JP2005019499A - Device and method for forming film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device and a method for forming film by which the film forming temperature can be lowered by using light energy and, in addition, can prevent the interruption of the transmission of light in a light transmitting window caused by film formation. <P>SOLUTION: In the method, first and second reaction vessels are prepared and, in addition, an airtight transporting chamber used for transporting substrates between the reaction chambers is prepared. A first gas supplying section which supplies a first gaseous material, for example, a dichlorosilane gas is provided in the first reaction chamber, and a second gas supplying section which supplies a second gaseous material, for example, an ammonia gas and a light projecting section, for example, an excimer lamp are provided in the second reaction vessel. Firstly, a monomolecular layer of the dichlorosilane gas is formed on a substrate by heating the substrate in the first reaction vessel. Then the substrate is transported to the second reaction vessel, and a silicon nitride film is formed on the substrate by supplying the ammonia gas to the surface of the substrate and, at the same time, by causing a reaction between dichlorosilane molecules and ammonia on the surface of the substrate by using the light energy emitted from the excimer lamp. This cycle is performed, for example, twice or more. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a film forming apparatus and a film forming method for forming a film on an object to be processed by reaction of a source gas.
[0002]
[Prior art]
Semiconductor devices have adopted a multi-layered structure along with higher integration, and are becoming thinner and finer. Therefore, the heat history for the film formed in the previous process is minimized in the heat treatment process in the semiconductor manufacturing process. In order to achieve this, lower temperatures are required. For example, a diffusion layer for diffusing impurities is formed between the source and drain of the CMOS, and this diffusion layer tends to become shallower. However, if the process temperature is high in the subsequent heat treatment process, the diffusion layer is re-diffused by heat. The depth becomes larger than the design value. Further, although it is considered to use nickel as an electrode material for some devices, since the melting point of nickel is low, realization of a low temperature process is demanded.
[0003]
For example, a silicon nitride film is a promising gate insulating film because it has a high relative dielectric constant, and even if the physical film thickness is large, it can provide the same electrical characteristics as a silicon oxide film and has a large effect of preventing leakage current. is there. This silicon nitride film is formed on a semiconductor wafer (hereinafter referred to as a wafer) by, for example, reacting dichlorosilane gas and ammonia gas at a process temperature of about 770 ° C. in a reduced pressure atmosphere (for example, Patent Document 1). However, it is necessary to develop a technique for lowering the film forming process temperature due to the above-described circumstances.
[0004]
On the other hand, for example, an apparatus shown in FIG. 8 has been proposed. The apparatus includes a processing chamber 11, a mounting table 12 having a built-in heating means, a window member 13, a gas supply unit 14 provided in the window member 13, a light source chamber 15, and a light source unit 16 such as an excimer light source. After mounting the substrate 10 on the mounting table 12, the pressure is reduced to a predetermined vacuum atmosphere, the processing gas is supplied from the gas supply unit 14 into the processing chamber 11, and the light source unit 16 irradiates the substrate 10 with light. A film is formed on the substrate 10. According to this method, the process gas is excited by light energy to assist the film forming reaction, and thus there is an advantage that the process temperature can be lowered.
[0005]
[Patent Document 1] JP 2001-308085 A: Paragraph 0018
[Patent Document 2] Japanese Patent Laid-Open No. 2002-305153: Paragraph 0029, FIG.
[Problems to be solved by the invention]
However, the apparatus shown in FIG. 9 can be applied as long as the reaction is such that silicon on the surface of the substrate 10 is oxidized and nitrided by the processing gas. For example, when film formation is performed by reaction of two kinds of source gases, Since the film is also formed on the window member 13, the transmission of light is hindered. For this reason, there is a problem that applicable gas types are limited.
[0006]
The present invention has been made under such a background. The purpose of the present invention is to reduce the film forming temperature by using light energy, and to prevent light transmission by film formation in the light transmission window. It is an object of the present invention to provide a film forming apparatus and a film forming method free from defects.
