JP2005159332A5 - - Google Patents

Download PDF

Info

Publication number
JP2005159332A5
JP2005159332A5 JP2004312684A JP2004312684A JP2005159332A5 JP 2005159332 A5 JP2005159332 A5 JP 2005159332A5 JP 2004312684 A JP2004312684 A JP 2004312684A JP 2004312684 A JP2004312684 A JP 2004312684A JP 2005159332 A5 JP2005159332 A5 JP 2005159332A5
Authority
JP
Japan
Prior art keywords
region
ultrafine carbon
channel formation
semiconductor device
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004312684A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005159332A (ja
JP4762522B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004312684A priority Critical patent/JP4762522B2/ja
Priority claimed from JP2004312684A external-priority patent/JP4762522B2/ja
Publication of JP2005159332A publication Critical patent/JP2005159332A/ja
Publication of JP2005159332A5 publication Critical patent/JP2005159332A5/ja
Application granted granted Critical
Publication of JP4762522B2 publication Critical patent/JP4762522B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2004312684A 2003-10-28 2004-10-27 半導体装置の作製方法 Expired - Fee Related JP4762522B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004312684A JP4762522B2 (ja) 2003-10-28 2004-10-27 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003368159 2003-10-28
JP2003368159 2003-10-28
JP2004312684A JP4762522B2 (ja) 2003-10-28 2004-10-27 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010271734A Division JP5250615B2 (ja) 2003-10-28 2010-12-06 半導体装置

Publications (3)

Publication Number Publication Date
JP2005159332A JP2005159332A (ja) 2005-06-16
JP2005159332A5 true JP2005159332A5 (enrdf_load_stackoverflow) 2007-11-22
JP4762522B2 JP4762522B2 (ja) 2011-08-31

Family

ID=34741101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004312684A Expired - Fee Related JP4762522B2 (ja) 2003-10-28 2004-10-27 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4762522B2 (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829883B2 (en) * 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
US7135773B2 (en) * 2004-02-26 2006-11-14 International Business Machines Corporation Integrated circuit chip utilizing carbon nanotube composite interconnection vias
WO2006038504A1 (ja) * 2004-10-04 2006-04-13 Matsushita Electric Industrial Co., Ltd. 縦型電界効果トランジスタおよびその製造方法
JP2010525557A (ja) 2007-03-28 2010-07-22 クナノ アーベー ナノワイヤ回路構造物
US8143617B2 (en) * 2007-07-03 2012-03-27 Panasonic Corporation Semiconductor device, semiconductor device manufacturing method and image display device
CN102027610B (zh) * 2008-04-11 2012-12-05 桑迪士克3D有限责任公司 包括碳纳米管可逆电阻切换元件的存储器单元及其形成方法
JP2011187901A (ja) 2010-03-11 2011-09-22 Canon Inc 半導体デバイスの製造方法
JP6250210B2 (ja) * 2017-04-11 2017-12-20 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. 半導体装置
CN113471298A (zh) * 2021-06-23 2021-10-01 Tcl华星光电技术有限公司 薄膜晶体管、显示面板及电子设备

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법

Similar Documents

Publication Publication Date Title
JP2005109465A5 (enrdf_load_stackoverflow)
Xu et al. Nanometer‐scale modification and welding of silicon and metallic nanowires with a high‐intensity electron beam
Si et al. Scalable preparation of high-density semiconducting carbon nanotube arrays for high-performance field-effect transistors
JP5174101B2 (ja) 薄膜トランジスタ
Das et al. Single-layer graphene as a barrier layer for intense UV laser-induced damages for silver nanowire network
KR101715355B1 (ko) 그래핀 전자 소자
TWI508228B (zh) 薄膜電晶體
CN102737935B (zh) 透射电镜微栅
CN104795292B (zh) 电子发射装置、其制备方法及显示器
JP6052537B2 (ja) グラフェン構造体及びそれを用いた半導体装置並びにそれらの製造方法
KR20110057989A (ko) 그래핀과 나노구조체의 복합 구조체 및 그 제조방법
CN102315058A (zh) 透射电镜微栅及其制备方法
JP2011105583A (ja) グラフェンとナノ構造体との複合構造体及びその製造方法
JP2009278113A (ja) 薄膜トランジスタ
CN104795291B (zh) 电子发射装置、其制备方法及显示器
JP2005159332A5 (enrdf_load_stackoverflow)
JP5769846B2 (ja) 微構造体及びその製造方法
WO2004047183A1 (ja) 電子素子及びその製造方法
CN101820572B (zh) 热致发声装置
Sharma et al. Structure-modified stress dynamics and wetting characteristics of carbon nanotubes and multilayer graphene for electron field emission investigations
TWI543929B (zh) 一種奈米級微結構的製備方法
JP4984498B2 (ja) 機能素子及びその製造方法
Zeng et al. Atomic vacancy defects in the electronic properties of semi-metallic carbon nanotubes
Zhang et al. Substrate engineering-tailored fabrication of aligned graphene nanoribbon arrays: implications for graphene electronic devices
Jung et al. Sculpting carbon bonds for allotropic transformation through solid-state re-engineering of–sp2 carbon