JP2006173527A - Exposure equipment - Google Patents
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Abstract
Description
本発明は露光装置に関する。詳しくは、基板の裏面側への液体の流入を抑制し、基板周辺領域における転写精度の向上を図ると共に、基板裏面の汚染を低減しようとした液浸露光に用いる露光装置に係るものである。 The present invention relates to an exposure apparatus. More specifically, the present invention relates to an exposure apparatus used for immersion exposure that suppresses the inflow of liquid to the back side of the substrate, improves the transfer accuracy in the peripheral region of the substrate, and reduces contamination on the back side of the substrate.
近年の半導体製造プロセスでは、高集積化及びデザインルールの微細化が進み、フォトリソグラフィー技術の領域においても、露光波長の短波長化や高開口率化、位相シフトマスク、変形照明技術などの高解像度技術の提案により、要求される線幅精度の向上に対応している。 In recent semiconductor manufacturing processes, high integration and miniaturization of design rules have progressed, and in the field of photolithography technology, high resolution such as shortening of exposure wavelength and high aperture ratio, phase shift mask, and modified illumination technology are also available. The proposed technology addresses the required line width accuracy.
ここで、露光波長の短波長化や高開口率化の実現においては、光源（レーザ）、マスク基板材料、撮影レンズを中心とした光学材料及びフォトレジスト材料などの新規開発を余儀なくされるといったケースも多く、総合的な技術開発並びに完成度の向上を実現するためには多大な開発資源、資本投入及び開発期間を要するのに加え、これらが開発コストという形で量産化に至った段階においてもプロセス単価の高騰が大きな課題とされている。 Here, in order to reduce the exposure wavelength and increase the aperture ratio, new developments such as light sources (lasers), mask substrate materials, optical materials such as photographic lenses, and photoresist materials are unavoidable. In order to realize comprehensive technological development and improvement of completeness, it takes a lot of development resources, capital investment and development period, and at the stage where these have reached mass production in the form of development costs. Increasing process unit cost is a major issue.
一方、半導体デバイスの微細化の流れは一層速まる傾向にあり、それに対して上記した様な技術開発のスピードが追いつかないといった傾向が最近顕著になってきている。特に、６５ｎｍ〜４５ｎｍ世代のクリティカル工程対応技術として当初有力視されていたＦ２リソグラフィー技術については、総合的な技術完成度の低さが指摘されており、デバイス量産技術として既存のＡｒＦリソグラフィー技術のインフラを利用した延命化を早急に図る必要性が生じている。 On the other hand, the trend of miniaturization of semiconductor devices tends to be further accelerated, and recently, the tendency that the speed of technological development as described above cannot catch up has become remarkable. In particular, the F 2 lithography technology, which was initially regarded as promising as a critical process technology for the 65 nm to 45 nm generation, has been pointed out to have a low overall technical perfection, and the existing ArF lithography technology as a device mass production technology has been pointed out. There is an urgent need to prolong life using infrastructure.
上記の様な必要性に対する最も有効な解決策として、図３（ａ）で示す様に、ウエハステージ１０１にチャックピン１０５で吸着することで支持されたウエハ基板１０２と撮影レンズ１０３の間を空気よりも屈折率の高い液体（例えば、水）１０４を満たした状態で露光処理を行うことにより、見かけ上の開口率を上げて解像度の向上と焦点深度の拡大を図る、いわゆる「液浸露光（ｌｍｍｅｒｓｉｏｎ Ｌｉｔｈｏｇｒａｐｈｙ）技術」が提案されている（例えば、非特許文献１参照。）。
As the most effective solution to the above-described necessity, as shown in FIG. 3A, the air between the
ところで、上記した液浸露光技術は、既存の大半のインフラ技術をそのまま適用可能であるが、一部液浸露光技術に固有の課題が残されている。そして、その課題の１つとして、ウエハ基板の外周領域における露光の問題がある。 By the way, although most of the existing infrastructure technologies can be applied as they are to the above-described immersion exposure technology, some problems inherent to the immersion exposure technology remain. As one of the problems, there is a problem of exposure in the outer peripheral region of the wafer substrate.
