JP2005015239A - Porcelain composition for low temperature firing, low temperature-fired porcelain, and wiring substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a low temperature-fired porcelain which exhibits a low dielectric constant and low dielectric loss, and to provide a circuit board using the same. <P>SOLUTION: The porcelain composition for low temperature-firing contains, by mass, 70 to 99% glass components comprising 45 to 55% SiO<SB>2</SB>, 31 to 35% Al<SB>2</SB>O<SB>3</SB>, 12 to 15% MgO and 0.1 to 5% B<SB>2</SB>O<SB>3</SB>in an amount of ≥99.5% in total, and 1 to 30% of at least one kind filler component selected from the group of alumina, mullite, forsterite, spinel and garnite. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【００６０】
【表２】

【００６１】
表２の結果から明らかなように、本発明の試料Ｎｏ．２〜７、９〜１９では、開気孔率が０．２％以下、１０〜６０ＧＨｚにおける比誘電率が６．５以下、誘電損失が３０×１０^−４以下、熱膨張係数が５×１０^−６／℃、抗折強度が２５０ＭＰａ、ヤング率が１３０ＧＰａ以上であった。
【００６２】
特に、ガラス成分中のＢ_２Ｏ_３の含有量を２．５質量％以下としたガラス成分を用い、フィラー成分として、Ａｌ_２Ｏ_３を用い、ガラス成分を７０〜９５質量％、Ａｌ_２Ｏ_３量を５〜３０質量％とした試料Ｎｏ．１０〜１４では、１０〜６０ＧＨｚにおける比誘電率が５．８以下、熱膨張係数が４．９×１０^−６／℃以下、抗折強度が２７０ＭＰａ以上、ヤング率が１４０ＧＰａ以上となり、特に、誘電損失を７×１０^−４以下に低減できた。
【００６３】
一方、本発明の範囲外の組成であるＣ、Ｄ、Ｅ、Ｆガラスを用いた場合の試料Ｎｏ．１、１７、１８および１９、並びに、Ａガラスを用いても組成を本発明の範囲外とした試料Ｎｏ．８では、試料が未焼結で評価できなかったもの、あるいは同周波数における比誘電率または誘電損失が高いものがみられた。また、抗折強度やヤング率も低かった。
【００６４】
【発明の効果】
以上詳述したように、本発明の低温焼成磁器組成物及び低温焼成磁器では、ＳｉＯ_２、Ｂ_２Ｏ_３、Ａｌ_２Ｏ_３およびＭｇＯを主成分として含むガラス成分とフィラー成分とを所定の割合で組み合わせることによりコーディエライト結晶相を含有させることができ、これにより、この磁器の開気孔率を１％以下にでき、４０〜４００℃における熱膨張係数を５×１０^−６／℃以下、周波数１０〜６０ＧＨｚにおける比誘電率を６．５以下、誘電損失を３０×１０^−４以下にできる。また、抗折強度を２５０ＭＰａ以上、ヤング率を１２０ＧＰａ以上に高めることができる。
【図面の簡単な説明】
【図１】本発明の多層配線基板の一実施例を説明するための概略断面図である。
【符号の説明】
１ 絶縁基板
２ 蓋体
３ メタライズ配線層
４ 接続端子
４ａ 電極パッド
４ｂ ボール状端子
５ 半導体素子
６ キャビティ
７ 絶縁体
８ 配線導体
９ 電極層
１０ ビアホール導体
Ａ 半導体素子収納用パッケージ
Ｂ 外部電気回路基板[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a low-temperature fired ceramic composition, a low-temperature fired ceramic, and a wiring board, and particularly to a low-temperature fired ceramic having a low dielectric constant, a low dielectric loss, and a high strength, and an electric element storage package using the same as an insulating layer. The present invention relates to a wiring board to be used.
[0002]
[Prior art]
In recent years, mobile devices such as mobile phones and PDAs have been rapidly developed as electronic devices that process high-frequency signals of the GHz level or higher, such as optical communication and high-speed interfaces. Wiring boards used in such electronic devices have a lower relative dielectric constant and dielectric loss in order to suppress attenuation of transmission signals due to dielectric loss, as well as unexpected drop and impact when carried. There is a need for an insulating substrate having sufficient mechanical strength to withstand.