[0007]
[Means for Solving the Problems]
A film forming apparatus according to the present invention includes a first reaction container into which an object to be processed is carried, and a first gas supply unit that supplies a first source gas into the first reaction container, A first reaction section for adsorbing molecules of the first source gas on the surface of the object to be processed;
A second reaction container into which the object to be processed that has been processed in the first reaction section is carried, and a second source gas that is not formed by the gas alone, are supplied into the second reaction container. A second gas supply unit that supplies the light to the surface of the object to be processed, and a light irradiation unit that applies light energy to the surface of the object to be processed, and the first source gas molecules adsorbed on the surface of the object to be processed and the second A second reaction part that reacts the source gas molecules with the light energy to obtain a reaction product;
Transporting means for transporting the object processed in the first reaction section to the second reaction section.
[0008]
In the present invention, “reacting with light energy to obtain a reaction product” means to include a case where a reaction product is obtained using light energy together with other energy such as thermal energy. In the present invention, the object to be processed carried into the first reaction unit may be heated by the heating means, or the object to be treated carried into the second reaction unit may be heated by the heating means. It may be. The transport means includes a mounting unit on which a target object is mounted and placed in a processing atmosphere in the first reaction container or a processing atmosphere in the second reaction container, and the mounting part is used as the first reaction container. It is good also as a structure provided with the drive mechanism moved between the 1st and 2nd reaction container, and the seal part which airtightly blocks the opening part of the 1st reaction container or the opening part of the 2nd reaction container.
[0009]
In the present invention, for example, a first shutter mechanism that hermetically closes the opening of the first reaction vessel and a second shutter mechanism that hermetically closes the opening of the second reaction vessel are provided. The second source gas may be supplied to the object to be processed in the first reaction part instead of being supplied to the object to be processed in the second reaction part. Thus, the molecules of the first source gas and the molecules of the second source gas are adsorbed on the surface of the object to be processed.
[0010]
According to the present invention, since the reaction is promoted by light energy, the film formation temperature can be lowered. In addition, since a reaction vessel for applying light energy is provided separately from the reaction vessel for adsorbing the raw material gas, there is no problem that the light transmission window is formed to prevent the transmission of light.
[0011]
A film forming method according to the present invention includes a step of carrying an object to be processed into a first reaction vessel,
Supplying a first source gas into the first reaction vessel to adsorb molecules of the first source gas on the surface of the object to be processed;
Next, a step of conveying the object to be processed from the first reaction container into the second reaction container;
A first raw material gas that is not formed by the gas alone is supplied into the second reaction vessel and light energy is applied to the surface of the object to be processed, and is adsorbed on the surface of the object to be processed. A step of reacting the molecules of the source gas and the molecules of the second source gas with the light energy to obtain a reaction product,
A series of steps including the steps described above is performed at least once.
[0012]
As an example of the step of transporting the object to be processed from the first reaction container into the second reaction container, the opening of the first reaction container is opened by the first shutter mechanism and the object to be treated is removed from the first reaction container. A step of unloading the processing object and a step of closing the opening of the second reaction container by the second shutter mechanism after the object to be processed is loaded into the second reaction container are included.
[0013]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of a film forming apparatus of the present invention will be described. As shown in FIG. 1, the film forming apparatus includes a first reaction unit 2 and a second reaction unit 3 that are adjacent to each other in the lateral direction. The first reaction unit 2 includes an airtight first reaction vessel 21, and a wafer W whose gas showerhead 4 for supplying a first raw material gas is an object to be processed is disposed on the upper portion of the reaction vessel 21. It is provided so as to face the mounting table 62 to be mounted. The gas shower head 4 has a large number of gas holes 41 formed on the lower surface side, and supplies a first source gas, in this example, dichlorosilane (SiH 2 Cl 2) gas, through a gas supply pipe 42 which is a gas supply path. It is connected to a gas supply source 43 which is a source and a gas supply source 44 of nitrogen (N2) gas which is a dilution gas. V1 and V2 are valves, and 45 and 46 are mass flow controllers which are flow rate adjusting units. In this example, the gas shower head 4, the gas supply pipe 42, the gas supply sources 43 and 44, and the like constitute a first gas supply unit. ing. At the bottom of the first reaction vessel 21 is formed an opening 22 through which a wafer W, which is an object to be processed, is loaded and unloaded, and a first shutter mechanism 100 that closes the opening 22 is provided.