即ち、液浸露光は、投影レンズとウエハ基板の間に液体を保持した状態を保ちつつ、ショットフィールドを移動させながらスキャン露光処理を行うことが一般的であるが、ショットフィールドの一部分がウエハ基板の領域外にはみ出す様な領域（図４中符号Ａで示す様な領域。以下、周辺領域と言う。）において、図３（ｂ）で示す様に、少なからずウエハ基板とウエハステージの間の隙間からウエハ基板の裏面側に液体が回り込むことにより、ウエハ基板の裏面やチャックピンなどの汚染が懸念される。そして、ウエハ基板の裏面やチャックピンが汚染されることにより、後続のウエハ基板の二次汚染の問題、更には露光処理のデフォーカスに起因するパターン不良などの工程不良を発生させる可能性もある。 In other words, in immersion exposure, it is common to perform scan exposure processing while moving the shot field while keeping the liquid held between the projection lens and the wafer substrate. As shown in FIG. 3B, in a region that protrudes outside the region (region indicated by symbol A in FIG. 4; hereinafter referred to as a peripheral region), there is at least between the wafer substrate and the wafer stage. There is concern about contamination of the back surface of the wafer substrate, the chuck pins, and the like due to the liquid flowing from the gap to the back surface side of the wafer substrate. Further, contamination of the back surface of the wafer substrate and the chuck pins may cause a problem of secondary contamination of the subsequent wafer substrate, and further cause a process failure such as a pattern failure caused by defocusing of the exposure process. .
また、ウエハ基板の周辺領域の露光処理の前後に、投影レンズとウエハ基板の間に媒介する液体がウエハ基板の裏面側に漏れ込むことにより、液体の流速制御や露光制御（フォーカス、同期精度、液温制御など）自体の安定性が低下してしまい、実効的な理収低下を招いてしまう恐れもある。 Also, before and after the exposure processing of the peripheral area of the wafer substrate, the liquid that mediates between the projection lens and the wafer substrate leaks into the back side of the wafer substrate, so that the liquid flow rate control and exposure control (focus, synchronization accuracy, (Liquid temperature control, etc.) may be less stable and may cause an effective decline in profits.
この様な結果として、パターン不良の発生、パターン転写精度の劣化によるデバイス歩留りの低下、あるいは設備メンテナンス頻度の増大による設備生産性の低下につながってしまう。 As a result, pattern defects occur, device yield decreases due to deterioration of pattern transfer accuracy, or equipment productivity decreases due to an increase in equipment maintenance frequency.
なお、ショットフィールドの一部分がウエハ基板の領域外にはみ出す様な場合には、そもそも当該領域からは製品チップを得ることができないために、こうした領域には露光処理を行わないことにより、ウエハ基板の裏面側への液体の回り込みを抑制することができるとも考えられる。しかし、ウエハ基板の周辺領域についても図４中符号Ｂで示す製品領域と同様に処理を施さなければ、ウエハ基板の周辺領域と製品領域との境界領域に悪影響（例えば、ＣＭＰ（Ｃｈｅｍｉｃａｌ Ｍｅｃｈａｎｉｃａｌ Ｐｏｌｉｓｈｉｎｇ）の研磨性に影響）が生じることが考えられるため、ウエハ基板の周辺領域についても露光処理を施す必要がある。 If a part of the shot field protrudes outside the area of the wafer substrate, a product chip cannot be obtained from the area in the first place. It is also considered that the sneak in of the liquid to the back side can be suppressed. However, if the peripheral region of the wafer substrate is not processed in the same manner as the product region indicated by B in FIG. 4, the boundary region between the peripheral region of the wafer substrate and the product region is adversely affected (for example, CMP (Chemical Mechanical Polishing)). Therefore, it is necessary to perform an exposure process on the peripheral region of the wafer substrate.
本発明は、以上の点に鑑みて創案されたものであって、基板の裏面側への液体の流入を抑制し、基板の周辺領域における転写精度の向上を図ると共に、基板の裏面の汚染を低減することができる露光装置を提供することを目的とするものである。 The present invention was devised in view of the above points, and suppresses the inflow of liquid to the back side of the substrate, improves the transfer accuracy in the peripheral region of the substrate, and prevents contamination of the back side of the substrate. An object of the present invention is to provide an exposure apparatus that can be reduced.
上記の目的を達成するために、本発明に係る露光装置は、基板を支持する支持体本体と、前記基板を囲繞する凸部とを有する支持体と、前記基板に光を照射する光源とを備えると共に、前記光源は、同光源から照射される光の光路上に所定の液体、即ち、光源から照射される光に対する屈折率が空気よりも高い液体が配置された状態で、前記基板に光を照射する様に構成された露光装置において、前記凸部に、前記基板と対向する突起部が形成されている。 In order to achieve the above object, an exposure apparatus according to the present invention includes a support body that supports a substrate, a support that has a convex portion that surrounds the substrate, and a light source that irradiates the substrate with light. The light source includes a predetermined liquid on the optical path of light emitted from the light source, that is, a light having a refractive index higher than that of air is disposed on the substrate. In the exposure apparatus configured to irradiate, projections facing the substrate are formed on the projections.
