JP2005026512A

JP2005026512A - Substrate processing apparatus

Info

Publication number: JP2005026512A
Application number: JP2003191175A
Authority: JP
Inventors: Hideaki Sakurai; 秀昭桜井; Masamitsu Ito; 正光伊藤
Original assignee: Toshiba Corp
Current assignee: Toshiba Corp
Priority date: 2003-07-03
Filing date: 2003-07-03
Publication date: 2005-01-27
Anticipated expiration: 2023-07-03
Also published as: JP4189279B2

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing apparatus for suppressing occurrence of defects due to chemical fluid processing during processing applying the chemical fluid processing to a substrate by suctioning chemical fluid while ejecting the chemical fluid on the substrate. <P>SOLUTION: The substrate processing apparatus is provided with a chemical ejecting / suctioning section 20 including a chemical ejecting nozzle 21 for ejecting the chemical fluid supplied from a chemical fluid inlet opening 21a from a chemical fluid ejecting outlet 21b opposed to the substrate, a rinse fluid ejecting nozzle 23 for ejecting rinse fluid supplied from a rinse fluid inlet 23a from a rinse fluid ejecting outlet 23b opposed to the substrate, and first and second solution suctioning nozzles 24, 25 for suctioning solution on the substrate from suctioning ports 24b, 25b opposed to the substrate; a mobile mechanism for relatively and horizontally moving the chemical ejecting / suctioning section 20 and the substrate; and a relatively scanning mechanism while keeping the distance between the chemical ejecting / suctioning section and a principal face of the substrate nearly constant. The rinse fluid ejecting nozzle 23 has part whose cross sectional area is smaller at a position of the nozzle 23 closer to the rinse fluid ejecting outlet 23b. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、半導体（ウエハ工程、露光用マスク製造工程）、液晶デバイス作成技術における薬液処理方法（特に現像、エッチング、洗浄）に使用される基板処理装置に関する。
【０００２】
【従来の技術】
半導体デバイスや液晶ディスプレーの製造工程における基板の加工技術には広くウエットプロセスが用いられている。特に感光性樹脂を感光させた後の現像処理においては、パドル法が積極的に検討されている。従来のパドル法では基板を回転させながら、基板上方に配置した薬液供給部より薬液を供給していたものの、基板の中心部と周辺部で薬液の吐出圧力や単位面積あたりの薬液供給量をそろえる事は非常に困難であり、面内で均一の加工精度を得ることは非常に困難となってきている。又、現像が進行するに従いその副産物として溶解生成物や濃度の低い現像液が発生する。
【０００３】
一般に溶解生成物や濃度の薄くなった現像液は感光性薄膜の溶解を阻害する効果があると考えられており、それらが基板内のパターン疎密に応じて生じるので分布を持って生じてしまう。その後基板回転による遠心力等の力を受け基板上を不均一に動き回るため、従来のパドル法では面内で均一の加工精度を得ることができなくなってきている。現像途中に薬液流動を起こさせるため吸引ノズルを使った処理方法も提案されている。
【０００４】
特許文献１では、現像液吐出口及び現像液吸引口を備えたノズルの提案、及びそのノズルを用いた基板処理方法が提案されている。これは薬液吐出口から薬液を吐出し、溶液吸引口から薬液を吸引する機能を有するノズルを基板に近接させて基板を処理する方法に関するものであり、パターン疎密によるパターン寸法差をなくさせるものである。このような薬液処理を行うと現像が進行するにつれ感光性薄膜等の有機物残渣が基板表面に付着する場合が考えられる。それら残渣は現像後のエッチング前には除去されていないとエッチング加工を行った場合に欠陥となるので、現像中、あるいは現像後の段階で除去されている状態が望ましい。
【０００５】
しかし基板表面に付着した有機物残渣は非常に強い力で基板に付着しており、それらを除去するには吸引口を具備したノズルによる吸引力だけでは効率的に除去させることは困難であり、ひいては欠陥を生じる原因となっていた。
【０００６】
又、上記特許文献１に示したような現像処理を繰り返し行った際にはノズル下面が上記有機物残渣等の付着により汚染され、ひいてはその残渣が処理中になんらかの力により処理液中に流れでて、その後基板上に付着してしまいそれが欠陥となるという問題もあった。ノズル下面に有機物等の異物が付着しないようにするための方法も検討されなければならない問題となっていた。
【０００７】
また、上記装置では、現像液吐出口と現像液吸引口とを挟むようにリンス液吐出口が形成されていた。この構造では、走査方向に対して側面から基板上の現像液部分に泡が混入する事があった。現像液に泡が混入することにより現像が均一に行われず、欠陥が発生することがある。
【０００８】
【特許文献１】
特開２０００−３８８３５７号公報
【０００９】
【発明が解決しようとする課題】
上述したように、現像により発生した現像副産物等が基板表面及び／又はスキャンノズル下面に付着して、欠陥の原因となると言う問題があった。
【００１０】
また、基板上の現像液に泡が混入して、現像が均一に行われず、欠陥が発生するという問題があった。
【００１１】
本発明の目的は、基板上に薬液を吐出しつつ、薬液を吸引して、基板に対して薬液処理を行う基板処理装置において、薬液処理による欠陥の発生を抑制し得る基板処理装置を提供することにある。
【００１２】
【課題を解決するための手段】
本発明は、上記目的を達成するために以下のように構成されている。
【００１３】
（１）本発明の一例に係わる基板処理装置は、基板を略水平に保持する基板保持機構と、第１の薬液流入開口から供給された第１の薬液を前記基板に対向する第１の薬液吐出開口から吐出する第１の薬液吐出ノズルと，第２の薬液流入開口から供給された第２の薬液を前記基板に対向する第２の薬液吐出開口から吐出する第２の薬液吐出ノズルと，第３の薬液流入開口から供給された第３の薬液を前記基板に対向する第３の薬液吐出開口から吐出する第３の薬液吐出ノズルと，前記基板に対向する第１の吸引開口から前記基板上の溶液を吸引する第１の溶液吸引ノズルと，前記基板に対向する第２の吸引開口から前記基板上の溶液を吸引する第２の溶液吸引ノズルとを具備する薬液吐出／吸引部と、前記薬液吐出／吸引部と前記基板とを相対的に水平移動させる移動機構と、前記薬液吐出／吸引部と前記基板主面との距離を略一定に保つ機構とを具備し、前記基板に対する前記薬液吐出／吸引部の移動方向前方側から、第２の薬液吐出開口、第１の吸引開口、前記第１の薬液吐出開口、前記第２の吸引開口、第３の薬液吐出開口の順番に配置され、前記薬液吐出／吸引部は、第２の薬液吐出開口と第１の溶液吸引開口との間、第１の溶液吸引開口と第１の溶液吸引開口との間、第１の溶液吸引開口と第２の溶液吸引開口との間、第２の溶液吸引開口と第３の溶液吸引開口との間の何れか一つ以上の間に設けられ、下面が前記基板主面と対向する面に設けられた部材を更に具備し、前記第２及び／又は第３の薬液吐出ノズルは、前記第２及び／又は第３の薬液吐出開口に近づくにつれて、開口の面積が小さくなっている部分を有することを特徴とする。
【００１４】
（２）本発明の一例に係わる基板処理装置は、基板を略水平に保持する基板保持機構と、薬液流入開口から供給された薬液を前記基板に対向する薬液吐出開口から吐出する薬液吐出ノズルと、前記基板に対向し、前記薬液吐出開口を挟むように配置された第１及び第２の吸引開口から前記基板上の溶液を吸引する第１及び第２の溶液吸引ノズルと、前記薬液吐出開口と二つの溶液吸引開口との間にそれぞれ設けられ、下面が前記基板主面と対向する面に設けられた部材とを具備する薬液吐出／吸引部と、前記薬液吐出／吸引部と前記基板とを相対的に水平移動させる移動機構と、前記薬液吐出／吸引部と基板主面との距離を略一定に保つ機構とを具備し、前記薬液吐出／吸引部の相対的な移動方向前方側から、第１の溶液吸引開口、前記薬液吐出開口、前記第２の溶液吸引開口の順番に配置され、前記第１の薬液吐出ノズルは、前記薬液吐出開口に近づくにつれて、開口の面積が小さくなっている部分を有することを特徴とする。
【００１５】
（３）本発明の一例に係わる基板処理装置は、基板を略水平に保持する基板保持機構と、第１の薬液流入開口から供給された第１の薬液を前記基板に対向する薬液吐出開口から吐出する第１の薬液吐出ノズルと，第２の薬液流入開口から供給された第２の薬液を前記基板に対向する薬液吐出開口から吐出する第２の薬液吐出ノズルと，第３の薬液流入開口から供給された第３の薬液を前記基板に対向する薬液吐出開口から吐出する第３の薬液吐出ノズルと，前記基板に対向する第１の吸引開口から前記基板上の溶液を吸引する第１の溶液吸引ノズルと，前記基板に対向する第２の吸引開口から前記基板上の溶液を吸引する第２の溶液吸引ノズルとを具備する薬液吐出／吸引部と、前記薬液吐出／吸引部と前記基板とを相対的に水平移動させる移動機構と、薬液吐出／吸引部と基板主面との距離を略一定に保つ機構とを具備し、前記基板に対する前記薬液吐出／吸引部の移動方向前方側から、第２の薬液吐出開口、第１の吸引開口、前記第１の薬液吐出開口、前記第２の吸引開口、第３の薬液吐出開口の順番に配置され、前記薬液吐出／吸引部は、第２の薬液吐出開口と第１の溶液吸引開口との間、第１の溶液吸引開口と第１の溶液吸引開口との間、第１の溶液吸引開口と第２の溶液吸引開口との間、第２の溶液吸引開口と第３の溶液吸引開口との間の何れか一つ以上の間に設けられ、下面が前記基板主面と対向する面に設けられた部材を更に具備し、前記第２の薬液吐出開口の断面積は、前記第２の薬液流入開口の断面積より小さいことを特徴とする。
【００１６】
（４）本発明の一例に係わる基板処理装置は、基板を略水平に保持する基板保持機構と、薬液流入開口から供給された第１の薬液を前記基板に対向する薬液吐出開口から吐出する第１の薬液吐出ノズルと、前記基板に対向する吸引開口から前記基板上の溶液を吸引する第１及び第２の溶液吸引ノズルとを具備し、前記薬液吐出開口及び吸引開口が前記基板主面に対して平行に配列された薬液吐出／吸引部と、前記薬液吐出／吸引部と前記基板とを相対的に水平移動させる移動機構と、薬液吐出／吸引部と基板主面との距離を略一定に保つ機構とを具備し、前記薬液吐出／吸引部の相対的な移動方向前方側から、第１の吸引開口、前記薬液流入開口、前記第２の吸引開口の順番に配置され、前記薬液吐出開口の断面積は、前記薬液流入開口の断面積より小さいことを特徴とする。
【００１７】
（５）本発明の一例に係わる基板処理装置は、基板を略水平に保持する基板保持機構と、第１の薬液流入開口から供給された薬液を前記基板に対向する薬液吐出開口から吐出する第１の薬液吐出ノズルと、第２の薬液流入開口から供給された第２の薬液を前記基板に対向する第２の薬液吐出口から吐出する第２の薬液吐出ノズルと、第３の薬液流入開口から供給された第３の薬液を前記基板に対向する第３の薬液吐出口から吐出する第３の薬液吐出ノズルと、前記基板に対向する第１の吸引開口から前記基板上の溶液を吸引する第１の溶液吸引ノズルと、前記基板に対向する第２の吸引開口から前記基板上の溶液を吸引する第２の溶液吸引ノズルとを具備し、前記薬液吐出開口、第１及び第２の吸引開口、並びに第２の薬液吐出開口が前記基板主面に対して平行に配列された薬液吐出／吸引部と、前記薬液吐出／吸引部と前記基板とを相対的に水平移動させる移動機構と、前記薬液吐出／吸引部と前記基板主面との距離を略一定に保つ機構とを具備し、前記基板に対する前記薬液吐出／吸引部の移動方向前方側から、第１の吸引開口、前記薬液流入開口、前記第２の吸引開口の順番に配置され、前記第２の薬液吐出開口は、前記薬液吐出開口及び吸引開口を含む領域を囲うように配置されていることを特徴とする。
【００１８】
（６）本発明の一例に係わる基板処理装置は、基板を略水平に保持する基板保持機構と、第１の薬液流入開口から供給された第１の薬液を前記基板に対向する薬液吐出開口から吐出する第１の薬液吐出ノズルと，第２の薬液流入開口から供給された第２の薬液を前記基板に対向する第２の薬液吐出開口から吐出する第２の薬液吐出ノズルと，第３の薬液流入開口から供給された第３の薬液を前記基板に対向する第３の薬液吐出開口から吐出する第３の薬液吐出ノズルと，前記基板に対向し、前記第１の薬液吐出開口を挟むように配置された第１及び第２の吸引開口から前記基板上の溶液を吸引する第１及び第２の溶液吸引ノズルと、第１の溶液吸引開口と第１の溶液吸引開口との間及び第１の溶液吸引開口と第２の溶液吸引開口との間に設けられ、下面が前記基板主面と対向する面に設けられた部材とを具備する薬液吐出／吸引部と、前記薬液吐出／吸引部と前記基板とを相対的に水平移動させる移動機構と、薬液吐出／吸引部と基板主面との距離を略一定に保つ機構と、前記部材と前記基板との間に電界をかける電圧印加部とを具備してなることを特徴とする。
【００１９】
【発明の実施の形態】
本発明の実施の形態を以下に図面を参照して説明する。
（第１の実施形態）
本発明の実施の形態１についてウエハを現像する場合を例に図１を参照して詳細に説明する。
【００２０】
図１は、本発明の第１の実施形態に係わる基板現像装置における基板処理部の概略構成を示す図である。
図１に示すように、本実施形態では、図１に示すように、現像装置１００は、基板１１、例えば半導体ウエハを略水平に保持する基板保持機構１０と、基板保持機構１０の上方に配置されたスキャンノズル（薬液吐出／吸引部）２０と、スキャンノズル２０に薬液を供給及びスキャンノズル２０から薬液を吸引する薬液供給／吸引系３０と、スキャンノズル２０に備付けられたギャップ測定機構４０と、スキャンノズル２０の両端に備え付けられたギャップ調整機構５０と、スキャンノズル２０と基板保持機構１０を相対的に略水平方向に移動させるための移動機構６０とを備えている。
【００２１】
スキャンノズル２０の側面には、スキャンノズル２０の下面と基板ホルダー１２上に載置される半導体ウエハ１１の上面との間隔を測定するためにレーザー光を用いたギャップ測定機構４０が設けられている。
【００２２】
移動機構６０は、スキャンステージ６１を有し、ギャップ調整機構５０は、スキャンノズル２０の両端部に設けられ、スキャンノズル２０と一体でスキャンステージ６１上を水平方向に移動可能に取付けられている。
【００２３】
そしてギャップ調整機構５０は、ピエゾ素子を備えており、ギャップ測定機構４０による測定結果に基づいて、スキャンノズル２０の下面と基板ホルダー（バキュームチャック）１２上に載置される半導体ウエハ１１の上面との間隔を所定値に調整するようになっている。
【００２４】
基板保持機構１０は、基板ホルダー１２と、補助板１３とを具備する。基板ホルダー１２上に基板１１が載置される。基板ホルダー１２の周囲に補助板１３が配置されている。補助板１３は上下動可能であり、現像時基板１１の表面と補助板１３との表面とがほぼ同じ高さになるようにする。これにより、スキャンノズル２０で現像液を吸引する際、ウエハ面内で等しく吸引力が働くようになる。
【００２５】
補助板１３としては、その表面と基板の表面との濡れ性が、ほぼ同じになるような材質を選ぶことが好ましい。具体的には、基板上での現像液の接触角と基板ホルダー上での現像液の接触角がほぼ同じになるようにする。
【００２６】
基板ホルダー１２に設けられた補助板７８は、上下動可能であり、使用時には基板１１表面と同じ高さまで上昇し、
スキャンノズルの詳細について図２を参照して説明する。図２は、本発明の第１の実施形態に係わる現像装置のスキャンノズルの構造を示す図である。図２（ａ）はスキャンノズルの下面側の平面図、図２（ｂ）はスキャンノズルの断面図である。
