JP2005122065A - Aligner - Google Patents

Aligner Download PDF

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Publication number
JP2005122065A
JP2005122065A JP2003359789A JP2003359789A JP2005122065A JP 2005122065 A JP2005122065 A JP 2005122065A JP 2003359789 A JP2003359789 A JP 2003359789A JP 2003359789 A JP2003359789 A JP 2003359789A JP 2005122065 A JP2005122065 A JP 2005122065A
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Japan
Prior art keywords
light
exposure
photosensitive material
short wavelength
cut filter
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Granted
Application number
JP2003359789A
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Japanese (ja)
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JP4852225B2 (en
Inventor
Kenji Hata
Nobunari Nadamoto
Yusuke Nakamura
Keigo Ota
Satoshi Shimizu
村 友 祐 中
田 啓 吾 太
水 敏 清
本 信 成 灘
健 志 秦
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Dainippon Printing Co Ltd
大日本印刷株式会社
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Priority to JP2003359789A priority Critical patent/JP4852225B2/en
Publication of JP2005122065A publication Critical patent/JP2005122065A/en
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Publication of JP4852225B2 publication Critical patent/JP4852225B2/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an aligner which can suppress the minimum line width of a pattern of a photosensitive material after developing to the minimum limit and which can keep the edge profile of the pattern in a preferable state. <P>SOLUTION: In the exposure device 1, after a chuck stage 13 is moved by the driving stage 14 of an exposure stage 12 under the control of a controlling device 29 to position a substrate 31 having a photosensitive material 32 stacked thereon with respect to a mask 16, the photosensitive material 32 on the substrate 31 is irradiated with exposure light through the mask 16 by an irradiation optical system 20 to expose the photosensitive material 32 on the substrate 31 along a specified pattern. When a short wavelength cut filter 27 is attached to the irradiation optical system 20, the light emitted from a high voltage mercury lamp 21 passes through the short wavelength cut filter 27 and the light in a deep UV ray region in the range of 270 to 333 nm except for g-line, h-line and i-line rays is cut. The short wavelength cut filter 27 is detachably attached to the irradiation optical system 20. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an exposure apparatus, and more particularly to an exposure apparatus for manufacturing a product such as a color filter by exposing a photosensitive material laminated on a substrate.

Conventional technology

  When forming a pattern of a predetermined shape on the photosensitive material laminated on the substrate, the exposure apparatus irradiates the exposure light through the mask with a light source such as an ultra-high pressure mercury lamp, and the photosensitive material on the substrate is irradiated with the predetermined pattern. In general, the exposure method is used.

  In an exposure apparatus used in such a method, it is common to use a pigment-dispersed light-sensitive material obtained by dispersing a pigment in a resin as the light-sensitive material. As shown in (b), the cross-sectional shape of the pattern after development of the photosensitive material (reference numeral 32) may become an inversely tapered shape, and as a result, the minimum line width (Xb) of the photosensitive material pattern is required. It may become larger than that.

  The present invention has been made in consideration of such points, and is laminated on a substrate so as to minimize the minimum line width of the pattern after development of the photosensitive material and to keep the edge shape of the pattern good. It is an object of the present invention to provide an exposure apparatus that can accurately expose a sensitive material.

  The present invention relates to an exposure stage on which a substrate on which a pigment-dispersed photosensitive material obtained by dispersing a pigment in a resin is laminated, and a mask toward the photosensitive material on the substrate placed on the exposure stage. An irradiation optical system that irradiates exposure light through the light, and the irradiation optical system irradiates light in which light in a wavelength region of 350 nm or less is cut from light in the visible light region and ultraviolet region as the exposure light. An exposure apparatus is provided.

  In the present invention, the irradiation optical system is provided with a light source that emits light in a visible light region and an ultraviolet region, and a detachable attachment to the light source, and a wavelength region of 350 nm or less from the light emitted from the light source. It is preferable to have a short wavelength cut filter that cuts the light. In the present invention, the light source is preferably an ultrahigh pressure mercury lamp.

