JP2005138310A - Copper foil for electronic part - Google Patents

Copper foil for electronic part Download PDF

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JP2005138310A
JP2005138310A JP2003374453A JP2003374453A JP2005138310A JP 2005138310 A JP2005138310 A JP 2005138310A JP 2003374453 A JP2003374453 A JP 2003374453A JP 2003374453 A JP2003374453 A JP 2003374453A JP 2005138310 A JP2005138310 A JP 2005138310A
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copper foil
temperature
copper
heat
electronic part
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JP4254488B2 (en
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Kenji Yokomizo
健治 横溝
Hajime Sasaki
元 佐々木
Yasuyuki Ito
保之 伊藤
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Hitachi Cable Ltd
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Hitachi Cable Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a copper foil for an electronic part stable in its structure, excellent in heat resistance, causing no shrinkage, not changing a wiring pitch and excellent in dimensional stability even if heat-treated at a high temperature by employing a two-layered structure in FPC or TAB. <P>SOLUTION: The rolled copper foil containing 10 wt.ppm or below of oxygen and 0.01-0.20 wt.% of Zr and used in the lamination with a polyimide film is preliminarily heat-treated at 350-550°C before laminated to the polyimide film to recrystallize and organize copper crystal particles. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、FPC(フレキシブルプリント配線板)やTAB(Tape Automated Bonding)等の配線パターン用導体として用いられる電子部品用銅箔に関するものである。   The present invention relates to a copper foil for electronic parts used as a conductor for wiring patterns such as FPC (flexible printed wiring board) and TAB (Tape Automated Bonding).

電子機器の小型化、軽量化、高密度化に対応した配線材料やICパッケージング材料として、銅箔をポリイミド樹脂フィルムなどに貼り合わせて銅箔をエッチングして配線パターンを形成したFPCやTAB用のフィルムキャリアが広く用いられている。   For FPC and TAB, in which wiring patterns are formed by bonding copper foil to polyimide resin film, etc., and etching copper foil as wiring materials and IC packaging materials for miniaturization, weight reduction, and densification of electronic devices These film carriers are widely used.

FPCやTAB用フィルムキャリアに使用される銅箔には、電解銅箔よりも屈曲性に優れた圧延銅箔が用いられることが多い。圧延銅箔の素材には、タフピッチ銅(酸素濃度100〜500重量ppm)、無酸素銅(酸素濃度10重量ppm以下)、あるいは無酸素銅に微量成分を添加して無酸素銅の軟化温度を低下させたものが用いられ(例えば、特許文献1参照)、これらのインゴットを熱間圧延した後、所定の厚さまで冷間圧延と焼鈍とを繰り返して圧延銅箔が製造される。その後、樹脂基板との接着性を向上させるため、圧延銅箔には表面に粗化めっきが施される。粗化めっき後の銅箔は裁断された後、樹脂基板と貼り合わされる。銅箔と樹脂との貼り合わせには、例えばエポキシ等の熱硬化性樹脂からなる接着剤が用いられ、貼り合わせ後、130〜170℃の温度で数時間〜数十時間加熱して硬化させられる。次に、銅箔をエッチングして種々の回路パターンが形成される。   In many cases, a rolled copper foil that is more flexible than an electrolytic copper foil is used as a copper foil used for a film carrier for FPC or TAB. The rolled copper foil material is made of tough pitch copper (oxygen concentration 100-500 ppm by weight), oxygen-free copper (oxygen concentration 10 ppm by weight or less), or a trace component added to oxygen-free copper to increase the softening temperature of oxygen-free copper. A lowered one is used (for example, see Patent Document 1), and after hot rolling these ingots, cold rolling and annealing are repeated to a predetermined thickness to produce a rolled copper foil. Thereafter, the surface of the rolled copper foil is roughened to improve the adhesion to the resin substrate. The copper foil after the rough plating is cut and then bonded to the resin substrate. For the bonding of the copper foil and the resin, for example, an adhesive made of a thermosetting resin such as epoxy is used, and after the bonding, it is cured by heating at a temperature of 130 to 170 ° C. for several hours to several tens of hours. . Next, various circuit patterns are formed by etching the copper foil.

