JP2005068494A - Thin film treatment system, thin film treatment method, thin film transistor, and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin film treatment system by which metal thin film wiring composed of copper or an alloy essentially consisting of copper is formed on a substrate with high selectivity, to provide a thin film treatment method, to provide a thin film transistor, and to provide a display device. <P>SOLUTION: In the thin film treatment system, a metal film is deposited on the substrate to be treated having divided regions consisting of the surfaces to be treated plurally divided by the unit of the regions to be treated by a plating method, at least one treatment tank having an opening part with a size for treating at least one divided region among the divided regions and holding a chemical for plating treatment is provided. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a thin film processing apparatus and thin film processing method for forming, for example, copper or copper alloy wiring on a substrate with good selectivity, and a thin film transistor and a display device manufactured using the thin film processing apparatus.

  In recent years, in the semiconductor field represented by LSI and ULSI, with the progress of miniaturization and improvement in operation speed due to the improvement of integration, lower resistance wiring materials are used to solve problems such as signal delay. Is required. Also in the field of flat panel display devices such as liquid crystal display devices (LCDs), the increase in wiring length due to larger screens, miniaturization due to higher definition, peripheral circuits due to multifunctionalization, and monolithic addition of additional functions Thus, a lower resistance wiring material has been demanded.

  Conventionally, aluminum or an aluminum-based alloy is often used as a low-resistance wiring material. This is because aluminum has a resistivity of about 5 μΩcm and is easily finely processed.

  However, along with the miniaturization of wiring (reduction of line width), aluminum has a problem that wiring is easily short-circuited by electromigration at high temperatures and wiring is easily broken by stress migration under high stress. In addition, due to recent improvements in device characteristics and display performance, problems such as signal delay due to the resistance of the wiring material have become difficult to solve with the resistance value of aluminum.

  For this reason, copper or a copper alloy has attracted attention as a low-resistance wiring material replacing aluminum. This is because copper has a resistivity of about 2 μΩcm, which is less than half that of aluminum, and a wiring resistance lower than that of aluminum can be realized with the same film thickness. Moreover, since copper is superior in migration resistance compared to aluminum, this point is also attracting attention as a low-resistance wiring material replacing aluminum.

  As a method for forming a copper thin film for forming wiring, methods such as a PVD (Physical Vapor Deposition) method and a CVD (Chemical Vapor Deposition) method are used in addition to a plating method that has been used for a long time. In particular, in the field of semiconductor device (LSI) manufacturing, a technique for forming a copper thin film by combining a seed layer formation by a PVD method and an electrolytic plating method using this seed layer is widely used.

  However, when the method for forming a copper thin film used for manufacturing a semiconductor device is applied to the manufacture of a display device represented by a liquid crystal display device, the following various problems occur.

  First, there is a difference in substrate dimensions used for manufacturing as a major problem. The substrate used for manufacturing a semiconductor device such as an LSI is currently the largest silicon substrate having a diameter of 300 mm (about 12 inches), whereas the substrate size used for manufacturing the display device is, for example, 1500 mm × A large square substrate such as 1200 mm is used. In order to form a copper thin film on such a large substrate, it is inevitable to increase the size of the film forming apparatus.

  Secondly, as the film forming apparatus becomes larger, the amount of film forming material used and the amount of chemicals used in the plating bath increase, and the floor occupied area (footprint) of the apparatus increases. Since this increases, the cost increases when viewed from the total process.

  Third, when the electrolytic plating method used in LSI or the like is to be applied to a large substrate of a display device, the periphery of the substrate is used to flow current to the conductive material of the wiring portion arranged on the substrate. Although it is necessary to feed power from the portion, the resistance component of the conductive path increases and the voltage drop increases as the distance increases from the feed point toward the center of the substrate. As a result, the amount of current supplied to the plating process is reduced at a portion far from the feeding point as compared to the portion near the feeding point, and the amount of plating adhesion varies.

  FIG. 16 is a schematic perspective view showing a conventional electrolytic plating apparatus, and FIG. 17 is a schematic plan view showing a positional relationship between a feeding point and a substrate to be processed. As shown in FIG. 16, in the conventional electrolytic plating process for a large substrate, a plating solution 181 is placed in a plating tank 180, and the substrate 5 and the counter electrode 183 are immersed in the solution 181, respectively. 5 and the counter electrode 183 are connected to a DC power source 184 and energized.

  The plating tank 180 needs to be large with a margin at least than the substrate size in order to load the large substrate 5 to be processed. For this reason, the processing tank 180 is increased in size, and the plating solution 181 introduced into the processing tank 180 is large in amount because it requires the depth to which the substrate 5 to be processed is immersed. As a result, the consumption of the plating treatment solution 181 increases.

  In addition, as shown in FIG. 17, in the conventional electrolytic plating method, a single feeding point 185 is connected to the center of one side of the peripheral edge of the substrate that is not immersed in the plating treatment solution. The distances to the upper film formation regions 5a to 5f are different. For this reason, compared with the region 5d in the vicinity of the feeding point, the voltage decreases in the region 5b and the region 5a far from the feeding point, resulting in a large variation in the film thickness of the thin film between the regions 5a to 5f. The unevenness of the film thickness due to this voltage drop becomes more prominent as the substrate size increases, and this becomes an impediment factor when the plating process is applied to a large substrate.

  Fourth, when the electroless plating method is to be applied to a large substrate of a display device, the chemical solution is likely to stay in the processing tank and easily deteriorate with the increase in the size of the processing tank. Although necessary, there is a problem that it is difficult to quickly replace the chemical solution in the treatment tank and the amount of waste liquid increases.

  The present invention has been made to solve the above-described problem, and even when the substrate to be processed becomes a large substrate, a plating film can be uniformly formed in a desired region, and the plating solution can be resource-saving. It is an object to provide a thin film processing apparatus, a thin film processing method, a thin film transistor, and a display device.

  A thin film processing apparatus according to the present invention is a thin film processing apparatus for forming a metal film by a plating method on a substrate to be processed having a divided region consisting of a surface to be processed divided into a plurality of regions to be processed. In addition, at least one processing tank is provided which has an opening having a size for processing at least one of the divided areas, and holds a chemical for plating.

  A thin film processing method according to the present invention is a thin film forming method for forming a metal thin film on a substrate to be processed having a plurality of divided processing regions divided into a plurality of regions in units of processing regions, and at least the divided processing regions The processing tank having an opening portion covering one of the substrate is moved relative to the at least one divided processing region in the substrate to be processed so that the opening of the processing tank faces, and the processing tank is positioned. A process tank and the substrate to be processed are brought into close contact with each other, a predetermined process space is formed between them, an electrode for supplying a current to the divided process area is connected, and the process space Supplying a chemical solution to bring the divided treatment region into contact with the chemical solution; and a counter electrode provided to face the divided treatment region in the chemical solution in the treatment space and the divided treatment region Current supply, characterized by comprising a step of forming a metal thin film on the division processing region.

  A thin film processing method according to the present invention is a thin film forming method for forming a metal thin film on a substrate to be processed having a plurality of divided processing regions divided into a plurality of regions in units of processing regions, and at least the divided processing regions The processing tank having an opening portion covered by one of the substrates is relatively moved so that the opening of the processing tank faces the at least one divided processing region in the substrate to be processed, and the positioning is performed. A process tank and a substrate to be processed are brought into close contact with each other, a predetermined processing space is formed therebetween, a chemical solution is supplied into the processing space, the divided processing region and the chemical solution are brought into contact with each other, and the divided processing region And a step of forming a metal thin film.

  The plating tank has an opening on the surface that comes into contact with the substrate, a seal part for contacting the substrate, a chemical solution introduction and chemical solution discharge unit, a chemical solution circulation function, a power supply electrode to the substrate to be processed, and a counter to the substrate to be processed Counter electrodes and a power source connected to these counter electrodes (electrolytic plating apparatus).

  The plating tank has an opening on the surface that comes into contact with the substrate, and includes a seal portion for closely contacting the substrate, a chemical solution introduction / chemical solution discharge unit, and a chemical solution circulation function (electroless plating apparatus).

  The opening of the processing tank may have an area that can cover at least one divided processing region of the plurality of divided processing regions.

  The chemical liquid supply unit is configured to introduce a plurality of different chemical liquids into the plating tank when supplying a plurality of chemical liquid supply sources for supplying different chemical liquids and at least two different chemical liquids from the chemical liquid supply source. Mixing means for mixing immediately before the mixing.

