JP2005050875A - Ceramic package - Google Patents

Ceramic package Download PDF

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Publication number
JP2005050875A
JP2005050875A JP2003203403A JP2003203403A JP2005050875A JP 2005050875 A JP2005050875 A JP 2005050875A JP 2003203403 A JP2003203403 A JP 2003203403A JP 2003203403 A JP2003203403 A JP 2003203403A JP 2005050875 A JP2005050875 A JP 2005050875A
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Prior art keywords
substrate
ceramic package
sintered body
insulating substrate
alumina
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JP2003203403A
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JP4012861B2 (en
Inventor
Minako Izumi
美奈子 泉
Tomohide Hasegawa
智英 長谷川
Shigeki Yamada
成樹 山田
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]

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  • Compositions Of Oxide Ceramics (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a ceramic package which has a small dielectric loss and is hard to break after hermetic sealing, and to provide its manufacturing method. <P>SOLUTION: The ceramic package is provided with an insulating substrate which is provided with a substrate bottom 1a for mounting an electric element on a surface and a substrate embankment 1b which is collectively formed on the periphery of the substrate bottom 1a, and a metallized layer 2 which is arranged at the inside and/or on the surface of the insulating substrate. The insulating substrate is made of a sintered body which consists of sintered body of alumina nature which consists of sintered body wherein alumina is made main crystal phase, MnAl<SB>2</SB>O<SB>4</SB>crystal is contained in the grain boundary of the main crystal phase, and Mn<SB>2</SB>SiO<SB>4</SB>crystal is not contained substantially. In the sintered body of alumina nature, value of Im/Ia is 0.03-0.2 when diffraction strength of face (113) of α-Al<SB>2</SB>O<SB>3</SB>in X-ray diffraction is made Ia, and diffraction strength of face (311) of the MnAl<SB>2</SB>O<SB>4</SB>crystal is made Im. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明はセラミックパッケージとその製造方法に関し、携帯電話等の移動体通信機器の電気素子や半導体素子を搭載する。例えば水晶振動子、フィルタ、ダイプレクサ、デュプレクサ用等に用いられる。
【0002】
【従来技術】
近年、電子部品が高周波領域で使用されるに伴い、電気素子を搭載するセラミックパッケージの低誘電損失化が求められている。
【0003】
通常アルミナ質焼結体は1500℃以上で焼成することで緻密化されるが、これにマンガン酸化物を助剤として用いると、1200℃の低温でも焼結が可能となり、しかも金属導体との同時焼成を実現することができる。例えば下記特許文献1では、MnAlおよびMnSiOの2つの結晶を析出させることによってアルミナ質焼結体の曲げ強度向上を可能にしている。
【0004】
一方、同様にマンガン酸化物を添加し、低誘電損失化を達成した例が下記特許文献2に開示されている。これはアルミナのスラリーを、8Tという高磁場中に置いて、アルミナ結晶を特定の方向に配向させるという特殊な方法を用いており、60GHzにおける誘電損失を2×10−4以下と非常に小さい値を達成している。
【0005】
【特許文献1】
特開2001−097767号公報
【0006】
【特許文献2】
特開2002−121066号公報
【0007】
【発明が解決しようとする課題】
しかしながら、特許文献1に挙げられたアルミナ質焼結体には30GHzでの誘電損失が20〜33×10−4と大きいという問題があった。
【0008】
また、特許文献2に挙げられたアルミナ質焼結体は低誘電損失を実現するためには、スラリーに高磁場を印加するという高価で特殊なプロセスが必要であり、装置の大型化が困難なために工業的には実用的でないという問題があった。また焼成温度が1550℃と高温の上、還元雰囲気では焼結せず、金属導体を後付けしなければならないため、コストが上昇する問題があった。
【0009】
従って、本発明の目的は、通常の安価なプロセスで製造可能で、1MHz〜70GHzの高周波領域において低損失で、封止信頼性を有する小型・薄型のセラミックパッケージ及びその製造方法を提供することにある。
【0010】
【課題を解決するための手段】
本発明は、MnSiOが誘電損失を増大させている大きな要因であり、この結晶相を排除しつつ、粒界相にMnAlを結晶化させることによって高周波帯での誘電損失を小さくするという知見に基づくもので、これにより、高周波領域での誘電損失が小さいセラミックパッケージを実現することができる。
【0011】
即ち、本発明のセラミックパッケージは、電気素子が表面に実装される基板底部及び該基板底部の外周に一体的に設けられた基板堤部を具備する絶縁基板と、該絶縁基板の内部及び/又は表面に設けられたメタライズ層とを具備するセラミックパッケージにおいて、前記絶縁基板がアルミナを主結晶相とし、相対密度が94%以上であり、該主結晶相の平均粒径が1.0〜2.0μm、かつ該主結晶相の粒界にMnAl結晶を含み、実質的にMnSiO結晶を含まない焼結体から成り、X線回折におけるα−Alの(113)面の回折強度をIa、前記MnAl結晶の(311)面の回折強度をImとした場合、Im/Iaの値が0.03〜0.2であることを特徴とするものである。
