JP2005153242A - Manufacturing method for liquid jetting head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a liquid jetting head which can favorably form pressure generation chambers, and at the same time can improve the manufacturing efficiency and greatly reduce costs. <P>SOLUTION: The manufacturing method includes a process of forming a vibrating plate and piezoelectric elements on a passage formation substrate wafer which consists of a silicon wafer and where a passage formation substrate is integrally formed; a process of joining a protecting substrate wafer where a protecting substrate consisting of a silicon wafer and having a piezoelectric element holding part for protecting the piezoelectric elements is integrally formed, onto the passage formation substrate wafer; a process of bonding a sealing sheet composed of a poly-para-phenyleneterephthalamide (PPTA) to a surface of the protecting substrate wafer; a process of forming the pressure generation chambers by etching the passage formation substrate wafer; a process of removing the sealing sheet; and a process of dividing the passage formation substrate wafer and the protecting substrate wafer to a predetermined size. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a liquid ejecting head that ejects a liquid to be ejected, and in particular, a part of a pressure generation chamber that communicates with a nozzle opening that ejects ink droplets is configured by a vibration plate, and a piezoelectric layer on the surface of the vibration plate is provided. It is suitable for application to an ink jet recording head that is formed and ejects ink droplets by displacement of a piezoelectric layer.

  A part of the pressure generation chamber communicating with the nozzle opening for discharging ink droplets is constituted by a vibration plate, and the vibration plate is deformed by a piezoelectric element to pressurize the ink in the pressure generation chamber to discharge ink droplets from the nozzle opening. Two types of ink jet recording heads have been put into practical use: those using a longitudinal vibration mode piezoelectric actuator that extends and contracts in the axial direction of the piezoelectric element, and those using a flexural vibration mode piezoelectric actuator.

  The former can change the volume of the pressure generation chamber by bringing the end face of the piezoelectric element into contact with the vibration plate, and it is possible to manufacture a head suitable for high-density printing, while the piezoelectric element is arranged in an array of nozzle openings. There is a problem that the manufacturing process is complicated because a difficult process of matching the pitch into a comb-like shape and an operation of positioning and fixing the cut piezoelectric element in the pressure generating chamber are necessary. On the other hand, the latter can flexibly vibrate, although a piezoelectric element can be built on the diaphragm by a relatively simple process of sticking a green sheet of piezoelectric material according to the shape of the pressure generation chamber and firing it. There is a problem that a certain amount of area is required for the use of, and high-density arrangement is difficult.

  On the other hand, in order to eliminate the disadvantages of the latter recording head, a uniform piezoelectric material layer is formed over the entire surface of the diaphragm by a film forming technique, and this piezoelectric material layer is shaped to correspond to the pressure generating chamber by lithography. In some cases, the piezoelectric element is formed so as to be independent for each pressure generating chamber. Further, such a piezoelectric element has a problem that it is easily destroyed due to an external environment such as moisture. In order to solve this problem, a sealing substrate having a piezoelectric element holding portion is joined to a flow path forming substrate in which a pressure generating chamber is formed, and the piezoelectric element is sealed in the piezoelectric element holding portion. is there.

  As a method for manufacturing such an ink jet recording head, a diaphragm and a piezoelectric element are formed on the surface of a silicon wafer, a sealing substrate forming material is bonded onto the silicon wafer, and then a silicon wafer sealing substrate is formed. A pressure generating chamber or the like is formed by anisotropically etching the surface opposite to the forming material. Further, in such an ink jet recording head manufacturing method, since the pressure generating chamber is formed by anisotropic etching after the sealing substrate forming material is bonded to the silicon wafer, the sealing is performed when the pressure generating chamber is formed. The surface of the stop substrate forming material is covered with a protective film made of, for example, a resin material to prevent the piezoelectric element or the like from being damaged by the etching solution.

  However, since such a protective film is formed by applying and curing a resin material or the like on the sealing substrate, it takes a relatively long time to form the protective film. In addition, since such a protective film is removed by etching or the like after the pressure generation chamber is formed, there is a problem that it takes time to remove the protective film, resulting in low manufacturing efficiency and high cost. Furthermore, since the sealing substrate forming material is formed with a through hole and the shape is complicated, there is a problem that it is difficult to completely protect the sealing substrate forming material with the protective film.