  Furthermore, a holding means (vacuum chuck) for holding the substrate to be processed by vacuum suction can be provided.

  A substrate to be processed includes a pixel region in which a pixel thin film transistor circuit for liquid crystal display is formed, a circuit region in which a driving thin film transistor circuit for driving the pixel thin film transistor is formed, and a pixel thin film transistor circuit in the pixel region A lead-out region in which a wiring for connecting the lead-out wiring to the driving thin film transistor circuit in the circuit region is formed, and the divided processing region prevents contamination due to diffusion from a metal thin film to be provided thereon The opening of the processing tank is provided corresponding to at least the pixel region.

  In this specification, the “pixel region” refers to a region in which a pixel electrode using a thin film transistor as a switching element and its wiring are provided.

  In this specification, a “circuit region” refers to a region including a driver circuit (driver) that operates a thin film transistor for a pixel.

  In this specification, the “lead-out region” refers to a region in which wiring to be drawn from the pixel region to the circuit region is provided in order to connect the wiring in the pixel region to the driver circuit in the circuit region.

  The opening of the processing tank has an area that covers at least the pixel region as a divided processing region. This is because the wiring length is the longest in the pixel region of the display device. In this case, the opening of the processing tank may have an area that covers the extraction area together with the pixel area. This is because the line width (for example, 1 μm) from the pixel region to the extraction region is substantially the same. Further, the opening of the processing tank may have an area that covers the circuit region together with the pixel region and the extraction region. However, since the line width of the circuit area may be larger than the line width of the pixel area or the extraction area, it is optional to cover the circuit area.

  The substrate to be processed has a divided region made up of the surface to be processed divided into a plurality of units in the region to be processed. The opening of the processing tank has a size for processing the divided area of the substrate to be processed. The treatment tank is for holding a chemical for plating.

  ADVANTAGE OF THE INVENTION According to this invention, the copper thin film for wiring can be formed with sufficient uniformity with respect to the large sized board | substrate used for a liquid crystal display device etc.

  In addition, according to the present invention, since a plurality of thin film forming portions to be formed in a single substrate are processed in several groups, it is easy to accurately control the plating process for a large substrate. become.

  In addition, according to the present invention, by limiting the processing space for a large substrate, it is possible to minimize the consumption of the chemical used for the plating process, so it is easy to discharge standards in the treatment of chemical waste And the burden on the global environment is reduced.

  In addition, according to the present invention, it is possible to shorten the processing time by performing processing by combining a plurality of processing tanks, and it is possible to perform batch processing combining a plurality of processing steps.

  Furthermore, according to the present invention, since a plurality of chemical solutions are mixed immediately before use, a thin film forming process can be performed even when the lifetime of the chemical solutions is short.

Hereinafter, various preferred embodiments of the present invention will be described with reference to the accompanying drawings.
(First embodiment)
As a first embodiment of the present invention, a case where a copper thin film for wiring is formed in each processing region 9 using the electrolytic plating apparatus shown in FIG. 1 for the substrate 5 shown in FIG. 2 will be described.

  The substrate to be processed 5 of the present embodiment is a substrate for a display device such as a liquid crystal display device (LCD), for example, and is a substrate of glass or plastic. In the present embodiment, the thickness is 0.7 to 1 mm. And a rectangular transparent glass plate having a long side of 650 mm and a short side of 550 mm. For example, as shown in FIG. 2, the substrate 5 to be processed is a glass substrate having a size capable of taking six so-called LCD substrates having six divided processing regions 9 having a diagonal LCD screen size of 12.1 inches. is there. That is, the division processing area 9 corresponds to one LCD substrate.

  In other words, the processing area of one target substrate 5 is divided into six divided processing areas 9, and a margin (cutting allowance) 153 having a predetermined width is provided between each divided processing area 9. . A plating current is allowed to flow through the barrier conductive film 21 of the substrate 5 to be processed by contacting a first electrode, for example, a power supply electrode 8 described later, to the paste margin 153.

  In the present embodiment, as shown in FIG. 1, the substrate to be processed 5 is set so that the barrier conductive film 21 on the surface to be processed is directed downward, that is, the barrier conductive film 21 is directed toward the plating treatment tank 1. . In the present embodiment, the processing surface of the substrate to be processed 5 is brought into contact with the plating solution introduced into the plating processing tank 1, and is placed between the counter electrode 6 provided in the plating processing tank 1 via the feeding electrode 8. By applying a plating current, a plating film is formed on the processing surface of the substrate 5 to be processed. The barrier conductive film 21 formed on the substrate to be processed 5 is a nitride film such as TiN, TaN, or WN.

  As shown in FIG. 1, the plating apparatus of this embodiment includes a plating tank 1, a plating solution tank 2, a pump 3, a DC power supply 4, a counter electrode 6, a seal member 7, and a power supply electrode 8. And a controller 40. FIG. 1 is a cross-sectional view for explaining one plating treatment tank 1 portion corresponding to one divided treatment surface 9. The plating treatment tank 1 is a container having a large opening at the top, and a substrate to be processed 5 held by a holding means is disposed so as to close the upper opening. The plating treatment tank 1 is a container made of a resin (for example, polypropylene) or a metal (for example, stainless steel) whose inner surface is coated with a fluorine-based resin such as PTFE, PFA, FEP, PCTFE or the like. The entire plating tank 1 is supported by a moving mechanism (not shown) so as to be movable in each direction of the X axis, the Y axis, and the Z axis.

  The substrate 5 to be processed is held by vacuum suction, for example, by a vacuum chuck 50 shown in FIG. As shown in FIG. 3A, the vacuum chuck 50 has a plurality of grooves 51 formed in a lattice shape in a rigid main body, and a plurality of suction openings respectively opened at the intersections of the grooves 51 and the grooves 51, for example. And a mouth 52. Each suction port 52 communicates with the exhaust pipe 54 through a tubular communication passage 53 provided inside the main body of the vacuum chuck 50 as shown in FIG. The exhaust pipe 54 is connected to a suction port of a vacuum pump (not shown).

  The vacuum chuck 50 is supported by a moving mechanism (not shown) so as to be movable in the X axis, Y axis, and Z axis directions. Further, it is preferable that the moving mechanism also includes a swing mechanism for aligning the vacuum chuck 50 with the substrate 5 in parallel.

As shown in FIG. 1, the processing target substrate 5 closes the upper opening of the plating processing tank 1 during the plating process, whereby a predetermined processing space is formed between the processing tank 1 and the processing target substrate 5. A liquid introduction port 30 is opened at, for example, substantially the center of the bottom of the plating treatment tank 1, and a chemical solution for copper plating is supplied to the treatment space of the plating treatment tank 1 through the liquid introduction port 30. . In the electrolytic plating method of the present embodiment, an acidic copper plating solution such as copper sulfate or copper borofluoride (Cu (BF ₄ ) ₂ ) is used as a chemical solution for plating, for example.

  A supply port of the plating solution tank 2 communicates with the liquid introduction port 30 via a pump 3 and a liquid supply pipe 124. The pump 3 is provided between the plating solution tank 2 and the treatment tank 1 and sends a chemical solution for copper plating to the treatment tank 1. The operation of the pump 3 is controlled by the controller 40 in accordance with a predetermined process recipe so that the flow rate and pressure of the chemical solution are controlled. The liquid introduction port 30 is an inlet for allowing the plating solution to flow into the plating treatment tank 1, and may be any of the side wall surface and the bottom surface of the plating treatment tank 1, but in this embodiment, the liquid supply port 30 is supplied from the center of the bottom surface. It is.

  A sealing member 7 is attached to the upper end of the side wall of the plating tank 1 over the entire circumference of the opening of the plating tank 1. The seal member 7 has a function of preventing the chemical liquid from leaking outside from the processing space formed by the target substrate 5 and the processing tank 1 by contacting the lower surface of the target substrate 5 on the target surface side. It is. In this embodiment, a soft material such as silicone rubber is used as the seal member 7.