【0012】
これにより、誘電正接が1MHzから70GHzの範囲で10×10−4以下であり、また、電気素子を実装し、基板堤部に金属蓋体を接着して気密封止後、温度85℃湿度85%の大気中に放置した時の耐久時間が100時間以上であるセラミックパッケージを実現できる。
【0013】
また、前記焼結体が、Mnを酸化物(Mn)換算で1〜8質量%、Siを酸化物換算で1〜6質量%の割合で含むことが、望ましい。この組成で焼結させることにより、粒界相でMnAl結晶が析出し、誘電損失を小さくすることができる。
【0014】
そして、前記絶縁基板の基板堤部の幅が0.1〜0.3mm、電気素子が実装される前記絶縁基板の基板底部の厚みが0.1〜0.3mm、パッケージ高さが0.3〜0.6mmであることが望ましい。これにより、温度85℃湿度85%大気中で100時間以上の耐久時間を有しながら、パッケージの小型化・低背化を実現できる。
【0015】
【発明の実施の形態】
本発明のセラミックパッケージを、図を用いて説明する。図1および図2は、本発明のセラミックパッケージの一例を示すもので、図1はセラミックパッケージの概略断面図であり、図2は内部に振動子等の電子部品や半導体素子等の電気素子を搭載し、蓋体によって蓋をしたセラミックパッケージの断面図である。
【0016】
セラミックパッケージは、アルミナ質焼結体からなり、基板底部1aと基板堤部1bとからなる絶縁基板1と、該基板表面に設けられたメタライズ層2とを具備する。
【0017】
絶縁基板1は、基板底部1aと基板堤部1bとからなり、基板堤部1aの外周に基板堤部1bが一体的に設けられてなるものである。また、メタライズ層2は、基板底部1aの表面に設けられた表面メタライズ層2aと、外部との電気接続のために裏面に設けられた裏面メタライズ層2bと、表面メタライズ層2a及び裏面メタライズ層2bを接続するために基板底部1aの内部に形成されたビアメタライズ層2cと、基板堤部1bの上に蓋体9を接合するために形成されたリング状導体2dから成っている。
【0018】
本発明のセラミックパッケージは、電子部品や半導体素子を内部に戴置し、蓋をして密封して用いるものであり、例えば図2に示すように、絶縁基板1の基板底部1aに設けられたメタライズ層2に対して電子部品3が、導電性接着剤4を用いて電気的に接続されている。電子部品3としては、水晶発振子、誘電体、抵抗体、フィルタ及びコンデンサのうち少なくとも1種を用いることができる。また、半導体素子5はワイヤボンディングによりメタライズ層2と接続されている。
【0019】
金属製蓋体9は、基板堤部1bの上面に被着形成されたリング状メタライズ層2dの表面に必要に応じ、メッキ層7を形成し、共晶Ag−Cuロウ材8等を用いて、シーム溶接等の方法により接合される。これにより電子部品3や半導体素子5は、空間10内に気密に封止される。
【0020】
本発明のセラミックパッケージによれば、 絶縁基板1が、アルミナを主結晶相とし、相対密度が94%以上、アルミナの平均結晶粒子径が1.0〜2.0μmである焼結体から成り、該焼結体における該主結晶相の粒界にMnAl結晶相を含み、実質的にMnSiO結晶を含まず、X線回折におけるα−Alの(113)面の回折強度をIa、前記MnAl結晶の(311)面の回折強度をImとした場合、Im/Iaの値が0.03〜0.2であることが重要である。
【0021】
相対密度が94%よりも低下すると、緻密化が進まず、誘電損失が増大するためであり、また、気密封止による残留応力に耐えられないためクラックを生じる。
【0022】
アルミナの平均結晶粒子径を1.0μm以上とすることで、応力腐食による粒界のクラック進行を抑制する。また、2.0μm以下とすることで粒内破壊を起こしにくくし、やはりクラックの進行を抑制することができる。アルミナ結晶の平均粒子径は特に、1.0〜1.8μm、さらには、1.0〜1.6μmであることが望ましい。
【0023】
さらに、MnSiO結晶が該主結晶相の粒界に存在すると、誘電損失が増加する。
【0024】
また、Im/Iaが0.03よりも小さくなると、焼結体中の非晶質量が増加し、誘電損失が上昇かつ、応力下でクラックが進行しやすくなる。Im/Iaが0.2よりも大きいと、MnAl結晶の析出が多くなり、焼結体の緻密化を阻害する。そのため、より低損失かつ耐応力腐食性のアルミナ質焼結体を得るためには、Im/Ia値は0.03〜0.18、さらには0.03〜0.15であることが望ましい。
【0025】
上記アルミナ質焼結体を用いてパッケージを作製すると、粒界の非晶質相が少ないために、気密封止時に生じる残留応力によって、応力腐食(引っ張りの残留応力によって弱くなった非晶質の結合をHOが切断、破壊する現象)が生じることを防止することができるために、高温高湿下での耐久性を高めることができる。その結果、具体的には、セラミックパッケージに電気素子を実装後、金属蓋体9によって気密に封止し、温度85%、湿度85%の大気中で100時間経過後も、絶縁基板にクラック等の発生がない、言い換えれば封止が維持されるという特性を有する。より高い封止信頼性を得るためには、耐久時間が500時間以上、さらには、1000時間以上であることが望ましい。
【0026】
前記焼結体は第2の成分として、Mnを酸化物(Mn)換算で1〜8質量%で含むことが好ましい。これは、Mn成分は焼結助剤として作用するものであり、このMn量を1質量%以上有することで、1200〜1500℃で焼結体が充分に緻密化され、また8質量%以下とすることでMnAlの過剰析出を防ぎ、焼結体を緻密化させる。従って、Mn量は、特に2〜8質量%、更には2〜7質量%が好ましい。
【0027】
また、第3の成分として、SiをSiO換算で1〜6質量%の割合で含有することが好ましい。SiO量を1質量%以上とすることで、焼結性に寄与する液相を充分に生成させ、緻密化を促す。また、6質量%以下とすることで、MnAlの結晶化を促すとともに、MnSiO結晶および非晶質相の生成を抑制し、誘電損失を減少させるとともに、応力腐食の影響を小さくする。そのため、SiO量は特に2〜6質量%、更には2〜5質量%が好ましい。
【0028】
さらに、所望により、第4の成分として、Mg,Ca,Sr,Baのうち少なくとも1種を配線導体との同時焼結性を高める上で酸化物換算で3質量%以下の割合で含んでもよい。そしてまた所望により、第5の成分として、W、Mo等の金属を焼結体を黒色化するための成分として2質量%以下の割合で含んでもよい。なお、本発明において焼結助剤とは上記第2〜5成分を意味する。
【0029】
上記セラミックパッケージを構成する上記アルミナ質焼結体に対するリング状メタライズ層2dの接着強度が49N以上、特に55N以上、さらには60N以上であることが好ましい。このように接着強度を49N以上にすることにより、封止後に蓋体9がリング状メタライズ層2dから剥離することを防止し、セラミックパッケージの気密性を充分に保つことができる。
【0030】
また、本発明によれば、上記アルミナ質焼結体を用いることによって、前記絶縁基板の基板堤部の幅が0.1〜0.3mm、電気素子が実装される前記絶縁基板の基板底部の厚みが0.1〜0.3mm、パッケージ高さが0.3〜0.6mmであり、かつ、温度85℃湿度85%大気中で100時間以上の耐久時間を有する小型・薄型の高信頼性のパッケージを実現できる。
【0031】
次に、本発明におけるアルミナ質焼結体から成る絶縁基板を具備するパッケージの製造方法について具体的に説明する。
