JP2005271215A - Manufacturing method for silicon device, manufacturing method for liquid jet head and liquid jet head - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a silicon device that exhibits a good yield rate by eliminating manufacturing defects, a manufacturing method for a liquid jet head and a liquid jet head. <P>SOLUTION: The manufacturing method for a silicon device that has square silicon substrates 30 split from a silicon wafer 130 and at least one of a through hole 31 for a device and a recess 32 for the device in the silicon substrate 30 comprises steps of forming openings 141 opened at least in one surface of the silicon wafer 130 at least at the corner of an area other than an area to be the silicon substrates 30 in the vicinity of the outer edge area of the silicon wafer 130 and then splitting the silicon wafer 130 to manufacture the silicon device. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a silicon device using a silicon substrate formed by dividing a silicon wafer, and in particular, a part of a pressure generating chamber communicating with a nozzle opening for discharging droplets is configured by a diaphragm. The present invention is suitable for application to a manufacturing method of a liquid ejecting head in which a piezoelectric element is formed on the surface of the vibration plate and droplets are ejected by displacement of the piezoelectric layer.

  As the liquid ejecting apparatus, for example, a plurality of pressure generating chambers that generate pressure for ejecting ink droplets by piezoelectric elements or heat generating elements, a common reservoir that supplies ink to each pressure generating chamber, and each pressure generating chamber There is an ink jet recording apparatus including an ink jet recording head having a nozzle opening that communicates with the ink jet recording apparatus. The ink jet recording apparatus applies ejection energy to ink in a pressure generating chamber that communicates with a nozzle corresponding to a print signal. Ink droplets are ejected from the nozzle openings.

  A part of the pressure generation chamber communicating with the nozzle opening for discharging ink droplets is constituted by a vibration plate, and the vibration plate is deformed by a piezoelectric element to pressurize the ink in the pressure generation chamber to discharge ink droplets from the nozzle opening. Two types of ink jet recording heads have been put into practical use: those using a longitudinal vibration mode piezoelectric actuator that extends and contracts in the axial direction of the piezoelectric element, and those using a flexural vibration mode piezoelectric actuator.

  Here, as a method of manufacturing the latter ink jet recording head, first, a vibration plate and a piezoelectric element are formed on one surface of a silicon wafer to be a flow path forming substrate, and then the movement of the piezoelectric element on the piezoelectric element side of the silicon wafer is performed. A bonding substrate provided with a piezoelectric element holding portion having a space that does not hinder the bonding is bonded. Thereafter, the silicon wafer is etched from the other surface side to form a pressure generating chamber, and then the silicon wafer is divided into a plurality of parts (for example, see Patent Document 1).

  In this way, when a plurality of flow path forming substrates are formed on a single silicon wafer, through holes or recesses such as pressure generation chambers and communication portions are formed on the flow path forming substrate. The region divided as is lower in strength than the other regions. For this reason, in the silicon wafer dividing process or the thinning process by polishing the silicon wafer, etc., the area that becomes the flow path forming substrate in contact with the corner of the remaining area other than the area that becomes the low strength flow path forming substrate There is a problem that stress is concentrated on the silicon wafer, and manufacturing defects such as cracks occur in the silicon wafer. In addition, when the silicon wafer that is the flow path forming substrate and the silicon wafer that is the bonding substrate are bonded, the silicon wafer that is the bonding substrate is formed with the piezoelectric element holding portion, and thus the flow path forming substrate. In the silicon wafer, only a region facing the piezoelectric element holding portion is bent and deformed. Even at this time, there is a problem that stress concentrates on a region that becomes a flow path forming substrate in contact with the corner of the remaining region of the silicon wafer, resulting in manufacturing defects such as cracks. Such a problem exists not only in a liquid jet head such as an ink jet recording head but also in a silicon device manufacturing method using a rectangular silicon substrate formed by dividing a silicon wafer. .

JP 2002-036547 A (Figs. 3-4, pages 6-7)

  In view of such problems, it is an object of the present invention to provide a silicon device manufacturing method, a liquid ejecting head manufacturing method, and a liquid ejecting head that eliminates manufacturing defects and has a high yield.

