JP2005056914A5 - - Google Patents

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Publication number
JP2005056914A5
JP2005056914A5 JP2003206042A JP2003206042A JP2005056914A5 JP 2005056914 A5 JP2005056914 A5 JP 2005056914A5 JP 2003206042 A JP2003206042 A JP 2003206042A JP 2003206042 A JP2003206042 A JP 2003206042A JP 2005056914 A5 JP2005056914 A5 JP 2005056914A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2003206042A
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JP2005056914A (ja
JP4177192B2 (ja
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Priority claimed from JP2003206042A external-priority patent/JP4177192B2/ja
Priority to JP2003206042A priority Critical patent/JP4177192B2/ja
Application filed filed Critical
Priority to US10/793,886 priority patent/US20050028934A1/en
Publication of JP2005056914A publication Critical patent/JP2005056914A/ja
Publication of JP2005056914A5 publication Critical patent/JP2005056914A5/ja
Priority to US11/735,657 priority patent/US7713756B2/en
Publication of JP4177192B2 publication Critical patent/JP4177192B2/ja
Application granted granted Critical
Priority to US12/330,016 priority patent/US20090095423A1/en
Priority to US12/434,877 priority patent/US8083889B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2003206042A 2003-08-05 2003-08-05 プラズマエッチング装置およびプラズマエッチング方法 Expired - Fee Related JP4177192B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003206042A JP4177192B2 (ja) 2003-08-05 2003-08-05 プラズマエッチング装置およびプラズマエッチング方法
US10/793,886 US20050028934A1 (en) 2003-08-05 2004-03-08 Apparatus and method for plasma etching
US11/735,657 US7713756B2 (en) 2003-08-05 2007-04-16 Apparatus and method for plasma etching
US12/330,016 US20090095423A1 (en) 2003-08-05 2008-12-08 Apparatus and method for plasma etching
US12/434,877 US8083889B2 (en) 2003-08-05 2009-05-04 Apparatus and method for plasma etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003206042A JP4177192B2 (ja) 2003-08-05 2003-08-05 プラズマエッチング装置およびプラズマエッチング方法

Publications (3)

Publication Number Publication Date
JP2005056914A JP2005056914A (ja) 2005-03-03
JP2005056914A5 true JP2005056914A5 (ja) 2006-12-21
JP4177192B2 JP4177192B2 (ja) 2008-11-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003206042A Expired - Fee Related JP4177192B2 (ja) 2003-08-05 2003-08-05 プラズマエッチング装置およびプラズマエッチング方法

Country Status (2)

Country Link
US (4) US20050028934A1 (ja)
JP (1) JP4177192B2 (ja)

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US20080099450A1 (en) * 2006-10-30 2008-05-01 Applied Materials, Inc. Mask etch plasma reactor with backside optical sensors and multiple frequency control of etch distribution
US9218944B2 (en) 2006-10-30 2015-12-22 Applied Materials, Inc. Mask etch plasma reactor having an array of optical sensors viewing the workpiece backside and a tunable element controlled in response to the optical sensors
US20080110569A1 (en) * 2006-11-09 2008-05-15 Go Miya Plasma etching apparatus and plasma etching method
JP5034594B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
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KR101519024B1 (ko) * 2009-01-15 2015-05-12 삼성전자 주식회사 플라즈마 식각 장치의 가스공급장치
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JP6107327B2 (ja) * 2013-03-29 2017-04-05 東京エレクトロン株式会社 成膜装置及びガス供給装置並びに成膜方法
US10249511B2 (en) * 2014-06-27 2019-04-02 Lam Research Corporation Ceramic showerhead including central gas injector for tunable convective-diffusive gas flow in semiconductor substrate processing apparatus
CN105590825A (zh) * 2014-11-03 2016-05-18 中微半导体设备(上海)有限公司 气体输送装置及等离子体处理装置
CN106098525B (zh) * 2016-07-06 2018-01-30 武汉华星光电技术有限公司 干蚀刻设备
CN106653660B (zh) * 2017-01-25 2019-08-20 重庆京东方光电科技有限公司 一种气体流量控制装置及等离子体刻蚀设备
US11062897B2 (en) * 2017-06-09 2021-07-13 Lam Research Corporation Metal doped carbon based hard mask removal in semiconductor fabrication
CN111146063B (zh) * 2018-11-02 2022-04-08 江苏鲁汶仪器有限公司 一种等离子体反应腔进气系统
CN112951696B (zh) * 2019-12-10 2024-04-09 中微半导体设备(上海)股份有限公司 等离子体处理设备及其气体挡板结构、等离子体处理方法
CN114121585B (zh) * 2020-08-26 2023-10-31 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及气体供应方法
CN113205995B (zh) * 2021-05-08 2022-04-08 长鑫存储技术有限公司 气体分配装置、等离子体处理装置、方法及半导体结构

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