JP2005105400A - 成膜装置、成膜方法、光学素子、及び光学系 - Google Patents

成膜装置、成膜方法、光学素子、及び光学系 Download PDF

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Publication number
JP2005105400A
JP2005105400A JP2003344387A JP2003344387A JP2005105400A JP 2005105400 A JP2005105400 A JP 2005105400A JP 2003344387 A JP2003344387 A JP 2003344387A JP 2003344387 A JP2003344387 A JP 2003344387A JP 2005105400 A JP2005105400 A JP 2005105400A
Authority
JP
Japan
Prior art keywords
target
plasma
film forming
film
optical element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003344387A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005105400A5 (enExample
Inventor
Koji Teranishi
康治 寺西
Yasuyuki Suzuki
康之 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003344387A priority Critical patent/JP2005105400A/ja
Priority to US10/953,931 priority patent/US20050072669A1/en
Publication of JP2005105400A publication Critical patent/JP2005105400A/ja
Publication of JP2005105400A5 publication Critical patent/JP2005105400A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0068—Reactive sputtering characterised by means for confinement of gases or sputtered material, e.g. screens, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Physical Vapour Deposition (AREA)
JP2003344387A 2003-10-02 2003-10-02 成膜装置、成膜方法、光学素子、及び光学系 Pending JP2005105400A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003344387A JP2005105400A (ja) 2003-10-02 2003-10-02 成膜装置、成膜方法、光学素子、及び光学系
US10/953,931 US20050072669A1 (en) 2003-10-02 2004-09-29 Deposition apparatus, deposition method, optical element, and optical system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003344387A JP2005105400A (ja) 2003-10-02 2003-10-02 成膜装置、成膜方法、光学素子、及び光学系

Publications (2)

Publication Number Publication Date
JP2005105400A true JP2005105400A (ja) 2005-04-21
JP2005105400A5 JP2005105400A5 (enExample) 2006-11-16

Family

ID=34386309

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003344387A Pending JP2005105400A (ja) 2003-10-02 2003-10-02 成膜装置、成膜方法、光学素子、及び光学系

Country Status (2)

Country Link
US (1) US20050072669A1 (enExample)
JP (1) JP2005105400A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011118043A (ja) * 2009-12-01 2011-06-16 Canon Inc 光学素子の製造方法
JP2019007041A (ja) * 2017-06-22 2019-01-17 キヤノン株式会社 フッ化膜を有する光学素子の製造方法およびフッ化膜の製造方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102245798A (zh) * 2008-12-15 2011-11-16 株式会社爱发科 溅镀装置及溅镀方法
CN113846304B (zh) * 2021-11-26 2022-02-11 北京航空航天大学 靶头、磁控溅射靶枪及磁控溅射系统

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5334302A (en) * 1991-11-15 1994-08-02 Tokyo Electron Limited Magnetron sputtering apparatus and sputtering gun for use in the same
US5736019A (en) * 1996-03-07 1998-04-07 Bernick; Mark A. Sputtering cathode
US6200431B1 (en) * 1997-02-19 2001-03-13 Canon Kabushiki Kaisha Reactive sputtering apparatus and process for forming thin film using same
US6179973B1 (en) * 1999-01-05 2001-01-30 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6296747B1 (en) * 2000-06-22 2001-10-02 Applied Materials, Inc. Baffled perforated shield in a plasma sputtering reactor
US20040000478A1 (en) * 2002-06-26 2004-01-01 Guenzer Charles S. Rotating hollow cathode magnetron

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011118043A (ja) * 2009-12-01 2011-06-16 Canon Inc 光学素子の製造方法
JP2019007041A (ja) * 2017-06-22 2019-01-17 キヤノン株式会社 フッ化膜を有する光学素子の製造方法およびフッ化膜の製造方法

Also Published As

Publication number Publication date
US20050072669A1 (en) 2005-04-07

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