A first aspect of the present invention for solving the above-described problem is a method for manufacturing a silicon device having a rectangular silicon substrate divided from a silicon wafer and having at least one of a device through hole and a device recess in the silicon substrate. An opening that opens to at least one surface of the silicon wafer is formed in at least corners of the remaining region other than the region that becomes the silicon substrate in the vicinity of the outer edge region of the silicon wafer, and then the silicon wafer A plurality of silicon devices are formed by dividing the above-mentioned silicon device.
In the first aspect, by forming an opening in a predetermined region of the silicon wafer, a weakened portion that is more fragile than the outer edge region is formed, and stress is prevented from concentrating around the weakened portion, thereby cracking the silicon device. It is possible to prevent manufacturing defects such as the above, and improve the yield.

According to a second aspect of the present invention, there is provided a silicon device manufacturing method according to the first aspect, wherein a plurality of the openings are formed in each of the corners.
In the second aspect, the strength of the corners can be easily adjusted by forming a plurality of openings.

According to a third aspect of the present invention, in the first or second aspect, the silicon device manufacturing method is characterized in that the opening includes a through-hole penetrating the silicon wafer in a thickness direction.
In the third aspect, the through hole serving as the opening can be easily formed with high accuracy.

According to a fourth aspect of the present invention, in any one of the first to third aspects, the inner surface of the opening is formed in a direction crossing a crystal plane orientation perpendicular to the surface of the silicon wafer. There is a method for manufacturing a device.
In the fourth aspect, it is possible to prevent the strength around the opening from being significantly lowered and prevent the occurrence of cracks and the like.

According to a fifth aspect of the present invention, in any one of the first to fourth aspects, the device through-hole or the device recess is formed in a region to be the silicon substrate of the silicon wafer, and the opening is simultaneously formed. The present invention resides in a method for manufacturing a silicon device.
In the fifth aspect, the opening can be formed without increasing the number of manufacturing steps, and the cost can be prevented.

According to a sixth aspect of the present invention, in any one of the first to fifth aspects, the opening is formed by anisotropically etching the silicon wafer.
In the sixth aspect, the opening can be formed easily and with high accuracy.

According to a seventh aspect of the present invention, in any one of the first to sixth aspects, the silicon device includes a pressure generating chamber that communicates with a nozzle opening, and is provided via a diaphragm so that the pressure is increased. A flow path forming substrate having a piezoelectric element that causes a pressure change in the generation chamber; and a reservoir unit that is bonded to a surface of the flow path forming substrate on the piezoelectric element side and serves as a common liquid chamber of the pressure generation chamber. In the method of manufacturing a liquid ejecting head, the liquid ejecting head is a bonded body with a reservoir forming substrate, and the silicon substrate is the reservoir forming substrate.
In the seventh aspect, stress can be prevented from concentrating on a predetermined region of the silicon wafer, and production defects such as cracks can be prevented from occurring in the flow path forming substrate and the reservoir forming substrate. Can be improved.

According to an eighth aspect of the present invention, in any one of the first to sixth aspects, the silicon device is provided with a pressure generating chamber communicating with a nozzle opening, and provided via a diaphragm. A flow path forming substrate having a piezoelectric element that causes a pressure change in the generation chamber; and a reservoir unit that is bonded to a surface of the flow path forming substrate on the piezoelectric element side and serves as a common liquid chamber of the pressure generation chamber. In the method of manufacturing a liquid ejecting head, the liquid ejecting head is a bonded body with a reservoir forming substrate, and the silicon substrate is the flow path forming substrate.
In the eighth aspect, it is possible to prevent stress from concentrating on a predetermined region of the silicon wafer on which the flow path forming substrate is formed and to prevent manufacturing defects such as cracks in the flow path forming substrate. And the yield can be improved.

According to a ninth aspect of the present invention, there is provided a liquid jet head formed by the manufacturing method according to the seventh or eighth aspect.
In the ninth aspect, a highly reliable liquid ejecting head can be provided.