【0032】
まず、原料粉末として平均粒子径が0.5〜2.5μm、特に1.0〜2.0μmのアルミナ粉末を準備する。これは、平均粒子径を0.5μm以上とすることにより、シート成形性を確保でき、粉末のコスト上昇を防ぐことができる。また、2.5μm以下とすることで、1500℃以下の焼成での緻密化を促進し、焼結を容易にすることができる。
【0033】
また、第2の成分として純度99%以上、平均粒子径0.7〜1.7μmのMn粉末を準備する。これは、平均粒子径を0.7μm以上とすることにより、シート成形性を確保でき、また1.7μm以下とすることで、Mn成分の分散を向上させ、MnAl結晶生成を促進しつつ、また、MnSiO結晶生成を抑制しながら焼結体の緻密化を促進することができる。
【0034】
さらに、第3の成分として純度99%以上、平均粒子径1〜3μmのSiO粉末を準備する。これは、平均粒子径を1μm以上とすることにより、SiOとMn化合物との反応性を制御し、MnSiO結晶生成を抑制することができ、3μm以下とすることで焼結体の緻密化を促進することができる。
【0035】
なお、上記のMn、及びSiは、上記の酸化物粉末以外に、焼成によって酸化物を形成し得る炭酸塩、硝酸塩、酢酸塩等として添加してもよい。
【0036】
これらの成分は、アルミナ粉末に対して、Mn粉末を1〜8質量%、特に2〜8質量%、更には2〜7質量%、SiO粉末を1〜6質量%、特に2〜6質量%、更には2〜5質量%の割合で添加することが、焼結性を高め、緻密化を促進するために好ましい。
【0037】
なお、所望により、第4の成分として、Mg,Ca,Sr,Baのうち少なくとも1種を酸化物換算で3質量%以下、第5の成分として、W、Mo等の遷移金属の金属粉末や酸化物粉末を着色成分として金属換算で2質量%以下の割合で添加してもよい。
【0038】
上記の混合粉末に対して適宜有機バインダを添加した後、これをプレス法、ドクターブレード法、圧延法、射出法等の周知の成形方法によって、グリーンシートを作製する。例えば、上記混合粉末に有機バインダや溶媒を添加してスラリーを調整した後、ドクターブレード法によってグリーンシートを形成する。或いはまた、混合粉末に有機バインダを加え、プレス成形、圧延成形等により所定の厚みのグリーンシートを作製できる。
【0039】
このとき、基板堤部および基板底部となるグリーンシートの厚みは、焼結後に0.1〜0.3mmとなるように調整する。
【0040】
所望により、グリーンシートに対して、マイクロドリル、レーザー等により直径50〜250μmのビアホールを形成することができる。
【0041】
このようにして作製したグリーンシートに対して、導体ペーストをスクリーン印刷、グラビア印刷等の方法により各グリーンシート上に配線パターン状、或いはリング状に印刷塗布するとともに、所望により、上記の導体ペーストをビアホール内に充填する。
【0042】
その後、導体ペーストを印刷塗布したグリーンシートを位置合わせして積層圧着し、この積層体を、最高温度1200〜1500℃の非酸化性雰囲気中で焼成する。
【0043】
このときの温度が1200℃以上とすることでパッケージを充分に緻密化させ、また、1500℃以下とすることで、アルミナの粒成長による粗大粒の生成を抑制し、また、メタライズ層の主成分となる金属自体の焼結を防ぐことで、アルミナとの接着強度を保持する。そのため焼成温度は、特に1300〜1400℃であることが好ましい。
【0044】
また、焼成雰囲気は、Mn成分および金属が酸化されないように、非酸化性雰囲気であることが望ましい。具体的には、窒素、又は窒素と水素との混合ガスを用いることが好ましい。有機バインダの脱脂をする上では、水素及び窒素を含み、露点+30℃以下、特に25℃以下の非酸化性雰囲気であることが望ましい。なお、雰囲気中には、所望により、アルゴン等の不活性ガスを混入してもよい。
【0045】
焼成後、リング状メタライズ層2dの表面には、Ni、Co、Cr、AuおよびCuのうち少なくとも1種から成るメッキ層を形成することが望ましい。
【0046】
このような方法で製造したセラミックパッケージは、メタライズ層との同時焼成が可能で、低誘電損失かつ応力化で破壊しにくいセラミックパッケージとして好適に用いることができる。
【0047】
なお、最終的には、絶縁基板1内部に電子部品3及び/又は半導体素子5を実装し、メタライズ層2との間を電気的に接続し、且つリング状に形成されたメタライズ層2dの表面にメッキ層7を被覆し、ロウ材8によって金属製蓋体9をシーム溶接等で接合することにより、電子部品3及び/又は半導体素子5が気密に封止された半導体装置を得ることができる。
【0048】
【実施例】
純度99%以上、平均粒子径1.2μmのアルミナ粉末に対して、純度99%以上、表1に示した平均粒子径のMn粉末、純度99%以上、表1に示した平均粒子径のSiO粉末、純度99%以上のMgCO粉末、CaCO粉末、SrCO粉末、BaCO粉末、純度99%以上、平均粒子径1.2μmのW粉末、純度99%以上、平均粒子径1.5μmのMo粉末を準備した。
【0049】
これらの原料粉末を表1に示す割合で混合した後、成形用有機樹脂(バインダ)としてアクリル系バインダと、トルエンを溶媒として混合してスラリーを調整し、しかる後に、ドクターブレード法にて所定厚みのグリーンシートを作製した。
【0050】
得られたグリーンシートを所定厚みに積層し、露点+25℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、1000℃から表1に示す焼成最高温度まで200℃/hで昇温し、それを焼成温度として露点+25℃の窒素水素混合雰囲気にて1時間焼成した後、1000℃までを200℃/hで冷却した。
【0051】
得られた焼結体の相対密度は、アルキメデス法によって測定した嵩密度と理論密度との比率から算出した。アルミナの平均結晶粒子径は、インターセプト法により測定した。また、焼結体を粉砕し、X線回折により主結晶相を同定し、Im/Iaの値を算出した。誘電損失は、1MHz、10GHz、70GHzで測定を行った。
【0052】
一方、平均粒子径1.5μmのMo粉末95質量%、平均粒子径1.2μmのアルミナ粉末5質量%を調製した後、アクリル系バインダとアセトンを溶媒として混合し、導体ペーストを調製した。
【0053】
そして、上記と同様にして作製したグリーンシートに対して、打ち抜き加工を施し、直径が100μmのビアホールを形成し、このビアホール内に、上記の導体ペーストをスクリーン印刷法によって充填するとともに、配線パターン状及びリング状に印刷塗布した。なお、リング状のメタライズ層を形成したグリーンシートは、電子部品を収納する部位を打ち抜き加工によって除去した。
【0054】
このようにして作製したグリーンシートを位置合わせし、積層圧着して積層体を作製した。この後、この積層成形体を露点+25℃の窒素水素混合雰囲気にて脱脂を行った後、露点+25℃の窒素水素混合雰囲気にて脱脂を行った後、引き続き、昇温速度200℃/hで1000℃から焼成最高温度まで昇温し、焼成最高温度にて露点+25℃の窒素水素混合雰囲気にて1時間焼成した後1000℃までを200℃/hで冷却した。
【0055】
これにより、基板堤部の幅が0.15mm、基板堤部の厚みが0.15mm、パッケージ高さが0.3mmのセラミックパッケージを得た。
【0056】
次に、絶縁基板表面のメタライズ層上に15μmの電解Niメッキを施し、さらにその表面に0.2μmのAuメッキを施した。メタライズ層に対して、共晶Ag−Cuロウ材を用いてFe−Ni−Co合金から成る厚み0.2mmの金属製蓋体をシーム溶接によって接合し、気密に封止した。
【0057】