  According to the present invention, the short wavelength cut filter attached to the irradiation optical system cuts light in the wavelength range of 350 nm or less from visible light and ultraviolet light emitted from the light source. The exposed surface of the light-sensitive material laminated on the substrate (the surface of the light-sensitive material located on the opposite side of the substrate) is exposed to the surface on the substrate side by light on the short wavelength side with low energy and high energy. In comparison, it can be prevented from solidifying relatively quickly. For this reason, the cross-sectional shape of the exposed pattern of the photosensitive material after development can be made into a forward tapered shape, and the minimum line width of the pattern after development of the photosensitive material can be minimized and the edge shape of the pattern can be improved. Can be kept in.

  Further, according to the present invention, since the short wavelength cut filter is detachably provided to the light source, by selectively attaching and removing the short wavelength cut filter in the irradiation optical system, the type of sensitive material and the pattern line The presence or absence of a short wavelength cut filter can be selected according to the required degree of width. For this reason, when there is a margin in the minimum line width of the pattern after development of the photosensitive material, it is possible to remove the short wavelength cut filter from the irradiation optical system, and efficiently use the energy of light on the short wavelength side. Thus, exposure can be performed in a shorter time.

  As described above, according to the present invention, the minimum line width of the pattern after development of the photosensitive material can be minimized and the edge shape of the pattern can be kept good.

  Embodiments of the present invention will be described below with reference to the drawings.

  First, the configuration of an exposure apparatus according to an embodiment of the present invention will be described with reference to FIG.

  As shown in FIG. 1, the exposure apparatus 1 includes an exposure apparatus main body 10 and an irradiation optical system 20 that irradiates exposure light toward the exposure apparatus main body 10.

  Among these, the exposure apparatus main body 10 includes a base 11 and an exposure stage 12 installed on the base 11. Here, the exposure stage 12 is for placing a substrate 31 on which a photosensitive material 32 to be exposed is stacked, and a chuck stage 13 for holding the substrate 31 on which the photosensitive material 32 is stacked in a vacuum chuck system; It has a drive stage 14 that can move the chuck stage 13 in the vertical direction and in a horizontal plane. In addition, it is preferable to use a glass substrate as the substrate 31 placed on the exposure stage 12 (chuck stage 13), and the pigment-dispersed photosensitive material 32 is colored or formed by dispersing a pigment in a resin. It is preferable to use a black sensitive material.

  In such an exposure apparatus body 10, a mask stage 15 to which a mask 16 is attached is provided above the exposure stage 12. Here, the mask 16 shields the exposure light irradiated from the irradiation optical system 20 toward the photosensitive material 32 on the substrate 31 placed on the exposure stage 12 with a predetermined pattern corresponding to the exposure pattern. It is.

  On the other hand, the irradiation optical system 20 includes an ultra-high pressure mercury lamp (light source) 21 and optical elements (parabolic mirror 22 and cold mirror 23) for guiding the light emitted from the ultra-high pressure mercury lamp 21 toward the sensitive material 32 on the substrate 31. And the integrator lens 24 and the spherical mirror 25), and the exposure light (parallel light) can be irradiated toward the photosensitive material 32 on the substrate 31 placed on the exposure stage 12 of the exposure apparatus body 10. It has become.

  In such an irradiation optical system 20, a shutter 26 is provided between the cold mirror 23 and the integrator lens 24, so that light emitted from the ultrahigh pressure mercury lamp 21 can be appropriately shielded and opened. ing. Further, a short wavelength cut filter 27 is detachably provided between the integrator lens 24 and the shutter 26, and has a wavelength range of 350 nm or less from light in the visible light region and ultraviolet region emitted from the ultrahigh pressure mercury lamp 21. The light can be cut.

  Here, the ultrahigh pressure mercury lamp 21 included in the irradiation optical system 20 has spectral characteristics as shown in FIG. That is, the light emitted from the ultra high pressure mercury lamp 21 has several peaks in the range of 270 to 333 nm in addition to the g-line having a peak at 436 nm, the h-line having a peak at 405 nm, and the i-line having a peak at 365 nm. It includes deep ultraviolet (DUV) light. The short wavelength cut filter 27 cuts light in the deep ultraviolet region in the range of 270 to 333 nm, leaving g-line, h-line and i-line from such light. The spectral characteristics shown in FIG. 2 are obtained as a result of measuring the ultrahigh pressure mercury lamp 21 at a rated lamp input (10 kW) and measuring it at a position 1 m in the horizontal direction from the lamp center.