[0014]
The second reaction unit 3 includes an airtight second reaction vessel 31, and a gas supply pipe 5 for supplying a second source gas is provided above the reaction vessel 31. This gas supply pipe 5 is connected to a second source gas, in this example, a gas supply source 51 which is a supply source of ammonia (NH 3) gas and a gas supply source 52 of nitrogen gas. V3 and V4 are valves, and 53 and 54 are mass flow controllers which are flow rate adjusting units. In this example, the gas supply pipe 5, the gas supply sources 51 and 52, etc. constitute a second gas supply unit.
[0015]
Further, light irradiation means 32 is provided on the upper part of the second reaction vessel 31 so as to face the mounting table 62. In this example, the light irradiation means 32 is disposed in a house 33 whose inner surface is a light reflection surface. A barrier discharge excimer lamp 34 as a light source is arranged, and a light transmission window 30 is provided on the lower surface of the house 33. Reference numeral 33a denotes a plate for airtightly dividing the arrangement space of the light irradiation means 32 and the processing atmosphere. At the bottom of the second reaction vessel 31, an opening 35 is formed through which a wafer W, which is an object to be processed, is loaded and unloaded, and a second shutter mechanism 200 that closes the opening 35 is provided.
[0016]
Below the first reaction vessel 21 and the second reaction vessel 31, a transfer chamber 6 that is airtightly partitioned from the reaction vessels 21 and 31 is provided. Conveying means 60 for conveying between the container 21 and the second reaction container 31 is provided. As shown in FIG. 2, the transfer means 60 includes a lid 61 that hermetically closes the openings 22 and 35 and a heating means that is provided on the lid 61 and heats the wafer W. A mounting table 62, which is a mounting unit including a heater 62a made of a resistance heating element, and a drive mechanism 63 for moving the lid 61 up and down and moving in the lateral direction are provided. An O-ring 61a (see FIG. 1), which is a sealing material for hermetically sealing between the first reaction vessel 21 and the bottom wall of the second reaction vessel 31, is attached to the surface of the lid 61. Yes. As shown in FIG. 2, the drive mechanism 63 includes an arm 63a for holding the lid 61, an elevating mechanism 63b for elevating the arm 63a, a horizontal moving mechanism 63c for horizontally moving the elevating mechanism 63b, It has. The wafer W is floated on the mounting table 62 from the mounting surface so that the wafer W can be transferred between the transfer chamber 6 and the transfer arm in the preliminary chamber 71 that is airtightly partitioned through the gate valve G1. For example, three lifting pins (not shown) are incorporated.
[0017]
Further, in the transfer chamber 6, a first shutter mechanism 100 that drives a lid 23 for opening and closing the opening 22 of the first reaction vessel 21 so as to freely move up and down, and an opening 35 of the second reaction vessel 31. And a second shutter mechanism 200 for driving the lid 36 to open and close freely. O-rings 23a and 36a (see FIG. 1) are attached to the lids 23 and 36, respectively. Yes. FIG. 2 shows a lid body 23 and an elevating mechanism 23b for raising and lowering the lid body 23. The lower limit position of the lids 23 and 36 is set to be lower than the height position when the transport means 60 moves horizontally.
[0018]
The transfer chamber 6 and a reserve chamber 71 in which a transfer arm 72 made of, for example, an articulated arm is arranged are hermetically connected via a gate valve G1, and the reserve chamber 71 is connected to the reserve chamber 71 via a gate valve G2. The carrier chamber 73 is airtightly connected. The carrier chamber 73 includes an elevating table 74 on which a carrier C holding a predetermined number of wafers W in a shelf shape and a gate door GD that opens and closes an opening 75 for loading or unloading the carrier C.