得られた試料を温度85℃、湿度85%大気中に放置し、100時間ごとに1000時間まで取り出して40倍の顕微鏡にて絶縁基板の観察を行い、クラックが観察されなかった時間を耐久時間とした。例えば、500時間後にクラックが観察された場合、耐久時間は400時間と表す。結果を表2に示した。
【0058】
また、メタライズ強度は、焼成後2mm×20mmの大きさになるように導体ペーストをグリーンシートにスクリーン印刷し、上記と同様の方法で焼成した後、Niめっきを施し、これにFe−Ni−Coのリードピンを共晶Ag−Cuロウ材を用いて接着し、20mm/minの速度で垂直に引っ張り上げて剥離した時の荷重をメタライズ強度として評価した。
【0059】
【表1】

Figure 2005050875
【0060】
【表2】
Figure 2005050875
【0061】
表1、2の結果によれば、本発明の試料No.1は助剤量が多く過焼結し、粗大粒が生じるために気密封止後のパッケージは、温度85℃、湿度85%大気中での耐久時間は100時間に満たなかった。
【0062】
試料No.5は助剤量が少ないために緻密化が進まず、また、MnAl結晶の充分な析出がないため、Im/Iaの値が小さく、誘電損失は増大した。封止パッケージの耐久時間も100時間未満であり、メタライズ強度も低下した。
【0063】
試料No.6は焼結助剤がSiOのみのため、MnAl結晶が析出せず、また充分に緻密化しないために誘電損失の増大、100時間以内の破壊、およびメタライズ強度の低下が起こった。
【0064】
試料No.9は、助剤がMnのみのためMnAl結晶は多く析出したが、No.6と同様に緻密化が進まず、誘電率の増大と破壊、およびメタライズ強度低下が起こった。
【0065】
試料No.16は、焼成温度が低いために焼結が進まず、かつMnSiO結晶が生じるため、誘電損失の増大、およびパッケージの破壊が起こった。メタライズ強度も低下した。
【0066】
試料No.19は、焼成温度が高く過焼結するため破壊し、またMo自体が焼結するため、メタライズ強度が低下した。
【0067】
試料No.20は、Mnの平均粒径が小さいため、成形性が低下、また過焼結が起こり、破壊した。
【0068】
試料No.23は、Mnの平均粒径が大きく、Mnの分散性が低下するためにMnAlの結晶化が抑制されると同時にMnSiO結晶が析出し、誘電損失が増大した。
【0069】
No.24はSiOの平均粒径が小さいため、MnSiOの結晶化が促進され、誘電損失が増大した。
【0070】
そして、No.27はSiOの平均粒径が大きく、Siの分散性が低下するため、緻密化が充分にされず、誘電損失が増大し、またメタライズ強度も低下した。
【0071】
これに対し、その他の本発明の試料は、1MHz〜70GHzで誘電損失10×10−4以下を満足し、蓋体により気密封止されたパッケージは温度85℃、湿度85%大気中で500時間以上の耐久性を示した。また、50N以上のメタライズ強度が得られた。
【0072】
【発明の効果】
以上記述した通り、本発明によれば1MHz〜70GHzの高周波領域において低損失で、温度85℃湿度85%大気中でも優れた封止信頼性を有する小型・薄型のセラミックパッケージを提供することができる。
【図面の簡単な説明】
【図1】本発明のセラミックパッケージの一例を示す概略断面図である。
【図2】内部に電気素子を実装し、蓋体を接合した状態のセラミックパッケージの概略断面図である。
【符号の説明】
1・・・絶縁基板
1a・・・基板底部
1b・・・基板堤部
2・・・メタライズ層
2a・・・表面メタライズ層
2b・・・裏面メタライズ層
2c・・・ビアメタライズ層
2d・・・リング状メタライズ層
3・・・電子部品
4・・・導電性接着剤
5・・・半導体素子
6・・・ワイヤボンディング
7・・・メッキ層
8・・・ロウ材
9・・・金属製蓋体
10・・・気密空間
d・・・基板堤部の幅
D・・・基板底部の厚み
t・・・パッケージの高さ[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a ceramic package and a method for manufacturing the same, and includes an electric element or a semiconductor element of a mobile communication device such as a mobile phone. For example, it is used for a crystal resonator, a filter, a diplexer, a duplexer and the like.
[0002]
[Prior art]
In recent years, as electronic parts are used in a high frequency region, a reduction in dielectric loss of a ceramic package on which an electric element is mounted is required.
[0003]
Usually, an alumina sintered body is densified by firing at 1500 ° C. or higher. When manganese oxide is used as an auxiliary agent, sintering is possible at a low temperature of 1200 ° C., and at the same time with a metal conductor. Firing can be realized. For example, in the following Patent Document 1, it is possible to improve the bending strength of an alumina sintered body by precipitating two crystals of MnAl 2 O 4 and Mn 2 SiO 4 .
[0004]
On the other hand, an example in which manganese oxide is similarly added to achieve low dielectric loss is disclosed in Patent Document 2 below. This uses a special method in which the alumina slurry is placed in a high magnetic field of 8T and the alumina crystals are oriented in a specific direction, and the dielectric loss at 60 GHz is a very small value of 2 × 10 −4 or less. Has achieved.
[0005]
[Patent Document 1]
Japanese Patent Laid-Open No. 2001-097767
[Patent Document 2]
JP 2002-121066 A
[Problems to be solved by the invention]
However, the alumina sintered body described in Patent Document 1 has a problem that the dielectric loss at 30 GHz is as large as 20 to 33 × 10 −4 .