【００２７】
図２（ａ），（ｂ）に示すように、スキャンノズル２０は、基板ホルダー１２に対しての移動方向と垂直な方向に長辺を有する横断面長方形状の直柱状構造である。基板ホルダー１２と対向するスキャンノズルの下面は平坦面を有している。長辺は、少なくとも基板ホルダー１２の幅以上の長さを有している。
【００２８】
スキャンノズル２０下面側はノズルに接続された金属板（部材）４１であり、基板との間に電圧をかけられるようになっている。耐酸性、耐アルカリ性を有するに表面に酸化クロム膜を形成したＳＵＳを用いた。ノズルの材質はテフロンを用いており、その固定はＳＵＳを用いて補強した。
【００２９】
スキャンノズル２０は、現像液吐出ノズル２１，プリウエット液吐出ノズル２２，リンス液吐出ノズル２３，及び第１及び第２の吸引ノズル２４，２５を具備する。
【００３０】
スキャンノズル２０の上面に設けられた現像液流入口２１ａには、円管からスリット状に広がりをもつ現像液供給配管３１が接続されている。または、円管形状のリンス液供給配管３３とリンス液吐出ノズルの間に液溜めが挿入されている。
【００３１】
プリウエット液吐出ノズル２２は、スキャンノズル２０下面に近づくほど、基板主面に垂直な面の断面積が小さくなっている部分を有する。同様にスキャンノズル２０の上面に設けられたプリウエット液流入口２２ａには、円管からスリット状に広がりをもつプリウエット液供給配管３２が接続されている。または、円管形状のプリウエット液供給管管３２とプリウエット液吐出ノズル２２との間に液溜めが挿入されている。
【００３２】
リンス液吐出ノズル２３は、スキャンノズル２０下面に近づくほど、基板主面に垂直な面の断面積が小さくなっている部分を有する。同様にスキャンノズル２０の上面に設けられたリンス液流入口２３ａには、円管からスリット状に広がりをもつリンス液供給配管３３が接続されている。または、円管形状のリンス液供給配管３３とリンス液吐出ノズルの間に液溜めが形成されている。
【００３３】
スキャンノズル２０の上面に設けられた溶液排出口２４ａ，２５ａには、円管からスリット状に広がりをもつ溶液排出配管３４が接続されている。
【００３４】
それぞれの径をリンス液吐出口２３のスリット巾は０．５ｍｍである。又、リンス液吐出ノズル２３へのリンス液流入口２３ａの巾は５ｍｍである。又、現像液吐出口２１ｂ、溶液吸引口２４ｂ，２５ｂの巾はそれぞれ２ｍｍである。
【００３５】
現像液供給配管３１から供給された現像液は、現像液流入口２１ａから現像液吐出ノズル２１内に供給される。そして、現像液吐出ノズル２１内に供給された現像液は、基板１１に対向する現像液吐出口２１ｂから吐出される。
【００３６】
プリウエット液供給配管３２から供給されたプリウエット液は、プリウエット液流入口２２ａからプリウエット液吐出ノズル２２内に供給される。そして、プリウエット液吐出ノズル２２内に供給されたプリウエット液は、基板１１に対向するプリウエット液吐出口２２ｂから吐出される。
【００３７】
リンス液供給配管３３から供給されたリンス液は、リンス液流入口２３ａからリンス液吐出ノズル２３内に供給される。そして、リンス液吐出ノズル２３内に供給されたリンス液は、基板１１に対向するリンス液吐出口２３ｂから吐出される。
【００３８】
基板１１上に供給された溶液（現像液，プリウエット液，及びリンス液）は、基板１１に対向する溶液吸引口２４ｂ，２５ｂから吸引される。吸引された溶液は、第１及び第２の吸引ノズル２４，２５を介して、溶液吸引系に排出される。
【００３９】
本実施形態では、現像液吐出口２１ｂ，プリウエット液吐出口２２ｂ，リンス液吐出口２３ｂ及び溶液吸引口２４ｂ，２５ｂは、基板ホルダー１２に対しての移動方向と垂直な方向に長辺を有し、且つ移動方向と平行な方向に短辺を有する長方形（スリット）状の開口である。
【００４０】
本実施形態では、現像液吐出口２１ｂとプリウエット液吐出口２２ｂとリンス液吐出口２３ｂと２個の溶液吸引口２４ｂ，２５ｂとは、基板ホルダー１２に対しての移動方向と平行な方向に沿って、互いに所定の間隔をおいて配置されている。
【００４１】
基板ホルダー１２に対しての移動方向に平行な平行な方向に沿って、プリウエット液吐出口２２ｂ，第１の溶液吸引口２４ｂ，現像液吐出口２１ｂ，第２の吸引口２５ｂ及びリンス液吐出口２３ｂが配置されている。
【００４２】
現像液吐出口２１ｂと第１の溶液吸引口２４ｂとの距離を１０ｍｍ、現像液吐出口２１ｂと第２の吸引口２５ｂとの距離を１０ｍｍとした。従って、現像液吐出口２１ｂから吐出された現像液はその両側に配置された溶液吸引口２４ｂ，２５ｂへと向かう流れを作り、２つの溶液吸引口２４ｂ，２５ｂで挟まれた領域においてのみ現像が行われる。
【００４３】
スキャンノズル２０下面と基板１１との距離（ギャップ）を約１００μｍに設定し、該ノズルは水平方向、垂直方向に移動可能となるよう駆動機構を具備した。
【００４４】
次に、本実施形態の現像装置を用いて、現像する方法について、図３及び図４を参照して説明する。
【００４５】
現像に先立ち、半導体ウェハ７１上に、０．４μｍ厚のレジスト等の感光性樹脂膜７２を形成する。ＫｒＦエキシマ・ステッパーによりクロムマスクを介して露光し、感光性樹脂膜に潜像を形成する。
【００４６】
次に、潜像が形成された感光性樹脂膜７２の現像を行う手順を説明する。ウエハ７１の直径とほぼ同サイズでウエハ全面に液供給可能なスキャンノズルをイニシャルポジションに動かす。ウエハを基板ホルダー１２で水平に保持する。補助板１３表面の高さをウエハ７１の高さと略同じにする。
【００４７】
プリウエット液吐出口２２ｂからプリウエット液（純水）７４を吐出すると共に、リンス液吐出口２３ｂからリンス液７５を吐出し、補助板１３上、及びウエハ７１上がプリウエット液７４又はリンス液７５で満たされた状態にする。スキャンノズル２０をウエハ７１主面上端部からギャップ１００μｍを保ちながら速度０．５ｍｍ／ｓｅｃで走査させると同時に現像液７３吐出、吸引を開始させる。本実施形態において、現像液はＡＤ−１０（多摩化学製：規定度０．２７Ｎ）を使用する。現像液吐出流量、及び吸引流量、吸引流量はそれぞれ現像液吐出口から吐出された現像液の流量が等しくなるようにレギュレータで吸引圧を調整する。
【００４８】
現像液７３は、現像液吐出口２１ｂと両側の溶液吸引口２４ｂ及び２５ｂ間におけるスキャンノズル２０下面と被処理面との間隙を通して流れ、その領域間では、常に新鮮な現像液が供給され、フォトレジストが溶解した現像液は、直ちに、吸引されて取り除かれ、領域間には、常に新鮮な現像液が液盛りされた状態になる。
【００４９】
スキャンノズル２０の走査開始から走査終了まで、金属板４１にも電圧をかけ続けながら処理を行った。印加電圧は１Ｖとした。
【００５０】
ウエハ７１とスキャンノズル２０下面とのギャップについては、ギャップ測定機構４０でギャップを測定しつつ、設定値である１００μｍになるようギャップ調整機構５０に制御をかけながらノズル走査を行った。プリウエット液吐出口２２ｂ、リンス液吐出口２３ｂからは処理開始から処理終了まで、プリウエット液、リンス液は常に吐出している状態である。現像液吐出口２１ｂから溶液吸引口２４ｂ，２５ｂまでの長さが１０ｍｍとしたので実効の現像時間はウエハ上のすべての点において４０ｓｅｃである。
【００５１】
スキャンノズル２０がウエハ７１面上を横切った後、ウエハ７１表面のリンスを充分行う。リンス後、ウエハ７１を乾燥させて、レジストパターン形成が完了する。
【００５２】
形成されたパターンを用いてマスク欠陥検査装置で欠陥評価を行ったところ、パターンエリア約１２０ｍｍ□において欠陥数が１０３個と電界を加えないで処理を行った場合の欠陥数２５０個に比べて大幅に低減することができた。
【００５３】
リンス液吐出ノズル２３が、リンス液吐出口２３ｂに近づくにつれて、断面積が小さくなっている部分を有することによって、以下の効果を有する。なお、このリンス液吐出ノズル２３の構造は、リンス液流入口２３ａの断面積がリンス液吐出口２３ｂの断面積より大きいと言い換えることができる。
【００５４】
現像が進行するにつれ感光性樹脂膜等の有機異物がスキャンノズル２０下面あるいはウエハ７１表面に付着する場合が考えられる。リンス液吐出ノズル２３をリンス液吐出口２３ｂに近づくにつれて狭くする機構を採用することにより、リンス液吐出口２３ｂからのリンス液の吐出速度を高め、かつ広角度に吐出することが可能となる。よって、通常のリンスにおいては除去することが困難であるような極微細パターン間等に付着した現像副産物等の効率的除去が可能となり、ひいては欠陥を低減することが可能となる。
【００５５】
又、吐出口の径を狭めることにより吐出口の径を狭めない場合に比べて同じ流量のリンス液を流した場合において強いインパクトを与えることが可能となり、現像副産物の効率的除去及び薬液、リンス液の消費量低減が同時に実現可能となる。
【００５６】
吐出速度の例を示す。該ノズルへのリンス液の単位時間当たりの流量が１Ｌ／ｍｉｎであるとすると、流入経路の断面積が７５０ｍｍ^２（５ｍｍ×１５０ｍｍ）である場合、１３３３ｍｍ／ｍｉｎの流入速度である。吐出口の断面積を７５ｍｍ^２（０．５ｍｍ×１５０ｍｍ）すると、１３３３３ｍｍ／ｍｉｎの平均流速となり、断面積に反比例して吐出速度を早くすることが可能となり、ひいては流量を変えることなく高インパクト化が可能となる。
【００５７】
プリウエット液吐出ノズル２２が、プリウエット液吐出口２２ｂに近づくにつれて、断面積が小さくなっている部分を有することによって、以下の効果を有する。なお、このプリウエット液吐出ノズル２２の構造は、プリウエット液流入口２２ａの断面積がプリウエット液吐出口２２ｂの断面積より大きいと言い換えることができる。
ウエハ７１表面にダストが付着している場合が考えられる。ウエハ表面出すとが付着した状態で現像を行うと欠陥が発生することになる。プリウエット液吐出ノズル２２をプリウエット液吐出口２２ｂに近づくにつれて狭くする機構を採用することにより、プリウエット液吐出口２２ｂからのプリウエット液の吐出速度を高め、かつ広角度に吐出することが可能となる。よって、ウエハ７１表面に付着するダストの効率的除去が可能となり、ひいては欠陥を低減することが可能となる。
【００５８】
現像液吐出ノズル２１が、現像液吐出口２１ｂに近づくにつれて、断面積が小さくなっている部分を有することによって、以下の効果を有する。なお、この現像液吐出ノズル２１の構造は、現像液流入口２１ａの断面積が現像液吐出口２１ｂの断面積より大きいと言い換えることができる。
上記装置を用いた現像では、現像が進行するにつれ感光性樹脂膜等の現像副産物が極微細パターン間に留まり、現像の促進を阻害することがある。現像液吐出ノズル２１を現像液吐出口２１ｂに近づくにつれて狭くする機構を採用することにより、現像液吐出口２１ｂからの現像液の吐出速度を高め、かつ広角度に吐出することが可能となる。よって、極微細パターン間等に留まっている現像副産物等の効率的除去が可能となり、現像を促進することができる。
【００５９】
リンス液供給口から吐出口に至るまでの流入経路の形状の例を図５〜図１０に示す。図５〜図１０に示したようにただ一つの形状に限定されるものではない。斜め形状であってもよいし、曲線的であってもよい。又、階段状に狭めていくことも有り得る。理想的には液の溜まりが生じない斜め形状がよい。又、供給口から一旦広がった後に最終的に吐出口にて狭くなる構造でもよい。基板上のレジストから見て先に処理される側の吐出口は通常の大きさの開口で、後に処理される側のリンス液吐出口の開口断面積を狭くする場合も有り得る。本実施例は現像液吐出口についても適用可能である。
【００６０】
基板−スキャンノズル間に電圧を印加することにより以下の効果がある。
上記装置では、現像が進行するにつれ感光性薄膜等の有機物異物がスキャンノズル２０下面あるいはウエハ７１表面に付着する場合が考えられる。ウエハ７１表面に付着した場合、欠陥になる恐れがあるため処理中あるいは処理後においてノズルと基板の間に電界を与えることにより基板の表面電位或いは異物の表面電位に変化を与えつつ、リンス液吐出によるインパクトや流れによる力を異物に与えることにより、効率的に異物を基板表面から除去することが可能になると考えられる。又、現像処理を行った際にノズル下面に有機物等の異物が付着しないようにするための方法としても有効であると考えられる。
【００６１】
ノズル下面は薬液に接触する部分であるため、耐薬品性を有しかつ安定である必要性がある。酸化クロム膜を用いることにより導電性を有しかつ高い耐薬品性、安定性を実現できる。
【００６２】
本実施形態の場合、ノズル下面と基板との電位差を１Ｖとしたが、必ずしもその値に限定されるものではない。欠陥の除去効率が上がるよう用いている基板やレジストに応じて適宜設定されるべきものである。
【００６３】
又、本実施形態においてはノズル下面全域に表面に酸化クロム膜が形成された金属板を設けたが、必要に応じた個所のみ設置しても良い（例えば現像液吸引口とリンス液吐出口で挟まれた領域のみの場合も有り得る）。
【００６４】
又、図３に示したようにリンス液吐出ノズルの形状を現像液吐出口及び現像液吸引口を覆うように設定することにより現象処理領域に欠陥の原因となる泡が混入するのを防ぐことができ、このような実施の形態も有り得る。
【００６５】
又、金属板を複数に分割し異なった電圧値を設定することも有り得る。
又、本実施形態についてはウエハの現像に関し適用例を示したが、ウエハの現像だけに限定されるものではない。例えばウエハのウエットエッチングや半導体製造用のフォトマスク製作プロセスにおける基板上の感光性膜の現像、ウエットエッチング、洗浄、及びカラーフィルター製作プロセス、及びＤＶＤ等のディスクの加工プロセスにおける現像等においても適用可能である。
【００６６】
なお、本発明は、上記各実施形態に限定されるものではなく、実施段階ではその要旨を逸脱しない範囲で種々に変形することが可能である。更に、上記実施形態には種々の段階の発明が含まれており、開示される複数の構成要件における適宜な組み合わせにより種々の発明が抽出され得る。例えば、実施形態に示される全構成要件から幾つかの構成要件が削除されても、発明が解決しようとする課題の欄で述べた課題が解決でき、発明の効果の欄で述べられている効果が得られる場合には、この構成要件が削除された構成が発明として抽出され得る。
【００６７】
【発明の効果】
以上説明したように本発明によれば、基板上に薬液を吐出しつつ、薬液を吸引して、基板に対して薬液処理を行う基板処理装置において、薬液処理による欠陥の発生を抑制し得る。
【図面の簡単な説明】
【図１】第１の実施形態に係わる現像装置における基板処理部の概略構成を示す図。
【図２】第１の実施形態に係わる現像装置のスキャンノズルの構造を示す図。
【図３】第１の実施形態に係わる現像装置を用いた現像処理の説明に用いる平面図。
【図４】第１の実施形態に係わる現像装置を用いた現像処理の説明に用いる断面図。
【図５】現像装置のスキャンノズルの変形例を示す断面図。
【図６】現像装置のスキャンノズルの変形例を示す断面図。
【図７】現像装置のスキャンノズルの変形例を示す断面図。
【図８】現像装置のスキャンノズルの変形例を示す断面図。
【図９】現像装置のスキャンノズルの変形例を示す断面図。
【図１０】現像装置のスキャンノズルの変形例を示す断面図。
【符号の説明】
１０…基板保持機構，１１…基板，１２…基板ホルダー，１３…補助板，２０…スキャンノズル，２１…現像液吐出ノズル，２１ａ…現像液流入口，２１ｂ…現像液吐出口，２２…プリウエット液吐出ノズル，２２ａ…プリウエット液流入口，２２ｂ…プリウエット液吐出口，２３…リンス液吐出ノズル，２３ａ…リンス液流入口，２３…リンス液吐出口，２３ｂ…リンス液吐出口，２４…第１の吸引溶液ノズル，２４ａ…第１の溶液排出口，２４ｂ…第１の溶液吸引口，２５…第２の溶液吸引ノズル，２５ａ…第２の溶液排出口，２５ｂ…第２の溶液吸引口，２７…リンス液流入口，３０…吸引系，３１…現像液供給配管，３２…プリウエット液供給配管，３３…リンス液供給配管，４０…ギャップ測定機構，４１…金属板，５０…ギャップ調整機構，６０…移動機構，６１…スキャンステージ，７１…半導体ウェハ，７２…感光性樹脂膜，７３…現像液，７４…プリウエット液，７５…リンス液，７８…補助板[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate processing apparatus used for a semiconductor (wafer process, exposure mask manufacturing process) and a chemical processing method (particularly development, etching, cleaning) in a liquid crystal device manufacturing technique.
[0002]
[Prior art]
