-12 2003-05-26 株式会社東芝 Compound semiconductor device and compound semiconductor light emitting device
JPH09172199A (en) * 1995-12-20 1997-06-30 Mitsubishi Cable Ind Ltd Gallium nitride compound semiconductor chip

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