  In order to solve such a problem, a protective substrate made of a silicon single crystal substrate is bonded to the peripheral portion of the sealing substrate forming material, and the silicon wafer is covered with the protective substrate covering the surface of the sealing substrate forming material. A method of manufacturing an ink jet recording head in which a pressure generating chamber is formed by etching has been proposed (see, for example, Patent Document 1).

  According to such a manufacturing method, compared with a manufacturing method using a protective film formed by applying a resin material, manufacturing efficiency may be improved, but the protective substrate is cut and removed. Therefore, a certain amount of time is required, and it cannot be said that the manufacturing efficiency is sufficiently improved. Moreover, since the silicon wafer which is a material of a protective substrate is comparatively expensive, there also exists a problem that cost will increase. Such a problem exists not only in an ink jet recording head that ejects ink droplets, but also in other liquid ejecting heads that eject droplets other than ink.

JP 2003-220708 A (Claims)

  In view of such circumstances, it is an object of the present invention to provide a method of manufacturing a liquid ejecting head that can form a pressure generating chamber satisfactorily, improve manufacturing efficiency, and significantly reduce costs. .

According to a first aspect of the present invention for solving the above problems, a flow path forming substrate in which a pressure generating chamber communicating with a nozzle opening is defined, and the pressure forming chamber is provided on the flow path forming substrate via a vibration plate. A method of manufacturing a liquid jet head comprising a piezoelectric element that applies pressure to a generation chamber, wherein the diaphragm is formed on a wafer for a flow path forming substrate that is made of a silicon wafer and is integrally formed with the flow path forming substrate. And a step of forming the piezoelectric element, and a protective substrate wafer formed of a silicon wafer and integrally formed with a protective substrate having a piezoelectric element holding portion for protecting the piezoelectric element is bonded onto the flow path forming substrate wafer. A step of adhering a sealing sheet made of polyparaphyllene telestalamide (PPTA) to the surface of the protective substrate wafer, and etching the flow path forming substrate wafer. A liquid comprising: a step of forming a pressure generating chamber; a step of removing the sealing sheet; and a step of dividing the flow path forming substrate wafer and the protective substrate wafer into a predetermined size. It is in the manufacturing method of an ejection head.
In the first aspect, since the surface of the protective substrate wear is completely sealed by the sealing sheet, when the pressure generating chamber or the like is formed on the flow path forming substrate wafer by etching, for example, KOH or the like It is possible to reliably prevent the piezoelectric element and the like from being damaged by the etching solution. Moreover, since a sealing sheet can be removed comparatively easily, manufacturing efficiency improves significantly. Furthermore, PPTA used as a sealing sheet has a linear expansion coefficient substantially equal to that of a silicon wafer that is a wafer for a flow path forming substrate and a wafer for a protective substrate. Therefore, when etching a wafer for a flow path forming substrate, etc. Deformation (warping) of each wafer due to heat can be prevented.

According to a second aspect of the present invention, in the first aspect, in the step of bonding the sealing sheet to the protective substrate wafer, the protective substrate excluding at least a region to be the protective substrate of the protective substrate wafer. In the method of manufacturing a liquid jet head, the sealing sheet is selectively bonded to a peripheral portion of the wafer for use.
In the second aspect, the sealing sheet can be removed relatively easily. Further, the wiring pattern provided on the protective substrate (protective substrate wafer) is not adversely affected.

According to a third aspect of the present invention, in the second aspect, the sealing sheet is bonded to the protective substrate wafer so that a space is secured between the protective substrate wafer and the sealing sheet. The present invention is directed to a method of manufacturing a liquid jet head.
In the third aspect, adverse effects on the wiring pattern and the like provided on the protective substrate (protective substrate wafer), for example, peeling and damage of the wiring pattern are reliably prevented.