[0003]
In place of the conventionally used insulating substrate made of alumina ceramics, low-temperature fired porcelain formed by mixing a glass component and a filler component capable of lowering the dielectric constant than alumina has been developed. For example, according to Patent Document 1 shown below, glass powder containing SiO, Al ₂ O ₃ , B ₂ O ₃ , ZnO, alkaline earth metal oxide, and the like and forsterite powder as a filler component are mixed The composition is fired to produce a low-temperature fired porcelain, and this porcelain is applied to a wiring board.
[0004]
[Patent Document 1]
JP-A-9-175855 [0005]
[Problems to be solved by the invention]
However, although the conventional low-temperature fired ceramic described in Patent Document 1 described above has been improved with respect to lowering the dielectric constant and increasing the strength of the ceramic, this low-temperature fired ceramic is made of SiO ₂ as described above. Since glass powder containing a large amount of B ₂ O ₃ and ZnO in addition to Al ₂ O ₃ and alkaline earth metal oxide is used, the crystallized from this glass powder is used in the fired porcelain. In addition to the phase, many amorphous phases are contained. For this reason, the low-temperature fired ceramic after firing has a problem that the dielectric loss in the frequency region higher than the frequency described in Patent Document 1 is increased.
[0006]
Accordingly, an object of the present invention is to provide a low-temperature sintered porcelain having a low dielectric loss and a low dielectric loss, and a wiring board using the same.
[0007]
[Means for Solving the Problems]
As a result of repeated investigations on the above problems, the present inventors have found that SiO ₂ is 45 to 55 mass%, Al ₂ O ₃ is 31 to 35 mass%, MgO is 12 to 15 mass%, and B ₂ 70 to 100% by mass of a glass component containing 0.1 to 5% by mass of O ₃ in a total amount of 99.5% by mass or more, and at least one selected from the group consisting of alumina, mullite, forsterite, spinel and garnite By firing the composition containing the filler component in a proportion of 0 to 30% by mass, it becomes possible to precipitate a large amount of cordierite crystal phase in the resulting low-temperature fired porcelain, and increase the mechanical strength while increasing the high-frequency region. It has been found that the relative dielectric constant in can be lowered to 6.5 or less and the dielectric loss to 30 × 10 ⁻⁴ or less, and the present invention has been achieved.
[0008]
That is, the low-temperature fired ceramic composition of the present invention, and a SiO ₂ 45 to 55 wt%, and the _Al 2 _{O 3} 31 to 35% by weight, and 12 to 15 wt% of _MgO, a B 2 _{O 3} 0. 70 to 100% by mass of a glass component containing 1 to 5% by mass in total of 99.5% by mass or more, and 0 to at least one filler component selected from the group of alumina, mullite, forsterite, spinel and garnite. It contains in the ratio of 30 mass%. And the low-temperature baking ceramic of this invention is characterized by baking said low-temperature baking ceramic composition at 850-1050 degreeC.
[0009]
In this case, in the above-mentioned low-temperature fired porcelain, 40-400 ° C. is obtained by containing so many cordierite crystal phases as a crystal phase in the porcelain and making the open porosity of this porcelain 1% or less. The coefficient of thermal expansion in can be 5 × 10 ⁻⁶ / ° C. or lower, the relative dielectric constant at a frequency of 10 to 60 GHz can be 6.5 or lower, and the dielectric loss can be 30 × 10 ⁻⁴ or lower. In the low-temperature fired ceramic, the bending strength can be increased to 250 MPa or more and the Young's modulus can be increased to 120 GPa or more.
[0010]
In the wiring board of the present invention, in the wiring board in which the metallized wiring layer is disposed on the surface and / or inside of the insulating board in which the ceramic insulating layers are laminated in multiple layers, at least one of the ceramic insulating layers is It consists of said low-temperature baking ceramics. By forming the wiring board using the low-dielectric constant, low-dielectric loss and high-strength low-temperature sintered porcelain of the present invention, it is possible to form a wiring board having high transmission characteristics and excellent resistance to mounting and drop impact of products.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
The low-temperature fired ceramic composition of the present invention comprises a glass component and a filler component as basic components. Glass component, and a SiO ₂ 45 to 55 wt% in the glass component, and the _Al 2 _{O 3} 31 to 35% by weight, and 12 to 15 wt% of _MgO, B 2 _{O 3} 0.1-5 It is characterized by containing 99.5% by mass or more in total. The ratio of the glass component in the low-temperature fired ceramic composition is more preferably 99.7% by mass or more.
