JP2005015895A - Plasma treatment apparatus and treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus and a plasma treatment method in which, when subjecting the bodies to be treated to surface treatment, electrodes is prevented from being surface-treated, and the contamination in the surfaces of the bodies to be treated is also prevented. <P>SOLUTION: In the plasma treatment apparatus where a pair of electrodes 21 and 22 are included, and the first body 81 to be treated and the second body 82 to be treated located between the electrodes 21 and 22 and opposite to each other are subjected to plasma treatment. The plasma treatment apparatus comprises: a clogging means 40 of clogging an opposed space formed in such a manner that the first body 81 to be treated and the second body 82 to be treated are disposed opposite to each other; and a gas feeding means 73 of feeding a gas for treatment to the confronted space. In the plasma treatment method, the above apparatus is used. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing apparatus for performing plasma processing on an object to be processed, and a plasma processing method using the apparatus.
[0002]
[Prior art]
There is an apparatus in which a first object to be processed and a second object to be processed are arranged between a pair of electrodes, and plasma processing is performed on a plurality of objects to be processed at the same time (for example, Patent Document 1). In addition, the sheet-like object to be processed passes through the pair of electrodes twice in the forward path and the return path, and plasma processing is performed on the object to be processed while supplying a processing gas between the objects to be processed. (For example, Patent Document 2).
[0003]
[Patent Document 1]
JP 2001-279453 A
[Patent Document 2]
Japanese Patent Laid-Open No. 11-221519
[0004]
However, in such an apparatus, since the facing space formed by facing the objects to be processed is open, the processing gas supplied to the facing space diffuses outside the facing space. . With this processing gas, the electrode is subjected to the same plasma processing as that of the object to be processed, which causes a problem that the life of the electrode is shortened.
[0005]
In view of the above problems, an object of the present invention is to provide a plasma processing apparatus and a plasma processing method that prevent a processing gas from diffusing to the outside from an opposing space formed by opposing objects to be processed.
[0006]
[Means for Solving the Problems]
The present invention has been proposed in order to solve the above problems, and the plasma processing apparatus includes a pair of electrodes, a first object to be processed, which is positioned between the electrodes and faces each other, and In a plasma processing apparatus for performing plasma processing on a second object to be processed, closing means for closing an opposing space formed by facing the first object to be processed and the second object to be processed, and the opposing space And a gas supply means for supplying a processing gas.
[0007]
The pair of electrodes used in the plasma processing apparatus of the present invention are provided to face each other.
The distance between these electrodes is appropriately determined according to the type of object to be processed, the purpose of using plasma, etc., but is preferably 1 to 10 mm. If it is less than 1 mm, it is difficult to provide an object to be processed between the electrodes, and if it exceeds 10 mm, it is difficult to generate uniform plasma.
[0008]
The specific resistivity of the electrode is 10 in order to suppress energy loss.³It is preferable that it is below Ωcm. Further, when the specific resistivity of the electrode is 1 Ωcm or less, energy loss can be suppressed and more stable plasma can be generated.
[0009]
Although it does not specifically limit as a shape of these electrodes, For example, plate shape, roller shape, etc. are mentioned. Here, the shape of the electrode can take various shapes depending on the purpose, and the plate-like electrode is preferable in terms of formability and cost, and the roller-like electrode is plasma-treated while carrying the object to be treated. Is preferable in that it can be performed.
Moreover, as what constitutes such an electrode, for example, a conductor such as a conductive rubber such as a metal such as stainless steel, copper, aluminum, titanium, tungsten, or brass, or a powder conductor such as a metal powder blended with rubber. Is mentioned. These conductors may be used alone or in combination of two or more.
[0010]
The first object to be processed and the second object to be processed that are subjected to plasma processing by the plasma processing apparatus of the present invention are provided adjacent to the opposing surfaces of the pair of electrodes.
Further, the first object to be processed and the second object to be processed are provided so as to face and separate from each other. The distance between the first object to be processed and the second object to be processed is appropriately determined according to the type of the object to be processed and the purpose of using plasma, but is preferably 0.1 to 10 mm.
[0011]
Here, for convenience of explanation, the pair of electrodes is divided into a first electrode and a second electrode.
The first object to be processed and the second object to be processed are both positioned between the first electrode and the second electrode, and the first object to be processed and the second object to be processed are opposed to each other. The opposing space (hereinafter referred to as opposing space) formed by the first and second objects to be processed is partitioned from the electrodes. Since the facing space and the electrode are partitioned by the object to be processed, the gas existing in the facing space is difficult to diffuse to the electrode side.
