JP2005109519A - Semiconductor device, plate structure, and manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device free from connection members, such as support leads or adhesive tapes, which have been required to support bridges using the adhesive tapes, since the bridges which connect between semiconductor chips are formed in an island-shape, in a semiconductor device made as a single package, using conventional lead frames and mounting a plurality of semiconductor chips. <P>SOLUTION: Since die pads 50, 51, external connection electrodes 52, and bridges 53, etc, are coated with an insulating resin, after half etching has been carried out, single packaging is enabled, free from connection members, such as the support leads and adhesive tapes. Moreover, manufacturing free from adopting a support substrate, enables the semiconductor device to be thin in shape and superior in heat radiating properties. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device, a plate-shaped body, and a method for manufacturing the semiconductor device, and more particularly, a semiconductor device, a plate-shaped body, and a method for manufacturing the semiconductor device, in which a plurality of semiconductor chips are mounted in a planar or overlapping manner. It is about.

  In recent years, a plurality of chips are packaged in one package in order to increase the capacity of the memory and to expand the circuit function.

  For example, FIG. 12 shows a semiconductor device 3 in which two semiconductor chips 1 and 2 are two-dimensionally arranged and packaged in one package. The semiconductor device 3 includes a lead frame, and a large number of leads 6 are arranged around the first die pad 4 and the second die pad 5. A bridge 7 is disposed between the first die pad 4 and the second die pad 5. The first semiconductor chip 1 is fixed on the first die pad 4, the second semiconductor chip 2 is fixed on the second die pad 5, and the first bonding pads of the semiconductor chips 1 and 2 are fixed. A thin metal wire 10 is connected between 8 and the second bonding pad 9 on the lead 6. Further, a bridge 7 is used to electrically connect the first semiconductor chip 1 and the second semiconductor chip 2. That is, the bonding pad 8 and the bridge 7 of the first semiconductor chip 1, and the bridge 7 and the bonding pad 8 a of the second semiconductor chip 2 are connected via the thin metal wire 10. The whole is packaged in one package with the insulating resin 11.

  The fine metal wires 10 are connected by ball bonding on one side and stitch bonding on the other side. In this stitch bonding, since ultrasonic waves are applied for a long time to cause deterioration of the semiconductor chip, ball bonding is adopted on the semiconductor chip side, and stitch bonding is adopted on the bonding pad side on the lead 6.

However, when the first semiconductor chip 1 and the second semiconductor chip 2 are directly connected by the thin metal wires 10, one of the semiconductor chips is always connected by stitch bonding. Therefore, in this structure, by forming the bridge 7, both semiconductor chips are configured to be connected by ball bonding.
JP-A-11-40741

  However, in the lead frame of FIG. 12 described above, the leads 6 are connected with tie bars and are easy to handle. However, the bridge 7 is formed in an island shape, so it will fall as it is. Various ideas have been applied.

  Here, a connecting piece 12 for connecting the first die pad 4 and the second die pad 5 is provided, and the connecting piece 12 and the bridge are bonded together with an adhesive tape 13.

  However, since heat is applied at the time of molding, the adhesive tape 13 needs heat resistance, is expensive, and has a problem of increasing the cost as a semiconductor device.

  Further, as a method of supporting the bridge 7 without dropping, a method of forming a lead pattern including a bridge on a support substrate such as a flexible sheet, a ceramic substrate, or a printed substrate and molding the lead pattern is conceivable. However, if this support substrate is adopted, there is a problem that the semiconductor device becomes thick and the cost increases. Further, since the semiconductor chip molded on the support substrate is thermally insulated by the support substrate, there is a problem that the temperature of the semiconductor chip rises. In particular, when the temperature of the semiconductor chip rises, there is a problem that the drive current and the drive frequency are lowered, and the original capability of the semiconductor chip cannot be brought out.

The present invention has been made in view of the above-described problems. First, the first semiconductor chip and the second semiconductor chip that are electrically connected to each other, the first semiconductor chip, and the second semiconductor chip. Provided between the chips, surrounding the first semiconductor chip and the second semiconductor chip, and a bridge for electrically connecting the first semiconductor chip and the second semiconductor chip, and a mounting area for the first semiconductor chip and the second semiconductor chip. An external connection electrode in which at least a part of the back surface serves as a connection electrode to the outside, and the first semiconductor chip and the external connection electrode, and the second semiconductor chip and the external connection electrode are electrically connected. 1 thin metal wire, the first semiconductor chip and the bridge, the second thin metal wire electrically connecting the second semiconductor chip and the bridge, the first semiconductor chip, and the second semiconductor Chi , The external connection electrodes, in the semiconductor device in which an insulating resin that seals the first fine metallic wire and the second fine metallic wire,
The insulating resin exposes a back surface of the bridge and the external connection electrode, and the second metal fine wire is ball-bonded on the first semiconductor chip and the second semiconductor chip, and on the bridge The problem is solved by stitch bonding.