  A liquid discharge port 117 is provided on the side surface of the upper end portion of the plating treatment tank 1. The liquid discharge port 117 communicates with the plating solution tank 2 and the drain tank (not shown) via the drain pipe 119, respectively. As a result, the chemical solution for plating introduced into the treatment space of the plating treatment tank 1 is discharged out of the treatment tank 1 from the liquid discharge port 117, returns to the treatment solution tank 2 through the drain pipe 119, and again by the chemical solution pump 3. By being sent out into the processing tank 1, the plating solution is circulated. Further, by switching the flow path by a switching valve (not shown) provided in the drain pipe 119, the used plating solution may be discharged to the drain tank (not shown) and collected. Further, the plating solution tank 2 has a built-in impurity removing device (not shown), and after removing impurities from the recovered solution, which is a solution for plating treatment, and regenerating it, it is reused in the plating tank 1. You may have the ability. The plating tank 1 has a depth for accommodating the counter electrode 6.

  The power source 4 is for forming an electrolytic plating film on the surface of the substrate 5 to be processed. For example, a DC power source is connected, and one electrode is connected to the counter electrode 6 on the other side, for example. The negative electrode side is connected to the power supply electrode 8. A controller 40 is provided to automatically perform the plating process. The controller 40 controls the on / off operation of the power switch 41 at a predetermined timing. Further, the controller 40 is configured to control the amount of power supplied from the power source 4 and the amount of the plating solution by controlling the pump 3. As described above, the controller 40, the plating treatment tank 1, the drain pipe 119, the chemical liquid tank 2, the pump 3, and the liquid supply pipe 124 constitute a plating solution circulation supply mechanism.

  The counter electrode 6 that is one electrode is made of, for example, a mesh-like metal electrode (for example, a platinum mesh titanium mesh electrode) and faces the surface to be processed (lower surface) of the substrate 5 to be processed, that is, the barrier conductive film 21. Is disposed on the bottom side in the treatment tank 1.

  Thus, by making the counter electrode 6 into a mesh shape, the flow of the chemical introduced into the processing space from the liquid inlet 30 is not obstructed, and the uniformity of the formed plating film can be further improved. .

  Moreover, you may arrange | position the copper grain used as a melt | dissolution anode in the bowl-shaped counter electrode 6 by making this counter electrode 6 into a mesh-shaped bowl. The copper grains have a role of supplementing the chemical solution with copper ions consumed from the chemical solution by plating.

  The position and size of the liquid introduction port 30 increase in importance in order to control the flow of the chemical solution in the processing space as the area of the processing region increases. In the present embodiment, the liquid inlet 30 is provided in the center of the bottom of the plating tank 1 and the opening diameter is 50 mm. However, the present invention is not limited to this. A plurality of other liquid introduction ports 30 may also be provided at the bottom and peripheral edge of the processing tank 1 so that the chemical solution may be supplied from a plurality of locations toward the substrate 5 at the same time.

  The controller 40 controls the discharge pressure of the chemical solution from the pump 3 so that the internal pressure of the processing space of the plating tank 1 is slightly larger than the atmospheric pressure. When the processing space is set to a positive pressure, the chemical solution comes into sufficient contact with the entire surface of the substrate 5 to be processed, and the chemical solution is immersed in the fine uneven shape on the substrate 5 to be processed. is there.

  A plurality of power supply electrodes 8 are in contact with the lower surface of the substrate 5 to be processed outside the seal member 7. The plurality of power supply electrodes 8 are arranged at equal pitch intervals outside the seal member 7, and each is connected to the power supply 4 via a switch 41. In the present embodiment, for example, a multi-point power supply method using ten power supply electrodes 8 is used.

  As shown in FIG. 2, the substrate to be processed 5 according to this embodiment has a total of six divided processing regions 9 that are divided and arranged in three rows in the X-axis direction and in two rows in the Y-axis direction. Each divided processing region 9 corresponds to an element side substrate on which a thin film transistor (hereinafter referred to as TFT: Thin Film Transistor) used for a liquid crystal display device or the like is formed. For example, the substrate 5 to be processed is a glass substrate of 650 mm × 550 mm square. If so, six element-side substrates having a screen size of 12.1 inches diagonal can be produced.

  FIG. 4A shows a conceptual diagram of the element-side substrate relating to the thin film forming portion as one divided processing region 9. The thin film forming unit includes a pixel region 10 corresponding to a display portion of a liquid crystal display device, a lead region 11 provided around the pixel region 10 to lead out a wiring for sending a display signal to the pixel region 10, and a periphery of the lead region 11 And a circuit region 12 provided in the circuit. Of these three regions, the circuit region 12 may not be provided in the thin film forming portion. In the circuit area 12, an integrated circuit (drive circuit 16) for performing display and control is formed.

  FIG. 4B is a partially enlarged view showing a part of the thin film forming portion as the divided processing region 9 shown in FIG. In the pixel region 10, a TFT 17 used for image display and a pixel electrode 14 connected to its drain electrode are formed. The gate electrode and the source electrode of the TFT 17 are connected to each other by the wiring 15, and further connected to the corresponding electrode of the driving circuit 16 in the circuit region 12 through the wiring in the lead region 11.

(Example)
Next, the copper wiring formation process of the present embodiment will be described with reference to the process diagram of FIG.
FIG. 5A is an enlarged cross-sectional view showing one of a number of thin film transistors (TFTs) provided in a thin film forming portion in the substrate to be processed shown in FIG. A buffer layer 5 a made of SiO ₂ is inserted between the substrate 5 and the TFT 17. A gate electrode 17e is formed on the channel region 17c of the TFT 17 via a gate insulating film 17d. A source region 17a and a drain region 17b doped with impurities are formed on both sides so as to sandwich the channel region 17c. An interlayer insulating film 18 is formed so as to cover the source region 17a, the drain region 17b, the gate electrode 17e, and their peripheral regions. Contact holes 19 and 20 for exposing the source region 17a and the drain region 17b are formed in the interlayer insulating film 18, respectively.

  A barrier conductive film 21 made of titanium nitride (TiN) was formed on such a substrate 5 to be processed to an average film thickness of 50 nm by sputtering. The TiN film as the barrier conductive film 21 functions as an electrode on the substrate side during electroplating, and obtains electrical continuity between the copper wiring formed thereon and the source region 17a and drain region 17b of the TFT. And a function of preventing copper from diffusing from the copper wiring to the silicon layer constituting the TFT 17. As the barrier conductive film 21 having such a function, in addition to titanium nitride, nitrides such as tantalum (Ta), tungsten (W), vanadium (V), alloys containing a trace amount of silicon element, trace amounts of phosphorus and boron And alloys containing. In this embodiment, the barrier conductive film 21 made of TiN is formed so as to cover the entire surface of the substrate 5 to be processed, but this barrier conductive film 21 covers at least each thin film forming portion where the plating process is performed. It may be divided and provided.

  Subsequently, a seed film (not shown) made of copper (Cu) was formed to a thickness of 10 nm on the barrier conductive film 21 by sputtering. The seed film acts as a catalyst for performing the subsequent electroplating process of the copper film.

  Next, as shown in FIG. 5B, a photoresist film 22 having a predetermined pattern was formed by photolithography so that a region where wiring was to be formed on the barrier conductive film 21 was an opening. Subsequently, wiring made of, for example, a copper thin film was formed on the substrate 5 using the electrolytic plating apparatus shown in FIG.

  In the following, a film forming process of a copper thin film by the plating apparatus described with reference to FIG. 1 will be described with reference to FIG.

  First, the substrate to be processed 5 is sucked and held by the vacuum chuck, and this and the plating processing tank 1 are operated, so that the upper opening of the plating processing tank 1 is at least one divided processing region 9 of the substrate 5 to be processed and the plating processing tank. Relative alignment is performed so that one opening overlaps.

  The upper opening of the plating treatment tank 1 has such a size that a film formation scheduled surface (for example, the pixel region 10, the extraction region 11, and the circuit region 12) in which at least a copper thin film in the thin film forming unit needs to be formed is included in the opening. To do.

  After the planar alignment of the plating tank 1 and the substrate 5 to be processed, the relative height of the two is adjusted, and plating is performed so that the opening of the plating tank 1 is closed by the film formation planned surface of the substrate 5 to be processed. The processing tank 1 and the substrate 5 to be processed are brought into close contact with each other. That is, by pressing the seal portion 7 of the plating treatment tank 1 against the paste margin 153 of the substrate 5 to be processed, a closed processing space is formed that is blocked from the outside. Since the space between the substrate to be processed 5 and the plating tank 1 is sealed by the seal portion 7, there is no possibility that the chemical solution leaks from the processing space to the outside. At the same time as the close contact setting, since the power supply electrode 8 contacts the barrier conductive film 21, the two are placed in electrical conduction.