A wet process is widely used as a substrate processing technique in a manufacturing process of a semiconductor device or a liquid crystal display. In particular, the paddle method has been actively studied in the development processing after the photosensitive resin is exposed. In the conventional paddle method, the chemical solution is supplied from the chemical solution supply unit arranged above the substrate while rotating the substrate, but the discharge pressure of the chemical solution and the supply amount of chemical solution per unit area are aligned at the center and the periphery of the substrate. This is very difficult, and it has become very difficult to obtain uniform processing accuracy within the surface. Further, as the development proceeds, dissolved products and low-concentration developer are generated as by-products.
[0003]
In general, a dissolved product or a developer having a reduced concentration is considered to have an effect of inhibiting the dissolution of the photosensitive thin film, and they are generated according to the density of the pattern in the substrate. Thereafter, the substrate is subjected to a force such as a centrifugal force due to the rotation of the substrate and moves around the substrate non-uniformly, so that the conventional paddle method cannot obtain a uniform processing accuracy in a plane. A processing method using a suction nozzle has also been proposed in order to cause chemical flow during development.
[0004]
Patent Document 1 proposes a nozzle having a developer discharge port and a developer suction port, and a substrate processing method using the nozzle. This relates to a method of processing a substrate by discharging a chemical solution from a chemical solution discharge port and bringing a nozzle having a function of sucking a chemical solution from a solution suction port close to the substrate, and eliminates a pattern dimension difference due to pattern density. is there. When such a chemical treatment is performed, an organic residue such as a photosensitive thin film may adhere to the substrate surface as development proceeds. If these residues are not removed before etching after development and become defective when etching is performed, it is desirable that the residue be removed during or after development.
[0005]
However, organic residue adhering to the substrate surface adheres to the substrate with a very strong force, and in order to remove them, it is difficult to remove them efficiently only by the suction force of the nozzle equipped with the suction port, and consequently It was a cause of defects.
[0006]
Further, when the development processing as shown in Patent Document 1 is repeatedly performed, the lower surface of the nozzle is contaminated by the adhesion of the organic residue, and the residue flows into the processing liquid by some force during the processing. Then, there is also a problem that it adheres on the substrate and becomes a defect. A method for preventing foreign matters such as organic substances from adhering to the lower surface of the nozzle has also been a problem that must be studied.
[0007]
Further, in the above apparatus, the rinse liquid discharge port is formed so as to sandwich the developer discharge port and the developer suction port. With this structure, bubbles may be mixed into the developer portion on the substrate from the side in the scanning direction. When bubbles are mixed in the developer, the development is not performed uniformly and defects may occur.
[0008]
[Patent Document 1]
JP 2000-388357 A
[0009]
[Problems to be solved by the invention]
As described above, there is a problem that development by-products generated by development adhere to the substrate surface and / or the lower surface of the scan nozzle and cause defects.
[0010]
In addition, there is a problem that bubbles are mixed in the developer on the substrate and development is not performed uniformly, resulting in defects.
[0011]
An object of the present invention is to provide a substrate processing apparatus capable of suppressing the occurrence of defects due to chemical processing in a substrate processing apparatus that performs chemical processing on a substrate by sucking the chemical while discharging the chemical onto the substrate. There is.
[0012]
[Means for Solving the Problems]
The present invention is configured as follows to achieve the above object.
[0013]
(1) A substrate processing apparatus according to an example of the present invention includes a substrate holding mechanism that holds a substrate substantially horizontally, and a first chemical solution that faces the substrate from a first chemical solution supplied from a first chemical solution inflow opening. A first chemical liquid discharge nozzle that discharges from the discharge opening; a second chemical liquid discharge nozzle that discharges the second chemical liquid supplied from the second chemical liquid inflow opening from the second chemical liquid discharge opening facing the substrate; A third chemical liquid discharge nozzle that discharges the third chemical liquid supplied from the third chemical liquid inflow opening from the third chemical liquid discharge opening facing the substrate; and the first suction opening facing the substrate from the substrate. A chemical solution discharge / suction unit comprising a first solution suction nozzle for sucking the solution above, and a second solution suction nozzle for sucking the solution on the substrate from a second suction opening facing the substrate; Relative to the chemical solution discharge / suction part and the substrate And a mechanism for keeping the distance between the chemical solution discharge / suction part and the main surface of the substrate substantially constant, from the front side in the movement direction of the chemical solution discharge / suction part with respect to the substrate, 2 chemical liquid discharge openings, a first suction opening, the first chemical liquid discharge opening, the second suction opening, and a third chemical liquid discharge opening are arranged in this order. Between the chemical solution discharge opening and the first solution suction opening, between the first solution suction opening and the first solution suction opening, between the first solution suction opening and the second solution suction opening, and second A member provided between any one or more of the solution suction opening and the third solution suction opening, and having a lower surface provided on a surface facing the main surface of the substrate. As the third chemical liquid discharge nozzle approaches the second and / or third chemical liquid discharge opening, , Characterized by having a portion of the area of the opening is small.
[0014]
(2) A substrate processing apparatus according to an example of the present invention includes a substrate holding mechanism that holds a substrate substantially horizontally, a chemical solution discharge nozzle that discharges a chemical solution supplied from a chemical solution inflow opening from a chemical solution discharge opening facing the substrate, and The first and second solution suction nozzles for sucking the solution on the substrate from the first and second suction openings arranged so as to face the substrate and sandwich the chemical solution discharge opening, and the chemical solution discharge opening A chemical solution discharge / suction unit, and a substrate having a lower surface provided on a surface facing the substrate main surface, the chemical solution discharge / suction unit, and the substrate. And a mechanism for maintaining the distance between the chemical solution discharge / suction part and the main surface of the substrate substantially constant, from the front side in the relative movement direction of the chemical solution discharge / suction part. , First solution suction opening, the chemical solution Disposed opening, in the order of the second solution suction opening out, the first solution discharge nozzle is closer to the solution discharge openings, and having a portion where the area of the opening is small.