  As will be apparent from the manufacturing method described later, the bridge and external connection electrodes are supported by an insulating resin, which eliminates the need for conventional adhesive tape, and the back surface of the semiconductor chip is mounted directly on the mounting board. Therefore, the temperature rise of the semiconductor chip can be prevented.

  Second, by providing an insulating coating on the back surface of the insulating resin and the back surface of the bridge, it is possible to extend the wiring on the mounting substrate to the back surface of the bridge, and the wiring pattern on the mounting substrate side is simplified. Can be realized.

  Third, an insulating coating is provided on the back surface of the insulating resin, the back surface of the bridge, and the back surface of the external connection electrode, and a part of the external connection electrode is exposed to connect to the electrode on the mounting substrate side. It can be done or insulation is removed.

Fourth, a flat back surface over the entire surface corresponding to the resin sealing region, a sheet-like shape with a predetermined thickness from the back surface, and a region surrounded by a contact region with the upper mold, external connection electrodes and Prepare a plate-like body having a surface where the bridge is formed in a convex shape,
While mounting a semiconductor element in the semiconductor element mounting region, electrically connecting the external connection electrode and the semiconductor chip, a bridge and the semiconductor chip,
The plate-shaped body is mounted on a mold, and an insulating resin is filled in a space formed by the plate-shaped body and the upper mold,
And removing the plate-like body exposed on the back surface of the filled resin to separate the convex portions.

  Until mounting of semiconductor chips, electrical connection, and filling of insulating resin, the external connection electrode and the plate-like body used as a bridge are used as a support substrate, and the external connection electrode and bridge are separated by using a hardened insulating resin. By adopting it as a support substrate, a conventionally used support substrate such as a printed circuit board or a ceramic substrate becomes unnecessary. Bridges can also be formed without using adhesive tape.

  The present invention has a structure capable of half-etching a conductive pattern through a conductive film or a photoresist. Furthermore, the plate-like body can be configured as an external connection electrode of a semiconductor device or a conductive pattern of a bridge without being pulled out from the front to the back by pressing or etching, and stopped in the middle. With this structure that can employ half-etching, the interval between the conductive patterns can be narrowed, and a finer pattern becomes possible. In addition, since the die pad, the external connection electrode, and the bridge are integrally formed with the plate-like body, deformation and warpage can be suppressed, and tie bars and suspension leads can be eliminated. Furthermore, after the insulating resin is sealed and completely fixed, the conductive pattern can be separated by polishing or etching the back surface of the plate-like body, and the conductive pattern is arranged at a predetermined position without any displacement. be able to. In particular, the bridge is conventionally supported by using an adhesive tape, but according to the present invention, the bridge can be embedded in an insulating resin without using this support means.

  Further, since the insulating resin is formed on the half-etched sheet-like conductive foil, burrs generated between the leads can be eliminated.

  Further, when the plate-like body is made of Cu as the main material and the conductive film is made of Ni, Ag, Au, Pd, or the like, the conductive film can be used as an etching mask. Can be formed into a curved structure, or an eave by a conductive film can be formed on the surface of the conductive pattern, thereby providing a structure having an anchor effect. Accordingly, it is possible to prevent the conductive pattern located on the back surface of the insulating resin from coming off and warping.

  In addition, a semiconductor device manufactured using a plate-like body is composed of a semiconductor element, a conductive path such as a conductive pattern, and a minimum necessary amount of an insulating resin, and becomes a semiconductor device with no waste of resources. Therefore, a semiconductor device that can greatly reduce the cost can be realized. Further, by optimizing the coating thickness of the insulating resin and the thickness of the conductive foil, it is possible to realize a semiconductor device that is very small, thin, and lightweight.

  In addition, when the semiconductor element is directly fixed to the die pad via a conductive film such as brazing material, Au, Ag, etc., the back surface of the die pad is exposed, so that the heat generated from the semiconductor element is directly transferred to the mounting board via the die pad. Can tell. In particular, this heat dissipation enables the mounting of power elements.

  In addition, this semiconductor device has a structure in which the back surface of the separation groove and the back surface of the conductive pattern have substantially flat surfaces, and the semiconductor device itself can be mounted even if a narrow pitch QFP or the like is mounted on the mounting substrate. Since it can be moved horizontally as it is, it is very easy to correct the displacement of the external extraction electrode.