ここで、基板を囲繞する凸部に基板と対向する突起部が形成されたことによって、基板と支持体との間隙を狭めることができ、液体の基板の裏面側への回り込みを抑制することができる。 Here, the protrusions that face the substrate are formed on the convex portions that surround the substrate, so that the gap between the substrate and the support can be narrowed, and the wraparound of the liquid to the back side of the substrate can be suppressed. it can.
本発明の露光装置では、液体の基板の裏面側への回り込みを抑制することができるために、基板の周辺領域における転写精度の向上が実現すると共に、基板裏面の汚染を低減することができる。 In the exposure apparatus of the present invention, since it is possible to suppress the wraparound of the liquid to the back side of the substrate, it is possible to improve the transfer accuracy in the peripheral region of the substrate and reduce the contamination on the back side of the substrate.
以下、本発明の実施の形態について図面を参照しながら説明し、本発明の理解に供する。
図１は本発明を適用した露光装置の一例を説明するための模式的な断面図であり、図２は本発明を適用した露光装置の一例を用いた液浸露光技術によるフォトリソグラフィーを説明するための模式的な断面図である。ここで示す露光装置１は、ウエハステージ２と投影レンズ筺体３から構成されている。ウエハステージは、ウエハ基板を支持するウエハ基板支持体本体４と、ウエハ基板支持体本体によって支持されたウエハ基板を囲繞する凸部５からなり、ウエハ基板支持体本体にはウエハ基板を真空吸着するチャックピン６が設けられている。また、凸部には、ウエハ基板支持体本体によって支持されたウエハ基板と対向する突起部であるナイフエッジ部７が設けられている。
Hereinafter, embodiments of the present invention will be described with reference to the drawings to facilitate understanding of the present invention.
FIG. 1 is a schematic cross-sectional view for explaining an example of an exposure apparatus to which the present invention is applied, and FIG. 2 explains photolithography by an immersion exposure technique using an example of an exposure apparatus to which the present invention is applied. It is typical sectional drawing for this. The exposure apparatus 1 shown here includes a wafer stage 2 and a projection lens housing 3. The wafer stage includes a wafer substrate support body 4 that supports the wafer substrate and a
また、ウエハステージには、ガス噴射機構１０が設けられ、このガス噴射機構によってウエハ基板の中心領域から外周方向へとウエハ基板の裏面に沿って流れる様な空気あるいは窒素ガス等の不活性ガスの気流を生成する。
Further, the wafer stage is provided with a
更に、ウエハステージには、圧力制御手段１１が設けられ、この圧力制御手段によってウエハ基板の表面側の圧力に対して、ウエハ基板の裏面側の圧力がウエハ基板を支持している間には常に５ｍｍＨｇ以上高くなる様に制御を行なう。
また、ウエハステージには、廃液タンク（図示せず）に接続された廃液ポンプ１３が設けられている。
Further, the wafer stage is provided with a pressure control means 11, and the pressure control means always applies the pressure on the back surface side of the wafer substrate while supporting the wafer substrate to the pressure on the front surface side of the wafer substrate. Control is performed so as to be higher than 5 mmHg.
The wafer stage is provided with a
なお、上記したナイフエッジ部は、ウエハ基板の外周端に対向する様にウエハステージ内縁に沿ってリング状に形成され、その断面構造は水平若しくは水平面に対して緩やかな傾斜（例えば、１５度以下）をもつ上面８と、水平面に対して４５度前後の大きな傾斜角をもつ下面９から構成されている。また、図１中符号ａで示すウエハステージから突き出た幅は１．０ｍｍ〜１．５ｍｍ程度であり、図２中符号ｂで示すウエハ基板支持体本体に支持されるウエハ基板の端面との隙間が約０．５ｍｍ（設計値では０．３ｍｍ前後）となる様に構成されている。
The above-mentioned knife edge portion is formed in a ring shape along the inner edge of the wafer stage so as to face the outer peripheral edge of the wafer substrate, and its cross-sectional structure is gently inclined with respect to the horizontal or horizontal plane (for example, 15 degrees or less). ) And a
なお、ナイフエッジ部は、ウエハステージの上面の高さと、チャッキング後のウエハ基板の上面が略同一高さとなる様に調整を行うことにより、ナイフエッジ部の上面の高さと、図２中符号ｃで示すウエハ基板側面の頂点の高さが略同一となる様に構成されている。 The knife edge portion is adjusted so that the height of the upper surface of the wafer stage and the upper surface of the wafer substrate after chucking are substantially the same height. The height of the apex of the side surface of the wafer substrate indicated by c is substantially the same.
