JP2005166941A - Light emitting device, its manufacturing method, lighting module using the same, and lighting equipment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting device and its manufacturing method with a high light extraction efficiency, thereby providing a lighting module and a lighting equipment with a high optical output by use of the light emitting device. <P>SOLUTION: The light emitting device 1 comprises a light emitting element 2 and a translucent material 3 covering the light emitting element 2, and outputs a light from a surface 4 on which the translucent material 3 comes into contact with the outside. In the light emitting device 1, the surface 4 on which the translucent material 3 comes into contact with the outside has an unevenness containing at least one shape selected from a substantially pyramidal shape or a substantially conical shape. Further, the method for manufacturing the light emitting device contains the steps of forming the unevenness on a surface of a monocrystal substrate, and using the surface of the monocrystal substrate formed with the unevenness as a die to form the translucent material, thereby forming the unevenness on the surface of the translucent material. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a light emitting device, a manufacturing method thereof, and an illumination module and an illumination device using the light emitting device.

  Conventionally, light emitting elements such as light emitting diodes have been used for displays and the like in various electronic devices. Recently, so-called white light emitting diodes (white LEDs) that obtain white light by combining light emitting diodes and phosphors have attracted attention. Such a white LED can be used as a light emitting device, and an illumination module and an illumination device can be provided by using a plurality of the light emitting devices.

  In a conventional light-emitting device using a light-emitting element, a light-emitting element is provided on a substrate made of ceramic or the like on which external connection electrodes are formed, and a light-transmitting resin is disposed on the light-emitting surface side of the light-emitting element. The structure is such that the light-sensitive resin outputs light from the surface in contact with the outside world. In this conventional light emitting device, the surface of the translucent resin is flat and smooth.

However, in the conventional light emitting device, as shown in FIG. 5, when the light emitted from the light emitting element 51 is incident on the surface 53 of the translucent resin 52 at an angle β equal to or greater than the critical angle, the light is totally reflected on the surface 53. Therefore, the light extraction efficiency was poor. For example, when a translucent resin having a refractive index of 1.5 is used and the outside is air having a refractive index of 1, the critical angle θ is 48 °, and a maximum of 17 of the emitted light is calculated from the solid angle. Only% is output to the outside world. In order to solve this problem, it has been proposed to roughen the surface of the translucent resin (see, for example, Patent Document 1). By roughening the surface of the translucent resin, light can be extracted regardless of the incident angle of light.
JP-A-11-204840

  By roughening the surface of the translucent resin as described in Patent Document 1, light can be extracted to some extent regardless of the incident angle of light. However, if the surface of the translucent resin is simply roughened, light is scattered and sufficient light extraction efficiency cannot always be obtained. This reduction in take-out efficiency becomes a greater problem when a lighting device is manufactured by modularizing a plurality of light emitting devices. That is, when a lighting device is manufactured using a conventional light emitting diode or the like as a light emitting element, it is difficult to obtain a light output necessary for the lighting device due to low light extraction efficiency.

  The present invention has been made to solve such a problem, and provides a light emitting device with high light extraction efficiency and a method for manufacturing the same, thereby providing an illumination module having a high light output using the light emitting device. And a lighting device.

  The present invention is a light-emitting device that includes a light-emitting element and a light-transmitting material that covers the light-emitting element, and the light-transmitting material outputs light from a surface that is in contact with the outside. Provided is a light emitting device characterized in that a surface in contact with the surface includes at least one shape selected from a substantially pyramid shape and a substantially conical shape.

  In addition, the present invention is a method for manufacturing a light-emitting device comprising a light-emitting element and a light-transmitting material that covers the light-emitting element, and the surface where the light-transmitting material is in contact with the outside has unevenness, and includes a single crystal substrate Forming irregularities on the surface of the transparent material and forming irregularities on the surface of the translucent material by forming the translucent material using the surface of the single crystal substrate as a mold. A method for manufacturing a light emitting device is provided.

  In addition, the present invention is a method for manufacturing a light-emitting device comprising a light-emitting element and a light-transmitting material that covers the light-emitting element, and the surface where the light-transmitting material is in contact with the outside has unevenness, and includes a single crystal substrate Forming a light-transmitting material using a step of forming irregularities on the surface of the substrate, a step of transferring irregularities on the surface of the single crystal substrate to a metal substrate, and a surface of the metal substrate onto which the irregularities have been transferred as a mold. By this, the manufacturing method of the light-emitting device characterized by including the process of forming an unevenness | corrugation in the surface of the said translucent material is provided.