  Further, the whole is supported by the plate-like body until the insulating resin is applied, and the insulating resin serves as a support substrate for separation and dicing of the conductive pattern. Therefore, as described in the conventional example, there is no need for a support substrate, and there is an advantage that the cost can be reduced.

First Embodiment for explaining a Semiconductor Device FIG. 1A is a plan view of a semiconductor device according to the present invention, and FIGS. 1B to 1E are cross-sectional views corresponding to the line AA of FIG. 1A. 1B to 1E show four types of back surface structures of the semiconductor device.

  In the present invention, the first die pad 50 and the second die pad 51 are arranged on substantially the same plane, and an external connection electrode 52 is provided around the first die pad 50 and the second die pad 51. The external connection electrode 52 has a front surface serving as a bonding pad and a back surface connected to the outside. At least one bridge 53 is provided between the first die pad 50 and the second die pad 51.

  Further, a first semiconductor chip 54 is fixed on the first die pad 50, and a second semiconductor chip 55 is fixed to the second die pad 51 and is connected via a thin metal wire.

  The fine metal wires include a first fine metal wire 56 connected to the external connection electrode 52 and a second fine metal wire 57 connected to the bridge 53. A plurality of bonding pads are provided on the surface of the semiconductor chip. Based on the input / output signals of the bonding pads, at least a part of the bonding pads is selected, and the position and number of the external connection electrodes 52 are determined correspondingly. The bonding pad 58 on the selected semiconductor chip and the external connection electrode 52 are connected through the first fine metal wire 56.

  On the other hand, the connection between the first semiconductor chip 54 and the second semiconductor chip 55 is such that the bonding pad 59 of the first semiconductor chip 54 and one end of the bridge 53 are connected by the second thin metal wire 57 and the other end of the bridge 53 is connected. And the bonding pad 60 of the second semiconductor chip 55 are connected via the second thin metal wire 57.

  In this structure, since the bridge 53 is provided, all of the fine metal wires 56 and 57 connected on the first semiconductor chip 54 and second semiconductor chip 55 side can be connected by ball bonding.

  As is clear from the description of FIGS. 7 to 11, the external connection electrode 52 and the bridge 53 are supported by being molded with an insulating resin 61 before the conductive foil is half-etched and completely separated. The adhesive tape used is completely unnecessary.

  According to the present invention, the external connection electrode 52 and the bridge 53 are not supported by a connecting piece such as a support lead or a tab suspension lead, but are sealed with an insulating resin 61 independently. In addition, these independent external connection electrodes 52 and bridges 53 are sealed without adhesive tape. Therefore, the finished product does not have the cut portion of the connecting piece.

  A conventional lead frame is completed by cutting off connecting members such as suspension leads and tie bars. That is, it is processed as a finished product from the front surface of the lead to the side surface and back surface. Therefore, since it is a finished lead frame, a connecting member is required. And after mounting a semiconductor chip on this lead frame, it sealed with insulating resin and cut | disconnected this connection member. Therefore, the bridge 7 arranged in an island shape without being connected anywhere is only bonded and fixed by a support member such as the adhesive tape 13 as shown in FIG.

  However, in the present invention, on the lead frame manufacturing side, the conductive foil is half-etched, and the external connection electrode 52 and the bridge 53 are supplied to the semiconductor manufacturer in a semi-finished product state. Then, the semiconductor manufacturer performs device mounting, electrical connection, sealing with an insulating resin, and finally the external connection electrode 52 and the bridge 53 so that the shape of the external connection electrode 52 and the bridge 53 is separated over the entire area. The back side is processed. Therefore, it is possible to obtain a finished product without using a connecting member such as a tab suspension lead or an adhesive tape, and without mechanical separation of the connecting member.

  On the back surface of the insulating resin 61, a region indicated by a hatched portion in FIG. 1A is exposed. This is shown in FIG. 1B. When an electrode corresponding to the exposed region is formed on the mounting substrate side and the semiconductor device is fixed, heat generated from the semiconductor chips 54 and 55 is transferred to the electrode on the mounting substrate side through the die pads 50 and 51 having excellent heat conduction. Can dissipate heat. In the conventional semiconductor device, the entire region is packaged, or in the SMD, only the solder ball is a heat conducting member, heat dissipation is inferior, and the semiconductor chip characteristics cannot be maximized. The heat dissipation is extremely excellent, and the characteristics of the semiconductor chip can be exhibited more.

  FIG. 1C is a first modification of the above-described structure (FIG. 1B). In FIG. 1B, since the hatched portion is exposed, it is difficult to extend the wiring on the mounting substrate side to the back surface of the semiconductor device. In addition, when a brazing material is applied to the external connection electrode 52 and the die pads 50 and 51, the thickness of the brazing material is different due to the difference in area, and the semiconductor device tilts.