Hereinafter, the present invention will be described in detail based on embodiments.
(Embodiment)
FIG. 1 is an exploded perspective view showing a liquid jet head according to an embodiment of the present invention, and FIG. 2 is a plan view and a cross-sectional view of FIG. In this embodiment, the flow path forming substrate 10 constituting the liquid ejecting head is made of a silicon single crystal substrate having a plane orientation (110), and an elastic film 50 made of silicon dioxide previously formed by thermal oxidation is formed on one surface thereof. Is formed. In this flow path forming substrate 10, pressure generation chambers 12 partitioned by a plurality of partition walls 11 are arranged in parallel in the width direction (parallel direction of nozzle openings) by performing anisotropic etching from the other side. Two rows are formed. Further, on the outside of the longitudinal direction of the pressure generating chambers 12 in each row (the direction orthogonal to the direction in which the nozzle openings are arranged in parallel), the pressure generating chambers 12 communicate with reservoir portions 31 provided on a reservoir forming substrate 30 described later. The communication part 13 which comprises the reservoir | reserver 100 used as these common liquid chambers is formed. The communication portion 13 is in communication with one end portion in the longitudinal direction of each pressure generating chamber 12 via the liquid supply path 14. The pressure generating chamber 12 is formed by anisotropic etching using an alkaline solution such as KOH until it substantially passes through the flow path forming substrate 10 and reaches the elastic film 50. Here, the amount of the elastic film 50 that is affected by the alkaline solution for etching the silicon single crystal substrate is extremely small.

  In addition, a nozzle plate 20 having a nozzle opening 21 formed on the opening surface side of the flow path forming substrate 10 on the side opposite to the liquid supply path 14 of each pressure generating chamber 12 is provided with an adhesive, a heat welding film, or the like. It is fixed through. That is, in this embodiment, two rows of nozzle openings 21 are provided in one liquid ejecting head.

  On the other hand, an insulator film 55 is formed on the elastic film 50 on the side opposite to the opening surface of the flow path forming substrate 10, and a lower electrode film 60 made of metal and titanium are formed on the insulator film 55. A piezoelectric element 300 formed by sequentially laminating a piezoelectric layer 70 made of lead zirconate acid (PZT) or the like and an upper electrode film 80 made of metal is formed. Here, the piezoelectric element 300 refers to a portion including the lower electrode film 60, the piezoelectric layer 70, and the upper electrode film 80. In the present embodiment, the lower electrode film 60 is used as a common electrode of the piezoelectric element 300 and the upper electrode film 80 is used as an individual electrode of the piezoelectric element 300. However, there is no problem even if this is reversed for convenience of a drive circuit and wiring. In the example described above, the lower electrode film 60, the elastic film 50, and the insulator film 55 of the piezoelectric element 300 function as a diaphragm. In addition, a lead electrode 90 is extended as a lead-out wiring led out from the vicinity of one longitudinal end of the upper electrode film 80 of the piezoelectric element 300 to the two rows of pressure generation chambers 12 of the flow path forming substrate 10. The lead electrode 90 is electrically connected to the driving IC 110 (to be described later) via a bonding wire 111 through the connection hole 33.

  On the flow path forming substrate 10 on which such a piezoelectric element 300 is formed, a reservoir forming substrate 30 having a reservoir portion 31 that constitutes at least a part of the reservoir 100 is joined. In this embodiment, the reservoir portion 31 is formed across the reservoir forming substrate 30 in the thickness direction and across the width direction of the pressure generating chamber 12, and as described above, the communication portion of the flow path forming substrate 10 is formed. The reservoir 100 is connected to the pressure generating chamber 12 and serves as a common liquid chamber.

  In addition, two piezoelectric element holding portions 32 having a space that does not hinder the movement of the piezoelectric element 300 are provided in a region facing the piezoelectric element 300 of the reservoir forming substrate 30 corresponding to each row of the piezoelectric elements 300. ing. Further, a connection hole 33 formed by penetrating the reservoir forming substrate 30 in the thickness direction is provided between the two piezoelectric element holding portions 32 of the reservoir forming substrate 30. The lead electrode 90 that is a lead-out wiring led out from each piezoelectric element 300 is exposed in the connection hole 33 in the vicinity of the end, and the lead electrode 90 is provided on the reservoir forming substrate 30 in the connection hole 33. Each of the terminals of the driving IC 110 for driving each piezoelectric element 300 is connected via a bonding wire 111.