According to a fourth aspect of the present invention, in the second or third aspect, via a protective sheet disposed without adhering to the protective substrate wafer on the region to be the protective substrate of the protective substrate wafer, In the method of manufacturing a liquid jet head, the sealing sheet is bonded to the protective substrate wafer.
In the fourth aspect, adverse effects on the wiring pattern or the like provided on the protective substrate (protective substrate wafer), for example, peeling or damage of the wiring pattern are reliably prevented.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment 1)
FIG. 1 is an exploded perspective view showing an ink jet recording head according to Embodiment 1 of the present invention, and FIG. 2 is a plan view and a cross-sectional view of FIG. As shown in the figure, the flow path forming substrate 10 is made of a silicon single crystal substrate having a plane orientation (110) in the present embodiment, and one surface thereof is made of silicon dioxide previously formed by thermal oxidation. A 2 μm elastic film 50 is formed. A plurality of pressure generating chambers 12 are arranged in parallel in the width direction of the flow path forming substrate 10. In addition, a communication portion 13 is formed in a region outside the longitudinal direction of the pressure generation chamber 12 of the flow path forming substrate 10, and the communication portion 13 and each pressure generation chamber 12 are provided for each pressure generation chamber 12. Communication is made via a supply path 14. The communication part 13 constitutes a part of a reservoir that communicates with a reservoir part of a protective substrate, which will be described later, and serves as a common ink chamber for the pressure generating chambers 12. The ink supply path 14 is formed with a narrower width than the pressure generation chamber 12, and maintains a constant flow path resistance of ink flowing into the pressure generation chamber 12 from the communication portion 13.

As the thickness of the flow path forming substrate 10 on which such a pressure generation chamber 12 and the like are formed, it is preferable to select an optimum thickness in accordance with the density at which the pressure generation chamber 12 is disposed. For example, when the pressure generating chambers 12 are arranged at about 180 (180 dpi) per inch, the thickness of the flow path forming substrate 10 is preferably about 180 to 280 μm, more preferably about 220 μm. is there. For example, when the pressure generating chambers 12 are arranged at a relatively high density of about 360 dpi, the thickness of the flow path forming substrate 10 is preferably 100 μm or less. This is because the arrangement density can be increased while maintaining the rigidity of the partition wall 11 between the adjacent pressure generation chambers 12. In this embodiment, since the arrangement density of the pressure generating chambers 12 is about 360 dpi, the thickness of the flow path forming substrate 10 is about 70 μm.
As shown in FIG. 3, a plurality of such flow path forming substrates 10 are integrally formed on a flow path forming substrate wafer 100, which is a silicon wafer. After the pressure generating chamber 12 and the like are formed on the substrate wafer 100, the flow path forming substrate wafer 100 is divided.

Further, on the opening surface side of the flow path forming substrate 10, an insulating film 51 used as a mask when forming the pressure generating chambers 12 is interposed on the side opposite to the ink supply path 14 of each pressure generating chamber 12. A nozzle plate 20 having a nozzle opening 21 communicating in the vicinity of the end is fixed through an adhesive, a heat-welded film, or the like. The nozzle plate 20 has a thickness of, for example, 0.01 to 1 mm, a linear expansion coefficient of 300 ° C. or less, for example, 2.5 to 4.5 [× 10 ⁻⁶ / ° C.], glass ceramics, silicon It consists of a single crystal substrate or non-rust steel.

  On the other hand, as described above, the elastic film 50 having a thickness of, for example, about 1.0 μm is formed on the side opposite to the opening surface of the flow path forming substrate 10. For example, an insulator film 55 having a thickness of about 0.4 μm is formed. Further, on the insulator film 55, a lower electrode film 60 having a thickness of, for example, about 0.2 μm, a piezoelectric layer 70 having a thickness of, for example, about 1.0 μm, and a thickness of, for example, about 0 The upper electrode film 80 having a thickness of 0.05 μm is laminated by a process described later to constitute the piezoelectric element 300. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In general, one electrode of the piezoelectric element 300 is used as a common electrode, and the other electrode and the piezoelectric layer 70 are patterned for each pressure generating chamber 12. In addition, here, a portion that is configured by any one of the patterned electrodes and the piezoelectric layer 70 and in which piezoelectric distortion is generated by applying a voltage to both electrodes is referred to as a piezoelectric active portion. In this embodiment, the lower electrode film 60 is a common electrode of the piezoelectric element 300, and the upper electrode film 80 is an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for the convenience of the drive circuit and wiring. In either case, a piezoelectric active part is formed for each pressure generating chamber. Further, here, the piezoelectric element 300 and the vibration plate that is displaced by driving the piezoelectric element 300 are collectively referred to as a piezoelectric actuator. Note that a lead electrode 90 made of, for example, gold (Au) or the like is connected to the upper electrode film 80 of each piezoelectric element 300, and a voltage is selectively applied to each piezoelectric element 300 via the lead electrode 90. Is applied.