  The present invention solves the above problem by forming an insulating film 62 on the back surface of the semiconductor device as shown in FIG. 1C. The dotted line ◯ shown in FIG. 1A indicates the external connection electrode 52 and the die pads 50 and 51 exposed from the insulating film 62. That is, since the portions other than the circle are covered with the insulating film 62, the wiring provided on the mounting substrate can be extended to the back surface of the semiconductor device. Furthermore, since the size of the portion of ○ is substantially the same size, the thickness of the brazing material is substantially the same. This is the same even after solder printing and after reflow. The same applies to conductive pastes such as Ag, Au, Ag-Pd.

  Subsequently, a second modification is shown in FIG. 1D. The back surfaces of the die pads 50 and 51 and the external connection electrode 52 are formed so as to be recessed from the back surface of the insulating resin 61. By adjusting the depth of the recess 63, the amount of brazing material and conductive paste formed here can be controlled, and the adhesive strength can be adjusted. Further, since the protruding portion 64 made of the insulating resin 61 is provided, the brazing material or the conductive paste does not come into contact with the back surface of the semiconductor device. Note that, as in FIG. 1C, the insulating coating 62 may be coated to expose only the portions indicated by ◯.

  A third modification is shown in FIG. 1E. This is an example in which a convex portion 65 is provided opposite to FIG. 1D. By adjusting the height of the convex portion, even if dust is present on the mounting substrate side, there is an advantage that the semiconductor device can be connected well. For example, in the semiconductor devices of FIGS. 1B and 1C, if there is dust between the semiconductor device and the mounting substrate, it can be assumed that the brazing material does not fuse with each other, resulting in a solder failure. However, this problem is solved by providing the convex portion.

Second Embodiment Explaining Semiconductor Device FIG. 2A is a plan view of a semiconductor device according to the present invention, and FIGS. 2B to 2E are cross-sectional views corresponding to line AA in FIG. 2A. As in the first embodiment, the back surface structure of the semiconductor device is shown in FIGS. 2B to 2E.

  The present invention is characterized in that by adopting the semiconductor chips 54 and 55 for face-down, the external connection electrode 52 can be disposed directly under the semiconductor chip, and the planar area and thickness of the semiconductor device can be reduced.

  The first semiconductor chip 54 and the second semiconductor chip 55 can utilize face-down bare chips, flip chips, SMDs, wafer scale CSPs, and the like, and are externally connected to positions corresponding to the electrodes on the semiconductor chips 54 and 55. An electrode 52 is provided. Then, the external connection electrode 52 and the electrodes on the semiconductor chips 54 and 55 are connected through connection means. As this connection means, Au bump, brazing material, solder ball, conductive ball, anisotropic conductive resin, or the like can be used.

  The bridge 53 is formed integrally with the external connection electrodes 52 a and 52 b, and extends from the bonding pad 59 of the first semiconductor chip 54 to the bonding pad 60 of the second semiconductor chip 55.

The heat of this semiconductor device is only transmitted through the solder balls and is inferior in heat dissipation. However, it is possible to prevent the temperature rise of the semiconductor chip by exposing the back surfaces of the semiconductor chips 54 and 55 from the insulating resin 61 and by reducing the thickness of the insulating resin on the back surfaces of the semiconductor chips 54 and 55. Moreover, you may attach a radiation fin to the back surface side of a semiconductor chip.

Third Embodiment Explaining Semiconductor Device FIG. 3A is a plan view of a semiconductor device according to the present invention, and FIGS. 3B to 3E are cross-sectional views corresponding to line AA in FIG. 3A. Similarly to the two embodiments described above, the back surface structure of the semiconductor device is shown in four types in FIGS. 3B to 3E.

  In the present invention, a second semiconductor chip 55 is stacked on a first semiconductor chip 54. Here, two semiconductor chips are stacked, but more than this may be stacked. In addition, since they are connected via a fine metal wire, the upper semiconductor chip is formed smaller, and is laminated so that the bonding pads of the lower semiconductor chip are exposed around this.

  First, there is a die pad 50 around which an external connection electrode 52 is provided. The external connection electrode 52 has a front surface serving as a bonding pad and a back surface connected to the outside. The external connection electrode 52 includes a bridge 52 </ b> C that connects the first semiconductor chip 54 and the second semiconductor chip 55. The number of bridges 52C is formed in a desired number depending on the connection relationship.

