JP2005129677A5 - - Google Patents

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Publication number
JP2005129677A5
JP2005129677A5 JP2003362961A JP2003362961A JP2005129677A5 JP 2005129677 A5 JP2005129677 A5 JP 2005129677A5 JP 2003362961 A JP2003362961 A JP 2003362961A JP 2003362961 A JP2003362961 A JP 2003362961A JP 2005129677 A5 JP2005129677 A5 JP 2005129677A5
Authority
JP
Japan
Prior art keywords
insulating film
wiring
forming
hole
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003362961A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005129677A (ja
JP4278481B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2003362961A priority Critical patent/JP4278481B2/ja
Priority claimed from JP2003362961A external-priority patent/JP4278481B2/ja
Publication of JP2005129677A publication Critical patent/JP2005129677A/ja
Publication of JP2005129677A5 publication Critical patent/JP2005129677A5/ja
Application granted granted Critical
Publication of JP4278481B2 publication Critical patent/JP4278481B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2003362961A 2003-10-23 2003-10-23 半導体装置の製造方法 Expired - Fee Related JP4278481B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003362961A JP4278481B2 (ja) 2003-10-23 2003-10-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003362961A JP4278481B2 (ja) 2003-10-23 2003-10-23 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2005129677A JP2005129677A (ja) 2005-05-19
JP2005129677A5 true JP2005129677A5 (cg-RX-API-DMAC10.html) 2006-11-30
JP4278481B2 JP4278481B2 (ja) 2009-06-17

Family

ID=34642416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003362961A Expired - Fee Related JP4278481B2 (ja) 2003-10-23 2003-10-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP4278481B2 (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4786680B2 (ja) * 2004-06-10 2011-10-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8432037B2 (en) 2004-06-10 2013-04-30 Renesas Electronics Corporation Semiconductor device with a line and method of fabrication thereof
JP4832807B2 (ja) * 2004-06-10 2011-12-07 ルネサスエレクトロニクス株式会社 半導体装置
CN100578743C (zh) * 2005-12-02 2010-01-06 株式会社爱发科 Cu膜的形成方法
US7488679B2 (en) * 2006-07-31 2009-02-10 International Business Machines Corporation Interconnect structure and process of making the same
KR20230003378A (ko) 2010-02-26 2023-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

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