[0019]
Further, exhaust pipes 81, 82, 83, and 84 are connected to the first reaction vessel 21, the second reaction vessel 31, the transfer chamber 6 and the spare chamber 71, respectively, and these exhaust pipes 81 to 84 each have automatic pressure adjustment. It is connected to a vacuum pump 8 which is a vacuum exhaust means via an APC (Automatic Pressure Control) gate valve 85 to 88 having a function and a shut-off function, and a pressure sensor is provided in each of the exhaust pipes 81, 82, 83 and 84. S1, S2, S3, and S4 are provided. The APC gate valves 85 to 88 are controlled by a pressure control signal output based on a sequence program in the control unit 80 and signals from the pressure sensors S1 to S4. As a result, the first reaction vessel 21 and the second reaction vessel 21 are controlled. The pressure in the reaction vessel 31, the transfer chamber 6, and the preliminary chamber 71 is adjusted to a preset pressure value.
[0020]
Furthermore, gas supply pipes 64, 76 and 77 for supplying nitrogen gas which is a purge gas are connected to the transfer chamber 6, the spare chamber 71 and the carrier chamber 73, respectively. These are connected to a gas supply source 78 of nitrogen gas through valves V5, V6 and V7, respectively.
[0021]
Next, the operation of the above film forming apparatus will be described. First, a carrier C in which a plurality of substrates to be processed, for example, wafers W are stored, is carried into the carrier chamber 73 from the outside, and the gate door GD is closed (see FIG. 1). At this time, the inside of the carrier chamber 73 is set to a nitrogen gas atmosphere and a positive pressure, and the gate valves G1 and G2 are closed to prevent air from entering the apparatus. Subsequently, after the gate valve G2 is opened, the wafer W in the carrier C is taken out by the transfer arm 72, loaded into the spare chamber 71, and the gate valve G2 is closed. Thereafter, the inside of the preliminary chamber 71 is controlled to a degree of vacuum equivalent to the degree of vacuum in the transfer chamber 6 by the APC gate valve 88.
[0022]
Thereafter, as shown in FIG. 3A, the gate valve G1 is opened, and the transfer arm 72 enters the transfer chamber 6 and cooperates with the lifting pins (not shown) provided on the mounting table 62 described above. The wafer W is transferred onto the mounting table 62 of the transfer means 60. At this time, the opening 22 of the first reaction chamber 21 and the opening 35 of the second reaction chamber 31 are closed by the lids 23 and 36, respectively. Then, after the gate valve G1 is closed, as shown in FIG. 3B, the transfer means 60 is retracted to the lower side of the second reaction vessel 31, and then the lid body 23 is lowered and the first reaction vessel 21 is lowered. Opening 22 is opened. Thereafter, the conveying means 60 moves horizontally to the lower side of the first reaction vessel 21 and further rises, so that the opening 22 is hermetically closed by the lid 61 of the conveying means 60. The symbols of the arrows in the figure indicate the order of operations.
[0023]
Thus, when the wafer W is loaded into the first reaction vessel 21 as shown in FIG. 3C, the environment in the first reaction vessel 21 is adjusted to the processing atmosphere. That is, the processing pressure is adjusted to a predetermined pressure of, for example, 1333 Pa (10 Torr) or less by the APC gate valve 85, and the wafer W is heated to, for example, 200 to 600 ° C. by the heater 62 a (see FIG. 1) built in the mounting table 62. Heated to the set processing temperature. When the dichlorosilane gas, which is the first source gas, is supplied from the gas shower head 4 into the first reaction vessel 21 while adjusting to the above processing pressure, the dichlorosilane molecules are physically adsorbed on the surface of the wafer W and are simply absorbed. A molecular layer is formed. FIG. 4A schematically shows this state.
[0024]
Thereafter, the supply of dichlorosilane gas is stopped, and an inert gas such as nitrogen gas, such as nitrogen gas, is supplied from the gas shower head 4 into the reaction vessel 21 for 30 seconds, and then the supply of nitrogen gas is stopped and the vacuum pump 8 is turned off. And Next, as shown in FIG. 5A, the conveying means 60 is lowered and further moved horizontally to the lower side of the second reaction vessel 31, and then the lid body 23 is raised to open the opening 22 of the first reaction vessel 21. Close. Subsequently, as shown in FIG. 5 (b), the conveying means 60 is horizontally moved to the lower side of the first reaction vessel 21, the lid body 36 is lowered to open the opening 35 of the second reaction vessel 31, The transfer means 60 is moved to carry the wafer W into the second reaction container 31, and the opening 35 is hermetically closed by the lid 61.
