KR20040015204A - 전자 스위칭, 게이팅 및 메모리 용도를 위한, 전기장에의해 활성화되는 중간 회전 구획을 갖는 쌍안정성 분자기계 소자 - Google Patents

전자 스위칭, 게이팅 및 메모리 용도를 위한, 전기장에의해 활성화되는 중간 회전 구획을 갖는 쌍안정성 분자기계 소자 Download PDF

Info

Publication number
KR20040015204A
KR20040015204A KR10-2003-7014156A KR20037014156A KR20040015204A KR 20040015204 A KR20040015204 A KR 20040015204A KR 20037014156 A KR20037014156 A KR 20037014156A KR 20040015204 A KR20040015204 A KR 20040015204A
Authority
KR
South Korea
Prior art keywords
group
molecular
molecule
hydrocarbons
rotor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR10-2003-7014156A
Other languages
English (en)
Korean (ko)
Inventor
장샤오-안
윌리엄스알스탠리
웜슬리로버트지
빈센트켄트디
Original Assignee
휴렛-팩커드 컴퍼니(델라웨어주법인)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 휴렛-팩커드 컴퍼니(델라웨어주법인) filed Critical 휴렛-팩커드 컴퍼니(델라웨어주법인)
Publication of KR20040015204A publication Critical patent/KR20040015204A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/02—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light
    • G02B26/026—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the intensity of light based on the rotation of particles under the influence of an external field, e.g. gyricons, twisting ball displays
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/17—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169
    • G02F1/174—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on variable-absorption elements not provided for in groups G02F1/015 - G02F1/169 based on absorption band-shift, e.g. Stark - or Franz-Keldysh effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/041—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using photochromic storage elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/202—Integrated devices comprising a common active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/626—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/14—Use of different molecule structures as storage states, e.g. part of molecule being rotated
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/50—Bistable switching devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nonlinear Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Mathematical Physics (AREA)
  • Molecular Biology (AREA)
  • Theoretical Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Near-Field Transmission Systems (AREA)
KR10-2003-7014156A 2001-04-30 2002-04-30 전자 스위칭, 게이팅 및 메모리 용도를 위한, 전기장에의해 활성화되는 중간 회전 구획을 갖는 쌍안정성 분자기계 소자 Withdrawn KR20040015204A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/846,135 US6674932B1 (en) 2000-12-14 2001-04-30 Bistable molecular mechanical devices with a middle rotating segment activated by an electric field for electronic switching, gating, and memory applications
US09/846,135 2001-04-30
PCT/US2002/013476 WO2002089229A2 (en) 2001-04-30 2002-04-30 Bistable molecular mechanical devices with a middle rotating segment activated by an electric field for electronic switching, gating, and memory applications

Publications (1)

Publication Number Publication Date
KR20040015204A true KR20040015204A (ko) 2004-02-18

Family

ID=25297040

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-7014156A Withdrawn KR20040015204A (ko) 2001-04-30 2002-04-30 전자 스위칭, 게이팅 및 메모리 용도를 위한, 전기장에의해 활성화되는 중간 회전 구획을 갖는 쌍안정성 분자기계 소자

Country Status (6)

Country Link
US (2) US6674932B1 (https=)
EP (1) EP1386362B1 (https=)
JP (1) JP2004537846A (https=)
KR (1) KR20040015204A (https=)
DE (1) DE60217849T2 (https=)
WO (1) WO2002089229A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100967210B1 (ko) * 2005-09-27 2010-07-05 삼성전자주식회사 형상 메모리 소자