ここで、本実施例では、ガス噴射機構が設けられた露光装置の例を挙げて説明を行っているが、凸部に形成されたナイフエッジ部によって、投影レンズ筺体とウエハ基板の間に保持された液体のウエハ基板の裏面側への回り込みを充分に抑制することができるのであれば、ガス噴射機構は必ずしも設けられる必要は無い。但し、より一層充分に液体の回り込みを抑制するためには、ガス噴射機構が設けられた方が好ましい。 Here, in this embodiment, an example of an exposure apparatus provided with a gas injection mechanism is described, but it is held between the projection lens housing and the wafer substrate by the knife edge portion formed on the convex portion. The gas injection mechanism is not necessarily provided as long as the wraparound of the liquid to the back side of the wafer substrate can be sufficiently suppressed. However, it is preferable to provide a gas injection mechanism in order to further suppress the wraparound of the liquid.
同様に、本実施例では、圧力制御手段が設けられた露光装置の例を挙げて説明を行っているが、凸部に形成されたナイフエッジ部によって、投影レンズ筺体とウエハ基板の間に保持された液体のウエハ基板の裏面側への回り込みを充分に抑制することができるのであれば、圧力制御手段は必ずしも設けられる必要は無い。但し、より一層充分に液体の回り込みを抑制するためには、圧力制御手段が設けられた方が好ましい。 Similarly, in this embodiment, an example of an exposure apparatus provided with a pressure control unit is described. However, the knife edge portion formed on the convex portion holds the projection lens housing and the wafer substrate. The pressure control means does not necessarily need to be provided as long as the spilled liquid can be sufficiently prevented from entering the back side of the wafer substrate. However, it is preferable to provide a pressure control means in order to further suppress the wraparound of the liquid.
また、本実施例では、廃液タンクに接続された廃液ポンプが設けられた露光装置の例を挙げて説明を行っているが、凸部に形成されたナイフエッジ部によって、或いは、凸部に形成されたナイフエッジ部及びガス噴射機構や圧力制御手段によって、投影レンズ筺体とウエハ基板の間に保持された液体のウエハ基板の裏面側への回り込みを充分に抑制することができるのであれば、廃液タンクに接続された廃液ポンプは必ずしも設けられる必要は無い。但し、より一層充分に液体の回り込みを抑制するためには、廃液タンクに接続された廃液ポンプが設けられた方が好ましい。 Further, in this embodiment, an example of an exposure apparatus provided with a waste liquid pump connected to a waste liquid tank is described, but it is formed by a knife edge part formed on a convex part or formed on a convex part. If the knives edge portion and the gas injection mechanism or pressure control means can sufficiently suppress the wraparound of the liquid held between the projection lens housing and the wafer substrate to the back side of the wafer substrate, the waste liquid The waste liquid pump connected to the tank is not necessarily provided. However, it is preferable to provide a waste liquid pump connected to the waste liquid tank in order to suppress the flow of the liquid more sufficiently.
また、本実施例では、ウエハ基板の側面の頂点付近が最もウエハ基板とウエハステージが近接している箇所であるために、ナイフエッジ部の上面の高さがウエハ基板側面の頂点の高さと略同一となる様にナイフエッジ部を形成し、ウエハ基板とウエハステージとの間隙を極力狭めた露光装置を例に挙げて説明を行ったが、ナイフエッジ部の上面の高さがウエハ基板の側面の頂点の高さと異なる高さであったとしても、投影レンズ筺体とウエハ基板の間に保持された液体のウエハ基板の裏面側への回り込みを充分に抑制することができるのであれば、必ずしもナイフエッジ部の上面の高さがウエハ基板の側面の頂点の高さと同一である必要は無い。但し、より一層充分に液体の回り込みを抑制するためには、ナイフエッジ部の上面の高さがウエハ基板の側面の頂点の高さと同一となる様に、ウエハエッジ部を形成した方が好ましい。 Further, in this embodiment, since the vicinity of the apex of the side surface of the wafer substrate is the place where the wafer substrate and the wafer stage are closest, the height of the upper surface of the knife edge portion is substantially the same as the apex height of the side surface of the wafer substrate. Although the explanation has been given by taking an example of an exposure apparatus in which the knife edge portion is formed so as to be the same and the gap between the wafer substrate and the wafer stage is reduced as much as possible, the height of the upper surface of the knife edge portion is the side surface of the wafer substrate Even if the height is different from the height of the apex of the wafer, it is not always necessary to use a knife if the liquid held between the projection lens housing and the wafer substrate can be sufficiently prevented from entering the back side of the wafer substrate. The height of the upper surface of the edge portion need not be the same as the height of the apex of the side surface of the wafer substrate. However, it is preferable to form the wafer edge portion so that the height of the upper surface of the knife edge portion is the same as the height of the apex of the side surface of the wafer substrate in order to further suppress the wraparound of the liquid.