  Examples of such a reservoir forming substrate 30 include glass, ceramic, metal, plastic, and the like, but it is preferable to use a material substantially the same as the coefficient of thermal expansion of the flow path forming substrate 10, and in this embodiment, It was formed using a silicon single crystal substrate having a plane orientation (110) of the same material as the flow path forming substrate 10. In the reservoir forming substrate 30 made of such a silicon single crystal substrate, similarly to the pressure generating chamber 12 of the flow path forming substrate 10, the reservoir portion 31 and the piezoelectric element are held by anisotropic etching using an alkaline solution such as KOH. The part 32 can be formed.

  As will be described in detail later, a plurality of such reservoir forming substrates 30 are integrally formed on a silicon wafer for reservoir forming substrates made of a silicon single crystal substrate. Then, after the silicon wafer for reservoir formation substrate is joined to the silicon wafer for flow path formation substrate in which a plurality of flow path formation substrates 10 are integrally formed, the silicon wafer for reservoir formation substrate and the silicon wafer for flow path formation substrate 1 can be formed at the same time to form a joined body of the flow path forming substrate 10 and the reservoir forming substrate 30 of one chip size as shown in FIG.

  A compliance substrate 40 is bonded on the reservoir forming substrate 30. A liquid inlet 44 for supplying a liquid to the reservoir 100 is formed in a region facing the reservoir 100 of the compliance substrate 40 by penetrating in the thickness direction. In addition, the region of the compliance substrate 40 other than the liquid inlet 44 in the region facing the reservoir 100 is a flexible portion 43 formed thin in the thickness direction, and the reservoir 100 is sealed by the flexible portion 43. Has been. Compliance is given to the reservoir 100 by the flexible portion 43.

  Hereinafter, an example of a method for manufacturing the liquid jet head according to the present embodiment will be described with reference to FIGS. 3 to 5 are sectional views showing a part of the pressure generation chamber 12 in the longitudinal direction of the silicon wafer, and FIG. 6 is a plan view of the silicon wafer.

  First, as shown in FIG. 3A, a silicon dioxide film constituting an elastic film 50 by thermally oxidizing a flow path forming substrate silicon wafer 120 to be a plurality of flow path forming substrates 10 in a diffusion furnace at about 1100 ° C. 52 is formed on the entire surface. As will be described in detail later, the silicon dioxide film 52 constitutes the elastic film 50 and is used as the mask film 51 when the silicon wafer 120 for flow path forming substrate is etched. Next, as shown in FIG. 3B, a zirconium (Zr) layer is formed on the elastic film 50 (silicon dioxide film 52), and then thermally oxidized in, for example, a diffusion furnace at 500 to 1200 ° C. to form zirconium oxide ( An insulator film 55 made of ZrO2) is formed. Next, as shown in FIG. 3C, for example, after the lower electrode film 60 is formed by laminating platinum and iridium on the insulator film 55, the lower electrode film 60 is patterned into a predetermined shape.

  Next, as shown in FIG. 3 (d), a piezoelectric layer 70 made of, for example, lead zirconate titanate (PZT) and an upper electrode film 80 made of, for example, iridium are connected to a silicon wafer for a flow path forming substrate. The piezoelectric element 300 is formed by patterning the piezoelectric layer 70 and the upper electrode film 80 in regions facing each pressure generating chamber 12.

  Next, as shown in FIG. 4A, a lead electrode 90 is formed. Specifically, for example, a lead electrode 90 made of gold (Au) or the like is formed over the entire surface of the flow path forming substrate silicon wafer 120 and patterned for each piezoelectric element 300. The above is the film forming process. After film formation in this way, as shown in FIG. 6, a reservoir portion 31, a piezoelectric element holding portion 32, a connection hole 33, and the like are formed on a reservoir forming substrate silicon wafer 130 to be the reservoir forming substrate 30. A plurality of reservoir forming substrates 30 are integrally formed. Here, the reservoir section 31, the piezoelectric element holding section 32, and the connection hole 33 can be formed by anisotropically etching the reservoir forming substrate silicon wafer 130 using an alkaline solution such as KOH. Since the piezoelectric element holding portion 32 is formed shallowly without penetrating the reservoir forming substrate silicon wafer 130, it is formed by half-etching the reservoir forming substrate silicon wafer 130 halfway in the thickness direction. Can do. This half etching can be performed by adjusting the etching time.