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7714438B2 (en) 2000-12-14 2010-05-11 Hewlett-Packard Development Company, L.P. Bistable molecular mechanical devices with a band gap change activated by an electrical field for electronic switching, gating, and memory applications
US6593666B1 (en) * 2001-06-20 2003-07-15 Ambient Systems, Inc. Energy conversion systems using nanometer scale assemblies and methods for using same
US7175961B2 (en) * 2001-10-24 2007-02-13 Hewlett-Packard Development Company, L.P. Photopatternable molecular circuitry
US7408184B2 (en) * 2002-12-25 2008-08-05 Sony Corporation Functional molecular element and functional molecular device
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US7199498B2 (en) * 2003-06-02 2007-04-03 Ambient Systems, Inc. Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same
US20040238907A1 (en) * 2003-06-02 2004-12-02 Pinkerton Joseph F. Nanoelectromechanical transistors and switch systems
US7148579B2 (en) 2003-06-02 2006-12-12 Ambient Systems, Inc. Energy conversion systems utilizing parallel array of automatic switches and generators
US7782408B2 (en) * 2003-07-07 2010-08-24 Hewlett-Packard Development Company, L.P. 3-D molecular assembly and its applications for molecular display and moletronics
US7785737B2 (en) * 2003-08-07 2010-08-31 The University Of Tulsa Electronic crossbar system for accessing arrays of nanobatteries for mass memory storage and system power
US7403640B2 (en) * 2003-10-27 2008-07-22 Hewlett-Packard Development Company, L.P. System and method for employing an object-oriented motion detector to capture images
KR100617040B1 (ko) * 2004-03-16 2006-08-30 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시소자 및 그 제조방법
US7203789B2 (en) * 2004-05-10 2007-04-10 Hewlett-Packard Development Company, L.P. Architecture and methods for computing with reconfigurable resistor crossbars
US8563133B2 (en) 2004-06-08 2013-10-22 Sandisk Corporation Compositions and methods for modulation of nanostructure energy levels
TWI406890B (zh) * 2004-06-08 2013-09-01 Sandisk Corp 奈米結構之沉積後包封：併入該包封體之組成物、裝置及系統
US20050287698A1 (en) * 2004-06-28 2005-12-29 Zhiyong Li Use of chalcogen plasma to form chalcogenide switching materials for nanoscale electronic devices
US7255892B2 (en) * 2004-06-30 2007-08-14 Hewlett-Packard Development Company, L.P. Molecular layer and method of forming the same
US7297557B2 (en) * 2004-06-30 2007-11-20 Hewlett-Packard Development Company, L.P. Method for chemically bonding Langmuir-Blodgett films to substrates
US7709290B2 (en) * 2004-06-30 2010-05-04 Hewlett-Packard Development Company, L.P. Method of forming a self-assembled molecular layer
JP2008506548A (ja) 2004-07-19 2008-03-06 アンビエント システムズ， インコーポレイテッド ナノスケール静電および電磁モータおよび発電機
US7345302B2 (en) * 2004-09-21 2008-03-18 Hewlett-Packard Development Company, L.P. E-field polarized materials
US7378539B2 (en) 2004-09-22 2008-05-27 Hewlett-Packard Development Company, L.P. Compound, a molecular switch employing the compound and a method of electronic switching
KR20070084553A (ko) * 2004-10-27 2007-08-24 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 조정가능 에너지 밴드갭을 갖는 반도체 장치
WO2006046178A1 (en) * 2004-10-27 2006-05-04 Koninklijke Philips Electronics N.V. Semiconductor device with tunable energy band gap
US7869570B2 (en) 2004-12-09 2011-01-11 Larry Canada Electromagnetic apparatus and methods employing coulomb force oscillators
US7391090B2 (en) * 2004-12-17 2008-06-24 Hewlett-Packard Development Company, L.P. Systems and methods for electrically coupling wires and conductors
US7521784B2 (en) * 2004-12-17 2009-04-21 Hewlett-Packard Development Company, L.P. System for coupling wire to semiconductor region
US7429864B2 (en) * 2004-12-17 2008-09-30 Hewlett-Packard Development Company, L.P. Systems and methods for rectifying and detecting signals
US7503989B2 (en) * 2004-12-17 2009-03-17 Hewlett-Packard Development Company, L.P. Methods and systems for aligning and coupling devices
WO2007012028A2 (en) * 2005-07-19 2007-01-25 Pinkerton Joseph P Heat activated nanometer-scale pump
US7525833B2 (en) * 2005-10-21 2009-04-28 Hewlett-Packard Development Company, L.P. Nanoscale shift register and signal demultiplexing using microscale/nanoscale shift registers
US20070090344A1 (en) * 2005-10-24 2007-04-26 Hewlett-Packard Development Company, L.P. Multi-stable molecular device
US7530032B2 (en) * 2005-10-28 2009-05-05 Hewlett-Packard Development Company, L.P. Nanowire crossbar implementations of logic gates using configurable, tunneling resistor junctions
US20070096164A1 (en) * 2005-10-31 2007-05-03 Peters Kevin F Sensing system
US7335526B2 (en) * 2005-10-31 2008-02-26 Hewlett-Packard Development Company, L.P. Sensing system
KR100723412B1 (ko) * 2005-11-10 2007-05-30 삼성전자주식회사 나노튜브를 이용하는 비휘발성 메모리 소자
US20070189058A1 (en) * 2006-02-13 2007-08-16 Zhang-Lin Zhou Molecular system and method for reversibly switching the same between four states
JP4176785B2 (ja) 2006-06-02 2008-11-05 株式会社東芝 スイッチング素子、半導体装置及びそれらの製造方法
US7580239B2 (en) * 2006-06-29 2009-08-25 Hewlett-Packard Development Company, L.P. Capacitive latched bi-stable molecular switch
WO2008124084A2 (en) * 2007-04-03 2008-10-16 Pinkerton Joseph F Nanoelectromechanical systems and methods for making the same
GB2459251A (en) * 2008-04-01 2009-10-21 Sharp Kk Semiconductor nanowire devices
GB2458907A (en) * 2008-04-01 2009-10-07 Sharp Kk Device interconnects
DE102008018570A1 (de) * 2008-04-12 2009-10-15 Forschungszentrum Karlsruhe Gmbh Verwendung eines Moleküls als Schaltelement
WO2010082930A1 (en) * 2009-01-15 2010-07-22 Hewlett-Packard Development Company, L.P. Memristor having a nanostructure forming an active region
US10429712B2 (en) 2012-04-20 2019-10-01 View, Inc. Angled bus bar
EP3011387A4 (en) 2013-06-18 2016-11-30 View Inc ELECTROCHROMIC DEVICES WITH NON-RECTANGULAR SHAPES
JP6381947B2 (ja) * 2013-09-04 2018-08-29 日東電工株式会社 携帯機器、充電システム、及び、電源回路基板等
US9281060B1 (en) 2015-06-01 2016-03-08 International Business Machines Corporation Device and method for storing or switching