  Next, a chemical solution for electrolytic copper plating treatment is introduced into the processing space from the liquid inlet 30 and filled (not shown). The chemical solution filled in the plating treatment tank 1 comes into contact with the barrier conductive film 21 on the surface of the substrate to be treated 5, and then is discharged from the liquid discharge portion 117 provided on the side wall of the plating treatment vessel 1. To form a uniform flow of chemicals. The chemical liquid discharged from the liquid discharge section 117 is returned to the tank 2 through the return pipe 119 and then sent back into the plating treatment tank 1 by the pump 3 so that the chemical liquid circulates and flows in the processing space. It has become. A plurality of liquid discharge portions 117 may be provided on the upper side surface of the plating treatment tank 1 and are arranged so that the flow of the chemical solution on the surface of the substrate to be processed 5 is made uniform. The counter electrode 6 in the plating tank 1 is an electrode made of, for example, a titanium mesh plated with platinum, and has a structure that does not hinder the circulation of the chemical solution. The plating solution may be subjected to a filter process for removing impurities during the circulation, and may be subjected to operations such as replenishing components of the chemical solution in order to adjust the component and concentration of the solution. The circulating plating solution is controlled so as to maintain the liquid temperature under predetermined plating treatment conditions by a heating means (not shown) such as a heater provided in the solution tank, chemical solution circulation path and plating treatment tank 1. Has been.

In this example, a copper sulfate electrolytic plating bath was used as the electrolytic plating treatment solution, and the plating treatment was performed under the conditions of a liquid temperature of 20 ° C. and a current density of 10 mA / cm ² .

  After the treatment space is filled with the chemical solution and circulated and flowed, the switch 41 is turned on, and the power supply 4 starts to supply power to the power supply electrode 8 and the counter electrode 6. As a result, a thin film made of copper is electrolytically deposited in the resist openings 19 and 20 on the surface of the substrate 5 to be processed, and the copper electrode wirings 23a and 23b shown in FIG. b)) is formed.

  According to the present apparatus, power is supplied to the substrate 5 to be processed during the electrolytic plating process from the vicinity of the thin film forming portion 9 to be processed, and it is necessary to supply power from the peripheral portion of the large substrate as in the prior art. Therefore, the occurrence of unevenness due to voltage drop or the like is suppressed to a minimum. In addition, according to this apparatus, the plating solution only needs to be used in an amount sufficient to circulate through the plating tank corresponding to the divided portion, and the amount of plating solution used can be minimized. Yes, it is possible to suppress the burden on the environment such as plating treatment waste liquid.

  In this example, as shown in FIG. 5C, copper wirings 23a and 23b made of a copper thin film having a thickness of 300 nm were selectively formed in the opening portion of the resist film 22 by electrolytic plating. The formed copper wirings 23 a and 23 b are in contact with the barrier conductive film 21. As described above, the copper thin film forming process is completed for one of the plurality of divided processing regions 9 formed on the substrate 5 to be processed.

  Subsequently, the plating tank 1 is moved to the adjacent divided processing region 9 in the substrate 5 to be processed, and electrolytic plating is performed in the same procedure, and copper wirings 23a and 23b are formed one after another in each divided processing region 9. I will do it. In the present embodiment, the plating treatment tank 1 is moved while the substrate 5 to be treated is stationary. Conversely, the substrate 5 to be treated is moved while the plating treatment vessel 1 is stationary. A thin film may be formed in the plurality of divided processing regions 9.

  After the copper wirings 23a and 23b are formed in all the divided processing regions 9 on the substrate to be processed 5 in this way, the photoresist 22 is removed from the substrate to be processed 5 by an ashing method or the like. Copper wirings 23a and 23b having a desired wiring shape shown in d) were obtained.

  Subsequently, using the formed copper wirings 23a and 23b as a mask, the seed film (not shown) made of Cu and the barrier conductive film 21 made of TiN are etched. As a result, a Cu / TiN laminated wiring portion 24 is formed on the substrate 5 to be processed, as shown in FIG. Thus, the copper wiring using the plating apparatus of the present embodiment is formed on the substrate to be processed.

(Second Embodiment)
Next, a second embodiment will be described with reference to FIG. The same parts as those in FIGS. 1 to 5 are denoted by the same reference numerals, and detailed description thereof will be omitted.

  The apparatus of this embodiment is an example in which the efficiency of the plating process is improved by using a plurality of plating tanks 1 for the substrate 5 to be processed. In this embodiment, for example, the three plating tanks 1 are supported by a movable support member (not shown) in an array at equal pitch intervals along the X axis. As shown in FIG. 6A, the three plating treatment tanks 1 are arranged so that the long sides of the adjacent treatment tanks 1 face each other and the short sides are arranged in a straight line. That is, the plating tanks 1 are arranged such that the long side is parallel to the Y axis and the short side is parallel to the X axis. Each plating treatment tank 1 is provided with the same plating solution circulation supply mechanism as that of the above embodiment.

  First, as shown in FIG. 6B, in a state where the substrate 5 to be processed is sucked and held by the vacuum chuck 50, the plating tank 1 and the divided processing region 9 of the substrate 5 to be moved are moved relative to each other. Match. After the alignment, the substrate 5 to be processed and the processing tank 1 adsorbed by the vacuum chuck 50 are relatively moved in the vertical direction (Z direction) so that the opening of each plating processing tank 1 is connected to the substrate 5 to be processed. A plating space is formed so that the plating solution does not leak to form a processing space.

  Next, by filling the plating bath 1 with the plating solution, the plating solution comes into contact with the entire surface of each divided region 9. Thereafter, by connecting a power source between the counter electrode 6 (not shown) provided in the processing tank 1 and the barrier conductive film 21 (not shown) provided on the surface of each divided region as described above. The electrolytic plating process on the surface of the substrate 5 to be processed proceeds.

  After executing the electrolytic plating process for a predetermined time, the plating solution is reduced from the inside of the processing bath 1 so that the processing substrate 5 and the plating solution are not in contact with each other, and then the processing substrate 5 and the processing bath 1 are relative to each other in the Z-axis direction. Then, the opening of the processing tank 1 and the substrate 5 to be processed are separated from each other, and then the vacuum chuck 50 is handled to translate the substrate 5 to be processed in the arrow 101 direction (Y direction). An electrolytic plating process is performed on the two divided processing regions 9.

  Similar to the above embodiment, by using this apparatus for the substrate 5 to be processed having the six divided processing regions 9, the electrolytic plating treatment is simultaneously performed on the three divided processing regions 9 in one electrolytic plating processing step. Is possible. When the first electrolytic plating process is completed, the three electrolytic plating treatment tanks 1 are lowered and then moved in the Y-axis direction by a predetermined distance to align the opening of the treatment tank 1 with the untreated divided treatment region 9 in a plane. . Next, the three electrolytic plating treatment tanks 1 are raised, the treatment tank 1 is pressed against the substrate 5 to be treated, the treatment space is filled with a chemical solution, and this is circulated and flowed for plating treatment.

  In this way, the processing can be completed for the substrate to be processed 5 having the six divided processing regions 9 by only two steps.

  According to this embodiment, it becomes possible to shorten the process time required for the film-forming process of a copper thin film by arranging a plurality of plating treatment tanks. If the number of plating tanks is increased and the plating tanks are arranged so as to correspond to all the divided processing areas in the substrate to be processed, the plating process can be completed only once.

  Further, even when a plurality of plating treatment tanks are used as in this embodiment, the plating treatment process is powered from the periphery of each thin film forming portion as shown in the first embodiment. Therefore, compared to the conventional method of feeding power from the periphery of the substrate to be processed, the distance from the feeding position to the film formation region can be minimized, so that the copper film thickness unevenness due to voltage drop etc. Does not occur.

  Furthermore, in this embodiment, since it is possible to control the chemical temperature of the plating treatment liquid, the state of the liquid circulation, etc. for each treatment tank, temperature control is performed on a large-capacity plating treatment liquid like a conventional plating treatment tank. In addition, there is an advantage that it is not necessary to manage the liquid state and the film forming conditions can be made more precise than before.