  The present invention also provides an illumination module using a plurality of the light emitting devices.

  Moreover, this invention provides the illuminating device characterized by using the said illumination module.

  The light-emitting device of the present invention can extract light regardless of the angle of incidence of light on the light extraction surface, can prevent light scattering, and can improve light extraction efficiency. In addition, according to the method for manufacturing a light emitting device of the present invention, irregularities that do not cause light scattering can be easily formed on the light extraction surface of the light emitting device. Furthermore, since the lighting module and the lighting device of the present invention use a light emitting device with high light extraction efficiency, it has a high light output.

  Embodiments of the present invention will be described below.

  First, an embodiment of the light emitting device of the present invention will be described. An example of the light-emitting device of the present invention is a light-emitting device that includes a light-emitting element and a light-transmitting material that covers the light-emitting element, and in which the light-transmitting material outputs light from a surface in contact with the outside. The surface where the conductive material is in contact with the outside is provided with unevenness including at least one shape selected from a substantially pyramid shape and a substantially conical shape.

  By forming irregularities including at least one shape selected from a substantially pyramid shape and a substantially conical shape on the surface where the translucent material is in contact with the outside world, the light emitted from the light emitting element is transmitted as shown in FIG. Even if it is incident on the surface 42a of the light-sensitive material 41 at an angle β equal to or greater than the critical angle and totally reflected, it will be incident on the next surface 42b at an angle α equal to or less than the critical angle. The light is output from the surface of the light-sensitive material 41 to the outside, and the light extraction efficiency is significantly improved.

  The interval between the irregularities is preferably 1 μm or more and 100 μm or less, and more preferably 1 μm or more and 10 μm or less. The uneven | corrugated space | interval in this specification means the space | interval (L of FIG. 4) between the vertex of the convex part of an unevenness | corrugation, and the vertex of the other convex part adjacent to the convex part. If this interval is less than 1 μm, light interference may occur, and it is difficult to produce substantially pyramid or substantially conical irregularities with this interval less than 1 μm. In addition, if the distance exceeds 100 μm, the depth of the unevenness becomes too large, and manufacturing is difficult.

  The light-emitting element is a photoelectric conversion element that converts electrical energy into light, and examples thereof include a light-emitting diode, a laser diode, a surface-emitting laser diode, an inorganic electroluminescence element, and an organic electroluminescence element. In particular, from the viewpoint of increasing the output of the light source, semiconductor light emitting elements such as light emitting diodes, laser diodes, and surface emitting laser diodes are preferable. Moreover, white LED can also be comprised by combining a semiconductor light-emitting device and fluorescent substance.

  Next, an embodiment of a method for manufacturing a light emitting device of the present invention will be described. An example of a method for manufacturing a light-emitting device according to the present invention is a method for manufacturing a light-emitting device that includes a light-emitting element and a light-transmitting material that covers the light-emitting element, and the surface where the light-transmitting material is in contact with the outside has unevenness. A step of forming irregularities on the surface of the single crystal substrate, and forming the translucent material using the surface of the single crystal substrate on which the irregularities have been formed as a mold, thereby forming the surface of the translucent material And a step of forming irregularities.

  Although it has been difficult to produce a mold having irregularities with intervals of several μm on the surface by conventional cutting, by forming irregularities on the surface of a single crystal substrate, irregularities with intervals of 1 μm to 100 μm are formed on the surface. It becomes easy to produce the metal mold | die which has. Further, the unevenness can be easily formed on the surface of the translucent material using the mold having the unevenness.

  Another example of the method for manufacturing a light-emitting device of the present invention includes a light-emitting element and a light-transmitting material that covers the light-emitting element, and a light-emitting device that has unevenness on a surface in contact with the outside of the light-transmitting material. A method of forming irregularities on a surface of a single crystal substrate, a step of transferring irregularities on the surface of the single crystal substrate to a metal substrate, and a surface of the metal substrate to which the irregularities are transferred as a mold. And forming a concavo-convex on the surface of the translucent material by molding the translucent material.

  By transferring unevenness on the surface of the single crystal substrate to a metal substrate to form a mold, the durability of the mold can be improved.