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4333708A (en) * 1979-11-30 1982-06-08 Bell Telephone Laboratories, Incorporated Mechanically multistable liquid crystal cell
US5278684A (en) * 1986-12-11 1994-01-11 Fujitsu Limited Parallel aligned chiral nematic liquid crystal display element
DE59706003D1 (de) * 1996-11-21 2002-02-21 Rolic Ag Zug Bistabile ferroelektrische Flüssigkristallzelle
KR100296613B1 (ko) * 1997-02-06 2001-09-22 포만 제프리 엘 분자,이를포함하는적층매질,상기적층매질에패턴을형성하는방법및상기적층매질에서패턴을검색하는방법
US6090332A (en) * 1997-05-16 2000-07-18 California Institute Of Technology Process of changing the refractive index of a composite containing a polymer and a compound having large dipole moment and polarizability and applications thereof
JP3132483B2 (ja) * 1998-09-17 2001-02-05 日本電気株式会社 横電界方式の液晶表示装置
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
JP3481509B2 (ja) * 1999-06-16 2003-12-22 Ｎｅｃ液晶テクノロジー株式会社 液晶表示装置
US6559374B2 (en) * 2000-07-21 2003-05-06 North Carolina State University Trans beta substituted chlorins and methods of making and using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100967210B1 (ko) * 2005-09-27 2010-07-05 삼성전자주식회사 형상 메모리 소자

Also Published As

Publication number Publication date
US6674932B1 (en) 2004-01-06
DE60217849D1 (de) 2007-03-15
EP1386362A2 (en) 2004-02-04
WO2002089229A3 (en) 2003-11-20
US6920260B2 (en) 2005-07-19
US20040066677A1 (en) 2004-04-08
WO2002089229A2 (en) 2002-11-07
DE60217849T2 (de) 2007-07-12
JP2004537846A (ja) 2004-12-16
EP1386362B1 (en) 2007-01-24

Similar Documents

Publication Publication Date Title
KR20040015204A (ko) 전자 스위칭, 게이팅 및 메모리 용도를 위한, 전기장에의해 활성화되는 중간 회전 구획을 갖는 쌍안정성 분자기계 소자
KR100910276B1 (ko) 전자적 스위칭, 게이팅 및 메모리 용도를 위한, 전기장에의해 활성화되는 밴드 갭 변화를 갖는 쌍안정성 분자기계적 소자
US6846682B2 (en) Chemically synthesized and assembled electronic devices
US6512119B2 (en) Bistable molecular mechanical devices with an appended rotor activated by an electric field for electronic switching, gating and memory applications
US6198655B1 (en) Electrically addressable volatile non-volatile molecular-based switching devices
US6751365B2 (en) E-field-modulated bistable molecular mechanical device
KR20040108760A (ko) 나노 스케일의 플래시 메모리, 나노 스케일의 와이어트랜지스터, 나노 스케일의 와이어 트랜지스터의 제조방법 및 교차형 와이어 장치의 크로스바 어레이
US6663797B2 (en) Stabilization of configurable molecular mechanical devices
JP2001284572A (ja) 電子デバイス
US20070090344A1 (en) Multi-stable molecular device
HK1049228B (en) Electrically addressable volatile and non-volatile molecular-based switching devices

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20031029

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid