JP2004537846A - 電子スイッチング、ゲーティング及びメモリ用途の、電界によって駆動する中央回転部を有する双安定分子メカニカルデバイス - Google Patents

電子スイッチング、ゲーティング及びメモリ用途の、電界によって駆動する中央回転部を有する双安定分子メカニカルデバイス Download PDF

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JP2004537846A
JP2004537846A JP2002586419A JP2002586419A JP2004537846A JP 2004537846 A JP2004537846 A JP 2004537846A JP 2002586419 A JP2002586419 A JP 2002586419A JP 2002586419 A JP2002586419 A JP 2002586419A JP 2004537846 A JP2004537846 A JP 2004537846A
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molecular
molecule
hydrogen
saturated
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JP2004537846A5 (https=
Inventor
ツァン，シャオ−アン
ウィリアムズ，アール，スタンレイ
ウォルムスレイ，ロバート，ジー
ビンセント，ケント，ディー
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HP Inc
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Hewlett Packard Co
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • G02B26/026—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light based on the rotation of particles under the influence of an external field, e.g. gyricons, twisting ball displays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/17—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169
    • G02F1/174—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169 based on absorption band-shift, e.g. Stark - or Franz-Keldysh effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/041—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using photochromic storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/14—Use of different molecule structures as storage states, e.g. part of molecule being rotated
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Molecular Biology (AREA)
  • Theoretical Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Near-Field Transmission Systems (AREA)
JP2002586419A 2001-04-30 2002-04-30 電子スイッチング、ゲーティング及びメモリ用途の、電界によって駆動する中央回転部を有する双安定分子メカニカルデバイス Withdrawn JP2004537846A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/846,135 US6674932B1 (en) 2000-12-14 2001-04-30 Bistable molecular mechanical devices with a middle rotating segment activated by an electric field for electronic switching, gating, and memory applications
PCT/US2002/013476 WO2002089229A2 (en) 2001-04-30 2002-04-30 Bistable molecular mechanical devices with a middle rotating segment activated by an electric field for electronic switching, gating, and memory applications

Publications (2)

Publication Number Publication Date
JP2004537846A true JP2004537846A (ja) 2004-12-16
JP2004537846A5 JP2004537846A5 (https=) 2005-12-22

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JP2002586419A Withdrawn JP2004537846A (ja) 2001-04-30 2002-04-30 電子スイッチング、ゲーティング及びメモリ用途の、電界によって駆動する中央回転部を有する双安定分子メカニカルデバイス

Country Status (6)

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US (2) US6674932B1 (https=)
EP (1) EP1386362B1 (https=)
JP (1) JP2004537846A (https=)
KR (1) KR20040015204A (https=)
DE (1) DE60217849T2 (https=)
WO (1) WO2002089229A2 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008513543A (ja) * 2004-09-22 2008-05-01 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 化合物、該化合物を利用する分子スイッチ及び電子スイッチング方法
US8134177B2 (en) 2006-06-02 2012-03-13 Kabushiki Kaisha Toshiba Switching element, semiconductor device and method of manufacturing the same
TWI601431B (zh) * 2013-09-04 2017-10-01 日東電工股份有限公司 Portable electronic device, charging system, power circuit substrate, power supply method, human body wearing device, hearing aid, and power circuit integrated circuit substrate
CN110609428A (zh) * 2012-04-20 2019-12-24 唯景公司 制造光学可切换的器件的方法及包含该器件的设备
US11333948B2 (en) 2013-06-18 2022-05-17 View, Inc. Electrochromic devices on non-rectangular shapes