  First, the first semiconductor chip 54 is fixed on the die pad 50. Here, the fixing means is selected depending on whether the first semiconductor chip 54 is fixed at a predetermined potential or becomes floating. That is, when fixed to a predetermined potential, it is fixed with solder or conductive paste, and when it is floating, it is fixed with an insulating adhesive. On the first semiconductor chip 54, the second semiconductor chip 55 is fixed with an insulating adhesive. The bonding pad 58A of the first semiconductor chip 54 and the external connection electrode 52A are connected to each other through a thin metal wire 56A, and the bonding pad 58B of the second semiconductor chip 55 and the external connection electrode 52B are connected to each other through a thin metal wire 56B.

  On the other hand, the connection between the first semiconductor chip 54 and the second semiconductor chip 55 is such that the bonding pad 59a of the first semiconductor chip 54 and the external connection electrode 52C are connected by a thin metal wire 60, and the external connection electrode 52C and the second semiconductor chip 54 are connected. Bonding pads 59 b of the semiconductor chip 55 are connected via the fine metal wires 60. The external connection electrode 52C may be formed larger in size than other external connection electrodes because at least two fine metal wires are connected to the external connection electrode 52C.

  Since this structure is provided with the external connection electrodes 52C, all the metal thin wires connected on the first semiconductor chip 54 and the second semiconductor chip 55 side can be connected by ball bonding.

  Further, since the external connection electrode 52 is supported by being half-etched with the conductive foil and molded with the insulating resin 61 before being completely separated, the conventional adhesive tape is completely unnecessary.

  In the present invention, the external connection electrode 52 is not supported by a connecting member such as a support lead or a tab suspension lead, but is sealed with an insulating resin 61 independently. In addition, these independent external connection electrodes 52 are sealed without an adhesive tape. Therefore, the finished product does not have a cut portion of the connecting member.

  Conventional lead frames are completed except for connecting pieces such as suspension leads and tie bars. That is, it is processed as a finished product from the front surface of the lead to the side surface and back surface. Therefore, since it is a finished lead frame, a connecting member is required. And after mounting a semiconductor chip on this lead frame, it sealed with insulating resin and cut | disconnected this connection member. For this reason, the only way to connect the bridges that are not connected anywhere but in an island shape is to be bonded and fixed with a support member such as an adhesive tape.

  However, in the present invention, on the lead frame manufacturing side, the external connection electrode 52 is supplied to the semiconductor manufacturer in a semi-finished product in which the conductive foil is half-etched. Then, the semiconductor manufacturer performs device mounting, electrical connection, and sealing with an insulating resin, and finally the back surface is processed so that the shape of the external connection electrode 52 is separated over the entire region. Therefore, it is possible to obtain a finished product without using a connecting member such as a tab suspension lead or an adhesive tape, and without mechanical separation of the connecting member.

  The die pad 50 and the external connection electrodes 52 in FIG. 3A are exposed on the back surface of the insulating resin 61. This is shown in FIG. 3B. When an electrode corresponding to this exposed region is formed on the mounting substrate side and the semiconductor device is fixed, heat generated from the semiconductor chip 54 can be radiated to the electrode on the mounting substrate side through the die pad 50 having excellent heat conduction. In the conventional semiconductor device, the entire region is packaged, or in the SMD, only the solder ball is a heat conducting member, heat dissipation is inferior, and the semiconductor chip characteristics cannot be maximized. The heat dissipation is extremely excellent, and the characteristics of the semiconductor chip can be exhibited more.

  FIG. 3C is a first modification of the above-described structure (FIG. 3B). In FIG. 3B, since the hatched portion is exposed, it is difficult to extend the wiring on the mounting substrate side to the back surface of the semiconductor device. Further, when a brazing material is applied to the external connection electrode 52 or the die pad 50, the thickness of the brazing material is different due to the difference in area, and an electrical connection failure can be assumed.

  The present invention is solved by forming an insulating film 62 on the back surface of the semiconductor device as shown in FIG. 3C. The dotted circles shown in FIG. 3A indicate the external connection electrodes 52 and the die pad 50 exposed from the insulating film 62. That is, since the portions other than the circle are covered with the insulating film 62, the wiring provided on the mounting substrate can be extended to the back surface of the semiconductor device. Furthermore, since the size of the portion of ○ is substantially the same size, the thickness of the brazing material is substantially the same. This is the same even after solder printing and after reflow. The same applies to conductive pastes such as Ag, Au, Ag-Pd.

  Subsequently, a second modification is shown in FIG. 3D. The back surfaces of the die pad 50 and the external connection electrode 52 are formed so as to be recessed from the back surface of the insulating resin 61. By adjusting the depth of the recess 63, the amount of brazing material and conductive paste formed here can be controlled, and the adhesive strength can be adjusted. Further, since the protruding portion 64 made of the insulating resin 61 is provided, the brazing material or the conductive paste does not come into contact with the back surface of the semiconductor device. Note that, as in FIG. 3C, the insulating resin 61 may be covered so that only the portions indicated by ◯ are exposed.

