JP2005136403A5

JP2005136403A5 -

Info

Publication number: JP2005136403A5
Application number: JP2004297094A
Authority: JP
Filing date: 2004-10-12
Publication date: 2007-08-30
Anticipated expiration: 2024-10-12

Claims

Forming a first conductive layer on the substrate;
Forming a first mask in contact with the first conductive layer by a droplet discharge method;
Etching the first conductive layer using the first mask to form a second conductive layer;
An insulating layer, a first semiconductor layer, and a second semiconductor layer imparted with one conductivity type are stacked over the first mask;
Forming a second mask in contact with the second semiconductor layer by a droplet discharge method;
The first semiconductor layer and the second semiconductor layer are simultaneously etched using the second mask to form a third semiconductor layer and a fourth semiconductor layer imparted with one conductivity type,
Forming a third conductive layer in contact with the fourth semiconductor layer;
Forming a third mask in contact with the third conductive layer by a droplet discharge method;
Using the third mask, the fourth semiconductor layer and the third conductive layer are simultaneously etched to form a fifth semiconductor layer and a fourth conductive layer,
A method for manufacturing a thin film transistor, wherein at least one of the first to third masks is not removed.

Forming a first conductive layer on the substrate;
Forming a first mask in contact with the first conductive layer by a droplet discharge method;
Etching the first conductive layer using the first mask to form a second conductive layer;
Forming a first insulating layer, a first semiconductor layer, and a second insulating layer on the first mask;
Forming a second mask in contact with the second insulating layer by a droplet discharge method;
Etching the second insulating layer using the second mask to form a third insulating layer;
Forming a second semiconductor layer imparted with one conductivity type on the second mask;
Forming a third mask in contact with the second semiconductor layer by a droplet discharge method;
Using the third mask, the first semiconductor layer and the second semiconductor layer are simultaneously etched to form a third semiconductor layer and a fourth semiconductor layer imparted with one conductivity type,
Forming a third conductive layer in contact with the fourth semiconductor layer;
Forming a fourth mask in contact with the third conductive layer by a droplet discharge method;
The fourth with a mask, said fourth semiconductor layer and the third conductive layer are simultaneously etched to form a fifth semiconductor layer and the fourth conductive layer,
A method for manufacturing a thin film transistor, wherein at least one of the first to fourth masks is not removed.

Forming a first semiconductor layer on a substrate;
Forming a first mask in contact with the first semiconductor layer by a droplet discharge method;
Etching the first semiconductor layer using the first mask to form a second semiconductor layer;
Forming a first conductive layer on the first mask;
Forming a second mask in contact with the first conductive layer by a droplet discharge method;
Using the second mask, the first conductive layer is etched to form a second conductive layer,
A method for manufacturing a thin film transistor, wherein at least one of the first mask and the second mask is not removed.

A first conductive layer and a first semiconductor layer imparted with one conductivity type are stacked on the substrate;
Forming a first mask in contact with the first semiconductor layer by a droplet discharge method;
The first semiconductor layer is etched using the first mask to form a second semiconductor layer imparted with one conductivity type,
Forming a third semiconductor layer in contact with the second semiconductor layer;
Forming a second mask in contact with the third semiconductor layer by a droplet discharge method;
Etching the second semiconductor layer and the third semiconductor layer using the second mask to form a fourth semiconductor layer imparted with one conductivity type and a fifth semiconductor layer;
An insulating layer and a second conductive layer are stacked over the second mask;
Forming a third mask in contact with the second conductive layer by a droplet discharge method;
Using said third mask, the second conductive layer is etched to form a third conductive layer,
A method for manufacturing a thin film transistor, wherein at least one of the first to third masks is not removed.

Forming a first semiconductor layer on a substrate;
Forming a first mask in contact with the first semiconductor layer by a droplet discharge method;
Etching the first semiconductor layer using the first mask to form a second semiconductor layer;
On the second semiconductor layer, a third semiconductor layer imparted with one conductivity type and a first conductive layer are stacked.
Forming a second mask in contact with the first conductive layer by a droplet discharge method;
Etching the third semiconductor layer and the first conductive layer using the second mask to form a fourth semiconductor layer imparted with one conductivity type and a second conductive layer;
An insulating layer and a third conductive layer are stacked over the second mask;
Forming a third mask in contact with the third conductive layer by a droplet discharge method;
Using said third mask, the third conductive layer is etched to form the fourth conductive layer,
A method for manufacturing a thin film transistor, wherein at least one of the first to third masks is not removed.

In claim 1 or claim 2,
The method for manufacturing a thin film transistor, wherein the first conductive layer and the third conductive layer are formed by a droplet discharge method, a sputtering method, or an evaporation method.

In claim 1 or claim 2,
The first conductive layer and the third conductive layer are formed using silver, gold, copper, or indium tin oxide.

In claim 3,
The conductive layer is formed by a droplet discharge method, a sputtering method, or an evaporation method.

In claim 3,
The conductive layer is formed using silver, gold, copper, or indium tin oxide.

In claim 4 or claim 5,
The method for manufacturing a thin film transistor, wherein the first conductive layer and the second conductive layer are formed by a droplet discharge method, a sputtering method, or an evaporation method.

In claim 4 or claim 5,
The first conductive layer and the second conductive layer are formed using silver, gold, copper, or indium tin oxide.

Claim 1, in any one of claims 4 or claim 5,
The first to third masks are formed by performing exposure treatment and development treatment using a photomask on an insulating layer formed by a droplet discharge method.

Claim 1, in any one of claims 4 or claim 5,
The method for manufacturing a thin film transistor, wherein the first to third masks are formed using an organic material or a material in which a skeleton structure is formed by a bond of silicon and oxygen.

In claim 2,
The first to fourth masks are formed by performing exposure treatment and development treatment using a photomask on an insulating layer formed by a droplet discharge method.

In claim 2,
The method for manufacturing a thin film transistor, wherein the first to fourth masks are formed using an organic material or a material in which a skeleton structure is formed by a bond of silicon and oxygen.

In claim 3,
The method for manufacturing a thin film transistor, wherein the first mask and the second mask are formed by performing exposure treatment and development treatment using a photomask on an insulating layer formed by a droplet discharge method.

In claim 3,
The method for manufacturing a thin film transistor, wherein the first mask and the second mask are formed using an organic material or a material in which a skeleton structure is formed by a bond of silicon and oxygen.