このように、FPCやフィルムキャリアの構造として従来から、ポリイミド樹脂の基板フィルムと銅箔をエポキシ樹脂等からなる接着剤層を介して積層する三層構造が用いられてきた。しかし近年、従来のはんだより融点の高い鉛フリーはんだが接続に使用される等の理由によって、耐熱性の劣る接着剤層を用いることなく直接ポリイミド樹脂層と銅箔を積層する二層構造が広く用いられるようになってきた。
特開2001−262296号公報
As described above, a three-layer structure in which a polyimide resin substrate film and a copper foil are laminated via an adhesive layer made of an epoxy resin or the like has been conventionally used as a structure of an FPC or a film carrier. However, in recent years, a two-layer structure in which a polyimide resin layer and a copper foil are directly laminated without using an adhesive layer with inferior heat resistance due to reasons such as the use of lead-free solder having a higher melting point than conventional solders is widely used. It has come to be used.
JP 2001-262296 A

二層構造の場合はポリイミド樹脂を銅箔と直接接着させることから、製造時に300℃以上の温度で加圧することが必要となる。しかしながら、従来用いられている圧延銅箔の軟化温度は250℃以下であるため、加熱後の銅箔の組織が安定せず、強度が落ちてその後のラインハンドリングが悪化したりすることがあった。   In the case of a two-layer structure, the polyimide resin is directly bonded to the copper foil, so that it is necessary to pressurize at a temperature of 300 ° C. or higher during production. However, since the softening temperature of the conventionally used rolled copper foil is 250 ° C. or less, the structure of the copper foil after heating is not stable, and the strength may drop and the subsequent line handling may deteriorate. .

また、二層構造は、従来の三層構造と比較して寸法安定性に優れるが、ファインピッチ化の進行により、使用時の寸法安定性が問題となる。即ち、パターン形成後に、プリント配線板同士を接合したり、狭ピッチ化が進んでいる集積チップをマウントしたりするときの熱処理は、鉛フリーはんだの採用などにより、高温(250℃程度)で処理される傾向にある。この際、回路を形成している銅箔は加熱により収縮する傾向にあり、使用に際して配線パターンのピッチが変化し、安定して配線パターン同士が接続できなくなるという問題があった。   In addition, the two-layer structure is excellent in dimensional stability as compared with the conventional three-layer structure, but the dimensional stability during use becomes a problem due to the progress of fine pitch. In other words, after pattern formation, heat treatment when bonding printed wiring boards or mounting an integrated chip with a narrow pitch is performed at a high temperature (about 250 ° C.) by using lead-free solder. Tend to be. At this time, the copper foil forming the circuit has a tendency to shrink by heating, and the pitch of the wiring patterns changes during use, and there is a problem that the wiring patterns cannot be connected stably.

従って、本発明の目的は、二層構造の採用により高温で加熱処理される場合でも、組織が安定し耐熱性に優れ、銅箔の収縮が生じずに配線ピッチが変化することなく寸法安定性に優れた電子部品用銅箔を提供することにある。   Accordingly, the object of the present invention is to provide a stable structure and excellent heat resistance even when heat treatment is performed at a high temperature by adopting a two-layer structure, and to achieve dimensional stability without changing the wiring pitch without causing shrinkage of copper foil It is in providing the copper foil for electronic components excellent in.