A third modification is shown in FIG. 3E. This is an example in which a convex portion 65 is provided opposite to FIG. 3D. By adjusting the height of the convex portion, there is an advantage that the semiconductor device can be satisfactorily connected even if dust is present on the mounting substrate side. For example, in the semiconductor devices of FIGS. 3B and 3C, if there is dust between the semiconductor device and the mounting substrate, it can be assumed that the brazing material does not fuse with each other and a solder failure occurs. However, this problem is solved by providing the convex portion. The same applies to FIG. 3D.

Fourth Embodiment Explaining Semiconductor Device FIG. 4 shows this embodiment. FIG. 4 is a combination of FIG. 1 and FIG. Semiconductor chips 70 and 71 are stacked on the first die pad 50 as in the structure of FIG. A third semiconductor chip 73 is fixed to the second die pad 51. The first semiconductor chip 70, the second semiconductor chip 71, or the third semiconductor chip are connected to each other via the external connection electrodes 52,.

Detailed description has been given in FIG. 1 and FIG.

Fifth Embodiment Explaining Semiconductor Device This embodiment is shown in FIG. FIG. 5 is a modification of FIG. 1, in which circuit elements are connected between the bridge 53A and the bridge 53B. Here, a chip capacitor C is connected as a circuit element.

Sixth Embodiment Explaining Semiconductor Device This embodiment is shown in FIG. FIG. 6 shows a modification of FIG. 3 in which a circuit element, for example, a chip capacitor C is connected between two external connection electrodes.

Seventh Embodiment Explaining Method for Manufacturing Semiconductor Device A conductive foil mainly made of Cu is employed and the process until the semiconductor device 80 is manufactured will be described with reference to FIGS.

  First, a plate-like body 81 made of a conductive foil is prepared as shown in FIG. In the plate-like body 81, the first surface 82 and the second surface 83 are flat, and a conductive film 84 or a photoresist having a conductive pattern formed on the second surface 83 is formed. The conductive pattern is a hatched portion as shown in FIG. When a photoresist is employed instead of the conductive film, the conductive film is formed at least in a portion corresponding to the bonding pad in the lower layer of the photoresist.

  Subsequently, the plate-like body 81 is half-etched through the conductive film 84 or the photoresist. The etching depth should be shallower than the thickness of the plate-like body 81. Note that the shallower the etching depth, the finer the pattern can be formed.

Then, by half-etching, the conductive pattern appears in a convex shape on the second surface 83 of the plate-like body 81. The plate-like body 81 may be a Cu—Al laminate or an Al—Cu—Al laminate. In particular, an Al—Cu—Al laminate can prevent warping caused by a difference in thermal expansion coefficient. (See Figure 8 above)
Subsequently, the semiconductor element 85 is fixed to the semiconductor element mounting region, and the bonding electrode of the semiconductor element 85 and the first pad 86 are electrically connected. In the drawing, since the semiconductor element 85 is mounted face-up, a thin metal wire 87 is employed as the connecting means.

  In this bonding, since the first pad 86 is integral with the plate-like body 81 and the back surface of the plate-like body 81 is flat, it comes into contact with the table of the bonding machine. Therefore, if the plate-like body 81 is completely fixed to the bonding table, the bonding energy can be efficiently transmitted to the fine metal wire 87 and the first pad 86 without the positional displacement of the first pad 86. Therefore, it is possible to improve the connection strength of the fine metal wires for connection. The bonding table can be fixed, for example, by providing a plurality of vacuum suction holes on the entire surface of the table.

  In addition, when adopting a face-down type semiconductor element, the electrodes on the semiconductor element 85 are formed with solder balls, bumps such as Au and solder, and the first pad 86 is arranged directly below the bumps. It is fixed. See FIG. 2 for details.

Further, the passive element may be fixed to the pad 86 via a brazing material such as solder, a conductive paste such as Ag paste, or the like. Note that passive elements that can be employed here include a chip resistor, a chip capacitor, a printing resistor, and a coil. (See Figure 9 above)
An insulating resin 89 is formed so as to cover the conductive pattern, the semiconductor element 85, and the connecting means. The insulating resin may be either thermoplastic or thermosetting.

  Further, it can be realized by transfer molding, injection molding, dipping or coating. As the resin material, a thermosetting resin such as an epoxy resin can be realized by transfer molding, and a thermoplastic resin such as a liquid crystal polymer and polyphenylene sulfide can be realized by injection molding.