[0025]
Thus, when the wafer W is loaded into the second reaction vessel 31 as shown in FIG. 5C, the environment in the second reaction vessel 31 is adjusted to a processing atmosphere. That is, the processing pressure is adjusted to a predetermined pressure of, for example, 1333 Pa (10 Torr) or less by the APC gate valve 86 while flowing nitrogen gas from the gas supply pipe 5, and the wafer 62 is mounted by the heater 62 a (see FIG. 1) built in the mounting table 62. W is heated to a processing temperature set, for example, between 200-600 ° C. Then, ammonia gas as the second source gas is supplied from the gas supply pipe 5 into the second reaction vessel 31 while adjusting to the above processing pressure, and excimer light (vacuum ultraviolet) is irradiated to the wafer W from the excimer lamp 34. To do. Since the surface of the wafer W is given light energy by excimer light in addition to heat energy by heating of the heater 62a in the mounting table 62, as shown in FIG. 4B, molecules of dichlorosilane and ammonia React to form a monolayer of silicon nitride (SixNy) and by-produce ammonium chloride (NH 4 Cl).
[0026]
Thereafter, the supply of ammonia gas is stopped, and an inert gas such as nitrogen gas, for example, nitrogen gas, is supplied from the gas supply pipe 5 into the reaction vessel 31 for 30 seconds, and then the supply of nitrogen gas is stopped and the vacuum pump 8 is pulled off. And Next, as shown in FIG. 6A, the conveying means 60 is lowered and further horizontally moved to the lower side of the first reaction vessel 21, and then the lid body 36 is raised to open the opening 35 of the second reaction vessel 31. Close.
[0027]
After the monolayer film of silicon nitride is formed on the surface of the wafer W by the above steps, the cycle of the adsorption process of dichlorosilane gas and the reaction process of ammonia gas is repeated a plurality of times to stack silicon nitride molecules, and a predetermined film A silicon nitride film having a thickness of, for example, 1 nm to 50 nm is obtained. Although the above cycle may be performed a plurality of times, the wafer W may be carried out only once and the number of cycles is set according to the required film thickness. After a predetermined number of cycles have been executed for the wafer W, the gate valve G1 is opened as shown in FIG. 6B, and the wafer W placed on the transfer means 60 is transferred to the spare chamber 72 by the transfer arm 71. And is returned into the carrier C by the reverse process to that described above.
[0028]
The atmosphere when the wafer W is transferred between the transfer chamber 60 and the spare chamber 71 is not limited to the above example, and for example, the transfer chamber 60 and the spare chamber 71 may be an atmospheric pressure atmosphere using nitrogen gas. After the wafer W is loaded into the transfer chamber 6 and the gate valve G1 is closed, the transfer chamber 6 may be evacuated.
[0029]
According to the embodiment described above, the silicon nitride film is formed by promoting the reaction between dichlorosilane and ammonia by the light energy from the excimer lamp 34. That is, since a part of the energy required for the reaction is assisted by light energy, less heat energy is applied, and as a result, the processing temperature can be lowered. For this reason, the influence of thermal history can be suppressed on the film formed in the previous process in the semiconductor manufacturing process, and a material having a low melting point can be used as the electrode material, thereby increasing the degree of freedom in device design.
[0030]
Since the adsorption of dichlorosilane to the surface of the wafer W is performed in the first reaction vessel 21 and the reaction between ammonia and dichlorosilane is performed in the second reaction vessel 31 with the assistance of light energy, the second reaction is performed. In the container 31, the film is formed only on the wafer W, and the film of ammonia does not form by itself. As a result, the film is not formed in the light transmission window 30 through which the light from the excimer lamp 34 is transmitted. Therefore, even if the process is repeated, light energy can be supplied to the surface of the wafer W with the planned light intensity. Further, since film formation is assisted by light energy without using plasma, there is substantially no damage to the surface of the wafer W.