上記目的を達成するため、本発明者らは以下の2つの対策を講じた。
第一には、銅箔の材料として従来の無炭素銅やタフピッチ銅でなく、耐熱温度を上げる添加元素を加えることにより、300〜400℃程度の温度で加熱処理されても銅箔の結晶組織を安定化させる。
第二には、銅箔使用時の加熱による銅箔の収縮は、圧延加工後における銅箔を構成する銅結晶粒の再結晶組織化に起因していると考えられるため、銅箔使用前に予め熱処理を施して銅箔を収縮させて銅箔使用時の銅結晶粒を再結晶組織化させておくことにより、使用時の加熱による収縮を抑える。
In order to achieve the above object, the present inventors have taken the following two measures.
First, the crystal structure of copper foil is not affected by conventional carbon-free copper or tough pitch copper as a copper foil material, but by adding an additive element that increases the heat-resistant temperature, even if heat treatment is performed at a temperature of about 300 to 400 ° C. To stabilize.
Secondly, the shrinkage of the copper foil due to heating when using the copper foil is thought to be due to the recrystallized texture of the copper crystal grains constituting the copper foil after the rolling process. By performing heat treatment in advance and shrinking the copper foil to recrystallize the copper crystal grains when the copper foil is used, shrinkage due to heating during use is suppressed.

即ち、本発明の電子部品用銅箔は、酸素含有量が10重量ppm以下であり、Zrを0.01〜0.20重量%含有し、樹脂基板と貼り合わせて使用される圧延銅箔であって、前記樹脂基板と貼り合わせる前に予め所定温度で熱処理が施されて銅結晶粒が再結晶組織化されていることを特徴とする。   That is, the copper foil for electronic components of the present invention is a rolled copper foil having an oxygen content of 10 ppm by weight or less, containing 0.01 to 0.20 wt% of Zr, and being bonded to a resin substrate. The copper crystal grains are recrystallized by heat treatment at a predetermined temperature before being bonded to the resin substrate.

前記所定温度は、二層構造において、樹脂基板がキャスティング法において製造される温度以上であること、具体的には、例えば、350℃以上550℃以下、特に400℃以上500℃以下であることが好ましい。   In the two-layer structure, the predetermined temperature is equal to or higher than the temperature at which the resin substrate is manufactured by the casting method, specifically, for example, 350 ° C. or higher and 550 ° C. or lower, particularly 400 ° C. or higher and 500 ° C. or lower. preferable.

前記樹脂基板を、ポリイミドフィルムとすることができる。   The resin substrate can be a polyimide film.

本発明の電子部品用銅箔によれば、Zrを所定量添加しているため耐熱温度が向上し、ポリイミド樹脂と銅箔との接着時や、プリント配線板同士の接合時等の加熱の際においても、銅箔の結晶組織が安定し、強度が落ちることがない。   According to the copper foil for electronic parts of the present invention, the heat-resistant temperature is improved because a predetermined amount of Zr is added, and when the polyimide resin and the copper foil are bonded or when the printed wiring boards are joined together, However, the crystal structure of the copper foil is stable and the strength does not drop.

また、銅箔を樹脂基板と貼り合わせる前に、銅箔を予め所定温度で熱処理して銅箔の結晶粒を予め再結晶組織化させてあるので、銅箔使用時の加熱による銅箔の収縮を抑えることができる。このため、配線ピッチが変化することなく寸法安定性に優れたものとなる。   In addition, before the copper foil is bonded to the resin substrate, the copper foil is preheated at a predetermined temperature and the crystal grains of the copper foil are recrystallized in advance. Can be suppressed. Therefore, the dimensional stability is excellent without changing the wiring pitch.

本発明について実施例を挙げて説明する。
酸素含有量が10ppmの無酸素銅をベース材とし、Zrを0.01〜0.20wt%添加し、溶解鋳造した。この鋳塊を熱間圧延して厚さ12mmの素材に加工した後、冷間圧延と焼鈍を繰り返す方法で加工して、厚さ200μmの生地材を製造した。さらにこの生地材を焼鈍した後、厚さ10μmまで冷間圧延して試料とした。
The present invention will be described with reference to examples.
An oxygen-free copper having an oxygen content of 10 ppm was used as a base material, and Zr was added in an amount of 0.01 to 0.20 wt%, followed by melt casting. The ingot was hot-rolled and processed into a material having a thickness of 12 mm, and then processed by a method of repeating cold rolling and annealing to produce a fabric material having a thickness of 200 μm. Furthermore, after this dough material was annealed, it was cold-rolled to a thickness of 10 μm to prepare a sample.