  Further, a protective substrate 30 having a piezoelectric element holding portion 31 capable of securing a space that does not hinder its movement in a region facing the piezoelectric element 300 is bonded to the surface on the piezoelectric element 300 side on the flow path forming substrate 10. Has been. Since the piezoelectric element 300 is formed in the piezoelectric element holding part 31, it is protected in a state hardly affected by the external environment. In addition, the protection substrate 30 is provided with a reservoir portion 32 in a region corresponding to the communication portion 13 of the flow path forming substrate 10. In the present embodiment, the reservoir portion 32 is provided along the direction in which the pressure generating chambers 12 are arranged so as to penetrate the protective substrate 30 in the thickness direction. A reservoir 110 that is in communication with the communication unit 13 and serves as a common ink chamber for the pressure generation chambers 12 is configured. Further, a through hole 33 that penetrates the protective substrate 30 in the thickness direction is provided in a region between the piezoelectric element holding portion 31 and the reservoir portion 32 of the protective substrate 30. The lead electrode 90 drawn out from each piezoelectric element 300 extends to the through hole 33 and is connected to a drive IC or the like for driving the piezoelectric element 300 by wire bonding or the like (not shown). In addition, examples of the material of the protective substrate 30 include glass, ceramic material, metal, resin, and the like, but it is more preferable that the material is substantially the same as the thermal expansion coefficient of the flow path forming substrate 10. In this embodiment, the silicon single crystal substrate made of the same material as the flow path forming substrate 10 is used.

  On the protective substrate 30, a compliance substrate 40 including a sealing film 41 and a fixing plate 42 is bonded. The sealing film 41 is made of a material having low rigidity and flexibility (for example, a polyphenylene sulfide (PPS) film having a thickness of 6 μm), and one surface of the reservoir portion 32 is sealed by the sealing film 41. Yes. The fixing plate 42 is made of a hard material such as metal (for example, stainless steel (SUS) having a thickness of 30 μm). Since the region of the fixing plate 42 facing the reservoir 110 is an opening 43 that is completely removed in the thickness direction, one surface of the reservoir 110 is sealed only by the flexible sealing film 41. Has been.

  Note that such an ink jet recording head takes in ink from an external ink supply means (not shown), fills the interior from the reservoir 110 to the nozzle opening 21, and then externally in accordance with a recording signal from a drive circuit (not shown). By applying a voltage between each of the lower electrode film 60 and the upper electrode film 80 corresponding to the pressure generation chamber 12 via the wiring, the elastic film 50, the lower electrode film 60, and the piezoelectric layer 70 are bent and deformed. The pressure in each pressure generating chamber 12 is increased, and ink droplets are ejected from the nozzle openings 21.

Hereinafter, a method for manufacturing the ink jet recording head according to the present embodiment will be described. 4 to 7 are diagrams for explaining the manufacturing process of the ink jet recording head, and are sectional views in the longitudinal direction of the pressure generating chamber.
First, as shown in FIG. 4A, a channel forming substrate wafer 100 which is a silicon wafer is thermally oxidized in a diffusion furnace at about 1100 ° C., and a silicon dioxide film 52 constituting an elastic film 50 is formed on the surface thereof. To do. In the present embodiment, as the flow path forming substrate wafer 100, a silicon wafer having a relatively thick and high rigidity of about 625 μm is used.