[0031]
The film forming apparatus of the present invention is not limited to the above-described configuration, and may be configured as shown in FIG. In this example, the first reaction unit 2 and the second reaction unit 3 are arranged one above the other, and transfer ports 24 and 37 for the wafer W are formed on the side surfaces of the first reaction vessel 21 and the second reaction vessel 31, respectively. The gate valves G3 and G4 are configured to open and close. Further, a transfer chamber 9 is provided adjacent to the first reaction vessel 21 and the second reaction vessel 31, and a transfer means 90 made up of, for example, an articulated arm is provided in the transfer chamber 9. . In this apparatus, after the wafer W is transferred from a preliminary chamber (not shown) to the transfer means 90, the wafer W is transferred from the transfer means 90 to the mounting table 25 in the first reaction vessel 21 and processed there. Is transferred to the mounting table 38 in the second reaction vessel 31 by the transfer means 90 and processed.
[0032]
As the first source gas for generating the silicon nitride film, tetrachlorosilane (SiCl4) gas, hexachlorodisilane (Si2Cl6) gas, Vistabutylbutylaminosilane (C8H22N2Si) gas, or the like can be used in addition to dichlorosilane gas. The present invention is not limited to the formation of a silicon nitride film, but can be applied to the case of forming other thin films. As a specific example, TEOS (tetraethyl silicate: Si (OC2H5) 4) is used as the first source gas and oxygen gas is used as the second source gas to form a silicon oxide film (SiO2 film) on the wafer. Filming process,
A process of forming a titanium nitride (TiN) film on the wafer using titanium tetrachloride (TiCl4) gas as the first source gas and ammonia gas as the second source gas;
A process of forming a titanium (Ti) film on a wafer by using titanium tetrachloride (TiCl4) gas as the first source gas and hydrogen (H2) gas as the second source gas.
[0033]
The first source gas may be a gas for forming a film by itself, but the second source gas may be ammonia in order to prevent reaction products from being deposited on the light transmission window 30. It is necessary that the gas is a gas that cannot be formed by itself, such as gas or oxygen gas. In addition, when the first source gas is physically adsorbed on the surface of the wafer W in the first reaction vessel 21, it is not always necessary to heat the wafer W. In the second reaction vessel 31, light Only the light energy may be applied to the surface of the wafer W without using the energy and the heating energy together. The object to be processed is not limited to a wafer but may be a glass substrate for a liquid crystal display, for example.
[0034]
【The invention's effect】
As described above, according to the present invention, since the reaction is promoted by light energy when forming a film on a target object using a source gas, the heating temperature of the substrate is lowered, that is, the film forming temperature is reduced. The temperature can be lowered, and damage to the surface of the object to be processed can be suppressed as compared with plasma irradiation or the like. Furthermore, since a reaction chamber for adsorbing the source gas to the substrate and a reaction chamber for irradiating the substrate with light energy to obtain a reaction product are separately provided, a light transmission window is formed and light is transmitted. There is no problem that transmission is hindered.
[Brief description of the drawings]
FIG. 1 is a longitudinal side view showing a film forming apparatus according to an embodiment of the present invention.
FIG. 2 is a perspective view showing a transfer unit used in the film forming apparatus.
FIG. 3 is an explanatory diagram showing a state in which a wafer is carried into a first reaction chamber in the film forming apparatus.
FIG. 4 is an explanatory view schematically showing a state of a substrate surface in a first reaction chamber and a state of a substrate surface in a second reaction chamber.
FIG. 5 is an explanatory diagram showing a state in which a wafer is transferred from a first reaction chamber to a second reaction chamber in the film forming apparatus.
FIG. 6 is an explanatory diagram showing a state in which a wafer is transferred from a first reaction chamber to a second reaction chamber in the film forming apparatus.
FIG. 7 is a cross-sectional view showing a film forming apparatus according to another embodiment of the present invention.
FIG. 8 is a schematic configuration diagram showing a conventional heat treatment apparatus.
