JP2004521329A5 - - Google Patents

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Publication number
JP2004521329A5
JP2004521329A5 JP2002554887A JP2002554887A JP2004521329A5 JP 2004521329 A5 JP2004521329 A5 JP 2004521329A5 JP 2002554887 A JP2002554887 A JP 2002554887A JP 2002554887 A JP2002554887 A JP 2002554887A JP 2004521329 A5 JP2004521329 A5 JP 2004521329A5
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JP
Japan
Prior art keywords
wafer
field
cavity
infrared radiation
array
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002554887A
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English (en)
Japanese (ja)
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JP2004521329A (ja
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Publication date
Priority claimed from US09/751,611 external-priority patent/US6627892B2/en
Application filed filed Critical
Publication of JP2004521329A publication Critical patent/JP2004521329A/ja
Publication of JP2004521329A5 publication Critical patent/JP2004521329A5/ja
Pending legal-status Critical Current

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JP2002554887A 2000-12-29 2001-12-20 改良された反射防止要素を実装した赤外線検出器 Pending JP2004521329A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/751,611 US6627892B2 (en) 2000-12-29 2000-12-29 Infrared detector packaged with improved antireflection element
PCT/US2001/050463 WO2002054499A2 (en) 2000-12-29 2001-12-20 Infrared detector packaged with improved antireflection element

Publications (2)

Publication Number Publication Date
JP2004521329A JP2004521329A (ja) 2004-07-15
JP2004521329A5 true JP2004521329A5 (cg-RX-API-DMAC7.html) 2005-12-22

Family

ID=25022765

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002554887A Pending JP2004521329A (ja) 2000-12-29 2001-12-20 改良された反射防止要素を実装した赤外線検出器

Country Status (8)

Country Link
US (2) US6627892B2 (cg-RX-API-DMAC7.html)
EP (1) EP1350274A2 (cg-RX-API-DMAC7.html)
JP (1) JP2004521329A (cg-RX-API-DMAC7.html)
KR (1) KR100853002B1 (cg-RX-API-DMAC7.html)
CN (1) CN1291501C (cg-RX-API-DMAC7.html)
IL (3) IL156694A0 (cg-RX-API-DMAC7.html)
TW (1) TW517396B (cg-RX-API-DMAC7.html)
WO (1) WO2002054499A2 (cg-RX-API-DMAC7.html)

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EP2947698A1 (en) * 2014-05-22 2015-11-25 ams AG Photonic semiconductor device for enhanced propagation of radiation and method of producing such a semiconductor device
US12666732B2 (en) 2014-07-03 2026-06-23 Teledyne Flir, Llc Microbolometer systems and methods
CN104157719A (zh) * 2014-07-08 2014-11-19 浙江大立科技股份有限公司 晶圆级封装红外探测器及其制备方法
DE102016111253A1 (de) 2016-06-20 2017-12-21 Jenoptik Optical Systems Gmbh Vorrichtung mit einem Infrarotdetektor und einem vorgelagerten Schutzfenster
JP2018124279A (ja) * 2017-02-02 2018-08-09 三菱ケミカル株式会社 赤外線センサカバー、赤外線センサモジュール及びカメラ
KR102089866B1 (ko) * 2018-09-19 2020-04-23 한국과학기술원 멤스 소자 및 멤스 디바이스의 제조 방법
IL286223B1 (en) 2019-03-11 2026-06-01 Teledyne Flir Commerical Systems Inc Microbolometer systems and methods
CN112410735B (zh) * 2020-09-29 2022-10-18 天津津航技术物理研究所 一种抗潮解的y2o3基复合薄膜结构及制备方法
KR102923734B1 (ko) * 2020-12-04 2026-02-04 삼성전자주식회사 원적외선 검출 소자, 원적외선 검출 소자 어레이 구조, 원적외선 온도 검출 장치 및 열화상 표시 장치
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KR200498510Y1 (ko) * 2021-12-22 2024-11-07 주식회사 한국가스기술공사 적외선 감지기의 점검장치
KR20240050532A (ko) * 2022-10-11 2024-04-19 삼성전자주식회사 열화상 센서 및 이를 포함하는 전자 장치
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