  In the present embodiment, the thickness of the insulating resin is adjusted so that about 100 μm is covered from the top of the thin metal wire 87. This thickness can be increased or decreased in consideration of the strength of the semiconductor device.

In the injection, since the conductive pattern is integrated with the sheet-like plate-like body 81, there is no displacement of the conductive pattern as long as the plate-like body 81 is not displaced.
Again, the lower mold and the back surface of the plate-like body 81 can be fixed by vacuum suction.

As described above, the insulating resin 89 is embedded with conductive patterns and semiconductor elements formed as convex portions, and the plate-like body 81 below the convex portions is exposed on the back surface. (See Figure 10 above)
Subsequently, the plate-like body 81 exposed on the back surface of the insulating resin 89 is removed, and the conductive patterns are individually separated.

  Various methods can be considered for the separation step here, and the back surface may be removed by etching, or may be cut by polishing or grinding. Moreover, you may employ | adopt both. For example, if the insulating resin 89 is etched until it is exposed, there is a problem that the scraped scraps of the plate-like body 81 and the burr-like metal thinned outwardly bite into the insulating resin 89. Therefore, if the cutting is stopped just before the insulating resin 89 is exposed, and then the conductive pattern is separated by etching, the metal of the plate-like body 81 bites into the insulating resin located between the conductive patterns. It can be formed without. Thereby, the short circuit of the conductive patterns of a fine space | interval can be prevented.

  When a plurality of units constituting the semiconductor device 80 are formed, there is a step of dicing the individual semiconductor devices 80 after this separation step.

Here, a dicing apparatus is employed to separate the components individually, but chocolate breaks, presses and cuts are also possible. (See Figure 11 above)
With the above manufacturing method, a light, thin and small package can be realized with three elements of a plurality of conductive patterns, a semiconductor element 85 and an insulating resin 89.

  Next, effects produced by the above manufacturing method will be described.

  First, since the conductive pattern is half-etched and supported integrally with the plate-like body, the substrate conventionally used as the support substrate can be eliminated.

  Secondly, since the plate-like body is formed with a conductive pattern that is half-etched to form a convex portion, the conductive pattern can be miniaturized. Therefore, the conductive pattern width and the conductive pattern interval can be narrowed, and a package having a smaller planar size can be formed.

  Thirdly, since it is composed of the above three elements, it can be configured with the minimum necessary amount, can eliminate wasteful materials as much as possible, and can realize a thin semiconductor device with greatly reduced cost.

  Fourth, the die pad, the external connection electrode, the bridge, and the wiring are formed as convex portions by half-etching, and the individual separation is performed after sealing, so that tie bars and suspension leads are not necessary. Therefore, the formation of tie bars (suspending leads) and the cutting of tie bars (suspending leads) are completely unnecessary in the present invention. Furthermore, the bridge can be formed without the support of the adhesive tape.

  Fifth, after the conductive pattern that became the convex portion is embedded in the insulating resin, the plate-like body is removed from the back surface of the insulating resin and the leads are separated. Resin burrs generated between the leads can be eliminated.

Sixth, since the back surface of the semiconductor element is exposed from the back surface of the insulating resin, heat generated from the semiconductor device can be efficiently released from the back surface of the semiconductor device.

It is a figure explaining the 1st semiconductor device of the present invention. It is a figure explaining the 2nd semiconductor device of this invention. It is a figure explaining the 3rd semiconductor device of the present invention. It is a figure explaining the 4th semiconductor device of this invention. It is a figure explaining the 5th semiconductor device of this invention. It is a figure explaining the 6th semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the manufacturing method of the semiconductor device of this invention. It is a figure explaining the semiconductor device using the conventional lead frame.

Explanation of symbols

50 First die pad
51 Second die pad
52 External connection electrode
53 Bridge
54 First semiconductor chip
55 Second semiconductor chip
56 Thin metal wire
57 Fine metal wire
58, 59, 60 Bonding pads
61 Insulating resin
62 Insulation coating

Claims (21)