(Third embodiment)
Next, a third embodiment will be described with reference to FIG.
The apparatus according to the present embodiment has a plurality of platings having openings of different sizes respectively formed corresponding to the multi-type substrate to be processed 5 having a plurality of divided processing regions 9a, 9b, 9c having different sizes. Processing tanks 1a, 1b, and 1c are provided. The substrate 5 to be processed of the present embodiment is made of a rectangular transparent glass plate having a thickness of 0.7 to 1 mm, a long side of 1500 mm, and a short side of 1200 mm, for example. In the substrate 5 to be processed, two first divided processing regions 9a, eight second divided processing regions 9b, and eighteen third divided processing regions 9c are formed in this order from the short side. . The first divided processing area 9a is for manufacturing a LCD for a 40 inch diagonal screen, for example, and the second divided processing area 9b is for manufacturing a LCD for a personal computer having a diagonal size of 12.1 inches for example. For example, the third divided processing area 9c is for manufacturing a mobile phone LCD.

  In this apparatus, on the movable support member (not shown), one first plating treatment tank 1a, four second plating treatment tanks 1b, and nine third plating treatment tanks are arranged in this order from the short side. 1c is provided. All of the first to third plating treatment tanks 1a, 1b, and 1c are arranged so that the short side is parallel to the X axis and the long side is parallel to the Y axis. The four second plating tanks 1b are arranged in a lattice pattern. Nine third plating tanks 1c are also arranged in a grid pattern. The first to third plating treatment tanks 1a, 1b, and 1c are respectively provided with the same plating solution circulation supply mechanism as that of the above embodiment.

  In this apparatus, after the electrolytic plating process is performed on the first group of divided processing regions 9a, 9b, and 9c, the plating solution is reduced from the inside of the processing tank 1 so that the substrate 5 and the plating solution are not in contact with each other. Then, the substrate 5 to be processed and the processing tank 1 are relatively moved in the Z-axis direction to separate the opening of the processing tanks 1a, 1b, 1c from the substrate 5 to be processed, and then the vacuum chuck 50 is handled to be processed. The processing substrate 5 is translated in the direction of the arrow 101 (Y direction), and an electrolytic plating process is performed on the next second group of divided processing regions 9a, 9b, 9c.

  By combining a plurality of plating treatment tanks 1a, 1b, and 1c having openings of different sizes with sizes corresponding to the divided treatment regions 9a, 9b, and 9c of various sizes, for example, for display devices of a small variety of products. Even when a substrate is to be manufactured in one substrate 5 to be processed, the plating process can be performed efficiently. That is, by using this apparatus, it is possible to complete the processing in only two plating processing steps for the substrate 5 to be processed having a total size of 28 pieces. In this case, since the parts such as the chemical tank 2 and the power supply part other than the plating tank 1 are common even if the size of the plating tank 1 changes, it is only necessary to combine the plating tanks 1 having different sizes. Such a response is possible.

  In addition, you may make it each plating processing tank 1a, 1b, 1c each independently plate-process the division | segmentation process area 9a, 9b, 9c in the to-be-processed substrate 5. FIG. Further, a plurality of plating tanks 1a, 1b, and 1c may be combined to perform the plating process simultaneously.

  According to the present embodiment, by arranging a plurality of plating treatment tanks 1 of different sizes, it is possible to greatly reduce the process time required for the copper thin film forming step and to produce a variety of products in small quantities. Can also be dealt with appropriately.

(Fourth embodiment)
Next, a fourth embodiment will be described with reference to FIGS. The same parts as those in FIGS. 1 to 7 are denoted by the same reference numerals, and detailed description thereof will be omitted because it is duplicated.

  In the present embodiment, formation of copper wiring on the substrate 5 to be processed by electroless plating will be described. Since the electroless plating method does not require a power source for performing the plating process on the substrate 5 to be processed unlike the electrolytic plating method of the above embodiment, the direct current power source 4 is supplied from the electroplating plating apparatus shown in FIG. The counter electrode 6 and the power supply electrode 8 are removed. On the other hand, in order to promote the electroless plating reaction, a heater 44 is attached to the bottom of the plating treatment tank 1 so that the chemical solution can be heated. The power supply 43 of the heater 44 is controlled by the controller 40. The heater 44 may be attached inside the plating tank 1.

  A copper wiring forming process by the plating apparatus will be described with reference to FIG.

  First, as shown in FIG. 5A, an interlayer insulating film 18 having openings 19 and 20 in the TFT 17 and the TFT source region 17a and the drain region 17b is formed on the substrate 5 to be processed.

  Next, a barrier conductive film 21 is deposited on the substrate 5 to be processed. The barrier conductive film 21 has electrical continuity between the formed copper wiring and the TFT source region 17a and drain region 17b, and also prevents copper atoms from diffusing from the copper wiring into the silicon layer constituting the TFT 17. There is. In this embodiment, a tantalum nitride film (TaN) is deposited as the barrier conductive film 21 with a film thickness of 50 nm by sputtering.

  Next, as shown in FIG. 5B, a photoresist film 22 was patterned by a photolithography method so that a region where a wiring was to be formed on the barrier conductive film 21 was an opening.

Thereafter, in order to form a copper thin film by electroless plating, a tin film (SnCl ₂ ) solution and a palladium chloride (PdCl ₂ ) solution are used to form the barrier conductive film 21 exposed in the resist openings 19 and 20. Catalytic treatment with Pd is performed on the surface. In forming the copper thin film by the electroless plating method, copper atoms are introduced into the surface of the barrier conductive film 21 exposed at the resist openings 19 and 20 by displacement plating or the like in addition to the catalytic treatment. Such a technique may be used.

  Next, a wiring made of a copper thin film is formed on the divided processing region 9 of the substrate 5 to be processed using the electroless plating apparatus shown in FIG.

  First, the plating tank 1 is disposed so as to face one of the thin film forming portions 9 in the substrate 5 to be processed. After arranging the plating tank 1, the heights of the substrate to be processed 5 and the plating tank 1 are adjusted, and the opening of the plating tank 1 is brought into close contact with the film forming surface of the substrate 5. Since the plating member 1 is provided with the seal member 7 as described above, the plating solution does not leak out of the opening by being in close contact with the substrate 5 through the seal member 7.

  Next, a chemical solution used for the electroless copper plating process is introduced and filled into the processing space from the liquid inlet 30 (not shown). The plating solution filled in the plating tank 1 is discharged from the liquid discharger 117 provided on the side wall of the plating tank 1, returned to the tank 2, and then again into the plating tank 1 by the pump 3. The chemical solution circulates and flows in the tank by being sent out. The plating treatment solution may be subjected to a filter treatment for removing impurities in the middle of the circulation, or may be supplemented with components to adjust the concentration of the solution. The temperature of the circulating plating treatment liquid is adjusted by the heater 44 so as to maintain the liquid temperature under predetermined plating treatment conditions.

In this example, an electroless plating treatment was performed using a plating treatment solution having the composition shown in Table 1 as the electroless plating treatment solution.

  By filling and circulating the plating treatment solution in the plating treatment tank 1, a copper thin film is deposited on the Pd catalyst introduced onto the barrier conductive film 21. In this embodiment, the electroless plating solution having the above composition was used to adjust the temperature of the solution to 60 ° C. and the pH of the plating bath to a range of 12 to 13 to form the electroless copper plating films 23a and 23b.

  By the way, in the formation of copper thin film by the conventional electroless plating method, the power supply is not required to form the copper thin film unlike the electrolytic plating method, so the film thickness unevenness caused by the voltage drop due to the arrangement of power supply etc. occurs However, when the flow of the plating treatment solution in the vicinity of the plating treatment surface is not uniform, there is a problem that unevenness of the film thickness due to this occurs.

  On the other hand, according to the electroless plating apparatus of the present invention, a portion corresponding to the divided film forming region in the substrate to be processed, as compared with the conventional plating apparatus that collectively processes the substrate to be processed. Therefore, there is no need to control the flow of liquid over a large area as in the case of conventional devices, and it is possible to suppress uneven film thickness of the copper thin film to be formed. is there.

  In the present embodiment, since the chemical solution only needs to be circulated to the processing space corresponding to the divided processing region, the consumption amount of the chemical solution can be minimized, and the waste liquid after the plating process is reduced. It becomes possible to control the environmental load.

  In this embodiment, as shown in FIG. 5C, copper wirings 23a and 23b made of Cu having a film thickness of 300 nm are selected as openings in the resist film 22 formed on the surface of the substrate to be processed 5 by electrolytic plating. Formed. In this way, the copper thin film forming process for one of the plurality of thin film forming portions formed on the substrate to be processed 5 is completed.

  Subsequently, by moving the plating tank 1 to another thin film forming portion in the substrate 5 to be processed, electrolytic plating is performed in the same procedure, and copper wirings 23 are formed one after another on each thin film forming portion 9. To do. In this embodiment, the plating tank 1 is moved, but the substrate 5 to be processed may be moved.