[0012]
The first object to be processed is provided adjacent to the opposing surface of the first electrode, and the first object to be processed and the first electrode are usually provided to face each other.
The 1st to-be-processed object may be contacting the opposing surface of a 1st electrode, and may be provided at intervals. When the first object to be processed is provided with a gap between the first electrode and the first electrode, the distance between the first object to be processed and the first electrode depends on the type of the object to be processed. Although it is determined as appropriate, it is preferably 0.1 to 3 mm.
[0013]
The facing surface of the first electrode is preferably covered with the first object to be processed. A stable plasma process can be performed by covering the opposing surface of the first electrode with the first object to be processed. If the opposing surface of the counter electrode is not covered with the object to be processed and there is a portion where the counter electrodes directly face each other, abnormal discharge may occur from the facing portion.
[0014]
The second object to be processed is provided adjacent to the opposing surface of the second electrode, and the second object to be processed and the second electrode are usually provided to face each other.
The 2nd to-be-processed object may be in contact with the opposing surface of the 2nd electrode, and may be provided at intervals. Moreover, it is preferable that the opposing surface of a 2nd electrode is covered with the 2nd to-be-processed object.
[0015]
The plasma processing apparatus of the present invention applies a voltage to the first electrode and the second electrode to thereby form a space between the first electrode and the second electrode (specifically, the first object to be processed). Plasma is generated in the space between the body and the second object to be processed.
[0016]
Examples of the voltage applied to the first electrode and the second electrode include an alternating voltage and a pulsed voltage.
[0017]
The plasma processing apparatus of the present invention performs plasma processing on both the first object to be processed and the second object to be processed that exist in the space between the first electrode and the second electrode.
Since plasma is generated in the space between the first object to be processed and the second object to be processed, the plasma processing is simultaneously performed on the opposing surfaces of the first object to be processed and the second object to be processed.
[0018]
In addition, an arbitrary treatment can be performed on the object by appropriately selecting a processing gas to be supplied to the facing space. For example, a fluorine-containing compound gas or the like is preferable to make the surface of the object to be treated water-repellent In order to make the surface of the object to be treated hydrophilic, an oxygen element-containing compound gas, a nitrogen element-containing compound gas, a sulfur element-containing compound gas, or the like is preferable. Further, a metal-containing compound gas or the like is preferable in order to impart electrical characteristics and optical characteristics to the surface of the object to be processed.
[0019]
Here, the object to be processed is not particularly limited as long as the processing gas does not easily pass through. For example, glass, a circuit board, plate materials, such as a wafer, various resin films, a sheet | seat, etc. are mentioned.
[0020]
The facing space formed by facing the first object to be processed and the second object to be processed is closed by the closing means. Since the facing space is closed, the facing space is partitioned from the external space and becomes an independent space. By making this opposing space an independent space, it is possible to prevent the processing gas from diffusing to the outside, and to prevent impurities from being mixed by gas or the like from the external space.
[0021]
The closing means is not particularly limited as long as the opposing space is partitioned from the external space, and examples thereof include a frame member attached around the first object and the second object. By attaching the frame material around the first object to be processed and the second object to be processed, the facing space can be partitioned from the external space and closed.
[0022]
Note that the structure of the closing means may be a structure in which a gas supply path or the like is provided therein and processing gas can be supplied as the gas supply means.
[0023]
The plasma processing apparatus of the present invention has a gas supply means for supplying a processing gas to a facing space formed by facing the first object to be processed and the second object to be processed.
Since the opposing space is partitioned from the electrode-side space by the object to be processed and the closing means, the processing gas supplied to the opposing space is unlikely to leak into the space outside the opposing space. Further, since the processing gas is difficult to diffuse from the facing space, the utilization efficiency of the processing gas can be improved.
[0024]
The structure of the gas supply means is not particularly limited, and examples thereof include a structure in which processing gas is supplied from gas supply ports such as slits or small holes provided at substantially constant intervals. Further, the gas supply means may be provided in the closing means, and the closing means may supply the processing gas to the facing space.
Further, the method of supplying the gas by the gas supply means is not particularly limited, and for example, a structure in which the processing gas pressurized by a pressurizing pump or the like is ejected toward the facing space may be used.
Here, the gas supply means preferably supplies the processing gas so as to maintain a uniform concentration at least in a space where plasma is generated. If the processing gas concentration in the space where the plasma is generated becomes non-uniform, it becomes difficult to perform the plasma processing uniformly.