Next, as shown in FIG. 4B, a zirconium (Zr) layer is formed on the elastic film 50 (silicon dioxide film 52), and then thermally oxidized in a diffusion furnace at 500 to 1200 ° C., for example, to form zirconium oxide ( An insulator film 55 made of ZrO ₂ ) is formed. Next, as shown in FIG. 4C, for example, after the lower electrode film 60 is formed by laminating platinum and iridium on the insulator film 55, the lower electrode film 60 is patterned into a predetermined shape.

  Next, as shown in FIG. 4D, for example, a piezoelectric layer 70 made of lead zirconate titanate (PZT) or the like and an upper electrode film 80 made of iridium (Ir), for example, are connected to the flow path forming substrate. And formed on the entire surface of the wafer 100. Next, as shown in FIG. 5A, the piezoelectric layer 70 and the upper electrode film 80 are patterned to form the piezoelectric elements 300 in the regions to be the pressure generation chambers 12. Next, as shown in FIG. 5B, the lead electrode 90 is formed over the entire surface of the flow path forming substrate 10 and patterned for each piezoelectric element 300.

  Next, as shown in FIG. 5C, a protective substrate wafer 130 that is a silicon wafer and serves as a plurality of protective substrates 30 is bonded to the piezoelectric element 300 side of the flow path forming substrate wafer 100. Since the protective substrate wafer 130 has a thickness of, for example, about 400 μm, the rigidity of the flow path forming substrate wafer 100 is remarkably improved by bonding the protective substrate wafer 130.

Next, as shown in FIG. 6A, after the flow path forming substrate wafer 100 is polished to a certain thickness, the flow path forming substrate is further subjected to wet etching, for example, spin etching, with fluorinated nitric acid. The wafer 100 is set to a predetermined thickness. In the present embodiment, the flow path forming substrate wafer 100 is etched to have a thickness of about 70 μm.
Next, as shown in FIG. 6B, a mask film 51 made of, for example, silicon nitride (SiN) is newly formed on the flow path forming substrate wafer 100 and patterned into a predetermined shape. Then, as shown in FIG. 6C, the surface of the protective substrate wafer 130 is adhered to the protective substrate wafer 130 by adhering a sealing sheet 140 made of polyparaphyllene telestalamide (PPTA) with an adhesive. Is covered with this sealing sheet 140 and sealed. That is, the reservoir portion 32 and the like formed through the protective substrate wafer 130 in the thickness direction are completely sealed by the sealing sheet 140.

  At this time, it is preferable that the sealing sheet 140 is bonded to the peripheral edge of the protective substrate wafer 130 and is not bonded to the region to be the protective substrate 30. The peripheral portion of the protective substrate wafer 130 here includes not only the peripheral portion of the surface of the protective substrate wafer 130 but also the peripheral surface of the flow path forming substrate wafer 100 or the protective substrate wafer 130. That is, the sealing sheet 140 is not limited to the peripheral portion of the surface of the protective substrate wafer 130, and the sealing sheet 140 is bonded to the outer peripheral surface of the protective substrate wafer 130 or the outer peripheral surface of the flow path forming substrate wafer 100. You may do it.

In the present embodiment, the sealing sheet 140 is bonded to the protective substrate wafer 130 with the protective sheet 150 interposed therebetween. That is, an adhesive is applied to the entire surface of the sealing sheet 140, and the protective sheet 150 is bonded to a region facing the portion to be the protective substrate 30 of the protective substrate wafer 130. Then, the sealing sheet 140 is adhered to the protective substrate wafer 130 in a state where the protective sheet 150 is adhered. Thereby, for example, foreign matters such as dust and dirt adhering to the sealing sheet 140 can be prevented from adhering to the surface of the protective substrate wafer 130. The protective sheet 150 also has an effect of preventing peeling or damage of a wiring pattern (not shown) provided in advance on the surface of the protective substrate wafer 130.
As the material of the protective sheet 150, it is preferable to use a material that does not adversely affect the surface of the protective substrate wafer 130, that is, a polymer material that does not interfere with the surface of the protective substrate wafer 130. Examples of such a material include a fluororesin, and polytetrafluoroethylene (PTFE) is used in this embodiment.