なお、本実施例では、ウエハエッジ部を１箇所のみに形成しているが、同様のナイフエッジ部を鉛直方向に２重、３重と形成し、多段のナイフエッジ部を形成することによっても、より一層充分に液体の回り込みを抑制することができる。 In this embodiment, the wafer edge portion is formed only at one place, but the same knife edge portion is formed in double and triple in the vertical direction, and a multi-stage knife edge portion is formed, The wraparound of the liquid can be further suppressed sufficiently.
以下、上記の様に構成された露光装置を用いて、液浸露光技術によるフォトリソグラフィーを行なう方法について説明を行う（図２参照。）。なお、以下では、露光光としてＡｒＦエキシマレーザを用いる場合を例に挙げて説明を行う。 Hereinafter, a method of performing photolithography using the immersion exposure technique using the exposure apparatus configured as described above will be described (see FIG. 2). In the following description, an ArF excimer laser is used as exposure light as an example.
液浸露光技術を用いたフォトリソグラフィー工程では、先ず、ウエハ基板２０に反射防止膜（図示せず）及びＡｒＦ用フォトレジスト（図示せず）をスピンオフによって塗布し、ベーク処理を行って成膜した後に、ウエハ基板を露光装置のウエハステージへと搬送する。露光装置に搬送されたウエハ基板のアライメントを行なった後、ウエハ基板の裏面側からチャックピンによりウエハ基板の真空吸着を行い、ウエハ基板を支持する。この際、図２中符号ｄで示すウエハステージの上面と、図２中符号ｅで示すチャッキング後のウエハ基板の上面が略同じ高さとなる様に調整を行う。
In the photolithography process using the immersion exposure technique, first, an antireflection film (not shown) and an ArF photoresist (not shown) are applied to the
次に、ガス噴射手段によってウエハ基板の中心領域から外周方向へとウエハ基板の裏面に沿って流れる気流（図２中符号ｆ参照。）を生成すると共に、圧力制御手段によってウエハ基板の表面側の内圧に対してウエハ基板の裏面側の圧力が高くなる様に制御した状態で（図２中符号ｇ参照。）、露光装置の投影レンズ筺体とウエハ基板の間に（詳しくは、投影レンズ筺体とウエハ基板に成膜されたフォトレジスト膜の間に）、水２１（屈折率ｎ＝１．４７）を吐出し、吸引機構により流動させながら、所定の露光条件によりステップアンドスキャン露光を行なう。
なお、同時に廃液ポンプを動作させ、微量ながらウエハ基板の裏面側に回り込もうとした水を回収し、廃棄を行なう（図２中符号ｈ参照。）。
Next, an air flow (see symbol f in FIG. 2) flowing along the back surface of the wafer substrate from the central region of the wafer substrate to the outer circumferential direction is generated by the gas injection means, and at the surface side of the wafer substrate by the pressure control means. In a state in which the pressure on the back side of the wafer substrate is controlled to be higher than the internal pressure (see symbol g in FIG. 2), between the projection lens housing of the exposure apparatus and the wafer substrate (for details, refer to the projection lens housing and Water 21 (refractive index n = 1.47) is discharged between the photoresist films formed on the wafer substrate and flowed by the suction mechanism, and step-and-scan exposure is performed under predetermined exposure conditions.
At the same time, the waste liquid pump is operated to collect a small amount of water that is about to go around to the back side of the wafer substrate and discard it (see symbol h in FIG. 2).