[0008]
Further, the alumina sintered body described in Patent Document 2 requires an expensive and special process of applying a high magnetic field to the slurry in order to realize low dielectric loss, and it is difficult to increase the size of the apparatus. Therefore, there was a problem that it was not practical in industry. Moreover, since the firing temperature is as high as 1550 ° C., the metal conductor has to be retrofitted without being sintered in a reducing atmosphere, and there is a problem that the cost increases.
[0009]
Accordingly, an object of the present invention is to provide a small and thin ceramic package which can be manufactured by a normal inexpensive process, has low loss in a high frequency region of 1 MHz to 70 GHz and has sealing reliability, and a method for manufacturing the same. is there.
[0010]
[Means for Solving the Problems]
The present invention is a major factor that increases the dielectric loss of Mn 2 SiO 4 , and eliminates this crystal phase while crystallizing MnAl 2 O 4 in the grain boundary phase to reduce the dielectric loss in the high frequency band. Based on the knowledge of reducing the size, a ceramic package having a low dielectric loss in a high frequency region can be realized.
[0011]
That is, the ceramic package of the present invention includes an insulating substrate including a substrate bottom portion on which an electrical element is mounted on the surface and a substrate bank portion integrally provided on the outer periphery of the substrate bottom, and the inside of the insulating substrate and / or In the ceramic package including the metallized layer provided on the surface, the insulating substrate has alumina as a main crystal phase, a relative density is 94% or more, and an average grain size of the main crystal phase is 1.0 to 2. (113) of α-Al 2 O 3 in X-ray diffraction, consisting of a sintered body having 0 μm and containing MnAl 2 O 4 crystals at the grain boundaries of the main crystal phase and substantially not containing Mn 2 SiO 4 crystals When the diffraction intensity of the surface is Ia and the diffraction intensity of the (311) plane of the MnAl 2 O 4 crystal is Im, the value of Im / Ia is 0.03 to 0.2. .
[0012]
As a result, the dielectric loss tangent is 10 × 10 −4 or less in the range of 1 MHz to 70 GHz, and after mounting the electric element, adhering the metal lid to the substrate bank portion and hermetically sealing, temperature 85 ° C. humidity 85 %, A ceramic package having a durability time of 100 hours or longer when left in the atmosphere can be realized.
[0013]
The sintered body preferably contains 1 to 8% by mass of Mn in terms of oxide (Mn 2 O 3 ) and 1 to 6% by mass in terms of oxide. By sintering with this composition, MnAl 2 O 4 crystals are precipitated in the grain boundary phase, and the dielectric loss can be reduced.
[0014]
And the width | variety of the board | substrate bank part of the said insulated substrate is 0.1-0.3 mm, the thickness of the board | substrate bottom part of the said insulated substrate in which an electrical element is mounted is 0.1-0.3 mm, and package height is 0.3. It is desirable to be -0.6 mm. As a result, the package can be reduced in size and height while having a durability time of 100 hours or more in the atmosphere of temperature 85 ° C. and humidity 85%.
[0015]
DETAILED DESCRIPTION OF THE INVENTION
The ceramic package of this invention is demonstrated using figures. 1 and 2 show an example of a ceramic package of the present invention. FIG. 1 is a schematic cross-sectional view of the ceramic package. FIG. 2 shows an electronic component such as a vibrator and an electric element such as a semiconductor element inside. It is sectional drawing of the ceramic package mounted and covered with the cover body.
[0016]
The ceramic package is made of an alumina sintered body, and includes an insulating substrate 1 including a substrate bottom portion 1a and a substrate bank portion 1b, and a metallized layer 2 provided on the substrate surface.
[0017]
The insulating substrate 1 includes a substrate bottom portion 1a and a substrate bank portion 1b, and the substrate bank portion 1b is integrally provided on the outer periphery of the substrate bank portion 1a. The metallized layer 2 includes a surface metallized layer 2a provided on the surface of the substrate bottom 1a, a back metallized layer 2b provided on the back for electrical connection with the outside, a front metallized layer 2a and a back metallized layer 2b. Are formed of a via metallized layer 2c formed inside the substrate bottom 1a and a ring-shaped conductor 2d formed for joining the lid 9 on the substrate bank 1b.
[0018]
The ceramic package of the present invention is used by placing electronic components and semiconductor elements inside, sealing them with a lid, and provided on the substrate bottom 1a of the insulating substrate 1, for example, as shown in FIG. An electronic component 3 is electrically connected to the metallized layer 2 using a conductive adhesive 4. As the electronic component 3, at least one of a crystal oscillator, a dielectric, a resistor, a filter, and a capacitor can be used. The semiconductor element 5 is connected to the metallized layer 2 by wire bonding.
[0019]
The metal lid 9 is formed by forming a plating layer 7 on the surface of the ring-shaped metallized layer 2d deposited on the upper surface of the substrate bank portion 1b, and using a eutectic Ag—Cu brazing material 8 or the like. And joined by a method such as seam welding. Thereby, the electronic component 3 and the semiconductor element 5 are hermetically sealed in the space 10.
[0020]
According to the ceramic package of the present invention, the insulating substrate 1 is made of a sintered body having alumina as a main crystal phase, a relative density of 94% or more, and an average crystal particle diameter of alumina of 1.0 to 2.0 μm, The grain boundary of the main crystal phase in the sintered body contains a MnAl 2 O 4 crystal phase, substantially does not contain a Mn 2 SiO 4 crystal, and the (113) plane of α-Al 2 O 3 in X-ray diffraction When the diffraction intensity is Ia and the diffraction intensity of the (311) plane of the MnAl 2 O 4 crystal is Im, it is important that the value of Im / Ia is 0.03 to 0.2.
[0021]
If the relative density is lower than 94%, densification does not progress and dielectric loss increases, and cracks are generated because it cannot withstand the residual stress due to hermetic sealing.
[0022]
By making the average crystal particle diameter of alumina 1.0 μm or more, the progress of cracks at grain boundaries due to stress corrosion is suppressed. Moreover, by making it 2.0 micrometer or less, it becomes difficult to raise | generate an intragranular fracture, and also progress of a crack can be suppressed. The average particle diameter of the alumina crystal is particularly preferably 1.0 to 1.8 μm, and more preferably 1.0 to 1.6 μm.
[0023]
Furthermore, when Mn 2 SiO 4 crystals are present at the grain boundaries of the main crystal phase, the dielectric loss increases.