[0012]
In addition, SiO ₂ is 48 to 52% by mass, Al ₂ O ₃ is 32 to 35% by mass, MgO is 13 to 14% by mass, and B for increasing the precipitation of the cordierite crystal phase from the glass component itself. ₂ O ₃ is preferably 0.2 to 4% by mass.
[0013]
Further, in the glass component constituting the low-temperature fired porcelain of the present invention, in addition to the above SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , MgO, unless the dielectric constant and mechanical strength of the porcelain are deteriorated, Inevitable impurities may be contained, but the content is more preferably 0.5% by mass or less, and particularly preferably 0.3% by mass or less.
[0014]
Further, the softening point of the glass component of the present invention is more preferably 1050 ° C. or less, particularly 600 to 980 ° C., in terms of improving the wettability to the filler component and densifying the porcelain.
[0015]
Here, the components of the glass component of the present invention will be described. The reason why the ratio of SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ and MgO contained in the glass component is limited to the above range is that when SiO ₂ is less than the above range, the precipitation amount of the crystalline phase is Insufficient, it becomes difficult to bring the characteristics of the low-temperature fired porcelain within the desired range, and conversely, if it is more than the above range, the softening temperature of the glass also rises and low-temperature firing at 1050 ° C. or less is difficult. Become.
[0016]
When Al ₂ O ₃ and MgO are less than the above range, the amount of precipitation of the crystal phase becomes insufficient, making it difficult to bring the characteristics of the low-temperature fired ceramic into a desired range. If the amount is too large, the softening temperature of the glass rises, and low-temperature firing at 1050 ° C. or less becomes difficult.
[0017]
If B ₂ O ₃ is less than the above range, the melting temperature of the glass will rise too much, the softening temperature of the glass will rise, and low temperature firing at 1050 ° C. or less will be difficult. On the other hand, when the amount is larger than the above range, the crystallization of the glass is inhibited and the amorphous phase in the porcelain is increased, resulting in an increase in dielectric loss and a decrease in Young's modulus.
[0018]
In the present invention, the glass powder is subjected to a heat treatment of 1050 ° C. or lower, so that at least cordierite is precipitated as a crystalline phase, thereby reducing the thermal expansion coefficient, relative dielectric constant, and dielectric loss of the low-temperature fired ceramic. It is possible to dampen. Further, in the present invention, by precipitating the cordierite crystal phase from the glass component rather than as a powder, there is an effect of improving the sinterability, so that the Young's modulus and bending strength of the low-temperature fired ceramic can be improved. It becomes possible.
[0019]
From the above glass components, low-temperature cordierite (α) and high-temperature cordierite (β) are precipitated as the cordierite crystal phase, but low-temperature cordierite can be reduced from the viewpoint that dielectric loss can be reduced. Light (α) is more preferred.
[0020]
In the present invention, the cordierite crystal phase may precipitate together with the cordierite crystal phase as long as it does not affect the electrical and mechanical properties of the low-temperature fired porcelain, and garnite, spinel, mullite may be precipitated from the glass powder. At least one selected from the group may be deposited as a crystalline phase.
[0021]
On the other hand, an amorphous phase such as a B ₂ O ₃ compound is present in the porcelain. The proportion of such an amorphous phase is 10% by mass or less, particularly 5% by mass in terms of suppressing the dielectric loss of the porcelain. % Or less is more desirable.
[0022]
Further, it is important that the low-temperature fired ceramic composition of the present invention contains at least one selected from the group consisting of alumina, mullite, forsterite, spinel and garnite as a filler component. Of these, alumina is particularly preferred.
[0023]
This is because alumina has good wettability with the glass component of the present invention. Thus, by including a filler component having a relatively low dielectric constant and a high Young's modulus, the dielectric constant of the low-temperature fired ceramic porcelain of the present invention is The rate can be kept low and the mechanical strength can be increased.
[0024]
Further, in the low-temperature fired ceramic composition of the present invention, a glass component is contained in a proportion of 70 to 100% by mass and a filler component is contained in a proportion of 0 to 30% by mass because low dielectric constant, low loss and high Young's modulus are obtained. This is very important. In particular, the glass component is 80 to 95% by mass, more preferably 85 to 90% by mass, and the filler component is more preferably 5 to 20% by mass, and further preferably 10 to 15% by mass.
