JP2005045118A5 - - Google Patents

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Publication number
JP2005045118A5
JP2005045118A5 JP2003279228A JP2003279228A JP2005045118A5 JP 2005045118 A5 JP2005045118 A5 JP 2005045118A5 JP 2003279228 A JP2003279228 A JP 2003279228A JP 2003279228 A JP2003279228 A JP 2003279228A JP 2005045118 A5 JP2005045118 A5 JP 2005045118A5
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Japan
Prior art keywords
capacitor element
electrolytic capacitor
solid electrolytic
semiconductor layer
element according
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JP2003279228A
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Japanese (ja)
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JP4367752B2 (en
JP2005045118A (en
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Priority to JP2003279228A priority Critical patent/JP4367752B2/en
Priority claimed from JP2003279228A external-priority patent/JP4367752B2/en
Publication of JP2005045118A publication Critical patent/JP2005045118A/en
Publication of JP2005045118A5 publication Critical patent/JP2005045118A5/ja
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Publication of JP4367752B2 publication Critical patent/JP4367752B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (6)

弁作用金属、弁作用金属を主成分とする合金、弁作用金属の導電性酸化物及びこれら2種以上の混合物から選ばれる少なくとも1種を含む材料からなる陽極体、前記陽極体の電解酸化(化成)により形成される酸化物を主成分とする誘電体層、前記誘電体層上に形成される半導体層及び前記半導体層上に積層した導電体層を有する固体電解コンデンサ素子の製造方法において、前記半導体層を化成電圧より高い電圧による通電手法により形成することを特徴とする固体電解コンデンサ素子の製造方法。   An anode body made of a material containing at least one selected from a valve action metal, an alloy containing the valve action metal as a main component, a conductive oxide of the valve action metal, and a mixture of two or more thereof, and electrolytic oxidation of the anode body ( In a method for manufacturing a solid electrolytic capacitor element having a dielectric layer mainly composed of an oxide formed by chemical conversion), a semiconductor layer formed on the dielectric layer, and a conductor layer laminated on the semiconductor layer, A method for producing a solid electrolytic capacitor element, wherein the semiconductor layer is formed by an energization technique using a voltage higher than a formation voltage. 通電手法による半導体層の形成が複数回行われる請求項1に記載の固体電解コンデンサ素子の製造方法。   The method for producing a solid electrolytic capacitor element according to claim 1, wherein the semiconductor layer is formed a plurality of times by an energization technique. 弁作用金属が、アルミニウム、タンタル、チタン及びニオブから選択される請求項1に記載の固体電解コンデンサ素子の製造方法。   The method for producing a solid electrolytic capacitor element according to claim 1, wherein the valve metal is selected from aluminum, tantalum, titanium, and niobium. 請求項1の方法で作製された固体電解コンデンサ素子。   A solid electrolytic capacitor element produced by the method according to claim 1. 請求項4に記載された固体電解コンデンサ素子を使用した電子回路。   An electronic circuit using the solid electrolytic capacitor element according to claim 4. 請求項4に記載された固体電解コンデンサ素子を使用した電子機器。   An electronic device using the solid electrolytic capacitor element according to claim 4.
JP2003279228A 2003-07-24 2003-07-24 Method for manufacturing solid electrolytic capacitor element Expired - Fee Related JP4367752B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003279228A JP4367752B2 (en) 2003-07-24 2003-07-24 Method for manufacturing solid electrolytic capacitor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003279228A JP4367752B2 (en) 2003-07-24 2003-07-24 Method for manufacturing solid electrolytic capacitor element

Publications (3)

Publication Number Publication Date
JP2005045118A JP2005045118A (en) 2005-02-17
JP2005045118A5 true JP2005045118A5 (en) 2006-08-31
JP4367752B2 JP4367752B2 (en) 2009-11-18

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Family Applications (1)

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JP2003279228A Expired - Fee Related JP4367752B2 (en) 2003-07-24 2003-07-24 Method for manufacturing solid electrolytic capacitor element

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JP (1) JP4367752B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4785122B2 (en) * 2005-11-17 2011-10-05 テイカ株式会社 Oxidizing agent / dopant for conductive polymer, conductive composition, solid electrolytic capacitor and production method thereof.

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