  1, the control device 29 is connected to the exposure stage 12 of the exposure apparatus main body 10 and the irradiation optical system 20 (such as the ultra-high pressure mercury lamp 21 and the shutter 26). On the other hand, by controlling the exposure stage 12 and the irradiation optical system 20 of the exposure apparatus body 10 in conjunction with the operation of a robot arm (not shown) for supplying and discharging the substrate 31 on which the photosensitive material 32 is laminated, The photosensitive material 32 on the substrate 31 can be exposed.

  Next, the operation of the present embodiment having such a configuration will be described.

  In the exposure apparatus 1 shown in FIG. 1, a substrate 31 on which a photosensitive material 32 is laminated is supplied by a robot arm (not shown) and placed on the exposure stage 12 (chuck stage 13).

  In this state, in the exposure apparatus 1, the chuck stage 13 is moved by the drive stage 14 of the exposure stage 12 under the control of the control apparatus 29, and the substrate 31 on which the photosensitive material 32 is stacked is moved with respect to the mask 16. After positioning, the photosensitive material 32 on the substrate 31 is exposed in a predetermined pattern by irradiating the photosensitive material 32 on the substrate 31 with exposure light through the mask 16 by the irradiation optical system 20.

  At this time, when the short wavelength cut filter 27 is attached to the irradiation optical system 20, the light emitted from the ultrahigh pressure mercury lamp 21 passes through the short wavelength cut filter 27, and the g-line, h-line, and i-line. , And light in the deep ultraviolet region in the range of 270 to 333 nm is cut.

  Here, the light on the short wavelength side (especially the light in the deep ultraviolet region in the range of 270 to 333 nm) includes such light on the short wavelength side because the ability to transmit the light-sensitive material 32 is low and the energy is large. When the light-sensitive material 32 on the substrate 31 is exposed by exposure light, the reaction on the exposed surface of the light-sensitive material 32 (the surface of the light-sensitive material 32 located on the side opposite to the substrate 31) proceeds too much. The exposed surface is hardened relatively quickly as compared with the surface on the substrate 31 side. For this reason, the cross-sectional shape of the pattern after development of the photosensitive material 32 exposed by such exposure light becomes an inversely tapered shape as shown in FIG. However, in the present embodiment, the light on the short wavelength side is cut from the exposure light, so that the exposed surface of the photosensitive material 32 hardens relatively quickly compared to the surface on the substrate 31 side. The cross-sectional shape of the exposed pattern of the photosensitive material 32 after development is not a reverse taper shape as shown in FIG. 3B but a forward taper shape as shown in FIG. . As is clear from FIGS. 3A and 3B, the minimum line width (Xa) in the case of the forward tapered shape shown in FIG. 3A is the reverse tapered shape shown in FIG. It becomes smaller than the minimum line width (Xb).

  As described above, according to the present embodiment, the light having a wavelength region of 350 nm or less from the visible light and the ultraviolet light emitted from the ultrahigh pressure mercury lamp 21 by the short wavelength cut filter 27 attached to the irradiation optical system 20. Therefore, the exposed surface of the light-sensitive material 32 laminated on the substrate 31 by the light having a short wavelength side having a low ability to transmit the light-sensitive material 32 and a large energy (the substrate 31 among the light-sensitive materials 32). It is possible to prevent the surface located on the opposite side of the substrate from being hardened relatively quickly compared to the surface on the substrate 31 side. For this reason, the cross-sectional shape of the exposed pattern of the light-sensitive material 32 after development can be a forward taper shape, and the minimum line width of the pattern after development of the light-sensitive material 32 can be minimized and the edge shape of the pattern can be obtained. Can be kept good.

  Further, according to the present embodiment, since the short wavelength cut filter 27 is detachably provided to the ultra high pressure mercury lamp 21, by selectively attaching and detaching the short wavelength cut filter 27 in the irradiation optical system 20, The presence or absence of the short wavelength cut filter 27 can be selected according to the type of the photosensitive material 32 and the required degree of the line width of the pattern. For this reason, when there is a margin in the minimum line width of the pattern after development of the photosensitive material 32, the short wavelength cut filter 27 can be removed from the irradiation optical system 20, and the energy of light on the short wavelength side can be efficiently used. Therefore, the exposure can be performed in a shorter time.