[Explanation of symbols]
W Semiconductor wafer 2 1st reaction part 21 1st reaction container 22 Opening part 23 Lid body 24 Opening part 25 Mounting base 3 2nd reaction part 30 Light transmission window 34 Excimer lamp 35 Opening part 36 Lid body 37 Opening part 38 Mounting table 4 Gas shower head 5 Gas supply pipe 6 Transfer chamber 60 Transfer means 61 Lid 62 Mounting table 71 Preliminary chamber 72 Transfer arm 73 Carrier chamber C Carriers 81 to 84 Exhaust pipe 9 Transfer chamber 91 Transfer means

Claims (12)

A first reaction container into which the object to be processed is carried, and a first gas supply unit for supplying a first source gas into the first reaction container, and a first gas is provided on the surface of the object to be processed. A first reaction section for adsorbing source gas molecules;
A second reaction container into which the object to be processed that has been processed in the first reaction section is carried, and a second source gas that is not formed by the gas alone, are supplied into the second reaction container. A second gas supply unit that supplies the light to the surface of the object to be processed, and a light irradiation unit that applies light energy to the surface of the object to be processed, and the first source gas molecules adsorbed on the surface of the object to be processed and the second A second reaction part that reacts the source gas molecules with the light energy to obtain a reaction product;
A film forming apparatus comprising: a transport unit configured to transport the object processed in the first reaction unit to the second reaction unit. The film forming apparatus according to claim 1, further comprising a heating unit configured to heat the object to be processed carried into the first reaction unit. The film forming apparatus according to claim 1, further comprising a heating unit configured to heat the object to be processed carried into the second reaction unit. The first shutter mechanism that airtightly closes the opening of the first reaction vessel and the second shutter mechanism that airtightly closes the opening of the second reaction vessel are provided. 4. The film forming apparatus according to any one of 3 above. The transport means includes a mounting unit on which the object to be processed is mounted and placed in a processing atmosphere in the first reaction container or a processing atmosphere in the second reaction container, and the mounting part is connected to the first reaction container. 2. A drive mechanism that moves between the second reaction vessel and a seal portion that hermetically closes the opening of the first reaction vessel or the opening of the second reaction vessel. The film-forming apparatus in any one of 4 thru | or 4. The second gas supply unit is provided in the first reaction unit instead of being provided in the second reaction unit, and in the first reaction unit, molecules of the first source gas and the second are provided on the surface of the object to be processed. 6. The film forming apparatus according to claim 1, wherein molecules of the source gas are adsorbed. Carrying the object to be processed into the first reaction vessel;
Supplying a first source gas into the first reaction vessel to adsorb molecules of the first source gas on the surface of the object to be processed;
Next, a step of conveying the object to be processed from the first reaction container into the second reaction container;
A first raw material gas that is not formed by the gas alone is supplied into the second reaction vessel and light energy is applied to the surface of the object to be processed, and is adsorbed on the surface of the object to be processed. A step of reacting the molecules of the source gas and the molecules of the second source gas with the light energy to obtain a reaction product,
A film forming method characterized in that a series of steps including the steps described above is performed at least once. 8. The film forming method according to claim 7, wherein the step of adsorbing the molecules of the first source gas is performed while heating the object to be processed. 9. The film forming method according to claim 7, wherein the step of reacting with light energy to obtain a reaction product is performed while heating the object to be processed. The step of transporting the object to be processed from the first reaction container into the second reaction container is performed by opening the opening of the first reaction container by the first shutter mechanism and removing the object to be processed from the first reaction container. The method includes a step of unloading and a step of closing an opening of the second reaction container by a second shutter mechanism after the object to be processed is loaded into the second reaction container. 10. The film forming method according to any one of 9 above. The object to be processed is loaded into the first reaction vessel in a state of being placed on the placement unit, the first raw material gas molecules are adsorbed, and then the second raw material is left on the placement unit while being placed on the second placement unit. 11. The film forming method according to claim 7, wherein a reaction product of molecules of the first source gas and molecules of the second source gas is obtained by being carried into the reaction vessel. . The second source gas is supplied in the first reaction vessel instead of being supplied in the second reaction vessel, and the first source gas molecules and the surface of the object to be processed are supplied in the first reaction vessel. The film forming method according to claim 7, wherein molecules of the second source gas are adsorbed.

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