  As a method for forming irregularities on the surface of the single crystal substrate, an anisotropic etching method or a plasma CVD method is preferable. This is because substantially anisotropic pyramidal irregularities can be formed by the anisotropic etching method, and substantially conical irregularities can be formed by the plasma CVD method.

  As the single crystal substrate, an n-type semiconductor substrate such as a Si substrate, a GaN-based substrate, or a GaAs-based substrate can be used.

  Next, an embodiment of the illumination module of the present invention will be described. An example of the illumination module of the present invention is characterized by using a plurality of the light emitting devices described above. By combining a plurality of light emitting devices with high light extraction efficiency, an illumination module having high light output can be provided.

  Next, an embodiment of the illumination device of the present invention will be described. An example of the illumination device of the present invention is characterized by using the illumination module described above. By using an illumination module in which a plurality of light emitting devices with high light extraction efficiency are combined, an illumination device having high light output can be provided.

  Next, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
FIG. 1 is a cross-sectional view showing an example of a light emitting device of the present invention. The light emitting device 1 of the present embodiment includes a light emitting element 2 and a translucent material 3 that covers the light emitting element 2, and the translucent material 3 outputs light from a surface 4 that is in contact with the outside. The light-emitting element 2 is, for example, a semiconductor light-emitting element, and is a base material 7 (for example, a translucent resin or low-melting glass) that is conductively mounted on a submount 5 made of silicon or the like and that contains a phosphor 6. It is sealed. On the substrate 8 made of aluminum or the like, connection electrodes 10a and 10b are provided via a composite material layer 9 made of an inorganic material such as alumina and an organic material such as resin. 11 and the connection electrode 10b and the submount 5 are directly connected.

  FIG. 2 is an enlarged perspective view of the surface 4 where the translucent material 3 is in contact with the outside world, and FIG. 3 is an enlarged plan view of the surface 4 where the translucent material 3 is in contact with the outside world. As shown in FIG. 2 and FIG. 3, substantially pyramidal irregularities 12 are formed on the surface 4 at intervals of 1 to 100 μm, more preferably at intervals of 1 to 10 μm.

  The light emitting element 2 is a light emitting diode, for example, and can obtain white light in combination with the phosphor 6. The wavelength of light emitted from the light emitting element 2 is not particularly limited as long as it is within a wavelength range in which the phosphor 6 can be excited. The phosphor 6 absorbs part or all of the light emitted by the light emitting element 2 by driving, and visible light (blue, green, yellow, orange, or longer than the peak wavelength of the light emitted by the light emitting element 2). Since the phosphor 6 is excited by the light emitting element 2, the entire light emitting element 2 emits light including a light emitting component emitted by the phosphor 6. Therefore, for example, in a light emitting device having a combination structure as described below, white light is obtained due to a color mixture of light emitted from the light emitting element 2 and light emitted from the phosphor 6, and white light having a high demand is emitted. It can be a light source.

  (1) A structure formed by combining a light emitting element that emits near-ultraviolet light, a blue phosphor, a green phosphor, and a red phosphor.

  (2) A structure formed by combining a light emitting element that emits near-ultraviolet light, a blue phosphor, a green phosphor, a yellow phosphor, and a red phosphor.

  (3) A structure formed by combining a light emitting element that emits near-ultraviolet light, a blue phosphor, a yellow phosphor, and a red phosphor.

  (4) A structure formed by combining a light emitting element that emits blue light, a green phosphor, a yellow phosphor, and a red phosphor.

  (5) A structure formed by combining a light emitting element that emits blue light, a yellow phosphor, and a red phosphor.

  (6) A structure formed by combining a light emitting element that emits blue light, a green phosphor, and a red phosphor.

  (7) A structure formed by combining a light emitting element that emits blue-green light and a red phosphor.

  Further, around the light emitting element 2, a reflecting plate 13 having a reflecting surface 13 a subjected to a mirror finish is provided. Further, the composite material layer 9 is disposed between the connection electrodes 10 a and 10 b and the reflection plate 13.

  As the translucent material 3, a translucent resin such as an epoxy resin or a silicon resin, or a low-melting glass can be used.

