JP2005019972A5 - - Google Patents

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Publication number
JP2005019972A5
JP2005019972A5 JP2004155506A JP2004155506A JP2005019972A5 JP 2005019972 A5 JP2005019972 A5 JP 2005019972A5 JP 2004155506 A JP2004155506 A JP 2004155506A JP 2004155506 A JP2004155506 A JP 2004155506A JP 2005019972 A5 JP2005019972 A5 JP 2005019972A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004155506A
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Japanese (ja)
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JP2005019972A (ja
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Publication date
Application filed filed Critical
Priority to JP2004155506A priority Critical patent/JP2005019972A/ja
Priority claimed from JP2004155506A external-priority patent/JP2005019972A/ja
Publication of JP2005019972A publication Critical patent/JP2005019972A/ja
Publication of JP2005019972A5 publication Critical patent/JP2005019972A5/ja
Pending legal-status Critical Current

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JP2004155506A 2003-05-30 2004-05-26 Ｉｉｉ族窒化物半導体素子の製造方法 Pending JP2005019972A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004155506A JP2005019972A (ja) 2003-05-30 2004-05-26 Ｉｉｉ族窒化物半導体素子の製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003153756 2003-05-30
JP2004155506A JP2005019972A (ja) 2003-05-30 2004-05-26 Ｉｉｉ族窒化物半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JP2005019972A JP2005019972A (ja) 2005-01-20
JP2005019972A5 true JP2005019972A5 (ko) 2007-06-07

Family

ID=34196572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004155506A Pending JP2005019972A (ja) 2003-05-30 2004-05-26 Ｉｉｉ族窒化物半導体素子の製造方法

Country Status (1)

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JP (1) JP2005019972A (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258376A (ja) * 2006-03-22 2007-10-04 Rohm Co Ltd 半導体素子の製造方法
JP4963679B2 (ja) * 2007-05-29 2012-06-27 キヤノン株式会社 液体吐出ヘッド用基体及びその製造方法、並びに該基体を用いる液体吐出ヘッド
JP7223941B2 (ja) * 2020-12-18 2023-02-17 日亜化学工業株式会社 発光素子の製造方法
CN116936701B (zh) * 2023-09-19 2023-12-01 江西兆驰半导体有限公司 一种发光二极管外延片及制备方法、led芯片

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2601127B2 (ja) * 1993-03-04 1997-04-16 日新電機株式会社 プラズマｃｖｄ装置
JP3141805B2 (ja) * 1997-01-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
JP3189877B2 (ja) * 1997-07-11 2001-07-16 日本電気株式会社 低転位窒化ガリウムの結晶成長方法
JP2000345349A (ja) * 1999-06-04 2000-12-12 Anelva Corp Ｃｖｄ装置
JP4299393B2 (ja) * 1999-01-20 2009-07-22 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
JP4683730B2 (ja) * 2001-01-04 2011-05-18 シャープ株式会社 窒化物半導体発光素子とこれを含む装置

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