JP6475135B2 - Semiconductor device manufacturing method, gas supply method, substrate processing apparatus, and substrate holder - Google Patents

Description

  The present invention relates to a semiconductor device manufacturing method, a gas supply method, a substrate processing apparatus, and a substrate holder for manufacturing a semiconductor device by performing processing such as film formation on a substrate.

  In the substrate processing step in the substrate processing apparatus, a substrate holding tool on which a plurality of substrates are held is carried into a reaction furnace heated to a predetermined temperature at a predetermined speed, and a predetermined amount is applied to the substrate in the reaction furnace. A processing step of performing the processing, and an unloading step of unloading the processed substrate from the reaction furnace.

  Since the substrate transfer area including at least a region where the substrate is transferred to the substrate holder is an atmospheric atmosphere, an oxide film having a thickness of several to several tens of inches is naturally formed on the substrate in the carrying-in process. The growth of the oxide film formed on the surface of the substrate causes unexpected impurity contamination and voids at the interface, leading to a decrease in electrical characteristics, leading to a decrease in reliability of the final product device. Therefore, it can be said that the oxide film itself is an impurity from the viewpoint of the product device.

  Conventionally, the atmosphere in the substrate transfer area is replaced with an inert gas in order to suppress adhesion of impurities such as an oxide film to the substrate. Furthermore, there are cases in which the inside of the substrate transfer area is maintained at a low oxygen concentration. However, as described above, a slight amount of impurities such as an oxide film adhere to or form the substrate.

  Further, in the carry-out process, as in the carry-in process, since the substrate transfer area is an atmospheric atmosphere, impurities such as an oxide film are attached to or formed on the substrate surface.

  Therefore, with recent development of new materials aimed at miniaturization and performance improvement of devices, there is an urgent need to prevent impurities such as oxide films from adhering to and forming on the substrate.

  The present invention provides a technique for suppressing the adhesion of impurities to a substrate during loading and unloading of a substrate holder.

  The present invention includes a step of carrying a substrate holder into a processing chamber while holding a plurality of substrates, a step of processing the substrate in the processing chamber, and the substrate holder after processing the substrate in the processing chamber. An inert gas from a gas hole provided in the substrate holder while rotating the substrate holder in at least one of the step of carrying in and the step of unloading. The present invention relates to a technique for supplying the substrate.

  ADVANTAGE OF THE INVENTION According to this invention, the outstanding effect that it can suppress that an impurity adheres to a board | substrate at the time of carrying in and carrying out of a board | substrate holder is exhibited.

It is a perspective view which shows the substrate processing apparatus used suitably by embodiment of this invention. 1 is a schematic sectional elevation view showing a reaction furnace of a substrate processing apparatus suitably used in an embodiment of the present invention. It is a block diagram which shows the controller of the substrate processing apparatus used suitably by embodiment of this invention. It is a principal part enlarged view which shows the state by which the furnace port part of the reactor of the substrate processing apparatus used suitably by embodiment of this invention was obstruct | occluded. It is a principal part enlarged view which shows the state by which the furnace port part of the reactor of the substrate processing apparatus used suitably by embodiment of this invention was open | released. It is a sequence diagram explaining the substrate processing process used suitably by embodiment of this invention.

  Embodiments of the present invention will be described below with reference to the drawings.

  First, a substrate processing apparatus 1 and a reaction furnace 2 according to an embodiment of the present invention will be described with reference to FIGS. The substrate processing apparatus 1 according to the present invention is configured as an example of a semiconductor manufacturing apparatus used for manufacturing a semiconductor device.

  As shown in FIG. 1, a cassette stage 5 as a substrate storage container transfer member for transferring a cassette 4 as a substrate storage container to and from an external transfer device (not shown) is provided on the front side inside the housing 3. ing. A cassette elevator 6 as lifting means is provided on the rear side of the cassette stage 5, and a cassette transfer machine 7 as transport means is attached to the cassette elevator 6. On the rear side of the cassette elevator 6, a cassette shelf 8 is provided as a means for placing the cassette 4, and the cassette shelf 8 is provided on the slide stage 9 so as to be able to traverse.

  Further, a buffer cassette shelf 11 as a means for placing the cassette 4 is provided above the cassette shelf 8. Further, a clean unit 12 is provided on the rear side of the buffer cassette shelf 11, and the clean unit 12 is configured to circulate clean air inside the housing 3.

  A reaction furnace 2 is provided above the rear portion of the housing 3. In the reaction furnace 2, a processing chamber 14 for performing a predetermined process on a wafer 13 as a substrate is formed. A load lock chamber 15 as an airtight chamber (transfer area) is connected to a lower side of the reaction furnace 2 by a gate valve 16 as a gate valve. On the front surface of the load lock chamber 15, a load lock door 17 as a partitioning means is provided at a position facing the cassette shelf 8. The load lock chamber 15 is provided with a purge nozzle 18 for introducing a purge gas such as nitrogen gas into the load lock chamber 15.

  Inside the load lock chamber 15, a boat elevator 21 as a lifting mechanism that lifts and lowers a boat 19 as a substrate holder for holding a plurality of wafers 13 in a multi-stage in a horizontal posture between the processing chamber 14 and the load lock chamber 15. Is installed. A seal cap 22 as a lid is attached to the boat elevator 21, and the seal cap 22 supports the boat 19 vertically. A transfer elevator (not shown) is provided between the load lock chamber 15 and the cassette shelf 8, and a wafer transfer machine 23 is attached to the transfer elevator as a transfer means.

  The transport operation of the cassette transfer machine 7 and the like is controlled by the transport control means 24.

  Next, the details of the reaction furnace 2 will be described with reference to FIG.

  The reaction furnace 2 closes a reaction tube composed of an outer tube 25, a manifold 28 to which a gas exhaust pipe 26 and a gas supply pipe 27 are connected, and a furnace port portion 29 provided at the lower end of the manifold 28. And a heater cap 32 that heats the wafer 13 and has a heater cap and a heat insulating member (not shown).

  The processing chamber 14 is configured by the outer tube 25, the manifold 28, the seal cap 22, and the like.

  The gas supply pipe 27 extends through the manifold 28 from the side and extends to the upper part in the outer tube 25. The gas supply pipe 27 is provided with a main valve 33 for adjusting the flow rate of the processing gas supplied into the processing chamber 14, and the gas supply pipe 27 is branched into three forks on the upstream side of the main valve 33.