  After the copper wirings 23 are formed on all the thin film forming portions on the substrate to be processed 5 in this way, the photoresist 22 formed on the substrate to be processed 5 is removed, so that FIG. As shown, copper wirings 23a and 23b made of a copper thin film having a desired wiring shape were formed on the substrate 5 to be processed.

  Subsequently, the barrier conductive film 21 made of TiN is etched using the formed copper wirings 23a and 23b as a mask. As a result, a wiring portion 24 made of a Cu / TaN laminated film was formed on the substrate 5 as shown in FIG.

(Fifth embodiment)
Next, a fifth embodiment will be described with reference to FIGS. 9 and 10.
In the plating apparatus of this embodiment, it is possible to perform up to the post-process after copper plating. As shown in FIGS. 9A and 9B, the apparatus of this embodiment includes two rows and four types of different treatment tanks 91 to 94. A total of eight processing tanks are arranged side by side in the same kind, and the first processing tank 91 to the fourth processing tank 94 are sequentially arranged in series.

  The first processing tank 91 is a plating processing tank for performing a copper plating process on the processing substrate 5. The second processing tank 92 is a cleaning / drying processing tank for cleaning and drying the substrate surface after the copper plating process. The 3rd processing tank 93 is a plating processing tank for forming the barrier electrically conductive film which coat | covers a copper plating film as a post-processing process. The fourth processing tank 94 is a cleaning / drying processing tank 94 for cleaning and drying the substrate surface after the formation of the barrier conductive film.

With reference to FIG. 10, a series of plating processes will be described using the apparatus of this embodiment.
First, a Cu plating solution is brought into contact with the thin film forming portions 5a and 5b in the substrate 5 to be processed by the first processing tank 91, and a copper thin film having a predetermined thickness is plated on the barrier conductive film 21 on the substrate. . The formation of the copper thin film at this time may be either an electrolytic plating method or an electroless plating method.

  After the plating processing of the thin film forming portions 5a and 5b is completed, the first processing tank 91 moves to the second thin film forming portions 5c and 5d that become the next plating processing region. At the same time, the second treatment tank 92 moves and is positioned at the first thin film forming portions 5a and 5b.

Similar to the first processing tank 91, the second processing tank 92 is in close contact with the substrate 5 to be processed through a seal portion, and pure water or cleaning is used as a cleaning liquid from the liquid inlet 30 provided at the lower part of the tank. A solution or the like is introduced into the tank. The cleaning solution is filled in the processing tank and comes into contact with the surfaces of the thin film forming portions 5a and 5b, so that the plating solution adhering during the copper plating process is removed. The cleaning liquid is discharged out of the tank from the discharge part on the side wall of the processing tank, and is poured into a waste liquid tank (not shown) of the cleaning liquid. At this time, the plating tank 91 performs the plating process in the thin film forming portions 5c and 5d in the same manner as described above.

  Subsequently, the plating tank 91 moves to the areas 5e and 5f which are the next thin film forming portions. Along with this, the cleaning treatment tank 92 moves to the thin film forming portions 5c and 5d where the plating process has been performed, and performs the cleaning process in the same manner. The thin film forming portions 5a and 5b that have been cleaned after the plating process are then processed by a post-process tank 93 for performing a post-process after the plating process.

In the fifth embodiment, as a post-treatment step after copper plating, a barrier film made of cobalt Co, tungsten W, and boron B is used for the purpose of protecting the surface of the copper thin film that is easily oxidized and suppressing the diffusion of copper to the outside ( CoWB film) was formed by an electroless plating method to completely cover the copper thin film. Electroless plating solutions for forming a CoWB film include cobalt chloride (CoCl ₂ ) solution, citric acid (H ₃ C ₆ H ₅ O ₇ · H ₂ O) solution, tungstic acid (H ₂ WO ₄ · 2H _2). O) Solution and dimethylamine boron (DMAB: (CH ₃ ) ₂ NH · BH ₃ ) as main components, pH 9.5, liquid temperature 75 ° C., electroless plating treatment using plating treatment tank 93, film A CoWB film having a thickness of 50 nm was formed. Furthermore, the thin film forming portions 5a and 5b were washed with water and dried using a fourth treatment tank 94 (not shown in FIG. 10).

  In this way, by sequentially performing the cleaning and post-processing steps on the thin film forming portions of the divided processing regions 5c, 5d, 5e, and 5f sequentially, a plurality of steps can be performed in succession. . In addition to this, it is possible to combine a plurality of processing steps by further increasing the number of processing tanks.

(Sixth embodiment)
Next, a sixth embodiment will be described with reference to FIG.
This embodiment demonstrates the case where a some process is performed using a single processing tank.

  As shown in FIG. 11, three tanks 111, 112, and 113 are provided as chemical solution supply units that communicate with the processing tank 1. The first chemical tank 111 contains a plating chemical, the second chemical tank 112 contains a cleaning chemical, and the third chemical tank 113 contains a post-treatment chemical. In this apparatus, the supply of the chemical solution is switched by the switching valves 116a, 116b, and 116c provided in front of the introduction portion of the chemical solution supply pump 115, respectively. Each chemical solution supplied to the processing tank 1 is discharged to the outside of the processing tank 1 from a liquid discharge portion 117 provided on the side wall of the processing tank, but is changed by a switching valve 118a, 118b, 118c provided in the discharge path. Switch to a route.

  Next, the case where the same operation as each process performed in the said 5th Embodiment is performed with the apparatus of this embodiment is demonstrated.

  First, after the processing tank 1 is disposed at a predetermined position on the substrate to be processed, the valve 116a is opened, and the chemical solution for plating treatment is supplied from the plating treatment chemical solution tank 111 via the solution supply pipe 121 to the chemical solution via the switching valve 116a. Supplied to the pump 115 for use. The chemical solution supplied to the processing tank 111 is discharged out of the processing tank 1 through the discharge unit 117 while performing the plating process on the substrate 5 to be processed. When the switching valve 118a is opened, the plating solution discharged from the discharge unit 117 returns to the plating solution tank 111 again via the return pipe 120 and is circulated and used again for the plating process.

  After the plating process is completed, the switching valve 116a is closed and the supply of the plating process chemical solution to the chemical solution supply pump is stopped.

  Subsequently, the switching valve 116 b is opened, and pure water for cleaning is supplied to the chemical pump 115. At the same time, the switching valve 118b on the liquid discharge part side is opened, and the discharged liquid from the processing tank 111 is discharged to an external waste liquid tank (not shown). Thus, the surface of the substrate to be processed after the plating process is cleaned, and the inside of the processing tank 111 is also cleaned at the same time.

  After the cleaning process is finished, the supply of cleaning water to the processing tank 111 is stopped by closing the switching valve 116b. After the cleaning water in the processing tank 111 is discharged, the switching valve 116 c is opened, and the post-treatment chemical is supplied into the processing tank 111. At the same time, by opening the switching valve 118c on the liquid discharge side, the post-treatment chemical solution circulates and the post-treatment process is performed.

  Thereafter, the substrate to be processed and the processing tank may be cleaned again by switching the valve. As described above, a series of plating processes can be performed using the plating apparatus of this embodiment.

(Seventh embodiment)
Next, a seventh embodiment will be described with reference to FIG.
In the apparatus of this embodiment, the plating treatment chemical solution introduced into the treatment tank 1 is divided and stored in two chemical solution tanks, a first treatment solution tank 132 and a second treatment solution tank 133.

  The piping 134 from the first tank 132 to the pump 140 is provided with a valve 135 and a mass flow controller 136 (MFC). A valve 138 and a mass flow controller 139 (MFC) are also provided in the pipe 137 from the second tank 133 to the pump 140. The operations of the MFCs 136 and 139 are controlled by the controller 40.

  The two types of plating treatment chemicals are introduced from the tanks 132 and 133 to the chemical supply pump 140 at predetermined flow rates from the tanks 132 and 133 via the MFCs 136 and 139, respectively, immediately before the processing tank 1 performs the thin film formation process on the substrate 5 to be processed. And are fed into the treatment tank 1. Thus, for example, even when the life of the treatment chemical solution is short due to the progress of the reaction of the chemical solution in a mixed state, each is divided and stored as a plurality of stable chemical solutions. By mixing immediately before the step, the thin film forming process can be performed without causing the problem of the liquid life.

