JP2005108825A - 発光装置およびその作製方法 - Google Patents
発光装置およびその作製方法 Download PDFInfo
- Publication number
- JP2005108825A JP2005108825A JP2004256503A JP2004256503A JP2005108825A JP 2005108825 A JP2005108825 A JP 2005108825A JP 2004256503 A JP2004256503 A JP 2004256503A JP 2004256503 A JP2004256503 A JP 2004256503A JP 2005108825 A JP2005108825 A JP 2005108825A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- anode
- emitting device
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 84
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 82
- 239000011229 interlayer Substances 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 54
- 239000010408 film Substances 0.000 claims description 410
- 239000010410 layer Substances 0.000 claims description 145
- 239000000758 substrate Substances 0.000 claims description 90
- 239000004065 semiconductor Substances 0.000 claims description 55
- 238000000576 coating method Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 49
- 150000002894 organic compounds Chemical class 0.000 claims description 48
- 238000005192 partition Methods 0.000 claims description 44
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 239000011241 protective layer Substances 0.000 claims description 18
- 125000000217 alkyl group Chemical group 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 230000002093 peripheral effect Effects 0.000 claims description 12
- 239000003566 sealing material Substances 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 abstract description 13
- 238000000605 extraction Methods 0.000 abstract description 10
- 239000012528 membrane Substances 0.000 abstract description 2
- 230000002195 synergetic effect Effects 0.000 abstract description 2
- 238000000638 solvent extraction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- 239000007789 gas Substances 0.000 description 25
- 239000011248 coating agent Substances 0.000 description 22
- 239000012535 impurity Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- 239000000945 filler Substances 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 238000007740 vapor deposition Methods 0.000 description 16
- 238000002834 transmittance Methods 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229910052760 oxygen Inorganic materials 0.000 description 12
- 229910052718 tin Inorganic materials 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 239000000565 sealant Substances 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 230000020169 heat generation Effects 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 7
- 229910052739 hydrogen Inorganic materials 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229920001721 polyimide Polymers 0.000 description 6
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 238000002425 crystallisation Methods 0.000 description 5
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- 229910004261 CaF 2 Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004952 Polyamide Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 150000001408 amides Chemical class 0.000 description 3
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000010549 co-Evaporation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000002966 varnish Substances 0.000 description 3
- 229910018125 Al-Si Inorganic materials 0.000 description 2
- 229910017073 AlLi Inorganic materials 0.000 description 2
- 229910018520 Al—Si Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- -1 MgAg Inorganic materials 0.000 description 2
- 229910017911 MgIn Inorganic materials 0.000 description 2