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7714438B2 (en) 2000-12-14 2010-05-11 Hewlett-Packard Development Company, L.P. Bistable molecular mechanical devices with a band gap change activated by an electrical field for electronic switching, gating, and memory applications
US6593666B1 (en) * 2001-06-20 2003-07-15 Ambient Systems, Inc. Energy conversion systems using nanometer scale assemblies and methods for using same
US7175961B2 (en) * 2001-10-24 2007-02-13 Hewlett-Packard Development Company, L.P. Photopatternable molecular circuitry
US7408184B2 (en) * 2002-12-25 2008-08-05 Sony Corporation Functional molecular element and functional molecular device
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US7199498B2 (en) * 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7148579B2 (en) 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
US7782408B2 (en) * 2003-07-07 2010-08-24 Hewlett-Packard Development Company, L.P. 3-D molecular assembly and its applications for molecular display and moletronics
US7785737B2 (en) * 2003-08-07 2010-08-31 The University Of Tulsa Electronic crossbar system for accessing arrays of nanobatteries for mass memory storage and system power
US7403640B2 (en) * 2003-10-27 2008-07-22 Hewlett-Packard Development Company, L.P. System and method for employing an object-oriented motion detector to capture images
KR100617040B1 (ko) * 2004-03-16 2006-08-30 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시소자 및 그 제조방법
US7203789B2 (en) * 2004-05-10 2007-04-10 Hewlett-Packard Development Company, L.P. Architecture and methods for computing with reconfigurable resistor crossbars
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
TWI406890B (zh) * 2004-06-08 2013-09-01 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
US20050287698A1 (en) * 2004-06-28 2005-12-29 Zhiyong Li Use of chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices
US7255892B2 (en) * 2004-06-30 2007-08-14 Hewlett-Packard Development Company, L.P. Molecular layer and method of forming the same
US7297557B2 (en) * 2004-06-30 2007-11-20 Hewlett-Packard Development Company, L.P. Method for chemically bonding Langmuir-Blodgett films to substrates
US7709290B2 (en) * 2004-06-30 2010-05-04 Hewlett-Packard Development Company, L.P. Method of forming a self-assembled molecular layer
JP2008506548A (ja) 2004-07-19 2008-03-06 アンビエント システムズ， インコーポレイテッド ナノスケール静電および電磁モータおよび発電機
US7345302B2 (en) * 2004-09-21 2008-03-18 Hewlett-Packard Development Company, L.P. E-field polarized materials
KR20070084553A (ko) * 2004-10-27 2007-08-24 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 조정가능 에너지 밴드갭을 갖는 반도체 장치
WO2006046178A1 (en) * 2004-10-27 2006-05-04 Koninklijke Philips Electronics N.V. Semiconductor device with tunable energy band gap
US7869570B2 (en) 2004-12-09 2011-01-11 Larry Canada Electromagnetic apparatus and methods employing coulomb force oscillators
US7391090B2 (en) * 2004-12-17 2008-06-24 Hewlett-Packard Development Company, L.P. Systems and methods for electrically coupling wires and conductors
US7521784B2 (en) * 2004-12-17 2009-04-21 Hewlett-Packard Development Company, L.P. System for coupling wire to semiconductor region
US7429864B2 (en) * 2004-12-17 2008-09-30 Hewlett-Packard Development Company, L.P. Systems and methods for rectifying and detecting signals
US7503989B2 (en) * 2004-12-17 2009-03-17 Hewlett-Packard Development Company, L.P. Methods and systems for aligning and coupling devices
WO2007012028A2 (en) * 2005-07-19 2007-01-25 Pinkerton Joseph P Heat activated nanometer-scale pump
KR100967210B1 (ko) * 2005-09-27 2010-07-05 삼성전자주식회사 형상 메모리 소자
US7525833B2 (en) * 2005-10-21 2009-04-28 Hewlett-Packard Development Company, L.P. Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers
US20070090344A1 (en) * 2005-10-24 2007-04-26 Hewlett-Packard Development Company, L.P. Multi-stable molecular device
US7530032B2 (en) * 2005-10-28 2009-05-05 Hewlett-Packard Development Company, L.P. Nanowire crossbar implementations of logic gates using configurable, tunneling resistor junctions
US20070096164A1 (en) * 2005-10-31 2007-05-03 Peters Kevin F Sensing system
US7335526B2 (en) * 2005-10-31 2008-02-26 Hewlett-Packard Development Company, L.P. Sensing system
KR100723412B1 (ko) * 2005-11-10 2007-05-30 삼성전자주식회사 나노튜브를 이용하는 비휘발성 메모리 소자
US20070189058A1 (en) * 2006-02-13 2007-08-16 Zhang-Lin Zhou Molecular system and method for reversibly switching the same between four states
US7580239B2 (en) * 2006-06-29 2009-08-25 Hewlett-Packard Development Company, L.P. Capacitive latched bi-stable molecular switch
WO2008124084A2 (en) * 2007-04-03 2008-10-16 Pinkerton Joseph F Nanoelectromechanical systems and methods for making the same
GB2459251A (en) * 2008-04-01 2009-10-21 Sharp Kk Semiconductor nanowire devices
GB2458907A (en) * 2008-04-01 2009-10-07 Sharp Kk Device interconnects
DE102008018570A1 (de) * 2008-04-12 2009-10-15 Forschungszentrum Karlsruhe Gmbh Verwendung eines Moleküls als Schaltelement
WO2010082930A1 (en) * 2009-01-15 2010-07-22 Hewlett-Packard Development Company, L.P. Memristor having a nanostructure forming an active region
US9281060B1 (en) 2015-06-01 2016-03-08 International Business Machines Corporation Device and method for storing or switching