[0015]
(3) A substrate processing apparatus according to an example of the present invention includes a substrate holding mechanism that holds a substrate substantially horizontally, and a first chemical solution supplied from a first chemical solution inflow opening from a chemical solution discharge opening facing the substrate. A first chemical liquid discharge nozzle for discharging, a second chemical liquid discharge nozzle for discharging the second chemical liquid supplied from the second chemical liquid inflow opening from the chemical liquid discharge opening facing the substrate, and a third chemical liquid inflow opening. A third chemical liquid discharge nozzle that discharges the third chemical liquid supplied from the first chemical liquid discharge opening facing the substrate, and a first suction liquid that sucks the solution on the substrate from the first suction opening facing the substrate. A chemical solution discharge / suction unit comprising a solution suction nozzle, and a second solution suction nozzle for sucking the solution on the substrate from a second suction opening facing the substrate, the chemical solution discharge / suction unit, and the substrate And move horizontally relative to And a mechanism for maintaining the distance between the chemical solution discharge / suction part and the main surface of the substrate substantially constant, and a second chemical solution discharge opening from the front side in the movement direction of the chemical solution discharge / suction part with respect to the substrate, The first suction opening, the first chemical liquid discharge opening, the second suction opening, and the third chemical liquid discharge opening are arranged in this order, and the chemical liquid discharge / suction part includes the second chemical liquid discharge opening and the first chemical liquid discharge opening. Between the first solution suction opening and the first solution suction opening, between the first solution suction opening and the second solution suction opening, between the second solution suction opening and the first solution suction opening. A member provided between one or more of the three solution suction openings and having a lower surface provided on a surface facing the main surface of the substrate, and a cross-sectional area of the second chemical solution discharge opening. Is smaller than the cross-sectional area of the second chemical solution inflow opening.
[0016]
(4) A substrate processing apparatus according to an example of the present invention includes a substrate holding mechanism for holding a substrate substantially horizontally, and a first chemical solution supplied from a chemical solution inflow opening through a chemical solution discharge opening facing the substrate. And a first solution suction nozzle for sucking a solution on the substrate from a suction opening facing the substrate, and the chemical solution discharge opening and the suction opening are formed on the main surface of the substrate. The chemical solution discharge / suction units arranged in parallel to each other, the moving mechanism for horizontally moving the chemical solution discharge / suction unit and the substrate, and the distance between the chemical solution discharge / suction unit and the main surface of the substrate are substantially constant. And a first suction opening, the chemical liquid inflow opening, and the second suction opening are arranged in this order from the front side in the relative movement direction of the chemical liquid discharge / suction unit. The cross-sectional area of the opening is the section of the chemical inflow opening. And it is smaller than the product.
[0017]
(5) A substrate processing apparatus according to an example of the present invention includes a substrate holding mechanism that holds a substrate substantially horizontally and a chemical solution supplied from a first chemical solution inflow opening through a chemical solution discharge opening that faces the substrate. A first chemical solution discharge nozzle, a second chemical solution discharge nozzle that discharges the second chemical solution supplied from the second chemical solution inflow opening from a second chemical solution discharge port facing the substrate, and a third chemical solution inflow opening. The third chemical solution supplied from the third chemical solution discharge nozzle that discharges the third chemical solution from the third chemical solution discharge port facing the substrate and the first suction opening facing the substrate sucks the solution on the substrate. A first solution suction nozzle; and a second solution suction nozzle for sucking a solution on the substrate from a second suction opening facing the substrate. The chemical solution discharge opening, the first and second suctions The opening and the second chemical liquid discharge opening are A chemical solution discharge / suction unit arranged in parallel to the main surface, a moving mechanism for relatively horizontally moving the chemical solution discharge / suction unit and the substrate, the chemical solution discharge / suction unit, and the substrate main surface; And a first suction opening, the chemical liquid inflow opening, and the second suction opening in this order from the front side in the moving direction of the chemical liquid discharge / suction unit with respect to the substrate. The second chemical liquid discharge opening is disposed so as to surround a region including the chemical liquid discharge opening and the suction opening.
[0018]
(6) A substrate processing apparatus according to an example of the present invention includes a substrate holding mechanism that holds a substrate substantially horizontally, and a first chemical solution supplied from a first chemical solution inflow opening from a chemical solution discharge opening facing the substrate. A first chemical liquid discharge nozzle for discharging, a second chemical liquid discharge nozzle for discharging the second chemical liquid supplied from the second chemical liquid inflow opening from the second chemical liquid discharge opening facing the substrate, and a third A third chemical liquid discharge nozzle that discharges the third chemical liquid supplied from the chemical liquid inflow opening from the third chemical liquid discharge opening facing the substrate, and the substrate facing the substrate and sandwiching the first chemical liquid discharge opening The first and second solution suction nozzles for sucking the solution on the substrate from the first and second suction openings disposed between the first solution suction opening and the first solution suction opening; and Provided between one solution suction opening and second solution suction opening A chemical solution discharge / suction part having a lower surface provided on a surface facing the substrate main surface, a movement mechanism for relatively horizontally moving the chemical solution discharge / suction part and the substrate, and a chemical solution It is characterized by comprising a mechanism for keeping the distance between the discharge / suction part and the main surface of the substrate substantially constant, and a voltage application part for applying an electric field between the member and the substrate.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
(First embodiment)
Embodiment 1 of the present invention will be described in detail with reference to FIG. 1 by taking as an example the case of developing a wafer.
