JP2005158761A5 - - Google Patents

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Publication number
JP2005158761A5
JP2005158761A5 JP2003390391A JP2003390391A JP2005158761A5 JP 2005158761 A5 JP2005158761 A5 JP 2005158761A5 JP 2003390391 A JP2003390391 A JP 2003390391A JP 2003390391 A JP2003390391 A JP 2003390391A JP 2005158761 A5 JP2005158761 A5 JP 2005158761A5
Authority
JP
Japan
Prior art keywords
vacuum chamber
net
catalyst
usually
referring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003390391A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005158761A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003390391A priority Critical patent/JP2005158761A/ja
Priority claimed from JP2003390391A external-priority patent/JP2005158761A/ja
Priority to TW093132621A priority patent/TW200524018A/zh
Priority to KR1020040092234A priority patent/KR101233525B1/ko
Priority to US10/989,541 priority patent/US20050118810A1/en
Priority to CN2004100957620A priority patent/CN1638052B/zh
Priority to CN200810125094XA priority patent/CN101330044B/zh
Publication of JP2005158761A publication Critical patent/JP2005158761A/ja
Publication of JP2005158761A5 publication Critical patent/JP2005158761A5/ja
Priority to US11/710,918 priority patent/US8216642B2/en
Pending legal-status Critical Current

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JP2003390391A 2003-11-20 2003-11-20 薄膜製造方法、半導体装置の製造方法、及び半導体装置 Pending JP2005158761A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2003390391A JP2005158761A (ja) 2003-11-20 2003-11-20 薄膜製造方法、半導体装置の製造方法、及び半導体装置
TW093132621A TW200524018A (en) 2003-11-20 2004-10-27 Method of cleaning surface of semiconductor substrate, method of manufacturing film, method of manufacturing semiconductor device and semiconductor device
KR1020040092234A KR101233525B1 (ko) 2003-11-20 2004-11-12 반도체기판 표면의 클리닝 방법, 박막 제조방법,반도체장치의 제조방법 및 반도체장치
US10/989,541 US20050118810A1 (en) 2003-11-20 2004-11-17 Method of cleaning surface of semiconductor substrate, method of manufacturing thin film, method of manufacturing semiconductor device, and semiconductor device
CN2004100957620A CN1638052B (zh) 2003-11-20 2004-11-19 薄膜制造方法
CN200810125094XA CN101330044B (zh) 2003-11-20 2004-11-19 薄膜制造方法
US11/710,918 US8216642B2 (en) 2003-11-20 2007-02-27 Method of manufacturing film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003390391A JP2005158761A (ja) 2003-11-20 2003-11-20 薄膜製造方法、半導体装置の製造方法、及び半導体装置

Publications (2)

Publication Number Publication Date
JP2005158761A JP2005158761A (ja) 2005-06-16
JP2005158761A5 true JP2005158761A5 (https=) 2006-11-02

Family

ID=34717783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003390391A Pending JP2005158761A (ja) 2003-11-20 2003-11-20 薄膜製造方法、半導体装置の製造方法、及び半導体装置

Country Status (2)

Country Link
JP (1) JP2005158761A (https=)
CN (1) CN101330044B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101426952A (zh) * 2006-04-18 2009-05-06 株式会社爱发科 成膜装置及阻挡膜的制造方法
JP6041464B2 (ja) * 2011-03-03 2016-12-07 大陽日酸株式会社 金属薄膜の製膜方法、および金属薄膜の製膜装置
US9474163B2 (en) * 2014-12-30 2016-10-18 Asm Ip Holding B.V. Germanium oxide pre-clean module and process
US10373850B2 (en) 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
AT519217B1 (de) * 2016-10-04 2018-08-15 Carboncompetence Gmbh Vorrichtung und Verfahren zum Aufbringen einer Kohlenstoffschicht
JP6985417B2 (ja) * 2017-12-18 2021-12-22 積水化学工業株式会社 表面処理方法及び装置
US11410881B2 (en) 2020-06-28 2022-08-09 Applied Materials, Inc. Impurity removal in doped ALD tantalum nitride

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3436776B2 (ja) * 1993-08-09 2003-08-18 忠弘 大見 ウエハ洗浄装置及び洗浄方法
US6040010A (en) * 1996-09-10 2000-03-21 Micron Technology, Inc. Catalytic breakdown of reactant gases in chemical vapor deposition
CN1313412A (zh) * 2000-03-10 2001-09-19 广镓光电股份有限公司 在单晶基板上形成第三族氮化物外延层方法、制品及设备

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