JP2004508946A - デバイスの起伏形状パターニング方法 - Google Patents

デバイスの起伏形状パターニング方法 Download PDF

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Publication number
JP2004508946A
JP2004508946A JP2002511978A JP2002511978A JP2004508946A JP 2004508946 A JP2004508946 A JP 2004508946A JP 2002511978 A JP2002511978 A JP 2002511978A JP 2002511978 A JP2002511978 A JP 2002511978A JP 2004508946 A JP2004508946 A JP 2004508946A
Authority
JP
Japan
Prior art keywords
pattern
mems device
mems
etching step
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002511978A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004508946A5 (cg-RX-API-DMAC10.html
Inventor
ボータゴウ、ザイン − エディン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seagate Technology LLC
Original Assignee
Seagate Technology LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seagate Technology LLC filed Critical Seagate Technology LLC
Publication of JP2004508946A publication Critical patent/JP2004508946A/ja
Publication of JP2004508946A5 publication Critical patent/JP2004508946A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00103—Structures having a predefined profile, e.g. sloped or rounded grooves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00388—Etch mask forming
    • B81C1/00404—Mask characterised by its size, orientation or shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00523—Etching material
    • B81C1/00547—Etching processes not provided for in groups B81C1/00531 - B81C1/00539
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00626—Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/48—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed
    • G11B5/4806—Disposition or mounting of heads or head supports relative to record carriers ; arrangements of heads, e.g. for scanning the record carrier to increase the relative speed specially adapted for disk drive assemblies, e.g. assembly prior to operation, hard or flexible disk drives
    • G11B5/4813—Mounting or aligning of arm assemblies, e.g. actuator arm supported by bearings, multiple arm assemblies, arm stacks or multiple heads on single arm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0323—Grooves
    • B81B2203/0346—Grooves not provided for in B81B2203/033 - B81B2203/0338
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0361—Tips, pillars
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0369—Static structures characterized by their profile
    • B81B2203/0376—Static structures characterized by their profile rounded profile
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B81C2201/0133—Wet etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Analytical Chemistry (AREA)
  • Micromachines (AREA)
  • Moving Of Heads (AREA)
  • Supporting Of Heads In Record-Carrier Devices (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002511978A 2000-07-13 2001-07-13 デバイスの起伏形状パターニング方法 Pending JP2004508946A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21826300P 2000-07-13 2000-07-13
PCT/US2001/022037 WO2002006061A1 (en) 2000-07-13 2001-07-13 Method for topographical patterning of a device

Publications (2)

Publication Number Publication Date
JP2004508946A true JP2004508946A (ja) 2004-03-25
JP2004508946A5 JP2004508946A5 (cg-RX-API-DMAC10.html) 2006-12-07

Family

ID=22814411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002511978A Pending JP2004508946A (ja) 2000-07-13 2001-07-13 デバイスの起伏形状パターニング方法

Country Status (6)

Country Link
US (1) US7129179B2 (cg-RX-API-DMAC10.html)
JP (1) JP2004508946A (cg-RX-API-DMAC10.html)
KR (1) KR100532796B1 (cg-RX-API-DMAC10.html)
AU (1) AU2002222920A1 (cg-RX-API-DMAC10.html)
GB (1) GB2381383A (cg-RX-API-DMAC10.html)
WO (1) WO2002006061A1 (cg-RX-API-DMAC10.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6786420B1 (en) 1997-07-15 2004-09-07 Silverbrook Research Pty. Ltd. Data distribution mechanism in the form of ink dots on cards
US6618117B2 (en) 1997-07-12 2003-09-09 Silverbrook Research Pty Ltd Image sensing apparatus including a microcontroller
US6879341B1 (en) 1997-07-15 2005-04-12 Silverbrook Research Pty Ltd Digital camera system containing a VLIW vector processor
US6624848B1 (en) 1997-07-15 2003-09-23 Silverbrook Research Pty Ltd Cascading image modification using multiple digital cameras incorporating image processing
AUPO850597A0 (en) 1997-08-11 1997-09-04 Silverbrook Research Pty Ltd Image processing method and apparatus (art01a)
US6948794B2 (en) 1997-07-15 2005-09-27 Silverbrook Reserach Pty Ltd Printhead re-capping assembly for a print and demand digital camera system
US6985207B2 (en) * 1997-07-15 2006-01-10 Silverbrook Research Pty Ltd Photographic prints having magnetically recordable media
US6690419B1 (en) 1997-07-15 2004-02-10 Silverbrook Research Pty Ltd Utilising eye detection methods for image processing in a digital image camera
US7110024B1 (en) 1997-07-15 2006-09-19 Silverbrook Research Pty Ltd Digital camera system having motion deblurring means
AUPO802797A0 (en) 1997-07-15 1997-08-07 Silverbrook Research Pty Ltd Image processing method and apparatus (ART54)
AUPP702098A0 (en) 1998-11-09 1998-12-03 Silverbrook Research Pty Ltd Image creation method and apparatus (ART73)
AUPQ056099A0 (en) 1999-05-25 1999-06-17 Silverbrook Research Pty Ltd A method and apparatus (pprint01)
US7119511B2 (en) * 2003-04-11 2006-10-10 International Business Machines Corporation Servo system for a two-dimensional micro-electromechanical system (MEMS)-based scanner and method therefor