  In this embodiment, the sealing sheet 140 to which the protective sheet 150 is bonded is bonded to the protective substrate wafer 130. However, the present invention is not limited to this. Of course, the sealing sheet 140 and the protective sheet 150 are It does not need to be bonded. Of course, the protective sheet 150 may not be provided, but in any case, the sealing sheet 140 is bonded only to the peripheral edge of the protective substrate wafer 130 and becomes the protective substrate 30 of the protective substrate wafer 130. It is preferable not to adhere to the area. When the protective sheet 150 is not provided, it is desirable that a space be secured between the protective substrate wafer 130 and the sealing sheet 140.

  The adhesive for bonding the sealing sheet 140 and the protective substrate wafer 130 may be applied to either the sealing sheet 140 or the protective substrate wafer 130. The method for applying the adhesive is not particularly limited, and when applying to the sealing sheet 140, for example, a film transfer method or the like may be used. Moreover, when apply | coating to the wafer 130 for protective substrates, what is necessary is just to make it apply | coat directly, for example with a dispenser.

  Then, after the sealing sheet 140 is bonded in this way, the flow path forming substrate wafer 100 is anisotropically etched through the mask film 51, thereby forming the flow path as shown in FIG. A pressure generation chamber 12, a communication portion 13, an ink supply path 14, and the like are formed in the substrate wafer 100. At this time, the surface of the protective substrate wafer 130 is covered with the sealing sheet 140 and the surface of the flow path forming substrate wafer 100 on the piezoelectric element 300 side is completely sealed. Alternatively, the piezoelectric element 300 can be reliably prevented from being destroyed by the etching solution.

  Further, the sealing sheet 140 of the present invention is made of polyparaphyllene telestalamide (PPTA) and has a thermal expansion coefficient substantially equal to that of the flow path forming substrate wafer 100 and the protective substrate wafer 130 which are silicon wafers. The wafers 100 and 130 are not warped or deformed by heat generated when the flow path forming substrate wafer 100 is etched. Therefore, the pressure generating chamber 12 and the like can be formed with high accuracy by etching, and an ink jet recording head that can obtain good ejection characteristics can be realized.

  Specifically, when the flow path forming substrate wafer 100 is etched, the wafers 100 and 130 and the sealing sheet 140 are heated to about 80 ° C., and thus expand due to this heat. For this reason, if the linear expansion coefficients of the flow path forming substrate wafer 100 and the protective substrate wafer 130 and the sealing sheet 140 are greatly different, the respective wafers 100 and 130 may be deformed and cracked due to the difference in expansion coefficient. There is. Moreover, for example, the adhesive that adheres the sealing sheet 140 may be temporarily softened by this heat. In this case, the sealing sheet 140 is fixed to the protective substrate wafer 130 in a state of being expanded by heat, and when the wafers 100 and 130 and the sealing sheet 140 are cooled and contracted after completion of etching, The wafers 100 and 130 may be deformed and cracked.

However, in the present invention, the sealing sheet 140 is made of polyparaphyllene telestalamide (PPTA), and the linear expansion coefficient (2.0 × 10 ⁻⁶ / ° C.) of the sealing sheet 140 is the linear expansion of the silicon wafer. Since it is substantially equivalent to the coefficient (3.0 × 10 ⁻⁶ / ° C.), the wafers 100 and 130 and the sealing sheet 140 expand or contract by substantially the same amount by heating or cooling. No deformation such as warpage occurs in 130.

The surface of the protective substrate wafer 130 can be sealed even if another material having alkali resistance, such as polyphenylene sulfide (PPS), is used as the material of the sealing sheet 140, but the linear expansion coefficient Is 3.0 × 10 ⁻⁵ / ° C., which is significantly different from the linear expansion coefficient of the silicon wafer, and as described above, the wafers 100 and 130 may be deformed.