[0024]
On the other hand, if Im / Ia is smaller than 0.03, the amount of amorphous material in the sintered body increases, the dielectric loss increases, and cracks easily progress under stress. When Im / Ia is larger than 0.2, precipitation of MnAl 2 O 4 crystals increases and densification of the sintered body is hindered. Therefore, in order to obtain a lower loss and stress corrosion resistant alumina sintered body, the Im / Ia value is preferably 0.03 to 0.18, more preferably 0.03 to 0.15.
[0025]
When a package is made using the above-mentioned alumina sintered body, since the amorphous phase at the grain boundary is small, the stress caused by the residual stress generated during hermetic sealing (amorphous weakened by the tensile residual stress) It is possible to prevent the occurrence of the phenomenon that H 2 O breaks and breaks the bond), and therefore, durability at high temperature and high humidity can be improved. As a result, after mounting the electric element on the ceramic package, it is hermetically sealed by the metal lid 9, and cracks are generated on the insulating substrate even after 100 hours in the atmosphere of temperature 85% and humidity 85%. In other words, there is a characteristic that sealing is maintained. In order to obtain higher sealing reliability, it is desirable that the durability time is 500 hours or longer, and further 1000 hours or longer.
[0026]
The sintered body preferably contains 1 to 8% by mass of Mn as the second component in terms of oxide (Mn 2 O 3 ). This is because the Mn component acts as a sintering aid, and by having 1% by mass or more of this Mn 2 O 3 amount, the sintered body is sufficiently densified at 1200 to 1500 ° C., and 8 masses. % Or less prevents excessive precipitation of MnAl 2 O 4 and densifies the sintered body. Therefore, the amount of Mn is particularly preferably 2 to 8% by mass, and more preferably 2 to 7% by mass.
[0027]
Further, as a third component, it is preferably contained in a proportion of 1-6 wt% of Si in terms of SiO 2. By setting the amount of SiO 2 to 1% by mass or more, a liquid phase that contributes to sinterability is sufficiently generated and densification is promoted. In addition, by setting the content to 6% by mass or less, crystallization of MnAl 2 O 4 is promoted, generation of Mn 2 SiO 4 crystals and an amorphous phase is suppressed, dielectric loss is reduced, and stress corrosion is affected. Make it smaller. Therefore, the amount of SiO 2 is particularly preferably 2 to 6% by mass, and more preferably 2 to 5% by mass.
[0028]
Furthermore, if desired, as a fourth component, at least one of Mg, Ca, Sr, and Ba may be included in a proportion of 3% by mass or less in terms of oxide in order to enhance the simultaneous sintering property with the wiring conductor. . If desired, a metal such as W or Mo may be included as a fifth component in a proportion of 2% by mass or less as a component for blackening the sintered body. In the present invention, the sintering aid means the second to fifth components.
[0029]
The adhesive strength of the ring-shaped metallized layer 2d with respect to the alumina sintered body constituting the ceramic package is preferably 49N or more, particularly 55N or more, and more preferably 60N or more. Thus, by setting the adhesive strength to 49 N or more, it is possible to prevent the lid body 9 from being peeled off from the ring-shaped metallized layer 2d after sealing, and to sufficiently maintain the airtightness of the ceramic package.
[0030]
Further, according to the present invention, by using the above-mentioned alumina sintered body, the width of the substrate bank portion of the insulating substrate is 0.1 to 0.3 mm, and the bottom of the substrate of the insulating substrate on which the electric element is mounted. Compact and thin high reliability with a thickness of 0.1 to 0.3 mm, package height of 0.3 to 0.6 mm, and a durability of 100 hours or more in air at a temperature of 85 ° C and a humidity of 85% Can be realized.
[0031]
Next, the manufacturing method of the package which comprises the insulating substrate which consists of an alumina sintered compact in this invention is demonstrated concretely.
[0032]
First, an alumina powder having an average particle size of 0.5 to 2.5 μm, particularly 1.0 to 2.0 μm is prepared as a raw material powder. By setting the average particle size to 0.5 μm or more, the sheet formability can be secured and the cost of the powder can be prevented from increasing. Moreover, by setting it as 2.5 micrometers or less, the densification by baking at 1500 degrees C or less can be accelerated | stimulated, and sintering can be made easy.
[0033]
Also, a Mn 2 O 3 powder having a purity of 99% or more and an average particle size of 0.7 to 1.7 μm is prepared as the second component. This is because the sheet formability can be secured by setting the average particle size to 0.7 μm or more, and by setting the average particle size to 1.7 μm or less, the dispersion of the Mn component is improved, and the MnAl 2 O 4 crystal generation is promoted. In addition, densification of the sintered body can be promoted while suppressing Mn 2 SiO 4 crystal formation.
[0034]
Further, a SiO 2 powder having a purity of 99% or more and an average particle diameter of 1 to 3 μm is prepared as a third component. This can control the reactivity of SiO 2 and the Mn compound by setting the average particle size to 1 μm or more, and can suppress the formation of Mn 2 SiO 4 crystals, and the sintered body can be controlled to 3 μm or less. Densification can be promoted.
[0035]
In addition, you may add said Mn and Si as carbonate, nitrate, acetate etc. which can form an oxide by baking other than said oxide powder.
[0036]
These components are 1 to 8% by mass of Mn 2 O 3 powder, particularly 2 to 8% by mass, more preferably 2 to 7% by mass, and 1 to 6% by mass of SiO 2 powder, especially 2% with respect to the alumina powder. It is preferable to add at a ratio of ˜6 mass%, further 2 to 5 mass% in order to enhance the sinterability and promote densification.
[0037]
If desired, as a fourth component, at least one of Mg, Ca, Sr, and Ba is 3% by mass or less in terms of oxide, and as a fifth component, a metal powder of a transition metal such as W or Mo, Oxide powder may be added as a coloring component at a ratio of 2% by mass or less in terms of metal.
[0038]
An organic binder is appropriately added to the mixed powder, and then a green sheet is produced by a known forming method such as a press method, a doctor blade method, a rolling method, and an injection method. For example, an organic binder or a solvent is added to the mixed powder to prepare a slurry, and then a green sheet is formed by a doctor blade method. Alternatively, an organic binder is added to the mixed powder, and a green sheet having a predetermined thickness can be produced by press molding, rolling molding, or the like.
[0039]
At this time, the thickness of the green sheet which becomes a board | substrate bank part and a board | substrate bottom part is adjusted so that it may become 0.1-0.3 mm after sintering.