[0025]
When the glass component is less than 70% by mass or the filler component is more than 30% by volume, the sinterability is lowered and only a porcelain with many voids can be obtained, so that the open porosity is increased and the relative dielectric constant is also increased.
[0026]
The low-temperature fired ceramic according to the present invention has a total composition of, for example, SiO ₂ of 36.7 to 3 when the total amount of each metal element of Si, Al, Mg and B is 100% by mass in terms of oxide. 56.3% by weight, in particular 43.6 to 60.3 wt%, _Al 2 _{O 3} is from 27.8 to 49.8% by weight, in particular, from 29.6 to 54.8 wt%, MgO is 11 to 18. It is desirable that 8% by mass, particularly 11.7 to 16.62% by mass, and B ₂ O ₃ is 0.1 to 5% by mass, particularly 0.09 to ₃ % by mass. By making the composition as described above, the following dielectric characteristics and mechanical characteristics can be obtained.
[0027]
That is, the relative dielectric constant at 10 to 60 GHz is 6.5 or less, particularly 6 or less, further 5.5 or less, and the dielectric loss is 30 × 10 ⁻⁴ or less, particularly 29 × 10 ⁻⁴ or less, further 28 × 10 ^{−. 4} or less. Thus, transmission loss of the high-frequency transmission line or antenna can be reduced.
[0028]
The thermal expansion coefficient at 40 to 400 ° C. can be 5 × 10 ⁻⁶ / ° C. or less, particularly 4.5 × 10 ⁻⁶ / ° C. or less, and further 4.3 × 10 ⁻⁶ / ° C. or less. Thus, since the thermal expansion coefficient of the electric element can be approached, cracks and peeling due to thermal stress due to a temperature cycle due to repeated mounting processes such as soldering and operation stop of the semiconductor element can be prevented.
[0029]
The bending strength can be increased to 250 MPa or more, particularly 280 MPa or more, further 300 MPa or more, and the Young's modulus can be 120 GPa or more, particularly 125 GPa or more, and further 130 GPa or more. Even in this case, cracks due to thermal stress can be suppressed, the metallization strength can be increased, and the mechanical reliability of the wiring board can be increased.
[0030]
In addition, the low-temperature fired porcelain of the present invention increases the dielectric properties and mechanical strength as described above, and further improves the moisture resistance as a wiring board, so that the open porosity formed on the surface and / or inside of the porcelain is increased. Is more preferably 1% or less, particularly 0.5% or less, and even more preferably 0.2% or less.
[0031]
Next, a method for producing the low-temperature fired porcelain of the present invention will be described.
[0032]
First, as a starting material, the glass powder having the composition of the glass component and at least one of the various filler powders to be the filler component are used according to the purpose such as the firing temperature and the thermal expansion coefficient, as described above. Mix in ratio.
[0033]
That is, as the glass powder, and the SiO ₂ 45 to 55 wt%, and the _Al 2 _{O 3} 31 to 35% by weight, and 12 to 15 wt% of _MgO, and the B 2 _{O 3} 0.1 to 5 wt% 70 to 100% by mass of a glass powder containing a total amount of 99.5% by mass or more, and at least one filler powder selected from the group consisting of alumina, mullite, forsterite, spinel and garnite in a proportion of 0 to 30% by mass. To be mixed.
[0034]
In the present invention, the average particle size of the glass powder applied to the porcelain is 0.1 to 5 μm, particularly 1 to 3 μm, because the maximum diameter of voids in the low-temperature fired porcelain is reduced and the sinterability is increased. On the other hand, the average particle size of the filler powder is preferably 0.1 to 5 μm, particularly preferably 1 to 3 μm.
[0035]
The glass powder used in the present invention is a liquid phase for liquid phase sintering of the filler component and cordierite by causing the precipitation of crystals in the firing process by adding and mixing the above-mentioned predetermined amount of filler powder. Can be formed at an appropriate temperature. In addition, since the shrinkage start temperature of the entire molded body can be increased by adding filler powder, matching the conditions for simultaneous firing with the metallized wiring layer depending on the type of metal used can be achieved by adjusting the content of the filler powder. You can also plan.