以上のようにして製造した試料銅箔について、常温での初期引張強さ、軟化温度と、450℃で4時間加熱した後の引張強さを調べた。更に、250℃で30分の熱処理を行ったあとの収縮量を測定した。測定には約200mmのスパンでマーキングし加熱前後の差を比較した。250℃30分は、接合時の温度などを模擬した温度である。結果を表1に示す。   About the sample copper foil manufactured as mentioned above, initial tensile strength at normal temperature, softening temperature, and tensile strength after heating at 450 ° C. for 4 hours were examined. Further, the amount of shrinkage after heat treatment at 250 ° C. for 30 minutes was measured. For the measurement, marking was performed with a span of about 200 mm, and the difference before and after heating was compared. 250 ° C. for 30 minutes is a temperature simulating the temperature at the time of joining. The results are shown in Table 1.

Figure 2005138310
Figure 2005138310

表1の結果より、試料No.1〜5の耐熱温度はいずれも350℃以上であり、一般にポリイミドをキャスティングする350℃の温度では組織的な影響は小さいことが分る。また、いずれの試料も、450℃4時間後の強度が300N/mm2と十分な強度を有していた。更に、250℃30分の再加熱前後での収縮量で−0.03%を確保することができ、寸法安定性に優れていることが分かった。 From the results in Table 1, sample No. The heat-resistant temperatures of 1 to 5 are all 350 ° C. or higher, and it can be seen that the structural influence is generally small at a temperature of 350 ° C. at which polyimide is cast. In addition, each sample had a sufficient strength of 300 N / mm 2 after 4 hours at 450 ° C. Furthermore, it was confirmed that the amount of shrinkage before and after reheating at 250 ° C. for 30 minutes was −0.03%, and the dimensional stability was excellent.

次に、表1の試料No.1〜5よりもZrの添加量が低い試料No.6、7と添加量が多い試料No.8について、適用可否を調査した。また、従来材として、Zr無添加で熱処理を施していない試料No.9の加熱時の寸法変化量を確認した。結果を表2に示す。   Next, sample Nos. Sample No. 1 in which the amount of Zr added was lower than 1-5. Sample Nos. 6 and 7 with a large amount of addition. 8 was examined for applicability. In addition, as a conventional material, Sample No. The amount of dimensional change during heating of No. 9 was confirmed. The results are shown in Table 2.

Figure 2005138310
Figure 2005138310

表2の結果より、添加量の低い試料No.6、7では、軟化温度は250℃以下であり、ポリイミドをキャスティングする温度では強度が落ちてしまう。このため、その後のラインハンドリング性が悪化するため、適用が困難である。銅箔を厚くしてハンドリング性を改善しても、軟化温度は250℃以下になるため、鉛フリー半田など接合温度が高温になる場合、組織が安定せず、寸法変化が発生しやすいため、適さない。逆に添加量が多いNo.8では、導電率が低下するため配線材料には適さないものとなる。更に、従来材のNo.9では、本実施例のNo.1〜5と比較して250℃30分の加熱後の寸法変化量は大きく、適さない。以上のことにより、本発明の効果が確認された。   From the results in Table 2, the sample No. In 6 and 7, the softening temperature is 250 ° C. or lower, and the strength is lowered at the temperature at which the polyimide is cast. For this reason, since subsequent line handling property deteriorates, application is difficult. Even if the handling property is improved by increasing the thickness of the copper foil, the softening temperature is 250 ° C or lower, so when the bonding temperature is high, such as lead-free solder, the structure is not stable and dimensional changes are likely to occur Not suitable. Conversely, No. with a large addition amount. No. 8 is not suitable for a wiring material because of a decrease in conductivity. Furthermore, the conventional material No. No. 9 of the present example. Compared with 1-5, the dimensional change after heating at 250 ° C. for 30 minutes is large and unsuitable. From the above, the effect of the present invention was confirmed.

