JP2005064315A - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP2005064315A
JP2005064315A JP2003294215A JP2003294215A JP2005064315A JP 2005064315 A JP2005064315 A JP 2005064315A JP 2003294215 A JP2003294215 A JP 2003294215A JP 2003294215 A JP2003294215 A JP 2003294215A JP 2005064315 A JP2005064315 A JP 2005064315A
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Prior art keywords
film
insulating film
electrode layer
semiconductor device
electrode
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Pending
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JP2003294215A
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Japanese (ja)
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JP2005064315A5 (https=
Inventor
Yusuke Morizaki
祐輔 森▲崎▼
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Fujitsu Ltd
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Fujitsu Ltd
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Publication of JP2005064315A5 publication Critical patent/JP2005064315A5/ja
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  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2003294215A 2003-08-18 2003-08-18 半導体装置および半導体装置の製造方法 Pending JP2005064315A (ja)

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JP2003294215A JP2005064315A (ja) 2003-08-18 2003-08-18 半導体装置および半導体装置の製造方法

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JP2003294215A JP2005064315A (ja) 2003-08-18 2003-08-18 半導体装置および半導体装置の製造方法

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JP2005064315A true JP2005064315A (ja) 2005-03-10
JP2005064315A5 JP2005064315A5 (https=) 2006-08-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277318A (ja) * 2004-03-26 2005-10-06 Semiconductor Leading Edge Technologies Inc 高誘電体薄膜を備えた半導体装置及びその製造方法
JP2007335606A (ja) * 2006-06-14 2007-12-27 Fujitsu Ltd 半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005277318A (ja) * 2004-03-26 2005-10-06 Semiconductor Leading Edge Technologies Inc 高誘電体薄膜を備えた半導体装置及びその製造方法
JP2007335606A (ja) * 2006-06-14 2007-12-27 Fujitsu Ltd 半導体装置及びその製造方法

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