  Next, specific examples of the above-described embodiment will be described.

(Example 1)
Two types of colored light-sensitive materials (A light-sensitive material and B light-sensitive material) having different compositions prepared by dispersing a color pigment in a resin were prepared as light-sensitive materials laminated on a substrate. Here, the A-sensitive material and the B-sensitive material are different from each other in the type of initiator added, and the A-sensitive material has higher absorbance on the short wavelength side than the B-sensitive material. In addition, the light absorbency in the long wavelength side of A sensitive material and B sensitive material is substantially the same. That is, in comparison with the B-sensitive material, the A-sensitive material tends to absorb light on the short wavelength side in addition to light on the long wavelength side, and reaction and solidification on the surface (exposed surface) side of the photosensitive material are likely to proceed. The compositions of the A-sensitive material and the B-sensitive material are as shown in the following tables 1 and 2, respectively.
Of these two types of photosensitive materials, the A sensitive material was exposed in the following three types. That is, as a first aspect, an exposure apparatus equipped with a short wavelength cut filter leaves a g-line, h-line and i-line from light having spectral characteristics as shown in FIG. The exposure was carried out with exposure light obtained by cutting light in the deep ultraviolet region. As a second aspect, exposure was performed with exposure light having spectral characteristics as shown in FIG. 2 by an exposure apparatus not equipped with a short wavelength cut filter. As a third aspect, an exposure apparatus equipped with a short wavelength cut filter and an i-line cut filter leaves a g-line and an h-line from light having spectral characteristics as shown in FIG. 2, and a range of 270 to 365 nm. The exposure was performed with exposure light obtained by cutting the light in

The results are shown in Table 3 below.
As shown in Table 3 above, in the A-sensitive material, the exposed photosensitive material in both the first mode in which the short wavelength cut filter is mounted and the second mode in which the short wavelength cut filter is not mounted. A pattern of a predetermined shape was formed after development. However, in the first aspect, the cross-sectional shape of the pattern after development of the photosensitive material is a forward taper shape (see FIG. 4A), whereas in the second aspect, the pattern after development of the photosensitive material. The cross-sectional shape became a reverse taper shape (see FIG. 4B). In the third mode in which an i-line cut filter is mounted in addition to the short wavelength cut filter, a pattern having a predetermined shape cannot be formed on the exposed photosensitive material.

  On the other hand, regarding the exposure time, in addition to the second mode in which the short wavelength cut filter is not mounted, the first mode in which the short wavelength cut filter is mounted, and the short wavelength cut filter, the i-line cut filter is mounted. In the order of the third aspect, the required exposure time is increased.

  From the above, it can be seen that the A sensitive material preferably takes the second mode in which a short wavelength cut filter is mounted.

  Next, exposure was performed on the B-sensitive material among the above-described two types of photosensitive materials in the same three types as in the case of the A-sensitive material described above.

The results are shown in Table 4 below.
As shown in Table 4 above, in the B-sensitive material, the exposed photosensitive material in both the first mode in which the short wavelength cut filter is mounted and the second mode in which the short wavelength cut filter is not mounted. A pattern having a predetermined shape was formed after development, and the cross-sectional shape of the exposed photosensitive material after development was a forward tapered shape (see FIGS. 5A and 5B). In the third mode in which an i-line cut filter is mounted in addition to the short wavelength cut filter, a pattern having a predetermined shape cannot be formed on the exposed photosensitive material.

  On the other hand, regarding the exposure time, in addition to the second mode in which the short wavelength cut filter is not mounted, the first mode in which the short wavelength cut filter is mounted, and the short wavelength cut filter, the i-line cut filter is mounted. In the order of the third aspect, the required exposure time is increased.

  From the above, the B-sensitive material can take either the first mode in which the short wavelength cut filter is mounted or the second mode in which the short wavelength cut filter is not mounted, but from the viewpoint of exposure time. It is understood that it is preferable to take the second mode in which the short wavelength cut filter is not mounted.