- 229910019794 NbN Inorganic materials 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 229910008812 WSi Inorganic materials 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- 229910016036 BaF 2 Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000005376 alkyl siloxane group Chemical group 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004256503A JP2005108825A (ja) | 2003-09-12 | 2004-09-03 | 発光装置およびその作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003322223 | 2003-09-12 | ||
| JP2004256503A JP2005108825A (ja) | 2003-09-12 | 2004-09-03 | 発光装置およびその作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011086323A Division JP5412460B2 (ja) | 2003-09-12 | 2011-04-08 | 発光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005108825A true JP2005108825A (ja) | 2005-04-21 |
| JP2005108825A5 JP2005108825A5 (enExample) | 2007-10-18 |
Family
ID=34554422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004256503A Withdrawn JP2005108825A (ja) | 2003-09-12 | 2004-09-03 | 発光装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005108825A (enExample) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007172873A (ja) * | 2005-12-19 | 2007-07-05 | Kyocera Corp | 画像表示装置およびその製造方法 |
| WO2008035556A1 (en) * | 2006-09-19 | 2008-03-27 | Sharp Kabushiki Kaisha | Organic electroluminescent display and method for manufacturing the same |
| JP2012216495A (ja) * | 2011-03-30 | 2012-11-08 | Sony Corp | 有機発光素子およびこれを備えた表示装置 |
| JP2012227122A (ja) * | 2011-04-04 | 2012-11-15 | Rohm Co Ltd | 有機ｅｌ装置 |
| JP2013084578A (ja) * | 2011-09-30 | 2013-05-09 | Canon Inc | 有機発光装置の製造方法 |
| KR101335422B1 (ko) * | 2006-12-29 | 2013-11-29 | 엘지디스플레이 주식회사 | 유기전계발광소자의 제조방법 |
| US8618536B2 (en) | 2010-06-29 | 2013-12-31 | Panasonic Corporation | Organic light-emitting element, display panel, display device, and manufacturing method for organic light-emitting element |
| KR20150052242A (ko) * | 2012-09-04 | 2015-05-13 | 메르크 파텐트 게엠베하 | 유기 전자 디바이스에서 유전 구조물들의 표면 개질 방법 |
| JP2017063178A (ja) * | 2015-09-25 | 2017-03-30 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | シリカ膜の製造方法、シリカ膜および電子素子 |
| CN111989985A (zh) * | 2018-04-26 | 2020-11-24 | 堺显示器制品株式会社 | 有机el装置及其制造方法 |
| CN114489254A (zh) * | 2013-07-02 | 2022-05-13 | 株式会社半导体能源研究所 | 数据处理装置 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0896963A (ja) * | 1994-09-28 | 1996-04-12 | Tdk Corp | 有機エレクトロルミネセンス素子 |
| JPH08330072A (ja) * | 1995-06-06 | 1996-12-13 | Fuji Electric Co Ltd | 有機薄膜発光素子およびその製造方法 |
| JP2001176674A (ja) * | 1999-12-14 | 2001-06-29 | Tdk Corp | 有機ｅｌ素子 |
| JP2001313338A (ja) * | 2000-02-22 | 2001-11-09 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP2002222691A (ja) * | 2000-07-24 | 2002-08-09 | Tdk Corp | 発光素子 |
| JP2002305076A (ja) * | 2001-02-01 | 2002-10-18 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| JP2002313582A (ja) * | 2001-04-17 | 2002-10-25 | Matsushita Electric Ind Co Ltd | 発光素子及び表示装置 |
| JP2003229280A (ja) * | 2002-02-04 | 2003-08-15 | Toshiba Corp | 有機ｅｌ表示素子および自己発光表示装置 |
| JP2003248469A (ja) * | 2001-11-29 | 2003-09-05 | Semiconductor Energy Lab Co Ltd | 表示装置及びこれを用いた表示システム |
| JP2003257622A (ja) * | 2002-02-28 | 2003-09-12 | Fuji Electric Co Ltd | 有機ｅｌディスプレイとその製造方法 |
-
2004
- 2004-09-03 JP JP2004256503A patent/JP2005108825A/ja not_active Withdrawn
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0896963A (ja) * | 1994-09-28 | 1996-04-12 | Tdk Corp | 有機エレクトロルミネセンス素子 |
| JPH08330072A (ja) * | 1995-06-06 | 1996-12-13 | Fuji Electric Co Ltd | 有機薄膜発光素子およびその製造方法 |