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333708A (en) * 1979-11-30 1982-06-08 Bell Telephone Laboratories, Incorporated Mechanically multistable liquid crystal cell
US5278684A (en) * 1986-12-11 1994-01-11 Fujitsu Limited Parallel aligned chiral nematic liquid crystal display element
DE59706003D1 (de) * 1996-11-21 2002-02-21 Rolic Ag Zug Bistabile ferroelektrische Flüssigkristallzelle
KR100296613B1 (ko) * 1997-02-06 2001-09-22 포만 제프리 엘 분자,이를포함하는적층매질,상기적층매질에패턴을형성하는방법및상기적층매질에서패턴을검색하는방법
US6090332A (en) * 1997-05-16 2000-07-18 California Institute Of Technology Process of changing the refractive index of a composite containing a polymer and a compound having large dipole moment and polarizability and applications thereof
JP3132483B2 (ja) * 1998-09-17 2001-02-05 日本電気株式会社 横電界方式の液晶表示装置
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
JP3481509B2 (ja) * 1999-06-16 2003-12-22 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置
US6559374B2 (en) * 2000-07-21 2003-05-06 North Carolina State University Trans beta substituted chlorins and methods of making and using the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008513543A (ja) * 2004-09-22 2008-05-01 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． 化合物、該化合物を利用する分子スイッチ及び電子スイッチング方法
US8134177B2 (en) 2006-06-02 2012-03-13 Kabushiki Kaisha Toshiba Switching element, semiconductor device and method of manufacturing the same
CN110609428A (zh) * 2012-04-20 2019-12-24 唯景公司 制造光学可切换的器件的方法及包含该器件的设备
US11480841B2 (en) 2012-04-20 2022-10-25 View, Inc. Angled bus bar
CN110609428B (zh) * 2012-04-20 2023-03-10 唯景公司 制造光学可切换的器件的方法及包含该器件的设备
US12405504B2 (en) 2012-04-20 2025-09-02 View Operating Corporation Angled bus bar
US12468205B2 (en) 2012-04-20 2025-11-11 View Operating Corporation Angled bus bar
US12601948B2 (en) 2012-04-20 2026-04-14 View Operating Corporation Angled bus bar
US11333948B2 (en) 2013-06-18 2022-05-17 View, Inc. Electrochromic devices on non-rectangular shapes
TWI601431B (zh) * 2013-09-04 2017-10-01 日東電工股份有限公司 Portable electronic device, charging system, power circuit substrate, power supply method, human body wearing device, hearing aid, and power circuit integrated circuit substrate

Also Published As

Publication number Publication date
US6674932B1 (en) 2004-01-06
DE60217849D1 (de) 2007-03-15
EP1386362A2 (en) 2004-02-04
WO2002089229A3 (en) 2003-11-20
US6920260B2 (en) 2005-07-19
US20040066677A1 (en) 2004-04-08
WO2002089229A2 (en) 2002-11-07
DE60217849T2 (de) 2007-07-12
EP1386362B1 (en) 2007-01-24
KR20040015204A (ko) 2004-02-18

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