(Example 2)
As a light-sensitive material laminated on a substrate, a black matrix light-sensitive material prepared by dispersing a black pigment in a resin was prepared. The initiator added to the black matrix photosensitive material has high absorbance not only on the long wavelength side but also on the short wavelength side, and the reaction and solidification on the surface (exposed surface) side of the photosensitive material proceed. Cheap. The composition of the black matrix photosensitive material is as shown in Table 5 below.
Such a black matrix sensitive material was exposed in the following two modes. That is, as a first aspect, an exposure apparatus equipped with a short wavelength cut filter leaves a g-line, h-line and i-line from light having spectral characteristics as shown in FIG. The exposure was carried out with exposure light obtained by cutting light in the deep ultraviolet region. As a second aspect, exposure was performed with exposure light having spectral characteristics as shown in FIG. 2 by an exposure apparatus not equipped with a short wavelength cut filter.

  The results are shown in FIGS. FIG. 6 is a graph showing the relationship between the line width shift amount of the pattern after development of the black matrix photosensitive material in the first embodiment and the exposure amount, and FIG. 7 is a diagram after development of the black matrix photosensitive material in the second embodiment. It is a graph which shows the relationship between the line | wire width shift amount of a pattern, and exposure amount. The line width shift amount is an amount representing how much the pattern shape after development of the photosensitive material is deviated from the shape of the exposure light irradiation pattern, and the smaller the amount, the more the resolution of the plate making is improved. Can be made.

  As can be seen by comparing FIG. 6 and FIG. 7, the first with the short-wavelength cut filter mounted, regardless of whether the line width of the photosensitive material pattern is 5 μm line width, 10 μm line width, or 20 μm line width. In this mode, it was possible to suppress the line width shift amount compared to the second mode in which the short wavelength cut filter was not attached.

  Further, as can be seen by comparing FIGS. 8 and 9, the first mode with the short wavelength cut filter is more sensitive than the second mode without the short wavelength cut filter. The edge shape of the later pattern could be kept good.

1 is a diagram showing a configuration of an exposure apparatus according to an embodiment of the present invention. The figure which shows the spectral characteristics of the ultrahigh pressure mercury lamp used with the exposure apparatus shown in FIG. The conceptual diagram which shows the cross-sectional shape of the pattern after image development of the photosensitive material exposed by the exposure apparatus shown in FIG. In Example 1, an SEM showing a cross-sectional shape of a pattern after development of a colored photosensitive material (A photosensitive material) exposed by an exposure apparatus equipped with a short wavelength cut filter and an exposure apparatus not equipped with a short wavelength cut filter (Scanning electron microscope) image. In Example 1, an SEM showing a cross-sectional shape of a pattern after development of a colored photosensitive material (B-sensitive material) exposed by an exposure apparatus equipped with a short wavelength cut filter and an exposure apparatus not equipped with a short wavelength cut filter (Scanning electron microscope) image. In Example 2, the graph which shows the relationship between the line width shift amount of the pattern after image development of the photosensitive material for black matrix exposed by the exposure apparatus with which the short wavelength cut filter was mounted | worn, and exposure amount. In Example 2, the graph which shows the relationship between the line width shift amount of the pattern after development of the photosensitive material for black matrix exposed with the exposure apparatus in which the short wavelength cut filter is not mounted | worn, and exposure amount. In Example 2, the photograph which shows the edge shape of the pattern after development of the photosensitive material for black matrix exposed by the exposure apparatus with which the short wavelength cut filter was mounted | worn. In Example 2, the photograph which shows the edge shape of the pattern after image development of the photosensitive material for black matrices exposed by the exposure apparatus in which the short wavelength cut filter is not mounted | worn.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Exposure apparatus 10 Exposure apparatus main body 11 Base 12 Exposure stage 13 Chuck stage 14 Drive stage 15 Mask stage 16 Mask 20 Irradiation optical system 21 Super high pressure mercury lamp 22 Parabolic mirror 23 Cold mirror 24 Integrator lens 25 Spherical mirror 26 Shutter 27 Short wavelength cut filter 29 Control device 31 Substrate 32 Sensitive material

Claims (3)