  In addition, an opening 141 is formed in at least the corner of the remaining region other than the region that becomes the reservoir forming substrate 30 in the vicinity of the outer edge region of the silicon wafer 130 for reservoir forming substrate. In the present embodiment, on the entire surface of the corner portion defined in a triangular shape defined by two sides, one side of the region to be the reservoir forming substrate 30 and one side of the region to be the reservoir forming substrate 30 adjacent thereto. A plurality of openings 141 were formed at predetermined intervals. By such an opening 141, a fragile portion 140 that is weaker than a region other than the region that becomes the reservoir forming substrate 30, that is, the outer edge region is formed. The opening 141 only needs to be weaker than the outer edge region of the reservoir forming substrate silicon wafer 130. For example, the opening 141 penetrates the reservoir forming substrate silicon wafer 130 in the thickness direction, or one surface thereof. It can form by the recessed part opened only in this. In the present embodiment, the opening 141 is formed by forming a through-hole penetrating in the thickness direction in the reservoir forming substrate silicon wafer 130.

  By forming the opening 141 in the reservoir forming substrate silicon wafer 130 in this manner, the fragile portion 140 that is more fragile than the outer edge region can be formed, and a flow path that becomes the flow path forming substrate 10 in a later step. When bonded to the formation substrate silicon wafer 120, the stress is prevented from concentrating on a region close to the fragile portion 141 of the flow passage formation substrate silicon wafer 120, that is, a region to be the flow passage formation substrate 10, It is possible to prevent production defects such as cracks from occurring in the silicon wafer 120 for flow path forming substrate.

  The plurality of openings 141 constituting the fragile portion 140 can be formed simultaneously when the plurality of reservoir forming substrates 30 are integrally formed on the reservoir forming substrate silicon wafer 130. That is, the opening 141 can be formed simultaneously with the reservoir 31 and the like by anisotropically etching the reservoir forming substrate silicon wafer 130 using an alkaline solution such as KOH. As a result, the opening 141 can be formed easily and with high precision, and a process for forming the opening 141 is not required, and an increase in the manufacturing process is prevented, resulting in a high manufacturing cost. Can be prevented.

  Further, the inner surface of the opening 141 is a crystal plane orientation orthogonal to the surface formed by anisotropic etching, that is, the (111) surface which is the inner surface of the reservoir 31, the piezoelectric element holding portion 32, and the connection hole 33. The crossing direction is preferable. This is because if the inner surface of the opening 141 is formed with the (111) plane, cracks are likely to occur along the (111) plane, and the strength around the fragile portion 140 formed by the opening 141 becomes too fragile. This is because the periphery of the fragile portion 140 may be destroyed.

  Next, as shown in FIG. 4B, the reservoir forming substrate silicon in which the reservoir portion 31, the piezoelectric element holding portion 32, the connection hole 33, and the fragile portion 140 are provided on the piezoelectric element 300 side of the flow path forming substrate 10. The wafer 130 is bonded. At this time, the flow path forming substrate silicon wafer 120 is bent and deformed toward the reservoir forming substrate silicon wafer 130 in a region facing the reservoir portion 31, the piezoelectric element holding portion 32, the connection hole 33, and the fragile portion 140. This prevents stress from concentrating on a region close to the fragile portion 140 of the flow path forming substrate silicon wafer 120, that is, a region that becomes the flow path forming substrate 10. Production defects can be prevented and yield can be improved.