A first semiconductor chip and a second semiconductor chip that are electrically connected to each other and arranged face down;
A bridge for electrically connecting the first semiconductor chip and the second semiconductor chip;
An external connection electrode provided below the electrodes of the first semiconductor chip and the second semiconductor chip, wherein at least a part of the back surface serves as a connection electrode to the outside;
An insulating resin that seals the first semiconductor chip, the second semiconductor chip, the bridge, and the external connection electrode;
The semiconductor device, wherein the bridge and the back surface of the external connection electrode are exposed from the insulating resin. An insulating coating is provided on the back surface of the insulating resin, the back surface of the bridge, and the back surface of the external connection electrode,
The semiconductor device according to claim 1, wherein at least a part of the external connection electrode is exposed from the insulating film.   2. The semiconductor device according to claim 1, wherein the back surfaces of the bridge and the external connection electrode are exposed to be recessed from the insulating resin.   2. The semiconductor device according to claim 1, wherein the bridge is disposed between the first semiconductor chip and the second semiconductor chip. A conductive pattern; a circuit element electrically connected to the conductive pattern; an insulating resin that exposes a back surface of the conductive pattern to cover the conductive pattern and the circuit element; and a surface on which the conductive pattern is exposed. Comprising an insulating film covering the insulating resin;
A semiconductor device, wherein a back surface of the conductive pattern is exposed from an opening of substantially the same size provided in the insulating film.   6. The semiconductor device according to claim 5, wherein a brazing material is attached to the back surface of the conductive pattern exposed from the opening. A first semiconductor chip and a second semiconductor chip that are electrically connected to each other and arranged face down;
A bridge for electrically connecting the first semiconductor chip and the second semiconductor chip;
An external connection electrode electrically connected to the first semiconductor chip or the second semiconductor chip, wherein at least a part of the back surface serves as a connection electrode to the outside;
An insulating resin that exposes the back surfaces of the bridge and the external connection electrode to seal the first semiconductor chip, the second semiconductor chip, the bridge, and the external connection electrode;
Comprising an insulating film covering the insulating resin on the surface where the bridge and the external connection electrode are exposed;
A semiconductor device, wherein a back surface of the external connection electrode is exposed from an opening of substantially the same size provided in the insulating film.   The semiconductor device according to claim 7, wherein a brazing material is attached to the back surface of the external electrode exposed from the opening.   8. The semiconductor device according to claim 7, wherein the back surfaces of the bridge and the external connection electrode are exposed from the opening. A plate-like body having a first surface made of a flat surface and a second surface made of a flat surface so as to face the first surface;
The second surface is coated with an etching mask;
The said etching mask covers the area | region corresponding to the bridge | bridging and external connection electrode which connect the semiconductor element to be mounted. A plate-like body having a first surface composed of a flat surface and a second surface facing the first surface;
On the second surface, a convex portion protruding in the thickness direction is formed,
The convex part constitutes a bridge and an external connection electrode for electrically connecting semiconductor elements to be placed.   The plate-like body according to claim 10 or 11, wherein the bridge is disposed between the first semiconductor element and the second semiconductor element to be placed.   The plate-like body according to claim 10, wherein a plurality of units each including a plurality of the etching masks are provided on the second surface.   The plate-shaped body according to claim 11, wherein a plurality of units each including the plurality of convex portions as a unit are provided on the second surface.   The plate-like body according to claim 11, wherein a side surface of the convex portion is a curved surface. Preparing a plate-like body in which a surface of a region corresponding to a conductive pattern including a bridge for electrically connecting a plurality of semiconductor chips and an external connection electrode is covered with an etching mask;
Forming a separation groove on the surface of the plate-like body by performing etching through an etching mask, and forming the conductive pattern in a convex shape;
Electrically connecting the first semiconductor element and the second semiconductor element via the bridge by electrically connecting the first semiconductor element and the second semiconductor element to the conductive pattern; ,
Forming an insulating resin so that the semiconductor element is covered and filled in the separation groove;
Removing the plate-like body from the back surface until the insulating resin filled in the separation groove is exposed, and separating the conductive pattern. A step of preparing a plate-like body in which a conductive pattern including a bridge and external connection electrodes that electrically connect a plurality of semiconductor chips is formed in a convex shape by forming a separation groove;
Electrically connecting the first semiconductor element and the second semiconductor element via the bridge by electrically connecting the first semiconductor element and the second semiconductor element to the conductive pattern; ,
Forming an insulating resin so that the semiconductor element is covered and filled in the separation groove;
Removing the plate-like body from the back surface until the insulating resin filled in the separation groove is exposed, and separating the conductive pattern.   18. The method of manufacturing a semiconductor device according to claim 16, wherein the insulating resin on the surface where the conductive pattern is exposed is covered with an insulating film.   19. The method of manufacturing a semiconductor device according to claim 18, wherein at least a back surface of the external connection electrode is exposed from the insulating film. A plurality of units each including a plurality of the etching masks are provided on the surface of the plate-like body,
17. The method of manufacturing a semiconductor device according to claim 16, wherein after separating the conductive patterns, the individual units are separated by cutting the insulating resin between the units. A plurality of units each having the plurality of convex portions as one unit are provided on the surface of the plate-like body,
18. The method of manufacturing a semiconductor device according to claim 17, wherein after separating the conductive patterns, the individual units are separated by cutting the insulating resin between the units.

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