[0025]
One or more processing gases may be supplied by the gas supply means.
In addition, the shape or structure of the gas supply means can be appropriately selected depending on the type of processing gas to be supplied, and when supplying a plurality of types of processing gas, each gas supply means is provided for each processing gas. May be.
[0026]
The number of gas supply means can be appropriately selected according to the type of processing gas to be supplied, and may be one or more. The processing gas supplied by the gas supply means may flow out of the space after being supplied to a space formed by the objects to be processed facing each other.
[0027]
In the case where a plurality of gas supply means are provided in the plasma processing apparatus of the present invention, if at least one structure of the gas supply means is a structure for supplying to a space formed by opposing objects to be processed Good.
[0028]
Moreover, it is preferable that the plasma treatment is performed in a state where the pressure in the facing space closed by the closing means is higher than the pressure outside the facing space.
The distance between the objects to be processed in order to spread the object to be processed from the opposite surface side of the electrode when the pressure in the space formed by the objects to be processed is higher than the pressure outside the space. Can be kept constant.
The state in which the pressure in the facing space is high is, for example, a state in which processing gas is supplied to the closed facing space and the pressure is relatively higher than the external pressure, or a state outside the closed space. For example, the space is decompressed and the pressure in the facing space is relatively high.
[0029]
The plasma processing apparatus of the present invention preferably has a transfer means for transferring the object to be processed while being provided on the opposing surface of the electrode.
By transporting the object to be processed while being provided on the opposing surface of the electrode, the plasma processing apparatus of the present invention can transport the object to be processed while performing plasma processing on the opposing surface of the object to be processed. Although it does not specifically limit as such a conveyance means, A roller type conveyor, a belt type conveyor, a chain type conveyor, etc. are mentioned.
[0030]
The plasma processing method of the present invention is a plasma processing method using the plasma processing apparatus of the present invention, and is disposed adjacent to the opposing surfaces of the first electrode and the second electrode facing each other. In the plasma processing method of performing plasma processing on the first object to be processed and the second object to be processed that are opposed to each other, a space formed by facing the first object to be processed and the second object to be processed The plasma processing is performed on the opposing surfaces of the first object and the second object in a state where the processing gas is supplied to the first object and the second object.
[0031]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below in detail with reference to the drawings.
A schematic perspective view of the plasma processing apparatus of the present invention is shown in FIG.
[0032]
The plasma processing apparatus shown in FIG. 1 includes a housing 1, a hot electrode 21, a ground electrode 22, a power source 61, a frame member 30, and the like.
[0033]
Inside the housing 1 indicated by a one-dot chain line, there are a hot electrode (aluminum, L100 cm × W10 cm × t5 cm) 21 connected to the power source 61 and a grounded electrode (aluminum, L100 cm × W10 cm × t5 cm) 22. Are arranged in parallel to face each other.
Moreover, the housing | casing 1 has airtightness and the inside of a housing | casing is filled with nitrogen gas. The housing 1 is actually larger, but is shown smaller in FIG.
[0034]
Flat glass plates 81 and 82 facing each other are provided on the opposing surfaces of the pair of electrodes 21 and 22.
A glass plate (L100 cm × W100 cm × t0.7 cm) 81 that is a first object to be processed is provided adjacent to the surface of the hot electrode 21 that faces the ground electrode 22. The distance from the glass plate 81 is 0.3 mm.
A glass plate (L100 cm × W100 cm × t0.7 cm) 82 as a second object to be processed is provided on the surface of the ground electrode 22 facing the hot electrode 21, and the surface of the ground electrode 22 facing the glass plate 82. The distance to is 0.3 mm.
Here, a facing space is formed between the glass plate 81 and the glass plate 82. Further, the discharge space 50 is formed in a common space between a space where the pair of electrodes 21 and 22 face each other and a facing space where the glass plates 81 and 82 face each other.
[0035]
The glass plates 81 and 82 are both located between the electrodes 21 and 22. Moreover, since both the glass plates 81 and 82 are larger than the area of the opposing surface of the electrodes 21 and 22, they are covered with the glass plates 81 and 82. By covering the electrodes 21 and 22 with the glass plates 81 and 82, it is possible to prevent abnormal discharge from occurring between the electrodes 21 and 22.