  Next, as shown in FIG. 7B, the sealing sheet 140 is placed in a region not bonded to the protective substrate wafer 130, for example, in a space portion formed by the protective sheet 150 in this embodiment. The sealing film 140 and the protective film 150 are removed. Thus, if only the sealing sheet 140 is cut and the sealing sheet 140 and the like are removed, the time required for removing the sealing sheet 140 can be remarkably shortened, and the manufacturing efficiency is greatly improved. be able to.

  After that, as shown in FIG. 7C, unnecessary portions of the outer peripheral edge portions of the flow path forming substrate wafer 100 and the protective substrate wafer 130, that is, the portion where the sealing sheet 140 is bonded, For example, it is removed by cutting by dicing or the like. Then, the nozzle plate 20 having the nozzle openings 21 formed on the surface of the flow path forming substrate wafer 100 opposite to the protective substrate wafer 130 is bonded, and the compliance substrate 40 is bonded to the protective substrate wafer 130. The ink jet recording head of the present embodiment is obtained by dividing the flow path forming substrate wafer 100 and the like into the flow path forming substrate 10 and the like having a single chip size as shown in FIG.

(Other embodiments)
As mentioned above, although embodiment of this invention was described, of course, this invention is not limited to these embodiment. In the above-described embodiment, the present invention has been described by taking an example of a method for manufacturing an ink jet recording head. Of course, the present invention can also be applied to a manufacturing method for ejecting liquids other than ink. Other liquid ejecting heads include, for example, various recording heads used in image recording apparatuses such as printers, color material ejecting heads used in the manufacture of color filters such as liquid crystal displays, organic EL displays, and FEDs (surface emitting displays). Examples thereof include an electrode material ejection head used for electrode formation, a bioorganic matter ejection head used for biochip production, and the like.

2 is a schematic perspective view of a recording head according to Embodiment 1. FIG. 2A and 2B are a plan view and a cross-sectional view of the recording head according to the first embodiment. 1 is a perspective view showing a flow path forming substrate wafer according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG. 5 is a cross-sectional view illustrating a manufacturing process of the recording head according to Embodiment 1. FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 11 Partition, 12 Pressure generation chamber, 13 Communication part, 14 Ink supply path, 20 Nozzle plate, 21 Nozzle opening, 30 Protection board, 50 Elastic film, 60 Lower electrode film, 70 Piezoelectric layer, 80 Upper electrode film, 100 channel forming substrate wafer, 110 reservoir, 130 protective substrate wafer, 140 sealing sheet, 150 protective sheet, 300 piezoelectric element

Claims (4)

A liquid comprising a flow path forming substrate in which a pressure generating chamber communicating with a nozzle opening is defined, and a piezoelectric element that is provided on the flow path forming substrate via a vibration plate and applies pressure to the pressure generating chamber. A method for manufacturing an ejection head, comprising:
Forming the diaphragm and the piezoelectric element on a flow path forming substrate wafer made of a silicon wafer and integrally forming the flow path forming substrate; and holding a piezoelectric element made of a silicon wafer and protecting the piezoelectric element A step of bonding a protective substrate wafer on which a protective substrate having a portion is integrally formed on the flow path forming substrate wafer, and a sealing sheet made of polyparaphyllene telestalamide (PPTA) for the protective substrate Adhering to the surface of the wafer, forming the pressure generating chamber by etching the flow path forming substrate wafer, removing the sealing sheet, the flow path forming substrate wafer, and the And a step of dividing the protective substrate wafer into a predetermined size. 2. In the step of bonding the sealing sheet to the protective substrate wafer according to claim 1, the sealing substrate is formed at a peripheral portion of the protective substrate wafer excluding at least a region to be the protective substrate of the protective substrate wafer. A method of manufacturing a liquid ejecting head, wherein a sheet is selectively bonded. 3. The liquid ejecting head according to claim 2, wherein the sealing sheet is bonded to the protective substrate wafer so that a space is secured between the protective substrate wafer and the sealing sheet. Method. 4. The protective sheet wafer according to claim 2, wherein the sealing sheet is attached to the protective substrate wafer via a protective sheet that is disposed on the protective substrate wafer without being bonded to the protective substrate wafer. A method of manufacturing a liquid ejecting head, wherein the liquid ejecting head is bonded to a liquid jet head.

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