[0020]
FIG. 1 is a diagram showing a schematic configuration of a substrate processing unit in the substrate developing apparatus according to the first embodiment of the present invention.
As shown in FIG. 1, in this embodiment, as shown in FIG. 1, the developing device 100 is disposed above a substrate holding mechanism 10 that holds a substrate 11, for example, a semiconductor wafer, substantially horizontally. A scan nozzle (chemical solution discharge / suction unit) 20, a chemical solution supply / suction system 30 for supplying the chemical solution to the scan nozzle 20 and sucking the chemical solution from the scan nozzle 20, and a gap measuring mechanism 40 provided in the scan nozzle 20 , A gap adjusting mechanism 50 provided at both ends of the scan nozzle 20 and a moving mechanism 60 for moving the scan nozzle 20 and the substrate holding mechanism 10 relatively in a substantially horizontal direction.
[0021]
A gap measuring mechanism 40 using laser light is provided on the side surface of the scan nozzle 20 to measure the distance between the lower surface of the scan nozzle 20 and the upper surface of the semiconductor wafer 11 placed on the substrate holder 12. .
[0022]
The moving mechanism 60 includes a scan stage 61, and the gap adjusting mechanism 50 is provided at both ends of the scan nozzle 20, and is attached to the scan nozzle 20 so as to be movable on the scan stage 61 in the horizontal direction.
[0023]
The gap adjusting mechanism 50 includes a piezo element, and based on the measurement result of the gap measuring mechanism 40, the lower surface of the scan nozzle 20 and the upper surface of the semiconductor wafer 11 placed on the substrate holder (vacuum chuck) 12. The interval is adjusted to a predetermined value.
[0024]
The substrate holding mechanism 10 includes a substrate holder 12 and an auxiliary plate 13. The substrate 11 is placed on the substrate holder 12. An auxiliary plate 13 is disposed around the substrate holder 12. The auxiliary plate 13 can be moved up and down so that the surface of the substrate 11 and the surface of the auxiliary plate 13 during development are substantially the same height. As a result, when the developer is sucked by the scan nozzle 20, a suction force is equally applied within the wafer surface.
[0025]
It is preferable to select a material for the auxiliary plate 13 so that the wettability between the surface and the surface of the substrate is substantially the same. Specifically, the contact angle of the developer on the substrate and the contact angle of the developer on the substrate holder are made substantially the same.
[0026]
The auxiliary plate 78 provided on the substrate holder 12 can move up and down, and rises to the same height as the surface of the substrate 11 during use.
Details of the scan nozzle will be described with reference to FIG. FIG. 2 is a diagram showing the structure of the scan nozzle of the developing device according to the first embodiment of the present invention. 2A is a plan view of the lower surface side of the scan nozzle, and FIG. 2B is a cross-sectional view of the scan nozzle.
[0027]
As shown in FIGS. 2A and 2B, the scan nozzle 20 has a rectangular columnar structure with a long cross section having a long side in a direction perpendicular to the moving direction with respect to the substrate holder 12. The lower surface of the scan nozzle facing the substrate holder 12 has a flat surface. The long side has a length at least equal to or larger than the width of the substrate holder 12.
[0028]
The lower surface side of the scan nozzle 20 is a metal plate (member) 41 connected to the nozzle so that a voltage can be applied to the substrate. SUS with a chromium oxide film formed on the surface was used to have acid resistance and alkali resistance. Teflon was used as the material of the nozzle, and its fixation was reinforced using SUS.
[0029]
The scan nozzle 20 includes a developer discharge nozzle 21, a prewetting liquid discharge nozzle 22, a rinse liquid discharge nozzle 23, and first and second suction nozzles 24 and 25.
[0030]
A developer supply pipe 31 that extends from the circular tube in a slit shape is connected to the developer inlet 21 a provided on the upper surface of the scan nozzle 20. Alternatively, a liquid reservoir is inserted between the circular rinse liquid supply pipe 33 and the rinse liquid discharge nozzle.
[0031]
The prewetting liquid discharge nozzle 22 has a portion in which the cross-sectional area of the surface perpendicular to the main surface of the substrate becomes smaller as it approaches the lower surface of the scan nozzle 20. Similarly, a prewetting liquid supply pipe 32 that extends in a slit shape from a circular pipe is connected to the prewetting liquid inlet 22 a provided on the upper surface of the scan nozzle 20. Alternatively, a liquid reservoir is inserted between the circular pipe-shaped prewetting liquid supply pipe 32 and the prewetting liquid discharge nozzle 22.
[0032]
The rinsing liquid discharge nozzle 23 has a portion in which the cross-sectional area of the surface perpendicular to the main surface of the substrate becomes smaller as it approaches the lower surface of the scan nozzle 20. Similarly, a rinsing liquid supply pipe 33 extending in a slit shape from a circular pipe is connected to a rinsing liquid inlet 23 a provided on the upper surface of the scan nozzle 20. Alternatively, a liquid reservoir is formed between the circular rinse liquid supply pipe 33 and the rinse liquid discharge nozzle.
[0033]
A solution discharge pipe 34 having a slit-like shape extending from a circular tube is connected to the solution discharge ports 24a and 25a provided on the upper surface of the scan nozzle 20.
[0034]
The slit width of each of the rinse liquid discharge ports 23 is 0.5 mm. The width of the rinse liquid inlet 23a to the rinse liquid discharge nozzle 23 is 5 mm. The widths of the developer discharge port 21b and the solution suction ports 24b and 25b are each 2 mm.
[0035]
The developer supplied from the developer supply pipe 31 is supplied into the developer discharge nozzle 21 from the developer inlet 21a. The developer supplied into the developer discharge nozzle 21 is discharged from the developer discharge port 21 b facing the substrate 11.
[0036]
The prewetting liquid supplied from the prewetting liquid supply pipe 32 is supplied into the prewetting liquid discharge nozzle 22 from the prewetting liquid inflow port 22a. Then, the prewetting liquid supplied into the prewetting liquid discharge nozzle 22 is discharged from a prewetting liquid discharge port 22 b facing the substrate 11.
[0037]
The rinse liquid supplied from the rinse liquid supply pipe 33 is supplied into the rinse liquid discharge nozzle 23 from the rinse liquid inlet 23a. The rinse liquid supplied into the rinse liquid discharge nozzle 23 is discharged from the rinse liquid discharge port 23 b facing the substrate 11.
[0038]
The solution (developer, prewetting solution, and rinse solution) supplied onto the substrate 11 is sucked from the solution suction ports 24 b and 25 b facing the substrate 11. The sucked solution is discharged to the solution suction system via the first and second suction nozzles 24 and 25.
[0039]
In the present embodiment, the developer discharge port 21b, the pre-wet liquid discharge port 22b, the rinse liquid discharge port 23b, and the solution suction ports 24b and 25b have long sides in a direction perpendicular to the moving direction with respect to the substrate holder 12. And a rectangular (slit) opening having a short side in a direction parallel to the moving direction.
[0040]
