JP2005158761A5 - - Google Patents
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- JP2005158761A5 JP2005158761A5 JP2003390391A JP2003390391A JP2005158761A5 JP 2005158761 A5 JP2005158761 A5 JP 2005158761A5 JP 2003390391 A JP2003390391 A JP 2003390391A JP 2003390391 A JP2003390391 A JP 2003390391A JP 2005158761 A5 JP2005158761 A5 JP 2005158761A5
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- vacuum chamber
- net
- catalyst
- usually
- referring
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Description
この図１２を参照し、このＣＶＤ装置１０１は、真空チャンバー１２０を有しており、該真空チャンバー１２０内部の底壁上にはホットプレート１２１が配置されており、内部の天井付近には高周波電極１２２が配置されている。
触媒体は、通常は直径０．５ｍｍ程度の細線であり、一本乃至複数本を平行に配置したり、網状に配置することができる。
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003390391A JP2005158761A (ja) | 2003-11-20 | 2003-11-20 | 薄膜製造方法、半導体装置の製造方法、及び半導体装置 |
| TW093132621A TW200524018A (en) | 2003-11-20 | 2004-10-27 | Method of cleaning surface of semiconductor substrate, method of manufacturing film, method of manufacturing semiconductor device and semiconductor device |
| KR1020040092234A KR101233525B1 (ko) | 2003-11-20 | 2004-11-12 | 반도체기판 표면의 클리닝 방법, 박막 제조방법,반도체장치의 제조방법 및 반도체장치 |
| US10/989,541 US20050118810A1 (en) | 2003-11-20 | 2004-11-17 | Method of cleaning surface of semiconductor substrate, method of manufacturing thin film, method of manufacturing semiconductor device, and semiconductor device |
| CN200810125094XA CN101330044B (zh) | 2003-11-20 | 2004-11-19 | 薄膜制造方法 |
| CN2004100957620A CN1638052B (zh) | 2003-11-20 | 2004-11-19 | 薄膜制造方法 |
| US11/710,918 US8216642B2 (en) | 2003-11-20 | 2007-02-27 | Method of manufacturing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003390391A JP2005158761A (ja) | 2003-11-20 | 2003-11-20 | 薄膜製造方法、半導体装置の製造方法、及び半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005158761A JP2005158761A (ja) | 2005-06-16 |
| JP2005158761A5 true JP2005158761A5 (ja) | 2006-11-02 |
Family
ID=34717783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003390391A Pending JP2005158761A (ja) | 2003-11-20 | 2003-11-20 | 薄膜製造方法、半導体装置の製造方法、及び半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2005158761A (ja) |
| CN (1) | CN101330044B (ja) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2007123102A1 (ja) * | 2006-04-18 | 2009-09-03 | 株式会社アルバック | 成膜装置、バリア膜製造方法 |
| JP6041464B2 (ja) * | 2011-03-03 | 2016-12-07 | 大陽日酸株式会社 | 金属薄膜の製膜方法、および金属薄膜の製膜装置 |
| US9474163B2 (en) * | 2014-12-30 | 2016-10-18 | Asm Ip Holding B.V. | Germanium oxide pre-clean module and process |
| US10373850B2 (en) | 2015-03-11 | 2019-08-06 | Asm Ip Holding B.V. | Pre-clean chamber and process with substrate tray for changing substrate temperature |
| AT519217B1 (de) * | 2016-10-04 | 2018-08-15 | Carboncompetence Gmbh | Vorrichtung und Verfahren zum Aufbringen einer Kohlenstoffschicht |
| CN111107949B (zh) * | 2017-12-18 | 2022-04-19 | 积水化学工业株式会社 | 表面处理方法和装置 |
| US11410881B2 (en) * | 2020-06-28 | 2022-08-09 | Applied Materials, Inc. | Impurity removal in doped ALD tantalum nitride |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3436776B2 (ja) * | 1993-08-09 | 2003-08-18 | 忠弘 大見 | ウエハ洗浄装置及び洗浄方法 |
| US6040010A (en) * | 1996-09-10 | 2000-03-21 | Micron Technology, Inc. | Catalytic breakdown of reactant gases in chemical vapor deposition |
| CN1313412A (zh) * | 2000-03-10 | 2001-09-19 | 广镓光电股份有限公司 | 在单晶基板上形成第三族氮化物外延层方法、制品及设备 |
-
2003
- 2003-11-20 JP JP2003390391A patent/JP2005158761A/ja active Pending
-
2004
- 2004-11-19 CN CN200810125094XA patent/CN101330044B/zh active Active
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