[0036]
A frame member 30 (blocking means) having a square shape in plan view is provided at the peripheral edge of the four circumferences of the glass plates 81 and 82. The frame member 30 includes an upper horizontal frame 31 and a lower horizontal frame 32 provided at both upper and lower ends of the glass plates 81 and 82, and a right side frame 33 and a left vertical frame provided at both left and right ends of the glass plates 81 and 82. 34. As for the frames 31-34 which comprise the frame material 30, adjacent frames are closely_contact | adhered without gap, and it is difficult for gas to pass through the joint of adjacent frames.
[0037]
The frame member 30 is provided around the facing space where the glass plates 81 and 82 face each other, and surrounds the surrounding of the facing space to close the facing space with the glass plate. The opposing space forms an independent space partitioned from the external space by the frame member 30 and exhibits high airtightness.
[0038]
The right side frame 33 and the left side frame 34 are provided so as to be orthogonal to the glass plates 81 and 82, respectively, and face each other with the discharge space 50 interposed therebetween. The right side frame 33 and the left side frame 34 are in close contact with the side surfaces of both the glass plates 81 and 82 and bridge the side portions of the glass plates 81 and 82.
[0039]
The upper horizontal frame 31 and the lower horizontal frame 32 are sandwiched between opposing surfaces of the glass plates 81 and 82 and are in close contact with the glass plates 81 and 82. By providing the upper horizontal frame 31 and the lower horizontal frame 32 between the glass plates 81 and 82, the distance between the glass plates 81 and 82 is kept constant.
[0040]
Each of the frames 31 to 34 is made of an insulating resin such as a fluororesin, and prevents abnormal discharge from occurring when the glass plates 81 and 82 are subjected to plasma treatment.
[0041]
The right side frame 33 is provided with a plurality of gas supply ports 73 for supplying processing gas to the facing space toward the facing space.
A gas supply path 72 through which the processing gas passes is provided inside the right side frame 33. One end of the gas supply path 72 is connected to the gas supply port 73, and the other end of the gas supply path 72 is connected to one end of the gas supply pipe 71. The gas supply path 72 is branched into a plurality from the gas supply pipe 71 toward the gas supply port 73.
[0042]
A gas cylinder 70 filled with processing gas is connected to the other end of the gas supply pipe 71. The processing gas passes from the gas cylinder 70 through the gas supply pipe 71 through the gas supply path 72 and is then supplied from the plurality of gas supply ports 73 toward the opposing space. At this time, the processing gas is supplied with the flow rate adjusted.
Since the gas supply path 72 is branched in the middle and connected to the plurality of gas supply ports 73, the processing gas can be uniformly supplied to the facing space. In addition, the direction in which the gas supply port 73 faces is provided at random, so that the processing gas can be supplied more uniformly to the facing space.
[0043]
The left side frame 34 is provided with a gas discharge port 74 for discharging the processing gas supplied to the facing space. A gas exhaust path 75 through which the processing gas passes is provided inside the left side sill frame 34. A gas discharge port 74 is provided at one end of the gas discharge path 75, and a gas discharge pipe 76 that is open to the outside of the housing 1 is provided at the other end of the gas discharge path 75.
[0044]
The processing gas supplied to the facing space is supplied from the gas supply port 73 of the right side frame 33 to the discharge space 50 and then discharged from the gas discharge port 74 provided in the left side frame 34. The processing gas is discharged from the gas discharge port 74 through the gas discharge path 75 to the outside of the housing 1 through the gas discharge pipe 76.
[0045]
Here, since the facing space closed by the frame member 30 has high airtightness, the processing gas supplied to the facing space can be filled with the processing gas without leaking to the external space. Further, by providing a gas supply port as a gas supply means in the frame member 30 as a closing means, when the processing gas is supplied to the facing space, the supplied processing gas flows out of the facing space. Can be prevented.
[0046]
The pressure in the facing space filled with the processing gas is the pressure in the space in the housing 1 (1 atm: 1.013 × 10⁵Higher than Pa) (1.05 atm: 1.065 × 10⁵Pa). Since the plasma treatment is performed in a state in which the pressure in the facing space is higher than the space outside, it is possible to prevent the gas existing in the space outside the facing space from flowing into the facing space. Further, when the pressure in the facing space is higher than the space outside, the distance between the glass plates 81 and 82 is kept constant by the frame member 30 in order to spread the glass plates 81 and 82 from the facing surface side. It will be easy to keep in.
[0047]
The plasma processing apparatus M includes a pair of roller-shaped conveyors 91 and 91 and conveyors 92 and 92 on the left and right sides of the electrodes 21 and 22. The glass plates 81 and 82 are conveyed by the conveyors 91 and 92 from the left side frame 34 side to the right side frame 33 side through the discharge space 50. At this time, the frame member 30 composed of the frames 31 to 34 is conveyed together with the glass plates 81 and 82.