In the present embodiment, the developer discharge port 21b, the pre-wet liquid discharge port 22b, the rinse liquid discharge port 23b, and the two solution suction ports 24b and 25b are parallel to the moving direction with respect to the substrate holder 12. Are arranged at predetermined intervals along each other.
[0041]
A prewetting liquid discharge port 22b, a first solution suction port 24b, a developer discharge port 21b, a second suction port 25b, and a rinse liquid discharge along a parallel direction parallel to the moving direction with respect to the substrate holder 12. An outlet 23b is arranged.
[0042]
The distance between the developer discharge port 21b and the first solution suction port 24b was 10 mm, and the distance between the developer discharge port 21b and the second suction port 25b was 10 mm. Accordingly, the developer discharged from the developer discharge port 21b creates a flow toward the solution suction ports 24b and 25b arranged on both sides of the developer, and development is performed only in the region sandwiched between the two solution suction ports 24b and 25b. Done.
[0043]
The distance (gap) between the lower surface of the scan nozzle 20 and the substrate 11 was set to about 100 μm, and the nozzle was equipped with a drive mechanism so as to be movable in the horizontal and vertical directions.
[0044]
Next, a developing method using the developing device of the present embodiment will be described with reference to FIGS.
[0045]
Prior to development, a photosensitive resin film 72 such as a resist having a thickness of 0.4 μm is formed on the semiconductor wafer 71. Exposure is performed through a chrome mask by a KrF excimer stepper to form a latent image on the photosensitive resin film.
[0046]
Next, a procedure for developing the photosensitive resin film 72 on which the latent image is formed will be described. A scan nozzle that is approximately the same size as the diameter of the wafer 71 and can supply liquid to the entire surface of the wafer is moved to the initial position. The wafer is held horizontally by the substrate holder 12. The height of the auxiliary plate 13 surface is made substantially the same as the height of the wafer 71.
[0047]
A prewetting liquid (pure water) 74 is discharged from the prewetting liquid discharge port 22b, and a rinsing liquid 75 is discharged from the rinsing liquid discharge port 23b. The prewetting liquid 74 or the rinsing liquid is on the auxiliary plate 13 and the wafer 71. Filled with 75. The scan nozzle 20 is scanned from the upper end of the main surface of the wafer 71 at a speed of 0.5 mm / sec while maintaining a gap of 100 μm, and at the same time, discharge and suction of the developer 73 are started. In this embodiment, AD-10 (manufactured by Tama Chemicals: normality 0.27N) is used as the developer. The developer discharge flow rate, the suction flow rate, and the suction flow rate are adjusted by the regulator so that the flow rates of the developer discharged from the developer discharge ports are equal.
[0048]
The developer 73 flows through the gap between the lower surface of the scan nozzle 20 and the surface to be processed between the developer discharge port 21b and the solution suction ports 24b and 25b on both sides, and fresh developer is always supplied between the regions. The developer in which the resist is dissolved is immediately sucked and removed, and a fresh developer is always accumulated between the regions.
[0049]
From the start of scanning of the scan nozzle 20 to the end of scanning, processing was performed while applying voltage to the metal plate 41. The applied voltage was 1V.
[0050]
With respect to the gap between the wafer 71 and the lower surface of the scan nozzle 20, the nozzle was scanned while controlling the gap adjustment mechanism 50 so that the gap was measured by the gap measurement mechanism 40 and the set value was 100 μm. From the pre-wet liquid discharge port 22b and the rinse liquid discharge port 23b, the pre-wet liquid and the rinse liquid are always discharged from the start of the process to the end of the process. Since the length from the developer discharge port 21b to the solution suction ports 24b and 25b is 10 mm, the effective development time is 40 sec at all points on the wafer.
[0051]
After the scan nozzle 20 crosses the surface of the wafer 71, the surface of the wafer 71 is sufficiently rinsed. After rinsing, the wafer 71 is dried to complete the resist pattern formation.
[0052]
When a defect was evaluated with a mask defect inspection apparatus using the formed pattern, the number of defects was 103 in a pattern area of about 120 mm □, which is significantly larger than the number of defects when processing was performed without applying an electric field. It was possible to reduce it.
[0053]
The rinsing liquid discharge nozzle 23 has the following effects by having a portion whose cross-sectional area becomes smaller as it approaches the rinsing liquid discharge port 23b. In addition, the structure of this rinse liquid discharge nozzle 23 can be paraphrased as that the cross-sectional area of the rinse liquid inflow port 23a is larger than the cross-sectional area of the rinse liquid discharge port 23b.
[0054]
It can be considered that organic foreign matters such as a photosensitive resin film adhere to the lower surface of the scan nozzle 20 or the surface of the wafer 71 as the development proceeds. By adopting a mechanism that narrows the rinsing liquid discharge nozzle 23 as it approaches the rinsing liquid discharge opening 23b, the discharge speed of the rinsing liquid from the rinsing liquid discharge opening 23b can be increased and discharged at a wide angle. Therefore, it is possible to efficiently remove development by-products and the like adhering between ultrafine patterns that are difficult to remove by ordinary rinsing, and it is possible to reduce defects.
[0055]
In addition, by reducing the diameter of the discharge port, it is possible to give a strong impact when the rinse liquid of the same flow rate is flowed compared to the case where the diameter of the discharge port is not narrowed. Reduction of liquid consumption can be realized at the same time.
[0056]
An example of the discharge speed is shown. Assuming that the flow rate of the rinse liquid to the nozzle per unit time is 1 L / min, the cross-sectional area of the inflow path is 750 mm. ² In the case of (5 mm × 150 mm), the inflow rate is 1333 mm / min. The cross-sectional area of the discharge port is 75mm ² When (0.5 mm × 150 mm), an average flow velocity of 13333 mm / min is obtained, and the discharge speed can be increased in inverse proportion to the cross-sectional area. As a result, high impact can be achieved without changing the flow rate.
[0057]
The prewetting liquid discharge nozzle 22 has the following effects by having a portion whose cross-sectional area becomes smaller as it approaches the prewetting liquid discharge port 22b. In addition, the structure of this prewetting liquid discharge nozzle 22 can be paraphrased that the cross sectional area of the prewetting liquid inflow port 22a is larger than the cross sectional area of the prewetting liquid discharge port 22b.
A case where dust adheres to the surface of the wafer 71 can be considered. If development is performed with the wafer surface sticking out, defects will occur. By adopting a mechanism that narrows the prewetting liquid discharge nozzle 22 as it approaches the prewetting liquid discharge opening 22b, it is possible to increase the discharge speed of the prewetting liquid from the prewetting liquid discharge opening 22b and discharge it at a wide angle. It becomes possible. Therefore, it is possible to efficiently remove dust adhering to the surface of the wafer 71, thereby reducing defects.