[0036]
According to the present invention, an organic binder having an appropriate shape is added to the mixture of glass powder and filler powder blended as described above, and then a desired forming means such as a doctor blade, a rolling method, or a die press. After forming into a predetermined shape, etc., firing is performed.
[0037]
In baking, the organic binder component mix | blended for shaping | molding is removed first.
[0038]
The removal of the organic binder is performed in an air atmosphere at around 500 to 750 ° C. or in a nitrogen atmosphere. At this time, the shrinkage start temperature of the molded body is preferably about 700 to 850 ° C., and if the shrinkage start temperature is lower than this, it becomes difficult to remove the organic binder. It is desirable to control the softening point as described above.
[0039]
The low-temperature fired porcelain of the present invention is obtained by firing in a temperature range of 850 ° C. to 1050 ° C., and 900 to 975 ° C. is particularly preferable. The firing atmosphere in this case is appropriately selected depending on the metal species of the metallized wiring layer to be used. The metallized wiring layer is preferably composed mainly of copper or silver, and a non-oxidizing atmosphere is preferably used when copper is used, and an oxidizing atmosphere is preferably used when silver is used. If the firing temperature at this time is lower than 850 ° C., it is difficult to densify, and if it exceeds 1050 ° C., simultaneous firing with a metallized wiring layer such as copper or silver becomes difficult when a wiring board described later is produced.
[0040]
That is, in the present invention, it is possible to reduce pores in the porcelain by using a mixture of glass powder and filler powder having a composition in the above range, and further, there are many specific crystal phases called cordierite in the porcelain. By precipitating, a low-temperature-fired porcelain having a low thermal expansion coefficient, a low dielectric constant, a low dielectric loss and high strength can be obtained.
[0041]
Next, when producing the wiring board of the present invention, a slurry is prepared by adding and mixing an appropriate organic resin and a solvent to the mixed powder composed of the composition, and by a sheet molding method such as the doctor blade method. Form a green sheet.
[0042]
Next, a through hole is formed in the green sheet as desired, and the via hole conductor is formed by filling the through hole with a conductor paste mainly composed of copper or silver. On the other hand, a wiring pattern is formed on the surface of the green sheet by screen printing using a wiring pattern conductor paste containing the same metal as the through hole conductor paste. The thickness is preferably 15 to 30 μm.
[0043]
Next, a plurality of green sheets on which via-hole conductors and wiring patterns are formed are stacked, and a wiring board is manufactured using the firing conditions described above.
[0044]
Next, as an example to which this wiring board is applied, the following BGA type electric element storage package can be cited.
[0045]
FIG. 1 is a schematic cross-sectional view showing an embodiment of a wiring board, in particular, a BGA type electric element housing package and its mounting structure as an application example of the low-temperature fired porcelain of the present invention.
[0046]
This electrical element storage package has a basic structure of a so-called wiring board in which a metallized wiring layer is disposed on the surface or inside of an insulating substrate. A is an electrical element storage package, and B is an external circuit board. Respectively.
[0047]
The electrical element storage package A includes an insulating substrate 1, a lid 2, a metallized wiring layer 3, and a connection terminal 4. The insulating substrate 1 and the lid 2 store an electrical element 5 such as a semiconductor element in an airtight manner. A cavity 6 is formed. In the cavity 6, the electric element 5 is bonded and fixed to the insulating substrate 1 through an adhesive such as glass or resin.
[0048]
Further, a metallized wiring layer 3 is disposed on the surface and inside of the insulating substrate 1, and is disposed so as to be electrically connected to the electric element 5 and the connection terminal 4 formed on the lower surface of the insulating substrate 1. ing. According to the electrical element storage package of FIG. 1, the connection terminal 4 has a ball-shaped terminal 4b made of high-melting-point solder (tin-lead alloy) attached to the connection terminal 4 through a connection pad 4a.
[0049]
When the wiring board of the present invention is applied to a high-frequency wiring board, the metallized wiring layer is any one of a strip line, a microstrip line, a coplanar line, and a dielectric waveguide line. .