[0040]
If desired, a via hole having a diameter of 50 to 250 μm can be formed on the green sheet by a micro drill, a laser, or the like.
[0041]
A conductive paste is printed and applied in a wiring pattern shape or ring shape on each green sheet by a method such as screen printing or gravure printing on the green sheet thus produced, and if desired, the above conductive paste is applied. Fill the via hole.
[0042]
Thereafter, the green sheet on which the conductor paste is printed is aligned and pressure-bonded, and the laminate is fired in a non-oxidizing atmosphere at a maximum temperature of 1200 to 1500 ° C.
[0043]
When the temperature at this time is 1200 ° C. or higher, the package is sufficiently densified, and when it is 1500 ° C. or lower, the formation of coarse grains due to the grain growth of alumina is suppressed, and the main component of the metallized layer By preventing sintering of the metal itself, the adhesive strength with alumina is maintained. Therefore, the firing temperature is particularly preferably 1300 to 1400 ° C.
[0044]
The firing atmosphere is preferably a non-oxidizing atmosphere so that the Mn component and the metal are not oxidized. Specifically, it is preferable to use nitrogen or a mixed gas of nitrogen and hydrogen. In degreasing the organic binder, a non-oxidizing atmosphere containing hydrogen and nitrogen and having a dew point of + 30 ° C. or lower, particularly 25 ° C. or lower is desirable. Note that an inert gas such as argon may be mixed in the atmosphere as desired.
[0045]
After firing, it is desirable to form a plating layer made of at least one of Ni, Co, Cr, Au and Cu on the surface of the ring-shaped metallized layer 2d.
[0046]
The ceramic package manufactured by such a method can be fired simultaneously with the metallized layer, and can be suitably used as a ceramic package that is low in dielectric loss and hardly broken by stress.
[0047]
Finally, the electronic component 3 and / or the semiconductor element 5 are mounted inside the insulating substrate 1, electrically connected to the metallized layer 2, and the surface of the metallized layer 2d formed in a ring shape. A semiconductor device in which the electronic component 3 and / or the semiconductor element 5 are hermetically sealed can be obtained by covering the plating layer 7 and joining the metal lid 9 with the brazing material 8 by seam welding or the like. .
[0048]
【Example】
Purity 99% or more, Mn 2 O 3 powder having the average particle diameter shown in Table 1, purity 99% or more, average particle shown in Table 1 with respect to alumina powder having purity 99% or more and average particle diameter 1.2 μm Diameter SiO 2 powder, MgCO 3 powder with a purity of 99% or more, CaCO 3 powder, SrCO 3 powder, BaCO 3 powder, purity of 99% or more, W powder with an average particle diameter of 1.2 μm, purity of 99% or more, average particle diameter A 1.5 μm Mo powder was prepared.
[0049]
After mixing these raw material powders in the ratio shown in Table 1, an acrylic binder as a molding organic resin (binder) and toluene are mixed as a solvent to prepare a slurry, and then a predetermined thickness is obtained by a doctor blade method. A green sheet was prepared.
[0050]
After laminating the obtained green sheets to a predetermined thickness and degreasing in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C, the temperature was continuously raised from 1000 ° C to the firing maximum temperature shown in Table 1 at 200 ° C / h, It was fired for 1 hour in a nitrogen-hydrogen mixed atmosphere having a dew point of + 25 ° C. as a firing temperature, and then cooled to 1000 ° C. at 200 ° C./h.
[0051]
The relative density of the obtained sintered body was calculated from the ratio between the bulk density and the theoretical density measured by the Archimedes method. The average crystal particle size of alumina was measured by the intercept method. Further, the sintered body was pulverized, the main crystal phase was identified by X-ray diffraction, and the value of Im / Ia was calculated. Dielectric loss was measured at 1 MHz, 10 GHz, and 70 GHz.
[0052]
On the other hand, after preparing 95% by mass of Mo powder having an average particle size of 1.5 μm and 5% by mass of alumina powder having an average particle size of 1.2 μm, an acrylic binder and acetone were mixed as a solvent to prepare a conductor paste.
[0053]
The green sheet produced in the same manner as above is punched to form a via hole having a diameter of 100 μm, and the via paste is filled in the via hole by a screen printing method. And it was printed and applied in a ring shape. Note that the green sheet on which the ring-shaped metallized layer was formed was removed by punching the part that houses the electronic component.
[0054]
The green sheets thus produced were aligned and laminated and pressed to produce a laminate. Thereafter, this laminated molded body was degreased in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C., then degreased in a nitrogen-hydrogen mixed atmosphere at a dew point of + 25 ° C., and then at a temperature rising rate of 200 ° C./h. The temperature was raised from 1000 ° C. to the highest firing temperature, and fired in a nitrogen-hydrogen mixed atmosphere having a dew point of 25 ° C. at the highest firing temperature, and then cooled to 1000 ° C. at 200 ° C./h.
[0055]
As a result, a ceramic package having a substrate bank portion width of 0.15 mm, a substrate bank portion thickness of 0.15 mm, and a package height of 0.3 mm was obtained.
[0056]
Next, 15 μm electrolytic Ni plating was applied to the metallized layer on the surface of the insulating substrate, and 0.2 μm Au plating was further applied to the surface. A metal lid having a thickness of 0.2 mm made of an Fe—Ni—Co alloy was joined to the metallized layer by seam welding using a eutectic Ag—Cu brazing material, and hermetically sealed.
[0057]
The obtained sample was left in the atmosphere at a temperature of 85 ° C. and a humidity of 85%, taken out every 100 hours up to 1000 hours, and the insulating substrate was observed with a 40 × microscope. It was. For example, when a crack is observed after 500 hours, the durability time is expressed as 400 hours. The results are shown in Table 2.
[0058]
Also, the metallized strength is obtained by screen-printing a conductor paste on a green sheet so as to have a size of 2 mm × 20 mm after firing, firing by the same method as described above, and then applying Ni plating to the Fe—Ni—Co. The lead pins were bonded using a eutectic Ag-Cu brazing material, and the load when the lead pins were pulled vertically and peeled off at a speed of 20 mm / min was evaluated as the metallization strength.
[0059]
[Table 1]
Figure 2005050875
[0060]
[Table 2]
Figure 2005050875
[0061]
According to the results in Tables 1 and 2, the sample No. No. 1 was oversintered with a large amount of auxiliary agent, and coarse particles were generated. Therefore, the package after hermetic sealing had a durability of less than 100 hours in the atmosphere at a temperature of 85 ° C. and a humidity of 85%.