  The gas supply pipe 27a is provided with a first gas supply source 34 for supplying a first processing gas from the upstream side, a first MFC (mass flow controller) 35 as a gas flow rate control means, and a first valve 36. The gas supply pipe 27b is provided with a second gas supply source 37 for supplying a second processing gas from the upstream side, a second MFC 38, and a second valve 39. The gas supply pipe 27c is provided with a third gas supply source 41 that supplies a third processing gas from the upstream side, a third MFC 42, and a third valve 43.

  The source gas as the first processing gas supplied from the first gas supply source 34 is, for example, hexachlorodisilane (Si2 Cl6, abbreviated as HCDS) gas, and the second gas supplied from the second gas supply source 37. The reactive gas as the processing gas is, for example, NH3 (ammonia) gas, and the purge gas as the third processing gas supplied from the third gas supply source 41 is, for example, N2 (nitrogen) gas.

  In the reaction furnace 2, each process gas is supplied from a first gas supply source 34, a second gas supply source 37, and a third gas supply source 41, and is flowed by the first MFC 35, the second MFC 38, and the third MFC 42. After being adjusted and mixed in the gas supply pipe 27 through the first valve 36, the second valve 39, and the third valve 43, it is introduced from the gas supply pipe 27 through the main valve 33 from the upper part of the processing chamber 14. It has become like that.

  A first process gas supply system is mainly configured by the gas supply pipe 27a, the first gas supply source 34, the first MFC 35, and the first valve 36. In addition, a second process gas supply system is mainly configured by the gas supply pipe 27b, the second gas supply source 37, the second MFC 38, and the second valve 39. In addition, a third process gas supply system is mainly configured by the gas supply pipe 27 c, the third gas supply source 41, the third MFC 42, and the third valve 43.

  In the present specification, when the term “processing gas” is used, it includes only the first processing gas, includes only the second processing gas, includes only the third processing gas, or May include all of them. In addition, when the term processing gas supply system is used, when only the first processing gas supply system is included, when only the second processing gas supply system is included, when only the third processing gas supply system is included, Or it may include all of them.

  A gas exhaust pipe 26 communicates with the manifold 28. The gas exhaust pipe 26 includes a pressure sensor 44 as a pressure detector (pressure detection unit) for detecting the pressure in the processing chamber 14 and an APC (Auto Pressure Controller) valve 45 as a pressure regulator (pressure adjustment unit). A vacuum pump 46 as an evacuation device is connected via the evacuation device so that the evacuation can be performed so that the pressure in the processing chamber 14 becomes a predetermined pressure (degree of vacuum).

  The gas exhaust pipe 26 on the downstream side of the vacuum pump 46 is connected to a waste gas treatment device (not shown) or the like. The APC valve 45 can open and close the valve to evacuate / stop the evacuation in the processing chamber 14, and further adjust the valve opening to adjust the conductance to adjust the pressure in the processing chamber 14. It is an open / close valve. An exhaust system is mainly configured by the gas exhaust pipe 26, the pressure sensor 44, and the APC valve 45. A vacuum pump 46 may also be included in the exhaust system.

  In addition, a gas port 48 (see FIGS. 4 and 5) communicating with a boat internal passage, which will be described later, is formed at the rotating shaft 47 of the boat 19 and the lower end of the boat rotating mechanism 31, and a gas introduction pipe is connected to the gas port 48. The front end (downstream end) of 49 is connected. The base end of the gas introduction pipe 49 (the upstream end is connected to the seal cap 22 from below, and the base end of the gas introduction pipe 49 opens to the upper surface of the seal cap 22. A first gas valve 51 that is an on-off valve is provided.

  A first gas supply pipe 52 is provided through the lower surface of the manifold 28 and the furnace port portion 29 from above. A reaction gas supply source (not shown) for supplying a reaction gas such as NH3 gas is connected to the base end side (upstream side) of the first gas supply pipe 52, and the reaction gas is supplied from the reaction gas supply source. It is supposed to be done. Further, the tip (downstream end) of the first gas supply pipe 52 opens to the lower surface of the furnace port portion 29, and when the furnace port portion 29 is blocked by the seal cap 22 through an airtight member 53 such as an O-ring. The gas introduction pipe 49, the first gas supply pipe 52, and the gas port 48 communicate with each other in an airtight manner.

  Further, a second gas supply pipe 54, which is another gas supply pipe, is connected to the gas introduction pipe 49 downstream of the first gas valve 51. The second gas supply pipe 54 is provided with a second gas valve 55 that is an on-off valve, and is connected to a purge gas supply source (not shown) on the base end side (upstream side) of the second gas valve 55. . From the purge gas supply source, for example, an inert gas such as N2 gas is supplied as a purge gas for cooling.

  That is, the gas introduction pipe 49 is bifurcated, and the first gas valve 51 and the second gas valve 55 are provided on the upstream side of the branch point. One of the reaction gas from the first gas supply pipe 52 and the purge gas from the second gas supply pipe 54 is supplied to the gas port 48 via the first gas valve 51 and the second gas valve 55. .

  Further, a temperature sensor 57 (see FIG. 3), which will be described later, is installed in the outer tube 25, and the power supplied to the heater 32 is adjusted based on the temperature information detected by the temperature sensor 57. Thus, the temperature inside the processing chamber 14 is configured to have a desired temperature distribution.

  In FIG. 2, 58 is a controller as a control unit, which includes a heater 32, a boat rotation mechanism 31, a first MFC 35, a second MFC 38, a third MFC 42, a main valve 33, a first valve 36, a second valve 39, and a third valve. 43, the drive of the 1st gas valve 51, the 2nd gas valve 55, the APC valve 45, the vacuum pump 46, the boat elevator 21, etc. is controlled.

  Next, the details of the controller 58 will be described with reference to FIG.

  As shown in FIG. 3, the controller 58 as a control unit (control means) is a computer including a CPU (Central Processing Unit) 59, a RAM (Random Access Memory) 61, a storage device 62, and an I / O port 63. It is configured. The RAM 61, the storage device 62, and the I / O port 63 are configured to exchange data with the CPU 59 via the internal bus 64. For example, an input / output device 65 configured as a touch panel or the like is connected to the controller 58.

  The storage device 62 includes, for example, an EEPROM, a flash memory, an HDD (Hard Disk Drive), and the like. In the storage device 62, a control program that controls the operation of the substrate processing apparatus, a process recipe that describes the procedure and conditions of substrate processing to be described later, and the like are stored in a readable manner. The process recipe is a combination of the process so that a predetermined result can be obtained by causing the controller 58 to execute each procedure in the substrate processing process described later, and functions as a program. Hereinafter, the process recipe, the control program, and the like are collectively referred to simply as a program. When the term “program” is used in this specification, it may include only a process recipe alone, only a control program alone, or both. The RAM 61 is configured as a memory area (work area) in which programs and data read by the CPU 59 are temporarily stored.

  The I / O port 63 includes the first MFC to third MFC 35, 38, 42, the main valve 33 and the first valve to third valves 36, 39, 43, the pressure sensor 44, the APC valve 45, the vacuum pump 46, and the heater 32. The temperature sensor 57, the boat rotation mechanism 31, the boat elevator 21, the first and second gas valves 51, 55, and the like are connected.

  The CPU 59 constitutes the center of the controller 58 and is configured to read and execute a control program from the storage device 62 and to read a process recipe from the storage device 62 in response to an input of an operation command from the input / output device 65 or the like. ing. The CPU 59 adjusts the flow rates of various gases by the first MFC to the third MFC 35, 38, 42, the main valve 33, the first valve to the third valves 36, 39, 43, the first MFC 35, 38, and 42 in accordance with the contents of the read process recipe. , Opening / closing operation of the second gas valves 51, 55, opening / closing operation of the APC valve 45, pressure adjusting operation by the APC valve 45 based on the pressure sensor 44, starting and stopping of the vacuum pump 46, temperature adjusting operation of the heater 32 based on the temperature sensor 57 The boat rotation mechanism 31 is configured to control the rotation of the boat 19 and the rotation speed adjustment operation, the boat elevator 21 lift and lowering operation of the boat 19, and the like.

  The controller 58 is stored in an external storage device 66 (for example, a magnetic disk such as a magnetic tape, a flexible disk or a hard disk, an optical disk such as a CD or a DVD, a magneto-optical disk such as an MO, or a semiconductor memory such as a USB memory or a memory card). The above-described program can be configured by installing it in a computer. The storage device 62 and the external storage device 66 are configured as computer-readable recording media. Hereinafter, these are collectively referred to simply as a recording medium. When the term “recording medium” is used in this specification, it may include only the storage device 62 alone, may include only the external storage device 66 alone, or may include both.

  The means for supplying the program to the computer is not limited to supplying the program via the external storage device 66. For example, the program may be supplied via the communication line, the communication network, the communication system, or the like without using the external storage device 66.

  Next, in FIG. 4 and FIG. 5, the details of the lower part of the boat 19 and its peripheral part will be described.

  The boat rotation mechanism 31 includes a support portion 67 fixed to the boat elevator 21 and a rotation shaft 47 having a double tube structure. The rotary shaft 47 includes a central shaft 69 that is fixed so as not to rotate, and an outer ring shaft 73 that is configured to be rotatable between the support portion 67 and the central shaft 69 via bearings 71 and 72. ing. The upper end of the outer ring shaft 73 is fixed to the bottom plate 74 of the boat 19 so that the outer ring shaft 73 and the boat 19 rotate together via a worm gear 75 driven by a motor (not shown).

  The central shaft 69 is formed with an in-axis passage 76 that passes through the central shaft 69 in the axial direction, and the lower end of the in-axis passage 76 communicates with the gas port 48. The upper end of the center shaft 69 is inserted into a hole (not shown) formed in the lower surface of the center portion of the bottom plate 74, and the in-axis flow path 76 is a bottom plate formed on the bottom plate 74 in the bottom plate 74. It communicates with the inner flow path 77. Further, in-pillar channels 79 are respectively formed in the plurality of columns 78 provided in the boat 19 in the axial direction, and the column-internal channels 79 communicate with the channel plate 77 in the bottom plate.

  Further, the support column 78 is provided with gas holes 81 at a predetermined pitch in the height direction, and the in-support column flow path 79 communicates with the outside through the gas holes 81. The gas hole 81 is provided at a position facing the processing region of the wafer 13 held by the boat 19. As shown in FIG. 4 or FIG. 5, the flow path length of the in-pillar channel 79 is different for each column 78, and the height of the gas hole 81 is different for each column 78. However, the configurations of the gas holes 81 and the in-pillar channel 79 are not limited to the embodiment shown in FIG. 4 or 5 respectively. For example, the flow path 79 in the column may have the same configuration for each column 78, and the gas hole 81 may be provided at the same height for each column 78. In short, the arrangement of the gas holes 81 and the configuration of the in-pillar channel 79 are arbitrarily determined. Needless to say, the diameter of the gas hole 81 is also arbitrarily determined. For example, the gas holes 81 in the same column 78 need not have the same diameter, and may be different in the vertical direction.

  The gas introduced from the first gas supply pipe 52 or the second gas supply pipe 54 into the gas introduction pipe 49 circulates in the in-axis flow path 76, the bottom plate flow path 77, and the support column flow path 79. It is supplied to the surface of the wafer 13 through the hole 81. Therefore, since the gas can be directly supplied to the surface of the wafer 13 from the boat 19 including the in-axis channel 76, the bottom plate channel 77, the column channel 79, and the gas hole 81, for example, an inert gas is supplied. Thus, oxide film formation can be suppressed. Further, since the gas can be directly supplied, the rolling-up of particles can be suppressed. Further, the cooling efficiency is improved by efficiently spraying the inert gas onto the wafer 13 when the substrate after processing is cooled.

  Magnetic fluid seals 82 and 83 are provided between the outer ring shaft 73 and the support portion 67 and between the center shaft 69 and the outer ring shaft 73, respectively. A space between the support 67 and the center shaft 69 and the outer ring shaft 73 is hermetically sealed. Further, a fluid seal (not shown) is also formed on the central shaft 69 and the bottom plate 74, and the space between the central shaft 69 and the bottom plate 74 is hermetically sealed. Accordingly, the gas is supplied to the wafer 13 while the boat 19 is rotated from the boat 19 including the in-axis passage 76, the bottom plate passage 77, the strut passage 79, and the gas hole 81. Therefore, the gas can be supplied uniformly over the entire surface of the wafer 13.

  The gas supply mechanism is constituted by the gas port 48, the gas introduction pipe 49, the first gas supply pipe 52, the second gas supply pipe 54, the first gas valve 51, the second gas valve 55, and the like. The gas supply mechanism may include a boat 19.

  Next, referring to the sequence diagram of FIG. 6, as a process of manufacturing a semiconductor device (device) using the substrate processing apparatus 1, a process of forming a film on the substrate (hereinafter also referred to as a film forming process) A sequence example will be described. Here, an example in which a film is formed on the wafer 13 by alternately supplying the first processing gas (raw material gas) and the second processing gas (reaction gas) to the wafer 13 as a substrate. explain.

  Hereinafter, hexachlorodisilane (Si2 Cl6, abbreviated as HCDS) gas is used as a source gas, ammonia (NH3) gas is used as a reaction gas, and a silicon nitride film (Si3 N4 film, hereinafter also referred to as SiN film) is formed on the wafer 13. An example will be described. In the following description, the operation of each part constituting the substrate processing apparatus 1 is controlled by the controller 58.

  In the film forming process in the present embodiment, a step of supplying HCDS gas to the wafer 13 in the processing chamber 14, a step of removing HCDS gas (residual gas) from the processing chamber 14, and the processing chamber 14 By performing a predetermined number of times (one or more times) of individually performing the process of supplying NH3 gas to the inner wafer 13 and the process of removing NH3 gas (residual gas) from the processing chamber 14, A SiN film is formed on the wafer 13.

  In the present specification, the film forming sequence described above may be shown as follows for convenience. The same notation is used in the following description of the modified examples and other embodiments.

  (HCDS → NH3) × n → SiN

  In this specification, when the word “wafer” is used, it means “wafer itself” or “a laminated body (aggregate) of a wafer and a predetermined layer or film formed on the surface thereof”. ) ", That is, a predetermined layer or film formed on the surface may be referred to as a wafer. In addition, in this specification, when the term “wafer surface” is used, it means “the surface of the wafer itself (exposed surface)” or “a predetermined layer or film formed on the wafer”. Or the like, that is, the outermost surface of the wafer as a laminate.

  Therefore, in this specification, the phrase “supplying a predetermined gas to the wafer” means “supplying a predetermined gas to the surface (exposed surface) of the wafer itself”. In other cases, it may mean that “a predetermined gas is supplied to a layer, a film, or the like formed on the wafer, that is, to the outermost surface of the wafer as a laminated body”. In addition, in this specification, when “describe a predetermined layer (or film) on the wafer” is described, “determine a predetermined layer (or film) on the surface (exposed surface) of the wafer itself”. Means "to form a predetermined layer (or film) on the layer or film formed on the wafer, that is, on the outermost surface of the wafer as a laminate". There is a case.

  Further, in this specification, the term “substrate” is also synonymous with the term “wafer”.

(Wafer charge and boat load)
In the wafer charging process, a plurality of wafers 13 are loaded into the boat 19 (wafer charging). At this time, the second gas valve 55 may be opened, and N 2 gas (purge gas) may be supplied from the second gas supply pipe 54 directly to the region where the wafer 13 is held through the gas hole 81.

  In the boat loading process, the boat 19 is lifted by the boat elevator 21 and is carried into the processing chamber 14 from the load lock chamber 15 (boat loading). The seal cap 22 is in a state in which the furnace port portion 29 is airtightly closed (sealed) via the airtight member 53, and the gas introduction pipe 49 and the first gas supply pipe 52 communicate with each other. At this time, the second gas valve 55 is opened until the furnace port 29 is closed by the seal cap 22 after the boat 19 is lifted, and N2 gas (purge gas) flows from the second gas supply pipe 54 into the shaft. The gas is directly supplied to the wafer 13 from the gas hole 81 through the passage 76, the bottom plate flow passage 77, and the support post flow passage 79.

  In the boat loading process, the boat rotation mechanism 31 starts to rotate the boat 19 and the wafer 13. That is, the boat 19 and the wafer 13 are raised while being rotated and are carried into the processing chamber 14. At this time, only the outer ring shaft 73 rotates integrally with the boat 19 and the central shaft 69 does not rotate. The boat 19 and the wafer 13 are continuously rotated by the boat rotating mechanism 31 at least until the processing on the wafer 13 is completed.

(Pressure adjustment and temperature adjustment)
When the loading of the boat 19 into the processing chamber 14 is completed, the second gas valve 55 is closed, and the vacuum pump 46 is set so that the processing chamber 14, that is, the space where the wafer 13 exists, has a predetermined pressure (degree of vacuum). Is evacuated (reduced pressure). At this time, the pressure in the processing chamber 14 is measured by the pressure sensor 44, and the APC valve 45 is feedback-controlled based on the measured pressure information. The vacuum pump 46 is always operated until at least the processing for the wafer 13 is completed.

  Further, the wafer 13 in the processing chamber 14 is heated by the heater 32 so as to reach a predetermined temperature. At this time, the current supply to the heater 32 is feedback-controlled based on the temperature information detected by the temperature sensor 57 so that the inside of the processing chamber 14 has a predetermined temperature distribution. The heating of the processing chamber 14 by the heater 32 is continuously performed at least until the processing on the wafer 13 is completed.

(Deposition process)
When the temperature in the processing chamber 14 is stabilized at a preset processing temperature, the following two steps, that is, steps 1 to 2 are sequentially executed.

[Step 1]
In this step, HCDS gas is supplied to the wafer 13 in the processing chamber 14.

  First, the first valve 36 and the main valve 33 are opened, and HCDS gas is supplied into the gas supply pipe 27. The flow rate of the HCDS gas is adjusted by the first MFC 35, supplied into the processing chamber 14 through the gas supply pipe 27, and exhausted from the gas exhaust pipe 26.

  At this time, the third valve 43 is opened simultaneously with the first valve 36, and N 2 gas is allowed to flow into the gas supply pipe 27. The flow rate of the N2 gas is adjusted by the third MFC 42, supplied into the processing chamber 14 together with the HCDS gas, and exhausted from the gas exhaust pipe 26. By supplying HCDS gas to the wafer 13, a silicon (Si) -containing layer having a thickness of, for example, less than one atomic layer to several atomic layers is formed as the first layer on the outermost surface of the wafer 13.

  The first gas valve 51 and the second gas valve 55 are closed, and the supply of gas from the gas hole 81 is stopped. In order to prevent the HCDS gas from entering the support column 78 through the gas hole 81, it is possible to open the second gas valve 55 and supply N2 gas.