[0050]
On the other hand, the external circuit board B is composed of an insulator 7 and a wiring conductor 8, and the insulator 7 is made of an insulating material containing at least an organic resin, specifically, a glass-epoxy composite material or the like. The linear thermal expansion coefficient of 40 to 400 ° C. is 12 to 16 × 10 ⁻⁶ / ° C., and a printed circuit board or the like is generally used. In addition, the wiring conductor 8 formed on the surface of the substrate B is usually Cu, Au, Ag, Al, Ni, Pb in terms of the consistency of the thermal expansion coefficient with the insulator 7 and good electrical conductivity. -It consists of metal conductors, such as Sn.
[0051]
In order to mount the electrical element storage package A on the external circuit board B, the ball-shaped terminals 4b on the lower surface of the insulating substrate 1 of the electrical element storage package A are placed and abutted on the wiring conductor 8 of the external circuit board B. Thereafter, the solder is melted with a brazing material such as a low melting point solder at a temperature of about 250 to 400 ° C., and the wiring conductor and the ball terminal 4b are joined. At this time, it is desirable that a brazing material is previously formed on the surface of the wiring conductor 8 in order to easily connect the ball terminal 4b with the brazing material.
[0052]
According to the present invention, a multilayer wiring board constituted by using a low-temperature fired porcelain having high strength and low dielectric constant is excellent in mechanical characteristics and high in reliability as the multilayer wiring board such as alumina conventionally used. It is useful and has excellent dielectric characteristics, and can suppress signal attenuation due to dielectric loss even when handling high-frequency signals.
[0053]
【Example】
Hereinafter, the low-temperature fired porcelain of the present invention and a wiring board using the same will be described in detail based on examples.
[0054]
First, as glass powder, the glass powder shown in Table 1 (the glass component of the present invention was 99.5% by mass) and the filler powder were prepared and weighed and mixed so as to have the ratio shown in Table 2. The average particle size of the glass powder was 3 μm, and the average particle size of the alumina powder and cordierite powder was 1 μm. Next, after pulverizing this mixture, an organic binder and an organic solvent were added and mixed well to prepare a slurry, and a green sheet having a thickness of 300 μm was prepared by a doctor blade method. After laminating the obtained green sheets, the binder was treated in a nitrogen atmosphere containing water vapor at 700 ° C., followed by firing based on the firing method. The heating rate was 300 ° C./° C.
[0055]
Next, for the low-temperature fired porcelain obtained as described above, (1) First, the open porosity was determined by Archimedes method. (2) The thermal expansion coefficient was determined by taking a thermal expansion curve from room temperature to 400 ° C. using a thermomechanical analyzer. (3) The crystal phase was identified using an X-ray diffraction method. (4) The bending strength was determined by a three-point bending test based on JIS-R1601.
[0056]
(5) Young's modulus was measured based on JIS-R1602. (6) Relative permittivity and dielectric loss at 60 GHz were evaluated by a dielectric resonator method using a network analyzer and a synthesized sweeper. In this case, the dielectric resonator was excited by an NRD guide (non-radiative dielectric line), and the resonance characteristics of the TE ₀₂₁ and TE ₀₃₁ modes were obtained. The shape in this case was 2 to 3 mm in diameter and 1.25 mm in thickness.
[0057]
Furthermore, a green sheet having a thickness of 200 μm was prepared by a doctor blade method using a low-temperature fired ceramic composition that is a mixture of the glass powder and filler powder shown in Table 1, and a through hole was formed in the green sheet. A via-hole conductor was formed by filling the conductor paste with a conductive paste. Next, a wiring pattern was formed on the surface of the green sheet by screen printing using a conductor pattern. The metal component of the conductor paste was mainly composed of copper. Next, six green sheets on which the via-hole conductors and wiring patterns were formed were laminated and pressure-bonded. Next, this laminate was fired under the above-mentioned firing conditions (firing time: 1 hour) to produce a wiring board.
[0058]
Nickel and gold plating is applied to the surface of the 2 mm square metallized wiring layer on the surface of the obtained wiring board, and a copper lead wire is soldered on the plating, and then the copper lead wire is 10 mm perpendicular to the metallized wiring layer. The tensile test was performed at a speed of / sec. The metallized strength was evaluated as F / S, where S is the area of the metallized wiring layer and F is the tensile load. These results are summarized in Table 2.