  Next, as shown in FIG. 4C, a mask film 51 provided on the surface opposite to the surface on which the piezoelectric element 300 of the silicon wafer 120 for the flow path forming substrate to be the flow path forming substrate 10 is provided. Is formed into a predetermined shape, and the flow path forming substrate silicon wafer 120 is anisotropically etched through the patterned mask film 51, thereby providing a flow path having the pressure generation chamber 12, the communication path 13, and the liquid supply path 14. A plurality of formation substrates 10 are integrally formed. Next, as shown in FIG. 5, the flow path forming substrate silicon wafer 120 and the reservoir forming substrate silicon wafer 130 are divided at the same time, so that the flow path forming substrate 10 having one chip size as shown in FIG. A joined body of the reservoir forming substrate 30 is used. At this time, since the region where the fragile portion 140 is formed is cut, the fragile portion 140 does not remain on the reservoir forming substrate 30. The flow path forming substrate silicon wafer 120 and the reservoir forming substrate silicon wafer 130 can be divided by, for example, dicing using a diamond cutter. Thereafter, the nozzle plate 20 provided with the nozzle openings 21 is bonded to the surface side of the flow path forming substrate 10 where the pressure generating chambers 12 and the like are opened, and the compliance substrate 40 is bonded to the reservoir forming substrate 30. A liquid ejecting head can be formed.

(Other embodiments)
As mentioned above, although embodiment of this invention was described, this invention is not limited to what was mentioned above. For example, in the above-described embodiment, the opening 141 is formed at the same time as the reservoir 31. However, the present invention is not particularly limited thereto. For example, the opening 141 is formed in the reservoir forming substrate silicon wafer 130 and the piezoelectric portion 31 and the piezoelectric portion. The element holding part 32 may be formed in a separate process. Of course, the method of forming the opening 141 is not limited to wet etching, and may be formed by dry etching, for example.

  Further, for example, in the above-described embodiment, the silicon wafer 120 for the flow path formation substrate and the silicon wafer 130 for the reservoir formation substrate are used as the silicon wafer having the plane orientation (110). For example, a silicon wafer having a plane orientation (111) may be used. Further, for example, in the above-described embodiment, a plurality of the openings 141 are formed at the corners defined in the region to be the reservoir forming substrate 30 of the silicon wafer 130 for reservoir forming substrate. Instead, for example, one large through hole or an opening made of a recess may be formed in each corner of the remaining region other than the region to be the reservoir forming substrate 30. In this case, if the weakened portion formed by the opening becomes significantly weaker than the region that becomes the reservoir forming substrate 30, the portion is easily broken, so the size is adjusted to the strength of the region that becomes the reservoir forming substrate 30. It may be provided as appropriate. In the above-described embodiment, the opening 141 is formed only at the corner of the remaining region other than the region to be the reservoir forming substrate 30 of the silicon wafer 130 for reservoir forming substrate. For example, the opening 141 may be formed in the entire remaining area other than the area to be the reservoir forming substrate 30.

  Furthermore, in the above-described embodiment, the piezoelectric element holding portion 32 is provided on the reservoir forming substrate 30, but the invention is not particularly limited thereto. For example, in the thickness direction in the region facing the piezoelectric element 300 of the reservoir forming substrate. A penetrating piezoelectric element holding hole may be provided. In this case, for example, the surfaces of the piezoelectric element 300 and the lead electrode 90 may be covered with an insulating film made of an inorganic insulating material to prevent the piezoelectric layer 70 from being destroyed due to moisture (humidity).

  In the above-described embodiment, the weakened portion 140 is formed in the reservoir forming substrate silicon wafer 130. However, the present invention is not particularly limited thereto. For example, the flow path forming substrate 10 of the flow path forming substrate silicon wafer 120 is used. The weakened portion may be formed by forming an opening at least at the corner of the remaining region other than the region to be. Note that the flow path forming substrate silicon wafer 120 is also stressed during the dividing process or the thinning process by polishing or the like, so that the fragile portion prevents the flow path forming substrate 10 from being broken by the stress at this time. Can do. Further, since a metal film such as the lower electrode film 60 is formed on one surface of the flow path forming substrate silicon wafer 120, the coefficient of thermal expansion between the metal film and the silicon wafer is formed on the flow path forming substrate silicon wafer 120. Due to the difference between the two and the shrinkage of the metal film, a stress is applied, and the flow path forming substrate silicon wafer 120 is likely to have manufacturing defects such as cracks. Such a manufacturing failure also prevents a stress from concentrating on the flow path forming substrate silicon wafer 120 by forming a fragile portion formed by an opening in the flow path forming substrate silicon wafer 120, and thus cracks, etc. Can be prevented from occurring.