[0062]
Sample No. In No. 5, since the amount of the auxiliary agent is small, densification does not proceed, and since there is not sufficient precipitation of MnAl 2 O 4 crystals, the value of Im / Ia is small and the dielectric loss is increased. The durability time of the sealed package was also less than 100 hours, and the metallized strength was also lowered.
[0063]
Sample No. In No. 6, since the sintering aid was only SiO 2 , MnAl 2 O 4 crystals did not precipitate, and because it was not sufficiently densified, dielectric loss increased, destruction within 100 hours, and metallized strength decreased. .
[0064]
Sample No. No. 9 had a lot of MnAl 2 O 4 crystals because the auxiliary was only Mn 2 O 3 . As in the case of No. 6, densification did not progress, and the dielectric constant increased and destroyed, and the metallized strength decreased.
[0065]
Sample No. In No. 16, sintering did not proceed because the firing temperature was low, and Mn 2 SiO 4 crystals were generated, resulting in increased dielectric loss and package breakdown. The metallized strength also decreased.
[0066]
Sample No. No. 19 was destroyed because the sintering temperature was high and oversintered, and Mo itself was sintered, so that the metallized strength was lowered.
[0067]
Sample No. No. 20 has a small average particle size of Mn 2 O 3 , so that the moldability is lowered and oversintering occurs and breaks.
[0068]
Sample No. No. 23 has a large average particle diameter of Mn 2 O 3 , and MnAl 2 O 4 crystallization is suppressed because Mn dispersibility is lowered, and at the same time, Mn 2 SiO 4 crystals are precipitated and dielectric loss is increased. .
[0069]
No. In No. 24, since the average particle diameter of SiO 2 was small, crystallization of Mn 2 SiO 4 was promoted, and the dielectric loss increased.
[0070]
And No. In No. 27, the average particle diameter of SiO 2 was large and the dispersibility of Si was lowered, so that the densification was not sufficient, the dielectric loss was increased, and the metallized strength was also lowered.
[0071]
On the other hand, other samples of the present invention satisfy a dielectric loss of 10 × 10 −4 or less at 1 MHz to 70 GHz, and the package hermetically sealed by the lid body has a temperature of 85 ° C. and a humidity of 85% for 500 hours in the atmosphere. The above durability was exhibited. A metallization strength of 50 N or more was obtained.
[0072]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a small and thin ceramic package having low loss in a high frequency region of 1 MHz to 70 GHz and excellent sealing reliability even in a temperature of 85 ° C. and humidity of 85%.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view showing an example of a ceramic package of the present invention.
FIG. 2 is a schematic cross-sectional view of a ceramic package in a state where an electric element is mounted inside and a lid is joined.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Insulating substrate 1a ... Substrate bottom part 1b ... Substrate bank part 2 ... Metallization layer 2a ... Front surface metallization layer 2b ... Back surface metallization layer 2c ... Via metallization layer 2d ... Ring-shaped metallized layer 3 ... electronic component 4 ... conductive adhesive 5 ... semiconductor element 6 ... wire bonding 7 ... plating layer 8 ... brazing material 9 ... metal lid 10: Airtight space d: Width of substrate bank D: Thickness t of substrate bottom: Height of package

Claims (5)

電気素子が表面に実装される基板底部及び該基板底部の外周に一体的に設けられた基板堤部を具備する絶縁基板と、該絶縁基板の内部及び/又は表面に設けられたメタライズ層と、を具備するセラミックパッケージにおいて、前記絶縁基板がアルミナを主結晶相とし、相対密度が94%以上、該主結晶相の平均粒径が1.0〜2.0μm、かつ該主結晶相の粒界にMnAl結晶を含み、実質的にMnSiO結晶を含まない焼結体から成り、X線回折におけるα−Alの(113)面の回折強度をIa、前記MnAl結晶の(311)面の回折強度をImとした時、Im/Iaの値が0.03〜0.2であることを特徴とするセラミックパッケージ。An insulating substrate comprising a substrate bottom portion on which the electrical element is mounted and a substrate bank portion integrally provided on the outer periphery of the substrate bottom; and a metallization layer provided inside and / or on the surface of the insulating substrate; And the insulating substrate has alumina as a main crystal phase, a relative density of 94% or more, an average grain size of the main crystal phase of 1.0 to 2.0 μm, and a grain boundary of the main crystal phase comprises MnAl 2 O 4 crystals, substantially Mn 2 consists SiO 4 sintered body containing no crystalline, the diffraction intensity of the (113) plane of α-Al 2 O 3 in the X-ray diffraction Ia, wherein MnAl 2 A ceramic package, wherein the value of Im / Ia is 0.03 to 0.2 when the diffraction intensity of the (311) plane of O 4 crystal is Im. 誘電正接が1MHzから70GHzの範囲で10×10−4以下であることを特徴とするアルミナ質焼結体から成る請求項1に記載のセラミックパッケージ。2. The ceramic package according to claim 1, wherein the dielectric tangent is 10 × 10 −4 or less in the range of 1 MHz to 70 GHz. 前記絶縁基板の基板堤部の幅が0.1〜0.3mm、電気素子が実装される前記絶縁基板の基板底部の厚みが0.1〜0.3mm、パッケージ高さが0.3〜0.6mmであることを特徴とする請求項1または2いずれかに記載のセラミックパッケージ。The width of the substrate bank portion of the insulating substrate is 0.1 to 0.3 mm, the thickness of the substrate bottom portion of the insulating substrate on which the electric element is mounted is 0.1 to 0.3 mm, and the package height is 0.3 to 0. 3. The ceramic package according to claim 1, wherein the ceramic package is 6 mm. 前記電気素子を実装し、前記基板堤部に金属製蓋体を接着して気密封止後、温度85℃、湿度85%の大気中に放置した時の耐久時間が100時間以上であることを特徴とする請求項3に記載のセラミックパッケージ。After the electrical element is mounted, a metal lid is bonded to the substrate bank portion and hermetically sealed, and then left in an atmosphere having a temperature of 85 ° C. and a humidity of 85%, the durability time is 100 hours or more. The ceramic package according to claim 3. 前記焼結体が、Mnを酸化物(Mn)換算で1〜8質量%、Siを酸化物換算で1〜6質量%の割合で含むことを特徴とする請求項1乃至4に記載のセラミックパッケージ。The sintered body contains Mn in a proportion of 1 to 8% by mass in terms of oxide (Mn 2 O 3 ) and Si in a proportion of 1 to 6% by mass in terms of oxide. The ceramic package described.
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