  After the first layer is formed, the first valve 36 is closed and the supply of HCDS gas is stopped. At this time, the APC valve 45 is kept open, the inside of the processing chamber 14 is evacuated by the vacuum pump 46, and HCDS gas remaining in the processing chamber 14 or contributing to the formation of the first layer is removed. The processing chamber 14 is evacuated. At this time, the second gas valve 55 is opened and the third valve 43 is kept open, and the supply of N2 gas into the processing chamber 14 is maintained. The N2 gas, which is an inert gas, acts as a purge gas, thereby enhancing the effect of exhausting the gas remaining in the processing chamber 14 from the processing chamber 14. In particular, the effect of removing the HCDS gas (residual gas) on the surface of the wafer 13 can be expected.

  At this time, the gas remaining in the processing chamber 14 may not be completely discharged, and the processing chamber 14 may not be completely purged. If the amount of gas remaining in the processing chamber 14 is very small, no adverse effect will occur in the subsequent step 2. Further, the flow rate of the N2 gas supplied into the processing chamber 14 does not need to be large. For example, by supplying N2 gas having a volume equal to the volume of the outer tube 25 (processing chamber 14), step 2 can be performed. Thus, purging can be performed to such an extent that no adverse effects occur. Thus, by not completely purging the inside of the processing chamber 14, the purge time can be shortened, the throughput can be improved, and the consumption of N2 gas can be suppressed to the necessary minimum.

[Step 2]
After step 1 is completed, NH 3 gas is supplied to the wafer 13 in the processing chamber 14, that is, the first layer formed on the wafer 13. The NH3 gas is activated by heat and supplied to the wafer 13.

  In this step, the second valve 39 is opened, the NH 3 gas is supplied into the gas supply pipe 27 while the flow rate is adjusted by the second MFC 38, the second gas valve 55 is closed, and the first gas valve 51 is opened to introduce gas. NH 3 gas is supplied into the tube 49. NH 3 gas is supplied into the processing chamber 14 through the gas supply pipe 27 and the gas hole 81, and NH 3 gas is supplied to the wafer 13 in the process of being exhausted from the gas exhaust pipe 26. . In the present embodiment, the NH 3 gas between the wafers 13 can be evenly supplied by making the positions of the gas holes 81 provided in the columns 78 different.

  The NH3 gas supplied to the wafer 13 reacts with at least a part of the first layer formed on the wafer 13 in Step 1, that is, the Si-containing layer. Thereby, the first layer is thermally nitrided by non-plasma and is changed (modified) into a second layer containing Si and N, that is, a silicon nitride layer (SiN) layer. At this time, plasma excited NH3 gas is supplied to the wafer 13, and the first layer is plasma-nitrided to change the first layer into the second layer (SiN layer). May be.

  After the second layer is formed, the second valve 39 and the first gas valve 51 are closed, and the supply of NH3 gas is stopped. Thereafter, the third valve 43 and the second gas valve 55 are opened, and the NH 3 gas and the reaction sub-reactor remaining in the processing chamber 14 or contributing to the formation of the second layer are processed by the same processing procedure as in Step 1. The product is discharged from the processing chamber 14. At this time, it is the same as in step 1 that the gas remaining in the processing chamber 14 does not have to be completely discharged.

(Performed times)
A SiN film having a predetermined composition and a predetermined film thickness can be formed on the wafer 13 by performing a predetermined number of times (n times) a cycle in which the above-described two steps are performed non-simultaneously, that is, without being synchronized. The above-described cycle is preferably repeated a plurality of times. That is, it is formed by stacking the second layer (SiN layer) by making the thickness of the second layer (SiN layer) formed when the above cycle is performed once smaller than a predetermined thickness. It is preferable to repeat the above cycle a plurality of times until the thickness of the SiN film reaches a predetermined thickness.

As processing conditions when performing the film forming process, for example,
Processing temperature (wafer temperature): 250 ° C. to 700 ° C.,
Processing pressure (processing chamber pressure): 1 Pa to 4000 Pa,
HCDS gas supply flow rate: 1 sccm to 2000 sccm,
NH3 gas supply flow rate: 100 sccm to 10,000 sccm,
N2 gas supply flow rate: 100 sccm to 10000 sccm,
Is exemplified. By setting each processing condition to a value within the respective range, the film forming process can be appropriately advanced.

(Purge and return to atmospheric pressure)
After the film forming process is completed, the third valve 43 is opened, N2 gas is supplied from the gas supply pipe 27 into the processing chamber 14, the second gas valve 55 is opened, and N2 gas is supplied from the gas hole 81 to the processing chamber. 14 is exhausted from the gas exhaust pipe 26. N2 gas acts as a purge gas. As a result, the inside of the processing chamber 14 is purged, and the gas and reaction byproducts remaining in the processing chamber 14 are removed from the processing chamber 14 (purging). Thereafter, the atmosphere in the processing chamber 14 is replaced with an inert gas (inert gas replacement), and the pressure in the processing chamber 14 is returned to normal pressure (return to atmospheric pressure).

(Boat unloading and cooling, wafer discharge)
In the boat unloading step, the seal cap 22 is lowered by the boat elevator 21 after the processing chamber 14 is returned to atmospheric pressure, and the furnace port portion 29 is opened. At this time, the second gas valve 55 is opened, and N2 gas is supplied from the gas hole 81. Then, in a state where the processed wafer 13 is supported by the boat 19, it is carried out from the furnace port portion 29 to the outside of the outer tube 25 (load lock chamber 15).

  At this time, the boat 19 and the wafer 13 are continuously rotated by the boat rotating mechanism 31. That is, the boat 19 is lowered while being rotated while the N2 gas is directly supplied to the entire surface of the wafer 13. Therefore, the atmosphere does not touch the surface of the wafer 13 as much as possible, and the generation of an oxide film on the surface of the wafer 13 is suppressed.

  In the cooling process for cooling the wafer 13 to a temperature at which the wafer 13 can be transferred, the boat 19 is continuously rotated by the boat rotation mechanism 31 and the supply of N2 gas from the gas holes 81 to the surface of the wafer 13 is performed. Time can be shortened and generation of an oxide film on the surface of the wafer 13 can be suppressed. When the cooling process is completed, that is, when the temperature of the wafer 13 is cooled to a temperature at which the wafer 13 can be transferred, the rotation of the boat 19 is stopped.

  Finally, in the wafer discharge process, after the processed wafer 13 is taken out from the boat 19, the second gas valve 55 is closed to stop the supply of N 2 gas from the gas hole 81, and the film formation of the wafer 13 is performed. The process ends. Before the wafer discharge process, the second gas valve 55 may be closed to stop the supply of N2 gas from the gas hole 81.