[0059]
[Table 1]

[0060]
[Table 2]

[0061]
As is apparent from the results in Table 2, the sample No. In 2 to 7 and 9 to 19, the open porosity is 0.2% or less, the relative dielectric constant at 10 to 60 GHz is 6.5 or less, the dielectric loss is 30 × 10 ⁻⁴ or less, and the thermal expansion coefficient is 5 × 10 ^{−. 6} / ° C., bending strength was 250 MPa, and Young's modulus was 130 GPa or more.
[0062]
In particular, a glass component having a content of B ₂ O ₃ in the glass component of 2.5% by mass or less is used, Al ₂ O ₃ is used as the filler component, the glass component is 70 to 95% by mass, Al ₂ O. Sample No. _{3 in} which ₃ amount was 5 to 30% by mass. 10 to 14, the relative dielectric constant at 10 to 60 GHz is 5.8 or less, the thermal expansion coefficient is 4.9 × 10 ⁻⁶ / ° C. or less, the bending strength is 270 MPa or more, and the Young's modulus is 140 GPa or more. Loss could be reduced to 7 × 10 ⁻⁴ or less.
[0063]
On the other hand, sample Nos. In the case of using C, D, E, F glass having a composition outside the scope of the present invention. Nos. 1, 17, 18 and 19, and sample Nos. Whose composition was out of the scope of the present invention even when A glass was used. In No. 8, the sample was unsintered and could not be evaluated, or the sample had a high relative dielectric constant or dielectric loss at the same frequency. Also, the bending strength and Young's modulus were low.
[0064]
【The invention's effect】
As described above in detail, in the low-temperature fired ceramic composition and the low-temperature fired ceramic of the present invention, the glass component containing SiO ₂ , B ₂ O ₃ , Al ₂ O _3, and MgO as main components and the filler component in a predetermined ratio. In combination, the cordierite crystal phase can be contained, whereby the open porosity of this porcelain can be 1% or less, and the thermal expansion coefficient at 40 to 400 ° C. is 5 × 10 ⁻⁶ / ° C. or less. The relative dielectric constant at a frequency of 10 to 60 GHz can be 6.5 or less and the dielectric loss can be 30 × 10 ⁻⁴ or less. Moreover, the bending strength can be increased to 250 MPa or more and the Young's modulus can be increased to 120 GPa or more.
[Brief description of the drawings]
FIG. 1 is a schematic cross-sectional view for explaining one embodiment of a multilayer wiring board of the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Insulation board | substrate 2 Cover body 3 Metallized wiring layer 4 Connection terminal 4a Electrode pad 4b Ball-shaped terminal 5 Semiconductor element 6 Cavity 7 Insulator 8 Wiring conductor 9 Electrode layer 10 Via-hole conductor A Package for semiconductor element storage B External electric circuit board

Claims (8)

99.5 to 55% by mass of SiO ₂ , 31 to 35% by mass of Al ₂ O ₃ , 12 to 15% by mass of MgO, and 0.1 to 5% by mass of B ₂ O ₃ in a total amount of 99.5. 70 to 100% by mass of a glass component containing at least mass%, and at least one filler component selected from the group of alumina, mullite, forsterite, spinel and garnite is contained in a proportion of 0 to 30% by mass. Low temperature fired porcelain composition. The low-temperature fired ceramic composition according to claim 1, wherein the low-temperature fired ceramic composition is fired at 850 to 1050 ° C. The low-temperature fired ceramic according to claim 2, wherein the low-temperature fired ceramic contains cordierite as a crystalline phase and has an open porosity of 1% or less. The low-temperature fired porcelain according to claim 2 or 3, wherein a thermal expansion coefficient at 40 to 400 ° C is 5 × 10 ^-6 / ° C or less. 5. The low-temperature fired ceramic according to claim 2, wherein the relative dielectric constant at 10 to 60 GHz is 6.5 or less and the dielectric loss is 30 × 10 ⁻⁴ or less. The low-temperature fired ceramic according to any one of claims 2 to 5, having a bending strength of 250 MPa or more and a Young's modulus of 120 GPa or more. The wiring board in which the metallized wiring layer is disposed on the surface and / or inside of the insulating substrate in which the ceramic insulating layers are laminated in multiple layers, and at least one of the ceramic insulating layers is any one of claims 2 to 6. A wiring board comprising the described low-temperature fired porcelain. The wiring board according to claim 7, wherein the metallized wiring layer contains copper or silver as a main component.

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