  Further, in the above-described embodiment, the thin film type liquid jet head manufactured by applying the film forming and lithography processes is taken as an example. However, the present invention is not limited to this. For example, a green sheet is pasted or the like. The present invention can also be applied to a thick film type liquid jet head formed by this method. Furthermore, in the above-described embodiments, recording heads used in image recording apparatuses such as printers, color material ejection heads used in the production of color filters such as liquid crystal displays, organic EL displays, electrode formation such as FEDs (surface emitting displays), etc. The method of manufacturing a liquid jet head such as an electrode material jet head used in manufacturing and a bio-organic matter jet head used in biochip manufacturing has been described as an example. The present invention is widely applied to a method of manufacturing a silicon device using a silicon wafer. It is what. That is, in the above-described embodiment, the reservoir forming substrate 30 is exemplified as a silicon substrate used for the silicon device, and the reservoir portion 31 and the piezoelectric element holding of the reservoir forming substrate 30 are respectively used as the device through hole and the device recess in the silicon substrate. The part 32 is illustrated.

1 is a perspective view illustrating an outline of a liquid jet head according to an embodiment of the invention. 2A and 2B are a plan view and a cross-sectional view of a liquid jet head according to an embodiment of the invention. It is sectional drawing which shows the manufacturing process of the head which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the head which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing process of the head which concerns on one Embodiment of this invention. It is a top view which shows the manufacturing process of the head which concerns on one Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 Flow path formation board | substrate, 12 Pressure generation chamber, 13 Communication part, 14 Liquid supply path, 20 Nozzle plate, 21 Nozzle opening, 30 Reservoir formation board, 31 Reservoir part, 40 Compliance board, 50 Elastic film, 55 Insulator film, 60 Lower electrode film, 70 Piezoelectric layer, 80 Upper electrode film, 100 Reservoir, 110 Driving IC, 120 Silicon wafer for flow path forming substrate, 130 Silicon wafer for reservoir forming substrate, 140 Fragile portion, 141 Opening portion, 300 Piezoelectric element

Claims (9)

A method of manufacturing a silicon device having a rectangular silicon substrate divided from a silicon wafer and having at least one of a device through hole and a device recess in the silicon substrate,
Forming an opening that opens on at least one surface of the silicon wafer in at least the corner of the remaining region other than the region serving as the silicon substrate in the vicinity of the outer edge region of the silicon wafer, and then dividing the silicon wafer; A method of manufacturing a silicon device, comprising: forming a plurality of the silicon devices. 2. The method of manufacturing a silicon device according to claim 1, wherein a plurality of the openings are formed in each of the corners. 3. The method of manufacturing a silicon device according to claim 1, wherein the opening includes a through hole penetrating the silicon wafer in a thickness direction. 4. The method of manufacturing a silicon device according to claim 1, wherein an inner surface of the opening is formed in a direction crossing a crystal plane orientation perpendicular to the surface of the silicon wafer. 5. The silicon device according to claim 1, wherein the device through hole or the device recess is formed in the region of the silicon wafer to be the silicon substrate, and the opening is formed at the same time. Production method. 6. The method of manufacturing a silicon device according to claim 1, wherein the opening is formed by anisotropically etching the silicon wafer. 7. The piezoelectric element according to claim 1, wherein the silicon device has a pressure generation chamber communicating with a nozzle opening, and is provided via a diaphragm to cause a pressure change in the pressure generation chamber. And a reservoir forming substrate having a reservoir portion that is bonded to a surface of the flow path forming substrate on the piezoelectric element side and serves as a common liquid chamber of the pressure generating chamber, The method of manufacturing a liquid jet head, wherein the silicon substrate is the reservoir forming substrate. 7. The piezoelectric element according to claim 1, wherein the silicon device has a pressure generation chamber communicating with a nozzle opening, and is provided via a diaphragm to cause a pressure change in the pressure generation chamber. And a reservoir forming substrate having a reservoir portion that is bonded to a surface of the flow path forming substrate on the piezoelectric element side and serves as a common liquid chamber of the pressure generating chamber, The method of manufacturing a liquid jet head, wherein the silicon substrate is the flow path forming substrate. A liquid jet head formed by the manufacturing method according to claim 7.

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