[0048]
A plasma processing method using the plasma processing apparatus in the first embodiment will be described.
First, a pulse voltage from the power source 61 is applied between the hot electrode 21 and the earth electrode 22 in a state where the processing gas is supplied to the space between the glass plates 81 and 82 facing each other. Plasma is generated in the discharge space 50 by the application of the pulse voltage, and the processing gas supplied to the discharge space 50 is excited by the plasma. Since the housing 1 is filled with nitrogen gas, no plasma is generated between the glass plate and the electrode.
At this time, when the glass plates 81 and 82 conveyed by the conveyor pass between the hot electrode 21 and the ground electrode 22, the opposing surfaces of the glass plates 81 and 82 are continuously formed by the excited processing gas. Plasma treatment.
[0049]
Here, the direction in which the glass plates 81 and 82 are conveyed is the same as the direction in which the processing gas is supplied. As a result, the plasma-untreated region on the glass plates 81 and 82 is located on the windward side of the discharge space 50, thereby preventing the by-product of the processing gas generated by the plasma treatment from adhering to the plasma-untreated region. be able to.
[0050]
Next, FIG. 2 shows a schematic cross-sectional view of a plasma processing apparatus according to the second embodiment. In addition, the same number is attached | subjected to the same component as 1st Embodiment, and description of an overlapping part is abbreviate | omitted.
[0051]
Inside the housing 1, a roller-shaped hot electrode 21 and a ground electrode 22 (a pair of electrodes) are disposed to face each other. The roller-like hot electrode 21 is connected to a power source 61, and the ground electrode 22 is grounded. Each of the pair of electrodes 21 and 22 is made of aluminum. The shape of these electrodes 21 and 22 is a cylindrical shape with a radius of 1 cm, and the length thereof is 90 cm.
[0052]
Ten hot electrodes 21 and 10 ground electrodes 22 are arranged side by side on one side with an interval of 3 cm. In addition, glass plates 81 and 82 that are objects to be processed are provided between the electrodes 21 and 22, and an opposing space is formed in the space between the glass plates 81 and 82.
A flat glass plate (L100 cm × W100 cm × t0.7 cm) 81 which is a first object to be processed is provided in contact with the opposing surface of the hot electrode 21. Further, a flat glass plate (L100 cm × W100 cm × t0.7 cm) 82 as a second object to be processed is provided in contact with the opposing surface of the ground electrode 22.
[0053]
The roller-shaped electrodes 21 and 22 are rotatable, and by rotating the electrodes 21 and 22, only the glass plates 81 and 82 can be conveyed in the direction a.
[0054]
On the left and right ends of each of the glass plates 81 and 82, a plate-like right side frame 33 and left side frame 34 are provided. The right side frame 33 and the left side frame 34 are sandwiched between opposing surfaces of the glass plates 81 and 82 and are in close contact with the glass plates 81 and 82. By providing the right side frame 33 and the left side frame 34 between the glass plates 81, 82, the distance between the glass plates 81, 82 is kept constant.
[0055]
A plate-like upper horizontal frame 31 and lower horizontal frame 32 are provided at both upper and lower ends of the peripheral edge of the glass plates 81 and 82 so as to sandwich the discharge space 50 therebetween. The upper horizontal frame 31 and the lower horizontal frame 32 are provided so as to be orthogonal to the glass plates 81 and 82, respectively, and face each other with the discharge space 50 interposed therebetween. In addition, the upper horizontal frame 31 and the lower horizontal frame 32 are in close contact with the side surfaces of both the glass plates 81 and 82 and bridge the side portions of the glass plates 81 and 82.
[0056]
The upper horizontal frame 31 and the lower horizontal frame 32 are provided with two concave portions 41 and 42 which are fitted in the upper and lower ends of the glass plates 81 and 82, respectively, in parallel with a predetermined interval, and are fitted into the concave portions. The distance between the glass plates 81 and 82 is kept constant.
[0057]
Here, by carrying the glass plates 81 and 82 in a state where plasma is generated, it is possible to simultaneously perform plasma processing on both opposing surfaces of the glass plates 81 and 82. At this time, various plasma processes are performed on the opposing surfaces of the glass plates 81 and 82 in accordance with the processing gas supplied to the space between the glass plates 81 and 82.
[0058]
【Example】
The present invention will be described in more detail with reference to the following examples.