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4035062A (en) * 1975-12-30 1977-07-12 Nasa Method and apparatus for producing an image from a transparent object
US4894303A (en) * 1983-06-24 1990-01-16 Canyon Materials Research & Engineering High energy beam-sensitive glasses
US5078771A (en) * 1989-02-07 1992-01-07 Canyon Materials, Inc. Method of making high energy beam sensitive glasses
US5285517A (en) * 1983-06-24 1994-02-08 Canyon Materials, Inc. High energy beam sensitive glasses
US4670366A (en) 1983-06-24 1987-06-02 Canyon Materials Research & Engineering High energy beam sensitive glasses
US4567104A (en) * 1983-06-24 1986-01-28 Canyon Materials Research & Engineering High energy beam colored glasses exhibiting insensitivity to actinic radiation
US4719498A (en) * 1984-05-18 1988-01-12 Fujitsu Limited Optoelectronic integrated circuit
DE3429665A1 (de) * 1984-08-11 1986-02-20 Bayer Ag, 5090 Leverkusen Waschbestaendige, antimikrobiell wirksame fasern und faeden und ihre herstellung
US4581814A (en) * 1984-12-13 1986-04-15 At&T Bell Laboratories Process for fabricating dielectrically isolated devices utilizing heating of the polycrystalline support layer to prevent substrate deformation
US5145757A (en) * 1989-06-23 1992-09-08 Schott Glass Technologies, Inc. Method of forming stable images in electron beam writable glass compositions
US5114813A (en) * 1989-06-23 1992-05-19 Schott Glass Technologies, Inc. Method of forming stable images in electron beam writable glass compositions
US5079130A (en) * 1990-05-25 1992-01-07 At&T Bell Laboratories Partially or fully recessed microlens fabrication
US5126006A (en) * 1990-10-30 1992-06-30 International Business Machines Corp. Plural level chip masking
US5213916A (en) * 1990-10-30 1993-05-25 International Business Machines Corporation Method of making a gray level mask
US5192699A (en) * 1990-12-17 1993-03-09 Gte Laboratories Incorporated Method of fabricating field effect transistors
US5242707A (en) * 1990-12-21 1993-09-07 Regents Of The University Of California System and method for producing electro-optic components integrable with silicon-on-sapphire circuits
US5316640A (en) * 1991-06-19 1994-05-31 Matsushita Electric Industrial Co., Ltd. Fabricating method of micro lens
US5285438A (en) * 1991-10-31 1994-02-08 Regents Of The University Of California Motionless parallel readout head for an optical disk recorded with arrayed one-dimensional holograms
US5310623A (en) * 1992-11-27 1994-05-10 Lockheed Missiles & Space Company, Inc. Method for fabricating microlenses
US5521781A (en) * 1992-10-30 1996-05-28 Shin-Etsu Chemical Co., Ltd. Substrate for magnetic recording medium
JP2795126B2 (ja) * 1993-04-16 1998-09-10 株式会社デンソー 曲面加工方法及びその装置
US5538817A (en) * 1994-06-17 1996-07-23 Litel Instruments Gray level imaging masks and methods for encoding same
US5508803A (en) * 1994-12-20 1996-04-16 International Business Machines Corporation Method and apparatus for monitoring lithographic exposure
US5853959A (en) * 1996-08-09 1998-12-29 Seagate Technology, Inc. Method of fabricating a contoured slider surface feature with a single mask
US5804084A (en) * 1996-10-11 1998-09-08 Sandia Corporation Use of chemical mechanical polishing in micromachining
US6107000A (en) * 1996-12-17 2000-08-22 Board Of Regents - University Of California - San Diego Method for producing micro-optic elements with gray scale mask
US6674134B2 (en) * 1998-10-15 2004-01-06 International Business Machines Corporation Structure and method for dual gate oxidation for CMOS technology
US6335224B1 (en) * 2000-05-16 2002-01-01 Sandia Corporation Protection of microelectronic devices during packaging

Also Published As

Publication number Publication date
AU2002222920A1 (en) 2002-01-30
US20020135266A1 (en) 2002-09-26
GB2381383A (en) 2003-04-30
WO2002006061A1 (en) 2002-01-24
KR100532796B1 (ko) 2005-12-02
GB0301024D0 (en) 2003-02-19
US7129179B2 (en) 2006-10-31
KR20030019573A (ko) 2003-03-06

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