| JP2001176674A (ja) * | 1999-12-14 | 2001-06-29 | Tdk Corp | 有機ｅｌ素子 |
| JP2001313338A (ja) * | 2000-02-22 | 2001-11-09 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| JP2002222691A (ja) * | 2000-07-24 | 2002-08-09 | Tdk Corp | 発光素子 |
| JP2002305076A (ja) * | 2001-02-01 | 2002-10-18 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
| JP2002313582A (ja) * | 2001-04-17 | 2002-10-25 | Matsushita Electric Ind Co Ltd | 発光素子及び表示装置 |
| JP2003248469A (ja) * | 2001-11-29 | 2003-09-05 | Semiconductor Energy Lab Co Ltd | 表示装置及びこれを用いた表示システム |
| JP2003229280A (ja) * | 2002-02-04 | 2003-08-15 | Toshiba Corp | 有機ｅｌ表示素子および自己発光表示装置 |
| JP2003257622A (ja) * | 2002-02-28 | 2003-09-12 | Fuji Electric Co Ltd | 有機ｅｌディスプレイとその製造方法 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007172873A (ja) * | 2005-12-19 | 2007-07-05 | Kyocera Corp | 画像表示装置およびその製造方法 |
| WO2008035556A1 (en) * | 2006-09-19 | 2008-03-27 | Sharp Kabushiki Kaisha | Organic electroluminescent display and method for manufacturing the same |
| KR101335422B1 (ko) * | 2006-12-29 | 2013-11-29 | 엘지디스플레이 주식회사 | 유기전계발광소자의 제조방법 |
| US8618536B2 (en) | 2010-06-29 | 2013-12-31 | Panasonic Corporation | Organic light-emitting element, display panel, display device, and manufacturing method for organic light-emitting element |
| JP2012216495A (ja) * | 2011-03-30 | 2012-11-08 | Sony Corp | 有機発光素子およびこれを備えた表示装置 |
| JP2012227122A (ja) * | 2011-04-04 | 2012-11-15 | Rohm Co Ltd | 有機ｅｌ装置 |
| JP2013084578A (ja) * | 2011-09-30 | 2013-05-09 | Canon Inc | 有機発光装置の製造方法 |
| KR20150052242A (ko) * | 2012-09-04 | 2015-05-13 | 메르크 파텐트 게엠베하 | 유기 전자 디바이스에서 유전 구조물들의 표면 개질 방법 |
| JP2015528642A (ja) * | 2012-09-04 | 2015-09-28 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ Ｇｅｓｅｌｌｓｃｈａｆｔ ｍｉｔ ｂｅｓｃｈｒａｅｎｋｔｅｒ Ｈａｆｔｕｎｇ | 有機電子デバイスにおける誘電体構造の表面改変方法 |
| KR102239934B1 (ko) * | 2012-09-04 | 2021-04-13 | 메르크 파텐트 게엠베하 | 유기 전자 디바이스에서 유전 구조물들의 표면 개질 방법 |
| CN114489254A (zh) * | 2013-07-02 | 2022-05-13 | 株式会社半导体能源研究所 | 数据处理装置 |
| US12067204B2 (en) | 2013-07-02 | 2024-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device |
| US12429989B2 (en) | 2013-07-02 | 2025-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device |
| JP2017063178A (ja) * | 2015-09-25 | 2017-03-30 | 三星エスディアイ株式会社Samsung SDI Co., Ltd. | シリカ膜の製造方法、シリカ膜および電子素子 |
| CN111989985A (zh) * | 2018-04-26 | 2020-11-24 | 堺显示器制品株式会社 | 有机el装置及其制造方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5412460B2 (ja) | 発光装置 | |
| JP4823478B2 (ja) | 発光装置の作製方法 | |
| JP4741177B2 (ja) | 表示装置の作製方法 | |
| CN101673758B (zh) | 显示器件及其制造方法 | |
| JP4373086B2 (ja) | 発光装置 | |
| TWI263339B (en) | Light emitting device and method for manufacturing the same | |
| US7718463B2 (en) | Display device and manufacturing method thereof | |
| JP5712245B2 (ja) | 発光装置 | |
| CN1825616B (zh) | 显示装置、电子设备及该显示装置的制造方法 | |
| CN1770937B (zh) | 半导体器件以及显示器件 | |
| JP2003288994A (ja) | 発光装置およびその作製方法 | |
| JP4704006B2 (ja) | 表示装置及びその作製方法、並びに電子機器 | |
| JP4754795B2 (ja) | 表示装置及び表示装置の作製方法 | |
| JP2005108825A (ja) | 発光装置およびその作製方法 | |
| JP4785339B2 (ja) | 表示装置の作製方法 | |
| JP4583797B2 (ja) | 半導体装置の作製方法 | |
| JP4963156B2 (ja) | 半導体装置の作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070903 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070903 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100817 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101015 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110301 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110408 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20110415 |