ここで、投影レンズ筺体とウエハ基板の間に吐出する液体は、露光光に対して空気より屈折率の高い液体であればいかなる液体であっても良く、即ち、投影レンズ筺体とウエハ基板の間に液体を介在させない場合と比較して、投影レンズ筺体とウエハ基板の間に液体を介在させることによって露光光の屈折率が高くなるものであれば、いかなる液体であっても良く、必ずしも水を介在させる必要は無い。 Here, the liquid discharged between the projection lens housing and the wafer substrate may be any liquid as long as it has a refractive index higher than that of air with respect to the exposure light, that is, between the projection lens housing and the wafer substrate. As long as the refractive index of the exposure light is increased by interposing the liquid between the projection lens housing and the wafer substrate as compared with the case where no liquid is intervened in the liquid, any liquid can be used, and water is not necessarily used. There is no need to intervene.
また、本実施例では、露光光としてＡｒＦエキシマレーザを例に挙げて説明を行っているが、露光光はＡｒＦエキシマレーザに限られるものではなく、高圧水銀ランプ、ＫｒＦエキシマレーザ、Ｆ２エキシマレーザ等であっても良い。 In this embodiment, the ArF excimer laser is described as an example of the exposure light. However, the exposure light is not limited to the ArF excimer laser, but a high pressure mercury lamp, a KrF excimer laser, an F 2 excimer laser. Etc.
本発明を適用した露光装置では、ウエハステージとウエハ基板側面の間隙が局所的に狭くなっているために、水の表面張力の作用によりウエハ基板の裏面への水の回り込みを抑制することができ、ウエハ基板の周辺領域でのパターン転写精度の低下を抑制することができると共に、ウエハ基板の裏面やウエハステージのチャックピンの汚染を抑制することができ、製品歩留りの向上並びにメンテナンス頻度低減による生産性の向上が実現し、既存のインフラ技術を有効利用によって、利益率と生産効率の高い半導体デバイス製造プロセスの構築が可能となる。 In the exposure apparatus to which the present invention is applied, since the gap between the wafer stage and the side surface of the wafer substrate is locally narrow, it is possible to suppress the water from flowing into the back surface of the wafer substrate by the action of the surface tension of the water. In addition to suppressing degradation of pattern transfer accuracy in the peripheral area of the wafer substrate, it is possible to suppress contamination of the back surface of the wafer substrate and the chuck pins of the wafer stage, and production by improving product yield and reducing maintenance frequency. As a result, it is possible to construct a semiconductor device manufacturing process with a high profit margin and high production efficiency by effectively utilizing existing infrastructure technology.
１ 露光装置
２ ウエハステージ
３ 投影レンズ筺体
４ ウエハ基板支持体本体
５ 凸部
６ チャックピン
７ ナイフエッジ部
８ 上面
９ 下面
１０ ガス噴射機構
１１ 圧力制御手段
１３ 廃液ポンプ
２０ ウエハ基板
２１ 水
DESCRIPTION OF SYMBOLS 1 Exposure apparatus 2 Wafer stage 3 Projection lens housing 4 Wafer substrate support
Claims (6)
前記基板に光を照射する光源とを備えると共に、
前記光源は、同光源から照射される光の光路上に所定の液体が配置された状態で、前記基板に光を照射する様に構成された露光装置において、
前記凸部に、前記基板と対向する突起部が形成された
ことを特徴とする露光装置。 A support body having a support body supporting the substrate, and a convex portion surrounding the substrate;
A light source for irradiating the substrate with light;
In the exposure apparatus configured to irradiate the substrate with light in a state where a predetermined liquid is disposed on an optical path of light emitted from the light source,
An exposure apparatus characterized in that a protrusion facing the substrate is formed on the protrusion.
ことを特徴とする請求項１に記載の露光装置。 The exposure apparatus according to claim 1, wherein the protrusion is formed at substantially the same height as a region of the side surface of the substrate closest to the convex portion.
ことを特徴とする請求項１に記載の露光装置。 2. The exposure apparatus according to claim 1, wherein the convex portion is formed to have substantially the same height as a surface of the substrate that irradiates light from the light source.
ことを特徴とする請求項１に記載の露光装置。 The exposure apparatus according to claim 1, further comprising an atmospheric pressure control unit configured to control the atmospheric pressure on the back surface side of the substrate to be higher than the atmospheric pressure on the front surface side of the substrate.
ことを特徴とする請求項１に記載の露光装置。 The exposure apparatus according to claim 1, further comprising an airflow generation unit configured to generate an airflow that flows along a back surface of the substrate from a substantially central region to a peripheral region of the back surface of the substrate.
ことを特徴とする請求項１に記載の露光装置。 The exposure apparatus according to claim 1, further comprising: a discharge unit that discharges the liquid that has flowed into the back side of the substrate.
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