(Embodiment 2)
FIG. 6 is a process cross-sectional view illustrating an example of forming irregularities on the surface of a single crystal substrate which is a part of the method for manufacturing a light emitting device of the present invention. In this embodiment, by performing anisotropic etching on a silicon substrate having a plane orientation of (100), a substantially pyramid-shaped unevenness is formed on the surface of the silicon substrate, and the surface of the silicon substrate on which the unevenness is formed is made of gold. By using it as a mold, a substantially pyramid-shaped unevenness is formed on the surface of the light extraction surface of the light emitting device.

  First, as shown in FIG. 6A, a silicon substrate 62 whose surface 61 is a (100) plane is prepared, and as shown in FIG. 6B, a lattice-like mask 63 is formed on the silicon substrate 62. Form. As a material of the mask 63, silicon oxide, silicon nitride, aluminum oxide, or the like can be used.

  The mask 63 can be formed by a method usually used in a semiconductor manufacturing process. For example, in order to form the silicon oxide mask 63, the surface of the silicon substrate 62 is thermally oxidized, a photoresist is applied, and the photoresist is patterned into the shape of the mask 63 by photolithography. Next, the silicon oxide is etched and finally the photoresist is removed. This etching can be easily realized by using an etching solution of hydrogen fluoride.

  Next, anisotropic etching is performed on the silicon substrate 62 as shown in FIG. As the anisotropic etching solution, potassium hydroxide, sodium hydroxide, pyrocatechol, ethylenediamine, or the like can be used.

  By anisotropic etching, as shown in FIG. 6D, a substantially pyramid-shaped unevenness 64 made of a (111) plane is formed on the surface 61 of the silicon substrate 62. The interval between the irregularities 64 can be controlled by controlling the etching time according to the etching rate of the anisotropic etching solution. Further, the etching rate of the anisotropic etching solution can be easily adjusted by adjusting the temperature and concentration of the anisotropic etching solution. Further, the etching rate can be adjusted by irradiating the etching surface with light or by passing a current between the etching surface and the etching solution. The interval between the irregularities 64 is preferably 1 μm or more and 100 μm or less. In addition, by performing anisotropic etching using the mask 63, the depth of the irregularities 64 can be made constant.

  Finally, as shown in FIG. 6E, the mask 63 is removed, whereby a substantially pyramid-shaped unevenness 64 is formed on the surface 61 of the silicon substrate 62. Note that the mask 63 can be removed by etching using an etching solution corresponding to the mask material (for example, when the mask material is silicon oxide, a hydrogen fluoride-based etching solution).

  Subsequently, when the light extraction surface of the light-emitting device is manufactured by a usual method, the light-emitting element light is formed by molding the translucent material using the unevenness 64 of the silicon substrate 62 formed as a mold. Irregularities having a substantially pyramid shape can be formed on the surface of the extraction surface. In other respects, the light emitting device can be manufactured by a commonly performed method.

  The translucent material can be used without particular limitation as long as it is a translucent material having a melting point lower than that of the silicon substrate. For example, a translucent resin such as an epoxy resin or a silicone resin, or a low-melting glass is used. Can be used.

  In this embodiment, the anisotropic etching method using a mask has been described. However, it is possible to form a substantially pyramid-shaped unevenness without using a mask, and in this case, the depth and interval of the unevenness are slightly different. Variation occurs. However, even if the unevenness depth of the light extraction surface of the light emitting device is not constant, there is no significant problem from the viewpoint of light extraction efficiency. In addition, since there is no light interference when there are variations in the depth and interval of the irregularities, the interval between the irregularities can be reduced to about the visible light wavelength.

(Embodiment 3)
FIG. 7 is a process cross-sectional view illustrating an example of forming irregularities on the surface of a metal substrate that is a part of the method for manufacturing a light emitting device of the present invention. In the present embodiment, the surface of the silicon substrate manufactured in Embodiment 2 is used to form substantially pyramid-shaped irregularities on the surface of the metal substrate, and the surface of the metal substrate on which the irregularities are formed is used as a mold. A substantially pyramid-shaped unevenness is formed on the surface of the light extraction surface of the apparatus.

  First, as shown in FIG. 7A, a hard metal layer 73 is vapor-deposited on the surface of the silicon substrate 72 formed with the substantially pyramidal irregularities 71 produced in the second embodiment. Further, a soft metal layer 74 a is deposited on the hard metal layer 73. For example, platinum (Pt) can be used as the hard metal, and gold (Au) can be used as the soft metal.