  As described above, in the present embodiment, the shaft shaft 76, the bottom plate 74, and the support column 78 are formed with the in-axis flow channel 76, the bottom plate flow channel 77, and the support column flow channel 79, respectively. A gas (for example, N2 gas) flowing through the flow path 77 and the flow path 79 in the column is directly jetted onto the wafer 13 through a gas hole 81 formed in the column 78.

  Therefore, in the boat loading process and the boat unloading process, that is, when the boat 19 is carried in and out, the surface of the wafer 13 is not exposed to air, and the formation of an oxide film on the surface of the wafer 13 is suppressed. be able to.

(Effects of this embodiment)
According to the present embodiment, one or more effects shown below can be obtained.

  (a) Even if the atmosphere around the boat 19 is an air atmosphere, the amount of the inert gas used can be reduced when the atmosphere in the load lock chamber 15 is replaced with an inert gas to form a low oxygen concentration atmosphere. The replacement time can be shortened, and impurities can be prevented from adhering to the wafer 13. Furthermore, the formation of an oxide film on the surface of the wafer 13 can be suppressed.

  (b) Since the inert gas is directly injected onto the wafer 13, the distance between the inert gas outlet and the wafer 13 is reduced. Therefore, in the cooling process, the cooling efficiency can be improved and the cooling time of the wafer 13 can be shortened. In addition, by directly injecting the inert gas onto the wafer 13, the flow rate of the inert gas can be reduced, and the rolling-up of particles can be prevented. Furthermore, even if a small amount of deposits adhere to the wafer 13, it can be blown off, and the deposits on the wafer 13 can be prevented.

  (c) Since the rotation shaft 47 has a double tube structure of the center shaft 69 and the outer ring shaft 73 and the outer ring shaft 73 is rotatable with respect to the fixed center shaft 69, the gas hole 81 of the support column 78 is provided. It is possible to rotate the boat 19 while supplying the gas from the surface, and the gas supplied to the surface of the wafer 13 can be adjusted uniformly, so that the quality of the film generated on the wafer 13 can be improved.

  (d) Since the height position where the gas hole 81 is formed is different for each column 78, it is possible to supply a uniform gas to each wafer 13, and the quality of the film generated on each wafer 13 Can be made even.

  (e) The above effect is the same when using a gas other than HCDS gas as the source gas, when using a gas other than NH3 gas as the reaction gas, or when using an inert gas other than N2 gas as the purge gas. Can get to.

(Other embodiments)
In the present embodiment, various gases are supplied to the wafer 13 through the gas holes 81, but the atmosphere in the processing chamber 14 may be exhausted through the gas holes 81. In this case, on the downstream side of the first gas valve 51 and the second gas valve 55, an exhaust pipe is connected to the gas introduction pipe 49, and the exhaust gas provided in the exhaust pipe is closed with the first gas valve 51 and the second gas valve 55 closed. What is necessary is just to operate a mechanism. Therefore, since it is expected that the influence of residual gas on the wafer 13 is efficiently removed, the film quality of the wafer 13 can be expected to be improved, and further, the throughput can be expected to be improved.

  In the present embodiment, the supply of various gases from the gas supply pipe 27 and the supply of various gases from the gas holes 81 are performed in parallel, but the source gas is further supplied from the first gas supply pipe 52. You may comprise like this. In this case, since HCDS gas, NH3 gas, and N2 gas can be selectively supplied from both the gas supply pipe 27 and the first gas supply pipe 52, the quality of the film formed on the wafer 13 can be expected to be improved. On the other hand, various gases may be supplied only from the gas holes 81. In this case, the first gas supply pipe 52 may be branched upstream so that the HCDS gas, NH3 gas, and N2 gas can be selectively supplied from the first gas supply pipe 52. In this case, the gas supply pipe 27 and the like can be omitted, and the apparatus configuration can be simplified.

  Further, various gases can be supplied only from the gas holes 81, and the atmosphere in the processing chamber 14 can be exhausted from the gas holes 81, so that the gas exhaust pipe 26 and the like can be omitted, and the apparatus configuration can be reduced. It can be further simplified.

  In the above, the Example of this invention was described concretely. However, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the invention. For example, it goes without saying that a film may be formed on the wafer 13 by simultaneously supplying the source gas and the reaction gas to the wafer 13 as a substrate.

  For example, in the above-described embodiment, the example in which the HCDS gas is used as the source gas has been described, but the present invention is not limited to such an embodiment. For example, as source gases, in addition to HCDS gas, monochlorosilane (SiH3 HCl, abbreviated: MCS) gas, dichlorosilane (SiH2 Cl2, abbreviated: DCS) gas, trichlorosilane (SiHCl3, abbreviated: TCS) gas, tetrachlorosilane, Inorganic halosilane source gases such as silicon tetrachloride (SiCl4, abbreviation: STC) gas, octachlorotrisilane (Si3 Cl8, abbreviation: OCTS) gas, trisdimethylaminosilane (Si [N (CH3) 2] 3 H, abbreviation : 3DMAS) gas, tetrakisdimethylaminosilane (Si [N (CH3) 2] 4, abbreviation: 4DMAS) gas, bisdiethylaminosilane (Si [N (C2H5) 2] 2 H2, abbreviated: BDEAS) gas, bisteria butyl Aminosilane (SiH2 [NH (C4 H9)] 2 Abbreviation: BTBAS) may be used halogen group-free amino based such as a gas (amine) silane source gas. In addition, as the source gas, halogen group-free inorganic silane source gas such as monosilane (SiH4, abbreviation: MS) gas, disilane (Si2 H6, abbreviation: DS) gas, trisilane (Si3 H8, abbreviation: TS) gas, etc. Can be used.

  For example, in the above-described embodiment, an example in which NH3 gas is used as the reaction gas has been described. However, the reaction gas in the present invention is not limited to NH3 gas. For example, as the reaction gas, hydrogen nitride gas such as diazene (N2 H2) gas, hydrazine (N2 H4) gas, N3 H8 gas, gas containing these compounds, etc. can be used in addition to NH3 gas. Examples of the reaction gas include triethylamine ((C2 H5) 3 N, abbreviation: TEA) gas, diethylamine ((C2 H5) 2 NH, abbreviation: DEA) gas, monoethylamine (C2 H5 NH2, abbreviation: MEA) gas, and the like. Methylamines such as ethylamine gas, trimethylamine ((CH3) 3N, abbreviation: TMA) gas, dimethylamine ((CH3) 2NH, abbreviation: DMA) gas, monomethylamine (CH3NH2, abbreviation: MMA) gas, etc. System gases can be used. As the reaction gas, an organic hydrazine-based gas such as trimethylhydrazine ((CH3) 2N2 (CH3) H, abbreviated as TMH) gas can be used.