  1. An exposure stage on which a substrate on which a pigment-dispersed photosensitive material obtained by dispersing a pigment in a resin is placed;
    An irradiation optical system that irradiates exposure light through a mask toward a photosensitive material on a substrate placed on the exposure stage;
    The exposure optical system irradiates, as the exposure light, light obtained by cutting light in a wavelength region of 350 nm or less from light in a visible light region and an ultraviolet region.
  2.   The irradiation optical system includes a light source that emits light in a visible light region and an ultraviolet region, and a detachable light source that cuts light in a wavelength region of 350 nm or less from the light emitted from the light source. The exposure apparatus according to claim 1, further comprising a wavelength cut filter.
  3.   The exposure apparatus according to claim 1, wherein the light source is an ultra high pressure mercury lamp.
JP2003359789A 2003-10-20 2003-10-20 Exposure apparatus and exposure method Active JP4852225B2 (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008107541A (en) * 2006-10-25 2008-05-08 Toppan Printing Co Ltd Method for manufacturing black matrix for color filter
JP2008122844A (en) * 2006-11-15 2008-05-29 Taiyo Ink Mfg Ltd Phototool for solder resist exposure and solder resist pattern forming method in which exposure processing is performed using the same
JP2008122845A (en) * 2006-11-15 2008-05-29 Taiyo Ink Mfg Ltd Solder resist pattern forming method
JP2008158282A (en) * 2006-12-25 2008-07-10 Toppan Printing Co Ltd Proximity exposure apparatus
JP2011022529A (en) * 2009-07-21 2011-02-03 Mejiro Precision:Kk Light source device and exposure device
JP2015197661A (en) * 2014-04-03 2015-11-09 大日本印刷株式会社 Proximity exposure method and method for manufacturing color filter using proximity exposure method

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189636A (en) * 1985-02-19 1986-08-23 Ushio Inc Exposure method for semiconductor wafer with xenon-mercury vapor discharge lamp
JPH03282475A (en) * 1990-03-30 1991-12-12 Ushio Inc Projection exposing device
JPH0845473A (en) * 1994-07-29 1996-02-16 Toshiba Lighting & Technol Corp High pressure discharge lamp and semiconductor exposure device
JP2001296666A (en) * 2000-04-12 2001-10-26 Orc Mfg Co Ltd Method for exposing substrate and exposure system
JP2002341525A (en) * 2001-05-14 2002-11-27 Fuji Photo Film Co Ltd Positive photoresist transfer material and method for working surface of substrate using the same
JP2003131379A (en) * 2001-10-22 2003-05-09 Fuji Photo Film Co Ltd Photosensitive resin composition, transfer material, method for forming image, color filter, method for manufacturing the same, photomask and method for manufacturing the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61189636A (en) * 1985-02-19 1986-08-23 Ushio Inc Exposure method for semiconductor wafer with xenon-mercury vapor discharge lamp
JPH03282475A (en) * 1990-03-30 1991-12-12 Ushio Inc Projection exposing device
JPH0845473A (en) * 1994-07-29 1996-02-16 Toshiba Lighting & Technol Corp High pressure discharge lamp and semiconductor exposure device
JP2001296666A (en) * 2000-04-12 2001-10-26 Orc Mfg Co Ltd Method for exposing substrate and exposure system
JP2002341525A (en) * 2001-05-14 2002-11-27 Fuji Photo Film Co Ltd Positive photoresist transfer material and method for working surface of substrate using the same
JP2003131379A (en) * 2001-10-22 2003-05-09 Fuji Photo Film Co Ltd Photosensitive resin composition, transfer material, method for forming image, color filter, method for manufacturing the same, photomask and method for manufacturing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008107541A (en) * 2006-10-25 2008-05-08 Toppan Printing Co Ltd Method for manufacturing black matrix for color filter
JP2008122844A (en) * 2006-11-15 2008-05-29 Taiyo Ink Mfg Ltd Phototool for solder resist exposure and solder resist pattern forming method in which exposure processing is performed using the same
JP2008122845A (en) * 2006-11-15 2008-05-29 Taiyo Ink Mfg Ltd Solder resist pattern forming method
JP2008158282A (en) * 2006-12-25 2008-07-10 Toppan Printing Co Ltd Proximity exposure apparatus
JP2011022529A (en) * 2009-07-21 2011-02-03 Mejiro Precision:Kk Light source device and exposure device
JP2015197661A (en) * 2014-04-03 2015-11-09 大日本印刷株式会社 Proximity exposure method and method for manufacturing color filter using proximity exposure method

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