  In order to improve the mixing state of the two liquids, it is desirable to supply the liquid to the treatment tank 1 at a pressure slightly higher than the normal pressure. Moreover, you may make it provide the static mixer which stirs the liquid which passes in the supply flow path 124 just before a processing tank.

  According to this embodiment, since a plurality of types of chemical solutions are mixed immediately before the plating process, deterioration of each chemical solution is prevented, and a fresh chemical solution can always be supplied into the processing space. In particular, the apparatus of this embodiment is suitable for a chemical solution that deteriorates in a short time by mixing with another chemical solution or a chemical solution that generates heat due to a chemical reaction.

(Eighth embodiment)
Next, an eighth embodiment will be described with reference to FIG.
In this embodiment, as shown in FIG. 13, the processing tank 1 and the to-be-processed substrate 5 are arrange | positioned upside down. That is, the substrate 5 to be processed is placed on the support base 150 and the plurality of processing tanks 1 are held by the vacuum chuck 50. It is assumed that the support base 150 has high flatness, has high rigidity, does not easily deform, and does not damage the substrate 5 to be processed. The support table 150 may suck and hold the substrate 5 to be processed in the same manner as the vacuum chuck 50 described above. The support table 150 is supported by a drive mechanism (not shown) so as to be movable in each of the X axis, Y axis, and Z axis directions, and also capable of rotating around the Z axis by θ rotation. The vacuum chuck 50 that holds the processing tank 1 is also supported by other drive mechanisms (not shown) so as to be movable in the X-axis, Y-axis, and Z-axis directions. The processing tank 1 may be held by a holding means other than the vacuum chuck 50. When the processing tank 1 is held by other holding means, it is desirable to attach the processing tank 1 so as to be detachable from the holding means in order to facilitate maintenance and inspection.

  A copper plating treatment liquid supply source, a cleaning liquid supply source, and a dry gas supply source (not shown) communicate with the liquid introduction port 30 of each treatment tank 1 through a flexible tube and a switching valve, respectively. Drain passages (not shown) for drainage and exhaust are opened at appropriate positions in each treatment tank 1. The drain passage communicates with a suction port of a suction pump (not shown).

A case where copper is plated on the substrate to be processed by the apparatus of this embodiment will be described.
First, the substrate 5 to be processed is placed on the support base 150. The processing tank 1 is sucked and held by the vacuum chuck 50 in advance. An alignment mark on the substrate to be processed 5 is detected by a position sensor (not shown), and at least one of the vacuum chuck 50 and the support base 150 is moved based on the detected position to align the two planes.

  Next, the opening of the processing tank 1 is brought into close contact with the upper surface of the substrate to be processed 5, a chemical solution is supplied into each processing space, and copper thin films 23 a and 23 b are formed in each divided processing region 9.

  According to this embodiment, since the flatness of the substrate 5 to be processed is improved, a more uniform copper plating process can be performed.

(Ninth embodiment)
Next, a ninth embodiment will be described with reference to FIG.
In the present embodiment, the support base 150 can be tilted as shown in FIG. That is, the tilting rod 152 is movably supported by a cylinder (not shown) at the lower end, and the upper end is connected to one end side of the support base 150 via the shaft 151. In order to improve the stability of the tilting operation of the support base 150, it is desirable to attach the two tilt rods 152 to the support base 150 symmetrically. When the tilting rod 152 is protruded from the cylinder by a predetermined stroke, the support base 150 is tilted at a predetermined angle θ with respect to the horizontal plane.

  According to this embodiment, the flow state of the chemical solution in the processing space can be changed according to the tilt angle θ. Further, by performing the processing with the substrate 5 and the processing tank 1 tilted, the projected floor area of the processing apparatus is reduced, and there is an advantage that the floor area necessary for installing the apparatus can be reduced.

(Tenth embodiment)
Next, a tenth embodiment will be described with reference to FIG.
In this embodiment mode, a case where a thin film transistor manufactured using the device of the above embodiment mode is used for an active matrix liquid crystal display device will be described. The display device 160 includes an insulating substrate 161 having a circuit portion made of a thin film transistor, a pair of insulating substrates 162 having an opposing electrode (not shown), and an electro-optic material 163 held between the two. Panel structure. As the electro-optical material 163, a liquid crystal material is widely used. In addition to this, a display device including a single substrate in which a light emitting material used for an organic EL (Electro Luminescence) display is formed on the pixel electrode 171 on the insulating substrate 161 without using the insulating substrate 162 may be used. good. A pixel array portion 164 and a drive circuit portion are integrated on the lower insulating substrate 161. The drive circuit section is divided into a vertical drive circuit 165 and a horizontal drive circuit 166.

  Further, a terminal portion 167 for external connection is formed at the upper end of the peripheral portion of the insulating substrate 161. The terminal portion 167 is connected to the vertical drive circuit 165 and the horizontal drive circuit 166 through a wiring 168. In the pixel array portion 164, a row-shaped gate wiring 169 and a column-shaped signal wiring 170 are formed. A pixel electrode 171 and a thin film transistor 172 for driving the pixel electrode 171 are formed at the intersection of both wirings. The gate electrode of the thin film transistor 172 is connected to the corresponding gate wiring 169, the drain region is connected to the corresponding pixel electrode 171, and the source region is connected to the corresponding signal wiring 170. The gate wiring 169 is connected to the vertical driving circuit 165, while the signal wiring 170 is connected to the horizontal driving circuit 166.

  The thin film transistor 172 that switches the pixel electrode 171 and the thin film transistor included in the vertical drive circuit 165 and the horizontal drive circuit 166 are manufactured according to the present invention, and the resistance of the signal wiring is lower than the conventional one. Therefore, even in a display device with a large screen, there is no signal delay due to wiring resistance, and high-speed operation of a drive circuit or the like is also possible. Therefore, not only the drive circuit but also a higher-performance processing circuit can be integrated.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the scope of the invention in the implementation stage. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, you may combine suitably the component covering different embodiment.

  The present invention, in the field of large flat panel display devices typified by liquid crystal display devices, increases the wiring length due to the increase in screen size, miniaturization due to higher definition, peripheral circuits due to multifunctional functions, monolithic addition functions, etc. Is used to form copper wiring corresponding to

1 is a schematic sectional view showing a thin film forming apparatus (electrolytic plating apparatus) according to an embodiment of the present invention. The top view which shows the to-be-processed substrate which has a some thin film formation part. (A) is a top view which shows the vacuum chuck for hold | maintaining a to-be-processed substrate by suction, (b) is a side view of a vacuum chuck. (A) is a plane schematic diagram which shows the outline | summary of the thin film circuit pattern formed in a thin film formation part, (b) is an enlarged plan schematic diagram which expands and shows a part of thin film circuit pattern. (A)-(e) is sectional drawing which shows the manufacturing process of the TFT circuit for LCD. (A) is a top view which shows the positional relationship of a plating processing tank and a thin film formation part, (b) is a side view which shows the positional relationship of a plating processing tank and a thin film formation part. (A) is a top view which shows the positional relationship of the plating treatment tank for many varieties, and a thin film formation part, (b) is a side view which shows the positional relationship between a plating treatment tank and a thin film formation part. The schematic sectional drawing which shows the thin film formation apparatus (electroless-plating apparatus) which concerns on other embodiment of this invention. (A) is a top view which shows the positional relationship of the plating processing tank provided to the processing tank for back processes, and a thin film formation part, (b) is a side view which shows the positional relationship of a plating processing tank and a thin film formation part. The schematic sectional drawing which shows the thin film forming apparatus (single metal-plating processing tank which can be processed in multiple numbers) concerning other embodiment of this invention. The schematic sectional drawing which shows the thin film forming apparatus which concerns on other embodiment of this invention. The schematic sectional drawing which shows the thin film forming apparatus which concerns on other embodiment of this invention. The schematic sectional drawing which shows the thin film forming apparatus which concerns on other embodiment of this invention. The schematic sectional drawing which shows the thin film forming apparatus which concerns on other embodiment of this invention. The schematic perspective view of a display apparatus. The figure which shows the outline | summary of the conventional plating apparatus. The top view which shows typically the relationship with the distance from the feeding point at the time of the electrolytic plating of the conventional method to each thin film formation part in a to-be-processed substrate.