[0059]
(Example 1)
In the first embodiment, SiH is used as a processing gas in the space between the glass plates 81 and 82.₄Gas (flow rate: 200 sccm) and H₂Gas (flow rate: 6000 sccm) was supplied. With the glass plates 81 and 82 being conveyed at 20 cm / min, a pulse voltage of 30 kHz and 10 kV was applied between the electrodes 21 and 22, and plasma treatment was performed on both opposing surfaces of the glass plates 81 and 82.
[0060]
(Example 2)
In the second embodiment, SiH is used as a processing gas in the space between the glass plates 81 and 82.₄Gas (flow rate: 100 sccm), H₂Gas (flow rate: 1000 sccm) and nitrogen gas (flow rate: 10 SLM) were supplied. In a state where the glass plates 81 and 82 were conveyed at 100 m / min, a pulse voltage of 30 kHz and 10 kV was applied between the electrodes 21 and 22, and plasma treatment was performed on both opposing surfaces of the glass plates 81 and 82.
[0061]
Confirmation of plasma treatment
The opposing surfaces of the glass plates 81 and 82 plasma-treated in Example 1 and Example 2 were observed.
A uniform a-Si thin film with a thickness of 50 nm is formed on each facing surface of the glass plate treated with plasma in Example 1, and on each facing surface of the glass plate treated with plasma in Example 2. Uniform SiN with a thickness of 200 nm_xA thin film was formed.
In addition, wrinkles and wrinkles were not confirmed in the thin film formed on the glass plate that was plasma-treated in each example. Moreover, formation of a thin film was not confirmed on the electrode surface used in each Example.
[0062]
【The invention's effect】
The plasma processing apparatus of the present invention includes a pair of electrodes, the plasma processing apparatus performing plasma processing on a first object to be processed and a second object to be processed that are located between the electrodes and that face each other. Since the first object to be processed and the second object to be processed have a closing means for closing the facing space and a gas supply means for supplying a processing gas to the facing space, the object to be processed When the surface treatment is performed, it is possible to prevent the treatment gas from reaching the electrode and performing the surface treatment on the electrode.
[0063]
Further, when the gas supply means is provided in the closing means, it is possible to prevent the supplied processing gas from flowing out of the opposing space when the processing gas is supplied to the opposing space.
[0064]
Further, when the plasma treatment is performed in a state where the pressure in the space between the first object to be processed and the second object to be processed is higher than the pressure outside the space, the object to be processed It becomes easy to keep the distance between each other constant.
[0065]
The plasma processing method of the present invention is a plasma processing method for performing plasma processing on a first object to be processed and a second object to be processed, which are located between a pair of electrodes and face each other. When the surface treatment is performed on the object by performing plasma treatment in a state where the facing space formed by facing the second object to be processed is closed and the processing gas is supplied to the facing space. In addition, it is possible to prevent the electrode from being surface-treated and to prevent contamination of the surface of the object to be processed.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view of a plasma processing apparatus of the present invention according to a first embodiment.
FIG. 2 is a schematic cross-sectional view of a plasma processing apparatus of the present invention according to a second embodiment.
[Explanation of symbols]
M Plasma processing equipment
1 housing
21 and 22 electrodes
30 Frame material
31 Upper horizontal frame
32 Lower horizontal frame
33 Right side frame
34 Left side frame
41, 42 Recess
50 discharge space
61 Power supply
70 Gas cylinder
71 Gas supply pipe
72 Gas supply path
73 Gas supply port
74 Gas outlet
75 Gas outlet
76 Gas exhaust pipe
81, 82 target object
91, 92 conveyor

Claims (5)

Having a pair of electrodes,
In a plasma processing apparatus for performing plasma processing on a first object to be processed and a second object to be processed, which are located between the electrodes and face each other,
A closing means for closing a facing space formed by facing the first object to be processed and the second object to be processed;
Gas supply means for supplying a processing gas to the facing space;
A plasma processing apparatus comprising: The plasma processing apparatus according to claim 1, wherein the closing unit is provided with a gas supply unit. The plasma processing apparatus according to claim 1, wherein the closing means is a frame member attached around the first object to be processed and the second object to be processed. The plasma processing apparatus according to claim 1, wherein the plasma processing is performed in a state in which the pressure in the facing space is higher than the pressure outside the facing space. In a plasma processing method of performing plasma processing on a first object to be processed and a second object to be processed that are positioned between a pair of electrodes and that face each other,
A plasma treatment is performed in a state in which a facing space formed by facing the first workpiece and the second workpiece is closed and a processing gas is supplied to the facing space. Plasma processing method.

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