[0058]
By having the part in which the cross-sectional area becomes smaller as the developer discharge nozzle 21 approaches the developer discharge port 21b, the following effects are obtained. In other words, the structure of the developer discharge nozzle 21 can be restated in that the cross-sectional area of the developer inflow port 21a is larger than the cross-sectional area of the developer discharge port 21b.
In development using the above apparatus, as the development progresses, development by-products such as a photosensitive resin film may remain between the very fine patterns, thereby hindering the promotion of development. By adopting a mechanism that narrows the developer discharge nozzle 21 as it approaches the developer discharge port 21b, the discharge speed of the developer from the developer discharge port 21b can be increased and discharged at a wide angle. Therefore, it is possible to efficiently remove development by-products and the like remaining between the ultrafine patterns, and development can be promoted.
[0059]
Examples of the shape of the inflow path from the rinse liquid supply port to the discharge port are shown in FIGS. As shown in FIGS. 5 to 10, the shape is not limited to a single shape. It may be diagonal or curved. Moreover, it may be narrowed down in a staircase shape. Ideally, an oblique shape that does not cause liquid accumulation is preferable. Further, it may have a structure in which it once spreads from the supply port and finally becomes narrow at the discharge port. The discharge port on the side processed first when viewed from the resist on the substrate is an opening of a normal size, and the opening cross-sectional area of the rinse liquid discharge port on the side processed later may be narrowed. This embodiment is also applicable to the developer discharge port.
[0060]
By applying a voltage between the substrate and the scan nozzle, the following effects are obtained.
In the above apparatus, it is conceivable that an organic foreign matter such as a photosensitive thin film adheres to the lower surface of the scan nozzle 20 or the surface of the wafer 71 as the development proceeds. When it adheres to the surface of the wafer 71, there is a risk of a defect, so that an electric field is applied between the nozzle and the substrate during or after the process, thereby changing the surface potential of the substrate or the surface potential of the foreign matter while discharging the rinse liquid. It is considered that the foreign matter can be efficiently removed from the surface of the substrate by applying the force due to the impact or flow caused by It is also considered effective as a method for preventing foreign matters such as organic substances from adhering to the lower surface of the nozzle when development processing is performed.
[0061]
Since the lower surface of the nozzle is in contact with the chemical solution, it is necessary to have chemical resistance and be stable. By using a chromium oxide film, it has conductivity and can realize high chemical resistance and stability.
[0062]
In the present embodiment, the potential difference between the lower surface of the nozzle and the substrate is 1 V, but is not necessarily limited to that value. It should be set as appropriate according to the substrate and resist used so as to increase the defect removal efficiency.
[0063]
In this embodiment, a metal plate having a chromium oxide film formed on the entire surface of the lower surface of the nozzle is provided. However, only a required portion may be provided (for example, a developer suction port and a rinse solution discharge port). It is also possible that there is only the sandwiched area).
[0064]
Also, as shown in FIG. 3, by setting the shape of the rinse liquid discharge nozzle so as to cover the developer discharge port and the developer suction port, it is possible to prevent bubbles that cause defects from entering the phenomenon processing region. Such an embodiment is also possible.
[0065]
It is also possible to set different voltage values by dividing the metal plate into a plurality of pieces.
Further, although an example of application of the present embodiment regarding the development of the wafer has been shown, it is not limited to the development of the wafer. For example, it can be applied to development of photosensitive films on substrates in wet mask etching processes and photomask manufacturing processes for semiconductor manufacturing, wet etching, cleaning, color filter manufacturing processes, and DVD and other disk processing processes. It is.
[0066]
The present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention at the stage of implementation. Further, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. For example, even if some constituent requirements are deleted from all the constituent requirements shown in the embodiment, the problem described in the column of the problem to be solved by the invention can be solved, and the effect described in the column of the effect of the invention Can be obtained as an invention.
[0067]
【The invention's effect】
As described above, according to the present invention, it is possible to suppress the occurrence of defects due to chemical processing in a substrate processing apparatus that performs chemical processing on a substrate by sucking the chemical while discharging the chemical onto the substrate.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a schematic configuration of a substrate processing unit in a developing device according to a first embodiment.
FIG. 2 is a view showing a structure of a scan nozzle of the developing device according to the first embodiment.
FIG. 3 is a plan view used for explaining development processing using the developing device according to the first embodiment.
FIG. 4 is a cross-sectional view used for explaining development processing using the developing device according to the first embodiment.
FIG. 5 is a cross-sectional view showing a modified example of the scan nozzle of the developing device.
FIG. 6 is a cross-sectional view showing a modified example of the scan nozzle of the developing device.
FIG. 7 is a cross-sectional view showing a modification of the scan nozzle of the developing device.
FIG. 8 is a cross-sectional view showing a modification of the scan nozzle of the developing device.
FIG. 9 is a cross-sectional view showing a modified example of the scan nozzle of the developing device.
FIG. 10 is a cross-sectional view showing a modified example of the scan nozzle of the developing device.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Substrate holding mechanism, 11 ... Substrate, 12 ... Substrate holder, 13 ... Auxiliary plate, 20 ... Scan nozzle, 21 ... Developer discharge nozzle, 21a ... Developer inlet, 21b ... Developer discharge port, 22 ... Pre-wet Liquid discharge nozzle, 22a ... Prewet liquid inlet, 22b ... Prewet liquid outlet, 23 ... Rinse liquid discharge nozzle, 23a ... Rinse liquid inlet, 23 ... Rinse liquid outlet, 23b ... Rinse liquid outlet, 24 ... First suction solution nozzle, 24a ... first solution discharge port, 24b ... first solution suction port, 25 ... second solution suction nozzle, 25a ... second solution discharge port, 25b ... second solution suction 27, rinse liquid inlet, 30 ... suction system, 31 ... developer supply pipe, 32 ... prewetting liquid supply pipe, 33 ... rinse liquid supply pipe, 40 ... gap measuring mechanism, 41 ... metal plate, 50 ... gap Adjusting mechanism, 60 ... moving mechanism, 61 ... scan stage, 71 ... semiconductor wafer, 72 ... photosensitive resin layer, 73 ... developer, 74 ... prewetting liquid, 75 ... rinsing liquid, 78 ... auxiliary plate