  For example, in the above-described embodiment, an example in which an SiN film is formed using HCDS gas as a source gas and a nitrogen (N) -containing gas (nitriding gas) such as NH3 gas as a reaction gas has been described. The present invention is not limited to such an embodiment. For example, in addition to or in addition to these, oxygen (O) containing gas (oxidizing gas) such as oxygen (O2) gas, carbon (C) containing gas such as propylene (C3 H6) gas, boron trichloride (BCl3) Using a boron (B) -containing gas such as a gas, a SiO film, a SiON film, a SiOCN film, a SiOC film, a SiCN film, a SiBN film, a SiBCN film, or the like can be formed. In addition, the order which flows each gas can be changed suitably.

  The substrate processing apparatus 1 in this embodiment can be applied not only to a semiconductor manufacturing apparatus but also to an apparatus for processing a glass substrate such as an LCD apparatus.

  In the above-described embodiment, an example in which a film is deposited on the wafer 13 has been described. However, the present invention is not limited to such an embodiment. For example, the substrate processing apparatus 1 according to the present embodiment is also suitably applied to the wafer 13 or a film formed on the wafer 13 when processing such as oxidation, diffusion, annealing, and etching is performed. It goes without saying that it is possible.

(Preferred embodiment of the present invention)
Hereinafter, preferred embodiments of the present invention will be additionally described.

(Appendix 1)
According to one aspect of the invention,
A substrate holder for holding a plurality of substrates, a processing chamber in which the substrate holder is carried in and out, and a gas hole provided in the substrate holder for supplying an inert gas to the substrate. Controlling the gas supply mechanism, the rotation mechanism for rotating the substrate holder, the gas supply mechanism, and the rotation mechanism, respectively, and holding the substrate in at least one of loading and unloading of the substrate holder There is provided a substrate processing apparatus including a control unit that controls to supply an inert gas to the substrate from the gas hole provided in the substrate holder while rotating the tool.

(Appendix 2)
In the substrate processing apparatus according to appendix 1, preferably,
A plurality of the gas holes are provided at positions facing a substrate processing region where the substrate is processed.

(Appendix 3)
In the substrate processing apparatus according to appendix 2, preferably,
The gas hole is provided at a position where the height differs for each column.

(Appendix 4)
In the substrate processing apparatus according to appendix 1, preferably,
A raising / lowering mechanism for raising and lowering the substrate holder; a seal cap for raising and lowering together with the substrate holder by the raising / lowering mechanism; and opening and closing a lower side of the reaction furnace; and provided on a lower side of the seal cap The rotation mechanism is configured to have a fixed shaft that is fixed to supply the inert gas to the substrate holder and a rotation shaft that rotates the substrate holder.

(Appendix 5)
In the substrate processing apparatus according to appendix 4, preferably,
A gas port is further provided on the lower side of the rotation mechanism, and the gas supplied from the gas port is supplied to a gas hole provided in a support column of the substrate holder through a space in the fixed shaft. It is configured.

(Appendix 6)
In the substrate processing apparatus according to appendix 5, preferably,
A furnace port portion for connecting the processing chamber and the seal cap is further provided, a distal end of a gas introduction pipe is connected to the gas port, and a proximal end of the gas introduction pipe is opened to an upper surface of the seal cap. The gas supply pipe is provided on the furnace port side, and the opening at the front end of the gas supply pipe is airtight with the base end opening of the gas introduction pipe when the seal cap is connected to the furnace port. It is comprised so that it may provide downward in the position which communicates.

(Appendix 7)
In the substrate processing apparatus according to appendix 6, preferably,
The gas introduction pipe is branched into a pipe facing the seal cap and another gas supply pipe, and an open / close valve is provided in each pipe.

(Appendix 8)
In the substrate processing apparatus according to appendix 7, preferably,
When the seal cap is connected to the furnace port, an on-off valve in a pipe toward the seal cap is opened, an on-off valve in the other gas supply pipe is closed, the gas supply pipe, the gas introduction pipe, It is configured to communicate with the gas port.

(Appendix 9)
In the substrate processing apparatus according to appendix 7, preferably,
While the substrate holder is being carried out of the processing chamber and carried into the processing chamber by the lifting mechanism, the on-off valve in the pipe toward the seal cap is closed and the on-off valve in the other gas supply pipe is opened. The other gas supply pipe, the gas introduction pipe, and the gas port are communicated with each other.

(Appendix 10)
In the substrate processing apparatus according to appendix 8 or appendix 9, preferably,
The gas supplied from the other gas supply pipe is an inert gas, and the gas supplied from the gas supply pipe is a reaction gas.

(Appendix 11)
In the substrate processing apparatus according to appendix 1, preferably,
The control unit is configured to transfer a reaction gas from a gas hole provided in the substrate holder while rotating the substrate holder while the substrate holder is carried into a processing chamber while holding a plurality of substrates. It is configured to supply to.

(Appendix 12)
According to another aspect of the invention,
A substrate holder that is carried into and out of a processing chamber in a state where a plurality of substrates are held in a groove formed in a support, and is loaded into the processing chamber and carried out of the processing chamber In at least one of them, there is provided a substrate holder configured to supply a predetermined gas to the substrate from a gas hole provided in the support column.

(Appendix 13)
According to yet another aspect of the invention,
A step of carrying a substrate holder into a processing chamber while holding a plurality of substrates; a step of processing the substrate in the processing chamber; and a step of unloading the substrate holder from the processing chamber after processing the substrate A method of manufacturing a semiconductor device comprising: a gas hole provided in the substrate holder while rotating the substrate holder in at least one of the loading step and the unloading step. A method for manufacturing a semiconductor device for supplying an active gas to the substrate is provided.

(Appendix 14)
In the method for manufacturing a semiconductor device according to appendix 13, preferably,
In the step of processing the substrate, a reaction gas is supplied to the substrate from a gas hole provided in the substrate holder while rotating the substrate holder.