  Next, as shown in FIG. 7B, a support 76 is prepared by depositing a soft metal layer 74b made of Au or the like on the surface of a base metal 75 made of stainless steel or the like, and the soft metal layers 74a and 74b are prepared. The metal substrate precursor 77 is formed as shown in FIG. 7C.

  Finally, as shown in FIG. 7D, by removing the silicon substrate 72, a metal substrate 79 having a substantially pyramid-shaped unevenness 78 transferred on the surface is obtained.

  Subsequently, when the light extraction surface of the light emitting device is manufactured by a usual method, the light extraction surface of the light emitting element is formed by molding the translucent material using the unevenness of the metal substrate formed as a mold. A substantially pyramid-shaped unevenness can be formed on the surface. In other respects, the light emitting device can be manufactured by a commonly performed method.

(Embodiment 4)
In the second embodiment, an example in which a substantially pyramid-shaped unevenness is formed on the surface of the silicon substrate using the anisotropic etching method has been described. However, a substantially conical unevenness is formed on the surface of the silicon substrate by using the plasma CVD method. Can be formed.

That is, a cathode is formed by adhering iron fine particles to a silicon substrate by direct current discharge in an argon (Ar) atmosphere, and then CH ₄ (80%) / H ₂ (20%) gas is used as the cathode. By performing direct current / microwave superimposed discharge, nano-sized substantially conical irregularities can be formed on the surface of the silicon substrate.

  Thereafter, the light emitting device can be manufactured in the same manner as in the second embodiment.

(Embodiment 5)
The surface of the silicon substrate manufactured in Embodiment 4 is used to transfer substantially conical irregularities on the surface of the metal substrate, and the surface of the metal substrate on which the irregularities are formed is used as a mold, so that the light extraction surface of the light-emitting device can be obtained. A substantially conical unevenness can be formed on the surface of the substrate. In other respects, the light emitting device can be manufactured by a commonly performed method.

(Embodiment 6)
FIG. 8 is a perspective view showing an example of the illumination module of the present invention. 9 is a plan view (a) of the illumination module shown in FIG. 8, an AA sectional view (b) of the plan view (a), and an enlarged view (c) of a main part of the AA sectional view (b). It is. The illumination module 81 of the present embodiment includes an extraction electrode 83 and a light emitting device 84 similar to the light emitting device 1 described in the first embodiment on a multilayer substrate 82. Reference numeral 82a denotes a cutout portion of the multilayer substrate 82. For example, 31 light emitting devices 84 are connected in series to form a unit, and 7 units are connected in parallel, so that 217 light emitting devices 84 can be electrically connected to each other. The drive voltage of the illumination module 81 is, for example, 100V, and the drive current is, for example, 350 mA. Since the illumination module of the present embodiment includes a plurality of light emitting devices similar to the light emitting device of the first embodiment, the light extraction efficiency is high and the light output is high. In addition, since the light-emitting device 84 of this embodiment is the same structure as the light-emitting device 1 of FIG. 1 demonstrated in Embodiment 1, in FIG.9 (c), the code | symbol similar to FIG. 1 is attached | subjected and the description is given. Omitted.

  10 is a plan view (a) in a state in which the power generation device 84 is removed from the multilayer substrate 82 in FIG. 9, and an enlarged view of a portion B in the plan view (a). Connection electrodes 85a and 85b are provided on the multilayer substrate 82, and leads 86 are connected to the connection electrodes 85a and 85b. By mounting the light emitting device 84 on the connection electrodes 85a and 85b, the light emitting devices 84 can be connected to each other.

(Embodiment 7)
FIG. 11 is a perspective view (a) showing an example of the illumination device of the present invention, and a bottom view (b) thereof. The lighting device 111 according to the present embodiment includes the instrument 112 and the lighting module 113 described in the sixth embodiment. Since the illumination device 111 includes the illumination module 113 according to the sixth embodiment, the light extraction efficiency is high and the light output is high.

  12 is a perspective view of the socket portion of the lighting module of the lighting device of FIG. The illumination module 113 includes a notch 114 and an extraction electrode 115, and the socket 116 includes a module mounting surface 117, a flexible terminal 118, and a guide protrusion 119. The illumination module 113 is mounted on the module mounting surface 117 by fitting with the guide convex portion 119. Thereby, the extraction electrode 115 and the flexible terminal 118 are electrically connected. Thereafter, the illumination module 113 is fixed by the ring screw 122 through the O-ring 121. With this structure, the illumination module 113 can be easily attached and detached.