なお、本発明では、銅箔にZrを添加しているが、銅箔の耐熱温度が300℃以上確保できるものであれば、Zrの代わりに、或いはZrに加えて他の元素を添加することもできる。このため、Sn、Ag、Feなどの添加も同等の効果が期待できる。   In the present invention, Zr is added to the copper foil, but other elements may be added instead of Zr or in addition to Zr as long as the heat resistance temperature of the copper foil can be secured at 300 ° C. or higher. You can also. For this reason, addition of Sn, Ag, Fe or the like can be expected to have the same effect.

Claims (3)

酸素含有量が10重量ppm以下であり、Zrを0.01〜0.20重量%含有し、樹脂基板と貼り合わせて使用される圧延銅箔であって、前記樹脂基板と貼り合わせる前に予め所定温度で熱処理が施されて銅結晶粒が再結晶組織化されていることを特徴とする電子部品用銅箔。   A rolled copper foil having an oxygen content of 10 ppm by weight or less and containing Zr of 0.01 to 0.20% by weight and being bonded to a resin substrate, A copper foil for electronic parts, wherein the copper crystal grains are recrystallized by heat treatment at a predetermined temperature. 前記所定温度が350℃以上550℃以下であることを特徴とする請求項1記載の電子部品用銅箔。   The copper foil for electronic parts according to claim 1, wherein the predetermined temperature is 350 ° C or higher and 550 ° C or lower. 前記樹脂基板は、ポリイミドフィルムであることを特徴とする請求項1記載の電子部品用銅箔。

The copper foil for electronic parts according to claim 1, wherein the resin substrate is a polyimide film.

JP2003374453A 2003-11-04 2003-11-04 Copper foil for electronic parts and manufacturing method thereof Expired - Fee Related JP4254488B2 (en)

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WO2011052557A1 (en) * 2009-10-30 2011-05-05 Jx日鉱日石金属株式会社 Method of manufacturing double-sided copper-clad laminate, and pair of copper or copper alloy foil sheets used thereupon
WO2011052556A1 (en) * 2009-10-30 2011-05-05 Jx日鉱日石金属株式会社 Copper or copper-alloy foil and method of manufacturing double-sided copper-clad laminate using same
WO2012011607A1 (en) * 2010-07-22 2012-01-26 宇部興産株式会社 Process for production of polyimide film laminate, and polyimide film laminate
EP2743978A4 (en) * 2011-08-12 2015-07-29 Mitsubishi Materials Corp Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module

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Publication number Priority date Publication date Assignee Title
KR101776471B1 (en) 2015-03-30 2017-09-07 제이엑스금속주식회사 Rolled copper foil for secondary battery, and lithium ion secondary battery and lithium ion capacitor using the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011052557A1 (en) * 2009-10-30 2011-05-05 Jx日鉱日石金属株式会社 Method of manufacturing double-sided copper-clad laminate, and pair of copper or copper alloy foil sheets used thereupon
WO2011052556A1 (en) * 2009-10-30 2011-05-05 Jx日鉱日石金属株式会社 Copper or copper-alloy foil and method of manufacturing double-sided copper-clad laminate using same
CN102574364A (en) * 2009-10-30 2012-07-11 Jx日矿日石金属株式会社 Method of manufacturing double-sided copper-clad laminate, and pair of copper or copper alloy foil sheets used thereupon
WO2012011607A1 (en) * 2010-07-22 2012-01-26 宇部興産株式会社 Process for production of polyimide film laminate, and polyimide film laminate
US9187676B2 (en) 2010-07-22 2015-11-17 Ube Industries, Ltd. Production process of polyimide film laminate, and polyimide film laminate
EP2743978A4 (en) * 2011-08-12 2015-07-29 Mitsubishi Materials Corp Substrate for power module, substrate for power module with heat sink, power module, and method for manufacturing substrate for power module

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