Claims

A substrate holding mechanism for holding the substrate substantially horizontally;
A first chemical liquid discharge nozzle that discharges the first chemical liquid supplied from the first chemical liquid inflow opening from the first chemical liquid discharge opening facing the substrate, and a second chemical liquid supplied from the second chemical liquid inflow opening. A second chemical solution discharge nozzle that discharges a chemical solution from a second chemical solution discharge opening that faces the substrate, and a third chemical solution discharge opening that opposes the third chemical solution supplied from the third chemical solution inflow opening to the substrate. A third chemical liquid discharge nozzle that discharges from the first liquid suction nozzle; a first solution suction nozzle that sucks a solution on the substrate from a first suction opening that faces the substrate; and a second suction opening that faces the substrate. A chemical solution discharge / suction section comprising a second solution suction nozzle for sucking the solution on the substrate;
A moving mechanism for relatively horizontally moving the chemical liquid discharge / suction unit and the substrate;
A mechanism for maintaining the distance between the chemical liquid discharge / suction part and the main surface of the substrate substantially constant;
From the front side in the movement direction of the chemical liquid discharge / suction unit with respect to the substrate, a second chemical liquid discharge opening, a first suction opening, the first chemical liquid discharge opening, the second suction opening, and a third chemical liquid discharge opening Arranged in the order of
The chemical solution discharge / suction unit includes a second chemical solution discharge opening and a first solution suction opening, a first solution suction opening and a first solution suction opening, a first solution suction opening and a first solution suction opening. Between the second solution suction opening and between the second solution suction opening and the third solution suction opening. The lower surface is provided on a surface facing the substrate main surface. Further comprising a member,
The substrate processing apparatus, wherein the second and / or third chemical solution discharge nozzle has a portion in which an area of the opening becomes smaller as the second and / or third chemical solution discharge opening approaches.

2. The substrate processing apparatus according to claim 1, wherein the first chemical liquid discharge nozzle has a portion in which an area of the opening becomes smaller as the chemical liquid discharge opening approaches.

A substrate holding mechanism for holding the substrate substantially horizontally;
A chemical liquid discharge nozzle that discharges the chemical liquid supplied from the chemical liquid inflow opening from the chemical liquid discharge opening facing the substrate, and first and second suction openings that are disposed to face the substrate and sandwich the chemical liquid discharge opening Are provided between the first and second solution suction nozzles for sucking the solution on the substrate from the chemical solution discharge opening and the two solution suction openings, and the lower surface is provided on the surface facing the substrate main surface. A chemical solution discharge / suction part comprising:
A moving mechanism for relatively horizontally moving the chemical liquid discharge / suction unit and the substrate;
A mechanism for maintaining the distance between the chemical liquid discharge / suction unit and the main surface of the substrate substantially constant;
From the front side in the relative movement direction of the chemical solution discharge / suction unit, the first solution suction opening, the chemical solution discharge opening, and the second solution suction opening are arranged in this order.
The substrate processing apparatus, wherein the first chemical solution discharge nozzle has a portion in which an area of the opening becomes smaller as the chemical solution discharge opening approaches.

A substrate holding mechanism for holding the substrate substantially horizontally;
The first chemical liquid discharge nozzle that discharges the first chemical liquid supplied from the first chemical liquid inflow opening from the chemical liquid discharge opening facing the substrate, and the second chemical liquid supplied from the second chemical liquid inflow opening are A second chemical liquid discharge nozzle that discharges from a chemical liquid discharge opening facing the substrate, and a third chemical liquid discharge nozzle that discharges the third chemical liquid supplied from the third chemical liquid inflow opening from the chemical liquid discharge opening facing the substrate A first solution suction nozzle for sucking a solution on the substrate from a first suction opening facing the substrate, and a second for sucking the solution on the substrate from a second suction opening facing the substrate. A chemical solution discharge / suction unit comprising a solution suction nozzle of
A moving mechanism for relatively horizontally moving the chemical liquid discharge / suction unit and the substrate;
A mechanism for maintaining the distance between the chemical liquid discharge / suction part and the main surface of the substrate substantially constant;
From the front side in the movement direction of the chemical liquid discharge / suction unit with respect to the substrate, a second chemical liquid discharge opening, a first suction opening, the first chemical liquid discharge opening, the second suction opening, and a third chemical liquid discharge opening Arranged in the order of
The chemical solution discharge / suction unit includes a second chemical solution discharge opening and a first solution suction opening, a first solution suction opening and a first solution suction opening, a first solution suction opening and a first solution suction opening. Between the second solution suction opening and between the second solution suction opening and the third solution suction opening. The lower surface is provided on a surface facing the substrate main surface. Further comprising a member,
The substrate processing apparatus, wherein a cross-sectional area of the second chemical liquid discharge opening is smaller than a cross-sectional area of the second chemical liquid inflow opening.

The substrate processing apparatus according to claim 4, wherein a cross-sectional area of the first chemical liquid discharge opening is smaller than a cross-sectional area of the chemical liquid inflow opening.

A substrate holding mechanism for holding the substrate substantially horizontally;
A first chemical solution discharge nozzle that discharges a first chemical solution supplied from a chemical solution inflow opening from a chemical solution discharge opening facing the substrate; a first and a first suction device for sucking a solution on the substrate from a suction opening facing the substrate; A chemical solution discharge / suction part, comprising a second solution suction nozzle, wherein the chemical solution discharge opening and the suction opening are arranged in parallel to the main surface of the substrate;
A moving mechanism for relatively horizontally moving the chemical liquid discharge / suction unit and the substrate;
A mechanism for maintaining the distance between the chemical liquid discharge / suction part and the main surface of the substrate substantially constant;
From the front side of the relative direction of movement of the chemical solution discharge / suction unit, the first suction opening, the chemical solution inflow opening, and the second suction opening are arranged in this order.
The substrate processing apparatus, wherein a cross-sectional area of the chemical solution discharge opening is smaller than a cross-sectional area of the chemical solution inflow opening.

6. The substrate processing apparatus according to claim 1, wherein a shape of the second chemical solution discharge opening is a slit shape longer than a maximum width of the substrate.

5. The substrate processing apparatus according to claim 1, wherein a shape of the second or / and third chemical solution discharge opening is a slit longer than a maximum width of the substrate.

The substrate processing apparatus according to claim 3, wherein a shape of the chemical solution discharge opening is a slit shape longer than a maximum width of the substrate.

A substrate holding mechanism for holding the substrate substantially horizontally;
A first chemical liquid discharge nozzle that discharges the chemical liquid supplied from the first chemical liquid inflow opening from the chemical liquid discharge opening facing the substrate, and a second chemical liquid supplied from the second chemical liquid inflow opening faces the substrate. A second chemical liquid discharge nozzle that discharges from the second chemical liquid discharge port, and a third chemical liquid that is supplied from the third chemical liquid inflow opening through a third chemical liquid discharge port that faces the substrate. A chemical solution discharge nozzle, a first solution suction nozzle for sucking a solution on the substrate from a first suction opening facing the substrate, and a solution on the substrate from a second suction opening facing the substrate A chemical solution discharge nozzle, and the chemical solution discharge opening, the first and second suction openings, and the second chemical solution discharge opening arranged in parallel to the main surface of the substrate. And
A moving mechanism for relatively horizontally moving the chemical liquid discharge / suction unit and the substrate;
A mechanism for maintaining the distance between the chemical liquid discharge / suction part and the main surface of the substrate substantially constant;
From the front side in the moving direction of the chemical liquid discharge / suction unit with respect to the substrate, the first suction opening, the chemical liquid inflow opening, and the second suction opening are arranged in this order.
The substrate processing apparatus, wherein the second chemical liquid discharge opening is disposed so as to surround a region including the chemical liquid discharge opening and the suction opening.

A substrate holding mechanism for holding the substrate substantially horizontally;
The first chemical liquid discharge nozzle that discharges the first chemical liquid supplied from the first chemical liquid inflow opening from the chemical liquid discharge opening facing the substrate, and the second chemical liquid supplied from the second chemical liquid inflow opening are A second chemical liquid discharge nozzle that discharges from a second chemical liquid discharge opening facing the substrate, and a third chemical liquid supplied from the third chemical liquid inflow opening are discharged from the third chemical liquid discharge opening facing the substrate. First and second sucking solutions on the substrate from a third chemical solution discharge nozzle and first and second suction openings arranged to face the substrate and sandwich the first chemical solution discharge opening The solution suction nozzle, and between the first solution suction opening and the first solution suction opening, and between the first solution suction opening and the second solution suction opening, and the lower surface is provided on the substrate main surface. Chemical solution discharge / suction part comprising a member provided on the opposite surface ,
A moving mechanism for relatively horizontally moving the chemical liquid discharge / suction unit and the substrate;
A mechanism for maintaining the distance between the chemical liquid discharge / suction unit and the main surface of the substrate substantially constant;
A substrate processing apparatus comprising: a voltage applying unit that applies an electric field between the member and the substrate.

The substrate processing apparatus according to claim 11, wherein a film containing chromium oxide is formed on a surface of the member.