(Appendix 15)
According to yet another aspect of the invention, a computer includes:
A procedure for carrying a substrate holder into a processing chamber while holding a plurality of substrates, a procedure for processing the substrate in the processing chamber, and a procedure for unloading the substrate holder from the processing chamber after processing the substrate In at least one of the carrying-in procedure and the carrying-out procedure, an inert gas is supplied from a gas hole provided in the substrate holder while rotating the substrate holder. A program to be supplied to the substrate is provided.

(Appendix 16)
According to yet another aspect of the invention, a computer includes:
A procedure for carrying a substrate holder into a processing chamber while holding a plurality of substrates, a procedure for processing the substrate in the processing chamber, and a procedure for unloading the substrate holder from the processing chamber after processing the substrate And a computer-readable recording medium in which a program for executing the above is recorded, wherein the substrate holder is rotated while rotating the substrate holder in at least one of the loading procedure and the unloading procedure. A computer-readable storage medium is provided for storing a program for supplying an inert gas to the substrate from a provided gas hole.

(Appendix 17)
According to yet another aspect of the invention,
The substrate holding in at least one of a step of carrying a substrate holder into a processing chamber while holding a plurality of substrates and a step of carrying out the substrate holder from the processing chamber after processing the substrate A gas supply method for supplying an inert gas to the substrate from a gas hole provided in the substrate holder while rotating the tool is provided.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Reactor 13 Wafer 14 Processing chamber 19 Boat 31 Boat rotation mechanism 58 Controller 78 Prop 81 Gas hole

Claims (11)

A substrate holder that holds a plurality of substrates, a processing chamber in which the substrate holder is carried in and out, a seal cap that opens and closes the lower side of the processing chamber, and a space between the processing chamber and the seal cap A furnace port portion to be connected, a gas supply mechanism configured to supply gas to the substrate from a gas hole provided in the substrate holder, a rotation mechanism for rotating the substrate holder, and a lower part of the rotation mechanism In a substrate processing apparatus having a gas port for supplying gas to the gas holes, and a controller for controlling the gas supply mechanism and the rotation mechanism, respectively, in a state where a plurality of substrates are held. A semiconductor device comprising: a step of loading the substrate holder into the processing chamber; a step of processing the substrate in the processing chamber; and a step of unloading the substrate holder from the processing chamber after processing the substrate. A manufacturing method comprising:
A gas inlet pipe is connected to the gas port at a distal end thereof, and a base end of the gas inlet pipe is provided upward so as to open on the upper surface of the seal cap. A gas supply pipe is provided on the furnace port side, In the step of processing the substrate, the front end opening of the gas inlet pipe being configured to be provided downward at a position in airtight communication with the base end opening of the gas introduction pipe when the seal cap is connected to the furnace port. the method of manufacturing a semiconductor device to be supplied to the substrate and the reaction gases from the gas hole provided on the substrate holder while rotating the substrate holder. A substrate holder that holds a plurality of substrates, a processing chamber in which the substrate holder is carried in and out, a seal cap that opens and closes the lower side of the processing chamber, and a space between the processing chamber and the seal cap A furnace port portion to be connected, a gas supply mechanism configured to supply gas to the substrate from a gas hole provided in the substrate holder, a rotation mechanism for rotating the substrate holder, and a lower part of the rotation mechanism In a substrate processing apparatus having a gas port for supplying gas to the gas holes, and a controller for controlling the gas supply mechanism and the rotation mechanism, respectively, in a state where a plurality of substrates are held. and carrying the substrate holder in the process chamber, in the step of processing the substrate,
A gas inlet pipe is connected to the gas port at a distal end thereof, and a base end of the gas inlet pipe is provided upward so as to open on the upper surface of the seal cap. A gas supply pipe is provided on the furnace port side, The front end opening of the gas inlet pipe is configured to be provided downward at a position in airtight communication with the base end opening of the gas introduction pipe when the seal cap is connected to the furnace port, and the substrate holder is rotated while the substrate holder is rotated. gas supply method for supplying from the gas hole provided on the substrate holder of the reaction gas to the substrate. A substrate holder that holds a plurality of substrates, a processing chamber in which the substrate holder is carried in and out, a seal cap that opens and closes the lower side of the processing chamber, and a space between the processing chamber and the seal cap a furnace opening portion for connecting a gas supply mechanism configured as to supply the gas holes or Laga scan provided on the substrate holder in the substrate, a rotating mechanism for rotating said substrate holder, said rotating mechanism A gas port for supplying gas to the gas hole, the gas supply mechanism, and the rotation mechanism, respectively, and rotating the substrate holder in the process of processing the substrate. A control unit for controlling the reaction gas to be supplied to the substrate from the gas hole provided in the substrate holder ,
A gas inlet pipe is connected to the gas port at a distal end thereof, and a base end of the gas inlet pipe is provided upward so as to open on the upper surface of the seal cap. A gas supply pipe is provided on the furnace port side, the gas supply pipe The substrate processing apparatus is configured so that the front end opening is provided downward at a position in airtight communication with the base end opening of the gas introduction pipe when the seal cap is connected to the furnace port . In the step of treating the pre-Symbol substrate, in the substrate holder in the substrate processing apparatus according to the reaction gas from the front Kiga scan hole while rotating in claim 3 which is configured as to supply to the substrate.   The substrate processing apparatus according to claim 3, wherein a plurality of the gas holes are provided at positions facing a substrate processing region where the substrate is processed.   The said gas hole is a substrate processing apparatus of Claim 3 provided in the position from which height differs for every support | pillar. Before Symbol rotation mechanism, like has a fixed shaft that is fixed to supply either the gas of the reaction gas or inert gas to the substrate holder, and a rotary shaft that rotates the substrate holder The substrate processing apparatus of Claim 3 comprised by these. Before the gas supplied from Kiga Sport The substrate processing apparatus according to claim 7, which is constructed as supplied prior to Kiga scan holes through the space inside the fixed shaft. The substrate processing apparatus according to claim 3 , wherein the gas introduction pipe is branched into a pipe facing the seal cap and another gas supply pipe, and an open / close valve is provided in each pipe. When the seal cap is connected to the furnace port, an on-off valve in a pipe toward the seal cap is opened, an on-off valve in the other gas supply pipe is closed, the gas supply pipe, the gas introduction pipe, The substrate processing apparatus according to claim 9 , wherein the substrate processing apparatus is configured to communicate with the gas port. The substrate processing apparatus according to claim 10 , wherein the gas supplied from the other gas supply pipe is an inert gas, and the gas supplied from the gas supply pipe is a reactive gas.

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