  Next, this invention is demonstrated based on an Example. However, the present invention is not limited to the following examples.

(Example 1)
A light emitting device having a structure similar to that of FIG. 1 is formed using a blue light emitting GaN light emitting diode as the light emitting element 1, (Sr, Ba) ₂ SiO ₄ : Eu ²⁺ as the phosphor 6, and an epoxy resin as the light transmissive material 3. It was produced by the same method as in Embodiment 2. 50 light emitting devices 1 were connected in series, and seven of these 50 were connected in parallel to produce an illumination module having the same structure as in FIG. On the surface 4 where the translucent material 3 is in contact with the outside world, substantially pyramidal irregularities with an interval of 5 μm were formed. In this example, potassium hydroxide was used as the anisotropic etching solution for the silicon substrate, and the etching time was 5 minutes.

  When the current of 350 mA was passed through the illumination module of this example at a voltage of 100 V to output light, a light output of 977 lumens (lm) was obtained.

FIG. 13 shows an emission spectrum of the illumination module of this example. The emission spectrum of this example is composed of an excitation spectrum having an emission peak at 460 nm by a GaN light emitting diode and a fluorescence spectrum having an emission peak at 565 nm by a (Sr, Ba) ₂ SiO ₄ : Eu ²⁺ phosphor. The color temperature was 5400K and the average color rendering index was 70.

  Note that the root mean square roughness Rq (RMS) of the surface where the translucent material in contact with the outside world in this example was measured with a surface roughness meter “ALPHA STEP 500” manufactured by Tencor Co., Ltd. was 2.0 μm. there were.

(Comparative Example 1)
Except that the translucent material did not form irregularities on the surface in contact with the outside world, an illumination module was produced in the same manner as in Example 1, and light was output in the same manner as in Example 1. As a result, 651 lumen (lm) was obtained. Obtained light output.

(Comparative Example 2)
Instead of forming substantially pyramid-shaped irregularities on the surface where the translucent material is in contact with the outside world, the surface where the translucent material is in contact with the outside world is roughened by sandblasting, and the root mean square roughness Rq (RMS) of the surface is 2 An illumination module was produced in the same manner as in Example 1 except that the thickness was set to 0.0 μm, and light was output in the same manner as in Example 1. As a result, a light output of 600 lumens (lm) was obtained.

  In Example 1, since the substantially pyramid-shaped irregularities with an interval of 5 μm were formed on the light extraction surface, the light extraction efficiency was improved and a high light output could be obtained. On the other hand, in Comparative Example 1, since the unevenness was not formed on the light extraction surface, the light extraction efficiency was lowered and only a low light output was obtained. Further, in Comparative Example 2, since the light extraction surface was simply roughened, the light was scattered, the light extraction efficiency was lowered, and only a lower light output was obtained.

  As described above, the present invention can provide a light-emitting device that can extract light regardless of the angle of incident light on the light extraction surface, and prevent light scattering, thereby improving light extraction efficiency. In addition, the present invention can provide a method for manufacturing a light-emitting device that can easily form substantially pyramid or substantially conical irregularities on the light extraction surface of the light-emitting device. Furthermore, the present invention can provide a lighting module and a lighting device having a high light output using a light emitting device with high light extraction efficiency.