Explanation of symbols

1, 1a, 1b, 1c ... plating tank,
2 ... Chemical tank, 3 ... Pump, 4 ... Power supply,
5 ... substrate,
5a to 5f: division processing region (thin film forming portion),
6 ... Counter electrode, 7 ... Seal member, 8 ... Feed electrode,
9, 9a, 9b, 9c ... division processing region (thin film forming portion),
10: Pixel region,
11 ... drawer area,
12 ... Circuit area,
14: Pixel electrode,
15 ... wiring,
16 ... Drive circuit,
17 Thin film transistor (TFT),
17a ... source region, 17b ... drain region, 17c ... channel region,
17d: gate insulating film (SiO ₂ film), 17e: gate electrode,
18 ... interlayer insulating film (SiO ₂ film), 19, 20 ... contact holes,
21 ... Barrier conductive film (TiN, TaN, WN),
22 ... resist film,
23a ... Source electrode (copper electrode), 23b ... Drain electrode (copper electrode),
30: Liquid inlet,
40 ... Controller, 41 ... Switch, 43 ... Power supply, 44 ... Heater,
50 ... Vacuum chuck (holding means),
51 ... Groove, 52 ... Suction port, 53 ... Communication passage, 54 ... Exhaust pipe,
88 ... XYZθ table,
91, 92, 93, 94 ... treatment tanks,
111, 112, 113, 132, 133 ... tank (liquid supply source),
115,134 ... pump,
116a-116c, 118a-118c ... switching valve,
117 ... Liquid discharge port,
119 ... Drain pipe (return pipe),
120 ... return pipe,
121-124 ... liquid supply pipes,
150 ... support base, 152 ... tilting rod 153 ... glue allowance

Claims (19)

A thin film processing apparatus for forming a metal film by a plating method on a substrate to be processed having a divided region consisting of a surface to be processed divided into a plurality of regions to be processed,
A thin film processing apparatus, comprising: an opening having a size for processing at least one of the divided areas, and having at least one processing tank for holding a chemical for plating. A thin film processing apparatus for forming a metal film by a plating method on a substrate to be processed having a divided region consisting of a surface to be processed divided into a plurality of regions to be processed,
An opening having a size for processing at least one of the divided regions, a treatment tank for holding a chemical for plating, and a chemical for supplying the chemical to the treatment tank A chemical supply section;
An alignment mechanism for aligning by moving the predetermined division processing region and the opening relative to each other;
A thin film processing apparatus comprising:   The thin film processing apparatus according to claim 1, wherein a plurality of the processing tanks are provided.   The thin film processing apparatus according to claim 1, wherein the plurality of processing tanks are processing tanks having openings having different sizes.   A first electrode for electrolytic plating on a predetermined surface of a substrate to be processed provided in each of the divided processing tanks, a second electrode provided to face the first electrode, 5. A thin film according to claim 1, further comprising: a power source for supplying electric power for electroplating the substrate to be processed between the first and second electrodes. Forming equipment.   The size of the opening of the processing tank is larger than at least one divided processing region of the plurality of divided processing regions of the substrate to be processed. Thin film processing equipment.   The said chemical | medical solution supply part comprises the several chemical | medical solution supply source which supplies a different chemical | medical solution, and the switching means which switches the chemical | medical solution supply from the said chemical | medical solution supply source, The any one of Claim 1 thru | or 6 characterized by the above-mentioned. The thin film processing apparatus described.   The chemical liquid supply unit introduces the two or more different chemical liquids into the plating tank when supplying a plurality of chemical liquid supply sources for supplying different chemical liquids and at least two or more different chemical liquids from the chemical liquid supply source. The thin film processing apparatus according to claim 1, further comprising a mixing unit that mixes immediately before being performed.   The thin film processing apparatus according to claim 3, wherein the plurality of processing tanks perform the same processing.   The thin film processing apparatus according to claim 3, wherein the plurality of processing tanks perform different processes.   The thin film processing apparatus according to claim 1, further comprising a holding unit that holds the substrate to be processed by vacuum suction. The substrate to be processed includes a pixel region in which a pixel thin film transistor circuit for liquid crystal display is formed, a circuit region in which a driving thin film transistor circuit for driving the pixel thin film transistor is formed, and a pixel thin film transistor circuit in the pixel region And a lead area in which a wiring for connecting the wiring drawn out from the driving thin film transistor circuit in the circuit area is formed,
The division processing region is covered with a barrier conductive film that prevents contamination due to diffusion from the metal thin film to be provided thereon,
The thin film processing apparatus according to claim 1, wherein an opening of the processing tank is provided corresponding to at least the pixel region. A thin film forming method for forming a metal thin film on a substrate to be processed having a plurality of divided processing regions divided into a plurality of regions in units of processing regions,
A processing bath having an opening portion covering at least one of the divided processing regions is moved relative to at least one divided processing region in the substrate so that the opening of the processing bath faces the processing bath. Aligning, bringing the processing tank and the substrate to be processed into close contact with each other, and forming a predetermined processing space between them;
Connecting an electrode for supplying a current to the divided processing region;
Supplying a chemical solution into the processing space, and bringing the divided processing region and the chemical solution into contact with each other;
Supplying a current to the counter electrode provided so as to face the divided processing region and the divided processing region in the chemical solution in the processing space, and forming a metal thin film in the divided processing region;
A thin film forming method comprising: A thin film forming method for forming a metal thin film on a substrate to be processed having a plurality of divided processing regions divided into a plurality of regions in units of processing regions,
A processing bath having an opening portion having an area covered by at least one of the divided processing regions is moved relative to at least one divided processing region in the substrate so that the opening of the processing bath faces the processing bath. Aligning the process tank and the substrate to be processed, and forming a predetermined processing space between them;
Supplying a chemical solution into the processing space, bringing the divided processing region and the chemical solution into contact with each other, and forming a metal thin film in the divided processing region;
A thin film forming method comprising:   The processing space forming step moves one processing tank with respect to a plurality of divided processing regions, or moves the substrate to be processed with respect to one processing tank. 14. The thin film forming method according to claim 14. The processing space forming step moves a plurality of the processing tanks with respect to a plurality of the divided processing regions, or moves the substrate to be processed with respect to the plurality of processing tanks. Or the thin film forming method according to any one of 14; A pixel of a display device and a thin film transistor for driving the pixel,
An insulating substrate;
A channel region formed on the substrate;
A source region and a drain region which are provided so as to sandwich the channel region and are doped with a predetermined impurity;
A gate insulating film formed on the channel region;
A gate electrode formed on the gate insulating film;
An interlayer insulating film covering the gate electrode;
A source electrode formed by using the method according to claim 13 or 14, and conducting from the side of the interlayer insulating film to the source region;
A drain electrode formed by using the method according to claim 13 or 14, and conducting from the side of the interlayer insulating film to the drain region;
A thin film transistor comprising: It has a pair of substrates bonded to each other through a predetermined gap and an electro-optic material held in the gap. One substrate is formed with a counter electrode, and the other substrate is driven with a pixel electrode. A display device formed of a semiconductor element,
A pair of substrates bonded to each other through a predetermined gap and an electro-optic material held in the gap, a counter electrode is formed on one substrate, and a pixel and this are driven on the other substrate A display device formed of a thin film transistor,
The thin film transistor
An insulating substrate;
A semiconductor layer provided on the substrate;
A channel region provided in the semiconductor layer;
A source region and a drain region which are provided in the semiconductor layer so as to sandwich the channel region and are doped with a predetermined impurity;
A gate insulating film formed on the channel region;
A gate electrode formed on the gate insulating film;
An interlayer insulating film covering the gate electrode;
A source electrode formed by using the method according to claim 13 or 14, and conducting from the side of the interlayer insulating film to the source region;
A drain electrode formed by using the method according to claim 13 or 14, and conducting from the side of the interlayer insulating film to the drain region;
A display device comprising: A display device comprising a pixel electrode on a substrate and a semiconductor element connected thereto, and an electro-optic material provided on the pixel electrode,
The semiconductor element is a display device formed of a thin film transistor,
The thin film transistor
An insulating substrate;
A semiconductor layer provided on the substrate;
A channel region provided in the semiconductor layer;
A source region and a drain region which are provided in the semiconductor layer so as to sandwich the channel region and are doped with a predetermined impurity;
A gate insulating film provided on the channel region;
A gate electrode provided on the gate insulating film;
An interlayer insulating film covering the gate electrode;
A source electrode that is provided using the method of claim 13 or 14 and that conducts from the side of the interlayer insulating film to the source region;
A drain electrode provided by using the method of claim 13 or 14, and conducting from the side of the interlayer insulating film to the drain region;
A display device comprising:

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