It is sectional drawing which shows an example of the light-emitting device of this invention. It is an expansion perspective view of the surface 4 in which the translucent material 3 of FIG. It is an enlarged plan view of the surface 4 in which the translucent material 3 of FIG. It is sectional drawing which shows an example of the extraction state of the light of this invention. It is a figure which shows the relationship between the incident angle of light, and reflection of light. It is process sectional drawing which shows an example which forms an unevenness | corrugation in the surface of the single crystal substrate which is a part of manufacturing method of the light-emitting device of this invention. It is process sectional drawing which shows an example which forms an unevenness | corrugation in the surface of the metal substrate which is a part of manufacturing method of the light-emitting device of this invention. It is a perspective view which shows an example of the illumination module of this invention. It is the top view (a) of the illumination module shown in FIG. 8, AA sectional drawing (b) of a top view (a), and the principal part enlarged view (c) of AA sectional drawing (b). It is the top view (a) of the state which removed the power generator 84 from the multilayer board | substrate 82 of FIG. 9, and the B section enlarged view of the top view (a). It is the perspective view (a) which shows an example of the illuminating device of this invention, and its bottom view (b). It is a perspective view of the socket part of the illumination module of the illuminating device of FIG. It is a figure which shows the emission spectrum of the illumination module of Example 1. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light emitting device 2 Light emitting element 3 Translucent material 4 Surface 5 Submount 6 Phosphor 7 Base material 8 Substrate 9 Composite material layer 10a, 10b Connection electrode 11 Wire 12 Concavity and convexity 13 Reflecting plate 13a Reflecting surface 41 Translucent material 42a, 42b surface 51 light emitting element 52 translucent resin 53 surface 61 surface 62 silicon substrate 63 mask 64 unevenness 71 unevenness 72 silicon substrate 73 hard metal layer 74a, 74b soft metal layer 75 base metal 76 support 77 metal substrate precursor 78 unevenness 79 Metal substrate 81 Illumination module 82 Multilayer substrate 82a Notch 83 Extraction electrode 84 Light emitting device 85a, 85b Connection electrode 86 Lead 111 Illumination device 112 Instrument 113 Illumination module 114 Notch 115 Extraction electrode 116 Socket portion 117 Module mounting surface 118 Flexible terminal 1 19 Guide convex part 121 O-ring 122 Ring screw

Claims (14)

A light-emitting device comprising: a light-emitting element; and a light-transmitting material that covers the light-emitting element, wherein the light-transmitting material outputs light from a surface in contact with an external environment,
A light-emitting device, wherein a surface of the translucent material in contact with the outside is provided with irregularities including at least one shape selected from a substantially pyramid shape and a substantially conical shape.   The light-emitting device according to claim 1, wherein an interval between the irregularities is 1 μm or more and 100 μm or less.   The light-emitting device according to claim 1, wherein the translucent material is any one material selected from translucent resin and glass.   The light emitting device according to claim 1, wherein the light emitting element is a semiconductor light emitting element. A method of manufacturing a light emitting device comprising: a light emitting element; and a light transmissive material covering the light emitting element, wherein the surface of the light transmissive material in contact with the outside has unevenness.
Forming irregularities on the surface of the single crystal substrate;
Using the surface of the single crystal substrate on which the irregularities have been formed as a mold, forming the translucent material, thereby forming irregularities on the surface of the translucent material;
A method for manufacturing a light-emitting device, comprising: A method of manufacturing a light emitting device comprising: a light emitting element; and a light transmissive material covering the light emitting element, wherein the surface of the light transmissive material in contact with the outside has unevenness.
Forming irregularities on the surface of the single crystal substrate;
Transferring the irregularities on the surface of the single crystal substrate to a metal substrate;
Forming a concavo-convex on the surface of the translucent material by molding the translucent material using the surface of the metal substrate to which the concavo-convex has been transferred as a mold; and
A method for manufacturing a light-emitting device, comprising:   The method for manufacturing a light emitting device according to claim 5 or 6, wherein the step of forming irregularities on the surface of the single crystal substrate is performed by any one method selected from an anisotropic etching method and a plasma CVD method.   The single crystal substrate is made of a silicon single crystal, the surface of the single crystal substrate is formed by the (100) plane of the silicon single crystal, and the formation of irregularities on the single crystal substrate is performed by anisotropic etching, The method for manufacturing a light-emitting device according to claim 5, wherein the unevenness of the single crystal substrate is formed from a (111) plane of the silicon single crystal.   The method for manufacturing a light emitting device according to claim 7, wherein the anisotropic etching method is performed using a lattice mask.   7. The method for manufacturing a light emitting device according to claim 5, wherein the unevenness of the surface of the translucent material includes at least one shape selected from a substantially pyramid shape and a substantially conical shape.   The method for manufacturing a light emitting device according to any one of claims 5 to 10, wherein an interval between the irregularities on the surface of the translucent material is 1 µm or more and 100 µm or less.   The method for manufacturing a light emitting device according to claim 5, wherein the light transmissive material is any one material selected from a light transmissive resin and glass.   An illumination module comprising a plurality of the light-emitting devices according to claim 1.   An illumination device using the illumination module according to claim 13.

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